CN113192822A - 一种晶圆电镀方法及晶圆电镀夹具 - Google Patents
一种晶圆电镀方法及晶圆电镀夹具 Download PDFInfo
- Publication number
- CN113192822A CN113192822A CN202110455159.2A CN202110455159A CN113192822A CN 113192822 A CN113192822 A CN 113192822A CN 202110455159 A CN202110455159 A CN 202110455159A CN 113192822 A CN113192822 A CN 113192822A
- Authority
- CN
- China
- Prior art keywords
- wafer
- electroplating
- metal
- conductive
- bpsg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009713 electroplating Methods 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 79
- 235000014676 Phragmites communis Nutrition 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000005380 borophosphosilicate glass Substances 0.000 claims abstract 10
- 244000273256 Phragmites communis Species 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000006722 reduction reaction Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 244000089486 Phragmites australis subsp australis Species 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/46—Electroplating: Baths therefor from solutions of silver
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
本发明公开了一种晶圆电镀方法及晶圆电镀夹具，包括依次完成的钝化层处理、种子层生长、BPSG生长、电极窗口制作、晶圆Ag电镀、去除BPSG、刻蚀晶圆金属Ag、背面电极生长八个步骤；电镀电流进入导电金属环后经多个间隔分布的导电簧片均匀流至晶圆表面上，使得金属原子在晶圆表面上快速稳定进行还原反应生长形成平整度好、均匀高的金属镀层，解决了现有金属电镀到晶圆表面上形成电镀层的平整度和均匀性差的问题，避免了晶圆电镀后金属层翘起的情况发生。
Description
技术领域
本发明涉及一种晶圆电镀方法及晶圆电镀夹具，属于半导体制造技术领域。
背景技术
晶圆表面电镀是制作半导体器件的一种电镀工艺，现有技术将金属电镀到晶圆上的平整度和均匀性差，例如在中国专利号为CN1114718C的在硅衬底上直接电铸三维金属结构的方法及其专用夹具，采用的技术为：“将夹具连同样品放入电镀槽中，将输入电极与电镀槽的电源阳极相接，接通电源后，电荷便通过弹性金属、金属板和硅片到达被镀面上，在硅片的表面进行还原反应，达到金属淀积与生长的目的”，由于电荷最后是经金属板达到硅片的表面进行还原反应，电镀的电流从金属板流动很难均匀流至硅片的表面，当需要电镀的金属膜层较厚时，电镀后的金属层应力无法释放而导致晶圆翘起，存在金属电镀到晶圆表面上形成电镀层的平整度和均匀性差的问题。
发明内容
为解决上述技术问题，本发明提供了一种晶圆电镀方法及晶圆电镀夹具。
本发明通过以下技术方案得以实现。
本发明提供的本发明的一种晶圆电镀方法，包括依次完成的钝化层处理、种子层生长、BPSG生长、电极窗口制作、晶圆Ag电镀、去除BPSG、刻蚀晶圆金属Ag、背面电极生长八个步骤。
所述步骤一，钝化层处理：使用SiO2或Si3N4材料对晶圆的半导体衬底进行钝化层生长，光刻、刻蚀出电极窗口；
所述步骤二，种子层生长：使用金属Ag采用溅射或蒸发的方式在晶圆2正面进行种子层生长，形成种子金属Ag，种子金属Ag的厚度为0.01μm～5μm；
所述步骤三，BPSG生长：在晶圆正面和背面采用PECVD进行BPSG生长，BPSG的厚度为0.1μm～5μm；
所述步骤四，电极窗口制作：采用1:20的氢氟酸溶液刻蚀晶圆正面上的BPSG 20～200s，完成晶圆正面金属Ag种子层与导电簧片接触窗口制作；
所述步骤五，晶圆Ag电镀：电镀夹具通过夹具固定孔与电镀设备进行固定，晶圆放在晶圆电镀夹具内的平面卡槽被多个环形分布的导电簧片压紧，使用K[Ag2]电镀液，通入5min～300min的1mA～10A电流进行电镀，电镀电流进入导电金属环后经多个间隔分布的导电簧片均匀流至晶圆表面上，形成完成和均匀的厚银金属层；
所述步骤六，去除BPSG：采用1:20的氢氟酸溶液刻蚀20～200s，去除晶圆表面和背面的BPSG；
所述步骤七，刻蚀晶圆金属Ag：刻蚀晶圆表面钝化层正上方的种子层金属Ag；
所述步骤八，背面电极生长：采用Ti或Ni或Ag在晶圆的半导体衬底的背面生长形成背面电极；完成后，形成一个以金属Ti或Ni或Ag为背面电极，背面电极上以硅或碳化硅等为半导体衬底，在半导体衬底中部、两侧对应形成金属银的种子层、SiO2或Si3N4的钝化层，在金属Ag的种子层上形成银金属的厚银金属层的一种二极管芯片结构。
一种晶圆电镀夹具，包括：电镀夹具底板，电镀夹具底板中部设有用于与晶圆进行限位卡合的平面卡槽；电镀夹具底板上固定有能导电的导电金属环，平面卡槽位于导电金属环圈内；导电金属环上固定有多个间隔分布的导电簧片，导电簧片一端与导电金属环固定，导电簧片另一端位于平面卡槽的上方能与晶圆压住接触，电镀电流进入导电金属环后经多个间隔分布的导电簧片均匀流至晶圆表面上。
所述多个导电簧片沿着导电金属环外周环形分布，所述导电簧片与导电金属环经螺钉或螺栓固定。
本发明的有益效果在于：电镀电流进入导电金属环后经多个间隔分布的导电簧片均匀流至晶圆表面上，使得金属原子在晶圆表面上快速稳定进行还原反应生长形成平整度好、均匀高的金属镀层，解决了现有金属电镀到晶圆表面上形成电镀层的平整度和均匀性差的问题，避免了晶圆电镀后金属层翘起的情况发生。
附图说明
图1是本发明晶圆电镀夹具的俯视剖面结构示意图；
图2是本发明晶圆电镀夹具的主视示意图；
图3是本发明晶圆电镀方法光刻、刻蚀钝化层之后的器件结构图；
图4是本发明晶圆电镀方法种子金属Ag生长图；
图5是本发明晶圆电镀方法正面、背面BPSG生长图；
图6是本发明晶圆电镀方法正面BPSG光刻、刻蚀图；
图7是本发明晶圆电镀方法电镀金属Ag图；
图8是本发明晶圆电镀方法去除BPSG膜层图；
图9是本发明晶圆电镀方法刻蚀去除SiO2/Si3N4上方种子金属图；
图10是本发明晶圆电镀方法背面生长Ti/Ni/Ag金属电极图；
图11是本发明晶圆电镀方法得到的二极管芯片结构图。
具体实施方式
下面进一步描述本发明的技术方案，但要求保护的范围并不局限于所述。
如图1至图2所示，本发明的一种晶圆电镀夹具1，包括：电镀夹具底板11，电镀夹具底板11中部设有用于与晶圆2进行限位卡合的平面卡槽12；电镀夹具底板11上固定有由金属制成能导电的导电金属环13，平面卡槽12位于导电金属环13圈内；导电金属环13上固定有多个间隔分布的导电簧片14，导电簧片14一端与导电金属环13固定，导电簧片14另一端位于平面卡槽12的上方能与晶圆2压住接触，电镀电流进入导电金属环13后经多个间隔分布的导电簧片14均匀流至晶圆2表面上；
使得金属原子在晶圆2表面上快速稳定进行还原反应生长形成平整度好、均匀高的金属镀层，解决了现有金属电镀到晶圆表面上形成电镀层的平整度和均匀性差的问题，避免了晶圆电镀后金属层翘起的情况发生。
所述多个导电簧片14沿着导电金属环13外周环形分布，所述导电簧片14与导电金属环13经螺钉或螺栓固定。
所述电镀夹具底板11上设有连通平面卡槽12的取片槽15，通过取片槽15便于将电镀后的晶圆2取出而不损伤。
所述取片槽15的宽1.5cm，深2mm；所述平面卡槽12槽深50um～1000um，直径为105mm；所述导电簧片14长10mm～50mm,宽5mm～10mm；所述导电金属环13直径110mm～250mm，宽度5mm～50mm。
所述电镀夹具底板11上设有便于与电镀设备进行固定的夹具固定孔16。
所述导电簧片14为中部凸起的弧形，避免导电簧片14与电镀夹具底板11接触被电镀的金属离子焊死，方便将导电金属环13拆卸取出。
如图3至图11所示，本发明的一种晶圆电镀方法，包括步骤如下：
步骤一，钝化层23处理：使用SiO2或Si3N4材料对二极管的晶圆2的半导体衬底24进行钝化层23生长，光刻、刻蚀出电极窗口，如图3；
步骤二，种子层22生长：使用金属Ag采用溅射或蒸发的方式在晶圆22正面进行种子层22生长，形成种子金属Ag，种子金属Ag的厚度为0.01μm～5μm，如图4；
步骤三，BPSG生长：在晶圆2正面和背面采用PECVD(等离子体增强化学的气相沉积法)进行BPSG(硼硅玻璃)生长，BPSG的厚度为0.1μm～5μm，如图5；
步骤四，电极窗口制作：采用1:20的氢氟酸溶液刻蚀晶圆2正面上的BPSG(硼磷硅玻璃)20～200s，完成晶圆2正面金属Ag种子层与导电簧片14接触窗口制作，如图6；
步骤五，晶圆Ag电镀：电镀夹具1通过夹具固定孔16与电镀设备进行固定，晶圆2放在晶圆电镀夹具1内的平面卡槽12被多个环形分布的导电簧片14压紧，使用K[Ag(CN)2]电镀液，通入5min～300min的1mA～10A电流进行电镀，电镀电流进入导电金属环13后经多个间隔分布的导电簧片14均匀流至晶圆2表面上，形成完整和均匀的厚银金属层21，如图7；
步骤六，去除BPSG：采用1:20的氢氟酸溶液刻蚀20～200s，去除晶圆2表面和背面的BPSG，如图8；
步骤七，刻蚀晶圆金属Ag：刻蚀晶圆2表面钝化层23正上方的种子层22金属Ag，如图9；
步骤八，背面电极生长：采用Ti或Ni或Ag在晶圆2的半导体衬底24的背面生长形成背面电极25，如图10；完成后，形成一个以金属Ti或Ni或Ag为背面电极25，背面电极25上以硅或碳化硅等为半导体衬底24，在半导体衬底24中部、两侧对应形成金属银的种子层22、SiO2或Si3N4的钝化层23，在金属Ag的种子层22上形成银金属的厚银金属层21的一种二极管芯片结构，如图11。
本工艺方法不仅限于电镀银，其它器件或者芯片需要厚金属的，使用以上结构或方法电镀而成的，皆属于本专利的保护范围。
Claims (10)
1.一种晶圆电镀方法，其特征在于，包括依次完成的钝化层(23)处理、种子层(22)生长、BPSG生长、电极窗口制作、使用晶圆电镀夹具(1)完整均匀的晶圆Ag电镀、去除BPSG、刻蚀晶圆金属Ag、背面电极生长八个步骤。
2.如权利要求1所述的晶圆电镀方法，其特征在于：所述步骤一，钝化层(23)处理：使用SiO2或Si3N4材料对晶圆(2)的半导体衬底(24)进行钝化层(23)生长，光刻、刻蚀出电极窗口。
3.如权利要求1所述的晶圆电镀方法，其特征在于：所述步骤二，种子层(22)生长：使用金属Ag采用溅射或蒸发的方式在晶圆(2)2正面进行种子层(22)生长，形成种子金属Ag，种子金属Ag的厚度为0.01μm～5μm。
4.如权利要求1所述的晶圆电镀方法，其特征在于：所述步骤三，BPSG生长：在晶圆(2)正面和背面采用PECVD进行BPSG生长，BPSG的厚度为0.1μm～5μm。
5.如权利要求4所述的晶圆电镀方法，其特征在于：所述步骤四，电极窗口制作：采用1:20的氢氟酸溶液刻蚀晶圆(2)正面上的BPSG20～200s，完成晶圆(2)正面金属Ag种子层与导电簧片(14)接触窗口制作。
6.如权利要求1所述的晶圆电镀方法，其特征在于：所述步骤五，晶圆Ag电镀：电镀夹具(1)通过夹具固定孔(16)与电镀设备进行固定，晶圆(2)放在晶圆电镀夹具(1)内的平面卡槽(12)被多个环形分布的导电簧片(14)压紧，使用K[Ag(CN)2]电镀液，通入5min～300min的1mA～10A电流进行电镀，电镀电流进入导电金属环(13)后经多个间隔分布的导电簧片(14)均匀流至晶圆(2)表面上，形成完成和均匀的厚银金属层(21)。
7.如权利要求1所述的晶圆电镀方法，其特征在于：所述步骤六，去除BPSG：采用1:20的氢氟酸溶液刻蚀20～200s，去除晶圆(2)表面和背面的BPSG。
8.如权利要求1所述的晶圆电镀方法，其特征在于：所述步骤七，刻蚀晶圆金属Ag：刻蚀晶圆(2)表面钝化层(23)正上方的种子层(22)金属Ag。
9.如权利要求1所述的晶圆电镀方法，其特征在于：所述步骤八，背面电极生长：采用Ti或Ni或Ag在晶圆(2)的半导体衬底(24)的背面生长形成背面电极(25)；完成后，形成一个以金属Ti或Ni或Ag为背面电极(25)，背面电极(25)上以硅或碳化硅等为半导体衬底(24)，在半导体衬底(24)中部、两侧对应形成金属银的种子层(22)、SiO2或Si3N4的钝化层(23)，在金属Ag的种子层(22)上形成银金属的厚银金属层(21)的一种二极管芯片结构。
10.一种如权利要求1至9任意一项所述的晶圆电镀夹具(1)，包括：电镀夹具底板(11)，电镀夹具底板(11)中部设有用于与晶圆(2)进行限位卡合的平面卡槽(12)；电镀夹具底板(11)上固定有能导电的导电金属环(13)，平面卡槽(12)位于导电金属环(13)圈内；导电金属环(13)上固定有多个间隔分布的导电簧片(14)，导电簧片(14)一端与导电金属环(13)固定，导电簧片(14)另一端位于平面卡槽(12)的上方能与晶圆(2)压住接触，电镀电流进入导电金属环(13)后经多个间隔分布的导电簧片(14)均匀流至晶圆(2)表面上；所述多个导电簧片(14)沿着导电金属环(13)外周环形分布。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110455159.2A CN113192822A (zh) | 2021-04-26 | 2021-04-26 | 一种晶圆电镀方法及晶圆电镀夹具 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110455159.2A CN113192822A (zh) | 2021-04-26 | 2021-04-26 | 一种晶圆电镀方法及晶圆电镀夹具 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113192822A true CN113192822A (zh) | 2021-07-30 |
Family
ID=76979005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110455159.2A Pending CN113192822A (zh) | 2021-04-26 | 2021-04-26 | 一种晶圆电镀方法及晶圆电镀夹具 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113192822A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115323470A (zh) * | 2022-10-11 | 2022-11-11 | 之江实验室 | 一种实现多片晶圆电镀的装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11200096A (ja) * | 1997-11-06 | 1999-07-27 | Ebara Corp | ウエハのメッキ用治具 |
| KR20010039520A (ko) * | 1999-10-14 | 2001-05-15 | 윤종용 | 전기 도금 방법을 이용한 반도체 메모리 소자의 캐패시터제조방법 |
| JP2008205249A (ja) * | 2007-02-21 | 2008-09-04 | Renesas Technology Corp | 半導体装置の製造方法 |
| CN101958288A (zh) * | 2005-07-29 | 2011-01-26 | 米辑电子股份有限公司 | 半导体组件 |
| CN104099653A (zh) * | 2013-11-12 | 2014-10-15 | 南茂科技股份有限公司 | 半导体结构及其制造方法 |
| CN214736183U (zh) * | 2021-04-26 | 2021-11-16 | 中国振华集团永光电子有限公司（国营第八七三厂） | 一种晶圆电镀夹具 |
-
2021
- 2021-04-26 CN CN202110455159.2A patent/CN113192822A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11200096A (ja) * | 1997-11-06 | 1999-07-27 | Ebara Corp | ウエハのメッキ用治具 |
| KR20010039520A (ko) * | 1999-10-14 | 2001-05-15 | 윤종용 | 전기 도금 방법을 이용한 반도체 메모리 소자의 캐패시터제조방법 |
| CN101958288A (zh) * | 2005-07-29 | 2011-01-26 | 米辑电子股份有限公司 | 半导体组件 |
| JP2008205249A (ja) * | 2007-02-21 | 2008-09-04 | Renesas Technology Corp | 半導体装置の製造方法 |
| CN104099653A (zh) * | 2013-11-12 | 2014-10-15 | 南茂科技股份有限公司 | 半导体结构及其制造方法 |
| US8877630B1 (en) * | 2013-11-12 | 2014-11-04 | Chipmos Technologies Inc. | Semiconductor structure having a silver alloy bump body and manufacturing method thereof |
| CN214736183U (zh) * | 2021-04-26 | 2021-11-16 | 中国振华集团永光电子有限公司（国营第八七三厂） | 一种晶圆电镀夹具 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115323470A (zh) * | 2022-10-11 | 2022-11-11 | 之江实验室 | 一种实现多片晶圆电镀的装置 |
| CN115323470B (zh) * | 2022-10-11 | 2023-03-10 | 之江实验室 | 一种实现多片晶圆电镀的装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6664169B1 (en) | Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus | |
| US4557037A (en) | Method of fabricating solar cells | |
| CN101743639B (zh) | 用于半导体部件的接触结构及其制造方法 | |
| CN1551931A (zh) | 用于控制电镀层厚度均匀性的方法和装置 | |
| CN102834901A (zh) | 用于半导体基板的剥落 | |
| JPS6066426A (ja) | 半導体層上に導電金属材料を付着させる方法および装置 | |
| US9601640B2 (en) | Electrical contacts to nanostructured areas | |
| CN214736183U (zh) | 一种晶圆电镀夹具 | |
| TWI486492B (zh) | 用於太陽能電池之金屬電極之光鍍技術 | |
| CN113192822A (zh) | 一种晶圆电镀方法及晶圆电镀夹具 | |
| US2793178A (en) | Method of providing insulator with multiplicity of conducting elements | |
| CN111446193B (zh) | 一种中央部分去除的玻璃载板 | |
| CN111446165A (zh) | 一种晶圆热处理工艺以及晶圆双面电镀工艺 | |
| CN110447109A (zh) | 在相反极性的硅区域上同时形成金属电极的方法 | |
| CN1638084A (zh) | 静电卡盘、基片支持、夹具和电极结构及其制造方法 | |
| US2843809A (en) | Transistors | |
| JP4234295B2 (ja) | 球状半導体素子の電極形成方法 | |
| JPS61264766A (ja) | 太陽電池製作方法 | |
| CN102443839A (zh) | 一种电镀金刚石磨具的方法 | |
| CN111599669B (zh) | 一种适用于发热涂层材料欧姆电极的制作方法 | |
| CN209561354U (zh) | 一种石墨舟饱和绝缘的装置 | |
| CN210085576U (zh) | 一种水平载片舟及其托架结构 | |
| EP0165990A1 (en) | Method of fabricating solar cells | |
| SE8503833D0 (sv) | Forfarande for tillverkning av solceller | |
| CN116092929A (zh) | 一种双面晶圆化镀工艺 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |