CN113192817B - 等离子体处理装置及等离子体处理方法 - Google Patents

等离子体处理装置及等离子体处理方法 Download PDF

Info

Publication number
CN113192817B
CN113192817B CN202110067300.1A CN202110067300A CN113192817B CN 113192817 B CN113192817 B CN 113192817B CN 202110067300 A CN202110067300 A CN 202110067300A CN 113192817 B CN113192817 B CN 113192817B
Authority
CN
China
Prior art keywords
period
power supply
frequency
sub
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110067300.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN113192817A (zh
Inventor
舆水地盐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN202510680008.5A priority Critical patent/CN120545158A/zh
Publication of CN113192817A publication Critical patent/CN113192817A/zh
Application granted granted Critical
Publication of CN113192817B publication Critical patent/CN113192817B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202110067300.1A 2020-01-29 2021-01-19 等离子体处理装置及等离子体处理方法 Active CN113192817B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202510680008.5A CN120545158A (zh) 2020-01-29 2021-01-19 等离子体处理装置及等离子体处理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-012239 2020-01-29
JP2020012239A JP7336395B2 (ja) 2020-01-29 2020-01-29 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
CN113192817A CN113192817A (zh) 2021-07-30
CN113192817B true CN113192817B (zh) 2025-06-13

Family

ID=76970232

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202110067300.1A Active CN113192817B (zh) 2020-01-29 2021-01-19 等离子体处理装置及等离子体处理方法
CN202510680008.5A Pending CN120545158A (zh) 2020-01-29 2021-01-19 等离子体处理装置及等离子体处理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202510680008.5A Pending CN120545158A (zh) 2020-01-29 2021-01-19 等离子体处理装置及等离子体处理方法

Country Status (5)

Country Link
US (1) US11417502B2 (https=)
JP (1) JP7336395B2 (https=)
KR (2) KR102857736B1 (https=)
CN (2) CN113192817B (https=)
TW (1) TWI890729B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7039501B2 (ja) * 2019-01-25 2022-03-22 三菱ケミカルインフラテック株式会社 ブロックマット、ブロックマットの製造方法、および、護岸構造
JP7761537B2 (ja) * 2022-07-20 2025-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20260030958A (ko) * 2022-08-25 2026-03-06 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. 다수의 무선 주파수(rf) 전극을 포함하는 기판 서포트
KR20250072991A (ko) * 2022-09-21 2025-05-26 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치 및 플라스마 처리 방법
WO2026034234A1 (ja) * 2024-08-08 2026-02-12 東京エレクトロン株式会社 プラズマ処理装置及び電源システム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016066593A (ja) * 2014-09-17 2016-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP2016157735A (ja) * 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672455B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
KR20100001552A (ko) * 2008-06-27 2010-01-06 삼성전자주식회사 플라즈마를 이용한 식각 장치 및 플라즈마 식각 방법
KR101027471B1 (ko) * 2008-10-02 2011-04-06 엘아이지에이디피 주식회사 플라즈마 처리방법 및 처리장치
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5405504B2 (ja) * 2011-01-31 2014-02-05 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
WO2014035897A1 (en) * 2012-08-28 2014-03-06 Advanced Energy Industries, Inc. A method of controlling the switched mode ion energy distribution system
US9293301B2 (en) * 2013-12-23 2016-03-22 Varian Semiconductor Equipment Associates, Inc. In situ control of ion angular distribution in a processing apparatus
US10622217B2 (en) 2016-02-04 2020-04-14 Samsung Electronics Co., Ltd. Method of plasma etching and method of fabricating semiconductor device using the same
JP6826955B2 (ja) * 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7138497B2 (ja) * 2017-08-23 2022-09-16 東京エレクトロン株式会社 測定装置、測定方法及びプラズマ処理装置
JP2019129123A (ja) * 2018-01-26 2019-08-01 東京エレクトロン株式会社 直流電圧を印加する方法及びプラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016066593A (ja) * 2014-09-17 2016-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP2016157735A (ja) * 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Also Published As

Publication number Publication date
KR20250130751A (ko) 2025-09-02
KR20210097027A (ko) 2021-08-06
KR102857736B1 (ko) 2025-09-11
JP2021118314A (ja) 2021-08-10
US20210233745A1 (en) 2021-07-29
CN120545158A (zh) 2025-08-26
TW202133262A (zh) 2021-09-01
CN113192817A (zh) 2021-07-30
TWI890729B (zh) 2025-07-21
JP7336395B2 (ja) 2023-08-31
US11417502B2 (en) 2022-08-16

Similar Documents

Publication Publication Date Title
CN113228830B (zh) 等离子体处理装置及等离子体处理方法
CN113192817B (zh) 等离子体处理装置及等离子体处理方法
CN111430206B (zh) 等离子体处理装置及蚀刻方法
US20220223427A1 (en) Plasma processing apparatus and system
CN113078040B (zh) 等离子体处理装置及等离子体处理方法
CN112951698B (zh) 等离子体处理方法及等离子体处理装置
CN113410114B (zh) 等离子体处理装置
CN110085502B (zh) 控制等离子体处理装置的方法和等离子体处理装置
CN112242290B (zh) 等离子体处理方法及等离子体处理装置
CN113410115B (zh) 检查方法、检查装置及等离子体处理装置
CN112687511A (zh) 等离子体处理装置及等离子体处理方法
US12255049B2 (en) Plasma processing apparatus and plasma processing method
CN121331739A (zh) 等离子体处理装置及等离子体处理方法
JP6960421B2 (ja) プラズマ処理装置及びプラズマ処理方法
CN111146086B (zh) 蚀刻方法和等离子体处理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant