CN113129979B - Memory device and method for updating memory device - Google Patents
Memory device and method for updating memory device Download PDFInfo
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- CN113129979B CN113129979B CN202011625514.8A CN202011625514A CN113129979B CN 113129979 B CN113129979 B CN 113129979B CN 202011625514 A CN202011625514 A CN 202011625514A CN 113129979 B CN113129979 B CN 113129979B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40622—Partial refresh of memory arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
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Abstract
The invention provides a memory device. The memory device includes a memory cell and a control circuit. The memory unit includes a plurality of banks. The control circuit is configured to divide the memory bank into at least a first group and a second group, and sequentially perform a first update operation on the first group and the second group. When the control circuit performs a first update operation on one of the first group and the second group, the control circuit performs a second update operation on a victim row of the other of the first group and the second group. In addition, the invention also provides a method for updating the memory device.
Description
Technical Field
The present invention relates to a memory device and a method for operating a memory device, and more particularly, to a volatile memory device and a method for updating a volatile memory device.
Background
Row hammer (row hammer) is an unexpected and undesirable side effect in dynamic random access memory (dynamic random access memory, DRAM). When one of the rows in the DRAM is repeatedly accessed over a period of time, the accessed memory cells interact with the non-accessed memory cells on the adjacent row (also known as the victim row), causing leakage of charge from the non-accessed memory cells on the adjacent row and even the data stored in the victim row to be lost. To prevent the row hammer effect, one common approach is to update the victim row more frequently. For example, row hammer circuitry to identify the victim row is utilized to update the victim row more frequently. However, in the standard specification of DDR3/DDR4, there are no conventional external commands to update the victim row. That is, the victim row update needs to be a hidden operation for the user.
Disclosure of Invention
In view of the above, the present invention provides a memory device and a method for refreshing the memory device. Wherein the victim row update operation is hidden in the normal update operation without affecting the time allocated for the normal update operation.
In one embodiment of the present invention, a memory device is provided that includes memory cells and a control circuit. The memory unit includes a plurality of banks. The control circuit is coupled to the memory cell. The control circuit is configured to divide the plurality of memory banks into at least a first group and a second group, and sequentially perform a first update operation on the first group and the second group. While the control circuit is performing a first update operation on one of the first group and the second group, the control circuit is performing a second update operation on a victim row of the other of the first group and the second group. Wherein the time required to perform the second update operation on the victim row of the other of the first group and the second group is less than the time required to perform the first update operation on the one of the first group and the second group.
In one embodiment of the present invention, a method for updating a memory device including a plurality of banks is provided. The method comprises the following steps: dividing a plurality of memory banks into at least a first group and a second group; performing a first update operation on one of the first group and the second group; and during the first update operation performed on one of the first group and the second group, performing a second update operation on a victim row of the other of the first group and the second group. Wherein the time required to perform the second update operation on the victim row of the other of the first group and the second group is less than the time required to perform the first update operation on the one of the first group and the second group.
In order to make the above features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and, together with the description, serve to explain the principles of the invention.
FIG. 1 is a schematic diagram of a memory device according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a memory cell according to the embodiment of FIG. 1;
FIG. 3 is a waveform diagram illustrating a memory bank performing a first refresh operation and a second refresh operation according to an embodiment of the present invention;
FIG. 4 is a waveform diagram illustrating signals of a memory bank performing a first refresh operation and a second refresh operation according to another embodiment of the present invention;
FIG. 5 is a waveform diagram illustrating signals of a memory bank performing a first refresh operation and a second refresh operation according to another embodiment of the present invention;
FIG. 6 is a waveform diagram illustrating signals of a memory bank performing a first refresh operation and a second refresh operation according to another embodiment of the present invention;
FIG. 7 is a waveform diagram illustrating signals of a memory bank performing a first refresh operation and a second refresh operation according to another embodiment of the present invention;
FIG. 8 is a flow chart of a method for refreshing a memory device according to an embodiment of the invention.
Detailed Description
The following examples are provided to describe the present invention in detail, but the scope of the present invention is not limited to the provided examples, and the provided examples may be appropriately combined to constitute other modifications of the present invention. The term "coupled" as used in this specification (including the claims) may mean any direct or indirect connection. For example, "a first device coupled to a second device" should be interpreted as "the first device is directly connected to the second device" or "the first device is indirectly connected to the second device through other devices or connecting members. Furthermore, the term "signal" may refer to current, voltage, charge, temperature, data, electromagnetic waves, or any one or more signals.
FIG. 1 is a schematic diagram of a memory device according to an embodiment of the invention. FIG. 2 is a schematic diagram of the memory cell depicted in FIG. 1. Referring to fig. 1 and 2, a memory device 100 according to an embodiment of the present invention includes a memory cell 110 and a control circuit 120. The memory cell 110 includes a plurality of banks 112_0 through 112_7. In the present embodiment, for example, eight banks (memory banks) are shown in fig. 2, but the present invention is not limited thereto.
Memory cell 110 is coupled to control circuit 120. The control circuit 120 is configured to perform a first refresh operation and a second refresh operation on the memory cell 110. In one embodiment, the control circuit 120 may be a memory controller. The memory controller may be implemented by a central processing unit (Central Processing Unit, CPU), microprocessor, digital signal processor (Digital Signal Processor, DSP), programmable controller, programmable logic device (Programmable Logic Device, PLD) or other similar means or a combination thereof, the invention is not particularly limited.
In an embodiment of the present invention, the first update operation may be a normal update operation performed on the memory bank, and the second update operation may be a victim row update operation performed on at least one victim row of the memory bank. The number of rows updated in the first update operation is greater than the number of rows updated in the second update operation. In FIG. 2, memory bank 112_0 has victim row 114_0, memory bank 112_1 has victim row 114_1, memory bank 112_2 has victim row 114_2, memory bank 112_3 has victim row 114_3, memory bank 112_4 has victim row 114_4, memory bank 112_5 has victim row 114_5, memory bank 112_6 has victim row 114_6, and memory bank 112_7 has victim row 114_7, although the invention is not limited thereto. The victim row may be located in any of banks 112_0 through 112_7 and the address location of the victim row (or determining which bank or banks there are victim rows) may be accomplished using any existing method or circuit, and the invention is not particularly limited. In addition, the present invention also does not limit the number of victim rows for each bank, and the locations of the victim rows to the banks. In embodiments of the present invention, the victim row update operation (i.e., the second update operation) is hidden without affecting the frequency of the normal update operation (i.e., the first update operation) or the time allocated to the normal update operation for each update command.
Specifically, fig. 3 is a waveform diagram of a memory bank performing a first update operation and a second update operation according to an embodiment of the present invention. In this embodiment, the victim column is located in memory banks 112_0 and 112_1. In a first refresh operation, the control circuit 120 divides the memory banks 112_0 to 112_7 into at least a first group A and a second group B. For example, the first group A includes even numbered banks 112_0, 112_2, 112_4, and 112_6, and the second group B includes odd numbered banks 112_1, 112_3, 112_5, and 112_7. In detail, the control circuit 120 may further divide the first group a into a first subgroup A1 and a second subgroup A2. The first subgroup A1 includes a bank 112_0 and a bank 112_4, and the second subgroup A2 includes a bank 112_2 and a bank 112_6. The control circuit 120 may further divide the second group B into a third subgroup B1 and a fourth subgroup B2. The third subgroup B1 includes the bank 112_1 and the bank 112_5, and the fourth subgroup B2 includes the bank 112_3 and the bank 112_7. Furthermore, the number of groups, the number of subgroups, and the memory banks included in each group and each subgroup described above are merely illustrative, and the present invention is not limited thereto.
In the embodiment of the present invention, each group is further divided into two subgroups during the first refresh operation, wherein the subgroups start the first refresh operation at different times. As shown in fig. 3, in the first update operation, each rising edge (rising edge) is represented as a time when a corresponding bank is started for the first update operation. In the first refresh operation, four rising edges of the corresponding first sub-group A1, second sub-group A2, third sub-group B1 and fourth sub-group B2 are staggered from each other. Each falling edge (falling edge) represents a time at which the corresponding bank is precharged or a time at which the first update operation of the corresponding bank is terminated. The control circuit 120 sequentially performs a first update operation on the first subgroup A1, the second subgroup A2, the third subgroup B1 and the fourth subgroup B2 in the embodiment of the present invention.
When the control circuit 120 performs a first update operation on the first group a during the period T1, the control circuit 120 performs a second update operation on the victim row of the second group B (e.g., the victim row 114_1 of fig. 2) during the same period T1. Next, when the control circuit 120 performs a first update operation on the second group B during the period T2, the control circuit 120 performs a second update operation on the victim row of the first group a (e.g., the victim row 114_0 of fig. 2) during the same period T2. That is, when the control circuit 120 performs a first update operation on one of the first group a and the second group B, the control circuit 120 performs a second update operation on the victim row of the other of the first group a and the second group B. In the present embodiment, in the second refresh operation, the rising edge corresponding to the first subgroup A1 and the rising edge corresponding to the victim row of the second group B are staggered with each other. For example, the rising edge of the victim row corresponding to the second group B is later than the rising edge corresponding to the first subgroup A1. In this way, the start-up time of the first group a to perform the first refresh operation is earlier than the start-up time of the victim row of the second group B to perform the second refresh operation. And, the end time of the victim row of the second group B to complete the second update operation is earlier than the end time of the first group a to complete the first update operation. That is, the time required for the victim row of the second group B to perform the second update operation is less than the time required for the first group a to perform the first update operation.
In addition, after the control circuit 120 performs the first refresh operation on the first group a, the control circuit 120 performs the second refresh operation on the victim row of the first group a after the row precharge time tRP. The row precharge time tRP is the time that the bank is available for subsequent row starts or updates after precharging the bank. On the other hand, after the control circuit 120 performs the second refresh operation on the victim row of the second group B, the control circuit 120 performs the first refresh operation on the second group B after the row precharge time tRP. That is, in order to meet the row precharge time tRP requirement, it may be necessary to defer the first update operation for the second group B or the second update operation for the first group a.
FIG. 4 is a waveform diagram of signals for performing a first refresh operation and a second refresh operation in a memory bank according to another embodiment of the present invention. In this embodiment, the victim row is located in the first subgroup A1. Referring to fig. 2 and 4, the control circuit 120 sequentially performs a first update operation on the first subgroup A1, the second subgroup A2, the third subgroup B1 and the fourth subgroup B2 in the embodiment of the present invention. The victim row is positioned in the first subgroup A1. In this embodiment, as shown in FIG. 2, the victim column 114_0 exists in the memory bank 112_0. After the control circuit 120 performs the first refresh operation on the first subgroup A1, the control circuit 120 performs a second refresh operation on the victim row of the first subgroup A1 (e.g., bank 112_0 or bank 112_4) after the row precharge time tRP.
In another embodiment, the order of the first update operations for the first subgroup A1 and the second subgroup A2 may be changed. FIG. 5 is a waveform diagram of signals for performing a first refresh operation and a second refresh operation in a memory bank according to another embodiment of the present invention. In this embodiment, the victim row is located in the second subgroup A2. The control circuit 120 sequentially performs a first update operation on the second subgroup A2, the first subgroup A1, the third subgroup B1, and the fourth subgroup B2. After the control circuit 120 performs the first refresh operation on the second subgroup A2, the control circuit 120 performs the second refresh operation on the victim row of the second subgroup A2 after the row precharge time tRP.
FIG. 6 is a waveform diagram of signals for performing a first refresh operation and a second refresh operation in a memory bank according to another embodiment of the present invention. In this embodiment, the victim row is located in the third subgroup B1. The control circuit 120 sequentially performs a first update operation on the first subgroup A1, the second subgroup A2, the fourth subgroup B2, and the third subgroup B1. During the period in which the control circuit 120 performs the first refresh operation on the first group a, the control circuit 120 performs the second refresh operation on the victim row of the third subgroup B1. When the second refresh operation performed by the control circuit 120 on the victim row of the third subgroup B1 ends, the control circuit 120 performs the first refresh operation on the third subgroup B1 after the row precharge time tRP.
FIG. 7 is a waveform diagram of signals for performing a first refresh operation and a second refresh operation in a memory bank according to another embodiment of the present invention. The victim row is positioned in the fourth subgroup B2. The control circuit 120 sequentially performs a first update operation on the first subgroup A1, the second subgroup A2, the third subgroup B1, and the fourth subgroup B2. During the time that the control circuit 120 performs the first refresh operation on the first group a, the control circuit 120 performs the second refresh operation on the victim row of the fourth subgroup B2. When the second refresh operation performed by the control circuit 120 on the victim row of the fourth subgroup B2 ends, the control circuit 120 performs the first refresh operation on the fourth subgroup B2 after the row precharge time tRP.
FIG. 8 is a flow chart of a method for updating a memory device according to an embodiment of the invention. Referring to fig. 1, 2 and 8, the method for updating the memory device according to the embodiment of the present invention is at least applicable to the memory device 100 of fig. 1 and 2, but the present invention is not limited thereto. Taking the memory device 100 of fig. 1 and 2 as an example, in step S100, the control circuit 120 divides the memory bank into at least a first group a and a second group B. In step S110, the control circuit 120 performs a first update operation on one of the first group a and the second group B (e.g., the first group a). In an embodiment of the present invention, the control circuit 120 performs the first update operation according to the automatic update command. In step S120, during the first update operation performed on the first group a, the control circuit 120 performs a second update operation on the victim row of the other of the first group a and the second group B (e.g., the second group B). And, the victim row of the second group B requires less time to perform the second update operation than the first group a. In addition, sufficient teaching, advice and implementation description of the method of the memory device of the embodiment of the present invention can be obtained from the foregoing embodiments of fig. 1 to 7, and thus, the related description thereof will not be repeated hereinafter.
In summary, in the embodiment of the invention, the memory bank is divided into a plurality of groups to sequentially perform the first update operation. If the victim row is located in a bank in the first group, a second update operation is performed on the victim row of the bank in the first group during the first update operation on the second group. If the victim row is located in a bank in the second group, a second update operation is performed on the victim row of the bank in the second group during the first update operation on the first group. Thus, the second update operation is hidden without affecting the frequency of the first update operation or the time allocated to a normal update for each update command.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (17)
1. A memory device, comprising:
a memory unit including a plurality of banks; and
a control circuit coupled to the memory cells, the control circuit configured to divide the plurality of memory banks into at least a first group and a second group, and sequentially perform a normal refresh operation on the first group and the second group,
wherein during the time that the control circuit performs the normal update operation on one of the first group and the second group, the control circuit performs a victim row update operation on a victim row of the other of the first group and the second group,
wherein the time allocated to performing the victim row update operation on the victim row of the other of the first group and the second group is less than the time allocated to performing the normal update operation on the one of the first group and the second group,
wherein the victim row update operation is hidden without affecting the frequency of the normal update operation or the time allocated to the normal update operation for each update command.
2. The memory device of claim 1, wherein during the time that the control circuit performs the normal refresh operation on the first group in accordance with an automatic refresh command, the control circuit performs the victim row refresh operation on the victim row of the second group, and a start-up time for performing the normal refresh operation on the first group is earlier than a start-up time for performing the victim row refresh operation on the victim row of the second group.
3. The memory device of claim 2, wherein at the conclusion of the normal refresh operation performed by the control circuit on the first group, the control circuit performs the victim row refresh operation on the victim row of the first group after a row precharge time.
4. The memory device of claim 3 wherein the first group is divided into at least a first subgroup and a second subgroup, and at the end of the normal refresh operation performed by the control circuit on the first subgroup, the control circuit performs the victim row refresh operation on the victim row of the first subgroup after the row precharge time.
5. The memory device of claim 4, wherein the control circuit performs the normal refresh operation on the first subgroup and the second subgroup sequentially.
6. The memory device of claim 3 wherein the first group is divided into at least a first subgroup and a second subgroup, and at the end of the normal refresh operation performed by the control circuit on the second subgroup, the control circuit performs the victim row refresh operation on the victim row of the second subgroup after the row precharge time.
7. The memory device of claim 6, wherein the control circuit performs the normal refresh operation on the second subgroup and the first subgroup sequentially.
8. The memory device of claim 1, wherein when the control circuit performs the normal update operation on the second group in accordance with an automatic update command, the control circuit performs the victim row update operation on the victim row of the first group, and a start-up time for performing the normal update operation on the second group is earlier than a start-up time for performing the victim row update operation on the victim row of the first group.
9. The memory device of claim 8, wherein at the end of the victim row update operation performed by the control circuitry on the victim row of the second group, the control circuitry performs the normal update operation on the second group after a row precharge time.
10. The memory device of claim 9, wherein the second group is divided into at least a third subgroup and a fourth subgroup, and at the end of the victim row update operation performed by the control circuitry on the victim row of the fourth subgroup, the control circuitry performs the normal update operation on the fourth subgroup after the row precharge time.
11. The memory device of claim 10, wherein the control circuit performs the normal refresh operation on the third subgroup and the fourth subgroup sequentially.
12. The memory device of claim 9, wherein the second group is divided into at least a third subgroup and a fourth subgroup, and at the end of the victim row update operation performed by the control circuitry on the victim row of the third subgroup, the control circuitry performs the normal update operation on the third subgroup after the row precharge time.
13. The memory device of claim 12, wherein the control circuit performs the normal refresh operation on the fourth subgroup and the third subgroup sequentially.
14. A method for updating a memory device, wherein the memory device comprises a plurality of banks, the method comprising:
dividing the plurality of banks into at least a first group and a second group;
performing a normal update operation on one of the first group and the second group; and
during the normal update operation performed on one of the first group and the second group, performing a victim row update operation on a victim row of the other of the first group and the second group,
wherein the time allocated to performing the victim row update operation on the victim row of the other of the first group and the second group is less than the time allocated to performing the normal update operation on the one of the first group and the second group,
wherein the victim row update operation is hidden without affecting the frequency of the normal update operation or the time allocated to the normal update operation for each update command.
15. The method of updating a memory device of claim 14, wherein after the normal update operation is performed on one of the first group and the second group in accordance with an automatic update command, the victim row of the other of the first group and the second group is performed after a row precharge time, and a start time of the normal update operation is performed on one of the first group and the second group is earlier than a start time of the victim row update operation is performed on the victim row of the other of the first group and the second group.
16. The method of updating a memory device of claim 15, wherein dividing the memory bank into at least the first group and the second group further comprises dividing the first group into at least a first subgroup and a second subgroup, and wherein the victim row update operation is performed on the victim row of either of the first subgroup and the second subgroup after the row precharge time at the end of the normal update operation performed on one of the first subgroup and the second subgroup.
17. The method of updating a memory device of claim 15, wherein dividing the memory bank into at least the first group and the second group further comprises dividing the second group into at least a third subgroup and a fourth subgroup, and wherein the normal update operation is performed on the one of the third subgroup and the fourth subgroup after the row precharge time at the end of the victim row update operation performed on the one of the third subgroup and the fourth subgroup.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/731,081 | 2019-12-31 | ||
| US16/731,081 US11238916B2 (en) | 2019-12-31 | 2019-12-31 | Method for refreshing a memory device, in which the victim row refresh operation is hidden in the normal refresh operation without affecting the time allocated for the normal refresh operation |
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| Publication Number | Publication Date |
|---|---|
| CN113129979A CN113129979A (en) | 2021-07-16 |
| CN113129979B true CN113129979B (en) | 2023-12-08 |
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| CN202011625514.8A Active CN113129979B (en) | 2019-12-31 | 2020-12-30 | Memory device and method for updating memory device |
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|---|---|
| US (1) | US11238916B2 (en) |
| CN (1) | CN113129979B (en) |
| TW (1) | TWI758024B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9741421B1 (en) * | 2016-04-05 | 2017-08-22 | Micron Technology, Inc. | Refresh circuitry |
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