CN113193146A - Packaging structure of organic light emitting diode device, display device and packaging method thereof - Google Patents
Packaging structure of organic light emitting diode device, display device and packaging method thereof Download PDFInfo
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- CN113193146A CN113193146A CN202110455127.2A CN202110455127A CN113193146A CN 113193146 A CN113193146 A CN 113193146A CN 202110455127 A CN202110455127 A CN 202110455127A CN 113193146 A CN113193146 A CN 113193146A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 150000004767 nitrides Chemical class 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000010936 titanium Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 4
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052726 zirconium Inorganic materials 0.000 claims abstract 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 31
- 238000005538 encapsulation Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 8
- 239000001301 oxygen Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 4
- 230000035699 permeability Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 106
- 239000010409 thin film Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a packaging structure of an organic light-emitting diode device, a display device and a packaging method thereof, wherein the packaging structure comprises the following components: a substrate provided with an organic light emitting diode device; a first ALD layer disposed on the substrate, a first inorganic dielectric layer disposed on the first ALD layer, a second ALD layer disposed on the first inorganic dielectric layer; the first ALD layer and the second ALD layer are made of oxides or nitrides of aluminum, hafnium, titanium, zirconium and silicon; the first inorganic dielectric layer is formed by sputtering metal oxide, metal nitride or metal oxynitride. The beneficial effects are that: the packaging structure comprises at least two oxide or nitride layers and an inorganic dielectric layer sandwiched between the oxide or nitride layers, and the combination of the structure ensures that the permeability in the water-oxygen packaging structure is very low, thereby improving the packaging effect.
Description
Technical Field
The invention relates to the technical field of diode packaging, in particular to a packaging structure of an organic light-emitting diode device, a display device and a packaging method thereof.
Background
Organic Light Emitting Diode (OLED) devices are typically stacks of thin film layers formed on a substrate. In the stack structure, an organic light emitting layer and an adjacent semiconductor layer are sandwiched between a cathode and an anode. Any layer, in particular the light-emitting layer, may be composed of a plurality of sublayers. In a typical OLED, the cathode or anode is transparent, and these stacked-structure thin film layers can be formed by evaporation, spin-coating, and other suitable polymer thin film formation techniques or chemical self-assembly. The thickness typically varies from a few hundred to a few thousand angstroms. The OLED material is extremely sensitive to water and oxygen components and is easily damaged by the water and oxygen components, and the service life of an organic light-emitting diode (OLED) device is greatly shortened. Therefore, the improvement of the sealing process is of great significance to practical production.
Currently, water oxygen protection of organic electroluminescent devices can be achieved by Thin Film Encapsulation (TFE). Thin Film Encapsulation (TFE) is used for water oxygen protection of top-emitting Organic Light Emitting Diode (OLED) devices due to its transparent nature. There are a variety of thin film encapsulation methods. One such method is to encapsulate an Organic Light Emitting Diode (OLED) device using an alternating multilayer stack of inorganic and organic layers. The encapsulation structure contains different layers, but each layer is permeable to the environment to a certain degree. Therefore, the effectiveness and reliability of the package structure are to be improved. In bottom-emitting Organic Light Emitting Diode (OLED) devices, the OLED is sandwiched between glass or metal cover plates and the edges are sealed with epoxy, and a desiccant needs to be sealed therein as well. In top-emitting Organic Light Emitting Diode (OLED) devices, however, light needs to pass through a transparent encapsulation layer, and thus there is no space for using a desiccant.
Disclosure of Invention
The invention provides a packaging structure of an organic light-emitting diode device, a display device and a packaging method thereof, and aims to solve the problems that water and oxygen have certain permeability in the packaging structure and the organic light-emitting diode device is packaged in the prior art.
An encapsulation structure of an organic light emitting diode device, comprising:
a substrate provided with an Organic Light Emitting Diode (OLED) device;
a first ALD layer disposed on the substrate, a first inorganic dielectric layer disposed on the first ALD layer, a second ALD layer disposed on the first inorganic dielectric layer; the first ALD layer, the first inorganic dielectric layer and the second ALD layer form a group of packages;
the first ALD layer and the second ALD layer are made of oxides or nitrides of aluminum (Al), hafnium (Hf), titanium (Ti), zirconium (Zr) and silicon (Si);
the first inorganic dielectric layer is formed by sputtering metal oxide, metal nitride or metal oxynitride.
In some embodiments, the materials of the first and second ALD layers are the same.
In some embodiments, the first and second ALD layers are different materials.
In some embodiments, the first and second ALD layers are both a12O3And (3) a layer.
In some embodiments, the first inorganic dielectric layer is SiO2And (3) a layer.
In some embodiments, the set of packages is greater than or equal to 2.
In some embodiments, stress compensation is performed in the set of packages.
In some embodiments, the first ALD layer has a tensile stress and the first inorganic dielectric layer has a compressive stress.
In some embodiments, the first ALD layer, the first inorganic dielectric layer, and the second ALD layer are transparent, inorganic, and dielectric.
In some embodiments, the first ALD layer, the first inorganic dielectric layer, and the second ALD layer have thicknesses of 300A-450A, 1000A-3000A, and 350A-500A, respectively.
The invention also provides an organic light emitting diode device display device which comprises the packaging structure of the organic light emitting diode device.
The invention also provides a packaging method of the organic light-emitting diode device, which comprises the following steps:
providing a substrate provided with an Organic Light Emitting Diode (OLED) device;
forming a first ALD layer on the substrate by atomic layer deposition;
forming a first inorganic dielectric layer on the first ALD layer by sputtering;
and forming a second ALD layer on the first inorganic dielectric layer through atomic layer deposition to obtain the packaging structure.
In some embodiments, a third ALD layer is formed by atomic layer deposition on the second ALD layer, a second inorganic dielectric layer is formed by sputtering on the third ALD layer; forming a third ALD layer by atomic layer deposition on the second inorganic dielectric layer; the process is repeated for N times, wherein N is more than or equal to 1.
The invention has the beneficial effects that:
(1) the packaging structure comprises at least two oxide or nitride layers and an inorganic dielectric layer sandwiched between the oxide or nitride layers, and the combination of the structure ensures that the permeability in the water-oxygen packaging structure is very low, thereby improving the packaging effect.
(2) The packaging structure consists of a plurality of structural layers, stress compensation can be carried out among the structural layers, the impermeability of the packaging structure is improved, and the stress among the film layers is improved.
(3) The film layers can be overlapped according to requirements to form a thicker packaging structure.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive exercise.
FIG. 1 is a drawing of the present invention: a schematic cross-sectional view of a package structure of the organic light-emitting diode device in example 1;
FIG. 2 is a drawing of the present invention: a schematic cross-sectional view of a package structure of the organic light-emitting diode device in example 2;
FIG. 3 is a drawing of the present invention: a flow chart for packaging the organic light emitting diode device in example 4.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further explained below by combining the specific drawings.
Example 1
Referring to fig. 1, an encapsulation structure of an organic light emitting diode device includes: a substrate 10 on which an Organic Light Emitting Diode (OLED) device is disposed on the substrate 10, the device including a hole transport layer and an electron transport layer, and an anode and a cathode. A first ALD layer 101, a first inorganic dielectric layer 102, and a second ALD layer 103 are sequentially stacked on the substrate 10. The first ALD layer 101 and the second ALD layer 103 may be formed by depositing an oxide or nitride of aluminum (Al), hafnium (Hf), titanium (Ti), zirconium (Zr), or silicon (Si) by an atomic layer deposition method; the first ALD layer 101 in this embodiment is composed of Atomic Layer Deposited (ALD) alumina (a12O 3). The encapsulation layer may encapsulate most of the particles that may be present on the OLED surface and has tensile stress. The first inorganic dielectric layer 102 is formed of a metal oxide, a metal nitride, or a metal oxynitride by sputtering. The first inorganic dielectric layer 102 in this embodiment is made of silicon dioxide (SiO)2) And (4) forming. The first inorganic dielectric layer 102 has a compressive stress, and the sputter deposited first inorganic dielectric layer 102 has more pinholes than the first ALD layer 101. The second ALD layer 103 is Atomic Layer Deposited (ALD) of aluminum oxide (A1)2O3) Which is formed to cover pinholes present in the first inorganic dielectric layer 102. The first ALD layer 101 is encapsulating most of the particles that may be present on the OLED surface, this layer having a tensile stress. The first inorganic dielectric layer 102 further helps sealing and has compressive stress, so that the impermeability of the package structure can be effectively improved and the stress between the layers can be improved. The second ALD layer 103 serves as a third encapsulation further covering any pinholes exposed after deposition of the first inorganic dielectric layer 102. The thickness of the first ALD layer 101 may be 300A to 450A, 300A in this embodiment. The thickness of the first inorganic dielectric layer 102 may be selected from 1000A to 3000A, 1500A in this embodiment. The thickness of the second ALD layer 103 may be selected from 350A to 500A, 500A in this embodiment.
The above encapsulation layers are transparent, inorganic and dielectric, and their stacked structures together form an efficient encapsulation structure for Organic Light Emitting Diode (OLED) devices.
The packaging structure comprises at least two oxide or nitride layers and an inorganic dielectric layer sandwiched between the oxide or nitride layers, and the combination of the structure ensures that the permeability in the water-oxygen packaging structure is very low, thereby improving the packaging effect.
The packaging structure is composed of a plurality of structural layers, stress compensation can be carried out among the structural layers, the impermeability of the packaging structure is improved, and stress among the film layers is improved.
Example 2
Referring to fig. 2, the encapsulation structure of the organic light emitting diode device in the figure is different from that of embodiment 1 in that a third ALD layer 104, a second inorganic dielectric layer 105, and a fourth ALD layer 106 are further sequentially stacked on the second ALD layer 103 to form a thicker encapsulation film layer.
Of course, one skilled in the art can also continue to stack two ALD layers and an inorganic dielectric layer sandwiched between the ALD layers as needed based on example 2.
Example 3
An organic light emitting diode display device includes any one of the organic light emitting diode package structures as shown in fig. 1. Other structures of the organic light emitting diode display device are not particularly limited in this embodiment, and those skilled in the art can design the organic light emitting diode display device by referring to the conventional technology.
Example 4
Referring to fig. 3, a method of packaging an organic light emitting diode device includes:
step S1: a substrate 10 is provided, on which substrate 10 Organic Light Emitting Diode (OLED) devices are disposed.
Step S2: depositing a first ALD layer, A1, on the substrate 10 by atomic layer deposition2O3And (3) a layer. The Atomic Layer Deposition (ALD) deposited layer has high compactness and high coating property, and can seal most particles on the surface of an organic light-emitting diode (OLED) material.
Step S3: a first dielectric layer 102, which is a silicon dioxide (SiO2) layer, is formed by sputtering on the first ALD layer 101. The first inorganic dielectric layer 102 provides compressive stress and further helps sealing to enhance the barrier properties of the package structure.
Step S4: a second ALD layer 103, which is an aluminum oxide (a12O3) layer, is deposited by Atomic Layer Deposition (ALD) on the first dielectric layer 102. The second ALD layer 103 is used to further seal any pinholes that may exist after the deposition of the first inorganic dielectric layer 106 using sputtering.
In an actual process, repeating the steps S2, S3, and S4 can form a thicker package structure. These steps may be repeated several times to form a package of the desired thickness.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. An encapsulation structure of an organic light emitting diode device, comprising:
a substrate provided with an organic light emitting diode device;
a first ALD layer disposed on the substrate, a first inorganic dielectric layer disposed on the first ALD layer, a second ALD layer disposed on the first inorganic dielectric layer; the first ALD layer, the first inorganic dielectric layer and the second ALD layer form a group of packages;
the first ALD layer and the second ALD layer are made of oxides or nitrides of aluminum, hafnium, titanium, zirconium and silicon;
the first inorganic dielectric layer is formed by sputtering metal oxide, metal nitride or metal oxynitride.
2. According to claim 1In some embodiments, the first ALD layer and the second ALD layer are both a12O3And (3) a layer.
3. The package structure of claim 1, wherein the first inorganic dielectric layer is SiO2And (3) a layer.
4. The package structure of an oled device claimed in claim 1, wherein the number of packages is 2 or greater.
5. The package structure of the OLED device as claimed in claim 1, wherein stress compensation is performed in the set of packages.
6. The package structure of the OLED device as claimed in claim 1, wherein the first ALD layer has a tensile stress and the first inorganic dielectric layer has a compressive stress.
7. The package structure of the organic light emitting diode device of claim 1, wherein the first ALD layer, the first inorganic dielectric layer, and the second ALD layer are transparent, inorganic, and dielectric.
8. An organic light emitting diode device display device, characterized by comprising an encapsulation structure of the organic light emitting diode device according to any one of claims 1 to 7.
9. A method of packaging an organic light emitting diode device, comprising:
providing a substrate provided with an organic light emitting diode device;
forming a first ALD layer on the substrate by atomic layer deposition;
forming a first inorganic dielectric layer on the first ALD layer by sputtering;
and forming a second ALD layer on the first inorganic dielectric layer through atomic layer deposition to obtain the packaging structure.
10. The method of claim 9, wherein a third ALD layer is formed on the second ALD layer by atomic layer deposition, and a second inorganic dielectric layer is formed on the third ALD layer by sputtering; forming a third ALD layer by atomic layer deposition on the second inorganic dielectric layer; the process is repeated for N times, wherein N is more than or equal to 1.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110455127.2A CN113193146A (en) | 2021-04-26 | 2021-04-26 | Packaging structure of organic light emitting diode device, display device and packaging method thereof |
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| CN202110455127.2A CN113193146A (en) | 2021-04-26 | 2021-04-26 | Packaging structure of organic light emitting diode device, display device and packaging method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037360A (en) * | 2014-06-25 | 2014-09-10 | 上海和辉光电有限公司 | Organic light-emitting device, packaging structure and method |
| US20150221891A1 (en) * | 2014-02-06 | 2015-08-06 | Emagin Corporation | High efficacy seal for organic light emitting diode displays |
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- 2021-04-26 CN CN202110455127.2A patent/CN113193146A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150221891A1 (en) * | 2014-02-06 | 2015-08-06 | Emagin Corporation | High efficacy seal for organic light emitting diode displays |
| CN104037360A (en) * | 2014-06-25 | 2014-09-10 | 上海和辉光电有限公司 | Organic light-emitting device, packaging structure and method |
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Application publication date: 20210730 |