CN113237834B - Chiral molecule chiral resolution device and method based on optical spin Hall effect - Google Patents

Chiral molecule chiral resolution device and method based on optical spin Hall effect Download PDF

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CN113237834B
CN113237834B CN202110772342.5A CN202110772342A CN113237834B CN 113237834 B CN113237834 B CN 113237834B CN 202110772342 A CN202110772342 A CN 202110772342A CN 113237834 B CN113237834 B CN 113237834B
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唐婷婷
梁潇
肖佳欣
李朝阳
孙萍
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Chengdu University of Information Technology
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Abstract

The invention provides a chiral molecule chiral resolution device and method based on a spin Hall effect, belonging to the technical field of optics2YIG-CeYIG, a second Glan polarizer, a second lens and a laser beam analyzer CCD. The invention can directly, rapidly and simply carry out chiral resolution on chiral molecules, and can carry out chiral resolution by using chiral molecule solution with lower concentration.

Description

Chiral molecule chiral resolution device and method based on optical spin Hall effect
Technical Field
The invention belongs to the technical field of optics, and particularly relates to a chiral molecule chiral resolution device and method based on a light spin Hall effect.
Background
The identification and sensing of chiral molecules have great research significance in the fields of pharmacology, biology, chemistry and the like, and attract the wide attention of people. In previous researches, most of DNA and protein are chiral molecules, and because the interaction of the DNA and the protein with polarized light can rotate and orient the polarization plane, the two isomers are called L-levorotation and D-dextrorotation, and the space structure of the molecule can be distinguished through chiral detection. For example, the use of the sensing of chiral molecules, one isomer of which has a sedative effect and the other isomer of which has a teratogenic effect, in pharmacology, has led to the birth of large numbers of malformed infants, a typical example of a "stop response" event that has led to world wide pandemic episodes. Moreover, chiral drugs including pesticides and veterinary drugs have become an inevitable trend in the future pharmaceutical field, and the sales volume of chiral drugs is not small, so that the research on the recognition and sensing of chiral molecules is urgent and important. There are many methods for detecting chiral molecules by optical means, and circular dichroism, optical rotation, fluorescence sensors, and the like are used in many cases at present. With the development of a weak measurement technology and a light spin hall effect in recent years, the technology is widely applied to the aspects of refractive index sensing, graphene thickness measurement, light field regulation and control and the like, and can detect unknown micro displacement in real time and high sensitivity.
Disclosure of Invention
Aiming at the defects in the prior art, the chiral resolution device and method for chiral molecules based on the optical spin Hall effect can directly, quickly and simply perform chiral resolution on chiral molecules.
In order to achieve the above purpose, the invention adopts the technical scheme that:
the scheme provides a chiral molecule chiral resolution device based on a light spinning Hall effect, which comprises a laser, a diaphragm, a half-wave plate, a first lens, a first Glan polarizer, a cuvette and a thin film SiO which are sequentially arranged2-YIG-CeYIG, a second glan polarizer, a second lens and a laser beam analyzer CCD;
a laser is used for emitting laser with the wavelength of 632.8 nanometers; limiting stray light of laser by using a diaphragm; the half-wave plate is used for adjusting the laser intensity after the stray light is limited; focusing a laser beam by using a first lens, preselecting the laser beam by using a first Glan polarizer, and irradiating the preselected laser beam to the SiO thin film through a cuvette filled with chiral solution2Carrying out total reflection on YIG-CeYIG, and coupling to obtain spin splitting; and interfering the independent components of the laser after spin splitting through a second Glan polarizer and a second lens, amplifying the observed quantity, and performing light spot display and displacement reading by using a laser beam analyzer (CCD).
Further, the thin film SiO2YIG-CeYIG is a three-layer film structure.
Still further, the incident angle of the total reflection is 73 °.
Still further, the laser emitted by the laser in the step S3For a horizontally polarized Gaussian beam, the angular spectrum E of said Gaussian beamiThe expression is as follows:
Figure DEST_PATH_IMAGE001
wherein, w0Denotes the girdling width, kix、kiyThe x-component and y-component of the incident wavevector, respectively.
Still further, the polarization state of the laser light emitted by the laser in the step S3 incident on the first glan polarizer
Figure DEST_PATH_IMAGE002
The expression of (a) is as follows:
Figure DEST_PATH_IMAGE003
wherein,
Figure DEST_PATH_IMAGE004
and
Figure DEST_PATH_IMAGE005
representing two intrinsic quantum states.
Still further, in the step S5, after the laser beam passes through the cuvette, the chiral molecule chiral resolution device is in an initial state
Figure DEST_PATH_IMAGE006
The expression of (a) is as follows:
Figure DEST_PATH_IMAGE008
wherein,
Figure DEST_PATH_IMAGE009
the angle of optical rotation of the chiral solution is shown,
Figure DEST_PATH_IMAGE010
which represents the state of the horizontal polarization,
Figure DEST_PATH_IMAGE011
indicating the vertical polarization state.
Still further, the expression of the displacement < y > in the step S5 is as follows:
Figure DEST_PATH_IMAGE012
Figure DEST_PATH_IMAGE013
Figure DEST_PATH_IMAGE014
Figure DEST_PATH_IMAGE015
Figure DEST_PATH_IMAGE017
Figure DEST_PATH_IMAGE019
wherein z represents an effective focal length of the second lens,
Figure DEST_PATH_IMAGE020
the distance is expressed in terms of the rayleigh distance,
Figure DEST_PATH_IMAGE021
denotes the angle of rotation, k denotes the wavevector, W0Denotes the beam waist radius, rsExpressing the reflection coefficient of s-polarized light, rpRepresenting the reflection coefficient of p-polarized light,
Figure DEST_PATH_IMAGE022
indicating waterThe light generated is reflected at the interface by the flat polarized light,
Figure DEST_PATH_IMAGE023
representing light produced by reflection of horizontally polarized light at an interface, R0Which represents the rayleigh distance of the light beam,
Figure DEST_PATH_IMAGE025
representing the angle of incidence.
The invention also provides a chiral molecule chiral resolution method based on the optical spin Hall effect, which comprises the following steps:
s1, dissolving a sample to be detected by using ultrasonic waves;
s2 ultrasonic cleaning of thin SiO film2YIG-CeYIG, and SiO thin film with refractive index matching fluid2YIG-CeYIG is glued on the prism for supporting;
s3, starting the laser, limiting laser emitted by the laser by using a diaphragm, and adjusting the laser intensity after the stray light is limited by using a half-wave plate;
s4, focusing the laser beam by using a first lens, preselecting the laser beam by using a first Glan polarizer, and irradiating the preselection laser beam to the SiO film through a cuvette filled with deionized water2Carrying out total reflection on YIG-CeYIG, and coupling to obtain spin splitting;
s5, interfering each single component of the laser after spin splitting through a second Glan polarizer and a second lens, amplifying the observed quantity, presenting two symmetric light spots without stray spots by using a laser beam analyzer (CCD), recording the vertical coordinate of the moment, and regarding the vertical coordinate as a zero point;
s6, sucking the deionized water out of the cuvette by using a liquid transfer device, and putting the chiral solution to be detected into the cuvette by using the liquid transfer device;
and S7, adding the chiral solution to be detected into the cuvette, and displaying light spots and reading vertical coordinate displacement by using a laser beam analyzer CCD. .
The invention has the beneficial effects that:
(1) the invention can utilize chiral molecule solution with lower concentration to distinguish chirality. Using a spinning hall effect device, a cuvette containing a solution of chiral molecules of unknown chirality was placed behind a front selective glan polarizer. Using a light spinning Hall effect as a pointer, when the solution to be detected is not placed, debugging an initial light spot to be a symmetrical light spot, and setting the initial displacement to be 0; when the solution to be measured is added, the light spot will tilt in one direction, the light spot will no longer be symmetrical, and the displacement will be positive or negative at this time. For the laser beam analyzer CCD used, the handedness thereof is represented by right (D type) when the spot is tilted upward, the displacement is positive when the spot is tilted downward, and the handedness thereof is represented by left (L type) when the spot is tilted downward, the displacement is negative. The sensitivity of the CEYIG film can be enhanced by adding the CEYIG film, and chiral resolution can be better carried out.
(2) The invention utilizes a regulating and controlling device based on the optical spin Hall effect to carry out chiral resolution on chiral solution, and the oxide film can improve the sensitivity and better carry out chiral resolution.
(3) The invention can distinguish the chirality of the chiral molecule by simply observing the light spot change on the laser beam analyzer CCD.
Drawings
FIG. 1 is a schematic structural diagram of the apparatus of the present invention.
FIG. 2 is a flow chart of the method of the present invention.
Wherein, 1-laser, 2-diaphragm, 3-half-wave plate, 4-first lens, 5-first Glan polarizer, 6-cuvette, 7-thin film SiO2YIG-CeYIG, 8-second Glan polarizer, 9-second lens, 10-laser beam analyzer CCD.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
There are many methods for detecting chiral molecules by optical means, and circular dichroism, optical rotation, fluorescence sensors, mass spectrometry, chromatography, and the like are used in many cases at present. Recently, the identification and sensing of chiral molecules by designing complex super-surface structures has also been proposed. However, the technology of making samples on a super surface is not mature at present, and the fluorescence sensor has the possibility of destroying the internal structure of the chiral molecules. Optical rotation is one of effective methods for chiral molecule identification and sensing, and meanwhile, the precision of a current standard polarimeter in a laboratory is less than 0.001 degrees, but the detection of the optical rotation is not easy to realize by a traditional method. For low-concentration chiral solution, the existing optical equipment is difficult to directly measure, and the traditional measuring method is influenced by environmental factors, so that the measuring precision and noise are almost the same, and the measuring precision is difficult to improve.
In view of this, as shown in fig. 1, the invention provides a chiral molecule chiral resolution device based on optical spin hall effect, which includes a laser 1, a diaphragm 2, a half-wave plate 3, a first lens 4, a first glan polarizer 5, a cuvette 6, and a thin film SiO, which are sequentially disposed2YIG-CeYIG7, a second glan polarizer 8, a second lens 9, and a laser beam analyzer CCD 10.
In this embodiment, a laser 1 is used to emit laser with a wavelength of 632.8 nm; the stray light of the laser is limited by the diaphragm 2; the half-wave plate 3 is used for adjusting the laser intensity after the stray light is limited; the laser beam is focused by a first lens 4, pre-selected by a first Glan polarizer 5, and irradiated to the SiO film through a cuvette 6 filled with chiral solution2-total reflection on YIG-CeYIG7, coupling resulting in spin splitting; the individual components of the spin-split laser light are interfered with each other by the second glan polarizer 8 and the second lens 9, the observed amount is enlarged, and then spot display and displacement reading are performed by the laser beam analyzer CCD 10.
In this embodiment, the thin film SiO2YIG-CeYIG7 is a three-layer thin film structure made by Pulsed Laser Deposition (PLD). Y2O3 (Alfa-Aesar, purity 99.99%), CeO2 (Al)fa-Aesar, 99.99% purity) and Fe2O3 (Alfa-Aesar, 99.945% purity) powders were processed by standard solid phase reaction to obtain Y3Fe5O12 (YIG) and Ce1Y2Fe5O12 (CeYIG) ceramic targets. The laser source was a complete Pro 205 KrF laser operating at 248 nm. Because CeYIG is difficult to crystallize on a silicon dioxide substrate due to the large lattice mismatch, a 30nm thick YIG thin film needs to be deposited on the silicon dioxide substrate as a seed layer. Prior to YIG deposition, the chamber was evacuated to a base pressure of 5X 10-7mbar with a target-to-base distance of 5.5 cm. During the deposition, the substrate temperature was maintained at 400 ℃ and oxygen gas was pumped into the deposition chamber at a partial pressure of 6.7X 10-3 mbar. After depositing YIG, crystallizing the YIG film by Rapid Thermal Annealing (RTA) to 800 ℃ for 3min in an environment with an oxygen partial pressure of 2.66mbar, and then depositing CeYIG film on the YIG seed layer at a substrate temperature of 650 ℃ while the oxygen partial pressure is maintained at 1.33X 10-2 mbar. After CeYIG deposition, the film was held in place at the deposition temperature for 30 minutes and then cooled at a rate of 5 ℃/min. The SiO2-YIG-CeYIG three-layer film structure designed in the way is manufactured.
For fabrication process reasons, it is first necessary to deposit a 30nm thick YIG on a silicon dioxide substrate. Then YIG is used as a seed layer, on which a thin CeYIG film (typically tens of nanometers) of the desired thickness is deposited. Therefore, a three-layer thin film structure of SiO2-YIG-CeYIG can be determined. When the wavelength of incident light is 632.8nm, the refractive index of the silicon dioxide substrate is 1.45, and the thickness is about 1 mm; the weak YIG magneto-optical effect can be regarded as a non-magneto-optical material, the refractive index is 2.38, and the thickness is 30 nm; the main diagonal element of the dielectric constant third-order matrix of CeYIG is
Figure DEST_PATH_IMAGE027
The non-dominant diagonal elements are
Figure DEST_PATH_IMAGE029
And the thickness is 56 nm.
When the incident light is a horizontally polarized gaussian beam, its angular spectrum can be expressed as:
Figure DEST_PATH_IMAGE030
wherein the girdling width is w0,kix, kiyThe x-component and y-component of the incident wavevector, respectively.
After the light is incident to the Glan polarizer, the polarization state of emergent light is as follows:
Figure DEST_PATH_IMAGE032
assuming that the optical rotation angle of the chiral solution is a, the state of the system after passing through the chiral solution is:
Figure DEST_PATH_IMAGE033
after reflection at the film interface, it produces SHEL with a Bery geometric phase of
Figure DEST_PATH_IMAGE035
Wherein
Figure DEST_PATH_IMAGE036
For spin splitting, spin operators
Figure DEST_PATH_IMAGE037
. Thereafter the selection state is
Figure DEST_PATH_IMAGE039
Then, according to the expression for weak values:
Figure DEST_PATH_IMAGE040
wherein,
Figure DEST_PATH_IMAGE041
,Awa weak value representing the spin of the photon,
Figure DEST_PATH_IMAGE042
representing the observables of the system.
The present application can obtain the amplified beam displacement of the weak measurement system through geometric optics calculation:
Figure DEST_PATH_IMAGE043
wherein z is the effective focal length of the second lens;
Figure DEST_PATH_IMAGE044
the relation between the concentration of the chiral solution and the spin displacement after the film is added can be obtained according to a formula, different amplified light beam displacement values can be obtained when sample solutions with different concentrations are placed, and the chirality of the sample solution is judged according to the displacement value obtained on a laser beam analyzer CCD.
As shown in fig. 2, the invention provides a chiral molecular chiral resolution method based on optical spin hall effect, comprising the following steps:
s1, dissolving a sample to be detected by using ultrasonic waves;
s2 ultrasonic cleaning of thin SiO film2YIG-CeYIG, and SiO thin film with refractive index matching fluid2YIG-CeYIG is glued on the prism for supporting;
s3, starting the laser, limiting laser emitted by the laser by using a diaphragm, and adjusting the laser intensity after the stray light is limited by using a half-wave plate;
s4, focusing the laser beam by using a first lens, preselecting the laser beam by using a first Glan polarizer, and irradiating the preselection laser beam to the SiO film through a cuvette filled with deionized water2Carrying out total reflection on YIG-CeYIG, and coupling to obtain spin splitting;
s5, interfering each single component of the laser after spin splitting through a second Glan polarizer and a second lens, amplifying the observed quantity, presenting two symmetric light spots without stray spots by using a laser beam analyzer (CCD), recording the vertical coordinate of the moment, and regarding the vertical coordinate as a zero point;
s6, sucking the deionized water out of the cuvette by using a liquid transfer device, and putting the chiral solution to be detected into the cuvette by using the liquid transfer device;
s7, adding the chiral solution to be detected into the cuvette, displaying light spots and reading vertical coordinate displacement by using a laser beam analyzer CCD, adding the chiral solution to be detected into the cuvette, wherein the symmetric light spots become asymmetric at the moment, and the vertical coordinate also changes. For example, in the laser beam analyzer CCD of this experiment, the upward coordinate of the right-handed spot is positive, and the downward coordinate of the left-handed spot is negative.
Through the design, chiral resolution can be performed by using chiral molecule solution with lower concentration. A cuvette containing a solution of chiral molecules of unknown chirality was placed between a front selective glan polarizer and a prism using a spinning hall effect device. Using a light spinning Hall effect as a pointer, when the solution to be detected is not placed, debugging an initial light spot to be a symmetrical light spot, and setting the initial displacement to be 0; when the solution to be measured is added, the light spot will tilt in one direction, the light spot will no longer be symmetrical, and the displacement will be positive or negative at this time. For the laser beam analyzer CCD we used, the handedness is right-handed (D-type) when the spot is tilted up, the displacement is positive when the spot is tilted down, and left-handed (L-type) when the spot is tilted down, the displacement is negative. Compared with an empty prism, the CEYIG film is added to enhance the sensitivity and enable chiral resolution to be better.

Claims (8)

1. The chiral molecule chiral resolution device based on the optical spin Hall effect is characterized by comprising a laser (1), a diaphragm (2), a half-wave plate (3), a first lens (4), a first Glan polarizer (5), a cuvette (6) and a thin film SiO (silicon dioxide) which are sequentially arranged2-YIG-CeYIG (7), a second glan polarizer (8), a second lens (9) and a laser beam analyzer CCD (10);
a laser (1) is used for emitting laser with the wavelength of 632.8 nanometers; the stray light of the laser is limited by using a diaphragm (2); the half-wave plate (3) is used for adjusting the laser intensity after the stray light is limited; the laser beam is focused by means of a first lens (4) and is pre-polarized by means of a first Glan polarizer (5)Optionally, irradiating the thin film SiO with a preselected laser beam through a cuvette (6) containing a chiral solution2-total reflection on YIG-CeYIG (7), coupling resulting in spin splitting; the individual components of the laser light after spin-splitting are interfered by a second Glan polarizer (8) and a second lens (9), the observed quantity is enlarged, and spot display and spot displacement reading are performed by a laser beam analyzer CCD (10).
2. The chiral molecular chiral resolution device based on optical spin Hall effect according to claim 1, wherein said thin film SiO is2YIG-CeYIG (7) is a three-layer film structure.
3. The chiral molecular chiral resolution device based on the optical spin hall effect according to claim 1, wherein the incident angle of the total reflection is 73 °.
4. The chiral molecular chiral resolution device based on the optical spin hall effect according to claim 1, wherein the laser emitted by the laser is a horizontally polarized gaussian beam, and the angular spectrum E of the gaussian beamiThe expression is as follows:
Figure 77749DEST_PATH_IMAGE001
wherein, w0Denotes the girdling width, kix、kiyThe x-component and y-component of the incident wavevector, respectively.
5. The chiral molecular chiral resolution device based on optical spin hall effect according to claim 1, wherein the laser emitted from the laser is incident to the polarization state of the first glan polarizer
Figure 695812DEST_PATH_IMAGE002
The expression of (a) is as follows:
Figure 841622DEST_PATH_IMAGE003
wherein,
Figure 887681DEST_PATH_IMAGE004
and
Figure 573877DEST_PATH_IMAGE005
representing two intrinsic quantum states.
6. The chiral molecular chiral resolution device based on optical spin hall effect according to claim 1, wherein the initial state of the chiral molecular chiral resolution device is after the laser beam passes through the cuvette
Figure 249709DEST_PATH_IMAGE006
The expression of (a) is as follows:
Figure 956634DEST_PATH_IMAGE007
wherein,
Figure 147444DEST_PATH_IMAGE008
the angle of optical rotation of the chiral solution is shown,
Figure 575014DEST_PATH_IMAGE009
which represents the state of the horizontal polarization,
Figure 229986DEST_PATH_IMAGE010
indicating the vertical polarization state.
7. The chiral molecular chiral resolution device based on the optical spin hall effect according to claim 4, wherein the light spot displacement is expressed as follows:
Figure 779916DEST_PATH_IMAGE011
Figure 395706DEST_PATH_IMAGE012
Figure 17180DEST_PATH_IMAGE013
Figure 464342DEST_PATH_IMAGE014
Figure 857277DEST_PATH_IMAGE015
Figure 350575DEST_PATH_IMAGE016
wherein,
Figure 182265DEST_PATH_IMAGE017
indicating the spot displacement, z the effective focal length of the second lens,
Figure 687195DEST_PATH_IMAGE018
the distance is expressed in terms of the rayleigh distance,
Figure 313349DEST_PATH_IMAGE019
denotes the angle of rotation, k denotes the wavevector, W0Denotes the beam waist radius, rsExpressing the reflection coefficient of s-polarized light, rpRepresenting the reflection coefficient of p-polarized light,
Figure 293943DEST_PATH_IMAGE020
representing light generated by reflection of horizontally polarized light at an interface,
Figure 867007DEST_PATH_IMAGE021
representing light produced by reflection of horizontally polarized light at an interface, R0Which represents the rayleigh distance of the light beam,
Figure 23182DEST_PATH_IMAGE022
representing the angle of incidence.
8. A chiral molecule chiral resolution method based on an optical spin Hall effect is characterized by comprising the following steps:
s1, dissolving a sample to be detected by using ultrasonic waves;
s2 ultrasonic cleaning of thin SiO film2YIG-CeYIG, and SiO thin film with refractive index matching fluid2YIG-CeYIG is glued on the prism for supporting;
s3, starting the laser, limiting laser emitted by the laser by using a diaphragm, and adjusting the laser intensity after the stray light is limited by using a half-wave plate;
s4, focusing the laser beam by using a first lens, preselecting the laser beam by using a first Glan polarizer, and irradiating the preselection laser beam to the SiO film through a cuvette filled with deionized water2Carrying out total reflection on YIG-CeYIG, and coupling to obtain spin splitting;
s5, interfering each single component of the laser after spin splitting through a second Glan polarizer and a second lens, amplifying the observed quantity, presenting two symmetric light spots without stray spots by using a laser beam analyzer (CCD), recording the vertical coordinate of the moment, and regarding the vertical coordinate as a zero point;
s6, sucking the deionized water out of the cuvette by using a liquid transfer device, and putting the chiral solution to be detected into the cuvette by using the liquid transfer device;
s7, adding the chiral solution to be detected into the cuvette, and displaying light spots and reading vertical coordinate displacement by using a laser beam analyzer (CCD);
wherein, the expression of the light spot displacement is as follows:
Figure 413712DEST_PATH_IMAGE023
Figure 225810DEST_PATH_IMAGE024
Figure 664882DEST_PATH_IMAGE013
Figure 269038DEST_PATH_IMAGE025
Figure 440257DEST_PATH_IMAGE026
Figure 801968DEST_PATH_IMAGE027
wherein,
Figure 109977DEST_PATH_IMAGE028
indicating the spot displacement, z the effective focal length of the second lens,
Figure 178427DEST_PATH_IMAGE018
the distance is expressed in terms of the rayleigh distance,
Figure 582864DEST_PATH_IMAGE019
denotes the angle of rotation, k denotes the wavevector, W0Denotes the beam waist radius, rsExpressing the reflection coefficient of s-polarized light, rpRepresenting the reflection coefficient of p-polarized light,
Figure 759767DEST_PATH_IMAGE020
representing light generated by reflection of horizontally polarized light at an interface,
Figure 212745DEST_PATH_IMAGE021
representing light produced by reflection of horizontally polarized light at an interface, R0Which represents the rayleigh distance of the light beam,
Figure 463598DEST_PATH_IMAGE022
representing the angle of incidence.
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Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5887335A (en) * 1991-07-29 1999-03-30 Magna-Lastic Devices, Inc. Method of producing a circularly magnetized non-contact torque sensor
EP1678313A2 (en) * 2003-10-21 2006-07-12 Cargill, Incorporated Production of monatin and monatin precursors
CN101738374A (en) * 2008-11-20 2010-06-16 株式会社日立制作所 Spin-polarized charge carrier device
WO2011139150A1 (en) * 2010-05-03 2011-11-10 Asmr Holding B.V. Improved optical rangefinding and imaging apparatus
WO2012106648A1 (en) * 2011-02-03 2012-08-09 University Of Maryland, College Park Two-dimensional coupled resonator optical waveguide arrangements and systems, devices, and methods thereof
CN104101933A (en) * 2014-07-15 2014-10-15 首都师范大学 Planar optical element and design method thereof
WO2015126373A1 (en) * 2014-02-19 2015-08-27 Empire Technology Development Llc Biosensing devices and methods of using and preparing the same
WO2017167294A1 (en) * 2016-03-31 2017-10-05 Weng-Dah Ken Matter wave treatment method and non-invasive inspection apparatus
CN107957604A (en) * 2017-12-01 2018-04-24 天津大学 Terahertz chirality modulator based on super structure pore structure
CN108051406A (en) * 2018-02-02 2018-05-18 成都信息工程大学 A kind of electrooptic effect fiber waveguide detection device
CN108519565A (en) * 2018-04-09 2018-09-11 四川大学 Low field strength analyzer based on the weak measurement of quantum and method
CN108594481A (en) * 2018-06-05 2018-09-28 北京航空航天大学 The THz wave transmitter of magnetic control polarization state
CN109596576A (en) * 2017-09-30 2019-04-09 清华大学 Nanometer light field spin-orbit interaction measuring system and method
CN110455406A (en) * 2019-07-24 2019-11-15 深圳市深光谷科技有限公司 Device and method for measuring spin angular momentum of optical field
CN110672525A (en) * 2019-10-23 2020-01-10 成都信息工程大学 Solution concentration measuring device and method and solution sensing sensitivity measuring method
CN110768087A (en) * 2019-11-22 2020-02-07 北京航空航天大学 Polarization tunable terahertz wave radiation source
US10657456B1 (en) * 2018-06-15 2020-05-19 Brookhaven Science Associates, Llc Quantum computing using chiral qubits
CN111916976A (en) * 2020-08-10 2020-11-10 北京航空航天大学 Spin-emission-based ultra-wideband polarization tunable terahertz radiation source
CN111982823A (en) * 2020-08-05 2020-11-24 电子科技大学 Magnetic field bias chiral molecular sensing device
CN112510469A (en) * 2020-09-27 2021-03-16 北京航空航天大学 Polarization tunable terahertz radiation source based on spin emission and linearly polarized light current
WO2021091484A1 (en) * 2019-11-05 2021-05-14 Nanyang Technological University Magnetic logic device, circuit having magnetic logic devices, and methods for controlling the magnetic logic device and the circuit
EP3828972A1 (en) * 2019-11-27 2021-06-02 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Chiral crystals for water electrolysis and fuel cells
CN113030016A (en) * 2021-03-04 2021-06-25 湖南理工学院 Weak measurement-based method for identifying type of Wilson semimetal and measuring inclination of Wilson cone

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4051480B2 (en) * 2001-09-28 2008-02-27 独立行政法人産業技術総合研究所 Magneto-optic device using spin chirality
US7996156B2 (en) * 2002-03-07 2011-08-09 The United States Of America As Represented By The Secretary, Department Of Health And Human Services Methods for predicting properties of molecules
US9909986B2 (en) * 2003-10-15 2018-03-06 Applied Research And Photonics, Inc. Thickness determination and layer characterization using terahertz scanning reflectometry
US20060199812A1 (en) * 2005-01-24 2006-09-07 Amgen Inc. Method of conjugating aminothiol containing molecules to vehicles
JP5223208B2 (en) * 2007-03-01 2013-06-26 株式会社日立製作所 Transmission electron microscope
JP2011522422A (en) * 2008-05-27 2011-07-28 ユニバーシティ オブ ヒューストン Fiber photovoltaic device and method for its manufacture
US10006859B2 (en) * 2014-07-24 2018-06-26 Nxgen Partners Ip, Llc System and method for multi-parameter spectroscopy
US9575001B2 (en) * 2014-07-24 2017-02-21 Nxgen Partners Ip, Llc System and method for detection of materials using orbital angular momentum signatures
US9865713B2 (en) * 2015-05-31 2018-01-09 University Of Virginia Patent Foundation Extremely large spin hall angle in topological insulator pn junction
US10490247B2 (en) * 2015-07-24 2019-11-26 The University Of Tokyo Memory element
US10209192B2 (en) * 2015-10-05 2019-02-19 Nxgen Partners Ip, Llc Spectroscopy with correlation matrices, ratios and glycation
DE102016101813B4 (en) * 2016-02-02 2020-08-06 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Asymmetric optical resonator, optical devices having the asymmetric optical resonator and use
CN108447981B (en) * 2018-02-05 2020-08-28 清华大学 Double-channel topological insulator structure, preparation method and method for generating quantum spin Hall effect
US10733729B2 (en) * 2018-09-17 2020-08-04 Research Foundation Of The City University Of New York Method for imaging biological tissue using polarized Majorana photons
US12075708B2 (en) * 2019-05-29 2024-08-27 National University Of Singapore Spin torque device having a spin current polarized at a canting angle of out-of-plane spin
US11639975B2 (en) * 2019-10-14 2023-05-02 The Regents Of The University Of California Spin-based detection of terahertz and sub-terahertz electromagnetic radiation

Patent Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5887335A (en) * 1991-07-29 1999-03-30 Magna-Lastic Devices, Inc. Method of producing a circularly magnetized non-contact torque sensor
EP1678313A2 (en) * 2003-10-21 2006-07-12 Cargill, Incorporated Production of monatin and monatin precursors
CN101738374A (en) * 2008-11-20 2010-06-16 株式会社日立制作所 Spin-polarized charge carrier device
WO2011139150A1 (en) * 2010-05-03 2011-11-10 Asmr Holding B.V. Improved optical rangefinding and imaging apparatus
WO2012106648A1 (en) * 2011-02-03 2012-08-09 University Of Maryland, College Park Two-dimensional coupled resonator optical waveguide arrangements and systems, devices, and methods thereof
WO2015126373A1 (en) * 2014-02-19 2015-08-27 Empire Technology Development Llc Biosensing devices and methods of using and preparing the same
CN104101933A (en) * 2014-07-15 2014-10-15 首都师范大学 Planar optical element and design method thereof
WO2017167294A1 (en) * 2016-03-31 2017-10-05 Weng-Dah Ken Matter wave treatment method and non-invasive inspection apparatus
CN109596576A (en) * 2017-09-30 2019-04-09 清华大学 Nanometer light field spin-orbit interaction measuring system and method
CN107957604A (en) * 2017-12-01 2018-04-24 天津大学 Terahertz chirality modulator based on super structure pore structure
CN108051406A (en) * 2018-02-02 2018-05-18 成都信息工程大学 A kind of electrooptic effect fiber waveguide detection device
CN108519565A (en) * 2018-04-09 2018-09-11 四川大学 Low field strength analyzer based on the weak measurement of quantum and method
CN108594481A (en) * 2018-06-05 2018-09-28 北京航空航天大学 The THz wave transmitter of magnetic control polarization state
US10657456B1 (en) * 2018-06-15 2020-05-19 Brookhaven Science Associates, Llc Quantum computing using chiral qubits
CN110455406A (en) * 2019-07-24 2019-11-15 深圳市深光谷科技有限公司 Device and method for measuring spin angular momentum of optical field
CN110672525A (en) * 2019-10-23 2020-01-10 成都信息工程大学 Solution concentration measuring device and method and solution sensing sensitivity measuring method
WO2021091484A1 (en) * 2019-11-05 2021-05-14 Nanyang Technological University Magnetic logic device, circuit having magnetic logic devices, and methods for controlling the magnetic logic device and the circuit
CN110768087A (en) * 2019-11-22 2020-02-07 北京航空航天大学 Polarization tunable terahertz wave radiation source
EP3828972A1 (en) * 2019-11-27 2021-06-02 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Chiral crystals for water electrolysis and fuel cells
CN111982823A (en) * 2020-08-05 2020-11-24 电子科技大学 Magnetic field bias chiral molecular sensing device
CN111916976A (en) * 2020-08-10 2020-11-10 北京航空航天大学 Spin-emission-based ultra-wideband polarization tunable terahertz radiation source
CN112510469A (en) * 2020-09-27 2021-03-16 北京航空航天大学 Polarization tunable terahertz radiation source based on spin emission and linearly polarized light current
CN113030016A (en) * 2021-03-04 2021-06-25 湖南理工学院 Weak measurement-based method for identifying type of Wilson semimetal and measuring inclination of Wilson cone

Non-Patent Citations (11)

* Cited by examiner, † Cited by third party
Title
Broadband on-chip photonic spin Hall element via inverse design;ZHENWEI XIE等;《Photonics Research》;20200225(第02期);第23-28页 *
Charge and spin Hall effect in spin chiral ferromagnetic graphene;Babak Zare Rameshti;《APPLIED PHYSICS LETTERS》;20131231;第103卷;第132409-1-4页 *
Dynamics of magnetic skyrmions;刘冶华等;《Chinese Physics B》;20200225(第01期);第24-39页 *
Enhanced and switchable spin Hall effect of light near the Brewster angle on reflection;Hailu Luo.et;《PHYSICAL REVIEW A》;20111231;第84卷;第043806-1-4页 *
Photonic spin Hall effect in metasurfaces: a brief review;Yachao Liu.et;《Nanophotonics》;20171231;第6卷(第1期);第51-70页 *
Switching the Optical Chirality in Magnetoplasmonic Metasurfaces Using Applied Magnetic Fields;Jun Qin.et;《ACS NANO》;20200219;第14卷;第2808-2816页 *
Tunable photonic spin Hall effect due to the chiral Hall effect in strained Weyl semimetals;Guangyi Jia.et;《New Journal of physics》;20210703;第23卷;第1-13页 *
光自旋霍尔效应及其研究进展;罗海陆等;《物理》;20121231;第41卷(第6期);第367-373页 *
基于光子自旋霍尔效应的折射率传感器研究;盛丽娟;《中国优秀硕士学位论文全文数据库信息科技辑》;20210301;第I140-476页 *
基于磁光波导的液体折射率传感特性研究;张艳芬等;《激光技术》;20170731;第41卷(第4期);第554-557页 *
基于超构表面的非线性光学与量子光学;石鸣谦等;《红外与激光工程》;20201231(第09期);第9-30页 *

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