CN113189799A - High-temperature-resistant lithium niobate electro-optical modulator and preparation method thereof - Google Patents
High-temperature-resistant lithium niobate electro-optical modulator and preparation method thereof Download PDFInfo
- Publication number
- CN113189799A CN113189799A CN202110536666.9A CN202110536666A CN113189799A CN 113189799 A CN113189799 A CN 113189799A CN 202110536666 A CN202110536666 A CN 202110536666A CN 113189799 A CN113189799 A CN 113189799A
- Authority
- CN
- China
- Prior art keywords
- lithium niobate
- waveguide chip
- fixed
- niobate waveguide
- electro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
Abstract
The invention provides a high-temperature-resistant lithium niobate electro-optic modulator and a preparation method thereof, wherein the high-temperature-resistant lithium niobate electro-optic modulator comprises: a lithium niobate waveguide chip; an optical fiber coupled to the lithium niobate waveguide chip; the fixed microgroove is used for fixing the optical fiber so as to realize the coupling of the optical fiber and the lithium niobate waveguide chip; the lithium niobate waveguide chip and the fixed microgroove non-working area are both provided with a layer of metal film. The non-working areas of the lithium niobate waveguide chip and the fixed micro-groove are both provided with a layer of metal film, so that an externally introduced temperature field can be rapidly expanded on the surfaces of the lithium niobate waveguide chip and the fixed micro-groove, and the thermal stress caused by temperature difference is reduced.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a high-temperature-resistant lithium niobate electro-optical modulator and a preparation method thereof.
Background
With increasing mineral demand of petroleum, coal and the like in international markets, the resource exploration and development strength of various countries and regions is also increased year by year, and in the face of rapid depletion of shallow resources, deep resource exploration and development become more and more important, so that drilling of deep wells and ultra-deep wells is increasing. How the data generated during the probing process is transmitted to the surface has been a difficult problem. The traditional mode of using the cable not only has low transmission rate, but also is easily disturbed by complicated geomagnetic environment. Therefore, the optical fiber communication is an ideal choice, namely an electro-optical modulator is used for encoding data detected by various sensors at the well bottom, converting the data into optical signals and transmitting the optical signals to the ground through an optical cable.
Lithium niobate crystal is widely applied in optical storage, optical waveguide and optical communication technology due to its excellent piezoelectric, electrooptical and nonlinear optical properties. With the continuous development of scientific technology, deep wells and ultra-deep wells are drilled more and more at home and abroad; as the well depth increases, the well temperature also increases, requiring the lithium niobate modulator to be able to stably operate at temperatures above 250 ℃.
In practical application, however, the existing lithium niobate electro-optic modulator can only work between-45 ℃ and +85 ℃ due to the limitation of the manufacturing process. When the device is operated in an environment with the temperature of more than 85 ℃, the performance of the device is rapidly deteriorated. The reason is mainly influenced by the following two aspects: (1) high temperature causes the colloid to soften; (2) producing pyroelectric effect at high temperature.
Disclosure of Invention
In view of the above, the present invention provides a high temperature resistant lithium niobate electro-optical modulator and a method for manufacturing the same, so as to solve the problems in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that: a high temperature resistant lithium niobate electro-optic modulator comprising:
a lithium niobate waveguide chip;
an optical fiber coupled to the lithium niobate waveguide chip; and
the fixed micro-groove is used for fixing the optical fiber so as to realize the coupling of the optical fiber and the lithium niobate waveguide chip;
the lithium niobate waveguide chip and the fixed microgroove non-working area are both provided with a layer of metal film.
Preferably, the lithium niobate waveguide chip is integrated in a package, and the lithium niobate waveguide chip and the package are grounded simultaneously.
Preferably, the metal film is a gold film.
Preferably, the lithium niobate waveguide chip and the fixed micro-groove are welded and bonded.
Preferably, the lithium niobate waveguide chip and the fixed microgrooves are made of the same material, and the fixed microgrooves and the grooving surfaces and the grooving directions of the waveguides in the lithium niobate waveguide chip are the same.
Preferably, the optical fiber is solidified in the fixed microgroove through high-temperature-resistant inorganic curing glue, and the thermal expansion coefficient of the high-temperature-resistant inorganic curing glue is equivalent to that of the lithium niobate.
A preparation method of a high-temperature-resistant lithium niobate electro-optical modulator comprises the following steps
Preparing a lithium niobate waveguide chip and a fixed microgroove;
forming a layer of metal film on the lithium niobate waveguide chip and the non-working area of the fixed microgroove;
welding and bonding the lithium niobate waveguide chip and the fixed micro-groove;
and fixing the optical fiber in the fixed micro-groove.
Preferably, the lithium niobate waveguide chip and the fixed micro-groove fusion welding bonding process comprises the following steps:
aligning the lithium niobate waveguide chip with the fixed microgroove;
the lithium niobate waveguide chip and the fixed microgroove are quickly welded together by laser beams;
annealing;
and gluing and curing the periphery of the lithium niobate waveguide chip and the fixed micro-groove interface.
The invention has the advantages and positive effects that: in the invention, a layer of metal film is arranged in the non-working area of the lithium niobate waveguide chip and the fixed microgroove, and the lithium niobate waveguide chip and the tube shell are simultaneously grounded. Specifically, the externally introduced temperature field can be rapidly expanded on the surfaces of the lithium niobate waveguide chip and the fixed micro-groove, so that the thermal stress caused by temperature difference is reduced; more importantly, the metalized lithium niobate waveguide chip and the tube shell are grounded simultaneously, so that the surface charge accumulation caused by the pyroelectric effect can be eliminated quickly.
Drawings
FIG. 1 is a schematic diagram of a side view of a high temperature resistant lithium niobate electro-optic modulator of the present invention;
FIG. 2 is a schematic view of the structure of the fixed relationship between the fixed micro-grooves and the optical fiber according to the present invention.
In the figure: 1. optical fiber 2, high-temperature resistant inorganic curing adhesive 3, fixed microgroove 4, lithium niobate waveguide chip 5, tube shell 6 and high-temperature resistant optical fiber fixing adhesive
Detailed Description
For a better understanding of the present invention, reference is made to the following detailed description and accompanying drawings that illustrate the invention.
As shown in fig. 1, the present invention provides a high temperature resistant lithium niobate electro-optical modulator, comprising:
a lithium niobate waveguide chip 4;
an optical fiber 1 coupled to the lithium niobate waveguide chip 4; and
the fixed micro-groove 3 is used for fixing the optical fiber 1 so as to realize the coupling of the optical fiber 1 and the lithium niobate waveguide chip 4;
the non-working areas of the lithium niobate waveguide chip 4 and the fixed microgrooves 3 are both provided with a layer of metal film.
In the invention, a lithium niobate waveguide chip 4 is integrated in a tube shell 5, a waveguide structure is integrated on the lithium niobate waveguide chip 4, two ends of the waveguide are coupled with an optical fiber 1 through fixed microgrooves 3, specifically, the two ends of the waveguide of the lithium niobate waveguide chip 4 are fixedly connected with the fixed microgrooves 3, the optical fiber 1 is fixed in the fixed microgrooves 3, and the end face of the optical fiber 1 is coupled with the waveguide.
Lithium niobate is an excellent ferroelectric domain crystal, is electrically neutral at room temperature, but generates a pyroelectric effect with increasing temperature, particularly in the range of 100-200 ℃, the pyroelectric effect is particularly strong, so that a large amount of free charges are generated on the surface of the crystal, if the free charges are accumulated on the surface of the crystal, the stress distribution of the crystal is changed, even the crystal is possibly cracked, and in addition, the action effect of an external electric field can be counteracted, so that the electrical performance of the device is influenced.
In the invention, a metal film is arranged in the non-working area of the lithium niobate waveguide chip 4 and the fixed microgroove 3, and the lithium niobate waveguide chip 4 and the tube shell 5 are simultaneously grounded. Specifically, the non-working region of the lithium niobate waveguide chip 4 is a non-waveguide region; the inactive regions of the fixed micro-grooves 3 are all regions other than the grooves. Thus, an externally introduced temperature field can be rapidly expanded on the surfaces of the lithium niobate waveguide chip 4 and the fixed micro-groove 3, and the thermal stress caused by temperature difference is reduced; more importantly, the metalized lithium niobate waveguide chip 4 and the tube shell 5 are grounded simultaneously, so that the surface charge accumulation caused by the pyroelectric effect can be eliminated quickly.
Go toIn one particular embodiment, the metal film is a gold film; coefficient of thermal expansion of gold 14X 10-6/° c, coefficient of thermal expansion of lithium niobate 12.9 × 10-6/° c.
The traditional coupling technology of the lithium niobate modulator is to use high-temperature ultraviolet curing glue for bonding, and specifically, the lithium niobate modulator is formed by bonding a waveguide, a fixed micro-groove and an optical fiber through the ultraviolet curing glue. Due to the existence of differences of physical parameters such as elastic modulus, expansion coefficient, trimming modulus and the like of different materials, when the temperature of the working environment of the modulator changes, the degree of the temperature influence on the coupling structure material is different, and the performance of the device is reduced due to the displacement of the coupling structure caused by thermal stress; the ultraviolet curing adhesive is epoxy resin, and can be softened along with the rise of temperature (the ultraviolet curing adhesive begins to soften when the temperature is higher than 100 ℃), so that the alignment of the optical fiber and the fixed microgroove is deviated and even falls off, and the coupling power is reduced or no light is output.
Further, in the invention, the lithium niobate waveguide chip 4 and the fixed microgroove 3 are welded and bonded; after aligning the lithium niobate waveguide chip 4 with the fixed micro-groove 3, rapidly welding the waveguide chip and the fixed micro-groove 3 together by using laser beams, and properly annealing at 150 ℃ to effectively eliminate stress introduced by laser welding; coefficient of thermal expansion of gold 14X 10-6/° c, coefficient of thermal expansion of lithium niobate 12.9 × 10-6The temperature is equivalent to the temperature, the structural displacement is not easy to generate when the temperature changes, the inorganic glue is further coated around the welded interface, and the tensile strength of the device can be enhanced by baking for a plurality of hours at a certain temperature.
Further, the lithium niobate waveguide chip 4 and the fixed micro-groove 3 are made of the same material, and the fixed micro-groove 3 and the lithium niobate waveguide chip 4 have the same grooved surface and grooved direction of the waveguide.
In the invention, the fixed micro-groove 3 is a U-shaped groove, a V-shaped groove or a square groove, and the optical fiber 1 is fixed in the fixed micro-groove 3 to realize the coupling of the optical fiber 1 and the lithium niobate waveguide chip 4; the shape of the fixed micro-groove 3 is not limited herein, and the embodiment of the present invention is illustrated by taking a square-shaped groove as an example; the material of the fixed microgroove 3 is the same as that of the lithium niobate waveguide chip 4, and in a specific embodiment, the same batch of crystals used for manufacturing the lithium niobate waveguide chip 4 are selected; and secondly, the grooving surfaces and the grooving directions of the waveguides in the fixed micro-groove 3 and the lithium niobate waveguide chip 4 are the same, so that the difference of physical parameters of the materials is reduced.
Further, as shown in fig. 2, the optical fiber 1 is cured in the fixed micro-groove 3 by a high temperature resistant inorganic curing adhesive 2, which is selected to have a thermal expansion coefficient (12.9 × 10-6/deg.C) equivalent to that of lithium niobate, high hardness and good polishing performance.
Furthermore, the tail fiber of the modulator is a large mode field single mode fiber with a coating layer made of polyimide. The working temperature of the optical fiber with the coating layer made of polyimide can reach 250 ℃. The large mode field optical fiber is selected, so that the alignment tolerance of the lithium niobate waveguide chip 4 and the fixed microgroove 3 can be improved, and even at high temperature, the structure generates micro displacement and large power fluctuation can not be introduced; of course, the waveguide also needs to be matched with the mode field of the optical fiber through process control during manufacturing.
The main technical indexes of the high-temperature-resistant lithium niobate electro-optic modulator are shown in table 1.
TABLE 1 Main technical indexes of the high temperature-resistant lithium niobate electro-optic modulator of the present invention
A preparation method of a high-temperature-resistant lithium niobate electro-optical modulator comprises the following steps:
preparing a lithium niobate waveguide chip 4 and a fixed micro-groove 3;
forming a layer of metal film on the lithium niobate waveguide chip 4 and the non-working area of the fixed microgroove 3;
the lithium niobate waveguide chip 4 and the fixed micro-groove 3 are welded and bonded;
the optical fiber 1 is fixed in the fixed micro-groove 3.
Further, the fixed micro-groove 3 selects the lithium niobate crystals of the same batch for preparing the lithium niobate waveguide chip 4, and the grooving surface and the grooving direction of the waveguide in the fixed micro-groove 3 and the lithium niobate waveguide chip 4 are the same.
Further, the metallization process of the lithium niobate waveguide chip 4 and the fixed micro-groove 3 adopts an electroplating or chemical plating method, and in a specific embodiment, the thickness of the metal film is 1 micron.
Further, the fusion welding and bonding process of the lithium niobate waveguide chip 4 and the fixed micro-groove 3 comprises the following steps:
aligning the lithium niobate waveguide chip 4 and the fixed microgroove 3;
the lithium niobate waveguide chip 4 and the fixed microgrooves 3 are welded together by laser beams;
annealing;
and gluing and curing the periphery of the interface of the lithium niobate waveguide chip 4 and the fixed micro-groove 3.
Specifically, the stress introduced by laser fusion welding can be effectively eliminated by annealing at 150 ℃; coefficient of thermal expansion of gold 14X 10-6The temperature per DEG C is equivalent to the thermal expansion coefficient of lithium niobate, and the structure displacement is not easy to generate when the temperature changes; the periphery of the welded interface is further coated with inorganic glue and baked for several hours at a certain temperature, so that the tensile strength of the device can be enhanced.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention should be covered by the present patent.
Claims (8)
1. A high temperature resistant lithium niobate electro-optical modulator is characterized in that: the method comprises the following steps:
a lithium niobate waveguide chip (4);
an optical fiber (1) coupled to the lithium niobate waveguide chip (4); and
the fixed microgroove (3) is used for fixing the optical fiber (1) so as to realize the coupling of the optical fiber (1) and the lithium niobate waveguide chip (4);
the non-working areas of the lithium niobate waveguide chip (4) and the fixed microgrooves (3) are both provided with a layer of metal film.
2. The high temperature resistant lithium niobate electro-optic modulator of claim 1, wherein: the lithium niobate waveguide chip (4) is integrated in a tube shell (5), and the lithium niobate waveguide chip (4) and the tube shell (5) are simultaneously grounded.
3. The high temperature resistant lithium niobate electro-optic modulator of claim 1, wherein: the metal film is a gold film.
4. The high temperature resistant lithium niobate electro-optic modulator of claim 1, wherein: the lithium niobate waveguide chip (4) and the fixed microgrooves (3) are welded and bonded.
5. The high temperature resistant lithium niobate electro-optic modulator of claim 1, wherein: the lithium niobate waveguide chip (4) and the fixed microgrooves (3) are made of the same material, and the grooving surfaces and the grooving directions of the waveguides in the fixed microgrooves (3) and the lithium niobate waveguide chip (4) are the same.
6. The high temperature resistant lithium niobate electro-optic modulator of claim 1, wherein: the optical fiber (1) is solidified in the fixed microgroove (3) through the high-temperature resistant inorganic curing adhesive (2), and the thermal expansion coefficient of the high-temperature resistant inorganic curing adhesive (2) is equivalent to that of lithium niobate.
7. The method for preparing the high-temperature-resistant lithium niobate electro-optical modulator according to any one of claims 1 to 6, wherein the method comprises the following steps: the method comprises
Preparing a lithium niobate waveguide chip (4) and a fixed microgroove (3);
forming a layer of metal film on the non-working area of the lithium niobate waveguide chip (4) and the fixed microgrooves (3);
welding and bonding the lithium niobate waveguide chip (4) and the fixed microgrooves (3);
the optical fiber (1) is fixed in the fixed microgroove (3).
8. The method for preparing the high-temperature-resistant lithium niobate electro-optical modulator according to claim 7, wherein the method comprises the following steps: the fusion welding and bonding process of the lithium niobate waveguide chip (4) and the fixed microgrooves (3) comprises the following steps:
aligning the lithium niobate waveguide chip (4) and the fixed microgroove (3);
the lithium niobate waveguide chip (4) and the fixed microgrooves (3) are welded together by laser beams in a rapid welding way;
annealing;
and gluing and curing the periphery of the interface of the lithium niobate waveguide chip (4) and the fixed micro-groove (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110536666.9A CN113189799A (en) | 2021-05-17 | 2021-05-17 | High-temperature-resistant lithium niobate electro-optical modulator and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110536666.9A CN113189799A (en) | 2021-05-17 | 2021-05-17 | High-temperature-resistant lithium niobate electro-optical modulator and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113189799A true CN113189799A (en) | 2021-07-30 |
Family
ID=76982213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110536666.9A Pending CN113189799A (en) | 2021-05-17 | 2021-05-17 | High-temperature-resistant lithium niobate electro-optical modulator and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113189799A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4867524A (en) * | 1988-09-08 | 1989-09-19 | United Technologies Corporation | Metallic bond for mounting of optical fibers to integrated optical chips |
| JPH10332983A (en) * | 1997-05-30 | 1998-12-18 | Kyocera Corp | Optical waveguide device |
| US6044184A (en) * | 1998-03-31 | 2000-03-28 | Litton Systems Inc. | Integrated optics chip with reduced thermal errors due to pyroelectric effects |
| JP2001166164A (en) * | 1991-03-27 | 2001-06-22 | Sony Corp | LiNbO3 THIN-FILM OPTICAL WAVEGUIDE DEVICE |
| CN1574618A (en) * | 2003-06-05 | 2005-02-02 | 富士通媒体部品株式会社 | Surface acoustic wave device and method of producing the same |
-
2021
- 2021-05-17 CN CN202110536666.9A patent/CN113189799A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4867524A (en) * | 1988-09-08 | 1989-09-19 | United Technologies Corporation | Metallic bond for mounting of optical fibers to integrated optical chips |
| JP2001166164A (en) * | 1991-03-27 | 2001-06-22 | Sony Corp | LiNbO3 THIN-FILM OPTICAL WAVEGUIDE DEVICE |
| JPH10332983A (en) * | 1997-05-30 | 1998-12-18 | Kyocera Corp | Optical waveguide device |
| US6044184A (en) * | 1998-03-31 | 2000-03-28 | Litton Systems Inc. | Integrated optics chip with reduced thermal errors due to pyroelectric effects |
| CN1574618A (en) * | 2003-06-05 | 2005-02-02 | 富士通媒体部品株式会社 | Surface acoustic wave device and method of producing the same |
Non-Patent Citations (1)
| Title |
|---|
| 何风平，李刚毅: "铌酸锂波导调制器的相位漂移机理", 《光电器件》, vol. 28, no. 2, 30 April 2007 (2007-04-30), pages 6 - 7 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4564262A (en) | Fiber optic directional coupler | |
| US4867524A (en) | Metallic bond for mounting of optical fibers to integrated optical chips | |
| CA1253375A (en) | Fiber optic directional coupler | |
| US4601541A (en) | Fiber optic directional coupler | |
| JP2568112B2 (en) | Integrated optic system and connection method | |
| CN101915965B (en) | Grating coupler and package structure thereof | |
| CN203705693U (en) | Optical module | |
| WO2018165061A1 (en) | Universal photonic adaptor for coupling an optical connector to an optoelectronic substrate | |
| US4991922A (en) | Optical fiber coupler and method | |
| US5042896A (en) | Polarization device | |
| CN111045228A (en) | Graphene-based D-type dual-core optical fiber M-Z modulator and preparation method thereof | |
| CN113189799A (en) | High-temperature-resistant lithium niobate electro-optical modulator and preparation method thereof | |
| EP0457761B1 (en) | Methods for rugged attachment of fibers to integrated optics chips and product thereof | |
| CA2050558C (en) | Packaging of silicon optical components | |
| US20130170789A1 (en) | Optical fiber array structure | |
| CN109655975B (en) | Erasable integrated optical waveguide monitoring device based on phase-change material | |
| JPH03265802A (en) | Embedded type quartz optical waveguide and production thereof | |
| JP6767925B2 (en) | Optical module and its manufacturing method | |
| CN201464752U (en) | Tunable filter based on transparent photoelectric ceramic | |
| WO2002079831A1 (en) | Optical fiber array and method of manufacturing the optical fiber array | |
| JPH0735958A (en) | Parallel transmission module | |
| CN212623196U (en) | Optical fiber array structure | |
| CN114325954A (en) | Novel optical fiber array structure and manufacturing method thereof | |
| CN211627882U (en) | Precise optical assembly for laser coupling | |
| WO2022018816A1 (en) | Optical module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210730 |