CN113176267A - Photomask highlight detection process - Google Patents
Photomask highlight detection process Download PDFInfo
- Publication number
- CN113176267A CN113176267A CN202110488497.6A CN202110488497A CN113176267A CN 113176267 A CN113176267 A CN 113176267A CN 202110488497 A CN202110488497 A CN 202110488497A CN 113176267 A CN113176267 A CN 113176267A
- Authority
- CN
- China
- Prior art keywords
- light
- photomask
- plano
- convex lens
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 10
- 230000007547 defect Effects 0.000 claims abstract description 7
- 238000005286 illumination Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention discloses a photomask highlight detection process, which comprises the following steps: A. firstly, placing a photomask to be detected on a detection platform, wherein the detection platform is of an annular structure, and a photomask exposure area is positioned in the center of the detection platform; B. installing a light gathering system below the detection platform; C. then a plurality of LED light sources are arranged below the polymerization light system; D. during detection, the plurality of LED light sources are lightened, light rays emitted by the plurality of LED light sources are polymerized by the polymerization light system to form a strand of strong light, the strong light irradiates the surface of the photomask, and a detector can find out the defects on the surface of the photomask.
Description
Technical Field
The invention relates to the technical field of photomask detection, in particular to a photomask highlight detection process.
Background
Mask (Mask) for forming a pattern on a semiconductor by photolithography in the process of manufacturing an IC, which must use the principle of Mask action to copy the pattern on a wafer, similar to developing a photo, using a negative film to copy the image on the photo; quartz glass, metal chromium and photosensitive resist, wherein the product is prepared by taking quartz glass as a substrate, plating a layer of metal chromium and photosensitive resist on the substrate to form a photosensitive material, exposing a designed circuit pattern on the photosensitive resist through electronic laser equipment, developing the exposed area to form a circuit pattern on the metal chromium to form a PHOTOMASK similar to an exposed negative, then applying the PHOTOMASK to the integrated circuit for projection positioning, and photoetching the projected circuit through an integrated circuit photoetching machine.
The photomask needs to be inspected after use, and the conventional strong light inspection process has poor inspection effect, so that improvement is needed.
Disclosure of Invention
The present invention is directed to a photomask glare detection process to solve the above problems.
In order to achieve the purpose, the invention provides the following technical scheme: a photomask highlight detection process comprises the following steps:
A. firstly, placing a photomask to be detected on a detection platform, wherein the detection platform is of an annular structure, and a photomask exposure area is positioned in the center of the detection platform;
B. installing a light gathering system below the detection platform;
C. then a plurality of LED light sources are arranged below the polymerization light system;
D. during detection, the plurality of LED light sources are lightened, light rays emitted by the plurality of LED light sources are polymerized by the polymerization light system to form a strand of strong light, the strong light irradiates the surface of the photomask, and a detector can find out defects on the surface of the photomask.
Preferably, the light converging system in step B includes a light combiner and a condenser lens group, the light combiner is provided with a light guide column corresponding to the LED light source, and the light guide column is a circular or polygonal conical cylinder; the light outlet of the light guide column forms a light outlet surface of the light combiner.
Preferably, the condenser group includes a first plano-convex lens and a second plano-convex lens, the first plano-convex lens and the second plano-convex lens are symmetrically disposed, convex surfaces of the first plano-convex lens and the second plano-convex lens are opposite, a plane of the first plano-convex lens is an incident plane and is close to a light emitting plane of the light combiner, and a plane of the second plano-convex lens is a light emitting plane.
Preferably, 3-5 LED light sources are arranged in the step C.
Preferably, the LED lamp further comprises a light source controller, the light source controller is electrically connected with the plurality of LED light sources, and the light source controller is used for controlling the illumination time and the brightness of the LED light sources.
Compared with the prior art, the invention has the beneficial effects that: the detection process adopted by the invention is simple to operate and low in detection cost, and can effectively detect the quality defect of the surface of the photomask; the adopted light converging system can further condense the light irradiated by the LED light sources to form uniform light spots in a focusing state, the light divergence angle is smaller, and the detection precision is further improved.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a schematic diagram of a polymeric optical system of the present invention;
in the figure: the LED light source comprises a light combiner 1, a condenser group 2, an LED light source 3, a light guide column 4, a first plano-convex lens 5 and a second plano-convex lens 6.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-2, the present invention provides a technical solution: a photomask highlight detection process comprises the following steps:
A. firstly, placing a photomask to be detected on a detection platform, wherein the detection platform is of an annular structure, and a photomask exposure area is positioned in the center of the detection platform;
B. installing a light gathering system below the detection platform;
C. then a plurality of LED light sources are arranged below the polymerization light system;
D. during detection, the plurality of LED light sources are lightened, light rays emitted by the plurality of LED light sources are polymerized by the polymerization light system to form a strand of strong light, the strong light irradiates the surface of the photomask, and a detector can find out defects on the surface of the photomask.
In the invention, the light polymerization system in the step B comprises a light combiner 1 and a condenser lens group 2, wherein a light guide column 4 corresponding to an LED light source 3 is arranged on the light combiner 1, and the light guide column 4 is a circular or polygonal conical cylinder; the light outlet of the light guide column 4 forms a light outlet surface of the light combiner; the condenser group 2 comprises a first plano-convex lens 5 and a second plano-convex lens 6, the first plano-convex lens 5 and the second plano-convex lens 6 are symmetrically arranged, the convex surfaces of the first plano-convex lens 5 and the second plano-convex lens 6 are opposite, the plane of the first plano-convex lens 5 is an incident plane and is close to the light emitting plane of the light combiner, and the plane of the second plano-convex lens 6 is a light emitting plane; in the step C, 3-5 LED light sources are arranged; the LED lamp also comprises a light source controller, wherein the light source controller is electrically connected with the LED light sources and is used for controlling the illumination time and the brightness of the LED light sources.
During detection, the plurality of LED light sources are lightened, light rays emitted by the plurality of LED light sources are polymerized by the polymerization light system to form a strand of strong light, the strong light irradiates the surface of the photomask, and a detector can find out defects on the surface of the photomask.
In conclusion, the detection process adopted by the invention is simple to operate and low in detection cost, and can effectively detect the quality defects of the surface of the photomask; the adopted light converging system can further condense the light irradiated by the LED light sources to form uniform light spots in a focusing state, the light divergence angle is smaller, and the detection precision is further improved.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (5)
1. A photomask highlight detection process is characterized in that: the method comprises the following steps:
A. firstly, placing a photomask to be detected on a detection platform, wherein the detection platform is of an annular structure, and a photomask exposure area is positioned in the center of the detection platform;
B. installing a light gathering system below the detection platform;
C. then a plurality of LED light sources are arranged below the polymerization light system;
D. during detection, the plurality of LED light sources are lightened, light rays emitted by the plurality of LED light sources are polymerized by the polymerization light system to form a strand of strong light, the strong light irradiates the surface of the photomask, and a detector can find out defects on the surface of the photomask.
2. The process of claim 1, wherein the step of inspecting the reticle hard light comprises: the light gathering system in the step B comprises a light gathering device (1) and a condenser lens group (2), a light guide column (4) corresponding to the LED light source (3) is arranged on the light gathering device (1), and the light guide column (4) is a circular or polygonal conical cylinder; and the light outlet of the light guide column (4) forms a light outlet surface of the light combiner.
3. The process of claim 2, wherein the step of inspecting the reticle hard light comprises: the condenser group (2) comprises a first plano-convex lens (5) and a second plano-convex lens (6), the first plano-convex lens (5) and the second plano-convex lens (6) are symmetrically arranged, the convex surfaces of the first plano-convex lens (5) and the second plano-convex lens (6) are opposite, the plane of the first plano-convex lens (5) is an incident plane and is close to the light emergent plane of the light combiner, and the plane of the second plano-convex lens (6) is the light emergent plane.
4. The process of claim 1, wherein the step of inspecting the reticle hard light comprises: in the step C, 3-5 LED light sources 3 are arranged.
5. The process of claim 1, wherein the step of inspecting the reticle hard light comprises: the LED lamp also comprises a light source controller, wherein the light source controller is electrically connected with the LED light sources and is used for controlling the illumination time and the brightness of the LED light sources.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110488497.6A CN113176267A (en) | 2021-05-06 | 2021-05-06 | Photomask highlight detection process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110488497.6A CN113176267A (en) | 2021-05-06 | 2021-05-06 | Photomask highlight detection process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113176267A true CN113176267A (en) | 2021-07-27 |
Family
ID=76928144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110488497.6A Pending CN113176267A (en) | 2021-05-06 | 2021-05-06 | Photomask highlight detection process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113176267A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4541715A (en) * | 1982-01-12 | 1985-09-17 | Hitachi, Ltd. | Apparatus for detecting contaminants on the reticle of exposure system |
| JPH08137091A (en) * | 1994-11-08 | 1996-05-31 | Miyazaki Oki Electric Co Ltd | Visual inspection device for mask |
| US6023328A (en) * | 1998-02-23 | 2000-02-08 | Micron Technology, Inc. | Photomask inspection method and apparatus |
| CN201359599Y (en) * | 2009-01-16 | 2009-12-09 | 深圳市路维电子有限公司 | Photo-mask detection device |
| CN105717739A (en) * | 2014-12-05 | 2016-06-29 | 家登精密工业股份有限公司 | Photomask inspection machine |
| CN106402797A (en) * | 2016-08-08 | 2017-02-15 | 广州市雅江光电设备有限公司 | Light condensation and composition system and method for multiple LED light sources |
-
2021
- 2021-05-06 CN CN202110488497.6A patent/CN113176267A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4541715A (en) * | 1982-01-12 | 1985-09-17 | Hitachi, Ltd. | Apparatus for detecting contaminants on the reticle of exposure system |
| JPH08137091A (en) * | 1994-11-08 | 1996-05-31 | Miyazaki Oki Electric Co Ltd | Visual inspection device for mask |
| US6023328A (en) * | 1998-02-23 | 2000-02-08 | Micron Technology, Inc. | Photomask inspection method and apparatus |
| CN201359599Y (en) * | 2009-01-16 | 2009-12-09 | 深圳市路维电子有限公司 | Photo-mask detection device |
| CN105717739A (en) * | 2014-12-05 | 2016-06-29 | 家登精密工业股份有限公司 | Photomask inspection machine |
| CN106402797A (en) * | 2016-08-08 | 2017-02-15 | 广州市雅江光电设备有限公司 | Light condensation and composition system and method for multiple LED light sources |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI550357B (en) | A inspection method, an inspection apparatus, an exposure management method, an exposure system, and a semiconductor element | |
| US7327449B2 (en) | Exposure apparatus inspection method and exposure apparatus | |
| JPS58120155A (en) | Detecting device for extraneous substance on reticle | |
| KR100357659B1 (en) | Fresnel zone mask for pupilgram | |
| KR20100069503A (en) | Detecting method of reticle error | |
| US6558855B2 (en) | Phase shift mask and manufacturing the same | |
| JP3200244B2 (en) | Scanning exposure equipment | |
| JP4846510B2 (en) | Surface position measurement system and exposure method | |
| KR20090013094A (en) | Exposure apparatus and device manufacturing method | |
| TW200903182A (en) | Aberration measurement method, exposure apparatus, and device manufacturing method | |
| CN113176267A (en) | Photomask highlight detection process | |
| KR20010083591A (en) | Removal particle system in stepper | |
| CN220773415U (en) | Photomask inspection apparatus | |
| JPH1116819A (en) | Exposure method and substrate holder | |
| JP7071483B2 (en) | Lithography equipment, pattern forming method and article manufacturing method | |
| US20240004306A1 (en) | Light source apparatus, lithography apparatus, and article manufacturing method | |
| US10331036B2 (en) | Exposure mask, exposure apparatus and method for calibrating an exposure apparatus | |
| KR100660542B1 (en) | Overlay measurement equipment for semiconductor device fabrication equipment | |
| JP2004006783A (en) | Projection optical system, exposure device, exposure method, and method of manufacturing micro device | |
| JP2004061915A (en) | Method for inspection mask and aligner | |
| JP2004354230A (en) | Position detection device, exposure apparatus and exposure method | |
| JPS61194723A (en) | Optical device | |
| JPH06204104A (en) | Measuring method for illuminance distribution and projection aligner using same | |
| KR100888933B1 (en) | Apparatus and method for measuring hazes of photomask surface using euv | |
| JP2001015409A (en) | Aligner |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210727 |