CN113193068A - Infrared photoelectric detector based on cobalt-doped lanthanum iron cobaltate nano film and manufacturing method thereof - Google Patents

Infrared photoelectric detector based on cobalt-doped lanthanum iron cobaltate nano film and manufacturing method thereof Download PDF

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CN113193068A
CN113193068A CN202110497169.2A CN202110497169A CN113193068A CN 113193068 A CN113193068 A CN 113193068A CN 202110497169 A CN202110497169 A CN 202110497169A CN 113193068 A CN113193068 A CN 113193068A
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仲志成
景昭君
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Jilin University
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Abstract

The invention relates to an infrared photoelectric detector based on a cobalt-doped lanthanum iron cobaltate nano film and a manufacturing method thereof, belonging to the technical field of inorganic semiconductor photoelectric detectors. The perovskite nano-film is formed by an interdigital electrode and a perovskite nano-film coated on the interdigital electrode, wherein the perovskite nano-film is LaFeO3Perovskite nanocrystalline is used as a matrix material and is doped with LaFeO through cobalt ions3The Fe site of the perovskite nanocrystal is obtained. The perovskite photodetector prepared by the preparation method has the advantages of simple structure, simple preparation process, low production cost and no need of expensive instruments and equipmentAnd the like. The LaFeO is greatly improved by the film sensitive material obtained by doping the cobalt ions in the lanthanum ferrite3The light absorption intensity in the infrared region increases the electrical properties of perovskite, reduces surface defects and improves carrier mobility.

Description

Infrared photoelectric detector based on cobalt-doped lanthanum iron cobaltate nano film and manufacturing method thereof
Technical Field
The invention relates to the technical field of inorganic semiconductor photoelectric detectors, in particular to an infrared photoelectric detector based on a cobalt-doped lanthanum iron cobaltate nano-film and a manufacturing method thereof.
Background
Sunlight can be divided into three wave bands, namely an ultraviolet region, a visible region and an infrared region; the wave band of 0.75-1000 mu m is an infrared wave band. Wherein 780-2526nm is a near infrared band. In the civil field, the system is used for communication, medical imaging, environmental and meteorological monitoring and the like; in military affairs, the infrared photoelectric detector has irreplaceable functions in military reconnaissance, night and mid-night vision, infrared guidance and the like.
The infrared light detector is an important photoelectric device for realizing sensing detection through photoelectric signal conversion, and the photoelectric detection is mainly completed through the following steps: the detector generates photon-generated carriers under the condition of external infrared radiation, then the photon-generated carriers are transported and multiplied in the semiconductor in a diffusion and drift mode, and finally photocurrent formed by the photon-generated carriers is collected by the electrodes at two ends, so that the detection of the external light radiation is realized.
Infrared detectors convert infrared radiant energy, invisible to the unaided human eye, into measurable energy, the most important consideration being the choice of materials and device structures. Compared with a large bulk material, the nano film material has excellent photoelectric characteristics, and is favorable for being applied to the field of photoelectric detection. The nano material has small size and high internal charge transport speed, so that the response speed can be greatly improved. Meanwhile, the large specific surface area also enables the nano material to have a large light absorption area, namely, the light absorption capacity is also strong.
Currently commercially available near infrared photodetectors are typically silicon-based photodetectors that can only respond to infrared light having wavelengths shorter than 1100 nm. Moreover, these photodetectors usually have complex device structures and complicated fabrication steps, which makes them expensive and limits their applications; the traditional metal oxide electron transport material has poor conductivity, a plurality of defects and relatively weak light absorption capacity.
Disclosure of Invention
The invention aims to provide an infrared photoelectric detector based on a cobalt-doped lanthanum iron cobaltate nano film and a manufacturing method thereof, and solves the problems in the prior art. The invention improves the light absorption capability in the near infrared band. LaFeO3As a perovskite (ABO)3) A type of composite oxide having a melting point of 1900 ℃ and havingGood high-temperature thermal stability, and has excellent physical and chemical properties, and thus has wide applications in various fields such as solid electrolytes, solid oxide fuel cells, and electrochemical devices. According to the light absorption theory of the semiconductor, proper impurities are introduced into the substrate to form impurity energy levels corresponding to near infrared bands, so that the absorptivity of the semiconductor in the corresponding bands can be enhanced. Co doping in LFO results in a reduction of the bandgap, which can be useful in photovoltaic applications.
The above object of the present invention is achieved by the following technical solutions:
the infrared photoelectric detector based on the cobalt-doped iron lanthanum cobaltate nano film consists of an interdigital electrode 5 and a perovskite nano film coated on the interdigital electrode, wherein the perovskite nano film is made of LaFeO3Perovskite nanocrystalline is used as a matrix material, and LaFeO is doped through Co ions3The Fe site of the perovskite nanocrystal is obtained.
The interdigital electrode 5 consists of a PET flexible substrate, a metal layer and an electrode layer.
The metal layer is a Cu electrode, and the thickness of the metal layer is 6 mu m.
The electrode layer is an Au electrode, and the thickness of the electrode layer is 1 mu m.
The doping concentration of the cobalt ions is 1-3 mol%.
The cobalt ion-doped lanthanum iron cobaltate nano material has small single crystal grain size, and the crystals are closely arranged, have more smaller gaps and are in a scaly shape.
The invention also aims to provide a preparation method of the infrared photoelectric detector based on the cobalt ion doped lanthanum iron cobaltate nanocrystal, which comprises the following steps of firstly synthesizing the cobalt ion doped lanthanum calcium cobaltate nanomaterial by a sol-gel method:
(1) preparation of lanthanum ferrite perovskite nano material
Preparing a lanthanum ferrite nano material by a hydrothermal method: at room temperature, firstly, 0.5mol of lanthanum nitrate hexahydrate and 0.5mol of ferric nitrate nonahydrate are weighed and dissolved in 10-20 ml of deionized water to form a mixed solution, and the mixed solution is magnetically stirred at room temperature for 5-7 min to be fully dissolved; weighing citric acid in another beaker, fully dissolving the citric acid in 10-20 ml of deionized water, dripping the obtained citric acid solution into a mixed solution of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate, and magnetically stirring for 30min to obtain a yellow transparent solution; placing the yellow solution in an ultrasonic cleaner for continuous cleaning for 30 minutes, placing the cleaned solution into a 50ml reaction kettle, and then placing the reaction kettle into an electric heating constant-temperature drying box for drying; cooling the reaction kettle to room temperature, centrifuging the reaction product by using a centrifuge, and washing for 6-8 times by using absolute ethyl alcohol and deionized water; filtering the supernatant to obtain a precipitate; placing the precipitate in a glass ware, placing the glass ware in a drying box, setting the temperature at 80 ℃, and drying for 12 hours to obtain the lanthanum ferrite nano material;
(2) preparation of cobalt ion doped lanthanum iron cobaltate nano material
Preparing the iron lanthanum cobaltite perovskite nano material by adopting a sol-gel method: adding La (NO)3)3·6H2O、Co(NO3)2•6H2O and Fe (NO)3)3·9H2Dissolving O in 30-40 ml of deionized water; performing ultrasonic treatment at room temperature for 5-7 min, adding citric acid according to the mass ratio of the total mass of the medicine to the citric acid being 1:1.2, and stirring at room temperature for 15-20 min to obtain a uniform mixed solution. Then adding 5-10 g of polyethylene glycol 2000 into the mixed solution, stirring on a magnetic stirrer heated to 70-80 ℃ to form viscous red brown gel, and aging at room temperature for 24 hours; transferring the gel to an electrothermal constant-temperature drying oven for drying; and putting the obtained product into a muffle furnace, pre-sintering for 1-3 hours at 400 ℃, and sintering for 1-3 hours at 600 ℃ to obtain the cobalt-doped lanthanum iron cobaltate nano material.
(3) Preparing an infrared photoelectric detector:
putting 2 g-5 g of cobalt-doped lanthanum iron cobaltate nano material into an agate mortar, grinding for 4-5 hours, adding deionized water and absolute ethyl alcohol, fully grinding, and preparing into a pasty material; and sequentially putting the interdigital electrode into acetone, ethanol and deionized water, performing ultrasonic multi-washing cleaning for 5min at room temperature, and drying in an oven. And spin-coating the pasty material on the interdigital electrode to form a uniform film, and then placing the uniform film in a constant-temperature drying box at 40-45 ℃ for drying to obtain the cobalt ion doped iron-cobalt lanthanum ultraviolet photoelectric detector.
Further, the reaction kettle in the step (1) is placed into an electric heating constant temperature drying oven for drying, the temperature in the drying oven is uniformly raised from 20 ℃ to 180 ℃ at a speed of 4 ℃/min, and the reaction kettle is heated at a constant temperature of 180 ℃ for 24 hours.
Further, the gel is transferred to an electric heating constant temperature drying oven for drying in the step (2), the temperature in the drying oven is uniformly increased from 20 ℃ to 90 ℃ at a speed of 4 ℃/min, and the gel is heated at a constant temperature of 90 ℃ for 12-24 hours.
Further, in the step (3), the number of pairs of interdigital electrodes is 30, the line width is 50 μm, and the line distance is 50 μm.
The invention has the beneficial effects that: the perovskite photodetector prepared by the method has the advantages of simple structure, simple preparation process, low production cost, no need of expensive instruments and equipment and the like. The LaFeO is greatly improved by the film sensitive material obtained by doping the cobalt ions in the lanthanum ferrite3The light absorption intensity in the infrared region increases the electrical properties of perovskite, reduces surface defects and improves carrier mobility. The cobalt ion can greatly improve LaFeO3The intensity of light absorption in the near infrared region, and the electrical properties of the perovskite can be enhanced. When Fe3+Is made of low-price Co2+After substitution, Fe3+Must partially convert into Fe4 +To compensate for the lack of positive charge, which lowers the activation energy of electron transfer and improves electron conductivity, and for charge compensation, oxygen vacancies, which are transport carriers (carriers) of oxygen ions of the perovskite material, are formed, resulting in an increase in conductivity. The existence of the local built-in electric field influences the transmission of internal carriers, promotes the separation of electrons and holes, and improves the sensitivity of the photoelectric detector. The Co ions are doped, the moving distance of a conduction band to the low-energy level direction is larger than the downward moving distance of a valence band, the forbidden bandwidth is reduced from 3.1847eV to 1.722eV, the system bandwidth is reduced, the free carrier absorption of the material is improved, and the infrared wave absorption performance of the material is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without limiting the invention.
Fig. 1 is a schematic structural diagram of an infrared photodetector according to the present invention;
FIG. 2 shows LaFeO in accordance with an embodiment of the present invention3Transmission electron microscopy images of perovskite nanocrystals;
FIG. 3 shows a Co-doped LaCo layer according to an embodiment of the present invention0.1Fe0.9O3Transmission electron microscopy images of perovskite nanocrystals;
FIG. 4 shows LaFeO obtained in the example of the present invention3And LaCo0.1Fe0.9O3XRD pattern of the nanomaterial;
FIG. 5 shows LaFeO obtained in the example of the present invention3And LaCo0.1Fe0.9O3An enlarged diagram of an XRD main diffraction peak of the nano material;
fig. 6 is an infrared light absorption curve of the infrared photodetector manufactured in the embodiment of the present invention.
In the figure: 1. a PET flexible substrate; 2. a Cu electrode; 3. an Au electrode; 4. the cobalt-doped lanthanum iron cobaltate nano film comprises a cobalt-doped lanthanum iron cobaltate nano film, 5 and interdigital electrodes.
Detailed Description
The details of the present invention and its embodiments are further described below with reference to the accompanying drawings.
Referring to fig. 1 to 6, in the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano-film, Co ion-doped LaFeO is adopted3Perovskite nanocrystals are used as matrix materials. The lanthanum iron cobaltate nano film material obtained by doping cobalt ions in lanthanum ferrite has small single crystal grain size, compact crystal arrangement, more and smaller gaps, reduced surface defects, improved carrier mobility, increased electrical properties of perovskite and greatly improved LaFeO3Light absorption intensity in the infrared region. The infrared photoelectric detector prepared by the preparation method has the advantages of simple structure, simple preparation process, low production cost, no need of expensive instruments and equipment and the like.
The invention is based on cobalt dopingThe infrared photoelectric detector of the iron-cobalt lanthanum nano film consists of an interdigital electrode 5 and a perovskite nano film coated on the interdigital electrode 5, wherein the perovskite nano film is made of LaFeO3Perovskite nanocrystalline is used as a matrix material and is doped with LaFeO through cobalt ions3The Fe site of the perovskite nanocrystal is used for obtaining the cobalt-doped iron lanthanum cobaltate nano film 4.
The interdigital electrode 5 consists of a PET flexible substrate 1, a metal layer (a Cu electrode 2 with the thickness of 6 mu m) and an electrode layer (an Au electrode 3 with the thickness of 1 mu m).
The cobalt ion-doped lanthanum iron cobaltate nano material has small single crystal grain size, and the crystals are closely arranged, have more smaller gaps and are in a scaly shape. The whole gap of the film material is small and dense, which is beneficial to the absorption of infrared light.
The perovskite nanocrystal has adjustable band gap, high carrier mobility, easy processing and low cost, and is proved to be a material of a high-sensitivity ultraviolet-visible-near infrared photoelectric detector. At present, trivalent lanthanide ions with unique photoelectric properties have been successfully doped into perovskite nanocrystals or thin films, greatly improving the photoelectric properties of perovskites by eliminating deep defects and improving the film quality of the perovskite material.
The invention relates to a preparation method of an infrared photoelectric detector based on cobalt ion doped lanthanum iron cobaltate nanocrystals, which comprises the following steps:
(1) preparation of lanthanum ferrite perovskite nano film material
Preparing a lanthanum ferrite nano material by a hydrothermal method: at room temperature, firstly, 0.5mol of lanthanum nitrate hexahydrate and 0.5mol of ferric nitrate nonahydrate are weighed and dissolved in 10-20 ml of deionized water to form a mixed solution, and the mixed solution is magnetically stirred at room temperature for 5-7 min to be fully dissolved; weighing citric acid in another beaker, fully dissolving the citric acid in 10-20 ml of deionized water, dripping the obtained citric acid solution into a mixed solution of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate, and magnetically stirring for 30min to obtain a yellow transparent solution; placing the yellow solution in an ultrasonic cleaner for continuous cleaning for 30 minutes, placing the cleaned solution into a 50ml reaction kettle, and then placing the reaction kettle into an electric heating constant-temperature drying box for drying; cooling the reaction kettle to room temperature, centrifuging the reaction product by using a centrifuge, and washing for 6-8 times by using absolute ethyl alcohol and deionized water; filtering the supernatant to obtain a precipitate; placing the precipitate in a glass ware, placing the glass ware in a drying box, setting the temperature at 80 ℃, and drying for 12 hours to obtain the lanthanum ferrite nano material;
(2) preparation of cobalt ion doped lanthanum iron cobaltate nano film material
Preparing the iron lanthanum cobaltite perovskite nano material by adopting a sol-gel method: adding La (NO)3)3·6H2O、Co(NO3)2•6H2O and Fe (NO)3)3·9H2Dissolving O in 30-40 ml of deionized water; performing ultrasonic treatment at room temperature for 5-7 min, adding citric acid according to the mass ratio of the total mass of the medicine to the citric acid being 1:1.2, and stirring at room temperature for 15-20 min to obtain a uniform mixed solution. Then adding 5-10 g of polyethylene glycol 2000 into the mixed solution, stirring on a magnetic stirrer heated to 70-80 ℃ to form viscous red brown gel, and aging at room temperature for 24 hours; transferring the gel to an electrothermal constant-temperature drying oven for drying; and putting the obtained product into a muffle furnace, pre-sintering for 1-3 hours at 400 ℃, and sintering for 1-3 hours at 600 ℃ to obtain the cobalt-doped lanthanum iron cobaltate nano material.
(3) Preparing an infrared photoelectric detector:
putting 2 g-5 g of cobalt-doped lanthanum iron cobaltate nano material into an agate mortar, grinding for 4-5 hours, adding deionized water and absolute ethyl alcohol, fully grinding, and preparing into a pasty material; and sequentially putting the interdigital electrode into acetone, ethanol and deionized water, performing ultrasonic multi-washing cleaning for 5min at room temperature, and drying in an oven. And spin-coating the pasty material on the interdigital electrode to form a uniform film, and then placing the uniform film in a constant-temperature drying box at 40-45 ℃ for drying to obtain the cobalt ion doped iron-cobalt lanthanum ultraviolet photoelectric detector.
Further, the reaction kettle in the step (1) is placed into an electric heating constant temperature drying oven for drying, the temperature in the drying oven is uniformly raised from 20 ℃ to 180 ℃ at a speed of 4 ℃/min, and the reaction kettle is heated at a constant temperature of 180 ℃ for 24 hours.
Further, the gel is transferred to an electric heating constant temperature drying oven for drying in the step (2), the temperature in the drying oven is uniformly increased from 20 ℃ to 90 ℃ at a speed of 4 ℃/min, and the gel is heated at a constant temperature of 90 ℃ for 12-24 hours.
Further, in the step (3), the number of pairs of interdigital electrodes is 30, the line width is 50 μm, and the line distance is 50 μm.
Example (b):
the invention relates to a preparation method of an infrared photoelectric detector based on cobalt ion doped lanthanum iron cobaltate nanocrystals, which comprises the following steps of firstly synthesizing a cobalt ion doped lanthanum calcium cobaltate nano material by a sol-gel method:
step (1), preparation of lanthanum ferrite perovskite nano film material
Preparing a lanthanum ferrite nano material by a hydrothermal method: at room temperature, firstly, 0.5mol of lanthanum nitrate hexahydrate and 0.5mol of ferric nitrate nonahydrate are weighed and dissolved in 10-20 ml of deionized water to form a mixed solution, and the mixed solution is magnetically stirred at room temperature for 5-7 min to be fully dissolved; weighing citric acid in another beaker, fully dissolving the citric acid in 10-20 ml of deionized water, dripping the obtained citric acid solution into a mixed solution of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate, and magnetically stirring for 30min to obtain a yellow transparent solution; placing the yellow solution in an ultrasonic cleaner for continuous cleaning for 30 minutes, placing the cleaned solution into a 50ml reaction kettle, and then placing the reaction kettle into an electric heating constant-temperature drying box for drying; cooling the reaction kettle to room temperature, centrifuging a reaction product by using a centrifugal machine, and washing 6-8 times by using absolute ethyl alcohol and deionized water; filtering the supernatant to obtain a precipitate; placing the precipitate in a glassware, placing the glassware in a drying box, setting the temperature at 80 ℃, and drying for 12 hours to obtain a lanthanum ferrite nano material;
step (2), preparation of cobalt ion-doped lanthanum iron cobaltate nano film material
Preparing the iron lanthanum cobaltite perovskite nano material by adopting a sol-gel method: 0.65g of La (NO)3)3·6H2O, 0.05g of Co (NO)3)2•6H2O and 0.55g Fe (NO)3)3·9H2Dissolving O in 30ml of deionized water; ultra-high temperature at room temperatureAnd (3) performing sound for 10min, adding 1.49g of citric acid according to the mass ratio of the total mass of the medicines to the citric acid of 1:1.2, and stirring at room temperature for 20min to obtain a uniform mixed solution. Then adding 7g of polyethylene glycol 2000 into the mixed solution, heating to 80 ℃, stirring on a magnetic stirrer to form viscous reddish brown gel, and aging for 24 hours at room temperature; transferring the gel to an electrothermal constant-temperature drying oven for drying; and putting the obtained product into a muffle furnace, presintering for 2 hours at 400 ℃, and sintering for 2 hours at 600 ℃ to obtain the lanthanum ferrite nano material.
Then, the preparation of the photoelectric detector comprises the following steps:
step (3), 2g of cobalt-doped lanthanum iron cobaltate nano material is put into an agate mortar, and after grinding for 5 hours, deionized water and absolute ethyl alcohol are added, and the mixture is fully ground and prepared into paste; and sequentially putting the interdigital electrode into acetone, ethanol and deionized water, performing ultrasonic multi-washing cleaning for 5min at room temperature, and drying in an oven. And then, spin-coating the pasty lanthanum iron cobaltate nano material on the interdigital electrode to form an even film, and then placing the film in a constant-temperature drying box at 40 ℃ for drying to obtain the cobalt ion doped lanthanum iron cobaltate ultraviolet photoelectric detector.
Further, in the step (1), the reaction kettle is placed into an electric heating constant temperature drying oven for drying, the temperature in the drying oven is uniformly raised from 20 ℃ to 180 ℃ at a speed of 4 ℃/min, and the reaction kettle is heated at a constant temperature of 180 ℃ for 24 hours.
Further, in the step (2), the gel is transferred to an electric heating constant temperature drying oven for drying, the temperature in the drying oven is uniformly raised from 20 ℃ to 110 ℃ at a speed of 4 ℃/min, and the gel is heated at the constant temperature of 110 ℃ for 12 hours.
Further, in the step (3), the used interdigital electrode takes PET flexibility as a substrate, the metal layer is a Cu electrode, the electrode layer is an Au electrode, the number of pairs of interdigital electrodes is 30, the line width is 50 μm, and the line distance is 50 μm.
FIG. 2 shows LaFeO prepared in the examples3And (3) carrying out transmission electron microscope determination: the transmission electron microscope was tested using a Hitachi H-8100IV transmission electron microscope at an accelerating voltage of 200 kV. Transmission electron microscope images show that LaFeO3 grains haveObvious agglomeration is in a random spherical shape, and the agglomeration is arranged loosely and has no layered structure.
FIG. 3 shows LaCo prepared in the examples0.1Fe0.9O3The Co ion-doped single crystal is small in grain size, compact in crystal arrangement, large in number of small gaps and scaly in shape.
FIG. 4 shows LaFeO prepared in the examples3And LaCo0.1Fe0.9O3The X-ray diffraction pattern obtained by subjecting the nanocrystals to a test of X-ray diffraction pattern, which was recorded as a thin film on a Bruker AXS D8 diffractometer using alpha radiation (λ = 1.54178). LaFeO can be seen from the figure3And LaCo0.1Fe0.9O3The relative intensity of the diffraction peak is high, no other miscellaneous peak appears, and the crystal belongs to an orthorhombic perovskite type structure.
FIG. 5 shows LaFeO prepared in the examples3And LaCo0.1Fe0.9O3The amplified image of the nanocrystalline from the main diffraction peak can find that the main peak of the doped material is shifted. LaFeO3The middle Fe is mainly +3 valence, Fe3+Has a radius of 0.0645nm, Co3+Has a radius of 0.0545nm, and the unit cell volume becomes smaller after doping.
Fig. 6 is a graph of the spectral absorbance of an infrared photodetector made in an example of the invention. Indicating that LaFeO3The infrared absorption at the wave band of 200-2500 nm is near 550nm, and the average absorption rate is 66.56%. LaCo0.1Fe0.9O3The infrared absorption at the wave band of 200-2500 nm is near 700nm, and the average absorption rate is 83.14%. The data show that the cobalt ion doped lanthanum iron cobaltate detector improves the absorption rate of infrared waves.
The above description is only a preferred example of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like of the present invention shall be included in the protection scope of the present invention.

Claims (10)

1. An infrared photoelectric detector based on a cobalt-doped lanthanum iron cobaltate nano film is characterized in that: consists of an interdigital electrode (5) and a perovskite nano film coated on the interdigital electrode (5), wherein the perovskite nano film is LaFeO3Perovskite nanocrystalline is used as a matrix material and is doped with LaFeO through cobalt ions3The Fe site of the perovskite nanocrystal is obtained.
2. The infrared photodetector based on the cobalt-doped lanthanum iron cobaltate nanocrystals, as recited in claim 1, wherein: the interdigital electrode (5) consists of a PET flexible substrate, a metal layer and an electrode layer.
3. The infrared photodetector based on the cobalt-doped lanthanum iron cobaltate nano-film as claimed in claim 2, wherein: the metal layer is a Cu electrode (2) and is 6 mu m thick.
4. The infrared photodetector based on the cobalt-doped lanthanum iron cobaltate nano-film as claimed in claim 2, wherein: the electrode layer is an Au electrode (3) and is 1 mu m thick.
5. The infrared photodetector based on the cobalt-doped lanthanum iron cobaltate nanocrystals, as recited in claim 1, wherein: the doping concentration of the cobalt ions is 1-3 mol%.
6. The infrared photodetector based on the cobalt-doped lanthanum iron cobaltate nano-film as claimed in claim 1, wherein: the cobalt ion-doped lanthanum iron cobaltate nano material has small single crystal grain size, compact crystal arrangement, scaly shape and small gaps.
7. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to any one of claims 1 to 6, wherein the method comprises the following steps: firstly, synthesizing a cobalt ion doped iron-lanthanum cobaltate perovskite nano film by a sol-gel method, which comprises the following steps:
step (1), preparation of lanthanum ferrite perovskite nano material
Preparing a lanthanum ferrite nano material by a hydrothermal method: at room temperature, firstly, 0.5mol of lanthanum nitrate hexahydrate and 0.5mol of ferric nitrate nonahydrate are weighed and dissolved in 10-20 ml of deionized water to form a mixed solution, and the mixed solution is magnetically stirred at room temperature for 5-7 min to be fully dissolved; weighing citric acid in another beaker, fully dissolving the citric acid by using 10-20 ml of deionized water, dripping the citric acid solution into a mixed solution of lanthanum nitrate hexahydrate and ferric nitrate nonahydrate, and magnetically stirring for 30min to obtain a yellow transparent solution; placing the yellow solution in an ultrasonic cleaner for continuous cleaning for 30 minutes, placing the cleaned solution into a 50ml reaction kettle, and then placing the reaction kettle into an electric heating constant-temperature drying box for drying; cooling the reaction kettle to room temperature, centrifuging the reaction product by using a centrifuge, and washing for 6-8 times by using absolute ethyl alcohol and deionized water; filtering the supernatant to obtain a precipitate; placing the precipitate in a glass ware, placing the glass ware in a drying box, setting the temperature at 80 ℃, and drying for 12 hours to obtain the lanthanum ferrite nano material;
step (2), preparation of cobalt ion-doped lanthanum iron cobaltate nano material
Preparing the iron lanthanum cobaltite perovskite nano material by adopting a sol-gel method: adding La (NO)3)3·6H2O、Co(NO3)2•6H2O and Fe (NO)3)3·9H2Dissolving O in deionized water respectively; performing ultrasonic treatment at room temperature for 5-7 min, adding citric acid according to the mass ratio of the total mass of the medicine to the citric acid of 1:1.2, and stirring at room temperature for 15-20 min to obtain a uniform mixed solution; then adding 5-10 g of polyethylene glycol 2000 into the mixed solution, stirring on a magnetic stirrer heated to 70-80 ℃ to form viscous reddish brown gel, and aging at room temperature for 24 hours; transferring the gel to an electrothermal constant-temperature drying oven for drying; putting the obtained product into a muffle furnace, presintering for 1-3 hours at 400 ℃, and sintering for 1-3 hours at 600 ℃ to obtain a cobalt-doped lanthanum iron cobaltate nano material;
step (3) preparation of photoelectric detector
Putting 2 g-5 g of cobalt-doped lanthanum iron cobaltate nano material into an agate mortar, grinding for 4-5 hours, adding deionized water and absolute ethyl alcohol, fully grinding, and preparing into a pasty material; sequentially putting the interdigital electrode into acetone, ethanol and deionized water, performing ultrasonic multi-washing cleaning for 5min at room temperature, and drying in an oven; and spin-coating the pasty material on the interdigital electrode to form an even film, and then placing the film in a constant-temperature drying box at 40-45 ℃ for drying to obtain the cobalt ion doped lanthanum iron cobaltate infrared photoelectric detector.
8. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to claim 7, wherein the method comprises the following steps: and (2) drying the reaction kettle in the step (1) in an electric heating constant-temperature drying oven, uniformly heating the temperature in the drying oven from 20 ℃ to 180 ℃ at a speed of 4 ℃/min, and heating at the constant temperature of 180 ℃ for 24 hours.
9. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to claim 7, wherein the method comprises the following steps: and (3) transferring the gel to an electric heating constant-temperature drying oven for drying in the step (2), uniformly heating the temperature in the drying oven from 20 ℃ to 110 ℃ at a speed of 4 ℃/min, and heating at the constant temperature of 90 ℃ for 12 hours.
10. The method for preparing the infrared photoelectric detector based on the cobalt-doped lanthanum iron cobaltate nano film according to claim 6, wherein the method comprises the following steps: in the interdigital electrode in the step (3), the number of pairs of interdigital pairs is 30, the line width is 50 mu m, and the line distance is 50 mu m.
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