CN113138441A - High-quality factor dielectric nano antenna based on shallow etching disc structure and application thereof - Google Patents
High-quality factor dielectric nano antenna based on shallow etching disc structure and application thereof Download PDFInfo
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- CN113138441A CN113138441A CN202110472100.4A CN202110472100A CN113138441A CN 113138441 A CN113138441 A CN 113138441A CN 202110472100 A CN202110472100 A CN 202110472100A CN 113138441 A CN113138441 A CN 113138441A
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Abstract
The invention provides a high-quality factor dielectric nano antenna based on a shallow etching disc structure and application thereof in spectrum selection. The dielectric nano antenna comprises an ultrathin silicon film and a silicon disc periodic array arranged on the ultrathin silicon film. The dielectric nano antenna adopts silicon with extremely low absorption to light as a dielectric material, and can realize lossless transmission of optical signals. The low loss characteristic can reduce the attenuation of optical signals while obtaining higher spectral selectivity. And the confinement mode in the magnetic resonance excitation waveguide of the shallow etching disc structure forms guided mode resonance, so that the wavelength selection of high-quality factors and extremely narrow bandwidth (less than 2 nanometers) can be realized. The dielectric nano antenna is based on silicon on insulator, the preparation of the dielectric nano antenna is compatible with a microelectronic complementary metal oxide semiconductor process, and large-area and low-cost preparation can be realized. The dielectric nano antenna prepared by adopting the shallow etching disc structure can realize the spectrum selection of free space light in a near infrared band, and the quality factor can reach 864.
Description
Technical Field
The invention belongs to the technical field of optical nano devices, and particularly relates to a high-quality factor dielectric nano antenna based on a shallow etching disc structure and application thereof.
Background
In modern optical systems, the integration and miniaturization of optical elements have become the current trend, and therefore, sub-wavelength-scale micro-nano optical elements are an important part to solve the requirement. In the prior near-infrared optical system, the wavelength selection element mainly adopts a metal-medium-metal reflector or a structural optical filter consisting of a plurality of layers of medium films, thereby realizing the screening of monochromatic light or wavelength ranges.
The metal-medium-metal reflector limits the maximum reflectivity of the metal because of certain absorption loss of the metal, and the surface of the reflector is easy to deform under high-intensity light intensity due to the existence of a metal skin effect, so that the quality of a light beam is influenced. The multilayer dielectric film is formed by alternately depositing and laminating two or more dielectric materials with different refractive indexes, generally, the tolerance on the thickness of each layer and the error of film forming quality is low, so that high requirements on the control of a preparation process and the thickness of a film layer are provided, and the minimum size of the whole device is limited by the structure of the multiple layers.
In the filter realized by the single-layer dielectric film, the single gradient material grating (CN 106772741A) uses a gradient refractive index medium to replace a multilayer film, so that the size limit of the multilayer film is reduced, but the filter has the problem of difficult processing. The dielectric rod array (CN 108919401a) realizes a single simple structure of narrow-band filter by using magnetic resonance, but still has a high limit of 500 nm, and has a bandwidth of 2.1nm and a quality factor of only 348 (calculated by the farot line fitting formula) at the design wavelength.
In summary, there is no all-dielectric micro-nano optical element with an ultra-thin structure and a high quality factor for realizing extremely high spectral selectivity.
Disclosure of Invention
Aiming at the defects and shortcomings of the prior art, the invention provides a high-quality factor dielectric nano antenna based on a shallow-etching disc structure and application thereof in spectrum selection by utilizing the polaron resonance characteristic that a dielectric material can be polarized and generate internal displacement current under the irradiation of incident light.
A high-quality factor dielectric nano antenna based on a shallow etching disc structure comprises an ultrathin silicon film and a silicon disc periodic array arranged on the ultrathin silicon film.
In the technical scheme, the ultra-thin silicon film is used as a waveguide layer for providing a high-quality factor binding mode, and a mask layer is exposed on the waveguide layer and a device consisting of the periodic array of the ultra-shallow disks is etched. The device only allows light with specific wavelength to reflect in the reflection spectrum under the irradiation of a light source with vertical incidence, namely, only light with specific wavelength in the transmission spectrum is filtered.
Preferably, the disc is provided integrally with the ultra-thin silicon film. During processing, the disc is formed in situ on the silicon film by directly adopting an etching process.
In the technical scheme, when the light source is vertically incident on the circular disc of the periodic array, the incident light is coupled into the ultrathin silicon film through the circular disc to form guided-mode resonance. Without the disk, the waveguide mode in the ultra-thin silicon film cannot couple optically with free space, being a bound mode. Because the disc and the ultrathin silicon film are made of the same dielectric material, magnetic resonance in the disc is coupled with a waveguide mode in the ultrathin silicon film, the waveguide mode with a specific wavelength in the ultrathin silicon film is excited to be a leakage mode, guided mode resonance is formed, and spectrum selection of a light source is further realized.
Preferably, the ultrathin silicon film is a silicon film with silicon oxide as a substrate.
In the above technical solution, the ultra-thin silicon film can be grown on a silicon oxide substrate by magnetron sputtering or chemical vapor deposition. The silicon oxide substrate provides support for the ultrathin silicon film and enhances the mechanical strength of the ultrathin silicon film.
Preferably, the thickness of the silicon oxide substrate is 350 μm to 2mm, and the thickness of the ultra-thin silicon film is 120nm to 3 μm.
Preferably, the ultrathin silicon film is a silicon-on-insulator, and the silicon-on-insulator is a three-layer structure which comprises a silicon substrate, a silicon oxide middle layer and a silicon top layer; and the disc is integral with the top silicon layer. And during processing, the disc is formed in situ on the top silicon layer by directly adopting an etching process.
In the technical scheme, silicon with extremely low absorption to light is used as a dielectric material, so that high-efficiency and low-loss transmission of optical signals can be realized.
More preferably, the thickness of the silicon substrate is 350 μm to 2mm, the thickness of the silicon oxide intermediate layer is 120nm to 3 μm, and the thickness of the silicon top layer is 120nm to 1.5 μm.
Preferably, in the periodic array of the disks, the diameter of the disks is 60nm to 1 μm, the thickness of the disks is 10 nm to 220nm, and the period is 300nm to 1 μm.
In the above technical solution, the period includes a period in the X direction and a period in the Y direction in the periodic array structure, and both the periods are 300nm to 1 μm.
The invention also provides an application of the high-quality factor dielectric nano antenna based on the shallow etching disc structure in spectrum selection.
Preferably, the light source is vertically incident to the dielectric nano antenna, the dielectric nano antenna reflects light with a specific wavelength and transmits the rest of the light, and the selection of a spectrum with the specific wavelength is realized.
In the above technical solution, in the spectrum selection process, the principle is that the dielectric nano antenna of the present invention generates electromagnetic resonance under the excitation of light source irradiation, and the periodic array of the disk structure is coupled with the non-radiation mode, i.e. the waveguide mode supported in the ultra-thin silicon film, based on the magnetic resonance of the dielectric disk, to form guided mode resonance, which becomes a radiation mode detectable in free space. Since the waveguide mode in the ultra-thin silicon film is a resonant mode with infinite quality factor, a specific wavelength selection with extremely low bandwidth can be realized after coupling.
Preferably, the filtering performance of the dielectric nano antenna can be characterized by using a quality factor Q, and the quality factor Q is calculated according to a fanuo linear fitting formula:
wherein T is the transmittance, a1、a2And b is a curve fitting parameterNumber, gamma is resonance attenuation rate, j is imaginary unit, omega0The resonance center frequency, ω, is the spectral frequency.
Preferably, the light source is a wide-spectrum light source, and the wavelength range of the light source is 600-1700 nm.
Preferably, the signal light of the transmission/reflection spectral line is received by a spectrometer, and the working waveband of the spectrometer is 600-1700 nm.
The invention provides a high-quality factor medium nanometer light wave antenna with a shallow carving disc structure, which is mainly applied to two aspects: (1) the dielectric nano antenna has the advantages of high quality factor, extremely low light absorption and compatible micro-nano integration process, and can realize a micro-nano filter (namely spectrum selection) with high efficiency, low loss and narrow bandwidth. (2) The shallow-etching disc structure utilizes the coupling of a waveguide mode and a free space propagation mode, can further realize that wide-spectrum free space light is converted into monochromatic light with high quality factors to be coupled into micro-nano optical systems such as waveguides and the like, and is used for functions in the communication field such as wavelength division multiplexing and the like.
Compared with the prior art, the invention has the beneficial effects that:
the dielectric nano antenna adopts silicon with extremely low absorption to light as a dielectric material, and can realize lossless transmission of optical signals. The low loss characteristic can reduce the attenuation of optical signals while obtaining higher spectral selectivity. And the waveguide mode in the magnetic resonance excitation waveguide of the shallow-etching disc structure forms guided mode resonance, so that the wavelength selection of high-quality factors and extremely narrow bandwidth (less than 2 nanometers) can be realized.
The dielectric nano antenna is based on silicon on insulator, the preparation of the dielectric nano antenna is compatible with a microelectronic complementary metal oxide semiconductor process, and large-area and low-cost preparation can be realized. The dielectric nano antenna prepared by adopting the shallow etching disc structure can realize spectrum selection of free space light in a near infrared band, and the quality factor can reach 864.
Drawings
FIG. 1 is a schematic diagram of a high-Q dielectric nano-antenna based on a shallow etching disk structure according to an embodiment of the present invention;
FIG. 2 is a scanning electron microscope image of a high quality factor dielectric nanoantenna based on a shallow carved disk structure according to an embodiment;
FIG. 3 is a diagram of an electric field distribution of an yz plane of a high-quality factor dielectric nano-antenna based on a shallow carved disc structure at a resonant wavelength according to an embodiment;
FIG. 4 is a graph showing the transmittance calculated by simulation of the example as a function of the shift amount of a wavelength with respect to a reference wavelength of 1.5 μm, where λ01.5 microns;
FIG. 5 is a graph showing the transmittance measured in an experiment as a function of the shift amount of a wavelength with respect to a reference wavelength of 1.5 μm, where λ01.5 microns;
FIG. 6 is a partial graph of simulation experiment period versus selected wavelength in the examples.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings in which: the present embodiment is premised on the shallowly etched disc structure high quality factor dielectric nano-antenna, but the scope of the present invention is not limited to the following embodiments and embodiments.
As shown in fig. 1 and 2, a high-quality factor dielectric nano antenna based on a shallow carved disc structure comprises an ultrathin silicon film and a periodic array of discs arranged on the ultrathin silicon film.
The ultrathin silicon film is silicon on insulator and comprises a silicon substrate, a silicon oxide middle layer and a silicon top layer. The disc structure needs to partially etch the silicon top layer in the preparation process, so that the requirements on the edge quality and the depth control of etching are high. After etching, the non-disk area of the silicon top layer should be the remaining silicon top layer (top film), i.e. both the disk and the top film connected thereto are made of silicon.
Each cycle of the periodic array of disks consists of one disk and an underlying top film of the same material (silicon top layer).
Wherein the disk portion assumes the role of exciting magnetic resonances and the top film portion assumes the role of providing high quality factor waveguide modes. When free space light is perpendicularly incident on the structural units of the periodic array, the incident light forms magnetic resonance in the disk, waveguide mode propagation can be supported in the top layer film below the disk, but the top layer film cannot be optically coupled with the free space light and is in a bound mode.
Because the disk and the top layer film are made of the same dielectric material, the magnetic resonance in the disk can be coupled with the waveguide mode in the top layer film through the two connected structures, the waveguide mode with specific wavelength in the film can be excited to be changed into a leakage mode, guided mode resonance is formed, and spectrum selection of free space light is further achieved.
The structural size of the dielectric nano-antenna of the embodiment is designed by taking light with a target wavelength of about 1.5 microns as an example:
setting the thickness of a silicon substrate to be 500 mu m, the thickness of a silicon oxide middle layer to be 3 mu m, the thickness of an original silicon top layer to be 220 mu m, the diameter of a disc to be 160nm, the period to be 540nm (the period in the X direction and the period in the Y direction are both 540nm), and the thickness to be 40nm, wherein the thickness of a non-disc area of the original silicon top layer, namely the thickness of a top layer film, is 180 nm. A simulation experiment of spectral selection was performed at this structure size.
As shown in fig. 3, at the target resonant wavelength of 1.5 μm, the disc structure is tuned by the disc on the surface layer to a specific waveguide bound mode in the top film, and exhibits the electric field distribution characteristic of guided mode resonance.
As shown in fig. 4, for the change of the transmittance of the disc structure with the shift of the wavelength, the shift of the wavelength takes 1.5 microns as the reference wavelength, it can be seen that an extremely narrow high reflection resonance appears in the high transmission background of the near infrared band, and the filtering of the specific wavelength near 1.5 microns in the transmission spectrum, that is, the filtering of the specific wavelength in the reflection spectrum, can be realized. The dielectric nano antenna with the structural size designed above is proved to be capable of realizing screening of target wavelength light near 1.5 microns.
As shown in fig. 5, the results of the experimental measurement of the transmission of the disc structure in the near infrared band are consistent with the simulation results in fig. 3, and the machining of the actual structure may bring a certain size error, resulting in a deviation of the designed wavelength. The disc structure in the experiment can be calculated through fitting to realize the wavelength selection effect with the bandwidth of 1.5 nanometers, and the quality factor is as high as 864 (calculated by a Fano line type fitting formula).
Under other conditions, the selection of light with different wavelengths can be realized by adjusting the disc period. As shown in FIG. 6, the thickness of the silicon substrate is 500 μm, the thickness of the intermediate layer of silicon oxide is 3 μm, the thickness of the original top silicon layer is 220 μm, the diameter of the disk is 160nm, the thickness is 40nm, and the thickness of the top thin film is 180nm, the corresponding relationship between the disk period and the selected wavelength is shown.
Claims (10)
1. A high-quality factor dielectric nano antenna based on a shallow etching disc structure is characterized by comprising an ultrathin silicon film and a silicon disc periodic array arranged on the ultrathin silicon film.
2. The chiseled-based high-quality-factor dielectric nanoantenna of claim 1, wherein the disk is integral with the ultra-thin silicon film.
3. The chiseling-disk-structure-based high-quality-factor dielectric nanoantenna as claimed in claim 1, wherein the ultra-thin silicon film is a silicon film with a silicon oxide as a substrate.
4. The high quality factor dielectric nanoantenna based on the shallowly etched disk structure of claim 3, wherein the thickness of the silicon oxide substrate is 350 μm to 2mm, and the thickness of the ultra-thin silicon film is 120nm to 3 μm.
5. The high-quality-factor dielectric nanoantenna based on the shallow etching disk structure of claim 1, wherein the ultra-thin silicon film is a silicon-on-insulator (SOI) with a three-layer structure comprising a silicon substrate, a silicon oxide middle layer and a silicon top layer; and the disc is integrally arranged with the top silicon layer.
6. The high-quality-factor dielectric nanoantenna based on the shallowly etched disk structure of claim 5, wherein the thickness of the silicon substrate is 350 μm to 2mm, the thickness of the silicon oxide intermediate layer is 120nm to 3 μm, and the thickness of the silicon top layer is 120nm to 1.5 μm.
7. The high-quality-factor dielectric nanoantenna based on the shallowly carved disc structure of claim 1, wherein the diameter of the disc is 60nm to 1 μm, the thickness is 10 nm to 220nm, and the period is 300nm to 1 μm in the periodic array of the discs.
8. Use of a chiseled disk structure-based high quality factor dielectric nanoantenna in spectral selection, as claimed in claims 1-7.
9. The use according to claim 8, wherein a light source is incident perpendicularly to the dielectric nano-antenna, and the dielectric nano-antenna reflects light of a specific wavelength to achieve selection of a specific wavelength spectrum.
10. The use according to claim 9, wherein the light source is a broad spectrum light source having a wavelength in the range of 600 to 1700 nm.
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Cited By (1)
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| CN116256827A (en) * | 2023-05-16 | 2023-06-13 | 东北石油大学三亚海洋油气研究院 | Surface enhanced Raman scattering and quantum emission all-dielectric nano antenna |
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