CN113223955B - Automatic complementary etching method and device - Google Patents
Automatic complementary etching method and device Download PDFInfo
- Publication number
- CN113223955B CN113223955B CN202110500757.7A CN202110500757A CN113223955B CN 113223955 B CN113223955 B CN 113223955B CN 202110500757 A CN202110500757 A CN 202110500757A CN 113223955 B CN113223955 B CN 113223955B
- Authority
- CN
- China
- Prior art keywords
- etching
- complementary
- machine
- depth
- duration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The present disclosure relates to the technical field of semiconductors, and discloses an automatic complementary etching method and an automatic complementary etching device, wherein the automatic complementary etching method comprises the following steps: receiving an alarm signal sent by a first etching machine, and stopping etching the wafer in the first etching machine; receiving an operation parameter in a first etching machine, and when the operation parameter exceeds a set threshold value, withdrawing the wafer from the first etching machine; obtaining the etched time length of etching, and determining to perform complementary etching on the wafer when the etched time length is less than the process time length; and determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, and transferring the wafer to the second etching machine for complementary etching according to the complementary etching process. The automatic etching supplementing method avoids the scrapping of the wafer caused by pollution caused by particles and polymers falling on the wafer; the etching process is prevented from being influenced, and the working efficiency is ensured; and the determined complementary etching process ensures the accuracy of the complementary etching.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, in particular to an automatic complementary etching method and an automatic complementary etching device.
Background
However, if the etching machine 1 cannot recover to operate within a short time, as shown in fig. 1, due to the change of the indoor conditions of the etching machine 1, particles and polymers may fall on the wafer 2 to contaminate the wafer 2 to form the surface shown in fig. 2, so that the wafer 2 may be damaged and the wafer 2 may be discarded.
It is noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure and therefore may include information that does not constitute prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
The present disclosure is directed to overcome the above-mentioned deficiencies of the prior art and to provide an automatic complementary etching method and an automatic complementary etching apparatus.
According to an aspect of the present disclosure, there is provided an automatic complementary etching method, including:
receiving an alarm signal sent by a first etching machine, and stopping etching the wafer in the first etching machine;
receiving an operation parameter in the first etching machine, and when the operation parameter exceeds a set threshold value, withdrawing the wafer from the first etching machine;
obtaining the etched time length of etching, and determining to perform complementary etching on the wafer when the etched time length is smaller than the process time length;
and determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, and transferring the wafer to the second etching machine to perform complementary etching according to the complementary etching process.
In an exemplary embodiment of the present disclosure, the operating parameter includes one or more of temperature, pressure, and etch process end time.
In an exemplary embodiment of the present disclosure, the operating parameter exceeding a set threshold includes:
the temperature is less than or equal to 90 degrees Celsius, the pressure is greater than or equal to 5000mTorr, and the process end time is greater than or equal to one or more of 60 minutes.
In an exemplary embodiment of the present disclosure, the etching parameter of the first etching station includes an etching rate of the first etching station, and the etching parameter of the second etching station includes an etching rate of the second etching station.
In an exemplary embodiment of the disclosure, determining a complementary etching process according to the etching duration, the process duration, the etching parameter of the first etching machine and the etching parameter of the second etching machine comprises:
wherein T2 is a complementary etching duration, T1 is the etched duration, T is the process duration, V1 is the etching rate of the first etching machine, and V2 is the etching rate of the second etching machine;
the complementary etching process comprises the complementary etching time length.
In an exemplary embodiment of the disclosure, after transferring the wafer to the second etching machine to perform the complementary etching according to the complementary etching process, the automatic complementary etching method further includes:
obtaining the etching depth of the wafer after the complementary etching;
calculating the difference between the etching depth and the target etching depth;
when the difference value is within a set error range, storing the complementary etching time length, the etching depth, the target etching depth, the etched time length, the process time length, the etching parameter of the first etching machine and the etching parameter of the second etching machine to a first memory;
and when the difference exceeds the set error range, storing the complementary etching time length, the etching depth, the target etching depth, the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine to a second memory.
In an exemplary embodiment of the disclosure, before transferring the wafer to the second etching machine for performing the complementary etching according to the complementary etching process, the automatic complementary etching method further includes:
calculating an average or median of the etch depths stored in the first memory;
if the average value or the median is greater than the target etching depth, reducing the complementary etching time length; if the average or median is less than the target etch depth, increasing the length of the supplemental etch.
In an exemplary embodiment of the disclosure, before transferring the wafer to the second etching machine for performing the complementary etching according to the complementary etching process, the automatic complementary etching method further includes:
acquiring the etching depth of the latest time stored in the first memory;
if the etching depth is larger than the target etching depth, reducing the complementary etching time length; if the etch depth is less than the target etch depth, increasing the length of the supplemental etch.
In an exemplary embodiment of the disclosure, before transferring the wafer to the second etching machine for performing the complementary etching according to the complementary etching process, the automatic complementary etching method further includes:
and when the etching supplementing duration exceeds a set range, alarming and adjusting the etching supplementing duration.
In an exemplary embodiment of the present disclosure, when the etch-back duration exceeds a set range, the operating parameter, the etched duration, and the process duration corresponding to the etch-back duration are stored in a third memory.
According to another aspect of the present disclosure, there is provided an automatic supplemental etching apparatus including:
the first receiving assembly is used for receiving an alarm signal sent by a first etching machine and stopping etching the wafer in the first etching machine;
the second receiving component is used for receiving the operating parameters in the first etching machine, and when the operating parameters exceed a set threshold value, the wafer is withdrawn from the first etching machine;
the determining component is used for acquiring the etched time length after etching is carried out, and determining to carry out complementary etching on the wafer when the etched time length is smaller than the process time length;
and the control component is used for determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, and transferring the wafer to the second etching machine to perform complementary etching according to the complementary etching process.
In an exemplary embodiment of the disclosure, the etching parameter of the first etching machine includes an etching rate of the first etching machine, the etching parameter of the second etching machine includes an etching rate of the second etching machine, and the complementary etching process includes the complementary etching duration.
In an exemplary embodiment of the present disclosure, the automatic complementary etching apparatus further includes:
the first acquisition assembly is used for acquiring the etching depth of the wafer after the complementary etching;
a first calculation component for calculating a difference between the etch depth and a target etch depth;
the first memory is used for storing the complementary etching duration, the etching depth, the target etching depth, the etched duration, the processing duration, the etching parameter of the first etching machine and the etching parameter of the second etching machine corresponding to the difference value within a set error range;
and the second memory is used for storing the complementary etching time length, the etching depth, the target etching depth, the etched time length, the process time length, the etching parameter of the first etching machine and the etching parameter of the second etching machine corresponding to the difference value exceeding the set error range.
In an exemplary embodiment of the present disclosure, the automatic complementary etching apparatus further includes:
a second calculation component for calculating an average or median of the etch depths stored in the first memory;
an adjustment component for adjusting to reduce the complementary etching time length when the average value or the median is greater than the target etching depth; adjusting to increase the supplemental etch time period when the average or median is less than the target etch depth.
In an exemplary embodiment of the present disclosure, the automatic complementary etching apparatus further includes:
a second obtaining component for obtaining the last etching depth stored in the first memory;
the adjusting component is used for adjusting and reducing the complementary etching time length when the etching depth is larger than the target etching depth; adjusting to increase the supplemental etch time period when the etch depth is less than the target etch depth.
In an exemplary embodiment of the present disclosure, the automatic complementary etching apparatus further includes:
and the alarm component is used for alarming when the etching repairing duration exceeds a set range.
In an exemplary embodiment of the present disclosure, the automatic complementary etching apparatus further includes:
and the third memory is used for storing the operating parameters, the etched duration and the process duration corresponding to the etching supplementing duration into the third memory when the etching supplementing duration exceeds a set range.
The automatic complementary etching method and the automatic complementary etching device receive the operation parameters in the first etching machine, and when the operation parameters exceed the set threshold, the wafer is withdrawn from the first etching machine; therefore, the wafer is prevented from being placed in the first etching machine for a long time under the condition that the first etching machine cannot recover to operate in a short time, and the problem that particles and polymers fall on the wafer to cause pollution to the wafer and cause scrapping is avoided. Obtaining the etched time length of etching, and determining to perform complementary etching on the wafer when the etched time length is less than the process time length; determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, and transferring the wafer to the second etching machine for complementary etching according to the complementary etching process; the wafer is subjected to complementary etching through the second etching machine table, so that the etching is prevented from being influenced, and the working efficiency is ensured; and the determined complementary etching process ensures the accuracy of the complementary etching.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
FIG. 1 is a schematic view of a wafer contaminated in an etching apparatus.
Fig. 2 is a schematic view of a surface of a contaminated wafer.
FIG. 3 is a schematic block flow diagram of an exemplary embodiment of an automatic post-etch method of the present disclosure.
FIG. 4 is a schematic block flow diagram of another exemplary embodiment of an automated post-etch method of the present disclosure.
Fig. 5 is a schematic structural diagram of an exemplary embodiment of an automatic post-etching apparatus according to the present disclosure.
Description of reference numerals:
1. an etching machine; 2. a wafer; 3. a first receiving component; 4. a second receiving component; 5. determining a component; 6. a control component; 7. (ii) particulate matter; 8. a polymer.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted. Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.
Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.
The terms "a," "an," "the," "said," and "at least one" are used to indicate the presence of one or more elements/components/parts/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; the terms "first," "second," and "third," etc. are used merely as labels, and are not limiting on the number of their objects.
The disclosed embodiments provide an automatic complementary etching method, which may include the following steps, as shown in fig. 3:
step S10, receiving an alarm signal from the first etching machine, and terminating the etching of the wafer in the first etching machine.
Step S20, receiving the operation parameters in the first etching machine, and when the operation parameters exceed a set threshold, withdrawing the wafer from the first etching machine.
Step S30, obtaining an etched duration that has been etched, and determining to perform a complementary etching on the wafer when the etched duration is smaller than the process duration.
Step S40, determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, and transferring the wafer to the second etching machine to perform complementary etching according to the complementary etching process.
According to the automatic complementary etching method and the automatic complementary etching device, when the operating parameter in the first etching machine exceeds the set threshold value, the wafer is taken out of the first etching machine; therefore, the wafer is prevented from being placed in the first etching machine for a long time under the condition that the first etching machine cannot recover to operate in a short time, and the problem that the wafer 2 is polluted and scrapped due to the fact that the particles 7 and the polymer 8 fall on the wafer 2 is avoided. The wafer 2 is subjected to complementary etching through a second etching machine, so that the etching is prevented from being influenced, and the working efficiency is ensured; and the accuracy of the complementary etching is ensured by determining the complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine.
The steps of the automatic complementary etching method will be described in detail below.
Step S10, receiving an alarm signal sent by a first etching machine, and terminating the etching of the wafer in the first etching machine.
In this example embodiment, the operating parameters of the first etcher station are monitored in real time, and may include temperature, pressure, current, voltage, etching gas, and the like. The abnormal operation parameter is an abnormal operation of the first etcher, and the abnormal operation of the first etcher may include one or more of a temperature abnormality, a pressure abnormality, a current abnormality, a voltage abnormality, an etching gas abnormality, and the like, that is, there may be only the pressure abnormality and there may be both the pressure and the temperature abnormality. When the first etching machine is abnormal, an alarm signal is sent out, after the alarm signal is received, the first etching machine is controlled to stop running, and the first etching machine naturally stops etching the wafer in the etching cavity after stopping running.
Step S20, receiving the operation parameters in the first etching machine, and when the operation parameters exceed a set threshold, withdrawing the wafer from the first etching machine.
In this example embodiment, after the first etcher stops operating, the operating parameters of the first etcher may include not only temperature, pressure, current, voltage, etching gas, etc., but also an etching process end duration, which is a time duration during which etching stops.
The operating parameter exceeding the set threshold may include one or more of a temperature less than or equal to 90 degrees celsius, a pressure greater than or equal to 5000mTorr, and a process end time greater than or equal to 60 minutes.
For example, the wafer may be removed from the first etcher at a temperature of less than or equal to 90 degrees Celsius, a pressure of greater than or equal to 5000mTorr (millitorr), or a process end time of greater than or equal to 60 minutes. The wafer is also withdrawn from the first etch station at a temperature less than or equal to 90 degrees celsius and a pressure greater than or equal to 5000 mTorr. The wafer is also withdrawn from the first etcher at a pressure greater than or equal to 5000mTorr (millitorr) and a process end time greater than or equal to 60 minutes. Of course, if necessary, the wafer may be withdrawn from the first etching tool under the conditions that the temperature is less than or equal to 90 degrees celsius, the pressure is greater than or equal to 5000mTorr (millitorr), and the process end time is greater than or equal to 60 minutes.
Step S30, obtaining an etched duration that has been etched, and determining to perform a complementary etching on the wafer when the etched duration is smaller than the process duration.
In this example embodiment, the etched duration may be a duration that the wafer has been etched in the first etcher, and the process duration may be a total duration that the wafer needs to be etched in the first etcher. In the case where the length of time that has been etched is less than the total length of time that needs to be etched, it is determined that a supplemental etch is needed for the wafer.
The etched time is equal to the process time, which means that the etching of the wafer is completed and the complementary etching is not needed.
There is also a case where an alarm may be issued when the first etching machine is in an idle state, that is, the first etching machine is not in an operating state, but the complementary etching is not required.
Step S40, determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, and transferring the wafer to the second etching machine to perform complementary etching according to the complementary etching process.
In this example embodiment, the etching parameter of the first etching station may include an etching rate of the first etching station, and the etching parameter of the second etching station may include an etching rate of the second etching station.
Determining a complementary etching process according to the etching duration, the processing duration, the etching parameters of the first etching machine and the etching parameters of the second etching machine, wherein the complementary etching process comprises the following steps:
wherein T2 is the complementary etching duration, T1 is the etched duration, T is the process duration, V1 is the etching rate of the first etching machine, and V2 is the etching rate of the second etching machine;
the supplemental etch process may include a supplemental etch duration, an etch gas, a pressure, a temperature, a current, a voltage, and the like.
The etch gas, pressure, temperature, current, voltage, etc. is generally unchanged, and the second etch station is adjusted according to the etch gas, pressure, temperature, current, voltage, etc. of the first etch station.
In addition, when the second etching machine performs the complementary etching for the first time, the complementary etching process is determined according to the method. When the second etching machine performs the second or third complementary etching, that is, when the second etching machine has performed the complementary etching before the current complementary etching, the complementary etching condition of the previous time or previous times needs to be considered to determine the current complementary etching process. The method comprises the following specific steps:
firstly, data acquisition and storage of the wafer after the compensation etching are carried out.
After the wafer is transferred to a second etching machine to perform the complementary etching according to the complementary etching process, the automatic complementary etching method can further comprise the following steps:
step S100, obtaining the etching depth of the wafer after the complementary etching.
Step S200, calculating a difference between the etching depth and the target etching depth.
Step S300, when the difference value is within the set error range, storing the complementary etching duration, the etching depth, the target etching depth, the etched duration, the processing duration, the etching parameters of the first etching machine and the etching parameters of the second etching machine to a first memory.
Step S400, when the difference exceeds the set error range, storing the complementary etching duration, the etching depth, the target etching depth, the etched duration, the processing duration, the etching parameters of the first etching machine and the etching parameters of the second etching machine to a second memory.
In the present example embodiment, after the completion of the complementary etching of the wafer, the etching depth of the wafer may be measured. The difference between the etch depth and the target etch depth is then calculated. The target etch depth is the desired etch depth of the wafer.
Because the wafer is etched with a certain error, the wafer can be judged to be qualified within the error range, and the wafer can be judged to be unqualified and needs to be scrapped if the error range is exceeded.
When the difference value is within the set error range, the complementary etching duration, the etching depth, the target etching depth, the etched duration, the process duration, the etching parameters of the first etching machine and the etching parameters of the second etching machine are stored in the first memory. Although the wafer after the complementary etching is qualified, a certain error always exists, and in order to enable the subsequent complementary etching to be more accurate, the data is separately stored to provide a basis for the subsequent complementary etching.
When the difference exceeds the set error range, the complementary etching duration, the etching depth, the target etching depth, the etched duration, the process duration, the etching parameters of the first etching machine and the etching parameters of the second etching machine are stored in the second memory. The wafer after the compensation etching is unqualified, and the data is independently stored, so that the errors in the subsequent etching process can be conveniently checked; and the error data are prevented from being used as the basis of the subsequent complementary etching, so that the subsequent complementary etching is prevented from being wrong, and finally the unqualified wafer after the complementary etching is avoided.
And finishing the data acquisition and storage process of the wafer after the complementary etching.
When the second etching machine performs the second or third etching, the previous or multiple etching needs to be considered.
In this exemplary embodiment, before transferring the wafer to the second etching machine for performing the post-etching according to the post-etching process, the automatic post-etching method may further include:
an average or median of the etch depths stored in the first memory is calculated.
If the average value or the median value is larger than the target etching depth, the previous complementary etching time is longer, and the complementary etching time length can be controlled to be reduced so that the etching depth is closer to the target etching depth; if the average or median value is less than the target etch depth, indicating a shorter previous supplemental etch time, the supplemental etch time period can be controlled to increase the etch depth closer to the target etch depth.
In addition, in other exemplary embodiments of the present disclosure, although the second etching machine has a plurality of times of the complementary etching processes, the interval between the previous times of the complementary etching and the current time of the complementary etching is longer, for example, longer than one month; only if the interval time between the last complementary etching and the current complementary etching is short, the data of the previous complementary etching has no great reference value for the current complementary etching due to the change of various conditions, and then before the wafer is transferred to a second etching machine to carry out the complementary etching according to the complementary etching process, the automatic complementary etching method can further comprise the following steps:
the last etch depth stored in the first memory is obtained.
If the etching depth is larger than the target etching depth, the previous compensation etching time is longer, and the compensation etching time can be controlled to be reduced; if the etch depth is less than the target etch depth, indicating a shorter previous supplemental etch time, the supplemental etch time period may be controlled to increase.
It should be noted that, in the second etching machine, there are many times of complementary etching processes, and the interval between the last two, three or more complementary etching processes and the current complementary etching process is short, so that it is necessary to calculate the average value or the median value of the etching depths of the last two, three or more complementary etching processes. If the average value or the median value is larger than the target etching depth, the previous complementary etching time is longer, and the complementary etching time length can be controlled to be reduced so that the etching depth is closer to the target etching depth; if the average or median value is less than the target etch depth, indicating a shorter previous supplemental etch time, the supplemental etch time period can be controlled to increase the etch depth closer to the target etch depth.
In addition, as shown in fig. 4, before the wafer is subjected to the complementary etching, that is, before the wafer is transferred to the second etching machine for the complementary etching according to the complementary etching process, a process of further confirming the calculated complementary etching duration is required, so that the problems that the calculated complementary etching duration is wrong, and the wafer is scrapped due to the complementary etching of the wafer can be avoided. The specific confirmation process is as follows: and when the etching compensation duration exceeds a set range, alarming and adjusting the etching compensation duration. The setting range can be determined according to different etching machines. And alarming to remind the working personnel, so that the working personnel can adjust the etching repairing duration.
Of course, when the etching compensation time is in the set range, the reminding can be carried out, and the etching compensation work can be carried out after the confirmation signal input by the operator is received.
And when the complementary etching duration exceeds the set range, storing the operating parameters, the etched duration and the process duration corresponding to the complementary etching duration into a third memory. The data is stored separately, which facilitates the subsequent check of which errors exist in the etching process.
It should be noted that although the various steps of the automated post-etch method of the present disclosure are depicted in the drawings in a particular order, this does not require or imply that the steps must be performed in this particular order, or that all of the depicted steps must be performed, to achieve the desired results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step execution, and/or one step broken down into multiple step executions, etc.
Further, the embodiment of the present disclosure provides an automatic complementary etching apparatus, which, as shown in fig. 5, may include a first receiving assembly 3, a second receiving assembly 4, a determining assembly 5, and a control assembly 6; the first receiving component 3 can be used for receiving an alarm signal sent by the first etching machine to stop etching the wafer in the first etching machine; the second receiving component 4 may be configured to receive an operation parameter in the first etching machine, and exit the wafer from the first etching machine when the operation parameter exceeds a set threshold; the determining component 5 may be configured to obtain an etched duration that has been etched, and determine to perform a complementary etching on the wafer when the etched duration is smaller than the process duration; the control component 6 can be used for determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, and transferring the wafer to the second etching machine to perform complementary etching according to the complementary etching process.
In some example embodiments of the present disclosure, the etching parameter of the first etching station includes an etching rate of the first etching station, the etching parameter of the second etching station includes an etching rate of the second etching station, and the complementary etching process includes the complementary etching duration.
In some example embodiments of the present disclosure, the automatic post-etch apparatus may further include a first acquisition component, a first computation component, a first memory, and a second memory; the first acquiring component can be used for acquiring the etching depth of the wafer after the complementary etching; the first calculation component may be for calculating a difference between the etch depth and a target etch depth; the first memory can be used for storing the complementary etching duration, the etching depth, the target etching depth, the etched duration, the process duration, the etching parameter of the first etching machine and the etching parameter of the second etching machine corresponding to the difference value within a set error range; the second memory may be configured to store the etching compensation duration, the etching depth, the target etching depth, the etched duration, the process duration, the etching parameter of the first etching machine, and the etching parameter of the second etching machine corresponding to the difference exceeding the set error range.
In some example embodiments of the present disclosure, the automatic post-etch apparatus further comprises a second calculation component and an adjustment component; a second calculation component may be used to calculate an average or median of the etch depths stored in the first memory; the adjusting component may be configured to adjust the decrease in the supplemental etch time period when the average or median is greater than the target etch depth; adjusting to increase the supplemental etch time period when the average or median is less than the target etch depth.
In some example embodiments of the present disclosure, the automatic post-etch apparatus further comprises a second acquisition component and an adjustment component; a second capture component may be used to capture the last stored etch depth stored in the first memory; the adjusting component can be used for adjusting and reducing the complementary etching time length when the etching depth is larger than the target etching depth; adjusting to increase the supplemental etch time period when the etch depth is less than the target etch depth.
In some example embodiments of the present disclosure, the automatic post-etch apparatus further comprises an alarm component; the alarm component can be used for alarming when the etching supplementing duration exceeds a set range.
In some example embodiments of the present disclosure, the automatic complementary etching apparatus further includes a third memory, and the third memory may be configured to store the operating parameter, the etched duration, and the process duration corresponding to the complementary etching duration to the third memory when the complementary etching duration exceeds a set range.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (12)
1. An automatic complementary etching method, comprising:
receiving an alarm signal sent by a first etching machine, and stopping etching the wafer in the first etching machine;
receiving an operation parameter in the first etching machine, and when the operation parameter exceeds a set threshold value, withdrawing the wafer from the first etching machine;
obtaining the etched time length of etching, and determining to perform complementary etching on the wafer when the etched time length is less than the process time length;
determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, and transferring the wafer to the second etching machine to perform complementary etching according to the complementary etching process; the etching parameters of the first etching machine comprise the etching rate of the first etching machine, the etching parameters of the second etching machine comprise the etching rate of the second etching machine, and the complementary etching process comprises the complementary etching duration;
obtaining the etching depth of the wafer after the complementary etching;
calculating the difference between the etching depth and the target etching depth;
when the difference value is within a set error range, storing the complementary etching time length, the etching depth, the target etching depth, the etched time length, the process time length, the etching parameter of the first etching machine and the etching parameter of the second etching machine to a first memory;
when the difference value exceeds the set error range, storing the complementary etching time length, the etching depth, the target etching depth, the etched time length, the process time length, the etching parameter of the first etching machine and the etching parameter of the second etching machine to a second memory;
determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, wherein the method comprises the following steps:
wherein T2 is a complementary etching duration, T1 is the etched duration, T is the process duration, V1 is the etching rate of the first etching machine, and V2 is the etching rate of the second etching machine.
2. The method of claim 1, wherein the operating parameters include one or more of temperature, pressure, and etch process end time.
3. The automated post-etch method of claim 2, wherein the operating parameter exceeds a set threshold comprising:
the temperature is less than or equal to 90 degrees Celsius, the pressure is greater than or equal to 5000mTorr, and the process end time is greater than or equal to one or more of 60 minutes.
4. The automatic etch-compensating method of claim 1, wherein before transferring the wafer to the second etching machine for a compensation etch according to the compensation etch process, the automatic etch-compensating method further comprises:
calculating an average or median of the etch depths stored in the first memory;
if the average value or the median is greater than the target etching depth, reducing the complementary etching time length; if the average or median is less than the target etch depth, increasing the length of the supplemental etch.
5. The automatic complementary etching method as claimed in claim 1, wherein before transferring the wafer to the second etching machine for complementary etching according to the complementary etching process, the automatic complementary etching method further comprises:
acquiring the etching depth of the latest time stored in the first memory;
if the etching depth is larger than the target etching depth, reducing the complementary etching time length; if the etch depth is less than the target etch depth, increasing the length of the supplemental etch.
6. The automatic etch-compensating method of claim 1, wherein before transferring the wafer to the second etching machine for a compensation etch according to the compensation etch process, the automatic etch-compensating method further comprises:
and when the etching supplementing duration exceeds a set range, alarming and adjusting the etching supplementing duration.
7. The automatic complementary etching method of claim 6, wherein when the complementary etching duration exceeds a set range, the operating parameter, the etched duration and the process duration corresponding to the complementary etching duration are stored in a third memory.
8. An automatic post-etching apparatus, comprising:
the first receiving assembly is used for receiving an alarm signal sent by a first etching machine and stopping etching the wafer in the first etching machine;
the second receiving component is used for receiving the operating parameters in the first etching machine, and when the operating parameters exceed a set threshold value, the wafer is withdrawn from the first etching machine;
the determining component is used for acquiring the etched time length after etching is carried out, and determining to carry out complementary etching on the wafer when the etched time length is smaller than the process time length;
the control component is used for determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, and transferring the wafer to the second etching machine to perform complementary etching according to the complementary etching process; the etching parameters of the first etching machine comprise the etching rate of the first etching machine, the etching parameters of the second etching machine comprise the etching rate of the second etching machine, and the complementary etching process comprises the complementary etching duration;
the first acquisition assembly is used for acquiring the etching depth of the wafer after the complementary etching;
a first calculation component for calculating a difference between the etch depth and a target etch depth;
the first memory is used for storing the complementary etching duration, the etching depth, the target etching depth, the etched duration, the processing duration, the etching parameter of the first etching machine and the etching parameter of the second etching machine corresponding to the difference value within a set error range;
a second memory, configured to store the etching duration, the etching depth, the target etching depth, the etched duration, the process duration, the etching parameter of the first etching machine, and the etching parameter of the second etching machine corresponding to the difference exceeding the set error range;
determining a complementary etching process according to the etched time length, the process time length, the etching parameters of the first etching machine and the etching parameters of the second etching machine, wherein the method comprises the following steps:
wherein T2 is a complementary etching duration, T1 is the etched duration, T is the process duration, V1 is the etching rate of the first etching machine, and V2 is the etching rate of the second etching machine.
9. The automatic post-etch apparatus of claim 8, further comprising:
a second calculation component for calculating an average or median of the etch depths stored in the first memory;
an adjustment component for adjusting to reduce the complementary etching time length when the average value or the median is greater than the target etching depth; adjusting to increase the supplemental etch time period when the average or median is less than the target etch depth.
10. The automatic post-etch apparatus of claim 8, further comprising:
a second obtaining component for obtaining the last etching depth stored in the first memory;
the adjusting component is used for adjusting and reducing the complementary etching time length when the etching depth is larger than the target etching depth; adjusting to increase the supplemental etch time period when the etch depth is less than the target etch depth.
11. The automatic post-etch apparatus of claim 8, further comprising:
and the alarm component is used for alarming when the etching repairing duration exceeds a set range.
12. The automatic supplemental etching apparatus according to claim 11, further comprising:
and the third memory is used for storing the operating parameters, the etched duration and the process duration corresponding to the etching supplementing duration into the third memory when the etching supplementing duration exceeds a set range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110500757.7A CN113223955B (en) | 2021-05-08 | 2021-05-08 | Automatic complementary etching method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110500757.7A CN113223955B (en) | 2021-05-08 | 2021-05-08 | Automatic complementary etching method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113223955A CN113223955A (en) | 2021-08-06 |
| CN113223955B true CN113223955B (en) | 2022-05-27 |
Family
ID=77094038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110500757.7A Active CN113223955B (en) | 2021-05-08 | 2021-05-08 | Automatic complementary etching method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113223955B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117410215B (en) * | 2023-12-15 | 2024-04-09 | 合肥晶合集成电路股份有限公司 | Method for determining machine parameters, control method, control system and device thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010094276A (en) * | 2000-04-06 | 2001-10-31 | 윤종용 | control system for compensating etch amount of semiconductor wafer |
| US6468388B1 (en) * | 2000-08-11 | 2002-10-22 | Applied Materials, Inc. | Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate |
| US6494986B1 (en) * | 2000-08-11 | 2002-12-17 | Applied Materials, Inc. | Externally excited multiple torroidal plasma source |
| TW550700B (en) * | 2002-08-16 | 2003-09-01 | Taiwan Semiconductor Mfg | Monitoring and compensating etching method of semiconductor etching machine and its computer-readable recording medium |
| TW200701314A (en) * | 2005-06-22 | 2007-01-01 | United Microelectronics Corp | Method of processing semiconductor wafer |
| CN101331092A (en) * | 2005-12-16 | 2008-12-24 | 朗姆研究公司 | Notch stop pulsing process for plasma processing system |
| CN101834128A (en) * | 2009-03-12 | 2010-09-15 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN104008957A (en) * | 2013-02-22 | 2014-08-27 | 中微半导体设备(上海)有限公司 | Substrate compensation etching method |
| CN111211044A (en) * | 2018-11-22 | 2020-05-29 | 三星电子株式会社 | Apparatus and method for processing substrate, and method for manufacturing semiconductor device using the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6861362B2 (en) * | 2001-06-29 | 2005-03-01 | Lam Research Corporation | Self-aligned contact process implementing bias compensation etch endpoint detection and methods for implementing the same |
| US7674350B2 (en) * | 2007-01-22 | 2010-03-09 | Infineon Technologies Ag | Feature dimension control in a manufacturing process |
-
2021
- 2021-05-08 CN CN202110500757.7A patent/CN113223955B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010094276A (en) * | 2000-04-06 | 2001-10-31 | 윤종용 | control system for compensating etch amount of semiconductor wafer |
| US6468388B1 (en) * | 2000-08-11 | 2002-10-22 | Applied Materials, Inc. | Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate |
| US6494986B1 (en) * | 2000-08-11 | 2002-12-17 | Applied Materials, Inc. | Externally excited multiple torroidal plasma source |
| TW550700B (en) * | 2002-08-16 | 2003-09-01 | Taiwan Semiconductor Mfg | Monitoring and compensating etching method of semiconductor etching machine and its computer-readable recording medium |
| TW200701314A (en) * | 2005-06-22 | 2007-01-01 | United Microelectronics Corp | Method of processing semiconductor wafer |
| CN101331092A (en) * | 2005-12-16 | 2008-12-24 | 朗姆研究公司 | Notch stop pulsing process for plasma processing system |
| CN101834128A (en) * | 2009-03-12 | 2010-09-15 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN104008957A (en) * | 2013-02-22 | 2014-08-27 | 中微半导体设备(上海)有限公司 | Substrate compensation etching method |
| CN111211044A (en) * | 2018-11-22 | 2020-05-29 | 三星电子株式会社 | Apparatus and method for processing substrate, and method for manufacturing semiconductor device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113223955A (en) | 2021-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11614728B2 (en) | Machine tool management system that obtains a next maintenance period from a maintenance period model and a refinement algorithm | |
| US6248602B1 (en) | Method and apparatus for automated rework within run-to-run control semiconductor manufacturing | |
| KR100727048B1 (en) | Process control system | |
| KR101417701B1 (en) | Abnormality determination system of processing device and abnormality determination method of same | |
| DE10394223B4 (en) | Setting a sampling rate based on state estimation results | |
| EP1208592A1 (en) | Method and apparatus for run-to-run controlling of overlay registration | |
| US11249458B2 (en) | Controller and control system | |
| US20200089191A1 (en) | Method for monitoring cutting-tool abrasion | |
| US6954883B1 (en) | Method and apparatus for performing fault detection using data from a database | |
| CN113223955B (en) | Automatic complementary etching method and device | |
| WO2004049072A2 (en) | Method and apparatus for overlay control using multiple targets | |
| CN113994375A (en) | Metrology for asymmetric wafer shape characterization | |
| US7236848B2 (en) | Data representation relating to a non-sampled workpiece | |
| KR20140032087A (en) | Maintenance method for semiconductor production line | |
| CN100498603C (en) | Automatic methods and systems for manufacturing recipe feedback control | |
| US20100233830A1 (en) | Method for monitoring fabrication parameter | |
| US10146215B2 (en) | Monitor system and method for semiconductor processes | |
| CN107831638B (en) | Method for detecting pollution of contact surface of mask and mask table | |
| CN111640694B (en) | Calibration and monitoring method of wafer loading system and wafer loading system | |
| EP1235109A1 (en) | Method for exposing at least one or at least two semiconductor wafers | |
| CN111774929B (en) | Tool wear compensation method, tool wear compensation device, computer device, and storage medium | |
| US6988225B1 (en) | Verifying a fault detection result based on a process control state | |
| CN108885407A (en) | It is superimposed variance stabilizing method and system | |
| CN117075439A (en) | Overlay monitoring and intervention method and device, storage medium and lithography equipment | |
| US5496592A (en) | Method and apparatus for controlling ion implantation unit for early detection of ion implantation error |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |