CN113193068B - Infrared photoelectric detector based on cobalt-doped lanthanum iron cobaltate nano film and manufacturing method thereof - Google Patents

Infrared photoelectric detector based on cobalt-doped lanthanum iron cobaltate nano film and manufacturing method thereof Download PDF

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CN113193068B
CN113193068B CN202110497169.2A CN202110497169A CN113193068B CN 113193068 B CN113193068 B CN 113193068B CN 202110497169 A CN202110497169 A CN 202110497169A CN 113193068 B CN113193068 B CN 113193068B
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仲志成
景昭君
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Jilin University
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Abstract

The invention relates to an infrared photoelectric detector based on a cobalt-doped lanthanum iron cobaltate nano film and a manufacturing method thereof, belonging to the technical field of inorganic semiconductor photoelectric detectors. The perovskite nano-film is formed by an interdigital electrode and a perovskite nano-film coated on the interdigital electrode, wherein the perovskite nano-film is LaFeO 3 Perovskite nanocrystalline is used as a matrix material and is doped with LaFeO through cobalt ions 3 The Fe site of the perovskite nanocrystal is obtained. The perovskite optical detector prepared by the preparation method has the advantages of simple structure, simple preparation process, low production cost, no need of expensive instruments and equipment and the like. The LaFeO is greatly improved by the film sensitive material obtained by doping the cobalt ions in the lanthanum ferrite 3 The light absorption intensity in the infrared region increases the electrical properties of perovskite, reduces surface defects and improves carrier mobility.

Description

Infrared photoelectric detector based on cobalt-doped lanthanum iron cobaltate nano film and manufacturing method thereof
Technical Field
The invention relates to the technical field of inorganic semiconductor photoelectric detectors, in particular to an infrared photoelectric detector based on a cobalt-doped iron-lanthanum cobaltate nano film and a manufacturing method thereof.
Background
Sunlight can be divided into three wave bands, namely an ultraviolet region, a visible region and an infrared region; the wave band of 0.75 to 1000 mu m is an infrared wave band. Wherein 780-2526nm is near infrared band. In the civil field, the system is used for communication, medical imaging, environmental and meteorological monitoring and the like; in military affairs, the infrared photoelectric detector has irreplaceable functions in the aspects of military reconnaissance, night-vision, infrared guidance and the like.
The infrared light detector is an important photoelectric device for realizing sensing detection through photoelectric signal conversion, and the photoelectric detection is mainly completed through the following steps: firstly, a detector generates photon-generated carriers under the condition of external infrared radiation, then the photon-generated carriers are transported and multiplied in a semiconductor in a diffusion and drift mode, and finally, light current formed by the photon-generated carriers is collected by electrodes at two ends, so that the detection of the external infrared radiation is realized.
Infrared detectors convert infrared radiant energy, invisible to the unaided human eye, into measurable energy, the most important consideration being the choice of materials and device structures. Compared with a large bulk material, the nano film material has excellent photoelectric characteristics, and is favorable for being applied to the field of photoelectric detection. The nano material has small size and high internal charge transport speed, so that the response speed can be greatly improved. Meanwhile, the large specific surface area also enables the nano material to have a large light absorption area, namely, the light absorption capacity is also strong.
Currently commercially available near infrared photodetectors are typically silicon-based photodetectors that can only respond to infrared light having a wavelength shorter than 1100 nm. Moreover, these photodetectors usually have complex device structures and complicated fabrication steps, which makes them expensive and limits their applications; the traditional metal oxide electron transport material has poor conductivity, a plurality of defects and relatively weak light absorption capacity.
Disclosure of Invention
The invention aims to provide an infrared photoelectric detector based on a cobalt-doped lanthanum iron cobaltate nano film and a manufacturing method thereof, and solves the problems in the prior art. The invention improves the light absorption capability in the near infrared band. LaFeO 3 As a perovskite (ABO) 3 ) The type composite oxide has a melting point of 1900 ℃, has good high-temperature thermal stability, and has excellent physical and chemical properties, so that the type composite oxide is widely applied to various fields such as solid electrolyte, solid oxide fuel cells, electrochemical devices and the like. According to the light absorption theory of the semiconductor, proper impurities are introduced into the substrate to form impurity energy levels corresponding to near infrared bands, so that the absorptivity of the semiconductor in the corresponding bands can be enhanced. Co doping in LFO results in a reduction of the bandgap, which can be useful in photovoltaic applications.
The above object of the present invention is achieved by the following technical solutions:
the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film consists of interdigitalThe electrode 5 and the coated perovskite nano film, the perovskite nano film is made of LaFeO 3 Perovskite nanocrystalline is used as a matrix material, and LaFeO is doped through Co ions 3 The Fe site of the perovskite nanocrystal is obtained.
The interdigital electrode 5 consists of a PET flexible substrate, a metal layer and an electrode layer.
The metal layer is a Cu electrode, and the thickness of the metal layer is 6 mu m.
The electrode layer is an Au electrode, and the thickness of the electrode layer is 1 mu m.
The doping concentration of the cobalt ions is 1-3 mol%.
The cobalt ion-doped lanthanum iron cobaltate nano material has small single crystal grain size, and the crystals are closely arranged, have more smaller gaps and are flaky.
The invention also aims to provide a preparation method of the infrared photoelectric detector based on the cobalt ion doped lanthanum iron cobaltate nanocrystal, which comprises the following steps of firstly synthesizing the cobalt ion doped lanthanum calcium cobaltate nanomaterial by a sol-gel method:
(1) Preparation of lanthanum ferrite perovskite nano material
Preparing a lanthanum ferrite nano material by a hydrothermal method: at room temperature, firstly, weighing 0.5mol of lanthanum nitrate hexahydrate and 0.5mol of ferric nitrate nonahydrate, dissolving the lanthanum nitrate hexahydrate and the ferric nitrate nonahydrate into 10-20ml of deionized water to form a mixed solution, and magnetically stirring the mixed solution at room temperature for 5-7min to fully dissolve the mixed solution; weighing citric acid in another beaker, fully dissolving the citric acid in 10-20ml deionized water, dripping the obtained citric acid solution into a mixed solution of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate, and magnetically stirring for 30min to obtain a yellow transparent solution; placing the yellow solution in an ultrasonic cleaner for continuous cleaning for 30 minutes, placing the cleaned solution into a 50ml reaction kettle, and then placing the reaction kettle into an electric heating constant-temperature drying box for drying; cooling the reaction kettle to room temperature, centrifuging the reaction product by using a centrifuge, and washing 6~8 times by using absolute ethyl alcohol and deionized water; filtering the supernatant to obtain a precipitate; placing the precipitate in a glassware, placing in a drying box, and drying at 80 deg.C for 12 hr to obtain lanthanum ferrite nanomaterial;
(2) Preparation of cobalt ion doped iron lanthanum cobaltate nano material
Preparing the iron-cobalt lanthanum perovskite nano material by adopting a sol-gel method: adding La (NO) 3 ) 3 ·6H 2 O、Co(NO 3 ) 2 •6H 2 O and Fe (NO) 3 ) 3 ·9H 2 Dissolving O in 30-40ml of deionized water; and (3) performing ultrasonic treatment at room temperature for 5 to 7min, adding citric acid according to the mass ratio of the total mass of the medicine to the citric acid of 1.2, and stirring at room temperature for 15 to 20min to obtain a uniform mixed solution. Then adding 5-10g of polyethylene glycol 2000 into the mixed solution, stirring the mixed solution on a magnetic stirrer heated to 70-80 ℃ to form viscous reddish brown gel, and aging the gel for 24 hours at room temperature; transferring the gel to an electrothermal constant-temperature drying oven for drying; and putting the obtained product into a muffle furnace, presintering for 1-3 hours at 400 ℃, and sintering for 1-3 hours at 600 ℃ to obtain the cobalt-doped lanthanum iron cobaltate nano material.
(3) Preparing an infrared photoelectric detector:
putting 2g to 5g of cobalt-doped lanthanum iron cobaltate nano material into an agate mortar, grinding for 4~5 hours, adding deionized water and absolute ethyl alcohol, fully grinding, and preparing into a pasty material; and sequentially putting the interdigital electrode into acetone, ethanol and deionized water, performing ultrasonic multi-washing cleaning for 5min at room temperature, and drying in an oven. And then, spin-coating the pasty material on the interdigital electrode to form a uniform film, and then placing the uniform film in a constant-temperature drying box at 40-45 ℃ for drying to obtain the cobalt ion-doped lanthanum iron cobaltate ultraviolet photoelectric detector.
Further, the reaction kettle in the step (1) is placed into an electric heating constant temperature drying oven for drying, the temperature in the drying oven is uniformly raised from 20 ℃ to 180 ℃ at a speed of 4 ℃/min, and the reaction kettle is heated at a constant temperature of 180 ℃ for 24 hours.
Further, the gel in the step (2) is transferred to an electrothermal constant-temperature drying oven for drying, the temperature in the drying oven is uniformly raised from 20 ℃ to 90 ℃ at a speed of 4 ℃/min, and the gel is heated at a constant temperature of 90 ℃ for 12 to 24 hours.
Further, in the step (3), the number of pairs of interdigital electrodes is 30, the line width is 50 μm, and the line distance is 50 μm.
The invention has the beneficial effects that: the perovskite optical detector prepared by the method has the advantages of simple structure, simple preparation process, low production cost, no need of expensive instruments and equipment and the like. The LaFeO is greatly improved by the film sensitive material obtained by doping the cobalt ions in the lanthanum ferrite 3 The light absorption intensity in the infrared region increases the electrical properties of perovskite, reduces surface defects and improves carrier mobility. The cobalt ion can greatly improve LaFeO 3 The light absorption intensity in the near infrared region, and the electrical properties of the perovskite can be enhanced. When Fe 3+ Is made of low-price Co 2+ After substitution, fe 3+ Must partially convert into Fe 4 + To compensate for the lack of positive charge, which lowers the activation energy of electron transfer and improves electron conductivity, and for charge compensation, oxygen vacancies, which are transport carriers (carriers) of oxygen ions of the perovskite material, are formed, resulting in an increase in conductivity. The existence of the local built-in electric field influences the transmission of internal carriers, promotes the separation of electrons and holes, and improves the sensitivity of the photoelectric detector. The Co ions are doped, the moving distance of a conduction band to the low-energy level direction is larger than the downward moving distance of a valence band, the forbidden band width is reduced from 3.1847eV to 1.722eV, the system bandwidth is reduced, the free carrier absorption of the material is improved, and the absorption performance of the material to infrared waves is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without limiting the invention.
Fig. 1 is a schematic structural diagram of an infrared photodetector according to the present invention;
FIG. 2 shows LaFeO in accordance with an embodiment of the present invention 3 Transmission electron microscopy images of perovskite nanocrystals;
FIG. 3 shows a Co-doped LaCo layer according to an embodiment of the present invention 0.1 Fe 0.9 O 3 Transmission electron microscopy images of perovskite nanocrystals;
FIG. 4 shows LaFeO obtained in the example of the present invention 3 And LaCo 0.1 Fe 0.9 O 3 XRD pattern of the nanomaterial;
FIG. 5 shows LaFeO obtained in the example of the present invention 3 And LaCo 0.1 Fe 0.9 O 3 An enlarged XRD main diffraction peak of the nano material;
fig. 6 is an infrared light absorption curve of the infrared photodetector manufactured in the embodiment of the present invention.
In the figure: 1. a PET flexible substrate; 2. a Cu electrode; 3. an Au electrode; 4. the cobalt-doped iron-lanthanum cobaltate nano film comprises a cobalt-doped iron-lanthanum cobaltate nano film, 5 and interdigital electrodes.
Detailed Description
The details of the present invention and its embodiments are further described below with reference to the accompanying drawings.
Referring to fig. 1 to 6, in the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film of the invention, co ion-doped LaFeO is adopted 3 Perovskite nanocrystals are used as matrix materials. The lanthanum iron cobaltate nano film material obtained by doping cobalt ions in lanthanum ferrite has small single crystal grain size, compact crystal arrangement, more and smaller gaps, reduced surface defects, improved carrier mobility, increased electrical properties of perovskite and greatly improved LaFeO 3 Light absorption intensity in the infrared region. The infrared photoelectric detector prepared by the preparation method has the advantages of simple structure, simple preparation process, low production cost, no need of expensive instruments and equipment and the like.
The infrared photoelectric detector based on the cobalt-doped iron lanthanum cobaltate nano film consists of an interdigital electrode 5 and a perovskite nano film coated on the interdigital electrode 5, wherein the perovskite nano film is formed by LaFeO 3 Perovskite nanocrystalline is used as a matrix material and is doped with LaFeO through cobalt ions 3 The Fe site of the perovskite nanocrystal is used for obtaining the cobalt-doped iron lanthanum cobaltate nano film 4.
The interdigital electrode 5 consists of a PET flexible substrate 1, a metal layer (a Cu electrode 2 with the thickness of 6 mu m) and an electrode layer (an Au electrode 3 with the thickness of 1 mu m).
The cobalt ion-doped lanthanum iron cobaltate nano material has small single crystal grain size, and the crystals are closely arranged, have more smaller gaps and are in a scaly shape. The whole gap of the film material is small and dense, which is beneficial to the absorption of infrared light.
The perovskite nanocrystal has adjustable band gap, high carrier mobility, easy processing and low cost, and is proved to be a material of a high-sensitivity ultraviolet-visible-near infrared photoelectric detector. At present, trivalent lanthanide ions with unique photoelectric properties have been successfully doped into perovskite nanocrystals or thin films, greatly improving the photoelectric properties of perovskites by eliminating deep defects and improving the film quality of the perovskite material.
The invention relates to a preparation method of an infrared photoelectric detector based on cobalt ion doped lanthanum iron cobaltate nanocrystals, which comprises the following steps:
(1) Preparation of lanthanum ferrite perovskite nano film material
Preparing a lanthanum ferrite nano material by a hydrothermal method: at room temperature, firstly, 0.5mol of lanthanum nitrate hexahydrate and 0.5mol of ferric nitrate nonahydrate are weighed and dissolved in 10-20ml of deionized water to form a mixed solution, and the mixed solution is magnetically stirred for 5-7min at room temperature to be fully dissolved; weighing citric acid in another beaker, fully dissolving the citric acid in 10-20ml deionized water, dripping the obtained citric acid solution into a mixed solution of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate, and magnetically stirring for 30min to obtain a yellow transparent solution; placing the yellow solution in an ultrasonic cleaner for continuous cleaning for 30 minutes, placing the cleaned solution into a 50ml reaction kettle, and then placing the reaction kettle into an electric heating constant-temperature drying box for drying; cooling the reaction kettle to room temperature, centrifuging the reaction product by using a centrifuge, and washing 6~8 times by using absolute ethyl alcohol and deionized water; filtering the supernatant to obtain a precipitate; placing the precipitate in a glassware, placing in a drying box, and drying at 80 deg.C for 12 hr to obtain lanthanum ferrite nanomaterial;
(2) Preparation of cobalt ion doped lanthanum iron cobaltate nano film material
Preparing the iron lanthanum cobaltite perovskite nano material by adopting a sol-gel method: adding La (NO) 3 ) 3 ·6H 2 O、Co(NO 3 ) 2 •6H 2 O and Fe (NO) 3 ) 3 ·9H 2 Dissolving O in 30-40ml of deionized water; and (3) performing ultrasonic treatment at room temperature for 5 to 7min, adding citric acid according to the mass ratio of the total mass of the medicine to the citric acid of 1.2, and stirring at room temperature for 15 to 20min to obtain a uniform mixed solution. Then adding 5-10g of polyethylene glycol 2000 into the mixed solution, stirring the mixed solution on a magnetic stirrer heated to 70-80 ℃ to form a viscous reddish brown gel, and aging the gel for 24 hours at room temperature; transferring the gel to an electrothermal constant-temperature drying oven for drying; and putting the obtained product into a muffle furnace, presintering for 1-3 hours at 400 ℃, and sintering for 1-3 hours at 600 ℃ to obtain the cobalt-doped lanthanum iron cobaltate nano material.
(3) Preparing an infrared photoelectric detector:
placing 2g to 5g of cobalt-doped lanthanum iron cobaltate nanomaterial into an agate mortar, grinding for 4~5 hours, adding deionized water and absolute ethyl alcohol, fully grinding, and preparing into a paste material; and sequentially putting the interdigital electrode into acetone, ethanol and deionized water, performing ultrasonic multi-washing cleaning for 5min at room temperature, and drying in an oven. And then, spin-coating the pasty material on the interdigital electrode to form a uniform film, and then placing the uniform film in a constant-temperature drying box at 40-45 ℃ for drying to obtain the cobalt ion-doped lanthanum iron cobaltate ultraviolet photoelectric detector.
Further, the reaction kettle in the step (1) is placed into an electric heating constant temperature drying oven for drying, the temperature in the drying oven is uniformly raised from 20 ℃ to 180 ℃ at a speed of 4 ℃/min, and the reaction kettle is heated at a constant temperature of 180 ℃ for 24 hours.
Further, the gel in the step (2) is transferred to an electrothermal constant-temperature drying oven for drying, the temperature in the drying oven is uniformly raised from 20 ℃ to 90 ℃ at a speed of 4 ℃/min, and the gel is heated at a constant temperature of 90 ℃ for 12 to 24 hours.
Further, in the step (3), the pairs of interdigital pairs of the used interdigital electrodes are 30 pairs, the line width is 50 μm, and the line distance is 50 μm.
The embodiment is as follows:
the invention relates to a preparation method of an infrared photoelectric detector based on cobalt ion doped lanthanum iron cobaltate nanocrystals, which comprises the following steps of firstly synthesizing a cobalt ion doped lanthanum calcium cobaltate nano material by a sol-gel method:
step (1), preparation of lanthanum ferrite perovskite nano film material
Preparing a lanthanum ferrite nano material by a hydrothermal method: at room temperature, firstly, 0.5mol of lanthanum nitrate hexahydrate and 0.5mol of ferric nitrate nonahydrate are weighed and dissolved in 10-20ml of deionized water to form a mixed solution, and the mixed solution is magnetically stirred for 5-7min at room temperature to be fully dissolved; weighing citric acid in another beaker, fully dissolving the citric acid in 10-20ml deionized water, dripping the obtained citric acid solution into a mixed solution of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate, and magnetically stirring for 30min to obtain a yellow transparent solution; placing the yellow solution in an ultrasonic cleaner for continuous cleaning for 30 minutes, putting the cleaned solution into a 50ml reaction kettle, and then placing the reaction kettle into an electric heating constant temperature drying box for drying; cooling the reaction kettle to room temperature, centrifuging the reaction product by a centrifuge, and washing 6~8 times by using absolute ethyl alcohol and deionized water; filtering the supernatant to obtain a precipitate; placing the precipitate in a glassware, placing the glassware in a drying box, setting the temperature at 80 ℃, and drying for 12 hours to obtain a lanthanum ferrite nano material;
step (2), preparation of cobalt ion-doped lanthanum iron cobaltate nano film material
Preparing the iron lanthanum cobaltite perovskite nano material by adopting a sol-gel method: 0.65g of La (NO) 3 ) 3 ·6H 2 O, 0.05g of Co (NO) 3 ) 2 •6H 2 O and 0.55g Fe (NO) 3 ) 3 ·9H 2 Dissolving O in 30ml of deionized water; performing ultrasonic treatment for 10min at room temperature, adding 1.49g of citric acid according to the mass ratio of the total mass of the medicine to the citric acid being 1. Then adding 7g of polyethylene glycol 2000 into the mixed solution, heating to 80 ℃, stirring on a magnetic stirrer to form viscous reddish brown gel, and aging for 24 hours at room temperature; transferring the gel to an electrothermal constant-temperature drying oven for drying; and putting the obtained product into a muffle furnace, presintering for 2 hours at 400 ℃, and sintering for 2 hours at 600 ℃ to obtain the lanthanum ferrite nano material.
Then, the preparation of the photoelectric detector comprises the following steps:
step (3), 2g of cobalt-doped lanthanum iron cobaltate nano material is put into an agate mortar, and after grinding for 5 hours, deionized water and absolute ethyl alcohol are added, and the mixture is fully ground and prepared into paste; and sequentially putting the interdigital electrode into acetone, ethanol and deionized water, performing ultrasonic multi-washing cleaning for 5min at room temperature, and drying in an oven. And then, spin-coating the pasty lanthanum iron cobaltate nano material on the interdigital electrode to form an even film, and then placing the film in a constant-temperature drying box at 40 ℃ for drying to obtain the cobalt ion doped lanthanum iron cobaltate ultraviolet photoelectric detector.
Further, in the step (1), the reaction kettle is placed into an electric heating constant temperature drying oven for drying, the temperature in the drying oven is uniformly raised from 20 ℃ to 180 ℃ at a speed of 4 ℃/min, and the reaction kettle is heated at a constant temperature of 180 ℃ for 24 hours.
Further, in the step (2), the gel is transferred to an electric heating constant temperature drying oven for drying, the temperature in the drying oven is uniformly raised from 20 ℃ to 110 ℃ at a speed of 4 ℃/min, and the gel is heated at the constant temperature of 110 ℃ for 12 hours.
Further, in the step (3), the used interdigital electrode takes PET flexibility as a substrate, the metal layer is a Cu electrode, the electrode layer is an Au electrode, the number of pairs of interdigital pairs is 30, the line width is 50 mu m, and the line distance is 50 mu m.
FIG. 2 shows LaFeO prepared in the examples 3 And (3) carrying out transmission electron microscope determination: the transmission electron microscopy was tested using a Hitachi H-8100IV transmission electron microscope at an acceleration voltage of 200 kV. Transmission electron microscope images show that LaFeO3 particles have obvious agglomeration and are in a random spherical shape, and the agglomeration bodies are loosely arranged and have no layered structure.
FIG. 3 shows LaCo prepared in the examples 0.1 Fe 0.9 O 3 The Co ion-doped single crystal is small in grain size, compact in crystal arrangement, large in number of small gaps and scaly in shape.
FIG. 4 shows LaFeO prepared in the examples 3 And LaCo 0.1 Fe 0.9 O 3 The X-ray diffraction pattern of the nanocrystalThe obtained XRD pattern, X-ray diffraction pattern, was recorded as a thin film on a Bruker AXS D8 diffractometer using alpha radiation (λ = 1.54178). LaFeO can be seen from the figure 3 And LaCo 0.1 Fe 0.9 O 3 The relative intensity of the diffraction peak is high, no other miscellaneous peak appears, and the crystal belongs to an orthorhombic perovskite type structure.
FIG. 5 shows LaFeO prepared in the examples 3 And LaCo 0.1 Fe 0.9 O 3 The amplified image of the nanocrystalline from the main diffraction peak can find that the main peak of the doped material is shifted. LaFeO 3 The middle Fe is mainly +3 valence, fe 3+ Has a radius of 0.0645nm 3+ Has a radius of 0.0545nm, and the unit cell volume becomes smaller after doping.
Fig. 6 is a graph of the spectral absorbance of an infrared photodetector made in an example of the invention. Indicating that LaFeO 3 The infrared absorption at the wave band of 200 to 2500nm is near 550nm, and the average absorption rate is 66.56%. LaCo 0.1 Fe 0.9 O 3 The infrared absorption at the wave band of 200-2500 nm is near 700nm, and the average absorption rate is 83.14%. The data show that the cobalt ion doped lanthanum iron cobaltate detector improves the absorption rate of infrared waves.
The above description is only a preferred example of the present invention and is not intended to limit the present invention, and various modifications and changes may be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement and the like of the present invention shall be included in the protection scope of the present invention.

Claims (9)

1. A preparation method of an infrared photoelectric detector based on a cobalt-doped lanthanum iron cobaltate nano film is characterized by comprising the following steps: the infrared photoelectric detector consists of an interdigital electrode (5) and a perovskite nano film coated on the interdigital electrode (5), wherein the perovskite nano film is LaFeO 3 Perovskite nanocrystalline is used as a matrix material and is doped with LaFeO through cobalt ions 3 The Fe site of the perovskite nanocrystal is obtained; the preparation method firstly synthesizes the cobalt ion doped iron-lanthanum cobaltate perovskite nano film by a sol-gel method, and comprises the following steps:
step (1), preparation of lanthanum ferrite perovskite nano material
Preparing a lanthanum ferrite nano material by a hydrothermal method: at room temperature, firstly, 0.5mol of lanthanum nitrate hexahydrate and 0.5mol of ferric nitrate nonahydrate are weighed and dissolved in 10-20ml of deionized water to form a mixed solution, and the mixed solution is magnetically stirred for 5-7min at room temperature to be fully dissolved; weighing citric acid in another beaker, fully dissolving the citric acid in 10-20ml deionized water, dripping the citric acid solution into a mixed solution of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate, and magnetically stirring for 30min to obtain a yellow transparent solution; placing the yellow solution in an ultrasonic cleaner for continuous cleaning for 30 minutes, putting the cleaned solution into a 50ml reaction kettle, and then placing the reaction kettle into an electric heating constant temperature drying box for drying; cooling the reaction kettle to room temperature, centrifuging the reaction product by using a centrifuge, and washing 6~8 times by using absolute ethyl alcohol and deionized water; filtering the supernatant to obtain a precipitate; placing the precipitate in a glass ware, placing the glass ware in a drying box, setting the temperature at 80 ℃, and drying for 12 hours to obtain the lanthanum ferrite nano material;
step (2), preparation of cobalt ion-doped lanthanum iron cobaltate nano material
Preparing the iron lanthanum cobaltite perovskite nano material by adopting a sol-gel method: mixing La (NO) 3 ) 3 ·6H 2 O、Co(NO 3 ) 2 •6H 2 O and Fe (NO) 3 ) 3 ·9H 2 Dissolving O in deionized water respectively; performing ultrasonic treatment at room temperature for 5 to 7min, adding citric acid according to the mass ratio of the total mass of the medicine to the citric acid of 1.2, and stirring at room temperature for 15 to 20min to obtain a uniform mixed solution; then adding 5-10g of polyethylene glycol 2000 into the mixed solution, stirring on a magnetic stirrer heated to 70-80 ℃ to form viscous reddish brown gel, and aging at room temperature for 24 hours; transferring the gel to an electrothermal constant-temperature drying oven for drying; putting the obtained product into a muffle furnace, presintering for 1-3 hours at 400 ℃, and sintering for 1-3 hours at 600 ℃ to obtain a cobalt-doped lanthanum iron cobaltate nano material;
step (3) preparation of photoelectric detector
Putting 2g to 5g of cobalt-doped lanthanum iron cobaltate nano material into an agate mortar, grinding for 4~5 hours, adding deionized water and absolute ethyl alcohol, fully grinding, and preparing into a pasty material; sequentially putting the interdigital electrode into acetone, ethanol and deionized water, performing ultrasonic multi-washing cleaning for 5min at room temperature, and drying in an oven; and then, spin-coating the pasty material on the interdigital electrode to form a uniform film, and then placing the uniform film in a constant-temperature drying box at 40-45 ℃ for drying to obtain the cobalt ion-doped lanthanum iron cobaltate infrared photoelectric detector.
2. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to claim 1, which is characterized in that: the interdigital electrode (5) consists of a PET flexible substrate, a metal layer and an electrode layer.
3. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to claim 2, wherein the method comprises the following steps: the metal layer is a Cu electrode (2) and is 6 mu m thick.
4. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to claim 2, wherein the method comprises the following steps: the electrode layer is an Au electrode (3) and is 1 mu m thick.
5. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to claim 1, which is characterized in that: the doping concentration of the cobalt ions is 1-3 mol%.
6. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film as claimed in claim 1, wherein the method comprises the following steps: the cobalt ion-doped lanthanum iron cobaltate nano material has small single crystal grain size, compact crystal arrangement, scaly shape and small gaps.
7. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to claim 1, which is characterized in that: and (2) putting the reaction kettle into an electric heating constant-temperature drying oven for drying in the step (1), uniformly heating the temperature in the drying oven from 20 ℃ to 180 ℃ at a constant speed of 4 ℃/min, and heating at the constant temperature of 180 ℃ for 24 hours.
8. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to claim 1, which is characterized in that: and (3) transferring the gel to an electric heating constant-temperature drying oven for drying in the step (2), uniformly heating the temperature in the drying oven from 20 ℃ to 110 ℃ at a speed of 4 ℃/min, and heating at the constant temperature of 90 ℃ for 12 hours.
9. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to claim 1, which is characterized in that: in the interdigital electrode in the step (3), the number of pairs of interdigital pairs is 30, the line width is 50 mu m, and the line distance is 50 mu m.
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