CN113131333A - Heat sink, preparation method thereof and semiconductor laser system - Google Patents
Heat sink, preparation method thereof and semiconductor laser system Download PDFInfo
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- CN113131333A CN113131333A CN202110385325.6A CN202110385325A CN113131333A CN 113131333 A CN113131333 A CN 113131333A CN 202110385325 A CN202110385325 A CN 202110385325A CN 113131333 A CN113131333 A CN 113131333A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
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- Semiconductor Lasers (AREA)
Abstract
A heat sink and a preparation method thereof, a semiconductor laser system, the heat sink is provided with a first face and a second extension face which are opposite, the first face comprises a first step bearing face to an Nth step bearing face, a kth step bearing face is adjacent to a kth +1 step bearing face, the height from the first step bearing face to the Nth step bearing face is sequentially increased, the height from the second extension face at the bottom of the first step bearing face to the height from the second extension face at the bottom of the Nth step bearing face is sequentially increased, N is an integer larger than or equal to 2, and k is an integer larger than or equal to 1 and smaller than or equal to N-1. The heat sink can realize miniaturization and light weight.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a heat sink, a preparation method thereof and a semiconductor laser system.
Background
Since the advent of lasers, the demand and application of lasers in various fields are very wide, and as the output power of high-power semiconductor laser equipment is continuously increased, the weight and the volume of the laser equipment become one of the key problems restricting the application and the development of the high-power laser equipment. The current high-power semiconductor laser equipment still improves the output power as development, and the high-power laser equipment has the characteristics of complex structure and function, low energy conversion efficiency and the like, so that the realization of miniaturization and light weight of the high-power laser equipment is restricted.
Therefore, how to achieve miniaturization and light weight of the high-power laser equipment structure is a problem to be solved.
Disclosure of Invention
The invention aims to solve the technical problem that the miniaturization and light weight of a device are difficult to realize in the prior art.
In order to solve the above technical problem, the present invention provides a heat sink, wherein the heat sink has a first surface and a second extending surface opposite to each other, the first surface includes a first step bearing surface to an nth step bearing surface, the kth step bearing surface is adjacent to the (k + 1) th step bearing surface, the heights of the first step bearing surface to the nth step bearing surface are sequentially increased, the heights of the second extending surface at the bottom of the first step bearing surface to the second extending surface at the bottom of the nth step bearing surface are sequentially increased, N is an integer greater than or equal to 2, and k is an integer greater than or equal to 1 and less than or equal to N-1.
Optionally, the first step bearing surface to the nth step bearing surface are parallel to each other, and a first acute included angle is formed between the arrangement direction of the first step bearing surface to the nth step bearing surface and the first step bearing surface; a second acute included angle is formed between the second extension surface and the first step bearing surface; the difference between the second acute included angle and the first acute included angle is less than or equal to 1 degree.
Optionally, the second acute included angle is equal to the first acute included angle.
Optionally, the first acute included angle is 2.86 to 4.57 degrees.
Optionally, the second acute included angle is 2.86 degrees to 6 degrees.
Optionally, for each of the first step bearing surface to the nth step bearing surface, the thickness from the center of each step bearing surface to the second extension surface is consistent in the direction perpendicular to the first step bearing surface.
Optionally, for each of the first step bearing surface to the nth step bearing surface, the thickness from the center of each step bearing surface to the second extension surface is 2mm to 3mm in the direction perpendicular to the first step bearing surface.
Optionally, the material of the heat sink includes copper or an aluminum alloy.
The invention also provides a preparation method of the heat sink, which comprises the following steps: providing an initial heat sink having opposing first and second initial faces; machining the first initial surface, and machining the second initial surface to enable the initial heat sink to form a heat sink, enable the first initial surface to form a first surface of the heat sink, and enable the second initial surface to form a second extending surface of the heat sink; the first surface comprises a first step bearing surface and an Nth step bearing surface, the kth step bearing surface is adjacent to the (k + 1) th step bearing surface, the height from the first step bearing surface to the height from the Nth step bearing surface is sequentially increased, the height from a second extending surface at the bottom of the first step bearing surface to the height from the second extending surface at the bottom of the Nth step bearing surface is sequentially increased, N is an integer greater than or equal to 2, and k is an integer greater than or equal to 1 and less than or equal to N-1.
The present invention also provides a semiconductor laser system comprising: the heat sink of the present invention; and the laser chips are respectively positioned on the first step bearing surface to the Nth step bearing surface.
The technical scheme of the invention has the following advantages:
the heat sink provided by the technical scheme of the invention is provided with a first surface and a second extension surface which are opposite, wherein the first surface comprises a first step bearing surface to an Nth step bearing surface, the kth step bearing surface is adjacent to the kth +1 step bearing surface, the height from the first step bearing surface to the height from the Nth step bearing surface is sequentially increased, and the height from the second extension surface at the bottom of the first step bearing surface to the height from the second extension surface at the bottom of the Nth step bearing surface is sequentially increased. Therefore, the second extension surface is inclined, the inclined direction of the second extension surface is approximately close to the arrangement direction from the first step bearing surface to the Nth step bearing surface, the thickness from each step bearing surface to the second extension surface can be reduced, the whole thickness of the heat sink is reduced, and the miniaturization and the light weight of the heat sink are realized.
Furthermore, for each of the first step bearing surface to the nth step bearing surface, the thickness from the center of each step bearing surface to the second extension surface is consistent in the direction perpendicular to the first step bearing surface, and the heat dissipation of the corresponding position of each step bearing surface is relatively uniform.
Furthermore, for each of the first step bearing surface to the nth step bearing surface, the thickness from the center of each step bearing surface to the second extension surface is 2mm to 3mm in the direction perpendicular to the first step bearing surface. The thickness from the center of the step bearing surface to the second extension surface is more than or equal to 2mm, so that the serious deformation of the heat sink in the processing and manufacturing process is avoided, and the excessive deformation of the heat sink due to heat absorption in the working process is avoided; the thickness from the center of the step bearing surface to the second extension surface is less than or equal to 3mm, so that the heat sink can be well miniaturized and lightened.
The preparation method of the heat sink provided by the technical scheme of the invention comprises the steps of providing an initial heat sink, wherein the initial heat sink is provided with a first initial surface and a second initial surface which are opposite; machining the first initial surface, and machining the second initial surface to enable the initial heat sink to form a heat sink, enable the first initial surface to form a first surface of the heat sink, and enable the second initial surface to form a second extending surface of the heat sink; the first surface comprises a first step bearing surface and an Nth step bearing surface, the kth step bearing surface is adjacent to the (k + 1) th step bearing surface, the height from the first step bearing surface to the height from the Nth step bearing surface is sequentially increased, the height from a second extending surface at the bottom of the first step bearing surface to the height from the second extending surface at the bottom of the Nth step bearing surface is sequentially increased, N is an integer greater than or equal to 2, and k is an integer greater than or equal to 1 and less than or equal to N-1. Therefore, the second extension surface is inclined, the inclined direction of the second extension surface is approximately close to the arrangement direction from the first step bearing surface to the Nth step bearing surface, the thickness from each step bearing surface to the second extension surface can be reduced, the whole thickness of the heat sink is reduced, and the miniaturization and the light weight of the heat sink are realized.
The semiconductor laser system provided by the technical scheme of the invention comprises the heat sink; and the laser chips are respectively positioned on the first step bearing surface to the Nth step bearing surface. The whole thickness of the heat sink is reduced, so that the miniaturization and the light weight of the heat sink are realized, and the miniaturization and the light weight of the semiconductor laser system are realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a heat sink in an embodiment of the invention;
FIG. 2 is a flow chart of heat sink fabrication in another embodiment of the present invention;
fig. 3 is a schematic diagram of a semiconductor laser system in accordance with another embodiment of the present invention;
fig. 4 is a schematic diagram of a semiconductor laser system according to another embodiment of the present invention.
Detailed Description
An embodiment of the present invention provides a heat sink, and referring to fig. 1, the heat sink 10 has a first surface and a second extending surface 120 opposite to each other, the first surface includes a first step bearing surface 101 to an nth step bearing surface, a kth step bearing surface is adjacent to a kth +1 th step bearing surface, heights of the first step bearing surface 101 to the nth step bearing surface sequentially increase, a height of the second extending surface 120 at a bottom of the first step bearing surface 101 to a height of the second extending surface 120 at a bottom of the nth step bearing surface sequentially increase, N is an integer greater than or equal to 2, and k is an integer greater than or equal to 1 and less than or equal to N-1.
The material of the heat sink 10 comprises copper or aluminum alloy, so that the heat conduction capability of the heat sink 10 is better.
In the present embodiment, N is equal to 10 as an example. In other embodiments, N may be an integer less than 10 or greater than 10.
In this embodiment, the first surface includes a first step bearing surface 101, a second step bearing surface 102, a third step bearing surface 103, a fourth step bearing surface 104, a fifth step bearing surface 105, a sixth step bearing surface 106, a seventh step bearing surface 107, an eighth step bearing surface 108, a ninth step bearing surface 109 and a tenth step bearing surface 1010, and each step bearing surface is suitable for bearing a laser chip.
Specifically, in the present embodiment, the first step bearing surface 101, the second step bearing surface 102, the third step bearing surface 103, the fourth step bearing surface 104, the fifth step bearing surface 105, the sixth step bearing surface 106, the seventh step bearing surface 107, the eighth step bearing surface 108, the ninth step bearing surface 109 and the tenth step bearing surface 1010 are parallel to each other.
In this embodiment, the first surface includes a plurality of step-shaped bearing surfaces, so that the first surface is stepped and each step-shaped bearing surface is discontinuous.
In this embodiment, the first step bearing surface to the nth step bearing surface are kept horizontal.
A first acute angle is formed between the arrangement direction (X direction) from the first step bearing surface 101 to the nth step bearing surface and each step bearing surface. Specifically, a first acute included angle is formed between the arrangement direction from the first step bearing surface to the Nth step bearing surface and the first step bearing surface. The arrangement direction from the first step bearing surface 101 to the nth step bearing surface refers to the arrangement direction from the center of the first step bearing surface 101 to the center of the nth step bearing surface, in this embodiment, the center of the first step bearing surface 101 to the center of the tenth step bearing surface 1010 are arranged along the X direction. In this embodiment, the arrangement directions of the adjacent step bearing surfaces are all parallel to the X direction.
The second extending surface 120 and each step bearing surface form a second acute included angle. Specifically, a second acute included angle is formed between the second extending surface 120 and the first step bearing surface.
In this embodiment, a difference between the second acute angle included angle and the first acute angle included angle is less than or equal to 1 degree, so that the heat dissipation of the corresponding position of each step bearing surface is better in the process of realizing miniaturization and light weight, and the heat dissipation difference of the corresponding position of each step bearing surface is avoided from being larger.
In a specific embodiment, the second acute included angle is equal to the first acute included angle, so that heat dissipation of the corresponding position of each step bearing surface is uniform.
In a particular embodiment, the first acute included angle is between 2.86 degrees and 4.57 degrees, such as 2.86 degrees, 2.9 degrees, 3.0 degrees, 3.1 degrees, 3.2 degrees, 3.3 degrees, 3.4 degrees, 3.5 degrees, 3.6 degrees, 3.7 degrees, 3.8 degrees, 3.9 degrees, 4.0 degrees, 4.1 degrees, 4.2 degrees, 4.3 degrees, 4.4 degrees, 4.5 degrees, or 4.57 degrees.
In a particular embodiment, the second acute included angle is 2.86 degrees to 6 degrees, such as 2.86 degrees, 2.9 degrees, 3.0 degrees, 3.1 degrees, 3.2 degrees, 3.3 degrees, 3.4 degrees, 3.5 degrees, 3.6 degrees, 3.7 degrees, 3.8 degrees, 3.9 degrees, 4.0 degrees, 4.1 degrees, 4.2 degrees, 4.3 degrees, 4.4 degrees, 4.5 degrees, or 4.57 degrees, 4.6 degrees, 4.7 degrees, 4.8 degrees, 4.9 degrees, 5.0 degrees, 5.3 degrees, 5.5 degrees, 5.8 degrees, or 6 degrees.
In this embodiment, for each of the first to nth step bearing surfaces, the thickness from the center of each step bearing surface to the second extension surface is the same in the direction perpendicular to the first step bearing surface. Specifically, in a direction perpendicular to the first step bearing surface, the thickness from the first step bearing surface 101 to the second extension surface 120, the thickness from the second step bearing surface 102 to the second extension surface 120, the thickness from the third step bearing surface 103 to the second extension surface 120, the thickness from the fourth step bearing surface 104 to the second extension surface 120, the thickness from the fifth step bearing surface 105 to the second extension surface 120, the thickness from the sixth step bearing surface 106 to the second extension surface 120, the thickness from the seventh step bearing surface 107 to the second extension surface 120, the thickness from the eighth step bearing surface 108 to the second extension surface 120, the thickness from the ninth step bearing surface 109 to the second extension surface 120, and the thickness from the tenth step bearing surface 1010 to the second extension surface 120 are all the same. Therefore, the heat dissipation at the corresponding position of each step bearing surface is more uniform.
In other embodiments, the thickness of the center of each step bearing surface to the second extension surface varies partially or entirely.
In this embodiment, for each of the first step bearing surface to the nth step bearing surface, the thickness from the center of each step bearing surface to the second extension surface in the direction perpendicular to the first step bearing surface is 2mm to 3mm, such as 2mm, 2.2mm, 2.5mm, 2.8mm, or 3 mm. Has the advantages that: the thickness from the center of the step bearing surface to the second extension surface is more than or equal to 2mm, so that the serious deformation of the heat sink in the processing and manufacturing process is avoided, and the excessive deformation of the heat sink due to heat absorption in the working process is avoided; the thickness from the center of the step bearing surface to the second extension surface is less than or equal to 3mm, so that the heat sink can be well miniaturized and lightened.
The heat sink of the present embodiment overturns the conventional heat sink structure, and the second extension surface 120 of the heat sink of the present embodiment adopts an inclined surface, which can reduce the weight of the heat sink by more than 50%.
The invention also provides a preparation method of the heat sink, which is used for forming the heat sink and comprises the following steps with reference to fig. 2:
s01: providing an initial heat sink having opposing first and second initial faces;
s02: machining the first initial surface, and machining the second initial surface to enable the initial heat sink to form a heat sink, enable the first initial surface to form a first surface of the heat sink, and enable the second initial surface to form a second extending surface of the heat sink; the first surface comprises a first step bearing surface and an Nth step bearing surface, the kth step bearing surface is adjacent to the (k + 1) th step bearing surface, the height from the first step bearing surface to the height from the Nth step bearing surface is sequentially increased, the height from a second extending surface at the bottom of the first step bearing surface to the height from the second extending surface at the bottom of the Nth step bearing surface is sequentially increased, N is an integer greater than or equal to 2, and k is an integer greater than or equal to 1 and less than or equal to N-1.
The machining process of the first initial surface comprises milling and grinding; and the processes for machining the second initial surface comprise milling and grinding.
Detailed description of the formed heatsink the foregoing embodiments are described.
Another embodiment of the present invention also provides a semiconductor laser system, referring to fig. 3, including:
the heat sink described above (refer to fig. 1);
the plurality of laser chips 200 are respectively located on the first step bearing surface 101 to the nth step bearing surface.
Specifically, the plurality of laser chips 200 are respectively disposed on the first step bearing surface 101, the second step bearing surface 102, the third step bearing surface 103, the fourth step bearing surface 104, the fifth step bearing surface 105, the sixth step bearing surface 106, the seventh step bearing surface 107, the eighth step bearing surface 108, the ninth step bearing surface 109, and the tenth step bearing surface 1010.
The laser chip comprises a single-tube laser, the single-tube laser is an edge-emitting laser, laser beams emitted by the edge-emitting laser are parallel to the bearing surfaces of the steps, and the laser beams emitted by the edge-emitting laser are perpendicular to the arrangement direction from the first step bearing surface 101 to the Nth step bearing surface.
The fast axis direction of the laser beam is the L direction in fig. 3, and the slow axis direction of the laser beam is the Q direction in fig. 3.
The first acute included angle is selected in the sense that: if the first acute included angle is smaller than 2.86 degrees, the distance between the adjacent laser chips 200 is too large, which is not beneficial to the light weight of the semiconductor laser system; if so; if the first acute included angle is greater than 4.57 degrees, the distance between the adjacent laser chips 200 is too small, which is not favorable for heat dissipation of the semiconductor laser system.
Referring to fig. 4, the semiconductor laser system includes: a plurality of laser chips 200; the plurality of collimating mirrors includes a plurality of slow axis collimating mirrors 210 and a plurality of fast axis collimating mirrors 211. The fast axis collimator 211 is located between the semiconductor laser chip 200 and the slow axis collimator 210. A number of first 45 ° mirrors 220, the first 45 ° mirrors 220 being adapted to reflect the laser light after being collimated by the slow axis collimator 210 and the fast axis collimator 211 towards the polarizing prism 230.
The semiconductor laser system further includes: a second mirror 250; a grating 240; a fast axis coupling mirror 260; a slow-axis coupling mirror 270; the fast axis coupling mirror 260 is located between the slow axis coupling mirror 270 and the second mirror 250. The light emitted from the polarizing prism 230 enters the grating 240, and the light emitted from the grating 240 is reflected by the second mirror 250 and then enters toward the fast axis coupling mirror 260.
The semiconductor laser system provided by the embodiment comprises the heat sink; and the laser chips are respectively positioned on the first step bearing surface to the Nth step bearing surface. The whole thickness of the heat sink is reduced, so that the miniaturization and the light weight of the heat sink are realized, and the miniaturization and the light weight of the semiconductor laser system are realized.
The single-tube laser in the embodiment is a high-power semiconductor laser, the power output of the semiconductor laser system is more than 200W, the weight of the semiconductor laser system is 150g, the thickness of the semiconductor laser system is 11.5mm, the volume of the semiconductor laser system is effectively reduced, and the output power of the semiconductor laser system is 1.3W/g. Whereas the output power of a semiconductor laser system of conventional construction is about 0.7W/g.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A heat sink is characterized in that the heat sink is provided with a first surface and a second extending surface which are opposite, the first surface comprises a first step bearing surface and an Nth step bearing surface, the kth step bearing surface is adjacent to the kth +1 step bearing surface, the height from the first step bearing surface to the height from the Nth step bearing surface is sequentially increased, the height from the second extending surface at the bottom of the first step bearing surface to the height from the second extending surface at the bottom of the Nth step bearing surface is sequentially increased, N is an integer larger than or equal to 2, and k is an integer larger than or equal to 1 and smaller than or equal to N-1.
2. The heat sink of claim 1, wherein a first step bearing surface to an nth step bearing surface are parallel to each other, and a first acute included angle is formed between the arrangement direction of the first step bearing surface to the nth step bearing surface and the first step bearing surface; a second acute included angle is formed between the second extension surface and the first step bearing surface; the difference between the second acute included angle and the first acute included angle is less than or equal to 1 degree.
3. The heat sink of claim 2, wherein the second acute included angle is equal to the first acute included angle.
4. A heat sink according to claim 2 or 3, wherein said first acute included angle is between 2.86 and 4.57 degrees.
5. A heat sink according to claim 2 or 3, wherein said second acute included angle is 2.86 to 6 degrees.
6. The heat sink of claim 1, wherein for each of the first through nth step bearing surfaces, the thickness of each step bearing surface from the center to the second extension surface is uniform in a direction perpendicular to the first step bearing surface.
7. The heat sink of claim 1 or 6, wherein for each of the first step bearing surface to the nth step bearing surface, the thickness from the center of each step bearing surface to the second extension surface in the direction perpendicular to the first step bearing surface is 2mm to 3 mm.
8. A heat sink in accordance with claim 1, wherein the material of said heat sink comprises copper, or an aluminum alloy.
9. A method of manufacturing a heatsink according to any one of claims 1 to 8, comprising:
providing an initial heat sink having opposing first and second initial faces;
machining the first initial surface, and machining the second initial surface to enable the initial heat sink to form a heat sink, enable the first initial surface to form a first surface of the heat sink, and enable the second initial surface to form a second extending surface of the heat sink; the first surface comprises a first step bearing surface and an Nth step bearing surface, the kth step bearing surface is adjacent to the (k + 1) th step bearing surface, the height from the first step bearing surface to the height from the Nth step bearing surface is sequentially increased, the height from a second extending surface at the bottom of the first step bearing surface to the height from the second extending surface at the bottom of the Nth step bearing surface is sequentially increased, N is an integer greater than or equal to 2, and k is an integer greater than or equal to 1 and less than or equal to N-1.
10. A semiconductor laser system, comprising:
the heat sink of any of claims 1 to 8;
and the laser chips are respectively positioned on the first step bearing surface to the Nth step bearing surface.
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| CN202110385325.6A CN113131333A (en) | 2021-04-09 | 2021-04-09 | Heat sink, preparation method thereof and semiconductor laser system |
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| CN202110385325.6A CN113131333A (en) | 2021-04-09 | 2021-04-09 | Heat sink, preparation method thereof and semiconductor laser system |
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| CN101859025A (en) * | 2010-06-03 | 2010-10-13 | 中国科学院长春光学精密机械与物理研究所 | High-power semiconductor laser optical output module capable of being reused |
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| WO2014190975A1 (en) * | 2013-05-28 | 2014-12-04 | Lumics Gmbh | Diode laser |
| CN204615151U (en) * | 2015-05-18 | 2015-09-02 | 浙江合波光学科技有限公司 | The high-power optical fiber coupled semiconductor laser of a kind of many single tubes |
| CN112310801A (en) * | 2020-11-09 | 2021-02-02 | 中国工程物理研究院应用电子学研究所 | Phase-change cooling semiconductor laser device |
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2021
- 2021-04-09 CN CN202110385325.6A patent/CN113131333A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859025A (en) * | 2010-06-03 | 2010-10-13 | 中国科学院长春光学精密机械与物理研究所 | High-power semiconductor laser optical output module capable of being reused |
| US20130148684A1 (en) * | 2011-12-07 | 2013-06-13 | Jds Uniphase Corporation | High-brightness spatial-multiplexed multi-emitter pump with tilted collimated beam |
| CN202888604U (en) * | 2012-08-06 | 2013-04-17 | 北京大族天成半导体技术有限公司 | Semiconductor laser device |
| WO2014190975A1 (en) * | 2013-05-28 | 2014-12-04 | Lumics Gmbh | Diode laser |
| CN204615151U (en) * | 2015-05-18 | 2015-09-02 | 浙江合波光学科技有限公司 | The high-power optical fiber coupled semiconductor laser of a kind of many single tubes |
| CN112310801A (en) * | 2020-11-09 | 2021-02-02 | 中国工程物理研究院应用电子学研究所 | Phase-change cooling semiconductor laser device |
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