CN113207205B - Microwave protection circuit based on transient voltage suppressor - Google Patents
Microwave protection circuit based on transient voltage suppressor Download PDFInfo
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- CN113207205B CN113207205B CN202110395964.0A CN202110395964A CN113207205B CN 113207205 B CN113207205 B CN 113207205B CN 202110395964 A CN202110395964 A CN 202110395964A CN 113207205 B CN113207205 B CN 113207205B
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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Abstract
The invention provides a microwave protection circuit based on a transient voltage suppressor, which comprises a first protection circuit and a second protection circuit, wherein the first protection circuit and the second protection circuit are the combination of the transient voltage suppressor. The invention combines two transient voltage suppressors, and utilizes the characteristic that the resistance is rapidly reduced when the transient voltage suppressors are impacted by strong electromagnetic pulses, thereby absorbing large current to protect a subsequent circuit and ensuring that a subsequent device is prevented from being damaged by the impact of transient high energy; the invention utilizes the circuit models of two transient voltage suppressors, obtains the high-frequency characteristics of the transient voltage suppressor diodes under different frequencies through simulation, obtains the relation between the dynamic resistance and the input power of the transient voltage suppressor diodes, and obtains the ratio of the absorption current, thereby obviously improving the power threshold of the protected device.
Description
Technical Field
The invention relates to the technical field of radio frequency front-end device protection and strong electromagnetic pulse, in particular to a microwave protection circuit based on a transient voltage suppressor.
Background
With the rapid development of electronic technology and the continuous improvement of informatization degree, the electromagnetic environment faced by various electronic devices is more and more complex, and a corresponding protective measure is urgently needed. The electromagnetic environment is the sum of all electromagnetic phenomena existing in a space, in which various electromagnetic pulses generated in the nature and human society can pose serious threats to information security, such as lightning, electrostatic discharge, nuclear electromagnetic pulses, and high-power microwave radiation. Electromagnetic pulses such as lightning, electrostatic induction and high-power microwaves can be coupled into an electronic information system through an antenna, a cable, an interface and equipment pores to generate transient overvoltage, so that normal work of the system is influenced and even the system is damaged. The frequency range of the high-power microwave is very wide, 300MHz-300GHz, the pulse peak power is not lower than 100MW, even up to GW magnitude, the pulse time is between tens ns and hundreds ns, and the high-power microwave has strong harmfulness to an electronic system. Therefore, a technical solution is needed to improve the above technical problems.
Disclosure of Invention
In view of the defects in the prior art, the present invention aims to provide a microwave protection circuit based on a transient voltage suppressor.
The microwave protection circuit based on the transient voltage suppressor comprises a first protection circuit and a second protection circuit, wherein the first protection circuit and the second protection circuit are a combination of the transient voltage suppressor.
Preferably, the combination of the transient voltage suppressors comprises the type, the number and the access position of the protection circuit.
Preferably, the transient voltage suppressor of the first protection circuit is ESD105-B1-02 ELS; the model of the transient voltage suppressor of the second protection circuit is ESD108-B1-CSP 0201.
Preferably, the first protection circuit includes a plurality of TVS diodes.
Preferably, the TVS diode includes five TVS diodes model ESD105-B1-02ELS and two TVS diodes model ESD108-B1-CSP 0201.
Preferably, the first protection circuit comprises six branches, wherein the first branch comprises two TVS diodes, the first TVS diode is ESD105-B1-02ELS, and the second TVS diode is ESD108-B1-CSP 0201; the second to fifth branches comprise a TVS diode ESD105-B1-02 ELS; the sixth branch comprises a TVS diode ESD108-B1-CSP 0201.
Preferably, the second protection circuit includes a plurality of TVS diodes.
Preferably, the second protection circuit comprises three TVS diodes of model ESD105-B1-02ELS and three TVS diodes of model ESD108-B1-CSP 0201.
Preferably, the second protection circuit comprises three branches, wherein the first branch comprises four TVS diodes and is divided into two parts from top to bottom, the first part is formed by connecting a TVS diode ESD105-B1-02ELS with the TVS diode ESD105-B1-02ELS and the TVS diode ESD108-B1-CSP0201 in parallel, the second part comprises a TVS diode ESD108-B1-CSP0201, and the first part is connected with the second part in series; the second branch comprises a TVS diode ESD105-B1-02 ELS; the third branch comprises a TVS diode ESD108-B1-CSP 0201.
Preferably, one end of the first protection circuit and one end of the second protection circuit are connected to the input end of the protected device, and the other end of the first protection circuit and the other end of the second protection circuit are grounded.
Compared with the prior art, the invention has the following beneficial effects:
1. the protection circuit has small occupied volume, low cost, high response speed, nanosecond-level response time and good protection effect;
2. the protection effect under the actual condition is obtained by testing the protection circuit under the HPM pulse;
3. when the input power of the HPM pulse is 50-62.5 dBm, the highest protection ratio of the circuit can reach 20 dB;
4. the invention combines two transient voltage suppressors, and utilizes the characteristic that the resistance is rapidly reduced when the transient voltage suppressors are impacted by strong electromagnetic pulses, thereby absorbing large current to protect a subsequent circuit and ensuring that a subsequent device is prevented from being damaged by the impact of transient high energy;
5. the invention utilizes the circuit models of two transient voltage suppressors, obtains the high-frequency characteristics of the transient voltage suppressor diodes under different frequencies through simulation, obtains the relation between the dynamic resistance and the input power of the transient voltage suppressor diodes, and obtains the ratio of the absorption current, thereby obviously improving the power threshold of the protected device.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic circuit diagram of a TVS diode ESD105-B1-02ELS according to the present invention;
FIG. 2 is a schematic circuit diagram of a TVS diode ESD108-B1-CSP0201 according to the present invention;
FIG. 3 is a block diagram of two high power microwave protection circuits according to the present invention;
FIG. 4 is a diagram showing the variation of the dynamic resistance and the shunt ratio of two high-power microwave protection circuits according to the present invention with the increase of the power of the injected high-power microwave pulse;
fig. 5 is a graph showing the protection effect of two high-power microwave protection circuits as the power of the injected high-power microwave pulse increases.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
FIG. 1 shows a schematic circuit diagram of a TVS diode ESD105-B1-02 ELS. The inside of the model comprises a symmetrical structure, and the left half part of the symmetrical structure comprises 5 equivalent diodes Dhc, Df, Dz, Ds and Dt, an equivalent capacitor C1 and an equivalent resistor R1. The left half part of the symmetrical structure comprises three branches, the first branch is formed by an equivalent diode Dhc, the cathode of the equivalent diode Dz in the second branch is connected with an equivalent capacitor C1, the anode of the equivalent diode Dt is connected with an equivalent resistor R1, the two branches are connected in parallel and then connected with the anode of the equivalent diode Ds, and the third branch is formed by an equivalent diode Df. The anodes of the equivalent diodes Dhc and Df are connected with the right half part of the symmetrical structure, the cathodes of the equivalent diodes Dhc and Df are connected with the equivalent inductor L, the other end of the equivalent inductor L is connected with the equivalent capacitor C3, and the other end of the equivalent capacitor C3 is connected with the cathodes of the equivalent diodes Dhc and Df in the right half part of the symmetrical structure.
FIG. 2 shows a schematic circuit diagram of a TVS diode ESD108-B1-CSP0201 with a precise circuit model. The model can be regarded as a symmetrical structure, and the left half part of the symmetrical structure comprises 5 equivalent diodes Dhc, Df, Dz, Ds and Dt, 3 equivalent capacitors C1, C2 and Cp, two equivalent resistors R1 and R2 and an equivalent inductor Ls. The equivalent diode Dhc is connected in parallel with Df, and has an anode connected to the anode of the equivalent diode Ds and a cathode connected to the anode of the equivalent diode Dt and the cathode of Dz. The equivalent diode Dt is connected in series with the equivalent capacitors C1 and C2, and the equivalent diode Dz is connected in series with the equivalent resistors R1 and R2. One end of the equivalent inductor Ls is connected with the equivalent capacitor C1, the equivalent resistor R1 and the cathode of the equivalent diode Ds, the other end of the equivalent inductor Ls is connected with the equivalent capacitor Cp, and the other end of the equivalent capacitor Cp is connected with the cathodes of the equivalent diodes Dhc and Df in the right half part of the model.
Fig. 3 shows the structure of two high-power microwave protection circuits. The first protection circuit comprises 7 TVS diodes in total, wherein 5 TVS diodes ESD105-B1-02ELS and 2 TVS diodes ESD108-B1-CSP 0201. The first protection circuit is composed of 6 branches, wherein the first branch on the left comprises two TVS diodes, the first TVS diode ESD105-B1-02ELS is from top to bottom, and the second TVS diode ESD108-B1-CSP0201 is; the second to fifth branches are formed by a TVS diode ESD105-B1-02 ELS; the sixth branch is formed by a TVS diode ESD108-B1-CSP 0201.
The second protection circuit comprises 6 TVS diodes in total, wherein 3 TVS diodes ESD105-B1-02ELS and 3 TVS diodes ESD108-B1-CSP 0201. The second protection circuit is composed of 3 branches, wherein the first branch on the left comprises 4 TVS diodes and can be divided into two parts from top to bottom, the first part is formed by connecting a TVS diode ESD105-B1-02ELS with a TVS diode ESD105-B1-02ELS and a TVS diode ESD108-B1-CSP0201 in parallel, the second part is formed by connecting a TVS diode ESD108-B1-CSP0201 in series, and the first part and the second part are connected in series; the second branch is formed by a TVS diode ESD105-B1-02 ELS; the third branch is formed by a TVS diode ESD108-B1-CSP 0201.
Fig. 4 is a graph showing the variation of the dynamic resistance and the shunt ratio of two high-power microwave protection circuits with the increase of the power of the injected high-power microwave pulse. The change trends of the dynamic resistors of the two protection circuits are similar on the whole, the dynamic resistors are in a state of high resistance value when the injection power is low, the dynamic resistors are rapidly reduced after the power value is increased to a certain degree, and then the reduction trend is slowed down and finally approaches to a certain value. When the injected power is 25dBm, the dynamic resistance of the first protection circuit is 17.76 ohms and the dynamic resistance of the second protection circuit is 31.22 ohms. This is because the injection power value is small at this time, the resistance of the TVS diode is large, the resistance of the TVS transistor ESD105-B1-02ELS in the five circuits is about 100 to 150 ohms, the resistance of the TVS transistor ESD108-B1-CSP0201 is about 30 to 60 ohms, and the influence of the connection mode of the circuits on the resistance is the dominant factor. The second protection circuit has fewer branches than the first protection circuit, so the resistance of the second protection circuit is larger than that of the first protection circuit. And when the injected power reaches about 30dBm, the resistance of the second protection circuit drops rapidly, and the dynamic resistance of the first protection circuit is reduced significantly when the injected power reaches 35 dBm. This is because the branch of the second protection circuit is the least, the branch where a single TVS diode is located shares more power than the TVS diode at a similar position in the first protection circuit, and the resistance decreases faster with the increase of the injected power, pulling down the resistance of the second protection circuit quickly. When the injection power is between 50 dBm and 65dBm, the resistance value of the first protection circuit is between 0.495 ohm and 1.001 ohm, and the resistance value of the second protection circuit is between 0.769 ohm and 2.23 ohm. The lower the resistance value of the high-power microwave protection circuit is, the larger the current absorbed by the circuit is, the corresponding shunt proportion is increased, and the protection effect on subsequent circuit components is better.
Fig. 5 is a graph showing the protection effect of two high-power microwave protection circuits according to the increase of the power of the injected high-power microwave pulse. It can be seen from the figure that when the injection power value is between 50-65dBm required by the protection, the threshold power boosting effect of the first protection circuit can reach 17-20dB, and the threshold power boosting effect of the second protection circuit can reach 14-18 dB. And the protection effect of the two protection circuits is improved along with the increase of the injection power, the cost performance is extremely high, and the high-power microwave protection circuit is beneficial to further protection of high-power microwaves.
The protection circuit has the advantages of small occupied volume, low cost, high response speed, nanosecond-level response time and good protection effect; the protection effect under the actual condition is obtained by testing the protection circuit under the HPM pulse; when the input power of the HPM pulse is 50-62.5 dBm, the highest protection ratio of the circuit can reach 20 dB.
The invention combines two transient voltage suppressors, and utilizes the characteristic that the resistance is rapidly reduced when the transient voltage suppressors are impacted by strong electromagnetic pulses, thereby absorbing large current to protect a subsequent circuit and ensuring that a subsequent device is prevented from being damaged by the impact of transient high energy; by utilizing circuit models of two transient voltage suppressors, the high-frequency characteristics of the transient voltage suppressor diodes under different frequencies are obtained through simulation, the relation between the dynamic resistance and the input power of the transient voltage suppressor diodes is obtained, and the ratio of the absorption current is obtained, so that the power threshold of a protected device is remarkably improved.
Those skilled in the art will appreciate that, in addition to implementing the system and its various devices, modules, units provided by the present invention as pure computer readable program code, the system and its various devices, modules, units provided by the present invention can be fully implemented by logically programming method steps in the form of logic gates, switches, application specific integrated circuits, programmable logic controllers, embedded microcontrollers and the like. Therefore, the system and various devices, modules and units thereof provided by the invention can be regarded as a hardware component, and the devices, modules and units included in the system for realizing various functions can also be regarded as structures in the hardware component; means, modules, units for performing the various functions may also be regarded as structures within both software modules and hardware components for performing the method.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (6)
1. A microwave protection circuit based on a transient voltage suppressor is characterized by comprising a first protection circuit and a second protection circuit, wherein the first protection circuit and the second protection circuit are a combination of the transient voltage suppressor;
the first protection circuit comprises six branches, wherein the first branch comprises two TVS diodes connected in series, the first TVS diode is ESD105-B1-02ELS, and the second TVS diode is ESD108-B1-CSP 0201; the second to fifth branches comprise a TVS diode ESD105-B1-02 ELS; the sixth branch comprises a TVS diode ESD108-B1-CSP 0201;
the second protection circuit comprises three branches, wherein the first branch comprises four TVS diodes which are divided into two parts from top to bottom, the first part is formed by connecting a TVS diode ESD105-B1-02ELS and a TVS diode ESD108-B1-CSP0201 in series and then connecting the TVS diode ESD105-B1-02ELS in parallel, the second part comprises a TVS diode ESD108-B1-CSP0201, and the first part and the second part are connected in series; the second branch comprises a TVS diode ESD105-B1-02 ELS; the third branch comprises a TVS diode ESD108-B1-CSP 0201;
one end of the first protection circuit and one end of the second protection circuit are connected to the input end of the protected device, and the other end of the first protection circuit and the other end of the second protection circuit are grounded.
2. The transient voltage suppressor-based microwave protection circuit of claim 1, wherein the transient voltage suppressor is combined in a manner comprising a type, a number, and an access location of the protection circuit.
3. The transient voltage suppressor-based microwave protection circuit of claim 1, wherein said first protection circuit comprises a plurality of TVS diodes.
4. The transient voltage suppressor-based microwave protection circuit of claim 3, wherein said first protection circuit comprises five TVS diodes model ESD105-B1-02ELS and two TVS diodes model ESD108-B1-CSP 0201.
5. The transient voltage suppressor-based microwave protection circuit of claim 1, wherein said second protection circuit comprises a plurality of TVS diodes.
6. The transient voltage suppressor-based microwave protection circuit of claim 5, wherein said second protection circuit comprises three TVS diodes model ESD105-B1-02ELS and three TVS diodes model ESD108-B1-CSP 0201.
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| CN202110395964.0A CN113207205B (en) | 2021-04-13 | 2021-04-13 | Microwave protection circuit based on transient voltage suppressor |
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| CN202110395964.0A CN113207205B (en) | 2021-04-13 | 2021-04-13 | Microwave protection circuit based on transient voltage suppressor |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186481A (en) * | 2015-10-14 | 2015-12-23 | 华东光电集成器件研究所 | Static leakage circuit for voltage control end of microwave solid control circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN200941656Y (en) * | 2006-08-14 | 2007-08-29 | 海信集团有限公司 | ESD protecting circuit and TV set having the same |
| CN201328145Y (en) * | 2008-10-07 | 2009-10-14 | 成都飞机工业集团电子科技有限公司 | Transient interference suppressor |
| CN101938119B (en) * | 2009-06-30 | 2014-01-15 | 万国半导体股份有限公司 | Transient voltage suppressor (TVS) with improved clamping voltage |
| CN202495749U (en) * | 2011-12-21 | 2012-10-17 | 铜陵浩岩节能科技有限公司 | Power source protection circuit |
| CN203774778U (en) * | 2014-01-08 | 2014-08-13 | 成都新欣神风电子科技有限公司 | Transient interference-suppressing protection circuit |
| CN105186478B (en) * | 2015-08-20 | 2018-03-30 | 北京燕东微电子有限公司 | Transient Voltage Suppressor |
| US10090672B2 (en) * | 2015-12-02 | 2018-10-02 | Hamilton Sundstrand Corporation | Shared transient voltage suppressor having built-in-test capability for solid state power controllers |
| CN205304235U (en) * | 2015-12-15 | 2016-06-08 | 辽宁通银沐源网络金融服务股份有限公司 | A circuit for POS machine lightning protection |
| CN211405467U (en) * | 2019-11-26 | 2020-09-01 | 南京国电南自电网自动化有限公司 | Electric power direct current signal acquisition return circuit protection circuit |
| CN112838574A (en) * | 2020-12-01 | 2021-05-25 | 东风越野车有限公司 | Anti-electromagnetic interference vehicle-mounted controller circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186481A (en) * | 2015-10-14 | 2015-12-23 | 华东光电集成器件研究所 | Static leakage circuit for voltage control end of microwave solid control circuit |
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