CN113204259B - APD bias voltage module with temperature compensation function - Google Patents

APD bias voltage module with temperature compensation function Download PDF

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Publication number
CN113204259B
CN113204259B CN202110467707.3A CN202110467707A CN113204259B CN 113204259 B CN113204259 B CN 113204259B CN 202110467707 A CN202110467707 A CN 202110467707A CN 113204259 B CN113204259 B CN 113204259B
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resistor
capacitor
bias voltage
diode
temperature compensation
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CN113204259A (en
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李松
向雨琰
伍煜
郭守罡
马跃
周辉
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Wuhan University WHU
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The invention relates to an APD bias voltage technology, in particular to an APD bias voltage module with a temperature compensation function, which comprises inversion boosters connected in sequenceThe device comprises a voltage part, a multi-stage filtering full-wave rectification part, a bias voltage setting part and a temperature compensation part; the inversion boosting part comprises a power supply filter circuit, and a third resistor R3, a positive feedback oscillation circuit, an LC frequency selection circuit and a third capacitor C3 which are sequentially connected with the power supply filter circuit; the multistage filtering full-wave rectification part comprises a first stage full-wave rectification circuit and a second stage rectification circuit connected with the first stage full-wave rectification circuit; the bias voltage setting and temperature compensating section includes an operational amplifier U1AA negative feedback voltage regulating circuit, a standard voltage source Uc and an analog temperature sensor U connected with the sameT. The module has the advantages of low power consumption, small volume and independent operation of the computing resources independent of the digital chip.

Description

APD bias voltage module with temperature compensation function
Technical Field
The invention belongs to the technical field of APD bias voltage, and particularly relates to an APD bias voltage module with a temperature compensation function.
Background
Avalanche photo-diodes (APDs) have high gain, small volume and low power consumption, and are widely applied to various laser detection devices, but the APDs need extremely high bias voltage when working normally, and the higher the bias voltage of the APDs is, the higher the photoelectric gain of the APDs is on the premise that the APDs are not broken down. Meanwhile, the gain of the APD is very susceptible to temperature and power supply ripples, and the stability of the APD gain is affected by temperature changes and overlarge power supply ripples, so that the accuracy of laser energy detection is affected. Therefore, the APD bias voltage module is required to have small power supply ripple and can compensate the temperature of the APD.
Currently, the existing methods for generating the APD bias voltage include:
(1) switching power supply boost method: this is the most easily implemented method, which is the most widely used method at present, but because the APD bias voltage is high, in the order of hundreds of volts, a certain number of voltage multiplication circuits are required to be added to the switching power supply, and switching noise is introduced into each stage of the switching power supply. This solution is not only noisy. And the circuit is large in size and high in power consumption, and is not suitable for small-size application.
(2) Inverter combined transformer step-up method: the direct-current voltage is converted into high-frequency alternating current through the inverter, then the high-frequency alternating current is boosted through the high-frequency transformer, and due to the fact that the transformer does not have a switching process during operation, any switching noise cannot be generated. However, in this scheme, since the step-up ratio of the transformer is a fixed value, the voltage amplification factor cannot be changed, and the APD bias voltage cannot be controlled.
Currently, the existing APD temperature compensation methods include:
(1) a semiconductor refrigeration piece constant temperature method: the semiconductor refrigeration piece is used for carrying out constant temperature control on the APD, the method can simply and effectively avoid the influence of temperature change on the gain of the APD, but the power consumption of the semiconductor refrigeration piece is extremely high, so that the scheme is only suitable for large-scale laser detection equipment.
(2) Bias voltage numerical control method: the APD has different gains under different bias voltages, so that the temperature drift can be compensated by setting different bias voltages for the APD under different temperatures.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides an APD bias voltage module which has low power consumption, small volume, no dependence on a digital chip and a temperature compensation function.
In order to solve the technical problems, the invention adopts the following technical scheme: an APD bias voltage module with a temperature compensation function comprises an inversion boosting part, a multi-stage filtering full-wave rectification part, a bias voltage setting part and a temperature compensation part which are sequentially connected; the inversion boosting part comprises a power supply filter circuit, and a third resistor R3, a positive feedback oscillation circuit, an LC frequency selection circuit and a third capacitor C3 which are sequentially connected with the power supply filter circuit; the multistage filtering full-wave rectification part comprises a first stage full-wave rectification circuit and a second stage rectification circuit connected with the first stage full-wave rectification circuit; the bias voltage setting and temperature compensating section includes an operational amplifier U1ANegative feedback voltage regulating circuit, standard voltage source Uc and analog connected with itTemperature sensor UT。
In the APD bias voltage module with the temperature compensation function, the power filter circuit includes a filter circuit composed of a first resistor R1, a first inductor L1, a first capacitor C1 and a second capacitor C2, and the filter circuit is connected to a third resistor R3;
the positive feedback oscillation loop comprises a first triode Q1, a second triode Q2, a high-frequency transformer T1, a transformer primary coil L2 and a transformer feedback coil L3; two ends of a third capacitor C3 are respectively connected with collectors of a first triode Q1 and a second triode Q2 and then connected with two ends of a primary coil L2 of the transformer, a third resistor R3 is connected in series with the base of a first triode Q1 and the middle projection head of the primary coil L2 of the transformer, emitters of the first triode Q1 and the second triode Q2 are grounded, one end of a feedback coil L3 of the transformer is connected with the base of the first triode Q1, and the other end of the feedback coil L3 of the transformer is connected with the base of a second triode Q2;
the LC frequency-selecting circuit comprises a transformer secondary coil L4 and a fourth capacitor C4 which are connected in parallel and then grounded.
In the APD bias voltage module with the temperature compensation function, the first-stage full-wave rectification circuit includes a high-frequency full-wave rectification circuit composed of a first diode D1, a second diode D2, a third diode D3 and a fourth diode D4, a fifth capacitor C5, a fourth resistor R4 and a fifth resistor R5, the high-frequency full-wave rectification circuit is respectively connected with two ends of the secondary coil L4 of the transformer and two ends of the fifth capacitor C5, and two ends of the fifth capacitor C5 are also respectively connected with one ends of the fourth resistor R4 and one end of the fifth resistor R5;
the second-stage rectifying circuit comprises a sixth capacitor C6, a sixth resistor R6 and a seventh resistor R7, two ends of the sixth capacitor C6 are respectively connected with the other ends of the fourth resistor R4 and the fifth resistor R5, and two ends of the sixth capacitor C6 are also respectively connected with the sixth resistor R6 and the seventh resistor R7.
In the APD bias voltage module with temperature compensation function, the operational amplifier U1AAn operational amplifier in an open loop amplification mode; the negative feedback voltage regulating circuit comprises an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, a third triode Q3, a twelfth resistor R12, a thirteenth resistor R13, a seventeenth resistor R17 and a seventh resistor R17An eighteenth resistor R18 and a third triode Q3 with their bases connected with an operational amplifier U1AThe output end and the collector are respectively connected with one end of an eighth resistor R8 and a ninth resistor R9, the emitter is grounded, the other end of an eighth resistor R8 is respectively grounded through a seventh capacitor C7 and connected with the output end of a seventh resistor R7, and an operational amplifier U1AAn input end is respectively connected with the ninth resistor R9 and the tenth resistor R10, and the operational amplifier U1AThe other input end is respectively connected with a fifteenth resistor R15 and a sixteenth resistor R16, the fifteenth resistor R15 is connected with an analog temperature sensor U through a twelfth resistor R12TThe fifteenth resistor R15 is connected to ground through the thirteenth resistor R13, the sixteenth resistor R16 is connected to the reference voltage source Uc through the seventeenth resistor R17, and the sixteenth resistor R16 is connected to ground through the eighteenth resistor R18.
In the APD bias voltage module with the temperature compensation function, ER7.5 is selected as the framework of the high-frequency transformer T1, and the ratio of the number of primary coil turns to the number of secondary coil turns is 10: 314, magnification factor of 62.8.
In the APD bias voltage module with the temperature compensation function, the resistance value of the third resistor R3 should not be lower than 30K; the eighth resistor R8 is made of alloy.
In the APD bias voltage module with the temperature compensation function, the values of the fourth resistor R4 and the seventh resistor R7 are 100K, and when the oscillation frequency is 180KHz, the fifth capacitor C5 and the sixth capacitor C6 are 47nF and are packaged as 1802 ceramic capacitors.
In the APD bias voltage module with the temperature compensation function, the first diode D1, the second diode D2, the third diode D3 and the fourth diode D4 are schottky diodes with a withstand voltage value of 1000V and a reverse recovery time of 100 ns.
In the APD bias voltage module with the temperature compensation function, the analog temperature sensor UTSelecting TM50 with the working temperature range of-40-80 ℃; operational amplifier U1ASelecting LMH6629 with bandwidth of 180 MH; the standard voltage source Uc adopts REF series.
In the APD bias voltage module with the temperature compensation function, the third triode Q3 is a high-voltage triode, and the withstand voltage value is not lower than 500V.
Compared with the prior art, the invention designs a low-power-consumption small-volume temperature self-adaptive APD bias voltage module based on the operation of an analog temperature sensor and an analog circuit by combining the advantages of an inverter and a transformer step-up method and a bias voltage numerical control method, and the module has the advantages of extremely low ripple waves and independence on any digital chip and computing resources.
Drawings
FIG. 1 is a block diagram of an overall architecture of an APD bias voltage module according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an inverter boost portion of the circuit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a circuit of a multi-stage filtering full-wave rectification part according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a rectified ripple according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a bias voltage setting and temperature compensation portion of a circuit according to one embodiment of the present invention;
FIG. 6 is a pictorial view of an APD bias voltage module in accordance with an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The present invention is further illustrated by the following examples, which are not to be construed as limiting the invention.
The embodiment combines the advantages of a transformer step-up method and a bias voltage numerical control method, and designs a low-power-consumption small-volume temperature self-adaptive APD bias voltage module based on the operation of an analog temperature sensor and an analog circuit. Comprises an inversion boosting part, a multi-stage filtering full-wave rectification part, a bias voltage setting part and a temperature compensation part,
the inversion boosting part consists of two oscillation triodes, a transformer, a frequency-selecting capacitor, a power supply filter circuit and an oscillation shaping capacitor, and has the main functions of inverting a direct current signal of an input module into a high-frequency alternating current signal and outputting high-voltage sinusoidal alternating current after boosting by the high-frequency transformer.
The multistage filtering full-wave rectification part mainly comprises four high-frequency diodes and a plurality of resistance capacitors, and mainly has the functions of converting high-voltage high-frequency alternating current signals into low-ripple high-voltage direct current through the first stage full-wave rectification circuit and further reducing voltage ripples through the second stage filtering circuit.
The bias voltage setting and temperature compensating part mainly comprises a standard voltage source, an analog temperature sensor, an operational amplifier, a switching triode and a plurality of resistance capacitors, and mainly has the functions of regulating the high voltage output by the multistage filtering full-wave rectifying part to the required amplitude value through negative feedback and compensating the bias voltage of the APD according to the change of the environmental temperature.
The embodiment is realized by the following technical scheme, as shown in fig. 1, an APD bias voltage module with a temperature compensation function includes an inverter boosting part, a multi-stage filtering full-wave rectification part, a bias voltage setting part and a temperature compensation part, which are connected in sequence.
As shown in fig. 2, the inverting and boosting part includes a power filter circuit, and a third resistor R3, a positive feedback oscillation circuit, an LC frequency-selecting circuit and a third capacitor C3 connected in sequence;
a positive feedback oscillation loop which is formed by a first triode Q1 and a second triode Q2 of two NPN triodes, a primary coil L2 of a transformer T1 and a feedback coil L3 of the transformer: for inverting the input dc signal to an ac signal. The positive feedback oscillation process is as follows: as shown in fig. 2, assuming that the polarity of the oscillating signal at the base of the first transistor Q1 is positive and the polarity of the collector is negative opposite to the base, the polarity signal is positive after being inverted by the transformer primary coil inductor L2 and coupled to the collector of the second transistor Q2, the polarity of the base of the second transistor Q2 is negative opposite to the collector, the polarity of the signal is negative, the signal is inverted again by the transformer feedback coil L3, the signal coupled to the base of the first transistor Q1 is still positive, so the signal generating process is a positive feedback process, and because the polarity of the base of the first transistor Q1 is opposite to that of the second transistor Q2, the polarity of the second transistor Q2 is cut off when the first transistor Q1 is in the amplifying state, and the polarity of the first transistor Q1 is cut off when the second transistor Q2 is in the amplifying state, so that the polarities of the output signals of the first transistor Q1 and the second transistor Q2 are opposite and equal, the signals output by the first triode Q1 and the second triode Q2 oscillate up and down near the zero position of the power supply. The inversion process from the dc signal to the ac signal is completed.
The third capacitor C3 is used for improving the oscillating signal, filtering out noise waves and reducing loss in the boosting process.
The third resistor R3 is used for limiting the current in the positive feedback loop, so that the power consumption of the module can be reduced while circuit components are protected, and the larger the third R3 resistor is, the smaller the current in the loop is, the lower the power consumption of the module is.
The first inductor L1, the first resistor R1, the first capacitor C1 and the second capacitor C2 together form a power filter circuit for reducing input power noise.
The secondary coil L4 of the transformer and the fourth capacitor C4 form an LC frequency-selecting circuit, the frequency of the alternating current signal generated by inversion is determined by the values of the secondary coil L4 of the transformer and the fourth capacitor C4, and the oscillation frequency f0Comprises the following steps:
Figure BDA0003043883960000051
the AC signal generated by inversion is a sinusoidal signal, which can be described by the following formula
Figure BDA0003043883960000052
Vin is the dc voltage input to the inverter, and assuming that the ratio of the number of turns of the secondary coil L4 and the primary coil L2 of the high-frequency transformer is N, the output signal of the high-frequency transformer is:
Figure BDA0003043883960000061
the voltage amplification factor of the inverting and boosting part is 2N, and the alternating current frequency is
Figure BDA0003043883960000062
As shown in fig. 3, the multistage filtering full-wave rectification section includes a first stage full-wave rectification circuit and a second stage rectification circuit connected thereto.
The first-stage full-wave rectifying circuit composed of the first diode D1, the second diode D2, the third diode D3, the fourth diode D4, the fifth capacitor C5, the fourth resistor R4 and the fifth resistor R5 and the second-stage full-wave rectifying circuit composed of the sixth capacitor C6, the sixth resistor R6 and the seventh resistor R7 perform conversion from alternating current to direct current signals together, so that output voltage ripples are reduced. The first diode D1, the second diode D2, the third diode D3 and the fourth diode D4 are all high-frequency diodes.
The working flow of the first full-wave rectifying circuit is as follows: when the transformer T1 outputs positive-going pulses of high-frequency alternating current, the second diode D2 and the third diode D3 are turned on, the first diode D1 and the fourth diode D4 are turned off, and the voltage polarity of the fifth capacitor C5 is up-positive and down-negative; when the transformer T1 outputs negative-going pulses of high-frequency ac power, the voltage polarity of the fifth capacitor C5 is still positive, negative, the second diode D2 and the third diode D3 are turned off, the first diode D1 and the fourth diode D4 are turned on, and the direction of the current flowing through the fifth capacitor C5 is the same as that of the positive-going pulses, so the positive and negative polarities of the voltage across the fifth capacitor C5 are unchanged throughout the cycle. As shown in fig. 4, the voltage V on the fifth capacitor C5C5When rising, the sixth capacitor C6 is charged by the fourth resistor R4, and VC5When dropping, the voltage V across the fifth capacitor C5 is due to the capacitive impedance of the capacitor to the ac signalC5Is decreased by a value VRip5Comprises the following steps:
Figure BDA0003043883960000063
VRip5the second filtering is performed on the capacitor C6, and the voltage ripple on C6 is:
Figure BDA0003043883960000064
VRip6for the final voltage ripple magnitude, the resonant frequency f can be seen0V is larger as the values of the resistors R4 and R7 and the capacitors C6 and C5 are largerRip6The smaller the voltage ripple, the better the power supply quality. The multi-stage filtering full-wave rectification has smaller ripple compared with the common full-wave rectification circuit.
As shown in FIG. 5, the bias voltage setting and temperature compensating section includes an operational amplifier U1AA negative feedback voltage regulating circuit, a standard voltage source Uc and an analog temperature sensor U connected with the sameT。
Using analogue temperature sensors UTA temperature sensor as a module, the output voltage of which varies with temperature and an output voltage VTThe function of the curve as a function of temperature is:
VT＝Vz+VAPD×T (6)
wherein VzIs the voltage output by the analog temperature sensor at 0 ℃, T is the current environment temperature, VAPDIs the temperature drift coefficient of some APD.
Using an operational amplifier U1AThe bias voltage of the APD is adjusted by a negative feedback process as follows:
the original voltage output by the multistage filtering full-wave rectification part generates an APD bias voltage V through an eighth resistor R8fThe larger the current flowing through the eighth resistor R8, the larger the APD bias voltage VfThe smaller. V generated by voltage division of a ninth resistor R9 and a tenth resistor R10cEqual to:
Figure BDA0003043883960000071
the third triode Q3 is a high voltage triode, when the base voltage is high, the collector and emitter are conducted, the eighth resistor R8 is grounded, and at this time, a large current flows through the eighth resistor R8, VfAnd decreases. Operational amplifier U1AFor an operational amplifier in an open-loop amplification mode, the amplifier outputs a high level when the voltage at the positive input terminal is greater than the voltage at the negative input terminal, and otherwise outputs a low level. Uc is a standard voltage source, and the voltage V output by the standard voltage sourceEVoltage V is obtained after voltage division by a seventeenth resistor R17 and an eighteenth resistor R18eAnalog temperature sensor UTThe output voltage is divided by a twelfth resistor R12 and a thirteenth resistor R13 to obtain a voltage Vt。
Output voltage V of temperature sensortVoltage V generated by standard voltage sourceeAdded at the negative input of the operational amplifier, VfVoltage V obtained by voltage dividing resistorcIs input to the positive input of the amplifier due to the operational amplifier U1AFor open loop amplification mode, when Vt+Ve＜VcWhen the operational amplifier outputs a high level, the third triode Q3 is turned on, and at this time, a current flows through the eighth resistor R8, the voltage across the eighth resistor R8 increases, and the voltage V across the left end of the ninth resistor R9fDecrease, again because of Vc＝R10/(R10+R9)Vf，VcIs reduced to Vt+Ve＞VcWhen the triode is turned off, VfStart to increase, VcAnd the third transistor Q3 is turned on again. Repeating the above steps, and after a very small period of time, the bias voltage V of the APDfWill stabilize at:
Figure BDA0003043883960000081
when the ambient temperature T changes, the temperature is represented by formula (5), VtAfter the change, the temperature compensator is stabilized at a new bias voltage V after a new round of feedback adjustmentfRealizing a bias voltage VfAs a function of the temperature T.
The voltage amplitude and the temperature compensation coefficient can be arbitrarily set by changing the values of the thirteenth resistor R13 and the eighteenth resistor R18.
In formula (8):
Figure BDA0003043883960000082
Figure BDA0003043883960000083
according to equations (6), (9), (10), equation (8) can be:
Figure BDA0003043883960000084
in the formula (11), the ninth resistor R9, the tenth resistor R10, the twelfth resistor R12 and the seventeenth resistor R17 are fixed values,
Figure BDA0003043883960000085
for the feedback coefficient of the feedback circuit, the thirteenth resistor R13 and the eighteenth resistor R18 are adjustable potentiometers, and the current bias voltage of the APD can be arbitrarily adjusted by setting the resistors of the thirteenth resistor R13 and the eighteenth resistor R18
Figure BDA0003043883960000086
And temperature compensation coefficient
Figure BDA0003043883960000087
And no digital chip resource is occupied, and the device can independently operate after parameter setting is finished.
In addition, the values of the secondary coil L4 of the frequency-selecting inductive transformer and the fourth capacitor C4 of the frequency-selecting capacitor should be as small as possible to increase the oscillation frequency and reduce the volume of the transformer.
And, in order to further reduce the module volume, ER7.5 is selected as the framework of the transformer T1, and the ratio of the number of primary coil turns to the number of secondary coil turns is 10: 314, magnification factor of 62.8.
In addition, the first triode Q1 and the second triode Q2 of the oscillation triode are high-frequency triodes, so that the requirement of high-frequency oscillation is met.
And, the third resistor R3 of the current limiting resistor has a resistance value not lower than 30K.
And, the fourth resistor R4, the seventh resistor R7 take 100K, when the oscillation frequency is 180KHz, the fifth capacitor C5, the sixth capacitor C6 can choose 47nF, the encapsulation is 1802 ceramic capacitor, in order to reduce the circuit volume.
And the high-frequency diodes D1, D2, D3 and D4 are Schottky diodes with the withstand voltage value of 1000V and the reverse recovery time of 100 ns.
And, an operational amplifier U1ALMH6629 from TI corporation, with a bandwidth of 180MH, may be selected.
In addition, the third triode Q3 needs to be a high-voltage triode, and the withstand voltage value is not lower than 500V.
And, the standard voltage source Uc may be selected from the REF series of TI corporation.
In addition, in order to ensure the accuracy of voltage control, the eighth resistor R8 of the current limiting resistor should be an alloy resistor with high accuracy.
And finally, the volume of the APD bias voltage module can be controlled to be 1.7cm multiplied by 2.7cm, the power consumption is not more than 100mW, the power supply ripple is not more than 0.005%, and the temperature compensation precision is not less than 1%.
The implementation steps of this example are as follows: the inversion boosting part of the module converts the input original voltage into alternating current, and then the high-frequency transformer boosts the voltage. The boosted high-voltage sine alternating current is converted from alternating current to direct current through a multi-stage filtering full-wave rectification part, and voltage ripples are reduced through a multi-stage filter. The bias voltage setting and temperature compensation part is used for reducing the voltage output by the multistage filtering full-wave rectification part through negative feedback regulation, temperature compensation is carried out through the analog temperature sensor, and through setting of specific resistors of the bias voltage setting and temperature compensation part, the module can output the voltage with any amplitude within a certain range and compensate the temperature drift of any parameter.
Fig. 6 shows a photograph of the real object of the present embodiment.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.

Claims (7)

1. An APD bias voltage module with temperature compensation, comprising: the device comprises an inversion boosting part, a multi-stage filtering full-wave rectification part, a bias voltage setting part and a temperature compensation part which are connected in sequence; the original voltage is connected with a Vin end of the inverting and boosting part, the multistage filtering full-wave rectification part is connected with a positive end and a negative end of a secondary winding of the inverting and boosting part, and the bias voltage setting and temperature compensation part is connected with an HV output end of the multistage filtering full-wave rectification part;
the inverting and boosting part comprises: one end of a first resistor (R1) is connected with a power input end Vin, the other end of the first resistor (R1) is connected with a first inductor (L1) and a first capacitor (C1), the other end of the first capacitor (C1) is grounded, the other end of the first inductor (L1) is connected with a second capacitor (C2), a third resistor (R3) and a center tap of a primary coil (L2) of a high-frequency transformer (T1), the other end of a second capacitor (C2) is grounded, the other end of a third resistor (R3) is connected with a base of a first transistor (Q1) and a positive end of a feedback coil (L3) of the high-frequency transformer (T1), emitters of a second transistor (Q2) and a first transistor (Q1) are grounded, a base of a second transistor (Q2) is connected with a negative end of a feedback coil (L3) of the high-frequency transformer (T1), one end of a third capacitor (C3) is connected with a collector 1 of the first transistor (Q1) and a negative end of a primary coil (L2) of the high-frequency transformer (T638), the other end of the fourth capacitor (C4) is connected with the collector of the second transistor (Q2) and the positive end of the primary coil (L2) of the high-frequency transformer (T1), after the two ends of the fourth capacitor (C4) are connected with the two ends of the secondary coil (L4) of the high-frequency transformer (T1), one end of the fourth capacitor is connected with the power output end Vout, and the other end of the fourth capacitor is grounded;
the multistage filtering full-wave rectification part comprises: a cathode of the first diode (D1) is connected to a positive terminal of a secondary coil (L4) of the high frequency transformer (T1), an anode is connected to an anode of a third diode (D3) and a negative terminal of a fifth capacitor (C5), a cathode of the third diode (D3) is connected to a negative terminal of a secondary coil (L4) of the high frequency transformer (T1) and an anode of a fourth diode (D4), a cathode of the fourth diode (D4) is connected to a positive terminal of a fifth capacitor (C5) and a cathode of a second diode (D2), an anode of the second diode (D2) is connected to a cathode of a first diode (D1), a positive terminal of a fifth capacitor (C5) is connected to one terminal of the fourth resistor (R4), a negative terminal of the fifth resistor (R5) is connected to one terminal of the fifth resistor (R5), and the other terminals of the fourth resistor (R4) and the fifth resistor (R5) are connected to one terminal of a sixth resistor (C6) and a seventh terminal (C3646) of the sixth capacitor (C9372), the other end of the seventh resistor (R7) is connected with the direct-current high-voltage output end HV, and the other end of the sixth resistor (R6) is grounded;
the bias voltage setting and temperature compensating section includes: one end of an eighth resistor (R8) and one end of a seventh capacitor (C7) are connected with the HV end of the multi-stage filtering full-wave rectification part, the other end of the seventh capacitor (C7) is grounded, the collector of a third triode (Q3) is connected with the other end of an eighth resistor (R8), the emitter of a third triode (Q3) is grounded, the base of the third triode (Q3) is connected with an operational amplifier (U)1A) Is connected with the first output terminal of the eighth resistor (R8), and the ninth resistor (R9) has one end connected with the other end of the eighth resistor (R8) and the other end connected with the tenth resistor (R10) and the operational amplifier (U)1A) Is connected to the positive input terminal of an operational amplifier (U)1A) An operational amplifier in an open loop amplification mode; the other end of the tenth resistor (R10) is grounded, and the analog temperature sensor (U)T) The second output end of the operational amplifier is sequentially connected with a twelfth resistor (R12) and a thirteenth resistor (R13), the other end of the thirteenth resistor (R13) is grounded, the other end of the twelfth resistor (R12) is connected with a fifteenth resistor (R15), and the other end of the fifteenth resistor (R15) is connected with the operational amplifier (U)1A) The second output end of the standard voltage source (Uc) is sequentially connected with a seventeenth resistor (R17) and an eighteenth resistor (R18), the other end of the eighteenth resistor (R18) is grounded, the other end of the seventeenth resistor (R17) is connected with a sixteenth resistor (R16), and the other end of the sixteenth resistor (R16) is connected with an operational amplifier (U16)1A) Are connected to the negative input terminal.
2. The APD bias voltage module with temperature compensation of claim 1, wherein: ER7.5 is selected as a framework of the high-frequency transformer (T1), and the ratio of the number of primary coil turns to the number of secondary coil turns is 10: 314, magnification factor of 62.8.
3. The APD bias voltage module with temperature compensation of claim 1, wherein: the resistance value of the third resistor (R3) is not lower than 30K; the eighth resistor (R8) is an alloy resistor.
4. The APD bias voltage module with temperature compensation of claim 1, wherein: the values of the fourth resistor (R4) and the seventh resistor (R7) are 100K, and when the oscillation frequency is 180KHz, 47nF is selected as the fifth capacitor (C5) and the sixth capacitor (C6), and the ceramic capacitor is packaged as 1802.
5. The APD bias voltage module with temperature compensation of claim 1, wherein: the first diode (D1), the second diode (D2), the third diode (D3) and the fourth diode (D4) are Schottky diodes with the withstand voltage value of 1000V and the reverse recovery time of 100 ns.
6. The APD bias voltage module with temperature compensation of claim 1, wherein: analog temperature sensor (U)T) Selecting TM50 with the working temperature range of-40-80 ℃; operational amplifier (U)1A) Selecting LMH6629 with bandwidth of 180 MH; the standard voltage source (Uc) adopts REF series.
7. The APD bias voltage module with temperature compensation of claim 1, wherein: the third triode (Q3) is a high-voltage triode with the withstand voltage value not lower than 500V.
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