CN113161039A - Novel conductive film and manufacturing method thereof - Google Patents
Novel conductive film and manufacturing method thereof Download PDFInfo
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- CN113161039A CN113161039A CN202010015170.2A CN202010015170A CN113161039A CN 113161039 A CN113161039 A CN 113161039A CN 202010015170 A CN202010015170 A CN 202010015170A CN 113161039 A CN113161039 A CN 113161039A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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Abstract
The invention discloses a manufacturing method of a novel conductive film, which comprises the following steps: preparing a conductive film, wherein the conductive film comprises a transparent substrate, a structural layer which is positioned on the transparent substrate and is provided with a pattern groove, and a conductive grid which is embedded in the pattern groove and is provided with abnormity; and preparing a metal layer with a smooth surface on the surface of the conductive grid, wherein the metal layer is filled in the abnormal part of the conductive grid, and the conductivity of the metal layer is consistent with that of the conductive grid. The invention also discloses a novel conductive film, which comprises a transparent substrate, a structural layer, a conductive grid and a metal layer, wherein the structural layer is positioned on the transparent substrate and provided with a pattern groove, the conductive grid is embedded in the pattern groove, the metal layer covers the conductive grid, the conductive grid is abnormal, and the metal layer is filled in the abnormal part on the surface of the conductive grid. By the method, the novel conductive film with uniform resistivity can be produced in batches, the yield is high, the process is simple and reliable, and the performance of the produced novel conductive film is excellent.
Description
Technical Field
The invention relates to the technical field of conductive films, in particular to a novel conductive film and a manufacturing method thereof.
Background
The transparent conductive film has high transmittance and good conductivity, and is widely applied to the fields of touch screens, electromagnetic shielding, photovoltaic devices and the like, along with the development of scientific technology, more and more electronic devices develop towards flexibility and lightness, and the demand on the transparent conductive film is increasing day by day.
ITO (Indium tin oxide) transparent conductive films are the most widely used conductive films at present, but they have poor flexibility, are greatly affected by temperature, and have high manufacturing cost, toxicity and pollution. To overcome the disadvantages of ITO conductive films, UV imprinting is increasingly used in the fabrication of transparent conductive films. And the UV stamping method comprises the steps of using a mould to carry out roll-to-roll stamping process, stamping pattern grooves on the UV layer, filling conductive ink, and sintering to form a conductive grid. Relatively high copper or silver nanopastes for conductive inks. However, this method of filling conductive ink causes surface roughness or unevenness of conductive mesh and a certain probability of disconnection due to micro-deformation of the substrate caused by uniformity of filling and sintering. This may affect the conductivity of the conductive film and make the conductivity of the conductive film non-uniform, thereby affecting the sensing sensitivity of the touch screen.
The foregoing description is provided for general background information and is not admitted to be prior art.
Disclosure of Invention
The invention aims to provide a novel conductive film with uniform resistivity and a manufacturing method thereof.
The invention provides a manufacturing method of a novel conductive film, which comprises the following steps:
preparing a conductive film, wherein the conductive film comprises a transparent substrate, a structural layer and a conductive grid, the structural layer is positioned on the transparent substrate and provided with a pattern groove, and the conductive grid is embedded in the pattern groove and provided with an abnormality;
and preparing a metal layer with a smooth surface on the surface of the conductive grid, wherein the metal layer also fills the abnormal part of the conductive grid, and the conductivity of the metal layer is consistent with that of the conductive grid.
In one embodiment, the conductive mesh is made of a silver paste or a silver alloy paste with a purity of 95%.
In one embodiment, in the step of preparing a conductive film, a specific manufacturing method of the conductive film includes:
providing the transparent substrate;
coating a layer of UV glue on the transparent substrate to form the structural layer;
providing a mould with the pattern groove;
impressing the mold on the structural layer to form the pattern groove on the structural layer;
curing the structural layer and then demolding;
coating the conductive material in the pattern groove in a scraping mode;
and curing the conductive material to form the conductive grid, so as to obtain the conductive film.
In one embodiment, in the step of forming the conductive mesh: and sintering the conductive material for 30-60min at 110-130 ℃ to form the conductive grid.
In one embodiment, in the step of preparing a metal layer with a smooth surface, a specific manufacturing method of the metal layer includes:
providing a groove body, and flatly laying the conductive film into the groove body for fixing;
sensitizing the conductive grid;
providing chemical copper plating solution with the pH value of 10-12;
pouring the chemical copper plating solution into the tank body;
heating the chemical copper plating solution to 30-40 ℃, uniformly stirring, and then adding 37-42% of formaldehyde solution by mass;
and forming the metal layer on the surface of the conductive grid after standing.
In one embodiment, in the sensitizing step: and (3) washing the conductive grid for 30s by using pure water, spraying a mixed solution of stannous chloride with the mass fraction of 1-5% and hydrochloric acid with the mass fraction of 4-8%, and cleaning by using the pure water after 3-5 min.
In one embodiment, the electroless copper plating solution includes a main salt, a complexing agent, and a PH adjustor.
In one embodiment, the main salt is selected from one or more of copper sulfate, copper chloride and copper nitrate with the mass fraction of 1.2-2%; the complexing agent is selected from one or more of 1.0-1.8 mass percent of potassium sodium tartrate, sodium citrate, EDTA disodium and triethanolamine; the PH regulator is selected from one or more of sodium hydroxide or potassium hydroxide with the mass fraction of 1.2-2%.
In one embodiment, in the step of resting: and standing for 10-120 min at 30-60 ℃ to enable copper atoms in the chemical copper plating solution to deposit on the surface of the conductive grid to form a copper layer.
The invention also provides a novel conductive film, which comprises a transparent substrate, a structural layer, a conductive grid and a metal layer, wherein the structural layer is positioned on the transparent substrate and provided with a pattern groove, the conductive grid is embedded in the pattern groove, the metal layer covers the conductive grid, the conductive grid is abnormal, and the metal layer is filled in the abnormal part on the surface of the conductive grid.
In one embodiment, the conductive mesh is made of silver paste or silver alloy paste with a purity of 95%, the metal layer is made of copper, and the conductivity of the conductive mesh is consistent with that of the metal layer.
According to the manufacturing method of the novel conductive film, the metal layer is used for filling the abnormal part of the conductive grid, the conductivity of the metal layer is consistent with that of the conductive grid, the novel conductive film with uniform resistivity can be produced in batches, the yield is high, the process is simple and reliable, and the performance of the produced novel conductive film is excellent.
Drawings
FIG. 1 is a flow chart illustrating steps of a method for forming a novel conductive film according to an embodiment of the present invention;
FIG. 2 is a flow chart illustrating steps of a method for forming a novel conductive film according to an embodiment of the present invention;
FIG. 3 is a flowchart illustrating steps of a method for forming a metal layer according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of the novel conductive film according to the embodiment of the invention.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Referring to fig. 1 to fig. 3, a method for manufacturing a novel conductive film according to an embodiment of the present invention includes:
s1: preparing a conductive film, wherein the conductive film comprises a transparent substrate, a structural layer which is positioned on the transparent substrate and is provided with a pattern groove, and a conductive grid which is embedded in the pattern groove and is provided with abnormity;
s2: and preparing a metal layer with a smooth surface on the surface of the conductive grid, wherein the metal layer is filled in the abnormal part of the conductive grid, and the conductivity of the metal layer is consistent with that of the conductive grid.
The anomalies of the conductive mesh include one or more of surface roughness of the conductive mesh or non-uniformity of the conductive mesh or fractures of the conductive mesh; the anomalies are caused by the scratching unevenness and/or by the sintering resulting in micro-deformations of the conductive grid.
In this embodiment, the material of the conductive mesh is silver paste or silver alloy paste with a purity of 95%, where the purity of 95% means that the mass fraction of silver or silver alloy in the silver paste or silver alloy paste is 95%.
In step S1, a specific method for manufacturing the conductive film is:
s11: providing a transparent substrate;
s12: coating a layer of UV glue on a transparent substrate to form a structural layer;
s13: providing a die with a pattern groove;
s14: imprinting a mould on the structural layer to form a pattern groove on the structural layer;
s15: demolding after the structural layer is solidified;
s16: scraping the conductive material into the pattern groove;
s17: and curing the conductive material to form a conductive grid, thereby obtaining the conductive film.
In the present embodiment, the mold is a metal mold, and the thickness thereof is 200 to 300 um; the surface of the mould is provided with a pattern bulge which is complementary with the pattern groove, the height of the pattern bulge is 2-10 um, the width of the pattern bulge is 3-8um, and the section of the pattern bulge is trapezoidal, rectangular or trapezoid-like; the thickness of the conductive grid is less than the depth of the pattern groove.
In step S17: and sintering the conductive material filled in the groove of the pattern for 30-60min at 110-130 ℃ to form a conductive grid.
In step S2, a metal layer is prepared by electroless plating, and the specific manufacturing method of the metal layer is as follows:
s21: providing a groove body, and flatly laying and placing the conductive film into the groove body for fixing;
s22: sensitizing the conductive grid;
s23: providing chemical copper plating solution with the pH value of 10-12, and pouring the chemical copper plating solution into the tank body;
s24: heating the chemical copper plating solution to 30-60 ℃, uniformly stirring, and then adding 37-42% of formaldehyde solution by mass;
s25: and forming a metal layer on the surface of the conductive grid after standing.
In other embodiments, the metal layer is formed by electroplating.
In this embodiment, the metal layer is a copper layer, and the electroless copper plating solution includes a main salt, a complexing agent and a PH adjuster, wherein the main salt is selected from one or more of copper sulfate, copper chloride and copper nitrate; the complexing agent is one or more selected from potassium sodium tartrate, sodium citrate, EDTA disodium and triethanolamine; the PH regulator is selected from one or more of sodium hydroxide and potassium hydroxide, and is used for regulating the PH value of the chemical copper plating solution to 10-12. Preferably, the electroless copper plating solution comprises 1.2-2% by mass of copper sulfate, 1.0-1.8% by mass of potassium sodium tartrate and 1.2-2% by mass of sodium hydroxide. More preferably, the electroless copper plating solution comprises 1.2 to 1.4 mass% of copper sulfate, 1.0 to 1.2 mass% of sodium potassium tartrate and 1.2 to 1.4 mass% of sodium hydroxide. The mass fraction of copper sulfate is lower than 1.2 percent and/or the mass fraction of potassium sodium tartrate is lower than 1.0 percent, which can cause slow reduction reaction rate, cause insufficient thickness of a deposited copper layer, unreliable repair of abnormal parts, or long repair period, and is not beneficial to automatic repair. A copper sulfate mass fraction higher than 2% and/or a potassium sodium tartrate mass fraction higher than 1.8% may result in an excessively fast reduction reaction, insufficient density of the deposited copper layer, influence on uniformity of conductivity, and be disadvantageous in controlling the thickness of the deposited copper layer.
In step S22: and (3) washing the conductive grid for 30s by using pure water, spraying 1 sensitizing solution, and cleaning by using the pure water after 3-5 min. The reduction capability of the surface of the conductive grid is increased by sensitizing the conductive grid.
The sensitizing solution comprises stannous chloride with the mass fraction of 1-5% and hydrogen chloride with the mass fraction of 4-8%, so that the reducing capacity of the surface of the conductive film is enhanced, and more preferably, the mass fraction of the stannous chloride is 1-3%. In particular, stannous produces a sparingly soluble product Sn (OH) upon washing with water due to hydrolysis1～5Cl0～5The slightly soluble product is deposited under the action of condensation, so that a reducing liquid film with a reducing action is formed on the surface of the conductive film. The mass fraction of stannous chloride is lower than 1% and/or the pH value of the sensitizing solution is lower, so that the deposition amount of the slightly soluble product is insufficient, the density of metal crystal nuclei generated by subsequent reduction is lower, and the deposition rate of copper is too low. Mass fraction of stannous chloride higher than 5% and/or high pH value of the sensitizing solution can cause excessive stannous to be adsorbed on the surface of the conductive grid, so that the bonding force of the plating layer is reduced, and the control of the thickness of the deposited copper layer is not facilitated.
In step S24, the electroless copper plating solution is stirred, and a formaldehyde solution is added and mixed to obtain a mixed chemical solution with a formaldehyde mass fraction of 1.0 to 1.8%, and the conductive film is immersed in the mixed chemical solution in the tank. The formaldehyde solution used for preparing the mixed chemical solution is, for example, a formaldehyde solution with a mass fraction of 37-42%. More preferably, the mass fraction of formaldehyde is 1% to 1.2%. The mass fraction of formaldehyde is lower than 1%, which leads to slow reduction reaction rate, insufficient thickness of deposited copper layer, unreliable repair of abnormal part, or long repair period, which is not favorable for automatic repair. A mass fraction of formaldehyde higher than 1.8% leads to an excessively fast reduction reaction, insufficient density of the deposited copper layer, poor uniformity of conductivity, and unfavorable control of the thickness of the deposited copper layer.
In step S26: and the standing step is carried out for 10-120 min at the temperature of 30-60 ℃, and the total thickness of the conductive grid and the deposited copper layer is controlled to be smaller than the depth of the pattern groove. Preferably, standing for 20-60 min at 30-40 ℃, and controlling the thickness of the deposited copper layer to be 1-3 μm. The thickness of the deposited copper layer can be adjusted by adjusting the concentrations of the main salt, the complexing agent and the reducing agent in the mixed chemical solution, the temperature of the mixed chemical solution and the standing time. During the copper plating process, the silver or gold in the conductive grid acts as a catalyst, the cuprous oxide generated by incomplete reaction proceeds from the catalytic reduction reaction, and preferably, the metal material forming the conductive grid comprises silver, which has excellent catalytic ability for the reduction reaction. The reduction reaction rate near the conductive grid is far higher than that of the surface of the structural layer, and finally, copper generated by reduction is deposited on the surface of the conductive grid and fills the abnormal part of the conductive grid, so that the abnormal conductive grid is repaired.
Referring to fig. 4, the embodiment of the invention further provides a novel conductive film manufactured by the manufacturing method of the novel conductive film, which includes a transparent substrate 11, a structural layer 12 having a pattern groove 121 on the transparent substrate 11, a conductive mesh 13 embedded in the pattern groove 121, and a metal layer 14 covering the conductive mesh 13. Wherein the conductive grid 13 has an anomaly, and the metal layer 14 also fills the anomaly of the conductive grid 13 or the surface of the conductive grid 13 without the anomaly.
In the present embodiment, the conductive mesh 13 has an anomaly; the anomalies of the conductive mesh 13 include one or more of surface roughness of the conductive mesh 13 or non-uniformity of the conductive mesh 13 or fractures of the conductive mesh 13; this anomaly occurs due to uneven blade coating or/and to micro-deformation of the conductive grid 13 caused by sintering.
In other embodiments, the conductive mesh 13 may not have any abnormality, and the metal layer 14 covers the surface of the conductive mesh 13 without abnormality.
The material of the conductive grid 13 is silver paste or silver alloy paste with the purity of 95%, the material of the metal layer 14 is copper, and the conductivity of the conductive grid 13 is consistent with that of the metal layer 14.
The conductive grid 13 is a continuous grid which is uniformly or non-uniformly arranged, and the shape of the grid is, for example, one of square, rectangle, rhombus, diamond, pentagon, hexagon and random grid or the combination of at least two of the grids; the thickness of the conductive grid 13 is 2 to 8um and the thickness of the metal layer 14 is 1 to 2 um.
The thickness of structural layer 12 is 2 to 10um, and the degree of depth of figure recess is 2 to 10um, and the width is 3-8um, and its cross-section is trapezoidal or rectangle or class trapezoidal.
The transparent substrate 11 is made of PET or PC.
Experiments prove that the novel conductive film provided by the invention has low resistance, for example, the resistance of a single-channel within 32 inches of a graph is between 0.8k omega and 1.0k omega.
Example 1:
the mixed chemical solution of the embodiment is composed of the following substances by mass percent: 1.2% of copper sulfate, 1.0% of sodium potassium tartrate, 1.2% of sodium hydroxide and 1.0% of formaldehyde, controlling the temperature of the mixed chemical solution to be 30-35 ℃, and standing for 1 hour.
Example 2:
the mixed chemical solution of the embodiment is composed of the following substances by mass percent: 1.2% of copper sulfate, 1.0% of sodium potassium tartrate, 1.2% of sodium hydroxide and 1.0% of formaldehyde, controlling the temperature of the mixed chemical solution to be 35-40 ℃, and standing for 1 hour.
Example 3:
the mixed chemical solution of the embodiment is composed of the following substances by mass percent: 1.2% of copper sulfate, 1.0% of sodium potassium tartrate, 1.2% of sodium hydroxide and 1.3% of formaldehyde, controlling the temperature of the mixed chemical solution to be 30-35 ℃, and standing for 1 h.
Example 4:
the mixed chemical solution of the embodiment is composed of the following substances by mass percent: 1.5% of copper sulfate, 1.2% of sodium potassium tartrate, 1.5% of sodium hydroxide and 1.3% of formaldehyde, controlling the temperature of the mixed chemical solution to be 35-40 ℃, and standing for 1 h.
Example 5:
the mixed chemical solution of the embodiment is composed of the following substances by mass percent: 1.5% of copper sulfate, 1.2% of sodium potassium tartrate, 1.5% of sodium hydroxide and 1.3% of formaldehyde, controlling the temperature of the mixed chemical solution to be 35-40 ℃, and standing for 30 min.
Example 6:
the mixed chemical solution of the embodiment is composed of the following substances by mass percent: 1.5% of copper sulfate, 1.2% of sodium potassium tartrate, 1.5% of sodium hydroxide and 1.5% of formaldehyde, controlling the temperature of the mixed chemical solution to be 35-40 ℃, and standing for 30 min.
Example 7:
the mixed chemical solution of the embodiment is composed of the following substances by mass percent: 1.8% of copper sulfate, 1.4% of sodium potassium tartrate, 1.8% of sodium hydroxide and 1.5% of formaldehyde, controlling the temperature of the mixed chemical solution to be 55-60 ℃, and standing for 1 h.
Example 8:
the mixed chemical solution of the embodiment is composed of the following substances by mass percent: 2% of copper sulfate, 1.8% of sodium potassium tartrate, 2% of sodium hydroxide and 1.8% of formaldehyde, controlling the temperature of the mixed chemical solution to be 55-60 ℃, and standing for 1 h.
The conditions, copper deposition rates and thickness of the deposited copper layers for each of examples 1-8 are shown in Table 1.
TABLE 1 implementation conditions, copper deposition rate and thickness of the deposited copper layer for each example
In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. It will be understood that when an element such as a layer, region or substrate is referred to as being "formed on," "disposed on" or "located on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly formed on" or "directly disposed on" another element, there are no intervening elements present.
In this document, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms can be understood in a specific case to those of ordinary skill in the art.
In this document, the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", "vertical", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for the purpose of clarity and convenience of description of the technical solutions, and thus, should not be construed as limiting the present invention.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
As used herein, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, including not only those elements listed, but also other elements not expressly listed.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (11)
1. A manufacturing method of a novel conductive film is characterized by comprising the following steps:
preparing a conductive film, wherein the conductive film comprises a transparent substrate, a structural layer and a conductive grid, the structural layer is positioned on the transparent substrate and provided with a pattern groove, and the conductive grid is embedded in the pattern groove and provided with an abnormality;
and preparing a metal layer with a smooth surface on the surface of the conductive grid, wherein the metal layer also fills the abnormal part of the conductive grid, and the conductivity of the metal layer is consistent with that of the conductive grid.
2. The method of manufacturing a novel conductive film according to claim 1, wherein the conductive mesh is made of a silver paste or a silver alloy paste having a purity of 95%.
3. The method for manufacturing a novel conductive film according to claim 1, wherein in the step of manufacturing a conductive film, the method for manufacturing a conductive film comprises:
providing the transparent substrate;
coating a layer of UV glue on the transparent substrate to form the structural layer;
providing a mould with the pattern groove;
impressing the mold on the structural layer to form the pattern groove on the structural layer;
curing the structural layer and then demolding;
coating the conductive material in the pattern groove in a scraping mode;
and curing the conductive material to form the conductive grid, so as to obtain the conductive film.
4. The method of manufacturing a novel conductive film according to claim 3, wherein in the step of forming the conductive mesh: and sintering the conductive material for 30-60min at 110-130 ℃ to form the conductive grid.
5. The method of manufacturing a novel conductive film according to claim 1, wherein in the step of preparing a metal layer with a smooth surface, the method of manufacturing the metal layer comprises:
providing a groove body, and flatly laying the conductive film into the groove body for fixing;
sensitizing the conductive grid;
providing chemical copper plating solution with the pH value of 10-12;
pouring the chemical copper plating solution into the tank body;
heating the chemical copper plating solution to 30-60 ℃, uniformly stirring, and then adding 37-42% of formaldehyde solution by mass;
and forming the metal layer on the surface of the conductive grid after standing.
6. The method for producing a novel conductive film according to claim 5, wherein in the sensitization treatment step: and (3) washing the conductive grid for 30s by using pure water, spraying a mixed solution of stannous chloride with the mass fraction of 1-5% and hydrochloric acid with the mass fraction of 4-8%, and cleaning by using the pure water after 3-5 min.
7. The method of claim 5, wherein the electroless copper plating solution comprises a main salt, a complexing agent, and a pH adjusting agent.
8. The method of claim 7, wherein the main salt is selected from one or more of copper sulfate, copper chloride and copper nitrate with a mass fraction of 1.2-2%; the complexing agent is selected from one or more of 1.0-1.8 mass percent of potassium sodium tartrate, sodium citrate, EDTA disodium and triethanolamine; the PH regulator is selected from one or more of sodium hydroxide or potassium hydroxide with the mass fraction of 1.2-2%.
9. The method for producing a novel conductive film according to claim 5, wherein in the step of leaving to stand: and standing for 10-120 min at 30-60 ℃ to enable copper atoms in the chemical copper plating solution to deposit on the surface of the conductive grid to form a copper layer.
10. The novel conductive film is characterized by comprising a transparent substrate, a structural layer, a conductive grid and a metal layer, wherein the structural layer is positioned on the transparent substrate and provided with a pattern groove, the conductive grid is embedded in the pattern groove, the metal layer covers the conductive grid, the conductive grid is abnormal, and the metal layer is filled in the abnormal part of the surface of the conductive grid.
11. The novel conductive film according to claim 10, wherein the conductive mesh is made of a silver paste or a silver alloy paste having a purity of 95%, the metal layer is made of copper, and the conductive mesh and the metal layer have the same conductivity.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3017987B1 (en) * | 1998-12-25 | 2000-03-13 | 住友ゴム工業株式会社 | Transparent electromagnetic wave shield member and method of manufacturing the same |
| JP2007324522A (en) * | 2006-06-05 | 2007-12-13 | Tokuyama Corp | Method of manufacturing metallized ceramic substrate |
| US20090214839A1 (en) * | 2006-08-31 | 2009-08-27 | Bridgestone Corporation | Process for preparing light transmissive electromagnetic wave shielding material, light transmissive electromagnetic wave shielding material and display filter |
| CN104407729A (en) * | 2014-10-14 | 2015-03-11 | 业成光电（深圳）有限公司 | Electronic device, touch screen, transparent conducting film and preparation method of transparent conducting film |
| CN110473655A (en) * | 2018-05-10 | 2019-11-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of transparent conductive film and preparation method thereof |
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2020
- 2020-01-07 CN CN202010015170.2A patent/CN113161039B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3017987B1 (en) * | 1998-12-25 | 2000-03-13 | 住友ゴム工業株式会社 | Transparent electromagnetic wave shield member and method of manufacturing the same |
| JP2007324522A (en) * | 2006-06-05 | 2007-12-13 | Tokuyama Corp | Method of manufacturing metallized ceramic substrate |
| US20090214839A1 (en) * | 2006-08-31 | 2009-08-27 | Bridgestone Corporation | Process for preparing light transmissive electromagnetic wave shielding material, light transmissive electromagnetic wave shielding material and display filter |
| CN104407729A (en) * | 2014-10-14 | 2015-03-11 | 业成光电（深圳）有限公司 | Electronic device, touch screen, transparent conducting film and preparation method of transparent conducting film |
| CN110473655A (en) * | 2018-05-10 | 2019-11-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of transparent conductive film and preparation method thereof |
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