CN113126414B - Optical scanning projection mechanism - Google Patents
Optical scanning projection mechanism Download PDFInfo
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- CN113126414B CN113126414B CN201911422691.3A CN201911422691A CN113126414B CN 113126414 B CN113126414 B CN 113126414B CN 201911422691 A CN201911422691 A CN 201911422691A CN 113126414 B CN113126414 B CN 113126414B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/28—Reflectors in projection beam
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/105—Scanning systems with one or more pivoting mirrors or galvano-mirrors
Abstract
The invention discloses an optical scanning projection mechanism, comprising: a light source for providing a light beam; the piezoelectric element comprises a fixed end and a movable end which are opposite, the direction from the fixed end to the movable end is a first direction, the piezoelectric element comprises at least one separated sub-piezoelectric element along the first direction, a plurality of sub-piezoelectric units are electrically isolated, and each sub-piezoelectric unit independently generates warpage under the power-on state; the fixed end of the piezoelectric element is fixed on the supporting block to form a cantilever structure; the reflecting structure is used for receiving the light beam and reflecting the light beam, and is positioned on the surface of the piezoelectric element or in the piezoelectric element; an electrical connection structure electrically connected to the sub-piezoelectric element and having an external signal connection terminal; and the optical carrier is used for receiving the reflected light beam of the reflecting structure.
Description
Technical Field
The invention relates to the technical field of projection display, in particular to an optical scanning projection mechanism.
Background
With the rise of AR (Augmented Reality), VR (Virtual Reality), MR (media Reality), video display devices for optical scanning projection are widely used in many fields such as education, entertainment, medical treatment, aviation, etc., and various manufacturers at home and abroad have successively introduced a plurality of projection devices, such as HoloLens2 by microsoft, project Morpheus by sony, etc.
Different from the traditional display technology, the optical scanning projection equipment has higher requirements on size, weight, power consumption, field angle and the like, and the current mechanical rotation scanning technology depends on mechanical rotation scanning and has the defects of low speed, high cost and poor reliability; the contradiction between coherent synthesis and channel crosstalk determined by the innate principle of the laser phased array scanning technology has the problems of large laser beam side lobe and low efficiency; the MEMS galvanometer scanning technique, as the mainstream direction of the all-solid-state laser radar, also has the limitation of the MEMS galvanometer method.
Therefore, an optical scanning projection mechanism is desired, which can reduce the volume occupied by the scanning projection device, increase the field of view of the projection device, and reduce the complexity of the process.
Disclosure of Invention
The invention aims to provide an optical scanning projection mechanism which can reduce the volume occupied by scanning projection equipment, increase the view field of the projection equipment and reduce the complexity of the process.
In order to achieve the above object, the present invention provides a method comprising:
a light source for providing a light beam;
the piezoelectric element comprises a fixed end and a movable end which are opposite, the direction from the fixed end to the movable end is a first direction, the piezoelectric element comprises at least one separated sub-piezoelectric element along the first direction, and each sub-piezoelectric unit is warped independently under the electrified state;
the fixed end of the piezoelectric element is fixed on the supporting block to form a cantilever structure;
the reflecting structure is used for receiving the light beam and reflecting the light beam and is positioned on the surface of the piezoelectric element or in the piezoelectric element;
an electrical connection structure electrically connected to the sub-piezoelectric element and having an external signal connection terminal;
and the optical carrier is used for receiving the reflected light beam of the reflecting structure.
Optionally, the sub-piezoelectric element includes:
a support layer;
the piezoelectric laminated structure is positioned on the support layer and at least comprises a layer of piezoelectric film and electrodes positioned on the upper surface and the lower surface of each layer of piezoelectric film, and the two adjacent layers of piezoelectric films share the electrode positioned between the two layers of piezoelectric films;
a passivation layer on the piezoelectric stack structure;
the electrodes are counted from bottom to top in sequence and are divided into odd-numbered layers of electrodes and even-numbered layers of electrodes;
the first electrode leading-out end is positioned on the top surface or the bottom surface of the piezoelectric element and is electrically connected with the even electrode layers;
and the second electrode leading-out end is positioned on the top surface or the bottom surface of the piezoelectric element and is electrically connected with the odd electrode layer.
Optionally, the passivation layer is light-permeable, the surface of the electrode is smooth, and the topmost electrode of the piezoelectric element serves as a reflective structure.
Optionally, the electrode is made of a light-reflecting material, the electrode is made of a metal, and the metal material includes gold, silver, aluminum, tungsten, nickel, or iron, and an alloy thereof.
Optionally, the material of the passivation layer includes silicon oxide.
Optionally, the reflective structure is a reflective layer with a specific micro-nano structure formed above the passivation layer, and the material of the reflective layer includes silicon nitride, silicon oxide, polysilicon, silicon oxynitride, aluminum, gold, and/or nickel.
Optionally, the reflecting structure is a mirror disposed at the movable end of the piezoelectric element.
Optionally, the reflective structure is located at least at the movable end of the piezoelectric element.
Optionally, the first electrode leading-out terminal and the second electrode leading-out terminal are both located on the top surface of the piezoelectric element and serve as the external signal connection terminal.
Optionally, different sub-piezoelectric elements share the same support layer.
Optionally, the thicknesses of the piezoelectric films of the different sub-piezoelectric elements are the same or different.
Optionally, the piezoelectric film materials of different sub-piezoelectric elements are the same or different.
Optionally, the material of the piezoelectric film includes quartz crystal, aluminum nitride, zinc oxide, lead zirconate titanate, barium titanate, lithium gallate, lithium germanate, or titanium germanate.
Optionally, when the number of the sub-piezoelectric elements is multiple, the sub-piezoelectric elements are electrically isolated from each other, and an insulating material layer or an air gap is provided between adjacent sub-piezoelectric elements.
Optionally, the optical carrier is a projection screen or an object to be scanned.
In summary, the optical scanning projection mechanism according to the embodiment of the present invention can realize optical scanning projection by the warpage characteristic of the piezoelectric element, occupies a smaller space than the conventional driving device, and can better meet the miniaturization requirement of the optical scanning projection apparatus; external components are not needed, and the structure is simplified; compared with an electrostatic driving method, the process is simple, and the driving force is large; the stability and the accuracy of the whole optical scanning projection equipment can be ensured, and meanwhile, the movable range of the reflection structure can be enlarged by the multi-section sub-piezoelectric elements, so that the self-adaptive adjustment of the reflection structure is realized, and the field angle is increased.
Drawings
FIG. 1 is a schematic structural diagram of a sub-piezoelectric element of an optical scanning projection mechanism according to an embodiment of the present invention.
Fig. 2 to 3 are schematic diagrams illustrating the operation principle and structure of an optical scanning projection mechanism according to an embodiment of the present invention.
Fig. 4 to 5 are schematic structural diagrams of sub-piezoelectric elements and a reflective structure of an optical scanning projection mechanism according to another embodiment of the present invention.
FIG. 6 is a schematic diagram of a sub-piezoelectric element of an optical scanning projection mechanism according to another embodiment of the present invention.
Fig. 7 to 9 are schematic diagrams illustrating the operation principle and structure of an optical scanning projection mechanism according to another embodiment of the present invention.
Description of reference numerals:
01-a light source; 02-piezoelectric element; 021-fixed end; 022-movable end; 023-a sub-piezoelectric element; 23A-sub piezoelectric element; 23B-sub piezoelectric element; a 23C-sub piezoelectric element; 03-a support block; 04-a reflective structure; 05-an optical carrier; 06-a supporting layer; 07-a piezoelectric film; 08-even layer electrodes; 09-odd layer electrodes; 081-first electrode lead-out; 091-second electrode lead-out; 010-a passivation layer; 011-a reflective layer; 012-mirror.
Detailed Description
The method for manufacturing the element bulk acoustic wave resonator according to the present invention will be described in further detail below with reference to the drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description and drawings, it being understood, however, that the concepts of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. The drawings are in a very simplified form and are not to scale, merely for convenience and clarity in describing embodiments of the invention.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relational terms such as "under," "below," "under," "above," "over," and the like may be used herein for convenience in describing the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
If the method herein comprises a series of steps, the order in which these steps are presented herein is not necessarily the only order in which these steps can be performed, and some steps may be omitted and/or some other steps not described herein may be added to the method. Although elements in one drawing may be readily identified as such in other drawings, the present disclosure does not identify each element as being identical to each other in every drawing for clarity of description.
The scanning projection equipment in the prior art mainly has two modes of electromagnetic driving and electrostatic driving, wherein the driving force of the electromagnetic driving mode is large, but external components (such as magnets and metal shielding structures) are required; although the electrostatic driving has high integration degree and strong controllability, the driving force is insufficient, and the electrode of the electrostatic driving is formed on the chip by integrally etching monocrystalline silicon, so that the process is complex.
Referring to fig. 2, fig. 2 is a schematic structural diagram of an optical scanning projection mechanism according to an embodiment of the present invention, including:
a light source 01 for providing a light beam;
a sheet-shaped piezoelectric element 02, wherein the piezoelectric element 02 comprises a fixed end 021 and a movable end 022 which are opposite, the direction from the fixed end 021 to the movable end 022 is a first direction, the piezoelectric element 02 comprises at least one separated sub-piezoelectric element 023 along the first direction, and each sub-piezoelectric element independently generates warpage in an electrified state;
the fixed end 021 of the piezoelectric element 02 is fixed on the supporting block 03 to form a cantilever structure;
a reflective structure 04 for receiving the light beam and reflecting the light beam, located on the surface of the piezoelectric element 02 or inside the piezoelectric element 02;
an electrical connection structure electrically connected to the sub-piezoelectric element 023 and having an external signal connection terminal;
an optical carrier 05 for receiving the reflected light beam of the reflective structure 04.
The light source 01 includes but is not limited to: laser, natural light, invisible light (such as infrared ray, ultraviolet ray) or electromagnetic wave, etc., according to different application scenarios, selecting the corresponding light source 01, reflecting structure 04 and optical carrier 05, for example, in a VR imaging device, selecting laser or natural light as the light source 01, selecting a mirror surface capable of reflecting laser or natural light as the reflecting structure 04, and selecting a projection screen as the optical carrier 05; for another example, in the scanning apparatus, an electromagnetic wave is selected as the light source 01, a material or a structure capable of reflecting the electromagnetic wave is selected as the reflecting structure 04, and the object to be scanned is the optical carrier 05.
In this embodiment, the light source is laser light or natural light for VR imaging.
The optical scanning projection mechanism will be described with reference to fig. 1 to 9. FIG. 1 is a schematic structural diagram of a sub-piezoelectric element of an optical scanning projection mechanism according to an embodiment of the present invention. Fig. 2 to 3 are schematic diagrams illustrating the operation principle and structure of an optical scanning projection mechanism according to an embodiment of the present invention. Fig. 4 to 5 are schematic structural diagrams of sub-piezoelectric elements and a reflective structure of an optical scanning projection mechanism according to another embodiment of the present invention. FIG. 6 is a schematic diagram of a sub-piezoelectric element of an optical scanning projection mechanism according to another embodiment of the present invention. Fig. 7 to 9 are schematic diagrams illustrating the operation principle and structure of an optical scanning projection mechanism according to another embodiment of the present invention.
In one embodiment, referring to fig. 1, the sub-piezoelectric element 023 includes:
a support layer 06;
a piezoelectric laminated structure located on the support layer 06, where the piezoelectric laminated structure includes at least one piezoelectric film 07 and electrodes located on the upper and lower surfaces of each piezoelectric film 07, and two adjacent piezoelectric films 07 share the electrode located therebetween;
a passivation layer 10 on the piezoelectric stack structure;
the electrodes are counted from bottom to top in sequence and are divided into odd-layer electrodes 09 and even-layer electrodes 08;
a first electrode lead-out terminal 081, which is located on the top surface or the bottom surface of the piezoelectric element 02 and is electrically connected to the even electrode layer;
and a second electrode lead-out terminal 091 positioned on the top surface or the bottom surface of the piezoelectric element 02 and electrically connected to the odd electrode layers.
Referring to fig. 2 and 3, when a voltage is applied to the first electrode terminal 081 and the second electrode terminal 091 of the external signal terminals, a voltage difference is generated between the odd-numbered layer electrodes 09 and the even-numbered layer electrodes 08 on the upper and lower surfaces of the piezoelectric film 07, so that the piezoelectric film 07 contracts, and the support layer 06 cannot stretch or contract, so that the sub-piezoelectric element 023 is warped upward or downward (the warping direction and warping degree depend on the voltages of the piezoelectric film 07 and the external signal terminals) after being energized, so that the piezoelectric element 02 is warped upward or downward as a whole.
In another embodiment, referring to fig. 1, the passivation layer 10 is transparent, the electrodes and the surface of the passivation layer 10 have sufficient flatness, and the topmost electrode of the piezoelectric element 02 serves as the reflective structure 04. In this way, directly regarding the surface of the electrode as a mirror surface, the light beam provided by the light source 01 passes through the transparent and smooth passivation layer 10 to irradiate on the electrode, and the electrode reflects the light beam to change the direction of the light beam, so that the light beam reaches the optical carrier 05 and moves in the area of the optical carrier 05 along with the warping of the piezoelectric element 02.
The optical carrier 05 is a projection screen or an object to be scanned.
When the optical carrier 05 is a projection screen, laser light or natural light emitted by the light source 01 falls within the area of the reflection structure 04, the laser light or natural light is reflected by the reflection structure 04 to the projection screen and forms an image, so as to realize projection, and the position of the pattern on the projection screen is adjusted by the piezoelectric element 02 through slight warping.
When the optical carrier 05 is an object to be scanned, a scanning ray or an electromagnetic wave of the light source 01 falls in the region of the reflection structure 04 and is reflected to the object to be scanned by the reflection structure 04, and the piezoelectric element 02 changes the direction of the scanning ray or the electromagnetic wave through slight warping so as to traverse the object to be scanned, thereby realizing scanning.
Generally, when a direct current is supplied to the odd-numbered layer electrodes 09 and the even-numbered layer electrodes 08, the piezoelectric element 02 is relatively stably warped, and is mostly used for realizing a projection function; when alternating current is supplied to the odd-numbered layer electrodes 09 and the even-numbered layer electrodes 08, the piezoelectric element 02 generates vibration of a certain frequency, and is mostly used for realizing a scanning function.
The material of the electrode comprises a metal, and the metal material comprises gold, silver, aluminum, tungsten, nickel or iron, and alloys thereof.
The material of the passivation layer 10 includes silicon oxide.
With this embodiment, no additional integrated reflection device is required, reducing the volume and cost of the whole optical scanning projection mechanism, but there is a certain requirement for the sub-piezoelectric element 023.
In another embodiment, referring to fig. 4, the reflective structure 04 is a reflective layer 11 having a specific micro-nano structure formed on the passivation layer 10, and the material of the reflective layer includes silicon nitride, silicon oxide, polysilicon, silicon oxynitride, aluminum, gold and/or nickel.
The reflective layer 11 of the micro-nano structure includes, but is not limited to, a two-dimensional grating structure and a three-dimensional lattice.
In the two-dimensional grating structure, a metal film (such as an aluminum film, a gold film or a nickel film) with high reflectivity is coated on the passivation layer 10 to form a mirror surface, a series of parallel equal-width and equal-distance scribed lines are scribed on the metal film, and the scribed lines form a reflection grating which can reflect white light and disperse the light.
The three-dimensional lattice structure realizes the reflection of light or wave through the extinction characteristic of the body-centered lattice or the face-centered lattice.
The three-dimensional lattice may also be a photonic crystal structure.
With this embodiment, the material of the reflective layer 11 can be adjusted according to the optical requirements to seek the best reflective effect.
In another embodiment, referring to fig. 5, the reflective structure 04 is a mirror 12 disposed at the movable end 022 of the piezoelectric element 02.
The reflective layer 11 or the mirror 12 formed separately can be adjusted according to the optical requirement, or the material of the reflective layer 11 can be selected to obtain the best reflective effect.
In a preferred embodiment, the reflective structure 04 is located at least at the movable end 022 of the piezoelectric element 02.
Compared with the traditional mechanical driving method, the embodiment can realize optical scanning projection through the warping characteristic of the piezoelectric element 02, and compared with the existing driving device, the cantilever structure of the optical scanning projection device occupies smaller space and can better meet the miniaturization requirement of the optical scanning projection device.
In order to further increase the field of view to adapt to each large scanning range, the present invention provides another embodiment, please refer to fig. 6 to 9, and the difference between the present embodiment and the previous embodiment is that the piezoelectric element includes a plurality of sub-piezoelectric elements arranged along the first direction.
In this embodiment, referring to fig. 6, the first electrode lead 081 and the second electrode lead 091 are both located on the top surface of the piezoelectric element 02 and serve as the external signal connection terminals.
When there are a plurality of sub-piezoelectric elements 023, different sub-piezoelectric elements 023 share the same support layer 06.
The piezoelectric films 07 of the different sub piezoelectric elements 023 are the same in thickness or different in thickness.
The piezoelectric films 07 of different sub piezoelectric elements 023 are made of the same or different materials.
The material of the piezoelectric film 07 includes, but is not limited to, quartz crystal, aluminum nitride, zinc oxide, lead zirconate titanate, barium titanate, lithium gallate, lithium germanate, or titanium germanate, and combinations thereof.
When the number of the sub-piezoelectric elements 023 is plural, an insulating material layer or an air gap is provided between adjacent sub-piezoelectric elements 023.
The insulating material layer or the air gap is used for ensuring the electrical isolation among the sub-piezoelectric elements and reducing the crosstalk.
The optical carrier 05 is a projection screen or an object to be scanned.
Referring to fig. 7, when the positional relationship between the light source 01 and the optical carrier 05 is determined and cannot be changed, the light beam emitted from the light source 01 may fall outside the reflection structure 04, so that the light beam cannot be correctly reflected onto the optical carrier 05.
At this time, the position of the movable end 022 may be moved upward or downward, and the upward movement is taken as an example here for explanation.
Referring to fig. 8, the sub-piezoelectric element 23A in the present embodiment is warped upward, the sub-piezoelectric element 23B is warped downward, and the warping degrees of the sub-piezoelectric element 23A and the sub-piezoelectric element 23B are controlled to ensure that the light or wave emitted by the light source 01 falls on the area where the reflection structure 04 is located.
Referring to fig. 9, after the light or wave emitted by the light source 01 falls on the area where the reflection structure 04 is located, the sub-piezoelectric element 23C may be warped alone, and reflect the light or wave to the corresponding area of the optical carrier 05, so as to scan the optical carrier 05 or realize projection on the optical carrier 05.
Compared with the existing electromagnetic driving method, no external component is needed, and the structure is simplified; compared with an electrostatic driving method, the process is simple, and the driving force is large; the stability and the accuracy of the whole optical scanning projection equipment can be ensured, and meanwhile, the multi-section sub-piezoelectric elements can increase the moving range of the reflecting structure so as to realize the self-adaptive adjustment of the reflecting structure and increase the field angle.
It should be noted that, in the present specification, all the embodiments are described in a related manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the structural embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and reference may be made to the partial description of the method embodiment for relevant points.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (13)
1. An optical scanning projection mechanism, comprising:
a light source for providing a light beam;
the piezoelectric element comprises a fixed end and a movable end which are opposite, the direction from the fixed end to the movable end is a first direction, the piezoelectric element comprises at least one separated sub-piezoelectric element along the first direction, the sub-piezoelectric element comprises a supporting layer and a piezoelectric laminated structure positioned on the supporting layer, different sub-piezoelectric elements share the same supporting layer, and each sub-piezoelectric unit is warped independently under the power-on state;
the fixed end of the piezoelectric element is fixed on the supporting block to form a cantilever structure;
the reflecting structure is used for receiving the light beam and reflecting the light beam, is positioned on the surface of the piezoelectric element or in the piezoelectric element, and is at least positioned at the movable end of the piezoelectric element;
an electrical connection structure electrically connected to the sub-piezoelectric element and having an external signal connection terminal;
and the optical carrier is used for receiving the reflected light beam of the reflecting structure.
2. An optical scanning projection mechanism as claimed in claim 1,
the piezoelectric laminated structure at least comprises a layer of piezoelectric film and electrodes positioned on the upper surface and the lower surface of each layer of piezoelectric film, and two adjacent layers of piezoelectric films share the electrode positioned between the two piezoelectric films;
the sub-piezoelectric element further includes:
a passivation layer on the piezoelectric stack structure;
the electrodes are counted from bottom to top in sequence and are divided into odd-numbered layers of electrodes and even-numbered layers of electrodes;
the first electrode leading-out end is positioned on the top surface or the bottom surface of the piezoelectric element and is electrically connected with the even-numbered electrodes;
and the second electrode leading-out end is positioned on the top surface or the bottom surface of the piezoelectric element and is electrically connected with the odd-layer electrodes.
3. An optical scanning projection mechanism as claimed in claim 2, wherein said passivation layer is light transmissive, said electrode surfaces are smooth, and the topmost electrode of said piezoelectric element acts as a reflective structure.
4. An optical scanning projection mechanism as claimed in claim 3, wherein the material of said electrodes is a light reflecting material, the material of said electrodes comprises a metal, and the metal material comprises gold, silver, aluminum, tungsten, nickel or iron, and alloys thereof.
5. An optical scanning projection mechanism according to claim 3, wherein the material of said passivation layer comprises silicon oxide.
6. The optical scanning projection mechanism according to claim 2, wherein said reflective structure is a reflective layer with a specific micro-nano structure formed above said passivation layer, and the material of said reflective layer comprises silicon nitride, silicon oxide, polysilicon, silicon oxynitride, aluminum, gold and/or nickel.
7. The optical scanning projection mechanism of claim 1, wherein said reflective structure is a mirror disposed at a movable end of said piezoelectric element.
8. The optical scanning projection mechanism of claim 2, wherein said first and second electrode terminals are located on the top surface of said piezoelectric element as said external signal connection terminals.
9. The optical scanning projection mechanism of claim 2, wherein the piezoelectric film thickness of different said sub-piezoelectric elements is the same or different.
10. An optical scanning projection mechanism according to claim 2, wherein said piezoelectric film material of different said sub-piezoelectric elements is the same or different.
11. An optical scanning projection mechanism according to claim 2, wherein the material of said piezoelectric film comprises quartz crystal, aluminum nitride, zinc oxide, lead zirconate titanate, barium titanate, lithium gallate, lithium germanate or titanium germanate.
12. The optical scanning projection mechanism as claimed in claim 1, wherein when there are a plurality of said sub-piezoelectric elements, a plurality of said sub-piezoelectric elements are electrically isolated from each other, and an insulating material layer or an air gap is provided between adjacent sub-piezoelectric elements.
13. An optical scanning projection arrangement according to claim 1, wherein said optical carrier is a projection screen or an object to be scanned.
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