CN105870347A - Quantum dot light-emitting device, fabrication method thereof, display substrate and display device - Google Patents
Quantum dot light-emitting device, fabrication method thereof, display substrate and display device Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
- H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention relates to a quantum dot light-emitting device, a fabrication method thereof, a display substrate and a display device. The quantum dot light-emitting device comprises a substrate, a first electrode layer, a luminous layer, a second electrode layer and a package layer, wherein the first electrode layer, the luminous layer, the second electrode layer and the package layer are sequentially formed on the substrate, the luminous layer comprises a quantum dot luminous material, a fluorescent material is arranged between the first electrode layer and the second electrode layer and comprises a thermally activated delayed fluorescence (TADF) material, one of the first electrode layer and the second electrode layer is a positive electrode layer, and correspondingly, the other one of the first electrode layer and the second electrode layer is a negative electrode layer.
Description
Technical field
It relates to quantum dot light emitting device and preparation method thereof, display base plate and display device.
Background technology
Quantum dot (Quantum Dot) be conduction band electron, valence band hole and exciton in three spaces
The nanometer semiconductor structure held onto on direction.For example, it may be one is by II-VI group or iii-v
Elementary composition nano-particle.The particle diameter of quantum dot is typically in the range of between 1-10nm, due to electronics and hole
By quantum confinement, continuous print band structure becomes the discrete energy levels structure with molecular characterization, can after being excited
To launch fluorescence.Based on quantum effect, quantum dot is at solaode, luminescent device, optical bio mark
The fields such as note are with a wide range of applications.Scientist has invented many different methods to manufacture quantum
Point, and expect that this nano material has in the nanoelectronics (nano-electronics) of 21st century
Application potential greatly.
The incentive mechanism of quanta point electroluminescent device mainly has two ways, and a kind of is the direct of carrier
Inject, i.e. hole is injected into quantum dot light emitting layer from hole transmission layer, and electronics is injected into from electron transfer layer
Quantum dot light emitting layer, hole and electronics are combined into excitonic luminescence in quantum dot light emitting layer；Another kind is energy
The mode of amount transmission, energy is directly passed to quantum dot and then luminescence by the exciton i.e. formed in transport layer.
Instantly typical light emitting diode with quantum dots structure is a hole injection layer, a hole transport
Layer, electron transfer layer, a quantum dot light emitting layer, these electron transfer layers, hole transmission layer,
Hole injection layer can be organic molecule, organic polymer, it is also possible to is inorganic, metal oxide.But
It is, owing to the valence band of quantum dot is well below the highest occupied orbital (HOMO) energy of hole transmission layer
Level, the injectability in hole is poor, causes carrier uneven, causes the degraded of leakage current and device, from
And affect luminous efficiency and the life-span of device.
Summary of the invention
Embodiment of the disclosure and provide a kind of quantum dot light emitting device, including: substrate and sequentially form
The first electrode layer, luminescent layer, the second electrode lay and encapsulated layer on the substrate, wherein, described
Photosphere includes quantum dot light emitting material, is provided with phosphor between described first electrode layer and the second electrode lay
Material, described fluorescent material includes thermal excitation delayed fluorescence material；Described first electrode layer and described second electricity
One of pole layer is anode layer, and the another one in described first electrode layer and described the second electrode lay is negative electrode
Layer.
In quantum dot light emitting device described in providing in the disclosure, such as, described quantum dot light emitting device
Meet at least one following two conditions: described fluorescent material and described quantum dot light emitting material codope shape
Become described luminescent layer；With, described fluorescent material forms energy transfer layer in described luminescent layer one or both sides,
Described energy transfer layer contacts with described luminescent layer.
In quantum dot light emitting device described in providing in the disclosure, such as, described fluorescent material is by single
Thermal excitation delayed fluorescence material composition.
In quantum dot light emitting device described in providing in the disclosure, such as, described thermal excitation delayed fluorescence
Material is 2,4,5,6-tetra-(9-carbazyl)-m-dicyanobenzene (4CzIPN).
In quantum dot light emitting device described in providing in the disclosure, such as, described thermal excitation delayed fluorescence
Material is the mixture including material of main part and guest materials.
In quantum dot light emitting device described in providing in the disclosure, such as, described fluorescent material also includes
Not there is the fluorescent material of thermal excitation delayed fluorescence characteristic.
In quantum dot light emitting device described in providing in the disclosure, such as, described material of main part includes 1,2-
Two carbazole-4,5-dicyanobenzenes (2-CzPN), (3'-(4,6-diphenyl-1,3,5-triazines-2-base)-(1,1'-
Biphenyl)-3-base) double (carbazole-9-the base)-1,4-dicyanobenzenes (CzTPN) of-9H-carbazole (3-CzTRZ) and 2,5-
In at least one, described guest materials includes at least one in DFDB-QA and DMeDB-QA,
The described fluorescent material without thermal excitation delayed fluorescence characteristic includes double (N-the carbazole)-1,1'-biphenyl of 4,4'-
(DBP)。
In quantum dot light emitting device described in providing in the disclosure, such as, described thermal excitation delayed fluorescence
The fluorescence emission spectrum of material is least partially overlapped with described quantum dot light emitting absorbed spectrum, and overlapping
The area of part accounts for more than the 30% of the fluorescence emission area under spectrum of described guest materials.
In quantum dot light emitting device described in providing in the disclosure, such as, described quantum dot light emitting material
Including at least one in red light quantum point, green light quantum point and blue light quantum point.
In quantum dot light emitting device described in providing in the disclosure, such as, described red light quantum point is maximum
Emission wavelength is 550-650nm, described green light quantum point maximum emission wavelength is 480-550nm, described
Blue light quantum point maximum emission wavelength is 400-480nm.
In quantum dot light emitting device described in providing in the disclosure, such as, described quantum dot light emitting material
It is the zinc sulfide with core/shell structure.
In quantum dot light emitting device described in providing in the disclosure, such as, described quantum dot light emitting material
Surface has part, and described part selects free phosphate radical part, thiol ligand and the group of Carboxylic acid ligand composition.
In quantum dot light emitting device described in providing in the disclosure, such as, described thermal excitation delayed fluorescence
Material forms energy transfer layer, described energy transfer layer and described luminescence in described luminescent layer one or both sides
Layer contacts, and the thickness of described energy transfer layer is between 3-80nm.
In quantum dot light emitting device described in providing in the disclosure, such as, described quantum dot light emitting device
Also include following both at least one: the hole set gradually between described anode layer and described luminescent layer
Implanted layer, hole transmission layer and hole blocking layer；With, depend between described cathode layer and described luminescent layer
The electron injecting layer of secondary setting, electron transfer layer and idea barrier layer.
In quantum dot light emitting device described in providing in the disclosure, such as, described substrate is array base palte,
Described anode is electrically connected with the switch element in described array base palte.
Embodiment of the disclosure and also provide for a kind of method preparing quantum dot luminescent device, including: base is provided
Plate；Sequentially form the first electrode layer, luminescent layer, the second electrode lay and encapsulated layer on the substrate, its
In, described luminescent layer include quantum dot light emitting material, described method be additionally included in described first electrode layer and
Arranging fluorescent material between the second electrode lay, described fluorescent material includes thermal excitation delayed fluorescence material；Institute
State one of the first electrode layer and described the second electrode lay for anode layer, described first electrode layer and described second
Another one in electrode layer is cathode layer.
In quantum dot light emitting device described in providing in the disclosure, such as, described at described first electrode
Arranging fluorescent material between layer and the second electrode lay, described fluorescent material includes thermal excitation delayed fluorescence material
Including following both at least one: described fluorescent material and described quantum dot light emitting material codope are formed
Described luminescent layer；With, described fluorescent material forms energy transfer layer in described luminescent layer one or both sides,
Described energy transfer layer contacts with described luminescent layer.
Embodiment of the disclosure and also provide for a kind of display base plate, including quantum dot light emitting device as above
Part, plurality of described quantum dot light emitting device arrangements becomes the form of array.
Embodiment of the disclosure and also provide for a kind of display base plate, including display base plate as above.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme of the embodiment of the present invention, the accompanying drawing of embodiment will be made below
Introduce simply, it should be apparent that, the accompanying drawing in describing below merely relates to some embodiments of the present invention,
Rather than limitation of the present invention.
The OLED structural representation that Fig. 1 provides for one embodiment of the invention；
The OLED structural representation that Fig. 2 provides for further embodiment of this invention；
The OLED structural representation that Fig. 3 provides for further embodiment of this invention；
The OLED structural representation that Fig. 4 provides for further embodiment of this invention；
The OLED structural representation that Fig. 5 provides for further embodiment of this invention.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with this
The accompanying drawing of bright embodiment, is clearly and completely described the technical scheme of the embodiment of the present invention.Obviously,
Described embodiment is a part of embodiment of the present invention rather than whole embodiments.Based on being retouched
The embodiments of the invention stated, those of ordinary skill in the art are obtained on the premise of without creative work
The all other embodiments obtained, broadly fall into the scope of protection of the invention.
Unless otherwise defined, technical term used herein or scientific terminology should be neck belonging to the present invention
There is in territory the ordinary meaning that the personage of general technical ability is understood.Present patent application description and power
" first ", " second " and the similar word that use in profit claim are not offered as any order, quantity
Or importance, and be used only to distinguish different ingredients.Equally, the class such as " " or " "
Do not indicate that like word quantity limits, but represent and there is at least one yet.
The structural formula of the compound that present document relates to is as follows:
2-CzPN)
3-CzTRZ:(3 '-(4,6-diphenyl-1,3,5-triazin-2-yl)-(1,1 '-biphenyl)-3-yl)-9-carbazole
Double (carbazole-9-)-Isosorbide-5-Nitrae-dicyanobenzenes of CzTPN:2,5-,
2,5-bis(carbazol-9-yl)-1,4-dicyanobenzene
DFDB-QA
DMeDB-QA
DBP
The existing commonplace way optimizing quantum dot luminescent device is from the injection of carrier, transmission
Start with, select suitable hole injection layer HIL, hole transmission layer HTL, electron transfer layer ETL, electricity
Sub-implanted layer EIL etc. carrys out the structure of optimised devices, improves the performance of device.
TADF mechanism is to utilize to have poor (the Δ E of smaller singlet state triplet energy levelST) organic
Small molecule material, its triplet exciton under environment thermal energy can by reverse intersystem crossing (RISC) this
One process is converted into the mechanism of singlet excitons.Its device internal quantum efficiency can reach 100% in theory.
More specifically, as a example by TADF material, object dopant material, in the case of electrical pumping,
The singlet excited generated in TADF material of main part and the ratio of triplet excited state are 1:3.Have relatively
Poor (the Δ E of little singlet state-triplet energy levelST) TADF material of main part under the effect of environment thermal energy,
Its triplet excited state can be converted into singlet excited by reverse intersystem crossing (RISC) process.Work as TADF
When material of main part and quantum dot light emitting material have good energy match relation, host molecule is to guest molecule
Between son, the leading mechanism of energy transfer is the transfer of long-range Foster type energy, i.e. singlet state-singlet energy
The mode of transfer.Based on above-mentioned principle, guest molecule is possible not only to obtain the main body substance directly generated and swashs
Send out the energy of state, it is also possible to obtain be converted into the triplet exciton of singlet excitons via RISC process
Energy, its internal quantum efficiency also can reach 100% in theory.Visible, utilize the exciton that TADF produces
Transfer energy to quantum dot light emitting layer, the luminescence enhancement of quantum dot can be made.
Fig. 1 is a kind of quantum dot light emitting device architecture schematic diagram that the embodiment of the present invention provides.This quantum dot
Luminescent device such as includes: substrate 100 and be sequentially formed at the first electrode layer on described substrate 100
101, luminescent layer 102, the second electrode lay 103 and encapsulated layer 104.Described luminescent layer 102 includes quantum
Point luminescent material, is provided with fluorescent material between described first electrode layer 101 and the second electrode lay 103,
Described fluorescent material includes thermal excitation delayed fluorescence (Thermally Activated Delayed
Fluorescence, TADF) material；Described first electrode layer 101 is anode layer or cathode layer and corresponding
The described the second electrode lay 103 in ground is cathode layer or anode layer.In the present embodiment, thermal excitation delayed fluorescence
(TADF) material and quantum dot light emitting material codope form described luminescent layer 102.Described fluorescent material
Refer to including thermal excitation delayed fluorescence material: described fluorescent material at least contains a kind of thermal excitation delayed fluorescence
Material, it is also possible to containing other fluorescent materials.
Fig. 2 is the another kind of quantum dot light emitting device architecture schematic diagram that the embodiment of the present invention provides.This quantum
Point luminescent device such as includes: substrate 200 and be sequentially formed at the first electrode on described substrate 200
Layer 201, energy transfer layer 205, luminescent layer 202, the second electrode lay 203 and encapsulated layer 204.At this
In embodiment, luminescent layer 202 is formed by quantum dot light emitting material, and includes thermal excitation delayed fluorescence
(TADF) fluorescent material of material forms the energy transfer layer 205 contacted with described luminescent layer 202.
Fig. 3 is the another kind of quantum dot light emitting device architecture schematic diagram that the embodiment of the present invention provides.This quantum
Point luminescent device such as includes: substrate 300 and be sequentially formed at the first electrode on described substrate 300
Layer the 301, first energy transfer layer 305, luminescent layer the 302, second energy transfer layer the 306, second electrode
Layer 303 and encapsulated layer 304.In the present embodiment, luminescent layer 302 is formed by quantum dot light emitting material,
And include that the fluorescent material of thermal excitation delayed fluorescence (TADF) material is formed and described luminescent layer 302 phase
First energy transfer layer 305 and the second energy transfer layer 306 of contact.
Fig. 4 is the another kind of quantum dot light emitting device architecture schematic diagram that the embodiment of the present invention provides.This quantum
Point luminescent device such as includes: substrate 400 and be sequentially formed at the first electrode on described substrate 400
Layer the 401, first energy transfer layer 405, luminescent layer the 402, second energy transfer layer the 406, second electrode
Layer 403 and encapsulated layer 404.In the present embodiment, thermal excitation delayed fluorescence (TADF) material and quantum
Point luminescent material codope forms described luminescent layer 402, and thermal excitation delayed fluorescence (TADF) material
Form the first energy transfer layer 405 and the second energy transfer layer 406 contacted with described luminescent layer 402.
Fig. 5 is the another kind of quantum dot light emitting device architecture schematic diagram that the embodiment of the present invention provides.This quantum
Point luminescent device such as includes: substrate 500 and be sequentially formed at the first electrode on described substrate 500
Layer 501, hole injection layer 508, hole transmission layer 509, hole blocking layer 510, luminescent layer 502,
Electronic barrier layer 511, electron transfer layer 512, electron injecting layer 513, the second electrode lay 503 and encapsulation
Layer 504.In the present embodiment, thermal excitation delayed fluorescence (TADF) material is with quantum dot light emitting material altogether
Doping forms described luminescent layer 502, and the first electrode layer 501 is anode layer, and the second electrode lay 503 is cloudy
Pole layer.It should be appreciated that above-mentioned hole injection layer 508, hole transmission layer 509, electron transfer layer
512, electron injecting layer 513, hole blocking layer 510, electronic barrier layer 511 are the most optional, can
To increase according to practical situation or to reduce.
In the above-described embodiment, described thermal excitation delayed fluorescence material such as can select then ΔS, T＜
The compound of 0.1eV.In the above-described embodiment, described fluorescent material such as can be by single heat shock
Send out delayed fluorescence material composition.Such as, described thermal excitation delayed fluorescence material can be 2,4,5,6-tetra-(9-
Carbazyl)-m-dicyanobenzene (4CzIPN).Or, described thermal excitation delayed fluorescence material can also be for bag
Including the mixture of material of main part and guest materials, such as, described material of main part is selected from 1,2-bis-carbazole-4,
5-dicyanobenzenes (2-CzPN), (3'-(4,6-diphenyl-1,3,5-triazine-2-base)-(1,1'-biphenyl)-3-
Base)-9H-carbazole (3-CzTRZ), 2,5-double (carbazole-9-base)-1,4-dicyanobenzenes (CzTPN)
At least one, described guest materials is selected from least one of DFDB-QA, DMeDB-QA.Or,
Described thermal excitation delayed fluorescence material can further include does not has thermal excitation delayed fluorescence characteristic
Fluorescent material, such as, described material of main part be selected from 1,2-bis-carbazole-4,5-dicyanobenzenes (2-CzPN),
(3'-(4,6-diphenyl-1,3,5-triazine-2-base)-(1,1'-biphenyl)-3-base)-9H-carbazole (3-CzTRZ),
At least one of 2,5-double (carbazole-9-base)-Isosorbide-5-Nitrae-dicyanobenzenes (CzTPN), described guest materials selects
From at least one of DFDB-QA, DMeDB-QA, described do not have thermal excitation delayed fluorescence characteristic
Fluorescent material includes double (N-the carbazole)-1,1'-biphenyl (DBP) of 4,4'-.
In the above-described embodiment, described quantum dot light emitting material can select red quantum as required
Point, green light quantum point and blue light quantum point, such as, described red light quantum point maximum emission wavelength is
550-650nm, described green light quantum point maximum emission wavelength are 480-550nm, described blue light quantum point
Maximum emission wavelength is 400-480nm；Such as, described quantum dot light emitting material can be to have core shell knot
The zinc sulfide of structure.
Owing to the Main Function of thermal excitation delayed fluorescence material is to strengthen energy vectors point luminescent material
Transmission, therefore, the selection standard of thermal excitation delayed fluorescence material essentially consists in and allows thermal excitation delayed fluorescence
The energy level of material and the level-density parameter of quantum dot light emitting material so that energy is from thermal excitation delayed fluorescence material
More efficient to the transmission of quantum dot luminescent material.Such as, the fluorescence of described thermal excitation delayed fluorescence material
Emission spectrum is least partially overlapped with described quantum dot light emitting absorbed spectrum, and the area of lap
Account for more than the 30% of fluorescence emission area under spectrum of described guest materials, more than 40%, more than 50%, 60%
Above, more than 70% or more than 80%.
In the above-described embodiment, such as, quantum dot light emitting material surface has part, described part example
As selected free phosphate radical part, thiol ligand and the group of Carboxylic acid ligand composition.Owing to quantum dot is easily reunited
And cause luminous cancellation, in quantum dot light emitting material surface linking ligand, can effectively prevent quantum dot
Reunite and improve luminous efficiency, and the decomposition of quantum dot light emitting material can be slowed down.
In the above-described embodiment, such as, the thickness of described energy transfer layer between 3-80nm or
Between 5-50nm or between 10-30nm.The setting of energy transfer layer thickness should efficient with energy
Transmission is target, and thickness is excessive, then exciton cannot be effectively transferred to quantum dot light emitting material；Thickness mistake
Little, then the effect that energy transfer layer plays is restricted again.
In the above-described embodiment, such as, hole injection layer such as can use triphenyl amine compound or
Have organic layer that p-type adulterates or polymer to make, as three-[4-(5-phenyl-2-thienyl) benzene] amine,
4,4 ', 4 "-three [2-naphthyl (phenyl) amino] triphenylamine (2-TNATA) or 4,4 ', 4 "-three-(3-methyl
Phenylaniline base) triphenylamine (m-MTDATA), phthalein mountain valley with clumps of trees and bamboo copper (CuPc), Pedot:Pss, TPD
Or F4TCNQ.Hole injection layer thickness can be such as 1～100nm, or 10～50nm.
In the above-described embodiment, such as, hole transmission layer such as can use aromatic diamine compounds,
Triphenyl amine compound, aromatic triamine compounds, benzidine derivant, triaryl amine polymer and
Carbazole polymer is made.Such as NPB, TPD, TCTA and polyvinylcarbazole or monomer whose.Empty
Cave transport layer thickness can be such as 20～200nm, or 30～80nm.
In the above-described embodiment, such as, electron transfer layer such as can use phenanthroline derivant,
Zole derivatives, thiazole, imdazole derivatives, metal complex, the derivant of anthracene.Concrete example
Including: 8-hydroxyquinoline aluminum (Alq3), 8-hydroxyquinoline lithium (Liq), 8-hydroxyquinoline gallium, double [2-(2-
Hydroxy phenyl-1)-pyridine] beryllium, 2-(4-diphenyl)-5-(4-2-methyl-2-phenylpropane base)-1,3,4-diazole (PBD),
1,3,5-tri-(N-phenyl-2-benzimidazolyl-2 radicals) benzene (TPBI), BCP, Bphen etc..Electric transmission
Layer thickness can be such as 20～500nm, or 50～100nm.
In the above-described embodiment, such as, electron injecting layer such as can use alkali metal oxide, alkali
Metal fluoride etc..Alkali metal oxide includes lithium oxide (Li2O), oxidation lithium boron (LiBO), silica
Change potassium (K2SiO3), cesium carbonate (Cs2CO3) etc.；Alkali metal fluoride include lithium fluoride (LiF),
Sodium fluoride (NaF) etc..Electron injecting layer thickness can be such as 0.5～3nm.
Some embodiments of the present invention additionally provide a kind of display base plate, many including arranging in array format
Individual above-mentioned quantum dot light emitting device.Some embodiments of the present invention additionally provide a kind of display device, including
Above-mentioned display base plate.
Embodiments of the invention also provide for a kind of method preparing quantum dot luminescent device, including: base is provided
Plate；Sequentially form the first electrode layer, luminescent layer, the second electrode lay and encapsulated layer on the substrate, its
In, described luminescent layer include quantum dot light emitting material, described method be additionally included in described first electrode layer and
Arranging fluorescent material between the second electrode lay, described fluorescent material includes thermal excitation delayed fluorescence
(Thermally Activated Delayed Fluorescence, TADF) material；Described first electrode layer
It is cathode layer or anode layer for anode layer or cathode layer and the most described the second electrode lay.
In the above-mentioned methods, such as, described arrange between described first electrode layer and the second electrode lay glimmering
Luminescent material, described fluorescent material includes thermal excitation delayed fluorescence (Thermally Activated Delayed
Fluorescence, TADF) material include following both at least one: by described fluorescent material and described amount
Son point luminescent material codope forms described luminescent layer；With described fluorescent material in described luminescent layer side or
Both sides form energy transfer layer, and described energy transfer layer contacts with described luminescent layer.
In above-mentioned embodiment, each Rotating fields of quantum dot light emitting device can use conventional method to make.Example
As, solution methods deposition anode layer, hole injection layer, hole transmission layer, luminescent layer, electricity can be used
Sub-transport layer, electron injecting layer, cathode layer.Select suitable solvent, deposit other one layer on each layer,
The layer formerly deposited can be protected not to be destroyed.Deposition process such as can use spin coating, sprays or print
Brush technology implementation, or such as can also use sputtering, electron beam evaporation, vacuum evaporation or chemical gaseous phase
Deposition is implemented.
The quantum dot light emitting device of embodiment of the present invention offer is be provided below with reference to embodiment
Manufacturing process.
Embodiment 1: device architecture is:
[ITO/PEDOT:PSS/poly-TPD/PVK/DPEPOCz:FIrpic:QD/ZnO/LiF/Al]
Making step includes:
1), the glass substrate containing ito transparent electrode (anode) is cleaned: with deionized water and ethanol purge
And supersound process 20 minutes, then dries up rapidly by nitrogen gun, then ozone processes 10 minutes, with clearly
Clean ITO surface, and promote the work function of ITO electrode；
2), the making of hole injection layer: in air, in glass substrate after the cleaning with 3500 turns/
Minute rotating speed spin coating PEDOT:PSS, spin-coating time is 45s.After spin coating is complete in atmosphere 120 DEG C move back
Fire 20 minutes, dries non-volatile complete liquid；
3), the making of hole transmission layer: be transferred to glove box, with 2500 turns on PEDOT:PSS layer
/ minute rotating speed spin coating poly-TPD solution (concentration is 10mg/ml), spin-coating time is 45s.Spin coating
After completing, in glove box, 110 DEG C of annealing form poly-TPD layer in 30 minutes；
4), the making of hole blocking layer: with the rotating speed spin coating of 2000 revs/min on poly-TPD layer
PVK solution (concentration is 2mg/ml), spin-coating time is 45s.Spin coating complete after in glove box 170 DEG C
Anneal 30 minutes and form PVK layer；
5), the making of luminescent layer: luminescent layer is co-doped with forming by DPEPOCz:FIrpic:QD, wherein
DPEPOCz:FIrpic forms TADF System forming exciton, and exciton energy is passed to quantum dot light emitting
Material；
6), the making of electron transfer layer: with the rotating speed spin coating ZnO of 2000 revs/min on EML layer
Solution (concentration is 30mg/ml), spin-coating time is 45s；
7), the making of electron injecting layer: device spin coating completed is put in vacuum evaporation cavity, evaporation
LiF；
8), the making of negative electrode: evaporation cathode aluminum on LiF layer, obtain quantum dot light emitting device.
The above is only the exemplary embodiment of the present invention, not for the protection model limiting the present invention
Enclosing, protection scope of the present invention is determined by appended claim.
Claims (19)
1. a quantum dot light emitting device, including: substrate and sequentially form on the substrate
One electrode layer, luminescent layer, the second electrode lay and encapsulated layer,
Wherein, described luminescent layer includes quantum dot light emitting material, described first electrode layer and the second electrode lay
Between be provided with fluorescent material, described fluorescent material includes thermal excitation delayed fluorescence material；Described first electricity
One of pole layer and described the second electrode lay are anode layer, in described first electrode layer and described the second electrode lay
Another one be cathode layer.
Quantum dot light emitting device the most according to claim 1, wherein, described quantum dot light emitting device
Part meets at least one following two conditions:
Described fluorescent material and described quantum dot light emitting material codope form described luminescent layer；With
Described fluorescent material forms energy transfer layer in described luminescent layer one or both sides, and described energy transmits
Layer contacts with described luminescent layer.
Quantum dot light emitting device the most according to claim 1 and 2, wherein, described fluorescent material
It is made up of single thermal excitation delayed fluorescence material.
Quantum dot light emitting device the most according to claim 3, wherein, described thermal excitation postpones glimmering
Luminescent material is 2,4,5,6-tetra-(9-carbazyl)-m-dicyanobenzene (4CzIPN).
Quantum dot light emitting device the most according to claim 1 and 2, wherein said thermal excitation postpones
Fluorescent material is the mixture including material of main part and guest materials.
Quantum dot light emitting device the most according to claim 5, wherein said fluorescent material also includes
Not there is the fluorescent material of thermal excitation delayed fluorescence characteristic.
Quantum dot light emitting device the most according to claim 6, wherein said material of main part includes 1,2-
Two carbazole-4,5-dicyanobenzenes (2-CzPN), (3'-(4,6-diphenyl-1,3,5-triazines-2-base)-(1,1'-
Biphenyl)-3-base) double (carbazole-9-the base)-1,4-dicyanobenzenes (CzTPN) of-9H-carbazole (3-CzTRZ) and 2,5-
In at least one, described guest materials includes at least one in DFDB-QA and DMeDB-QA,
The described fluorescent material without thermal excitation delayed fluorescence characteristic includes double (N-the carbazole)-1,1'-biphenyl of 4,4'-
(DBP)。
8. according to claim 1-2,4, quantum dot light emitting device described in any one of 6-7, Qi Zhongsuo
State the fluorescence emission spectrum of thermal excitation delayed fluorescence material with described quantum dot light emitting absorbed spectrum extremely
Small part is overlapping, and the area of lap account for described guest materials fluorescence emission area under spectrum 30%
Above.
9. according to claim 1-2,4, quantum dot light emitting device described in any one of 6-7, Qi Zhongsuo
State quantum dot light emitting material and include at least in red light quantum point, green light quantum point and blue light quantum point
Kind.
Quantum dot light emitting device the most according to claim 9, wherein said red light quantum point is maximum
Emission wavelength is 550-650nm, described green light quantum point maximum emission wavelength is 480-550nm, described
Blue light quantum point maximum emission wavelength is 400-480nm.
11. according to claim 1-2,4, quantum dot light emitting device described in any one of 6-7, wherein
Described quantum dot light emitting material is the zinc sulfide with core/shell structure.
12. according to claim 1-2,4, quantum dot light emitting device described in any one of 6-7, Qi Zhongsuo
State quantum dot light emitting material surface and there is part, described part select free phosphate radical part, thiol ligand and
The group of Carboxylic acid ligand composition.
13. according to claim 1-2,4, quantum dot light emitting device described in any one of 6-7, Qi Zhongsuo
State thermal excitation delayed fluorescence material and form energy transfer layer, described energy in described luminescent layer one or both sides
Transfer layer contacts with described luminescent layer, and the thickness of described energy transfer layer is between 3-80nm.
14. according to claim 1-2,4, quantum dot light emitting device described in any one of 6-7, also include
At least one both following:
The hole injection layer that sets gradually between described anode layer and described luminescent layer, hole transmission layer and
Hole blocking layer；With
The electron injecting layer that sets gradually between described cathode layer and described luminescent layer, electron transfer layer and
Idea barrier layer.
15. according to claim 1-2,4, quantum dot light emitting device described in any one of 6-7, Qi Zhongsuo
Stating substrate is array base palte, and described anode is electrically connected with the switch element in described array base palte.
16. 1 kinds of methods preparing quantum dot luminescent device, including:
Substrate is provided；
Sequentially form the first electrode layer, luminescent layer, the second electrode lay and encapsulated layer on the substrate,
Wherein, described luminescent layer includes that quantum dot light emitting material, described method are additionally included in described first electricity
Arranging fluorescent material between pole layer and the second electrode lay, described fluorescent material includes thermal excitation delayed fluorescence material
Material；One of described first electrode layer and described the second electrode lay are anode layer, described first electrode layer and institute
Stating the another one in the second electrode lay is cathode layer.
17. methods according to claim 16, described at described first electrode layer and the second electrode
Fluorescent material is set between Ceng, described fluorescent material include thermal excitation delayed fluorescence material include following both
At least one:
Described fluorescent material and described quantum dot light emitting material codope are formed described luminescent layer；With
Described fluorescent material forms energy transfer layer in described luminescent layer one or both sides, and described energy transmits
Layer contacts with described luminescent layer.
18. 1 kinds of display base plates, including the quantum dot light emitting device as described in any one of claim 1-17
Part, plurality of described quantum dot light emitting device arrangements becomes the form of array.
19. 1 kinds of display devices, including display base plate as claimed in claim 18.
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| CN201610237544.9A CN105870347A (en) | 2016-04-15 | 2016-04-15 | Quantum dot light-emitting device, fabrication method thereof, display substrate and display device |
| JP2017534560A JP6929777B2 (en) | 2016-02-18 | 2016-11-30 | Quantum dot light emitting device and its manufacturing method, display board and display device |
| PCT/CN2016/107830 WO2017140159A1 (en) | 2016-02-18 | 2016-11-30 | Quantum dot light-emitting device and fabrication method therefor, display substrate and display device |
| EP16876957.8A EP3419070B1 (en) | 2016-02-18 | 2016-11-30 | Quantum dot light-emitting device |
| US15/539,315 US10217953B2 (en) | 2016-02-18 | 2016-11-30 | Quantum dot light-emitting device, fabricating method thereof, and display substrate |
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