CN113140677A - Photoelectric device and preparation method thereof - Google Patents

Photoelectric device and preparation method thereof Download PDF

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CN113140677A
CN113140677A CN202010062641.5A CN202010062641A CN113140677A CN 113140677 A CN113140677 A CN 113140677A CN 202010062641 A CN202010062641 A CN 202010062641A CN 113140677 A CN113140677 A CN 113140677A
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layer
perovskite
optoelectronic device
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柯友
郭蔷
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Najing Technology Corp Ltd
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Abstract

The invention discloses a photoelectric device and a preparation method thereof, wherein the photoelectric device comprises an anode layer, a cathode layer and a functional layer, the functional layer is arranged between the anode layer and the cathode layer, the functional layer comprises a hole transport layer, an interface layer and a perovskite layer, the interface layer is arranged between the hole transport layer and the perovskite layer, the interface layer is made of a zwitterionic polymer, and the zwitterionic polymer is provided with a positive charge group and a negative charge group. Therefore, the interface defect is filled by adding the interface layer between the hole transport layer and the perovskite layer, the fluorescence quenching phenomenon of the hole transport layer is relieved, and the fluorescence quantum efficiency of the perovskite layer is improved.

Description

Photoelectric device and preparation method thereof
Technical Field
The invention relates to the technical field of photoelectric devices, in particular to a photoelectric device suitable for a perovskite layer and a preparation method thereof.
Background
In recent years, organic-inorganic hybrid perovskites have the advantages of simple preparation process, easily-adjusted luminescent color, high color purity, high photoelectric efficiency and the like, and show great application potential in the photoelectric field. However, the perovskite has low exciton binding energy, the radiative recombination of the perovskite thin film is low due to the thermal dissociation of the exciton at room temperature, and the generated free carrier can be captured by a defect state to cause non-radiative recombination. At present, the fluorescent quantum efficiency (PLQY) of perovskite can be improved by reducing the grain size of perovskite, using quasi-two-dimensional perovskite structure or defect passivation and the like, and high-efficiency green perovskite light emitting devices (PeLEDs) are obtained. But efficient green PeLEDs all use PEDOT: PSS as hole transport layer, PEDOT: PSS not only has the problem of fluorescence quenching, but also has the problems of interface defects and the like between a hole transport layer and a perovskite layer so as to limit the fluorescence quantum efficiency of the perovskite thin film, and further causes the low efficiency of perovskite photoelectric devices.
Disclosure of Invention
The invention aims to provide a photoelectric device and a preparation method thereof, which fill up the interface defect by adding an interface layer between a hole transport layer and a perovskite layer, relieve the fluorescence quenching phenomenon of the hole transport layer and improve the fluorescence quantum efficiency of the perovskite layer.
In order to achieve the above object, the present invention provides a photovoltaic device, including an anode layer, a cathode layer, and a functional layer, the functional layer is disposed between the anode layer and the cathode layer, the functional layer includes a hole transport layer, an interface layer, and a perovskite layer, the interface layer is disposed between the hole transport layer and the perovskite layer, the interface layer is made of a zwitterionic polymer, and the zwitterionic polymer has a positive charge group and a negative charge group.
As a preference, the positively charged group is a cationic group which the positively charged group is N, C, S or P containing.
As a preference, the negatively charged group is phosphate, phosphite, carboxylate, sulfonate, sulfate, or sulfonamide.
Further preferably, the chemical structure of the zwitterionic polymer is as shown in any one of formulas (1) to (3):
Figure BDA0002374978620000021
wherein x is 0-10, n is 10-1000, R⊕Are positively charged groups in the zwitterionic polymer,
Figure BDA0002374978620000022
are negatively charged groups in the zwitterionic polymer.
Preferably, the interface layer has a thickness of 1 to 10 nm.
As one preferable, the hole transport layer is PEDOT: and (4) a PSS layer.
Preferably, the general structural formula of the material in the perovskite layer is ABX3Wherein A is a metal cation or an alkylammonium salt, and A is Cs+，K+，Rb+，R1NH3 +Or NH2R2NH2 +，R1CnH2n +1, n is more than or equal to 1, R2CnHn, n is more than or equal to 1; x is a halogen anion, X is selected from Cl-、Br-Or I-At least one of; b is a divalent metal ion, B is selected from Cu2+、Ni2+、Co2+、Fe2+、Mn2 +、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Pb2+、Eu2+、Bi2+、Sb2+、Yb2+At least one of (a).
Preferably, the functional layer further comprises an electron transport layer and an electron injection layer, the electron transport layer is arranged between the perovskite layer and the electron injection layer, the electron injection layer is arranged between the electron transport layer and the cathode layer, the thickness of the electron injection layer is 1-10 nm, and the photoelectric device is an electroluminescent device.
As another preferable mode, the functional layer further includes an electron transport layer, the electron transport layer is disposed between the perovskite layer and the cathode layer, and the photoelectric device is a solar cell.
According to another aspect of the present application, there is provided a method of manufacturing an optoelectronic device, comprising the steps of:
s1 providing a substrate having a first electrode layer, the first electrode layer being either the anode layer or the cathode layer;
s2 providing the hole transport layer material, the interface layer material, and the perovskite layer material in this order from bottom to top on the first electrode layer;
s3 providing a material of a second electrode layer on the perovskite layer.
As a preferable example, the first electrode layer is an anode layer, and the step S2 further includes the steps of:
s21, setting a PEDOT (PSS solution) on the surface of the anode layer to form the hole transport layer;
s22, disposing a zwitterionic polymer solution on the surface of the hole transport layer to form the interface layer;
s23 disposing a perovskite solution on a surface of the interfacial layer to form the perovskite layer.
As one preferable, the step S2 includes the steps of:
s210, arranging a PEDOT (PSS) solution on an ITO substrate, and annealing at 130-170 ℃ for 20-40 min to form the hole transport layer;
s220, dissolving the zwitterionic polymer in trifluoroethanol to prepare a standby solution, arranging the standby solution on the surface of the hole transport layer, and annealing at the temperature of 80-120 ℃ for 2-10 min to form the interface layer;
s230, arranging a perovskite solution on the surface of the interface layer in a nitrogen environment, and annealing at 60-100 ℃ for 5-15 min to form the perovskite layer.
Preferably, in step S22, the zwitterionic polymer is dissolved in trifluoroethanol to prepare a solution with a mass concentration of 0.1-0.4 mg/mL.
Compared with the prior art, the invention has the beneficial effects that:
(1) the amphoteric ion polymer is used as an interface layer between the hole transport layer and the perovskite layer, and a monomer of the amphoteric ion polymer contains a positive charge group and a negative charge group, so that the interface defect of organic cations and halogen anions between the hole transport layer and the perovskite layer is effectively filled, the fluorescence quenching phenomenon of the hole transport layer is relieved, and the fluorescence quantum efficiency of the perovskite film is improved;
(2) the pH value of the zwitterionic polymer in the interface layer is neutral, the zwitterionic polymer can be prepared by a low-temperature solution method, the preparation method is simple, the annealing temperature is low and generally does not exceed 120 ℃, the application range of the interface layer is further enlarged, and the zwitterionic polymer can be applied to preparation of large-area flexible perovskite light-emitting devices or perovskite solar cells.
(3) The surface hydrophilicity of the zwitterionic polymer in the interface layer is compatible with the perovskite precursor solution, so that the film forming property of the perovskite is effectively improved, and the preparation of a uniform and compact perovskite film is facilitated;
(4) compared with polyelectrolyte, the interface layer is made of charge-neutral zwitterionic polymer, so that the interface layer is more stable under an electric field and cannot cause attenuation of a perovskite device due to ion migration.
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FIG. 1 is a schematic diagram of a photovoltaic device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a photovoltaic device in accordance with a preferred embodiment of the present invention;
fig. 3 is a schematic view of a photovoltaic device according to another preferred embodiment of the present invention;
FIG. 4 is a graph of fluorescence spectra and PLQY data for perovskite thin films according to examples 1-5 of the present invention;
FIG. 5 is a graph of voltage-current density dependence of a photovoltaic device according to embodiments 1 to 3 of the present invention;
FIG. 6 is a current density-external quantum efficiency relationship curve for a photovoltaic device according to embodiments 1-3 of the present invention;
FIG. 7 is an electroluminescence spectrum of a photoelectric device according to embodiments 1 to 3 in the present invention;
FIG. 8 is a graph of voltage-current density dependence for photovoltaic devices based on different concentrations of zwitterionic polymers in accordance with the above-described preferred embodiment of the present invention;
fig. 9 is a graph of current density versus external quantum efficiency for photovoltaic devices based on different concentrations of zwitterionic polymers in accordance with the above-described preferred embodiments of the present invention.
In the figure: 1. an anode layer; 2. a hole transport layer; 3. an interfacial layer; 4. a perovskite layer; 5. an electron transport layer; 6. an electron injection layer; 7. a cathode layer.
Detailed Description
The present invention is further described below with reference to specific embodiments, and it should be noted that, without conflict, any combination between the embodiments or technical features described below may form a new embodiment.
In the description of the present invention, it is noted that the terms "comprises" and "comprising," and any variations thereof, in the description and claims of this application, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As shown in fig. 1, the photoelectric device includes an anode layer 1, a cathode layer 7, and a functional layer, the functional layer is disposed between the anode layer 1 and the cathode layer 7, the functional layer includes a hole transport layer 2, an interface layer 3, and a perovskite layer 4, the interface layer 3 is disposed between the hole transport layer 2 and the perovskite layer 4, the interface layer 3 is made of a zwitterionic polymer, and the zwitterionic polymer has a positive charge group and a negative charge group.
In some embodiments, the positively charged groups in the interface layer 3 are N, C, S or P containing cationic groups. Wherein, N isThe atom, C atom, S atom, P atom, are positively charged, thereby forming a cationic group. The cationic group containing N such as quaternary amine, quaternary pyridine amine or quaternary pyrrole amine has positive charge, and the negative charge group in the interface layer 3 is phosphate radical, phosphite radical, carboxylate radical, sulfonate radical, sulfate radical or sulfonamide radical having negative charge. Thus, N contained in the monomer of the zwitterionic polymer+And O-The method is beneficial to filling the defects of organic cations and halogen anions respectively, and improving the fluorescence quantum efficiency of the perovskite thin film, thereby improving the External Quantum Efficiency (EQE) of perovskite light-emitting devices (PelLEDs).
In some embodiments, the chemical structure of the zwitterionic polymer is as shown in any one of formulas (1) - (3):
Figure BDA0002374978620000051
in some embodiments, x is 0-10, n is 10-1000, and R is⊕Are positively charged groups in the zwitterionic polymer,
Figure BDA0002374978620000052
are negatively charged groups in the zwitterionic polymer.
In some embodiments, the anode layer 1 is a transparent conductive substrate, i.e., Indium Tin Oxide (ITO) conductive glass, and the sheet resistance of the ITO film is 15 Ω/□, and the film thickness is 20-200 nm. Wherein, a hole transport layer 2, an interface layer 3, a perovskite layer 4 and a cathode layer 7 are arranged in sequence from the anode layer 1 to the top.
In some embodiments, the thickness of the interfacial layer may be 1 to 10 nm.
In some embodiments, the hole transport layer 2 is a layer of poly 3, 4-ethylenedioxythiophene/polystyrene sulfonate (PEDOT: PSS).
In some embodiments, the film thickness of the hole transport layer 2 is 20 to 80 nm.
In some embodiments, the perovskite layer 4 is a luminescent layer, and the general structural formula of the material in the perovskite layer 4 is ABX3Wherein A is a metal cation or an alkyl groupAmmonium salt, A is Cs+，K+，Rb+，R1NH3 +Or NH2R2NH2 +，R1CnH2n +1, n is more than or equal to 1, R2CnHn, n is more than or equal to 1; x is a halogen anion, X is selected from Cl-、Br-Or I-At least one of; b is a divalent metal ion, B is selected from Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Pb2+、Eu2+、Bi2+、Sb2+、Yb2+At least one of (a). Wherein the material precursor solution of the perovskite layer 4 consists of AX and BX2Dissolving in solvent ((N, N-Dimethylformamide (DMF), dimethyl sulfoxide (DMSO), gamma-butyrolactone (GBL) or mixed solvent prepared according to a certain proportion) at a certain concentration.
In some embodiments, the material of the electron transport layer 5 includes, but is not limited to, 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene (TPBi), 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline (BCP), 4, 7-diphenyl-1, 10-phenanthroline (Bphen), 1,3, 5-tris [ (3-pyridyl) -3-phenyl ] benzene (TmPyPb), 4, 6-bis (3, 5-bis (3-pyridyl) ylphenyl) -2-methylpyrimidine (B3PyMPM), 2,4, 6; tris [2,4, 6-trimethyl-3- (3-pyridyl) phenyl ] borane (3TPYMB), 1, 3-bis (3, 5-bipyridin-3-ylphenyl) benzene (BmPyPhB), 8-hydroxyquinoline aluminum (AlQ3), 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-Triazole (TAZ), and the film thickness may be 10 to 100 nm.
In some embodiments, the functional layer may further include an electron transport layer 5 and an electron injection layer 6, the electron transport layer 5 is disposed between the perovskite layer 4 and the electron injection layer 6, the electron injection layer 6 is disposed between the electron transport layer 5 and the cathode layer 7, the thickness of the electron injection layer is 1 to 10nm, and the optoelectronic device is an electroluminescent device, as shown in fig. 2.
In some embodiments, the electron injection layer 6 is lithium fluoride (LiF).
In some embodiments, the thickness of the electron injection layer 6 may be 1 to 10 nm.
In some embodiments, the perovskite layer 4 may have a film thickness of 10 to 200 nm.
In some embodiments, the cathode layer 7 is aluminum (Al) or silver (Ag), and the thickness thereof may be 100 to 150 nm.
In some embodiments, the material of anode layer 1 may be Indium Tin Oxide (ITO); the thickness of the anode layer 1 may be 20 to 200 nm.
In some embodiments, the anode layer 1 has a film thickness of 100 to 200nm, the hole transport layer 2 has a film thickness of 20 to 50nm, the interface layer 3 has a film thickness of 2 to 5nm, the perovskite layer 4 has a film thickness of 50 to 100nm, the electron transport layer 5 has a film thickness of 20 to 60nm, and the electron injection layer 6 has a film thickness of 5 to 10 nm.
Fig. 3 shows another photovoltaic device suitable for a perovskite solar cell, which includes an anode layer 1, a cathode layer 7, and a functional layer disposed between the anode layer 1 and the cathode layer 7, the functional layer includes a hole transport layer 2, an interface layer 3, a perovskite layer 4, and an electron transport layer 5, the interface layer 3 is disposed between the hole transport layer 2 and the perovskite layer 4, and the interface layer 3 has a positive charge group and a negative charge group.
The interface layer 3 is thus suitable for use in applications containing a perovskite layer 4, such as in the fields of light emitting diodes, solar cells, sensors and probes.
According to another aspect of the present application, there is provided a method of manufacturing an optoelectronic device according to any one of the above, comprising the steps of: s1 providing a substrate having a first electrode layer, the first electrode layer being either an anode layer 1 or a cathode layer 7; s2 providing the material of the hole transport layer 2, the material of the interface layer 3, and the material of the perovskite layer 4 in this order from bottom to top on the first electrode layer; s3 provides the material of the second electrode layer on the perovskite layer 4.
In some embodiments, the first electrode layer is anode layer 1, and step S2 further includes the steps of: s21, setting a PEDOT (PSS solution) on the surface of the anode layer 1 to form a hole transport layer 2; s22 disposing the zwitterionic polymer solution on the surface of the hole transport layer 2 to form an interface layer 3; s23 the perovskite solution is deposited on the surface of the interface layer 3 to form the perovskite layer 4. It should be noted that the process of forming the layer in each step requires drying to remove the solvent, and the drying method includes, but is not limited to, heat drying and vacuum drying. Methods for disposing the respective layers include, but are not limited to, spin coating, doctor blading, coating, inkjet printing, screen printing, and the like.
In some embodiments, step S2 specifically includes the steps of: s210, arranging a PEDOT (PSS) solution on an ITO substrate, and annealing at 130-170 ℃ for 20-40 min to form a hole transport layer 2; s220, dissolving a zwitterionic polymer in trifluoroethanol to prepare a standby solution, arranging the standby solution on the surface of the hole transport layer 2, and annealing at 80-120 ℃ for 2-10 min to form an interface layer 3; s230, the perovskite solution is arranged on the surface of the interface layer 3 in a nitrogen environment, and annealing is carried out for 5-15 min at the temperature of 60-100 ℃ to form a perovskite layer 4. The perovskite solution may be disposed by a one-step spin coating method, an anti-solvent method, or a two-step spin coating method in step S230.
In some embodiments, the method of manufacturing an optoelectronic device further comprises, before step S3, step S2': preparing an electron transport layer 5 on the perovskite layer 4 by a vacuum evaporation method; the electron injection layer 6 was prepared on the electron transport layer 5 by a vacuum evaporation method.
Example 1
A photovoltaic device, suitable for use in a light emitting diode, comprising the steps of:
(a) carrying out ultrasonic cleaning on the transparent conductive substrate ITO glass twice by using acetone and ethanol solutions respectively, drying the transparent conductive substrate ITO glass by using nitrogen after treatment, transferring the ITO glass into an oxygen plasma cleaning machine, and carrying out oxygen plasma cleaning on the ITO glass under a vacuum condition;
(b) PEDOT for preparing the hole transport layer 2 by spin coating: a PSS layer, which is thermally annealed at 150 ℃;
(c) dissolving a zwitterionic polymer P1 in Trifluoroethanol (TFE) according to a mass concentration of 0.2mg/mL to prepare a solution, then spin-coating a sulfonated zwitterionic polymer P1 solution on the hole transport layer 2, and annealing at 100 ℃ for 5min to form an interface layer 3, wherein the zwitterionic polymer P1 has a chemical structural formula as follows:
Figure BDA0002374978620000081
(d) reacting NH2CH＝NH2Br (FABr) and PbBr2Dissolving 21% of the mixture in DMF according to the molar ratio of 2:1 to prepare precursor solution (FAPBBr)3) Preparing a perovskite film on the surface of the interface layer 3 by utilizing a one-step spin coating method, an anti-solvent method or a two-step spin coating method, and annealing for 10min at the temperature of 70 ℃ to form a perovskite layer 4, namely a light-emitting layer;
(e) preparing an electron transport layer 5(TPBi layer) on the perovskite layer 4 by a vacuum evaporation method;
(f) an electron injection layer 6(LiF layer) and a cathode layer 7(Al layer) were prepared on the electron transport layer 5 by a vacuum evaporation method.
The one-step spin coating method mentioned in this embodiment refers to a method of directly performing spin coating on a substrate by dropping a precursor solution on the substrate; the antisolvent method is characterized in that antisolvents such as chlorobenzene, toluene and the like are dropped into a precursor solution in the spin coating process on a substrate; the two-step spin coating method is to mix FABr and PbBr2Dissolving in two solvents respectively, and spin-coating on the substrate.
The anode layer 1 had a film thickness of 150nm, the hole transport layer 2 had a film thickness of 40nm, the interface layer 3 had a film thickness of 2nm, the perovskite layer 4 had a film thickness of 50nm, the electron transport layer 5 had a film thickness of 50nm, the electron injection layer 6 had a film thickness of 5nm, and the cathode layer 7 had a film thickness of 100 nm.
The FAPBR is prepared by the preparation method of the photoelectric device3(w/o represents the perovskite layer 4 without the interface layer 3 modification) and a zwitterionic polymer P1 interface modified (w/P1 represents the perovskite layer modified by the interface layer of the P1 material, and the like below) PeLED device, the optoelectronic device is packaged, and the performance of the device is tested outside a glove box.
As shown in fig. 4, the PLQY of the perovskite layer 4 was increased from 37% to 65% after the interface modification with the zwitterionic polymer P1, which proves that the interface layer 3 with the zwitterionic polymer P1 has a passivation effect on the bottom surface of the perovskite layer 4; as shown in fig. 5-6, the current density of the PeLED device after interface modification by the zwitterionic polymer P1 did not change significantly, and the external quantum efficiency of the PeLED device at low current density was significantly improved (the highest EQE reached 11.34%). In addition, as shown in FIG. 7, the electroluminescence spectra of the devices before and after modification were substantially uniform (the peak of luminescence was 534 nm).
Example 2
The photoelectric device in this example is prepared by the same method as in example 1, except that the zwitterionic polymer P2 is used as the material of the interface layer 3 to perform interface modification between the hole transport layer 2 and the perovskite layer 4, and the chemical structural formula of the zwitterionic polymer P2 is as follows:
Figure BDA0002374978620000101
as shown in fig. 4, the PLQY of the perovskite layer 4 was improved from 37% to 60% after the interface modification by the zwitterionic polymer P2, which proves that the interface layer 3 of the zwitterionic polymer P2 has passivation effect on the bottom surface of the perovskite layer 4; as shown in fig. 5-6, the current density of the PeLED device after interface modification by the zwitterionic polymer P2 did not change significantly, and the external quantum efficiency of the PeLED device at low current density was significantly improved (the highest EQE reached 10.48%). In addition, as shown in FIG. 7, the electroluminescence spectra of the devices before and after modification were substantially uniform (the peak of luminescence was 534 nm).
Example 3
The photoelectric device in this example is prepared in the same manner as in example 1, except that the interface modification between the hole transport layer 2 and the perovskite layer 4 is performed by using the zwitterionic polymer P3 as a material of the interface layer 3, and the chemical structural formula of the zwitterionic polymer P3 is as follows:
Figure BDA0002374978620000102
as shown in fig. 4, the PLQY of the perovskite layer 4 was increased from 37% to 62% after the interface modification with the zwitterionic polymer P3, which proves that the interface layer 3 with the zwitterionic polymer P3 has a passivation effect on the bottom surface of the perovskite layer 4; as shown in fig. 5-6, the current density of the PeLED device after interface modification by the zwitterionic polymer P3 is not significantly changed, and the external quantum efficiency of the PeLED device at low current density is significantly improved (the highest EQE reaches 10.97%). In addition, as shown in FIG. 7, the electroluminescence spectra of the devices before and after modification were substantially uniform (the peak of luminescence was 534 nm).
Example 4
The photoelectric device in this example is prepared in the same manner as in example 1, except that the interface modification between the hole transport layer 2 and the perovskite layer 4 is performed by using the zwitterionic polymer P4 as a material of the interface layer 3, and the chemical structural formula of the zwitterionic polymer P4 is as follows:
Figure BDA0002374978620000111
as shown in fig. 4, after the interface modification of the zwitterionic polymer P4, the PLQY of the perovskite layer 4 was improved from 37% to 58%, which proves that the interface layer 3 of the zwitterionic polymer P4 has a passivation effect on the bottom surface of the perovskite layer; as shown in fig. 5-6, the current density of the PeLED device after interface modification by the zwitterionic polymer P4 did not change significantly, and the external quantum efficiency of the PeLED device at low current density was significantly improved (the highest EQE reached 10.53%). In addition, as shown in FIG. 7, the electroluminescence spectra of the devices before and after modification were substantially uniform (the peak of luminescence was 534 nm).
Example 5
The photoelectric device in this example is prepared in the same manner as in example 1, except that the interface modification between the hole transport layer 2 and the perovskite layer 4 is performed using the zwitterionic polymer P5 as the interface layer 3, and the chemical structural formula of the zwitterionic polymer P5 is:
Figure BDA0002374978620000112
as shown in fig. 4, after the interface modification by the zwitterionic polymer P5, the PLQY of the perovskite layer 4 was improved from 37% to 53%, which proves that the interface layer 3 of the zwitterionic polymer P5 has passivation effect on the bottom surface of the perovskite layer; as shown in fig. 5-6, the current density of the PeLED device after interface modification by the zwitterionic polymer P5 did not change significantly, and the external quantum efficiency of the PeLED device at low current density was significantly improved (the highest EQE reached 9.86%). In addition, as shown in FIG. 6, the electroluminescence spectra of the devices before and after modification were substantially uniform (peak luminescence 534 nm).
Examples 6 to 11
The preparation method of the photoelectric device in the embodiment is the same as that in embodiment 1, except that the zwitterionic polymer P1 is dissolved in trifluoroethanol to prepare a solution with the mass concentration of 0-1 mg/mL, and the concentrations in embodiments 6-11 are 0, 0.1mg/mL, 0.2mg/mL, 0.3mg/mL, 0.6mg/mL and 1mg/mL respectively. And the photoelectric devices prepared in examples 6 to 11 were packaged and device performance was tested outside the glove box. The test results are shown in fig. 8-9, with the continuous increase of the concentration of P1, the current density of the PeLED device is reduced, the highest EQE of the device is increased first and then reduced, and the optimal concentration of P1 is determined to be 0.2mg/mL by comparison test results.
The foregoing has described the general principles, principal features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are merely illustrative of the principles of the invention, but that various changes and modifications may be made without departing from the spirit and scope of the invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (13)

1. An optoelectronic device comprising an anode layer, a cathode layer, and a functional layer disposed between the anode layer and the cathode layer, wherein the functional layer comprises a hole transport layer, an interface layer, and a perovskite layer, the interface layer is disposed between the hole transport layer and the perovskite layer, the interface layer is made of a zwitterionic polymer, and the zwitterionic polymer has a positive charge group and a negative charge group.
2. The optoelectronic device according to claim 1, wherein the positively charged group is a cationic group comprising N, C, S or P.
3. The optoelectronic device according to claim 2, wherein the negatively charged group is phosphate, phosphite, carboxylate, sulfonate, sulfate, or sulfonamide.
4. The optoelectronic device according to claim 3, wherein the chemical structure of the zwitterionic polymer is as shown in any one of formulas (1) to (3):
Figure FDA0002374978610000011
wherein x is 0-10, n is 10-1000, R⊕Are positively charged groups in the zwitterionic polymer,
Figure FDA0002374978610000012
are negatively charged groups in the zwitterionic polymer.
5. The optoelectronic device according to any one of claims 1 to 4, wherein the interface layer has a film thickness of 1 to 10 nm.
6. The optoelectronic device according to any one of claims 1 to 4, wherein the hole transport layer is PEDOT: and (4) a PSS layer.
7. The optoelectronic device according to any one of claims 1 to 4, wherein the general structural formula of the material in the perovskite layer is ABX3Wherein A is a metal cation or an alkylammonium salt, and A is Cs+，K+，Rb+，R1NH3 +Or NH2R2NH2 +，R1CnH2n +1, n is more than or equal to 1, R2CnHn, n is more than or equal to 1; x is a halogen anion, X is selected from Cl-、Br-Or I-At least one of; b is a divalent metal ion, B is selected from Cu2+、Ni2+、Co2+、Fe2+、Mn2+、Cr2+、Pd2+、Cd2+、Ge2+、Sn2+、Pb2+、Eu2+、Bi2+、Sb2+、Yb2 +At least one of (a).
8. The optoelectronic device according to any one of claims 1 to 4, wherein the functional layer further comprises an electron transport layer and an electron injection layer, the electron transport layer is disposed between the perovskite layer and the electron injection layer, the electron injection layer is disposed between the electron transport layer and the cathode layer, the thickness of the electron injection layer is 1 to 10nm, and the optoelectronic device is an electroluminescent device.
9. The optoelectronic device according to any one of claims 1 to 4, wherein the functional layer further comprises an electron transport layer disposed between the perovskite layer and the cathode layer, and the optoelectronic device is a solar cell.
10. A method of manufacturing an optoelectronic device according to any one of claims 1 to 9, comprising the steps of:
s1 providing a substrate having a first electrode layer, the first electrode layer being either the anode layer or the cathode layer;
s2 providing the hole transport layer material, the interface layer material, and the perovskite layer material in this order from bottom to top on the first electrode layer;
s3 providing a material of a second electrode layer on the perovskite layer.
11. The method for manufacturing an optoelectronic device according to claim 10, wherein the first electrode layer is an anode layer, and the step S2 further comprises the steps of:
s21, setting a PEDOT (PSS solution) on the surface of the anode layer to form the hole transport layer;
s22, disposing a zwitterionic polymer solution on the surface of the hole transport layer to form the interface layer;
s23 disposing a perovskite solution on a surface of the interfacial layer to form the perovskite layer.
12. The method for manufacturing an optoelectronic device according to claim 11, wherein the step S2 comprises the steps of:
s210, arranging a PEDOT (PSS) solution on an ITO substrate, and annealing at 130-170 ℃ for 20-40 min to form the hole transport layer;
s220, dissolving the zwitterionic polymer in trifluoroethanol to prepare a standby solution, arranging the standby solution on the surface of the hole transport layer, and annealing at the temperature of 80-120 ℃ for 2-10 min to form the interface layer;
s230, arranging a perovskite solution on the surface of the interface layer in a nitrogen environment, and annealing at 60-100 ℃ for 5-15 min to form the perovskite layer.
13. The method for manufacturing an optoelectronic device according to claim 11, wherein in step S22, the zwitterionic polymer is dissolved in trifluoroethanol to prepare a solution to be used with a mass concentration of 0.1-0.4 mg/mL.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116669449A (en) * 2023-08-02 2023-08-29 宁德时代新能源科技股份有限公司 Perovskite solar cell, preparation method thereof and electric equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116669449A (en) * 2023-08-02 2023-08-29 宁德时代新能源科技股份有限公司 Perovskite solar cell, preparation method thereof and electric equipment

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