CN113246015B - Polishing pad with end point detection window and application thereof - Google Patents

Polishing pad with end point detection window and application thereof Download PDF

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Publication number
CN113246015B
CN113246015B CN202110568446.4A CN202110568446A CN113246015B CN 113246015 B CN113246015 B CN 113246015B CN 202110568446 A CN202110568446 A CN 202110568446A CN 113246015 B CN113246015 B CN 113246015B
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groove
detection window
polishing
polishing pad
window
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CN113246015A (en
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谢毓
王凯
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Wanhua Chemical Group Electronic Materials Co ltd
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Wanhua Chemical Group Electronic Materials Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Abstract

The polishing pad at least comprises a polishing surface and an end point detection window, wherein the polishing surface is at least provided with a first groove and a second groove, the first groove is in a concentric circle or concentric polygon shape taking the center of the polishing pad as the center of a circle, and the second groove is positioned on two sides adjacent to the intersection of the window and the first groove. The polishing pad with the end point detection window can avoid the damage to the surface flatness of a polished wafer in the polishing process, and simultaneously reduce scratches caused by the polishing window.

Description

Polishing pad with end point detection window and application thereof
Technical Field
The invention belongs to the technical field of chemical mechanical polishing, and particularly relates to a chemical mechanical polishing pad with an end point detection window and a special groove form.
Background
Chemical mechanical planarization or Chemical Mechanical Polishing (CMP) refers to a process of polishing a semiconductor wafer on a rotating polishing plane under the action of a specific temperature, pressure and polishing medium, or a polishing effect achieved by rotating the wafer on the polishing plane. During the polishing process to remove defects on the wafer surface, such as rough surfaces, agglomerated materials, crystal lattice damage, scratches, and contaminated layers.
During polishing, the polishing end-point is often detected in-situ using an end-point detection system to determine when the desired degree of planarization has been achieved. The in-situ detection method involves a polishing pad having a transparent endpoint detection window that provides access to allow inspection of the wafer surface by a laser during polishing.
Patent CN101778701B discloses a polishing pad, the polishing surface comprising a plurality of grooves disposed within the polishing layer and having a measurable depth from the polishing surface and a barrier region without grooves; and a transparent window disposed within and surrounded by the barrier region. The invention recognizes that the presence of a barrier region that is substantially free of grooves and surrounds a transparent window will reduce the amount of polishing composition that remains on or in the transparent window.
Patent TWI276503 discloses a polishing pad having a groove on the end-point detection window, the polishing surface having a first groove, the end-point detection window having a second groove extending through the window, and the first groove being deeper than the second groove. The invention recognizes that polishing pads of such a structure can reduce the generation of polishing defects.
However, in the polishing process of the polishing pad with the end point detection window, due to the difference between the physical properties of the detection window and the polishing surface, the flowing property of the polishing medium flowing through the detection window and the polishing surface is likely to change, and the abrasive particles and polishing debris in the polishing medium are likely to be accumulated, so that the surface flatness of the polished wafer is affected, the defects of scratches and the like on the surface of the detection window are also caused, and even the end point detection accuracy is affected. Therefore, how to optimize the fluid state of the polishing medium flowing through the detection window and the polishing surface is of great significance to improve the accuracy of endpoint detection and the quality of the wafer surface.
Disclosure of Invention
An object of the present invention is to provide a chemical mechanical polishing pad with an end-point detection window and a specific groove structure, which ensures that polishing debris can be discharged in time when a polishing solution flows through the end-point detection window during a polishing process using the polishing pad, and prevents the polishing debris from remaining on the surface of the window to affect the surface quality of a polished wafer.
It is another aspect of the present invention to provide for the use of such a high endpoint detection accuracy, low scratch chemical mechanical polishing pad.
A polishing pad having an endpoint detection window, the polishing pad comprising at least:
(1) an end point detection window having an L edge and a W edge;
(2) the polishing layer is provided with at least one first groove and at least one second groove on the surface;
the first grooves are concentric circles or concentric polygonal grooves with the center of the polishing pad as the center, and the at least one first groove is communicated with the second groove adjacent to the L side of the endpoint detection window.
In a specific embodiment, the second trench adjacent to the L side of the end-point detection window is a linear trench having a length equal to the length of the L side; preferably, the first groove has a depth D 1 The depth of the second groove is D 2 And D is 1 <D 2 。
In a specific embodiment, the first trench has a constant trench depth D 1 ，0.5mm≤D 1 Less than or equal to 0.9 mm; the depth of the second groove is 0.9mm<D 2 ≤1.5mm。
In a specific embodiment, the thickness of the polishing layer is selected from 1.7 to 2.5 mm.
In a particular embodiment, the first trench bottom is planar in shape.
In a specific embodiment, the second trench bottom is inverted triangular, the angle of the inverted triangle at the trench bottom is θ, wherein 30 ° ≦ θ ≦ 60 °.
In a specific embodiment, the depth of the second trench is less than the thickness of the end-point detection window.
In a particular embodiment, the end-point detection window is of polygonal configuration, preferably quadrilateral configuration, more preferably parallelogram shape.
In a specific embodiment, the first grooves are uniformly distributed at intervals, and the distance between the grooves is 1.5-3.5 mm; preferably, the first grooves are in the shape of concentric circles uniformly spaced apart.
In another aspect of the invention, the aforementioned polishing pad having an endpoint detection window is used in the chemical mechanical polishing of a magnetic, optical, or semiconductor substrate.
Compared with the prior art, the polishing pad with the end point detection window has the following beneficial effects:
in the polishing pad in the prior art, the polishing performance of the detection window and the polishing layer is different due to slight difference of the composition components of the detection window and the polishing layer, and grooves are not formed in the surface of the window, so that polishing debris and abrasive particles in polishing liquid are easily accumulated above the window, and the wafer is scratched, thereby affecting the surface quality of the polished wafer. If grooves are cut in the surface of the window such as TWI276503B, the polishing liquid flowing in the grooves will scatter the incident light, thereby affecting the accuracy of the detection of the polishing endpoint.
The polishing pad is characterized in that a second groove with a deeper depth and an inverted triangle bottom shape is engraved at the interface of the detection window and the polishing layer, when polishing liquid flows along the groove on the surface of the polishing layer and at the boundary of the window, because the groove has the deeper depth and the inverted triangle groove structure, part of polishing debris with larger grain diameter can be retained in the second groove due to the action of instantaneous settlement of the polishing debris and secondary flow of the polishing liquid at the bottom of the inverted triangle. And because the polishing pad is subjected to the action of centrifugal force in the polishing process, the retained polishing debris can be discharged out of the polishing pad along the radial direction, the probability that the debris enters the upper part of the window is reduced, the scratching condition is reduced, and the surface quality of the wafer is improved.
The above structural designs of the chemical mechanical polishing pad of the invention are mutually matched and coact, so that the whole CMP process ensures that polishing debris is discharged in time when polishing liquid flows through the boundary between the window and the polishing surface and is not accumulated above the window, thereby improving the surface quality of the polished wafer and reducing the generation of defects.
Drawings
FIG. 1 is a schematic top view of a polishing pad of the present invention;
FIG. 2 is a schematic cross-sectional view of the polishing pad of the present invention taken along the line A-A';
FIG. 3 is a schematic, partial perspective view of the polishing pad of the present invention;
FIG. 4 is a schematic secondary flow diagram of a localized area of the inverted triangular channel shape of the present invention;
FIG. 5 is a schematic top view of a polishing pad according to another embodiment of the present invention;
fig. 6 is a wafer profile data image according to an embodiment of the present invention;
fig. 7 is a wafer profile data image of a comparative example of the present invention.
Wherein, 1 is a polishing layer, 2 a first groove, 3 an end point detection window and 4 a second groove.
Detailed Description
The following examples will further illustrate the method provided by the present invention in order to better understand the technical solution of the present invention, but the present invention is not limited to the listed examples, and should also include any other known modifications within the scope of the claims of the present invention.
As shown in fig. 1, the polishing pad with an endpoint detection window of the present invention comprises at least:
(1) a polishing layer 1;
(2) the first grooves 2 are located on the surface of the polishing layer, and the first grooves 2 are concentric circles with the center of the polishing pad as the center, but may also be concentric polygons with the center of the polishing pad as the center, such as concentric squares, concentric pentagons, hexagons, etc., but are not limited thereto;
(3) a transparent end-point detection window 3 having two long sides (L-sides) and two short sides (W-sides);
(4) the second groove 4 is adjacent to the side of the end point detection window L, and preferably, the second groove 4 is a linear groove with a length equal to the side length of the side L.
The polishing layer of the polishing pad of the present invention may be made of any material commonly used in the art, without any limitation, and for example, the material of the polishing layer is at least one selected from a segmented block copolymer and a polyurethane elastomer, and preferably a polyurethane elastomer. In particular, the polishing layer can be prepared by methods known in the art and well known to those skilled in the art. The polishing layer can be, for example, one or more layers of a structure without limitation.
As shown in fig. 3, the end point detection window 3 has a rectangular structure, and may have a diamond shape, a parallelogram shape, or a polygonal shape, preferably a parallelogram shape, but is not limited thereto. In general, the detection window is not recommended to be circular or triangular, and if the detection window is circular or triangular, it is difficult to achieve a high surface quality because the polishing pad is subjected to centrifugal force during polishing, and polishing debris retained in the second grooves is discharged from the polishing pad in the radial direction. In the case of other polygonal shapes, it is preferable to ensure that the two sides in the radial direction are parallel (in this case, the two parallel sides are denoted as L sides), so that the polishing debris entering the second grooves can be rapidly discharged. The detection window has two long sides, denoted as L-sides, and two short sides, denoted as W-sides. When the end point detection window has another shape, a side intersecting the first groove may be denoted as an L side (i.e., a side in the radial direction), and a side not intersecting the first groove may be denoted as a W side. Wherein the length of the L side of the end point detection window 3 is 10-25 mm, preferably 15-20 mm; the length of the W short side is 8-20 mm, preferably 10-15 mm.
The first grooves 2 may be in the shape of concentric circles (as shown in fig. 1), or may be in the shape of concentric polygons, and may be alternatively in the shape of concentric triangles, concentric quadrilaterals (as shown in fig. 5), concentric pentagons, concentric hexagons, or the like, preferably in the shape of concentric circles.
The first grooves 2 are uniformly distributed at intervals, the groove spacing is 1.5-3.5 mm, the groove width is 0.3-0.7 mm, and preferably, the groove spacing of the first grooves is 1.8-3 mm. The depth of the first groove is D 1 ，0.5mm≤D 1 0.9mm or less, preferably 0.6mm or less, D 1 Less than or equal to 0.8 mm. In a specific embodiment, the depth of the first groove is constant, the shape of the bottom of the first groove is not limited, for example, the bottom is planar, and can also be curved, and preferably planar, and the design can form a significant shape difference with the inverted triangular bottom of the second groove, so that the flow state of the polishing solution flowing from the first groove to the second groove is changed more easily, and the sedimentation of polishing debris is facilitated.
As shown in fig. 1, the first trench 2 passing through the position of the end-point detection window intersects the second trench 4 at the L-side of the end-point detection window 3, i.e. the portion of the first trench 2 and the second trench 4 are interconnected without any barrier layer in between, and the portion of the first trench 2 and the middle 3 of the end-point detection window do not have any barrier layer. Preferably, the first trench perpendicularly intersects with the edge of the end point detection window L or the second trench.
As shown in fig. 2, the bottom of the second trench 4 is an inverted triangle. The angle of the inverted triangle is θ, i.e. the angle between the bottom slope of the second trench 4 and the detection window is θ, optionally 30 ° ≦ θ ≦ 60 °, for example the angle of θ includes but is not limited to 30 °, 35 °, 40 °, 45 °, 50 °, 55 °, 60 °, preferably 35 ° ≦ θ ≦ 50 °.
The second groove is intersected with the first groove, and the depth of the groove is D 2 And D is 1 <D 2 . Wherein, 0.9mm<D 2 Less than or equal to 1.5mm, preferably less than or equal to 1mm D 2 Less than or equal to 1.3 mm. The depth of the second groove is preferably smaller than the thickness of the end point detection window, so that the end point detection window forms close surface contact with the polishing layer at the lower part of the L edge and the W edge, and the window is favorably and closely fixed. Preferably, the secondThe width of the groove is 0.2-0.6 mm, preferably 0.4-0.5 mm. The second groove is adjacent to two L sides of the end point detection window, the length of the second groove is less than or equal to the length of the L sides, and preferably, the second groove is a linear groove with the length equal to the length of the L sides.
As shown in FIG. 4, the polishing pad of the present invention engraves deeper second grooves 4 with an inverted triangle bottom shape at the interface where the detection window 3 contacts the polishing layer 1, when the polishing solution flows along the first grooves 2 on the surface of the polishing layer and through the boundary with the window, because of the deeper and inverted triangle groove structure, due to the instantaneous settlement of polishing debris and the secondary flow of the polishing solution at the bottom of the inverted triangle, part of the polishing debris with larger particle size will remain in the second grooves, thereby reducing the probability of entering the window, reducing the scratching of the surface of the window and the surface of the wafer, and improving the quality of the surface of the wafer.
The polishing pad having an endpoint detection window of the present invention is useful for polishing at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, and comprises, for example, the steps of:
a. providing a polishing pad comprising at least:
(1) an endpoint detection window;
the end point detection window is provided with two long edges L and two short edges W.
(2) A polishing layer;
wherein, the surface of the polishing layer is provided with a first groove and a second groove. The first groove is a concentric circle or a concentric polygon with the center of the polishing pad as the center of the circle, and the first groove is intersected with the L edge of the endpoint detection window; the second groove is a linear groove which is close to the L edge of the end point detection window and has the length equal to the side length of the L edge.
b. Contacting the polishing pad with a wafer surface;
c. rotating the polishing pad and the wafer to enable the polishing pad and the wafer to rotate relatively;
d. the polishing solution is filled between the polishing pad and the surface of the wafer, and flows through the grooves, thereby completing the chemical mechanical polishing process.
In addition to the polishing pad with the end-point detection window of the present invention, other polishing processes and polishing solutions can be referred to the prior art, and the present invention is not limited thereto.
The invention is further illustrated, but not limited, by the following more specific examples.
Not specifically described, the polishing pads of the examples and comparative examples of the present invention were prepared by the following methods:
and mixing the prepolymer (Chemtura, LGF 740D) and a curing agent 4, 4' -methylene-di-o-chloroaniline (alatin), and stirring for reaction to obtain a polyurethane block cake. An opening was punched in the cake and a window block obtained by reacting a prepolymer (Chemtura, LGF 740D) with a curing agent 4, 4' -methylene-bis- (3-chloro-2, 6-diethylaniline) (alatin) was bonded into the cake opening using Primer94 glue (3M). The resulting cake was sliced to obtain a polishing layer sheet. And (4) attaching the polishing solution to SUBA IV (DOW) to obtain the polishing pad.
The obtained polishing pad was grooved according to the groove data of the examples and comparative examples to obtain a final surface grooved polishing pad.
The main raw materials used in the examples and comparative examples of the present invention were as follows:
equipment: mirra TM CMP polisher.
The Profile test method comprises the following steps: using an FX200 metrology tool, the surface flatness is determined by measuring the difference in wafer thickness before and after polishing using an 81-point helical scan, divided by the polishing time.
The polishing method comprises the following steps: a Cu target was used in a 1:1 mixture with deionized water using an ILD3225 polishing slurry (DOW) at a projectile pressure of 1.5psi (10.3 kPa). Three minutes of polishing and one minute of diamond conditioner dressing. The platen speed was 93rpm and the wafer holder projectile speed was 87rpm during polishing.
Scratching of the target during polishing was indicated by the number of scratches with a length of more than 50mm on the surface of the target.
Example 1
As shown in FIG. 1 for the polishing pad structure, this embodiment has the following polishing pad groove pattern:
the detection window is rectangular, the length of the L side is 13mm, and the length of the W side is 8 mm;
the thickness of the polishing layer is 1.8 mm;
a first trench: is concentric and has a groove depth D 1 The width of the groove is 0.5mm, the distance between the grooves is 1.5mm, and the width of the groove is 0.5 mm;
a second trench: depth D of groove 2 1.0mm, the angle theta of the inverted triangle at the bottom is 30 degrees, the width of the groove is 0.4mm, and the length of the groove is equal to the side length of the window L.
Example 2
As shown in FIG. 5, the polishing pad structure of this embodiment has the following polishing pad groove pattern:
the window is rectangular, the length of the L side is 18mm, and the length of the W side is 11 mm;
the thickness of the polishing layer is 2 mm;
a first trench: is in the shape of concentric quadrangle, and has a groove depth D 1 The distance between the grooves is 2.5mm, and the width of the groove is 0.4 mm;
a second trench: depth D of groove 2 The angle theta of the inverted triangle at the bottom is 45 degrees, the width of the groove is 0.3mm, and the length of the groove is equal to the side length of the window L.
Example 3
As shown in FIG. 1 for the polishing pad structure, this embodiment has the following polishing pad groove pattern:
the window is rectangular, the side length of the L side is 23mm, and the side length of the W side is 15 mm;
the thickness of the polishing layer is 2.5 mm;
a first trench: is concentric and has a groove depth D 1 The width of the groove is 0.6mm, the distance between the grooves is 3.2 mm;
a second trench: depth D of groove 2 The angle theta of the inverted triangle at the bottom is 60 degrees, the width of the groove is 0.5mm, and the length of the groove is 20mm smaller than the side length of the window L.
Comparative example 1
One polishing pad groove pattern of this comparative example is as follows:
the window is rectangular, the length of the L side is 13mm, and the length of the W side is 8 mm;
the thickness of the polishing layer is 1.8 mm;
a first trench: is composed ofConcentric circular shape, depth of groove D 1 The width of the groove is 0.5mm, the distance between the grooves is 1.5mm, and the width of the groove is 0.5 mm;
a second trench: depth D of groove 2 1.0mm, the bottom is in a plane shape, the width of the groove is 0.4mm, and the length of the groove is equal to the side length of the window L.
Comparative example 2
One polishing pad groove pattern of this comparative example is as follows:
the window is rectangular, the length of the L side is 13mm, and the length of the W side is 8 mm;
the thickness of the polishing layer is 1.8 mm;
a first trench: is concentric and has a groove depth D 1 Equal to 0.5mm, the groove pitch is 1.5mm, and the groove width is 0.5 mm.
Wherein the first groove is carved to the position adjacent to the edge L of the window, and no second groove exists.
Comparative example 3
One polishing pad groove pattern of this comparative example is as follows:
the window is rectangular, the length of the L side is 13mm, and the length of the W side is 8 mm;
the thickness of the polishing layer is 1.8 mm;
a first trench: is concentric and has a groove depth D 1 The groove pitch is 1.5mm and the groove width is 0.5mm, which is 0.5 mm.
Wherein the first groove is carved to a position 10mm away from the L edge of the window, and no second groove exists.
Comparative example 4
One polishing pad groove pattern of this comparative example is as follows:
the window is rectangular, the length of the L side is 13mm, and the length of the W side is 8 mm;
the thickness of the polishing layer is 1.8 mm;
a first trench: is concentric and has a groove depth D 1 The groove pitch is 1.5mm and the groove width is 0.5mm, which is 0.5 mm.
And continuously engraving the grooves on the surface of the window continuously without existence of a second groove.
The polishing pads of the examples and comparative examples were subjected to a polishing test, a surface flatness test, and a scratch test, respectively, using the methods described above.
Table 1 shows scratch test data obtained by the test of examples and comparative examples.
Table 1 removal rate results data table
Example 1 Example 2 Example 3 Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4
Number of scratches 0 0 0 2 4 3 0
FIGS. 6-7 are wafer profile data images of an embodiment and a comparative example of the present invention.
As can be seen from table 1, in the polishing process according to the present invention, in the window and groove type of the embodiment, large particles such as polishing debris existing in the polishing liquid flowing through the window are discharged along with the second groove, so as not to pass over the inspection window and scratch the wafer.
It can be seen from the profile images in fig. 6 to 7 that, in the embodiment, the removal rate is stable in the whole wafer size range except for the inevitable edge effect, and there is no point with large fluctuation of the removal rate. In the comparative examples, in addition to the unavoidable edge effect, the polishing rate had more or less fluctuation over the entire wafer size, with fluctuation being most significant in comparative examples 2 and 3.
In comparative example 1, the bottom of the first trench is in a non-triangular shape, the polishing solution flowing through the bottom of the first trench cannot generate secondary flow, polishing debris and the like cannot be discharged efficiently, the profile curve fluctuates slightly, that is, the curve of the embodiment is smoother and more uniform in value compared with the curve of the comparative example, within the range of the abscissa (wafer diameter) -100 to 100; in comparative example 2, grooves are engraved to the positions close to the windows, polishing debris in the polishing solution flows above the detection windows along with the polishing solution without being buffered and discharged, the profile curve is uneven due to large fluctuation caused by difference of material grinding properties, and scratches are formed on the surface of the wafer; comparative example 3 is similar to comparative example 2 in that polishing debris cannot be discharged and accumulated on the surface of the inspection window, thereby causing instability in removal rate and occurrence of scratches; in comparative example 4, grooves are also engraved on the window, and polishing debris can pass through the grooves quickly with polishing liquid in the grooves, so that scratches are not easily generated, but in an experiment, it is found that an optical signal when a detection beam penetrates through the detection window is influenced, and thus the polishing rate is influenced.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. It will be appreciated by those skilled in the art that modifications or adaptations to the invention may be made in light of the teachings of the present specification. Such modifications or adaptations are intended to be within the scope of the present invention as defined by the claims.

Claims (12)

1. A polishing pad having an endpoint detection window, the polishing pad comprising at least:
an end point detection window having an L edge and a W edge;
the polishing layer is provided with at least one first groove and at least one second groove on the surface;
the end point detection window is fastened in the polishing layer, and the surface of the end point detection window is flush with the surface of the polishing layer;
the first grooves are concentric circles or concentric polygonal grooves with the center of the polishing pad as the center of a circle, and the at least one first groove is communicated with the second groove close to the L side of the endpoint detection window;
the depth of the first groove is D 1 The depth of the second groove is D 2 And D is 1 <D 2 (ii) a The depth of the second groove is smaller than the thickness of the endpoint detection window; the bottom of the second groove is in an inverted triangle shape.
2. The polishing pad having an end-point detection window of claim 1, wherein the second grooves immediately adjacent to the L-side of the end-point detection window are linear grooves having a length equal to the length of the L-side.
3. The polishing pad with end-point detection window of claim 2, wherein the first grooves have a constant groove depth D 1 ，0.5mm≤D 1 Less than or equal to 0.9 mm; the depth of the second groove is 0.9mm<D 2 ≤1.5mm。
4. The polishing pad with an endpoint detection window of any one of claims 1 to 3, wherein the thickness of the polishing layer is selected from 1.7 to 2.5 mm.
5. The polishing pad with an endpoint detection window of any one of claims 1 to 3, wherein the bottom of the first trench has a planar shape.
6. The polishing pad with an endpoint detection window of claim 1, wherein the angle of the inverted triangle at the bottom of the second trench is θ, wherein θ is 30 ° ≦ θ ≦ 60 °.
7. The polishing pad having an endpoint detection window of any one of claims 1 to 3, wherein the endpoint detection window has a polygonal structure.
8. The polishing pad having an endpoint detection window of claim 7, wherein the endpoint detection window is a quadrilateral structure.
9. The polishing pad having an endpoint detection window of claim 8, wherein the endpoint detection window is a parallelogram.
10. The polishing pad with an endpoint detection window of any one of claims 1 to 3, wherein the first grooves are uniformly spaced apart from each other, and the groove pitch is 1.5 to 3.5 mm.
11. The polishing pad having an endpoint detection window of claim 10, wherein the first grooves are in the shape of concentric circles evenly spaced apart.
12. Use of the polishing pad with an endpoint detection window of any one of claims 1-11 in the chemical mechanical polishing of a magnetic, optical or semiconductor substrate.
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