CN107968135A - Non-refrigeration type infrared detector and preparation method thereof - Google Patents
Non-refrigeration type infrared detector and preparation method thereof Download PDFInfo
- Publication number
- CN107968135A CN107968135A CN201711195401.7A CN201711195401A CN107968135A CN 107968135 A CN107968135 A CN 107968135A CN 201711195401 A CN201711195401 A CN 201711195401A CN 107968135 A CN107968135 A CN 107968135A
- Authority
- CN
- China
- Prior art keywords
- layer
- absorbed layer
- cushion
- preparation
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005057 refrigeration Methods 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000010521 absorption reaction Methods 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 15
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 239000011669 selenium Substances 0.000 claims description 8
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052753 mercury Inorganic materials 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000007123 defense Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XOCUXOWLYLLJLV-UHFFFAOYSA-N [O].[S] Chemical compound [O].[S] XOCUXOWLYLLJLV-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- -1 polyethylene naphthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- YOXKVLXOLWOQBK-UHFFFAOYSA-N sulfur monoxide zinc Chemical compound [Zn].S=O YOXKVLXOLWOQBK-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of preparation method of non-refrigeration type infrared detector, it is characterised in that including providing a substrate；Make over the substrate and form first electrode layer；Made in the first electrode layer and form absorbed layer；Made on the absorbed layer and form cushion；Made on the cushion and form transparent electrode layer；Made on the transparent electrode layer and form the second electrode lay, the material of the absorbed layer is I B, II B, IV A, VI A doped p-type materials, and the material of the cushion is N-type semiconductor material.The embodiment of the invention discloses a kind of preparation method of non-refrigeration type infrared detector, its technique is simple, required equipment is simpler, can large area production, low manufacture cost, civil nature can be achieved, absorbed layer, the wavelength of expansible infrared absorption are in addition made using I B, II B, IV A, VI A doped p-type materials.
Description
Technical field
The present invention relates to field of photoelectric technology, more particularly to a kind of non-refrigeration type infrared detector and preparation method thereof.
Background technology
Infrared light is that human eye cannot observe directly, and wavelength is more than 760 nanometers, the electromagnetism between visible ray and microwave
Ripple.This infrared light is converted into the physical quantity that can be detected, it is common practice to convert it to quantitative electric signal.
Short-wave infrared detector is the important technology of modern national defense military affairs, is mainly observed easy to soldier in night, smog,
Short-wave infrared technology suffers from important effect in fields such as monitoring resource, environmental monitoring, night vision imaging, medical diagnosis.At present
Widely applied infrared detector technology includes refrigeration and two class of non-brake method, and wherein refrigeration mode is due to needing complicated refrigeration to set
It is standby, and cause systems bulky.Non-refrigeration type technology is started late, but is quickly grown, and wherein indium gallium arsenic type detector can be in room
The lower work of temperature, is widely applied to national defense and military fields.But due to its complex production process, defect tolerant degree is low, and price is held high
It is expensive, it can not also popularize civilian.
The content of the invention
In view of the shortcomings of the prior art, a kind of simple the present invention provides technique and lower-cost non-refrigeration type is red
The preparation method of outer optical detector and a kind of high non-refrigeration type infrared detector of absorptivity.
In order to realize above-mentioned purpose, present invention employs following technical solution：
One substrate is provided；
Make over the substrate and form first electrode layer；
Made in the first electrode layer and form absorbed layer；
Made on the absorbed layer and form cushion；
Made on the cushion and form transparent electrode layer；
Made on the transparent electrode layer and form the second electrode lay,
The material of the absorbed layer is I B-, II B-, IV A-, VI A doped p-type materials, and the material of the cushion is partly led for N-type
Body material.
Preferably, I B is copper, and II B is any one or two kinds any, IV A in zinc, cadmium and mercury
For at least one of tin and lead, VI A is selenium or tellurium.
Preferably, using vacuum evaporation process, hot evaporation process, electron beam coating process, sputtering technology and chemical gaseous phase
Any one technique in depositing operation makes in the first electrode layer forms the absorbed layer.
Preferably, after the step of forming absorbed layer is made in the first electrode layer, the preparation method further includes
The high temperature anneal is carried out to the absorbed layer.
Preferably, the method that the high temperature anneal is carried out to the absorbed layer specifically includes：
The absorption is placed in inert gas and reproducibility selenium atmosphere；
The absorbed layer is heated, the absorbed layer is increased to 450 DEG C from room temperature with predetermined heat speed,
And maintained for first scheduled time；
The absorbed layer is warming up to 480 DEG C~520 DEG C from 450 DEG C within second scheduled time, and maintains the 3rd to make a reservation for
Time；
By the absorbed layer cooled to room temperature.
Preferably, the scope of the predetermined heat speed is 3.5 DEG C/min~15 DEG C/min, and first scheduled time is
30 minutes, second scheduled time was 1 minute, and the 3rd scheduled time is 15 minutes.
Preferably, the thickness of the absorbed layer is 1 μm to 1.5 μm.
Preferably, using in chemical thought technique, electron beam coating process, sputtering technology, atom layer deposition process
Any one make to form the cushion in the absorbed layer.
Preferably, the transparent electrode layer includes resistive formation and Window layer, is made on the cushion and forms transparent electricity
The method of pole layer specifically includes：
Made on the cushion and form resistive formation；
Made on the resistive formation and form Window layer.
Present invention also offers a kind of non-refrigeration type infrared detector, including substrate；First on the substrate
Electrode layer；Absorbed layer in the first electrode layer；Cushion on the absorbed layer；On the cushion
Transparent electrode layer；And the second electrode lay on the transparent electrode layer, the material of the absorption is I B-, II B-, IV A-
VI A doped p-type materials, the material of the cushion is N-type semiconductor material.
The embodiment of the invention discloses a kind of preparation method of non-refrigeration type infrared detector, its technique is simple, cost
Cheap, non-refrigeration type infrared detector being made under relatively low bias additionally by this method can work, and extend infrared suction
The wavelength of receipts.
Brief description of the drawings
Figure 1A to Fig. 1 F is the technological process of the preparation method of the non-refrigeration type infrared detector of the embodiment of the present invention
Figure.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further described.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and do not have to
It is of the invention in limiting.
Figure 1A to Fig. 1 F shows a kind of preparation method flow of non-refrigeration type infrared detector of the embodiment of the present invention
Figure, it includes the following steps：
Step 1：With reference to Figure 1A, there is provided a substrate 10；
Specifically, substrate 10 can use rigid substrate or flexible substrate, wherein rigid substrate can use glass, ceramics,
The substrate of the materials such as the metal of quartz and poorly conductive, flexible substrate can use polymer substrate, and PI (polyimides), PET are (poly-
Ethylene glycol terephthalate), the substrate of the material such as PEN (polyethylene naphthalate), the size of substrate 10 is according to reality
Designed, designed is needed, is not limited in the present embodiment.
Step 2：With reference to Figure 1B, make form first electrode layer 20 over the substrate 10；
As the presently preferred embodiments, substrate 10 elects glass substrate as, and first electrode layer 20 is preferably metal molybdenum electrode, is preferably adopted
Molybdenum electrode is grown on a glass substrate with electron beam coating process and forms first electrode layer 20, and the thickness of first electrode layer 20 is preferred
For 1 μm, first electrode layer 20 is used to be electrically connected extraneous test equipment, and detector is measured infrared signal is transmitted to extraneous instrument
In.Certainly in other embodiments, can also be sunk using sputtering technology, chemical vapor deposition method and Metallo-Organic Chemical Vapor
Any one in product technique deposits to molybdenum electrode in glass substrate, and in addition first electrode layer 20, which also has, selects other metals electric
Pole, the thickness range of first electrode layer 20 is 0.8 μm to 1.3 μm.
Step 3：With reference to Fig. 1 C, made in first electrode layer 20 and form absorbed layer 30；
Specifically, the material of absorbed layer 30 is p-type semiconductor material, for absorbing infrared light, it is preferred to use I B-, II B- IV
VI A doped p-type materials of A-, wherein I B is preferably copper (Cu), II B be in zinc (Zn), cadmium (Cd) and mercury (Hg) any one or
Any two kinds of combinations of person, IV A is at least one of tin (Sn) and lead (Pb), and VI A is selenium (Se) or tellurium (Te).Using above-mentioned
Absorbed layer 30 made of P-type material has wider infrared Absorption wavelength, is conducive to manufacture high-performance detector.As preferred
Embodiment, II B are preferably cadmium and zinc, and IV A is preferably tin, and VI A is preferably selenium, and the chemical formula of the material of absorbed layer 30 is represented by
Cu2CdxZn1-xSnSe4, wherein each subscript represents the ratio of each component, the value range of x is 0 to 1, including endpoint value, its
In by regulating and controlling the ratio of cadmium and zinc, to regulate and control the energy band of absorbed layer 30, so as to control absorption ripple of the absorbed layer 30 to infrared light
It is long.
In other embodiments, II B is preferably cadmium and zinc, and IV A is preferably tin, and VI A is preferably tellurium, the material of absorbed layer 30
The chemical formula of material is represented by Cu2CdxZn1-xSnTe4, wherein each subscript represents the ratio of each component, the value range of x is
0 to 1, including endpoint value.
Further, vacuum evaporation process, hot evaporation process, electron beam coating process, sputtering technology and chemistry can be used
Any one technique in gas-phase deposition deposits p-type polycrystalline Copper thin film in first electrode layer 20 and forms absorbed layer 30, its
Middle sedimentation time is 45min, and the thickness of absorbed layer 30 is preferably 1.5 μm, and the thickness of certain absorbed layer 30 can also be other numerical value,
In the range of 1 μm to 1.5 μm.
Further, in order to enable the alloy material crystallization of absorbed layer 30, the deposit absorbent layer 30 in first electrode layer 20
Afterwards, the high temperature anneal is carried out to absorbed layer 30, specifically comprised the following steps：
(S1) absorbed layer 30 is placed in inert gas and reproducibility selenium atmosphere；(S2) absorbed layer 30 is carried out at heating
Reason, makes absorbed layer 30 be increased to 450 DEG C from room temperature by predetermined heat speed；And maintained for first scheduled time；(S3) it is pre- second
Fix time it is interior absorbed layer 30 is warming up to 480 DEG C~520 DEG C from 450 DEG C, and maintained for the 3rd scheduled time；(S4) by absorbed layer 30
Cooled to room temperature.Wherein, inert gas can be selected argon gas, helium etc., the scope of predetermined heat speed for 3.5 DEG C/min~
15℃/min.As the presently preferred embodiments, during being slowly heated to absorbed layer 30, the rate of heat addition in first time period is
15 DEG C/min, the rate of heat addition in second time period is 3.5 DEG C/min, and the total time of heating is 75min.As being preferable to carry out
Example, first scheduled time are 30 minutes, and second scheduled time was 1 minute, and the 3rd scheduled time was 15 minutes.
Step 4：With reference to Fig. 1 D, made on absorbed layer 30 and form cushion 40；
Specifically, cushion 40 is N-type semiconductor material, can use cadmium sulfide, mix zinc oxysulfide, zinc selenide, mixes oxygen sulphur
Change any one in indium and indium trisulfide or a variety of making formation, cushion 40 forms PN junction with absorbed layer 30, extraneous
When Infrared irradiation absorbed layer 30 and cushion 40, electromotive force is formed between cushion 40 and absorbed layer 30, will both and the external world
Circuit communication, then output current, the power by measuring the electric current can detect the power of infrared light to PN junction.
As the presently preferred embodiments, cushion 40 is preferably cadmium sulfide, using chemical thought technique on absorbed layer 30
Deposit thickness is 50 μm of cadmium sulfide layer, forms cushion 40, and sedimentation time is 9.5 minutes.Certainly in other embodiments,
Any one in electron beam coating process, sputtering technology, atom layer deposition process can also be used in the making formation of absorbed layer 30
Cushion 40, the thickness of cushion 40 can also choose other numerical value, in the range of 50 μm to 60 μm.
Step 5：With reference to Fig. 1 E, made on cushion 40 and form transparent electrode layer 50；
Specifically, transparent electrode layer 50 includes resistive formation and Window layer, and resistive formation can use intrinsic zinc oxide, and Window layer can
Using any one in Al-Doped ZnO, Mg-doping ZnO, boron-doping zinc oxide, tin indium oxide and fluorine doped tin oxide or a variety of
Material makes to be formed.Preferably, using the first deposition intrinsic zinc oxide on cushion 40 of sputtering technology, resistive formation is formed, then
Al-Doped ZnO is deposited on resistive formation using sputtering technology, forms Window layer, the wherein thickness range of resistive formation is 50 nanometers
To 80 nanometers, the thickness range of Window layer is 200 nanometers to 1 μm.Certainly in other embodiments, can also electron beam be used to plate
Membrane process to form resistive formation and Window layer to make successively.Resistive formation can reduce leakage current generation, and increase polycrystal film is in parallel
Resistance, available for the electronics produced in collection PN junction, its electric current exported is more concentrated.Window layer has good electricity
Performance and optical property, that is, high transparency, and low resistance, for being passed through for extraneous infrared light, make it be radiated at absorbed layer 30 gentle
Rush on layer 40.
Step 6：With reference to Fig. 1 F, made on transparent electrode layer 50 and form the second electrode lay 60；
Specifically, the making material of the second electrode lay 60 is preferably metal electrode, it is preferred to use electron beam coating process exists
Nickel alumin(i)um alloy material is deposited on transparent electrode layer 50 and forms the second electrode lay 60, the second electrode lay 60 is used to be electrically connected extraneous test
Instrument, measures infrared signal by detector and is transmitted in extraneous instrument.Further, the second electrode lay 60 is located at transparent electrode layer
50 side so that the second electrode lay 60 and the overlapping area of absorbed layer 30 are as small as possible, can so reduce the second electrode lay 60
Absorption to infrared light.When detecting infrared light, first electrode layer 20 and the second electrode lay 60 are electrically connected with external circuitry at the same time
Connect, electric current is just exported into external circuitry in such cushion 40 and absorbed layer 30, you can detects the power of infrared light.
The embodiment of the present invention, which additionally provides, a kind of is made the non-refrigeration type infrared light detecting to be formed of above-mentioned preparation method
Device, it includes substrate 10；First electrode layer 20 on substrate 10；Absorbed layer 30 in first electrode layer 20；It is arranged on
Cushion 40 on absorbed layer 30；Transparent electrode layer 50 on cushion 40；And on transparent electrode layer 50
Two electrode layers 60, the material of absorbed layer 30 is I B-, II B-, IV A-, VI A doped p-type materials, and the material of cushion 40 is partly led for N-type
Body material.
The embodiment of the invention discloses a kind of preparation method of non-refrigeration type infrared detector, its technique is simple, required
Equipment it is simpler, can large area production, low manufacture cost is, it can be achieved that civil nature, using I B-, II B-, IV A-, VI A doped p-type materials
Expect, to make absorbed layer, to have widened the infrared Absorption wavelength of detector.
The above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (10)
- A kind of 1. preparation method of non-refrigeration type infrared detector, it is characterised in that including：One substrate (10) is provided；Made on the substrate (10) and form first electrode layer (20)；Made in the first electrode layer (20) and form absorbed layer (30)；Made on the absorbed layer (30) and form cushion (40)；Made on the cushion (40) and form transparent electrode layer (50)；Made on the transparent electrode layer (50) and form the second electrode lay (60),The material of the absorbed layer (30) is I B-, II B-, IV A-, VI A doped p-type materials, and the material of the cushion (40) is N-type Semi-conducting material.
- 2. the preparation method of non-refrigeration type infrared detector according to claim 1, it is characterised in that I B is Copper, II B be in zinc, cadmium and mercury any one or it is two kinds any, IV A is at least one of tin and lead, institute It is selenium or tellurium to state VI A.
- 3. the preparation method of non-refrigeration type infrared detector according to claim 1 or 2, it is characterised in that using true Any one work in empty evaporation process, hot evaporation process, electron beam coating process, sputtering technology and chemical vapor deposition method Skill makes in the first electrode layer (20) and forms the absorbed layer (30).
- 4. the preparation method of non-refrigeration type infrared detector according to claim 1, it is characterised in that described first After making the step of forming absorbed layer (30) on electrode layer (20), the preparation method further include to the absorbed layer (30) into Row the high temperature anneal.
- 5. the preparation method of non-refrigeration type infrared detector according to claim 4, it is characterised in that to the absorption The method that layer (30) carries out the high temperature anneal specifically includes：The absorbed layer (30) is placed in inert gas and reproducibility selenium atmosphere；The absorbed layer (30) is heated, the absorbed layer (30) is increased to predetermined heat speed from room temperature 450 DEG C, and maintained for first scheduled time；The absorbed layer (30) is warming up to 480 DEG C~520 DEG C from 450 DEG C within second scheduled time, and maintains the 3rd to make a reservation for Time；By the absorbed layer (30) cooled to room temperature.
- 6. the preparation method of non-refrigeration type infrared detector according to claim 5, it is characterised in that described to make a reservation for add The scope of hot speed is 3.5 DEG C/min~15 DEG C/min, and first scheduled time is 30 minutes, and second scheduled time is 1 minute, the 3rd scheduled time was 15 minutes.
- 7. the preparation method of non-refrigeration type infrared detector according to claim 1 or 2, it is characterised in that the suction The thickness for receiving layer (30) is 1 μm to 1.5 μm.
- 8. the preparation method of non-refrigeration type infrared detector according to claim 1, it is characterised in that using chemical water Any one in depositing operation, electron beam coating process, sputtering technology, atom layer deposition process is bathed in the absorbed layer (30) Making forms the cushion (40).
- 9. the preparation method of non-refrigeration type infrared detector according to claim 1, it is characterised in that the transparent electricity Pole layer (50) include resistive formation and Window layer, on the cushion (40) making formed transparent electrode layer (50) method it is specific Including：Made on the cushion (40) and form resistive formation；Made on the resistive formation and form Window layer.
- A kind of 10. non-refrigeration type infrared detector, it is characterised in that including：Substrate (10)；First electrode layer (20) on the substrate (10)；Absorbed layer (30) in the first electrode layer (20)；Cushion (40) on the absorbed layer (30)；Transparent electrode layer (50) on the cushion (40)；And the second electrode lay (60) on the transparent electrode layer (50),The material of the absorbed layer (30) is I B-, II B-, IV A-, VI A doped p-type materials, and the material of the cushion (40) is N-type Semi-conducting material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711195401.7A CN107968135B (en) | 2017-11-24 | 2017-11-24 | Non-refrigeration type infrared detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711195401.7A CN107968135B (en) | 2017-11-24 | 2017-11-24 | Non-refrigeration type infrared detector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107968135A true CN107968135A (en) | 2018-04-27 |
| CN107968135B CN107968135B (en) | 2019-10-11 |
Family
ID=61998445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711195401.7A Active CN107968135B (en) | 2017-11-24 | 2017-11-24 | Non-refrigeration type infrared detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107968135B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312836A (en) * | 2020-02-24 | 2020-06-19 | 京东方科技集团股份有限公司 | Photoelectric detector |
| CN111430483A (en) * | 2020-03-23 | 2020-07-17 | 深圳先进技术研究院 | Photoelectric detector, manufacturing method thereof and photoelectric detection system |
| CN111969081A (en) * | 2020-08-28 | 2020-11-20 | 深圳先进电子材料国际创新研究院 | Preparation method of near-infrared detector |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101944541A (en) * | 2009-07-08 | 2011-01-12 | 深圳先进技术研究院 | Thin-film photovoltaic cell and manufacturing method thereof |
| US8501526B2 (en) * | 2011-04-22 | 2013-08-06 | Alliance For Sustainable Energy, Llc | Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species |
| CN203659901U (en) * | 2013-11-28 | 2014-06-18 | 中国科学院上海硅酸盐研究所 | Annealing device for preparing chalcopyrite-type film solar cell absorption layer |
| US20150059855A1 (en) * | 2013-08-29 | 2015-03-05 | International Business Machines Corporation | Titanium incorporation into absorber layer for solar cell |
| WO2016120392A1 (en) * | 2015-01-30 | 2016-08-04 | Trinamix Gmbh | Detector for an optical detection of at least one object |
| US20170278994A1 (en) * | 2016-03-23 | 2017-09-28 | International Business Machines Corporation | Color tunable thin film photovoltaic devices |
-
2017
- 2017-11-24 CN CN201711195401.7A patent/CN107968135B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101944541A (en) * | 2009-07-08 | 2011-01-12 | 深圳先进技术研究院 | Thin-film photovoltaic cell and manufacturing method thereof |
| US8501526B2 (en) * | 2011-04-22 | 2013-08-06 | Alliance For Sustainable Energy, Llc | Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species |
| US20150059855A1 (en) * | 2013-08-29 | 2015-03-05 | International Business Machines Corporation | Titanium incorporation into absorber layer for solar cell |
| CN203659901U (en) * | 2013-11-28 | 2014-06-18 | 中国科学院上海硅酸盐研究所 | Annealing device for preparing chalcopyrite-type film solar cell absorption layer |
| WO2016120392A1 (en) * | 2015-01-30 | 2016-08-04 | Trinamix Gmbh | Detector for an optical detection of at least one object |
| US20170278994A1 (en) * | 2016-03-23 | 2017-09-28 | International Business Machines Corporation | Color tunable thin film photovoltaic devices |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312836A (en) * | 2020-02-24 | 2020-06-19 | 京东方科技集团股份有限公司 | Photoelectric detector |
| CN111312836B (en) * | 2020-02-24 | 2021-12-24 | 京东方科技集团股份有限公司 | Photoelectric detector |
| CN111430483A (en) * | 2020-03-23 | 2020-07-17 | 深圳先进技术研究院 | Photoelectric detector, manufacturing method thereof and photoelectric detection system |
| CN111969081A (en) * | 2020-08-28 | 2020-11-20 | 深圳先进电子材料国际创新研究院 | Preparation method of near-infrared detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107968135B (en) | 2019-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xu et al. | ZnO-based photodetector: from photon detector to pyro-phototronic effect enhanced detector | |
| Yang et al. | 28.3%-efficiency perovskite/silicon tandem solar cell by optimal transparent electrode for high efficient semitransparent top cell | |
| Cao et al. | High-performance UV–vis photodetectors based on electrospun ZnO nanofiber-solution processed perovskite hybrid structures | |
| Chen et al. | Schottky solar cells based on CsSnI3 thin-films | |
| Li et al. | Photodetectors based on inorganic halide perovskites: Materials and devices | |
| Cao et al. | Novel perovskite/TiO 2/Si trilayer heterojunctions for high-performance self-powered ultraviolet-visible-near infrared (UV-Vis-NIR) photodetectors | |
| CN110444618B (en) | Solar blind ultraviolet detector based on amorphous gallium oxide film and preparation method thereof | |
| CN104617180B (en) | A kind of graphene/boron nitride/zinc oxide ultraviolet detector and preparation method thereof | |
| CN107968135B (en) | Non-refrigeration type infrared detector and preparation method thereof | |
| Periasamy et al. | Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors | |
| CN109686844B (en) | Photosensitive sensor based on perovskite self-powered behavior | |
| CN109244246B (en) | Broadband photoelectric detector based on topological insulator bismuth selenide electrode | |
| Ilican et al. | XPS Studies of Electrodeposited Grown F‐Doped ZnO Rods and Electrical Properties of p‐Si/n‐FZN Heterojunctions | |
| CN102781867A (en) | Photovoltaic cell | |
| CN114702960B (en) | Infrared quantum dot layer and preparation method thereof, infrared detector and preparation method thereof | |
| CN105489694A (en) | Zinc oxide/silicon p-n heterojunction ultraviolet light detector and preparation method thereof | |
| Makhlouf et al. | Fabrication, temperature dependent current-voltage characteristics and photoresponse properties of Au/α-PbO2/p-Si/Al heterojunction photodiode | |
| CN108878576A (en) | Gallium oxide-based ultraviolet detector | |
| Makori et al. | Characterization of SnSe-CdO: Sn PN junction for solar cell applications | |
| Shan et al. | Improved responsivity of highly reproducible performance ZnO thin film flexible UV photodetectors by piezo-phototronic effect | |
| Chaoudhary et al. | Laser ablation fabrication of a p-nio/n-si heterojunction for broadband and self-powered UV–visible–nir photodetection | |
| Ohteki et al. | Electrical properties of ZnO: H films fabricated by RF sputtering deposition and fabrication of p-NiO/n-ZnO heterojunction devices | |
| Zhang et al. | Improving the performance of ultra-flexible perovskite photodetectors through cation engineering | |
| Lin et al. | Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors | |
| Cao et al. | Sensitive direct x-ray detectors based on the In–Ga–Zn–O/perovskite heterojunction phototransistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |