CN113238135A - Power semiconductor device characteristic detection and analysis system - Google Patents
Power semiconductor device characteristic detection and analysis system Download PDFInfo
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- CN113238135A CN113238135A CN202110526145.5A CN202110526145A CN113238135A CN 113238135 A CN113238135 A CN 113238135A CN 202110526145 A CN202110526145 A CN 202110526145A CN 113238135 A CN113238135 A CN 113238135A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
Abstract
The invention discloses a power semiconductor device characteristic detection and analysis system which comprises a data acquisition module, a PLC control module, a multi-gear switching module, a current test module, a voltage test module, a power test module, a pulse test module, a data analysis module and a monitoring module, wherein the data acquisition module is connected with the PLC control module; the data acquisition module inputs the acquired power supply signal to the PLC control module; the PLC control module respectively controls the current test module, the voltage test module, the power test module and the pulse test module through the multi-gear switching module; and the PLC control module respectively controls the data analysis module and the monitoring module. The invention aims to provide a power semiconductor device characteristic detection and analysis system which is high in intelligent degree, accurate in test, reasonable in structure, low in cost, multiple in function and strong in reliability.
Description
Technical Field
The invention relates to the technical field of electronic component testing, in particular to a power semiconductor device characteristic detection and analysis system.
Background
At present, China is the largest market for chip import in the world, and the import amount in 2017 reaches 2000 billion dollars, which exceeds the import of petroleum in China. In 2018, in 4 months, Zhongxing communication is sanctioned by the United states, and normal operation activities of Zhongxing communication cannot be normally carried out at one time; in 5 months 2019, Hua is listed as "entity list" by the United states, Hua once caught in passivity, and two companies are affected by the same electronic raw material that depends on import of the United states company: and (3) a chip. With the friction of trade in China and America, a plurality of companies are successively sanctioned by America, which arouses high importance of China on the development of semiconductor industry, and domestic semiconductors are absolutely imperative to be independently controllable, so that a policy is continuously issued in China to promote the improvement of the lagging situation of the semiconductor industry in China.
Compared with the process complexity of an integrated circuit, the power semiconductor device has relatively fewer process steps and relatively lower requirement on process precision, so that the power semiconductor device is vigorously developed in China. As the power semiconductor industry continues to grow higher, there is also a strong demand in the test equipment market. At present, a plurality of domestic semiconductor manufacturer companies still rely on foreign test equipment in a large quantity, and in the face of an increasingly huge power semiconductor market, the domestic replacement of the test equipment is particularly important in order to be limited by some developed countries like chips, and in order to get rid of import dependence of the test equipment.
The power semiconductor test analysis is an important core test device for designing, manufacturing and packaging the power semiconductor, the solution of the domestic replacement process is beneficial to the rapid development of the domestic power semiconductor industry in China, and the rapid development of the domestic power semiconductor industry can be promoted only by combining the improvement of the production level of the power semiconductor test device with a power semiconductor manufacturer. The development of the power semiconductor industry needs technical talents provided by colleges and universities and scientific research institutions related to electronic science and technology, and stable circuit systems and power devices can be designed through continuous experimental verification to meet the technical requirements of power semiconductor devices.
However, foreign semiconductor power device testing instruments are expensive, the purchase and maintenance periods are long, the testing platform built in China is old and heavy relatively, and the testing precision is not high.
The Chinese patent application numbers are: 201920273272.7, application date is 03 and 05 of 2019, publication date is: 12/2019, 06 days, with patent names: the invention discloses a power cycle test system of a power semiconductor device, which is provided with a control circuit, a voltage-stabilized power supply controlled by the control circuit, a refrigerating device and a tested device driving circuit; the output of the voltage-stabilized power supply is respectively connected with a plurality of detection branches; the detection branch is provided with a current detection resistor connected with a voltage-stabilized power supply, a low-resistance switch device controlled to be switched on and off by a control circuit is connected in series with the detection resistor, a voltage division resistor is connected in parallel with the low-resistance switch device, two ends of the current detection resistor are connected with an analog signal selection circuit, and the output of the analog signal selection circuit is connected with a voltage signal acquisition circuit; the output of the voltage signal acquisition circuit is connected with the control circuit; during testing, the tested device driving circuit is connected with the grid electrode of the tested device, the low-resistance switching device is connected with the tested device in series, and the analog signal selection circuit is also connected between the source electrode and the drain electrode of the tested device.
The patent literature discloses a power cycle test system for a power semiconductor device, but the test of the power cycle test system is not accurate enough, has single function and higher cost, and cannot meet the market demand.
Disclosure of Invention
It is an object of the present invention to provide a power semiconductor device characteristic detection analysis system that overcomes or at least mitigates at least one of the above-mentioned disadvantages of the prior art.
The purpose of the invention is realized by the following technical scheme: a power semiconductor device characteristic detection and analysis system comprises a data acquisition module, a PLC control module, a multi-gear switching module, a current test module, a voltage test module, a power test module, a pulse test module, a data analysis module and a monitoring module;
the data acquisition module is used for acquiring input power signals; the PLC control module is used for controlling and analyzing power supply information and controlling power supply signal output; the multi-gear switching module is used for controlling switching of a test signal in a multi-gear manner; the current testing module is used for testing a current signal; the voltage testing module is used for testing a voltage signal; the power test module is used for testing a power signal; the pulse test module is used for testing a pulse signal; the data analysis module is used for analyzing the information processed by the PLC control module; the monitoring module is used for monitoring and analyzing test data information;
the data acquisition module inputs the acquired power supply signal to the PLC control module; the PLC control module respectively controls the current test module, the voltage test module, the power test module and the pulse test module through the multi-gear switching module; the PLC control module respectively controls the data analysis module and the monitoring module.
Optionally, the PLC control module model is a CPU of Exadata.
Optionally, the current testing module includes a micro-current testing module, a large-current testing module, and a current protection circuit, and the current protection circuit is configured to protect the current testing module for current testing.
Optionally, the voltage testing module includes a medium-low voltage testing module, a high voltage testing module, and a voltage protection circuit, where the voltage protection circuit is used to protect the voltage testing module for voltage testing.
Optionally, the monitoring module includes a correction module, a self-checking module, and a fault warning module, the correction module is configured to correct the test parameter, the self-checking module is configured to perform self-checking on the test parameter, and the fault warning module is configured to perform fault warning.
Optionally, the PLC control module includes a display module, and the display module is configured to display information of the detection and analysis.
The technical scheme provided by the invention has the beneficial effects that 1) the power supply information is acquired by the data acquisition module and input to the PLC control module, and the PLC control module processes and analyzes the power supply information, so that various currents, various voltages, power parameters and pulse signal parameters can be accurately detected and analyzed, and the system is controlled more conveniently; 2) the invention has various functions, ensures the stability and reliability of the test current and voltage parameters, and greatly prolongs the service life of the power semiconductor device characteristic detection and analysis system; 3) the invention has wide application places, lower cost and reasonable structure, and is an upgrading improvement in the prior art.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention will be briefly described below, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a power semiconductor device characteristic detection and analysis system according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following drawings and specific examples.
Example 1
As shown in fig. 1, the present invention discloses a power semiconductor device characteristic detection and analysis system, which comprises: the device comprises a data acquisition module 1, a PLC control module 2, a multi-gear switching module 3, a current test module 4, a voltage test module 5, a power test module 6, a pulse test module 7, a data analysis module 8 and a monitoring module 9;
the data acquisition module 1 is used for acquiring input power signals; the PLC control module 2 is used for controlling and analyzing power supply information and controlling power supply signal output; the multi-gear switching module 3 is used for controlling switching of a test signal in a multi-gear manner; the current test module 4 is used for testing a current signal; the voltage testing module 5 is used for testing a voltage signal; the power test signal 6 is used for testing a power signal; the pulse test module 7 is used for testing pulse signals; the data analysis module 8 is used for analyzing the information processed by the PLC control module; the monitoring module 9 is used for monitoring and analyzing test data information;
the data acquisition module 1 inputs the acquired power supply signal to the PLC control module 2; the PLC control module 2 controls the current test module 4, the voltage test module 5, the power test module 6 and the pulse test module 7 respectively through the multi-gear switching module 3; the PLC control module 2 controls the data analysis module 8 and the monitoring module 9, respectively.
Preferably, the model of the PLC control module 3 is a CPU of Exadata.
In this embodiment, the data acquisition module acquires a power signal and inputs the power signal to the PLC control module 2; the PLC control module 2 controls the current test module 4, the voltage test module 5, the power test module 6 and the pulse test module 7 to test through the multi-gear switching module 3 respectively, and the multi-gear switching module 3 can switch different gears to control the test current test module 4, the voltage test module 5, the power test module 6 and the pulse test module 7 to test various parameters.
In this embodiment, the data analysis module 8 can further analyze and process the PLC control module 2, so that the data analyzed and processed by the PLC control module 2 is more accurate, and the PLC control module 2 controls each test module to test various power parameters more accurately.
The invention controls and tests various power supply parameters through the PLC control module 2, has high test accuracy, is more reliable, has a relatively simple structure and a relatively low cost.
In this embodiment, the current testing module 4 includes a micro current testing module 41 and a high current testing module 42. The micro-current testing module 41 and the large-current testing module 42 are used for testing current parameters, so that the obtained current parameters are more accurate, stable and reliable.
In this embodiment, preferably, the current testing module 4 includes a current protection circuit 43, and the current protection circuit 43 is used for protecting the current testing module 4 to perform a current test.
Of course, the current protection circuit 43 is also used to protect the micro-current test module 41 and the high-current test module 42 for current testing.
In this embodiment, the voltage testing module 5 includes a middle/low voltage testing module 51 and a high voltage testing module 52. The voltage testing is carried out through the middle and low voltage testing module 51 and the high voltage testing module 52, and the obtained voltage parameters are more accurate, stable and reliable.
In this embodiment, preferably, the voltage testing module 5 includes a voltage protection circuit 53, and the voltage protection circuit 53 is used for protecting the voltage testing module to perform a voltage test.
The voltage protection circuit 53 is also used for protecting the middle/low voltage test module 51 and the high voltage test module 52 from voltage testing.
In this embodiment, preferably, the PLC control module 2 transmits the analyzed and processed information to the monitoring control module 9 through an RS232 or RS485 interface.
In this embodiment, preferably, the monitoring module 9 includes a correction module 91, and the correction module 91 is configured to correct the test parameter.
The calibration module 91 corrects the test parameters, so that the test power supply parameters are more accurate, and the error rate is lower.
In this embodiment, the monitoring module 9 preferably includes a self-test module 92, and the self-test module 82 is used for testing parameters for self-test.
When the system test has test deviation, the self-checking module 92 can carry out self-checking to verify whether the system power supply test is normal.
In this embodiment, preferably, the monitoring control module 9 further includes a fault alarm module 93, where the fault alarm module 93 is used for fault alarm.
When the system fails in testing, the fault alarm module 93 sends out alarm information to remind workers to process faults in time and maintain normal testing work.
In this embodiment, preferably, the PLC control module 2 includes a display module 10, and the display module 10 is configured to display information of detection and analysis.
The display module 10 can display various test parameters and various test information under the control of the PLC control module 2, thereby greatly facilitating testers to know the test information in time.
Example 2
The difference from the above embodiment is that the current protection circuit 43 further includes an overcurrent protection circuit, an overload protection circuit, and an overheat protection circuit; through the overcurrent protection circuit and the overload protection circuit, the overheat protection circuit protects the current test module 4, so that the current test work is more stable and reliable.
In this embodiment, preferably, the voltage protection circuit 53 further includes an overvoltage protection circuit, an overload protection circuit, and an overheat protection circuit; through the overvoltage protection circuit and the overload protection circuit, the overheat protection circuit protects the voltage test module 5, so that the voltage test work is more stable and reliable.
According to the invention, through researching a high-precision large-current generation technology, the high-precision controlled output of the output current in a wide range is realized, various interference problems of the switching power supply to the control circuit are effectively solved, and the requirement of testing on high-precision continuous adjustment of the injection current is met.
In various electrical equipment, the problem of electromagnetic interference generally exists, and when a high-voltage large-current test is carried out on a power semiconductor, the problems of accurate control of test current and prevention of peak voltage generated in the switching process of the power semiconductor mainly exist. If the test current is too large, the power semiconductor device can be damaged, if the test current is insufficient, the test requirement cannot be met, and the power semiconductor device can be damaged due to spike voltage generated in the switching-off process of the power semiconductor.
Therefore, the invention effectively reduces the interference of the switching power supply to the control circuit by continuously improving the technical scheme and adopting the high-efficiency low-noise multi-stage isolation technology, thereby creating conditions for realizing high-precision large-current output. The multi-module parallel and closed-loop control technology is utilized to realize high-precision controlled output of output current in a wide range, and the requirement of high-precision continuous adjustment on injection current in a test is met.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (6)
1. A power semiconductor device characteristic detection and analysis system is characterized in that: the device comprises a data acquisition module, a PLC control module, a multi-gear switching module, a current test module, a voltage test module, a power test module, a pulse test module, a data analysis module and a monitoring module;
the data acquisition module is used for acquiring input power signals; the PLC control module is used for controlling and analyzing power supply information and controlling power supply signal output; the multi-gear switching module is used for controlling switching of a test signal in a multi-gear manner; the current testing module is used for testing a current signal; the voltage testing module is used for testing a voltage signal; the power test module is used for testing a power signal; the pulse test module is used for testing a pulse signal; the data analysis module is used for analyzing the information processed by the PLC control module; the monitoring module is used for monitoring and analyzing test data information;
the data acquisition module inputs the acquired power supply signal to the PLC control module; the PLC control module respectively controls the current test module, the voltage test module, the power test module and the pulse test module through the multi-gear switching module; and the PLC control module is used for respectively controlling the data analysis module and the monitoring module.
2. The power semiconductor device characteristic detection and analysis system according to claim 1, wherein: the model of the PLC control module is a CPU of Exadata.
3. The power semiconductor device characteristic detection and analysis system according to claim 1, wherein: the current testing module comprises a micro-current testing module, a large-current testing module and a current protection circuit; the current protection circuit is used for protecting the current test module to perform current test.
4. The power semiconductor device characteristic detection and analysis system according to claim 1, wherein: the voltage testing module comprises a medium-low voltage testing module, a high voltage testing module and a voltage protection circuit; the voltage protection circuit is used for protecting the voltage test module to carry out voltage test.
5. The power semiconductor device characteristic detection and analysis system according to claim 1, wherein: the monitoring module comprises a correction module, a self-checking module and a fault warning module; the calibration module is used for calibrating the test parameters, the self-checking module is used for self-checking the test parameters, and the fault warning module is used for fault warning.
6. The power semiconductor device characteristic detection and analysis system according to claim 1, wherein: the PLC control module comprises a display module, and the display module is used for displaying information of detection and analysis.
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| CN202110526145.5A CN113238135A (en) | 2021-05-14 | 2021-05-14 | Power semiconductor device characteristic detection and analysis system |
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Citations (5)
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| US20120098573A1 (en) * | 2010-10-22 | 2012-04-26 | Fuji Electric Co., Ltd. | Current detection circuit for a power semiconductor device |
| CN202210146U (en) * | 2011-08-03 | 2012-05-02 | 刘冲 | Pulse heavy current amplitude calibrating device for semiconductor device test system |
| CN105952566A (en) * | 2015-03-09 | 2016-09-21 | 富士电机株式会社 | Semiconductor device |
| CN206788313U (en) * | 2017-06-05 | 2017-12-22 | 中国电子技术标准化研究院 | A kind of bipolar power transistor switch time parameter and standard detection means |
| CN108614167A (en) * | 2016-12-09 | 2018-10-02 | 株洲中车时代电气股份有限公司 | A kind of (PCC) power failure logging diagnostic system and method |
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2021
- 2021-05-14 CN CN202110526145.5A patent/CN113238135A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120098573A1 (en) * | 2010-10-22 | 2012-04-26 | Fuji Electric Co., Ltd. | Current detection circuit for a power semiconductor device |
| CN202210146U (en) * | 2011-08-03 | 2012-05-02 | 刘冲 | Pulse heavy current amplitude calibrating device for semiconductor device test system |
| CN105952566A (en) * | 2015-03-09 | 2016-09-21 | 富士电机株式会社 | Semiconductor device |
| CN108614167A (en) * | 2016-12-09 | 2018-10-02 | 株洲中车时代电气股份有限公司 | A kind of (PCC) power failure logging diagnostic system and method |
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