CN113151787B - Evaporation device and evaporation source - Google Patents

Evaporation device and evaporation source Download PDF

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Publication number
CN113151787B
CN113151787B CN202110416162.3A CN202110416162A CN113151787B CN 113151787 B CN113151787 B CN 113151787B CN 202110416162 A CN202110416162 A CN 202110416162A CN 113151787 B CN113151787 B CN 113151787B
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evaporation
port portion
evaporation port
longitudinal direction
container
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CN113151787A (en
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田村博之
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Canon Tokki Corp
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Canon Tokki Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention provides a vapor deposition device and an evaporation source, which have large incident angles of evaporation particles, can realize uniform film thickness distribution and are not easily affected by evaporation rate variation. The vapor deposition device is provided with an evaporation source, wherein the evaporation source is provided with a container (1) for containing a film forming material and a plurality of evaporation ports (2 a, 2 b) arranged along the longitudinal direction of the container, wherein at least one pair of the outer evaporation ports (2 a) arranged outside the plurality of evaporation ports are respectively provided with an opening end face inclined towards the outer side of the longitudinal direction of the container, at least one outer evaporation port is set as an outer evaporation port (2 a) for adjusting film thickness distribution, the outer evaporation port (2 a) for adjusting film thickness distribution is configured in such a way that the normal line from the center of the opening end face points to the outer side of the film forming effective range of the substrate (3), and the maximum film forming point (X) for forming the film forming material which is discharged from the opening end face of the outer evaporation port (2 a) in the thickest way is positioned at the outer side of the film forming effective range of the substrate.

Description

Evaporation device and evaporation source
The present application is a divisional application with a filing date of 2017, month 07, day 05, a filing number of 201710539979.3, and a name of "vapor deposition apparatus and vapor source".
Technical Field
The present invention relates to a vapor deposition apparatus and an evaporation source.
Background
In japanese patent application No. 2014-265981 filed by the applicant of the present application, there is proposed a vacuum vapor deposition apparatus in which an opening end surface of an evaporation port located outside among a plurality of evaporation ports provided in an evaporation source is inclined so as to face the outside in the longitudinal direction of the evaporation source, whereby a vapor deposition film having a uniform film thickness distribution and suppressed film blurring in a pattern after film formation can be obtained without disposing the evaporation port so as to extend to the outside in the longitudinal direction.
Disclosure of Invention
The present invention has been made to achieve further improvement in uniformity of film thickness distribution, and an object of the present invention is to provide a vapor deposition apparatus and an evaporation source that have a large incident angle of vapor particles, can achieve uniform film thickness distribution, and are less susceptible to variations in evaporation rate.
The present invention provides a vapor deposition apparatus including an evaporation source having a container for containing a film forming material and a plurality of evaporation ports provided along a longitudinal direction of the container, wherein the vapor deposition apparatus forms a vapor deposition film on a substrate by discharging the film forming material from the evaporation ports, wherein at least one pair of outer evaporation ports provided outside the plurality of evaporation ports each have an opening end surface inclined so as to face outward in the longitudinal direction of the container, at least one of the outer evaporation ports is set as an outer evaporation port for film thickness distribution adjustment, the outer evaporation port for film thickness distribution adjustment is configured such that a normal line from a center of the opening end surface is directed to an outside of a film formation effective range of the substrate, and a maximum film formation point at which the film forming material discharged from the opening end surface of the outer evaporation port is formed to be thickest is located outside of the film formation effective range of the substrate.
[ Effect of the invention ]
The present invention is configured as described above, and therefore, it is possible to provide a vapor deposition apparatus and an evaporation source which have a large incident angle of vapor particles, can realize uniform film thickness distribution, and are not easily affected by variations in evaporation rate.
Drawings
Fig. 1 is a schematic explanatory front view of the present embodiment.
Fig. 2 is a schematic explanatory front view of another example.
Fig. 3 is an explanatory diagram of a main part of the present embodiment.
Fig. 4 is a schematic explanatory diagram of the cosine law.
Fig. 5 is an explanatory diagram illustrating a relationship between the n value and the maximum film formation point.
Fig. 6 is an explanatory diagram illustrating a relationship between the n value and the maximum film formation point.
Fig. 7 is a diagrammatic explanatory front view of an example of the vertical nozzle.
Fig. 8 is a schematic explanatory front view of an example of the inward-tilting nozzle.
Fig. 9 is a schematic explanatory front view of an example of the camber nozzle.
Fig. 10 is a schematic explanatory front view of the vapor deposition apparatus.
Fig. 11 is a schematic explanatory side view of the vapor deposition apparatus.
[ symbolic description ]
1 container
2a, 2b evaporation port
3 substrate
Detailed Description
The function of the present invention is shown based on the drawings, so that the embodiments of the present invention considered preferable are briefly described.
By forming the film thickness distribution range at a gentle inclined portion of the film thickness distribution shape formed by the discharge from the film thickness distribution adjusting outer evaporation port 2a by making the maximum film formation point X at which the film formation is performed by the film thickness distribution adjusting outer evaporation port 2a outside the film formation effective range, the influence of the positional deviation, angular deviation, and evaporation rate deviation of the outer evaporation port 2a can be reduced as much as possible, and when the evaporated film forming material is discharged from the evaporation ports 2a and 2b of the container 1 to form the vapor deposited film on the substrate, a uniform film thickness distribution is easily formed.
Further, since the normal line from the center of the opening end surface of the outside evaporation port 2a is directed to the outside of the film formation effective range of the substrate 3, the maximum incident angle to the substrate 3 increases, and film blurring in the pattern after film formation can be suppressed.
[ example ]
Specific embodiments of the present invention will be described based on the drawings.
The present embodiment is an example in which the present invention is applied to a vapor deposition apparatus such as those illustrated in fig. 10 and 11. The vapor deposition apparatus is provided with a film thickness monitor 22, a film thickness meter 23, and a heater power supply 24, wherein the film thickness monitor 22 monitors the evaporation rate of vapor particles emitted from the film thickness monitor 25, the film thickness meter 23 is provided outside the vacuum tank 20 and converts the monitored amount of vapor particles into a film thickness, and the heater power supply 24 heats the container 1 so as to control the evaporation rate of the film forming material such that the converted film thickness becomes a desired film thickness, in order to form a thin film on the substrate 3 in the vacuum tank 20 which maintains a reduced pressure atmosphere. Further, a relative movement mechanism for relatively moving the substrate 3 and the evaporation source 25 is provided, and film formation is performed while relatively moving the substrate, whereby a vapor deposition film having a uniform film thickness can be formed over the entire surface of the substrate.
The container 1 and the substrate 3 disposed at a position facing the container 1 are relatively moved in a direction orthogonal to the longitudinal direction of the container 1, and the film forming material is discharged from the evaporation port 2, whereby a vapor deposited film is formed on the substrate 3.
In the present embodiment, the evaporation source 25 is composed of the container 1 and the evaporation ports 2a and 2b, and the container 1 accommodates the film forming material, and the evaporation ports 2a and 2b are provided in the container 1 along the longitudinal direction of the container 1.
Specifically, as shown in fig. 1, at least one pair of the outer evaporation ports 2a provided outside among the plurality of evaporation ports 2a, 2b has an opening end surface inclined so as to face outward in the longitudinal direction of the container 1.
At least 1 of the outer evaporation ports 2a is set as a film thickness distribution adjusting outer evaporation port 2a, and the film thickness distribution adjusting outer evaporation port 2a is configured such that a normal line from a center of the opening end face is directed to an outside of a film formation effective range of the substrate 3, and a maximum film formation point X at which a film formation material discharged from the opening end face of the outer evaporation port 2a is formed to be thickest is located outside of the film formation effective range of the substrate 3.
Specifically, at least the pair of evaporation ports 2a located at the outermost side is defined as the outer evaporation port 2a. In the present embodiment, the innermost group is the inner evaporation port portion 2b, all evaporation port portions 2a other than the inner evaporation port portion 2b are the outer evaporation port portions 2a, and all evaporation port portions 2a and 2b have opening end surfaces inclined so as to face the outside in the longitudinal direction of the container 1.
The other evaporation ports 2a, 2b other than the outermost outside evaporation port 2a in the present embodiment are not limited to the above configuration, and may have an opening end surface inclined so as to be directed inward in the longitudinal direction, or may be vertically provided in the container 1. Further, only the inner evaporation port 2b may be formed to have an opening end surface inclined so as to be directed inward in the longitudinal direction, or may be formed to be vertically erected on the container 1.
In the present embodiment, the pair of outer evaporation ports 2a located at the outermost sides are set as the outer evaporation ports 2 for distribution adjustment.
As another example shown in fig. 2, not only the outermost outer evaporation port 2a but also the outer evaporation port 2a adjacent to the outermost outer evaporation port 2a may be the film thickness distribution adjusting outer evaporation port 2a.
The arrangement range W1 of the evaporation units 2a, 2b is set to a width smaller than the film formation effective range W2 of the substrate 3 in the longitudinal direction of the container 1 (see fig. 3).
The distance (inner offset distance) b from the end of the film formation effective range of the opening center of the film thickness distribution adjusting outer evaporation port portion 2a can be obtained by b=w2-w1++2. When the distance between the substrate and the evaporation port is T/S, the distance a between the normal line from the opening end surface of the evaporation port 2 and the opening center of the evaporation port 2 on the virtual plane including the film formation surface of the substrate 3 can be obtained by a=t/s×tan θ. Here, the position of the film thickness distribution adjusting outside evaporation port 2a and the inclination angle of the opening end face are set so that a > b.
Specifically, the evaporation angle distribution of the film forming material at the film thickness distribution adjusting outer evaporation port 2a satisfies the cosine law shown in the following formula (1).
cos n θ (where n is 3 to 20) … (1)
That is, as illustrated in fig. 4, the evaporation angle distribution (discharge angle distribution) of the evaporation particles discharged from the front end of the evaporation port portion follows the cosine law (cos) of 0 ° in the normal direction of the opening n θ). In this case, the directivity tends to be higher as the n value is larger, and the n value tends to be larger as the ratio H/D of the inner diameter (D) to the height (H) of the opening of the evaporation port is larger. The position of the maximum film formation point is adjusted by appropriately setting the value of n between 3 and 20.
The film thickness distribution adjusting outside evaporation port 2a is set so that the ratio of the inner diameter to the height is 1 or more: 2.
in the present embodiment, the maximum film formation point is the peak of the film thickness distribution, which is the point where the slope of the tangential line in the distribution shape after film formation of the substrate is 0 °.
For example, as shown in fig. 5, when T/S is 400mm and θ is 30 °, comparing the film thickness distribution when n values are 3, 5, 10, and 20, it is clear that the larger the n value, the closer the maximum film formation point is to the intersection of the virtual plane including the film formation surface of the substrate and the normal line, and the smaller the n value, the closer the maximum film formation point is to the position directly above the film thickness distribution adjusting outside evaporation port 2a. When the value of n is small, the distribution inclination is gentle, the sensitivity to film thickness distribution errors is reduced, and the influence of the positional deviation, angular deviation, and evaporation rate deviation of the film thickness distribution adjusting outside evaporation port section 2a is reduced.
As illustrated in fig. 6, when θ is 40 °, the maximum deposition point is shifted to the outside as compared with the case of 30 °. Further, the amount of the inner offset from the intersection point of the virtual plane including the film formation surface of the substrate and the normal line is larger than that in the case of 30 °.
Further, when T/S is 300mm, the amount of the inner bias from the intersection point of the virtual plane including the film formation surface of the substrate and the normal line tends to be smaller than that of 400mm, and the tendency becomes more remarkable as the value of n becomes smaller. Further, the maximum film formation point in the case of 400mm is shifted to the outside.
The positions of the maximum deposition points X are set by adjusting the values of T/S, θ, n according to the above tendency.
In the present embodiment, the outermost outside evaporation port 2a is formed to have an opening end surface inclined so as to be directed outward in the longitudinal direction of the container 1, and the outside evaporation port 2a is set as the outside evaporation port 2a for adjusting film thickness, but when the outermost evaporation port is an evaporation port (vertical nozzle) vertically provided in the container 1 or an evaporation port (inward-inclined nozzle) having an opening end surface inclined so as to be directed inward in the longitudinal direction of the container 1, there are the following problems. In fig. 7 to 9, the same reference numerals as those given to the portions corresponding to the present embodiment are given to the same reference numerals as the reference numerals.
That is, although the outside evaporation port for adjusting the film thickness distribution can be set as in the present embodiment as illustrated in fig. 7 and 8 for both the vertical nozzle and the inward tilting nozzle, there is a problem in that the maximum incident angle α connecting the evaporation port 2a' located at the outermost side and the end of the film formation effective range becomes smaller (the maximum incident angle becomes smaller and causes the pattern blur amount to increase).
As shown in fig. 9, when the outermost outside evaporation port 2a ' is formed to have an opening end face inclined so as to face the outside in the longitudinal direction of the container 1' (camber nozzle) and the maximum deposition point X ' is located inside the effective deposition range, the maximum incident angle α can be increased, but it is difficult to ensure uniformity of film thickness distribution in the effective deposition range, and it is easily affected by variation in evaporation rate, and the like, as in the present embodiment, which is disadvantageous.
Therefore, it is considered that the outermost outer evaporation port 2a is required to have an opening end surface inclined so as to face the outer side in the longitudinal direction of the container 1, and the outer evaporation port 2a is required to be set as the film thickness distribution adjusting outer evaporation port 2a.
The present invention is not limited to the embodiment, and the specific configuration of each constituent element may be appropriately designed.

Claims (8)

1. A vapor deposition apparatus includes a container for containing a film forming material and a plurality of vapor deposition ports provided along a longitudinal direction of the container,
the vapor deposition device forms a vapor deposition film on a surface of the substrate including a film formation effective range by discharging the film forming material from the plurality of vapor deposition ports while relatively moving the container and the plurality of vapor deposition ports with respect to the substrate in a crossing direction crossing the longitudinal direction,
the vapor deposition apparatus is characterized in that,
the plurality of evaporation ports are provided so as to be included in the film formation effective range in the long-side direction,
a first evaporation port portion of the plurality of evaporation port portions, which is arranged between a center of the container in the longitudinal direction and one end of the container in the longitudinal direction, is inclined toward the one end,
the opening end face of the first evaporation port portion is inclined so as to be lower than the one end side of the center side,
the first evaporation port portion includes an evaporation port portion provided at a position closest to the one end in the longitudinal direction,
a normal line from the center of the opening end face of the first evaporation port portion is directed to the outside of the film formation effective range in the long-side direction,
the maximum film formation point at which the film formation material discharged from the first evaporation port portion forms a film thickest on the surface is located outside the film formation effective range in the longitudinal direction, and is located closer to the film formation effective range than an intersection point of the surface and the normal line.
2. The vapor deposition apparatus according to claim 1, wherein,
the first evaporation port portion includes an evaporation port portion adjacent to an evaporation port portion provided at a position closest to the one end in the longitudinal direction.
3. The vapor deposition device according to claim 1 or 2, wherein,
the evaporation angle distribution of the film forming material at the first evaporation port portion satisfies the following formula (1),
cos n θ···(1)，
wherein n is 3-20.
4. The vapor deposition apparatus according to claim 3, wherein,
the ratio of the inner diameter to the height of the first evaporation port portion is set to 1:2 or more.
5. An evaporation source comprising a container for containing a film-forming material and a plurality of evaporation ports provided along the longitudinal direction of the container,
the evaporation source forms a vapor deposition film on a surface of the substrate including a film deposition effective range by discharging the film deposition material from the plurality of evaporation ports while relatively moving the container and the plurality of evaporation ports with respect to the substrate in a crossing direction crossing the longitudinal direction,
the evaporation source is characterized in that,
the plurality of evaporation ports are provided so as to be included in the film formation effective range in the long-side direction,
a first evaporation port portion of the plurality of evaporation port portions, which is arranged between a center of the container in the longitudinal direction and one end of the container in the longitudinal direction, is inclined toward the one end,
the opening end face of the first evaporation port portion is inclined so as to be lower than the one end side of the center side,
the first evaporation port portion includes an evaporation port portion provided at a position closest to the one end in the longitudinal direction,
a normal line from the center of the opening end face of the first evaporation port portion is directed to the outside of the film formation effective range in the long-side direction,
the maximum film formation point at which the film formation material discharged from the first evaporation port portion forms a film thickest on the surface is located outside the film formation effective range in the longitudinal direction, and is located closer to the film formation effective range than an intersection point of the surface and the normal line.
6. The evaporation source according to claim 5, wherein,
the first evaporation port portion includes an evaporation port portion adjacent to an evaporation port portion provided at a position closest to the one end in the longitudinal direction.
7. The evaporation source according to claim 5 or 6, wherein,
the evaporation angle distribution of the film forming material at the first evaporation port portion satisfies the following formula (1),
cos n θ···(1)，
wherein n is 3-20.
8. The evaporation source according to claim 7, wherein,
the ratio of the inner diameter to the height of the first evaporation port portion is set to 1:2 or more.
CN202110416162.3A 2016-07-05 2017-07-05 Evaporation device and evaporation source Active CN113151787B (en)

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JP2016133684A JP6765237B2 (en) 2016-07-05 2016-07-05 Evaporation equipment and evaporation source
JP2016-133684 2016-07-05
CN202110416162.3A CN113151787B (en) 2016-07-05 2017-07-05 Evaporation device and evaporation source
CN201710539979.3A CN107574412B (en) 2016-07-05 2017-07-05 Evaporation device and evaporation source

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JPS5832234A (en) * 1981-08-20 1983-02-25 Matsushita Electric Ind Co Ltd Production of magnetic recording medium
JP2002105621A (en) * 2000-09-27 2002-04-10 Tokyo Process Service Kk Metal plate, its manufacturing method and aligner
CN1676660A (en) * 2004-03-30 2005-10-05 株式会社延原表 Nozzle evaporating source for steam plating
CN101445908A (en) * 2004-11-26 2009-06-03 三星移动显示器株式会社 Evaporation source and vapor deposition apparatus provided with it
CN101962750A (en) * 2009-07-24 2011-02-02 株式会社日立高新技术 Vacuum deposition method and device thereof
CN103430624A (en) * 2011-03-03 2013-12-04 东京毅力科创株式会社 Vapor-deposition device, vapor-deposition method, organic EL display, and lighting device
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CN113151787A (en) 2021-07-23
JP6765237B2 (en) 2020-10-07
JP2018003121A (en) 2018-01-11
KR20180005132A (en) 2018-01-15
CN107574412A (en) 2018-01-12

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