CN113257837A - Flexible display substrate, display device and preparation method - Google Patents
Flexible display substrate, display device and preparation method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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Abstract
The application relates to the technical field of display, and particularly discloses a flexible display substrate, a display device and a preparation method, wherein the flexible display substrate comprises a metal layer, a first grid insulation layer and a second grid insulation layer which are sequentially arranged, the metal layer is patterned to form a metal lead, the first grid insulation layer is patterned to form a first grid, the second grid insulation layer is patterned to form a second grid, the metal lead comprises a first part covered by the first grid, a second part covered by the second grid and a third part, and the third part is formed through a transparent electrode. The invention provides a method for forming a metal lead which is not covered by a first grid and a second grid and a metal lead which cannot be shielded in design through a transparent electrode. Meanwhile, the shielding effect of the metal layer on substrate charges is not influenced, and the characteristics of the device are guaranteed.
Description
Technical Field
The present application generally relates to the field of display technologies, and in particular, to a flexible display substrate, a display device and a manufacturing method thereof.
Background
A flexible display device is a display device formed based on a flexible substrate material. The flexible display device has the characteristics of being curled, wide in visual angle, convenient to carry and the like, so that the flexible display device has a wide application prospect in portable electronic equipment.
The existing flexible display device is required to be bent during use, and a polyimide-based polymer material is adopted to gradually replace a glass substrate, so that the existing flexible display device becomes a material of a thin film transistor substrate. However, since a certain amount of charges exist in the polyimide-based substrate material, when a certain voltage is applied to the gate electrode of the driving thin film transistor substrate, the charges in the substrate move in the direction of the electric field. The back channel is formed by the substrate moving charges, so that the difference of actual brightness change is generated when the display picture is changed, thereby forming an afterimage and influencing the display effect.
In order to solve the problem of the influence of the moving charge of the polyimide substrate on the residual image, a conventional method is to add a metal layer with a bottom shielding layer between the substrate and the position right below the channel of the driving thin film transistor substrate, however, the addition of the metal layer may cause the aperture ratio of the pixel to decrease.
Disclosure of Invention
In order to solve the technical problem that the aperture opening ratio of pixels is reduced after a metal layer is added to the residual image problem in the prior art, the application provides a flexible display substrate, a display device and a preparation method.
In order to achieve the purpose of the invention, the following technical scheme is adopted in the application:
according to a first aspect of the embodiments of the present application, there is provided a flexible display substrate, including a metal layer, a first gate insulating layer and a second gate insulating layer, which are sequentially disposed, wherein the metal layer is patterned to form a metal lead, the first gate insulating layer is patterned to form a first gate, the second gate insulating layer is patterned to form a second gate, the metal lead includes a first portion covered by the first gate, a second portion covered by the second gate, and a third portion, and the third portion is formed by a transparent electrode.
According to an embodiment of the application, wherein the first portion and the second portion may intersect.
According to an embodiment of the application, wherein part of the first portion and/or part of the second portion may be formed by the transparent electrode.
According to an embodiment of the present application, the flexible display substrate further includes a buffer layer disposed above the metal layer, an amorphous silicon thin film is disposed on the buffer layer, the amorphous silicon thin film is patterned to form a channel active layer, and the metal lead covered by the channel active layer is formed by the transparent electrode.
According to an embodiment of the present application, wherein the metal wiring between the third portion and the channel active layer is formed by the transparent electrode.
According to an embodiment of the present application, a first buffer layer and a substrate are sequentially disposed below the metal layer.
According to an embodiment of the present application, wherein the transparent electrode is ITO, IZO, IGZO, AZO, ZnO, or MZO.
According to an embodiment of the application, wherein the layer thickness of the transparent electrode is 20nm to 200 nm.
According to an embodiment of the application, the metal on the metal layer is molybdenum, titanium or aluminum, and the layer thickness of the metal is 50nm-300 nm.
According to a second aspect of embodiments of the present application, there is provided a method of manufacturing a flexible display substrate, including:
depositing a metal, which is molybdenum, titanium or aluminum, on the first portion and the second portion, patterning the metal;
and depositing the transparent electrode on the third part, and patterning the transparent electrode.
According to a third aspect of embodiments of the present application, there is provided a method of manufacturing a flexible display substrate, including:
depositing the transparent electrode on the third part, and patterning the transparent electrode;
depositing a metal, the metal being molybdenum, titanium or aluminum, on the first portion and the second portion, patterning the metal.
According to a fourth aspect of embodiments of the present application, there is provided a display device including the above flexible display substrate.
According to the technical scheme, the flexible display substrate, the display device and the preparation method have the advantages and positive effects that: the metal lead which is not covered by the first grid electrode and the second grid electrode and the metal lead which cannot be shielded in design are formed through the transparent electrode, and the light-transmitting area can be increased due to the arrangement of the transparent electrode, so that the aperture opening ratio of the pixel is increased. Meanwhile, the shielding effect of the metal layer on substrate charges is not influenced, and the characteristics of the device are guaranteed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
Fig. 1 is a schematic view illustrating an overall structure of a flexible display substrate according to an exemplary embodiment.
Fig. 2 is a schematic structural diagram illustrating a flexible display substrate mainly embodying a first portion, a second portion, and a third portion according to an exemplary embodiment.
Fig. 3 is a flowchart (one) illustrating a method of manufacturing a flexible display substrate according to an exemplary embodiment.
Fig. 4 is a flowchart illustrating a method of manufacturing a flexible display substrate according to an exemplary embodiment (ii).
Wherein the reference numerals are as follows:
1. a metal layer; 2. a first gate insulating layer; 3. a second gate insulating layer; 4. a first gate electrode; 5. a second gate electrode; 6. a first portion; 7. a second portion; 8. a third portion; 9. a channel active layer; 10. a first buffer layer; 11. a substrate; 12. a second buffer layer; 13. a third buffer layer; 14. and a fourth buffer layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It is noted that in the description and claims of the present application and in the above-mentioned drawings, relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein.
Also, the terms "comprises," "comprising," and "having," as well as any variations thereof or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements explicitly listed, but may include other steps or elements not explicitly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Spatially relative terms, such as "above … …," "above … …," "above … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
To maintain the following description of the embodiments of the present disclosure clear and concise, a detailed description of known functions and known components have been omitted from the present disclosure.
The present inventors have found that, based on the observation of a flexible display device, a conventional flexible display device needs to be bent frequently, and thus a polyimide-based polymer material is gradually used as a material for a thin film transistor substrate instead of a glass substrate. However, since a certain amount of charges exist in the polyimide-based substrate material, when a certain voltage is applied to the gate of the driving thin film transistor, the charges in the substrate move along with the direction of the electric field, and the charges moving along the substrate form a back channel, so that when the display screen is changed, the difference of actual brightness changes occurs, thereby forming an afterimage and affecting the display effect.
In order to solve the problem of the influence of the moving charge of the polyimide substrate on the residual image, a metal layer with a bottom shielding is added between the position right below a channel of the driving thin film transistor and the substrate, and the influence of the moving charge of the substrate on the characteristics of the driving thin film transistor is shielded by the metal layer. The metal layer is patterned and connected to a fixed voltage signal, and is typically connected to VDD through a via in the lower Pad region of the flexible display device. In order to perform a shielding function, the patterned metal layer directly under the channel of the driving tft is generally larger than the gate area of the driving tft, i.e., the gate of the driving tft is completely covered, and the patterned metal layer needs to be connected to the lower Pad region through a metal lead of the metal layer from the inside of the pixel to connect to the VDD signal in order to connect to a fixed voltage signal. However, this method has a problem that the aperture ratio of the pixel is reduced due to the opaque light of the patterned metal layer directly under the channel of the driving tft and the metal wire connecting the metal layer for fixing the voltage signal. The reduction in aperture ratio also reduces the light transmittance, and the lower the brightness of the flexible display device under the same backlight conditions. And the high aperture opening ratio can meet the requirement of the flexible display device on brightness, so that the power consumption of the backlight source is reduced to the minimum, and the power consumption of the whole module is reduced.
In order to solve the problem of the decrease of the pixel aperture ratio caused by the metal layer added between the substrate and the position right below the channel of the driving thin film transistor in the prior art, the pattern of the metal layer is usually set to be relatively small, but the shielding effect of the metal layer on the moving charges of the substrate is weakened after the pattern of the metal layer is set to be small. Therefore, the shielding effect on the substrate and the influence on the aperture ratio of the pixel after the metal layer is patterned are contradictory to each other.
Based on the above thought, the present disclosure provides a flexible display substrate, the structure of which is schematically shown in fig. 1-4, and the flexible display substrate includes a metal layer 1, a first gate insulating layer 2 and a second gate insulating layer 3, which are sequentially disposed, the metal layer 1 is patterned to form a metal lead, the first gate insulating layer 2 is patterned to form a first gate 4, the second gate insulating layer 3 is patterned to form a second gate 5, the metal lead includes a first portion 6 covered by the first gate 4, a second portion 7 covered by the second gate 5 and a third portion 8, and the third portion 8 is formed by a transparent electrode.
In actual use, the shapes, positions, and the like of the first gate 4 and the second gate 5 of the flexible display substrate may be different due to different functions, design requirements, and the like of the flexible display substrate. In order to avoid the problem that the aperture ratio of the pixels is reduced after the metal layer 1 is added into the flexible display substrate, the part of the metal lead which is not covered by the first grid 4 and the second grid 5 is formed by a transparent electrode, the light transmission area of the flexible display substrate can be increased by arranging the transparent electrode, and under the condition that the pixel area is not changed, the aperture ratio of the pixels is increased by increasing the light transmission area.
Further, there may be an intersection of the first portion 6 and the second portion 7. Depending on the shape, position, etc. of the first grid 4 and the second grid 5, the first portion 6 and the second portion 7 are located differently, so that the first portion 6 and the second portion 7 may or may not intersect each other during actual production due to different processing requirements.
Alternatively, the metal in the metal layer 1 may be molybdenum, titanium, aluminum, or an alloy. The metal in the metal layer 1 in the embodiment of the present disclosure is molybdenum, which is an opaque metal, hard and tough, and has a high melting point and a high thermal conductivity.
Optionally, the transparent electrode is ITO, IZO, IGZO, AZO, ZnO, or MZO. In the embodiment of the disclosure, the transparent electrode adopts ITO (indium tin oxide) semiconductor transparent conductive film, and the ITO is used as nano indium tin oxide, so that the ITO has good conductivity and transparency, can cut off electron radiation, ultraviolet rays and far infrared rays harmful to human bodies, and reduces harm to the human bodies.
Further, a part of the first portion 6 and/or a part of the second portion 7 may be formed by the transparent electrode. By forming part of the metal leads in the first portion 6 and/or the second portion 7 through the transparent electrodes, the light-transmitting area can be increased, and the aperture ratio of the pixel can be increased.
Since molybdenum is a non-light-transmitting metal, the shielding effect of molybdenum is better than that of a transparent electrode, in order to ensure the shielding effect of the metal layer 1 on the mobile charges of the substrate 11, the portion of the metal lead covered by the first gate 4 and the second gate 5 is still formed by molybdenum, and in order to improve the aperture ratio, a portion of the metal lead can be formed by the transparent electrode. Meanwhile, since the resistivity of the transparent electrode is relatively high, when the metal leads are all formed by the transparent electrode, the signal transmission effect is affected, so that a partial region of the metal leads can be formed by the transparent electrode, and the metal leads cannot be formed by the transparent electrode.
Furthermore, the flexible display substrate further comprises a buffer layer arranged above the metal layer 1, an amorphous silicon thin film is arranged on the buffer layer, the amorphous silicon thin film is patterned to form a channel active layer 9, and the metal lead covered by the channel active layer 9 is formed through the transparent electrode. When the projection of the channel active layer 9 in the direction perpendicular to the thickness direction of the flexible display substrate is located on the third portion 8, since the third portion 8 is formed by the transparent electrode, molybdenum metal and the transparent electrode cover the lower portion of the channel active layer 9, the molybdenum metal and the transparent electrode are metal leads for forming the metal layer 1 through two patterning, and a film layer below the channel active layer 9 forms a step difference, so that the channel of the channel active layer 9 above the metal layer 1 is uneven, and the stability of the flexible display substrate is affected. Therefore, in order to ensure flatness of the channel active layer 9, the metal lead covered by the channel active layer 9 is also formed by a transparent electrode, and light transmittance can be further improved by the provision of the transparent electrode.
Further, the metal wiring between the metal wiring covered by the channel active layer 9 and the third portion 8 is formed by the transparent electrode. The metal lead between the metal lead covered by the channel active layer 9 and the third portion 8 is formed by the transparent electrode, so that the production and processing operations are facilitated, and meanwhile, the light-transmitting area can be increased, and the aperture opening ratio can be increased. The projection of the channel active layer 9 in the direction perpendicular to the thickness direction of the flexible display substrate and the metal lead between the edges of the metal layer 1 are formed through the transparent electrodes, so that the flatness of the periphery of the channel active layer 9 can be ensured, and the influence on the flatness of the channel active layer 9 due to the step difference of a film layer formed on the periphery of the channel active layer 9 is avoided.
Further, a first buffer layer 10 and a substrate 11 are sequentially arranged below the metal layer 1, and the buffer layer includes a second buffer layer 12 arranged above the metal layer 1. The metal layer 1 is arranged between the first buffer layer 10 and the second buffer layer 12, the metal layer 1 can be clamped and fixed through the first buffer layer 10 and the second buffer layer 12, and the position stability of the metal layer 1 can be guaranteed. The metal layer 1 is separated from the substrate 11 by the first buffer layer 10, so that the risk of falling off caused by directly arranging the metal layer 1 on the substrate 11 is avoided. Meanwhile, the metal layer 1 and the channel active layer 9 can be separated by the second buffer layer 12, so that the phenomenon that the distance between the metal layer 1 and the channel of the channel active layer 9 is too close to affect the device characteristics is avoided.
Further, the layer thickness of the transparent electrode is 20nm-200 nm. Optionally, the layer thickness of the transparent electrode is 100 nm. Further, the layer thickness of the molybdenum metal is 50nm-300 nm. Optionally, the layer thickness of the molybdenum metal is 200 nm. The thickness of the transparent electrode and the thickness of the molybdenum metal are set to be thinner, so that the energy consumption of the whole device is reduced, and the cost is also reduced.
The embodiment of the disclosure also provides a display device, which comprises the flexible display substrate. For technical features of the flexible display substrate, reference may be made to the foregoing description, which is not repeated herein. The display device disclosed in the embodiment of the present application includes the flexible display substrate provided in the above embodiment, and therefore, the display device having the flexible display substrate also has all the above technical effects, which are not described in detail herein. Other configurations of the display device will be apparent to those of ordinary skill in the art and will not be described in detail herein.
In the prior art, in order to ensure that the influence on the pixel aperture ratio is reduced after the metal layer 1 is added between the position right below the channel of the driving thin film transistor and the substrate 11, the patterning of the metal layer 1 is generally smaller, but the shielding effect of the metal layer 1 on the moving charges of the substrate 11 is weakened after the patterning of the metal layer 1 is smaller. In the embodiment of the present disclosure, the metal lead portion not covered by the first gate 4 and the second gate 5 is formed by using the transparent electrode, in this case, the patterned area of the metal layer 1 can be appropriately increased, and the shielding effect of the metal layer 1 on the moving charges of the substrate 11 is enhanced by increasing the patterned area of the metal layer 1, so that the image sticking problem of the flexible display device is reduced, and at the same time, the aperture ratio of the pixel is not affected.
The embodiment of the present disclosure further provides a method for manufacturing a flexible display substrate, including:
depositing a metal, said metal being molybdenum, titanium or aluminium, on said first portion 6 and said second portion 7, patterning said metal;
depositing the transparent electrode in the third portion 8, patterning the transparent electrode.
In this way, the third portion 8 located outside the first gate 4 and the second gate 5 is formed by the transparent electrode, so that the light transmission area is increased, the aperture ratio is increased, and the influence of the metal layer 1 on the aperture ratio of the pixel due to the arrangement on the substrate 11 is reduced.
Specifically, the first buffer layer 10 is deposited on the substrate 11, the thickness of the first buffer layer 10 is 100nm, and the first buffer layer 10 is a silicon oxide thin film. A metal layer 1 is arranged on the first buffer layer 10, metal is deposited on the first portion 6 and the second portion 7 of the metal layer 1, the metal is molybdenum, the thickness of the metal layer is 100nm, a transparent electrode is deposited on the third portion 8 of the metal layer 1, the thickness of the transparent electrode can be 40nm-100nm, and the metal layer 1 is patterned to form a metal lead. And then depositing a buffer layer on the metal layer 1, wherein the buffer layer comprises a second buffer layer 12, a third buffer layer 13 and a fourth buffer layer 14 which are sequentially deposited on the metal layer 1, the second buffer layer 12 is a silicon oxide film with the layer thickness of 400nm, the third buffer layer 13 is a silicon nitride film with the layer thickness of 100nm, and the fourth buffer layer 14 is a silicon oxide film with the layer thickness of 300 nm. Then, an amorphous silicon thin film with the thickness of 500nm is deposited, the amorphous silicon is changed into polysilicon through a laser annealing process, and then the polysilicon is subjected to patterning processing to form a channel active layer 9. Depositing a first grid insulation layer 2 with the thickness of 120nm on the polysilicon, wherein the first grid insulation layer 2 is a silicon oxide film, then depositing metal molybdenum with the thickness of 200nm-300nm on the first grid insulation layer 2, and forming a first grid 4 after graphical processing; and depositing a second gate insulating layer 3 with the thickness of 120nm on the first gate 4, wherein the second gate insulating layer 3 is a silicon nitride film, then depositing metal molybdenum with the thickness of 200nm-300nm on the second gate insulating layer 3, and forming a second gate 5 after patterning treatment.
Optionally, a part of the metal leads of the first portion 6 and/or a part of the second portion 7 is formed by a transparent electrode.
Alternatively, the metal wiring between the metal wiring covered by the channel active layer 9 and the third portion 8 is formed by the transparent electrode.
The embodiment of the present disclosure further provides a method for manufacturing a flexible display substrate, including:
depositing the transparent electrode on the third portion 8, patterning the transparent electrode;
depositing a metal, said metal being molybdenum, titanium or aluminium, on said first portion 6 and said second portion 7, patterning said metal.
In this way, the third portion 8 located outside the first gate 4 and the second gate 5 is formed by the transparent electrode, so that the light transmission area is increased, the aperture ratio is increased, and the influence of the metal layer 1 on the aperture ratio of the pixel due to the arrangement on the substrate 11 is reduced. In addition, the sequence of the metal patterning and the transparent electrode patterning does not affect the overall performance of the flexible display substrate, so that a person skilled in the art can select the patterning sequence according to the factors of convenience in processing and the like.
Specifically, the first buffer layer 10 is deposited on the substrate 11, the thickness of the first buffer layer 10 is 100nm, and the first buffer layer 10 is a silicon oxide thin film. The method comprises the steps of arranging a metal layer 1 on a first buffer layer 10, depositing a transparent electrode on a third portion 8 of the metal layer 1, wherein the thickness of the transparent electrode can be 40nm-100nm, depositing metal on a first portion 6 and a second portion 7 of the metal layer 1, wherein the metal is molybdenum, the thickness of the metal is 100nm, and patterning the metal layer 1 to form a metal lead. And then depositing a buffer layer on the metal layer 1, wherein the buffer layer comprises a second buffer layer 12, a third buffer layer 13 and a fourth buffer layer 14 which are sequentially deposited on the metal layer 1, the second buffer layer 12 is a silicon oxide film with the layer thickness of 400nm, the third buffer layer 13 is a silicon nitride film with the layer thickness of 100nm, and the fourth buffer layer 14 is a silicon oxide film with the layer thickness of 300 nm. Then, an amorphous silicon thin film with the thickness of 500nm is deposited, the amorphous silicon is changed into polysilicon through a laser annealing process, and then the polysilicon is subjected to patterning processing to form a channel active layer 9. Depositing a first grid insulation layer 2 with the thickness of 120nm on the polysilicon, wherein the first grid insulation layer 2 is a silicon oxide film, then depositing metal molybdenum with the thickness of 200nm-300nm on the first grid insulation layer 2, and forming a first grid 4 after graphical processing; and depositing a second gate insulating layer 3 with the thickness of 120nm on the first gate 4, wherein the second gate insulating layer 3 is a silicon nitride film, then depositing metal molybdenum with the thickness of 200nm-300nm on the second gate insulating layer 3, and forming a second gate 5 after patterning treatment.
Optionally, a part of the metal leads of the first portion 6 and/or a part of the second portion 7 is formed by a transparent electrode.
Alternatively, the metal wiring between the metal wiring covered by the channel active layer 9 and the third portion 8 is formed by the transparent electrode.
The above description is merely exemplary of the present application and is presented to enable those skilled in the art to understand and practice the present application. Various modifications and changes to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (12)
1. The flexible display substrate is characterized by comprising a metal layer (1), a first grid insulating layer (2) and a second grid insulating layer (3) which are sequentially arranged, wherein a metal lead is formed by patterning the metal layer (1), the first grid insulating layer (2) is formed by patterning the first grid (4), the second grid insulating layer (3) is formed by patterning the second grid (5), the metal lead comprises a first part (6) covered by the first grid (4), a second part (7) covered by the second grid (5) and a third part (8), and the third part (8) is formed by a transparent electrode.
2. A flexible display substrate according to claim 1, wherein the first portion (6) and the second portion (7) may intersect.
3. A flexible display substrate according to claim 1, wherein part of the first portion (6) and/or part of the second portion (7) is/are formable by the transparent electrode.
4. The flexible display substrate according to claim 1, further comprising a buffer layer disposed above the metal layer (1), wherein an amorphous silicon thin film is disposed on the buffer layer, the amorphous silicon thin film is patterned to form a channel active layer (9), and the metal lead covered by the channel active layer (9) is formed by the transparent electrode.
5. A flexible display substrate according to claim 4, wherein the metal leads between the metal leads covered by the channel active layer (9) and the third portion (8) are formed by the transparent electrode.
6. The flexible display substrate according to claim 1, wherein a first buffer layer (10) and a substrate (11) are sequentially disposed under the metal layer (1).
7. The flexible display substrate of claim 1, wherein the transparent electrode is ITO, IZO, IGZO, AZO, ZnO, or MZO.
8. The flexible display substrate of claim 1, wherein the transparent electrode has a layer thickness of 20nm to 200 nm.
9. The flexible display substrate according to claim 1, wherein the metal on the metal layer (1) is molybdenum, titanium or aluminum, and the layer thickness of the metal is 50nm to 300 nm.
10. A method of manufacturing a flexible display substrate according to any one of claims 1 to 9, comprising:
depositing a metal, said metal being molybdenum, titanium or aluminium, on said first portion (6) and said second portion (7), patterning said metal;
-depositing said transparent electrode in said third portion (8), patterning said transparent electrode.
11. A method of manufacturing a flexible display substrate according to any one of claims 1 to 9, comprising:
depositing the transparent electrode on the third portion (8), patterning the transparent electrode;
-depositing a metal, being molybdenum, titanium or aluminium, on said first portion (6) and said second portion (7), said metal being patterned.
12. A display device comprising the flexible display substrate according to any one of claims 1 to 9.
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