CN113125923A - Automatic loss detection device and detection method for IGBT/SiC device - Google Patents

Automatic loss detection device and detection method for IGBT/SiC device Download PDF

Info

Publication number
CN113125923A
CN113125923A CN202110269813.0A CN202110269813A CN113125923A CN 113125923 A CN113125923 A CN 113125923A CN 202110269813 A CN202110269813 A CN 202110269813A CN 113125923 A CN113125923 A CN 113125923A
Authority
CN
China
Prior art keywords
igbt
sic device
module
loss
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110269813.0A
Other languages
Chinese (zh)
Inventor
孙厚强
张高瑞
秦浩楠
李小伟
王知学
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Zhongmiao Invasive Core Electronics Co ltd
Shandong Jiaotong University
Original Assignee
Qingdao Zhongmiao Invasive Core Electronics Co ltd
Shandong Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qingdao Zhongmiao Invasive Core Electronics Co ltd, Shandong Jiaotong University filed Critical Qingdao Zhongmiao Invasive Core Electronics Co ltd
Priority to CN202110269813.0A priority Critical patent/CN113125923A/en
Publication of CN113125923A publication Critical patent/CN113125923A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2617—Circuits therefor for testing bipolar transistors for measuring switching properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention discloses an IGBT/SiC device loss automatic detection device and a detection method thereof, wherein the device comprises an IGBT/SiC device control circuit module, a driving module and an IGBT/SiC device which transmit data in sequence; the safety of a hardware circuit can be effectively protected, and the failure rate of equipment is reduced.

Description

Automatic loss detection device and detection method for IGBT/SiC device
Technical Field
The invention relates to the technical field of electronic devices, in particular to an automatic loss detection device and method for an IGBT/SiC device.
Background
With the industrial application of frequency converters, electric drive systems and charging systems, power devices have become core devices of power electronic conversion devices, and for the heat dissipation problem of the conversion devices, researchers use multiple heat dissipation methods such as air cooling and water cooling to solve the heat dissipation problem caused by heat loss of the power devices, and often have the fault that the power devices are damaged due to poor heat dissipation, so that the reliable operation of the industrial devices is affected.
Disclosure of Invention
The invention provides an automatic loss detection device and method for an IGBT/SiC device.
The scheme of the invention is as follows:
an IGBT/SiC device loss automatic detection device comprises an IGBT/SiC device control circuit module, a driving module, an IGBT/SiC device, a wireless module and a cloud processing module, wherein the IGBT/SiC device control circuit module, the driving module and the IGBT/SiC device control circuit module sequentially transmit data, the wireless module and the cloud processing module mutually transmit data, the driving module is a driving circuit, and the cloud processing module is a cloud platform service processor; still include IGBT/SiC device respectively to IGBT/SiC device control circuit module transmission data's return circuit current module, return circuit voltage module, temperature module and frequency modulation module, the return circuit current module is including measuring the survey electric current ware of IGBT/SiC device return circuit current data, return circuit voltage module is including measuring the electric potential ware is surveyed to IGBT/SiC device return circuit voltage data, the temperature module is including measuring the temperature sensor of GBT/SiC device temperature data, the frequency modulation module includes the frequency modulator.
The current measuring device is a current data acquisition circuit and is realized by a hardware circuit or a single data acquisition chip.
The voltage detector is a voltage data acquisition circuit and is realized by a hardware circuit or a single data acquisition chip.
The frequency modulator is an IGBT/SiC device switching frequency control circuit and is realized by a hardware drive control circuit, and the frequency modulator is a TLP250 integrated drive chip.
The power supply system supplies power to the IGBT/SiC device control circuit module, the driving module, the IGBT/SiC device, the wireless module and the cloud processing module.
As a preferable technical scheme, the wireless module adopts a Wifi or GRPS mode.
As a preferred technical solution, the cloud platform processor establishes a cloud platform-based IGBT/SiC device full-period loss model through big data analysis by using data transmitted by the wireless module, the GBT/SiC device control circuit module is a GBT/SiC device control circuit processor, the IGBT/SiC device control circuit module transmits a signal to the driving module, and the driving module drives the IGBT/SiC device.
The invention also provides a detection method of the IGBT/SiC device loss automatic detection device,
1) the IGBT/SiC device transmits data of the on-power consumption of the on-voltage, the off-power consumption of the off-power supply, the voltage between the collector and the emitter and the current of the collector in a real-time state to the IGBT/SiC device control circuit module through the loop current module and the loop voltage module respectively; the IGBT/SiC device transmits real-time IGBT/SiC working frequency and IGBT/SiC duty ratio data to the IGBT/SiC device control circuit module through the frequency modulation module, and the IGBT/SiC device control circuit module obtains switching loss and on-state loss through the obtained data;
2) the GBT/SiC device transmits real-time temperature data to the IGBT/SiC device control circuit module through a temperature module;
3) the IGBT/SiC device control circuit module transmits real-time switching loss and on-state loss data to the cloud processing module through the wireless module, the IGBT/SiC device control circuit module transmits real-time temperature data to the cloud processing module through the wireless module, the cloud processing module establishes an IGBT/SiC device full-period loss model through big data analysis and the obtained switching loss, on-state loss data and temperature data, the IGBT/SiC device loss and temperature rise are automatically detected, a turn-off signal is sent to the IGBT/SiC device control circuit module through the wireless module when the IGBT/SiC device is detected to be abnormal, and the IGBT/SiC device control circuit module turns off the driving circuit to turn off the IGBT/SiC device.
As an optimized technical scheme, the IGBT/SiC device full-period loss model comprises a loss early warning model and a temperature rise early warning model, and the IGBT/SiC device abnormity comprises IGBT/SiC device loss state abnormity and IGBT/SiC device temperature rise abnormity.
As an optimal technical scheme, a loss early warning model of the IGBT/SiC device full-period loss model is trained through a BP neural network, the loss state of the IGBT/SiC device is predicted in real time, and when the loss state exceeds a normal value, a driving circuit is turned off in time to protect the IGBT/SiC device; and the switching loss and the on-state loss are used as model input, the working state of the IGBT/SiC device is used as output, once the loss exceeds a normal value, the output working state is a fault state, and otherwise, the output working state is a normal state.
As a preferred technical scheme, in the temperature rise early warning model, when the temperature data transmitted to the cloud processing module exceeds a set early warning value, the cloud processing module sends a turn-off signal to the IGBT/SiC device control circuit module through the wireless module, and the IGBT/SiC device control circuit module turns off the driving circuit to turn off the IGBT/SiC device.
As a preferred technical solution, the big data analysis includes data mining.
The switching loss is Pswitch ═ (Eon + Eoff) · fswitch; wherein Eon is the turn-on power consumption of the turn-on voltage; eoff is the turn-off power consumption of the power supply; fswitch is the working frequency;
the on-state loss is Pcond (Vce Ic duty); vce is the voltage between the collector and the emitter; ic is collector current; duty is the duty cycle.
Due to the adoption of the technical scheme, the automatic detection device and the detection method for the loss of the IGBT/SiC device comprise an IGBT/SiC device control circuit module, a driving module, an IGBT/SiC device, a wireless module and a cloud processing module, wherein the IGBT/SiC device control circuit module, the driving module and the IGBT/SiC device are used for sequentially transmitting data, the wireless module and the cloud processing module are used for mutually transmitting data, the driving module is a driving circuit, and the cloud processing module is a cloud platform service processor; still include IGBT/SiC device respectively to IGBT/SiC device control circuit module transmission data's return circuit current module, return circuit voltage module, temperature module and frequency modulation module, the return circuit current module is including measuring the survey electric current ware of IGBT/SiC device return circuit current data, return circuit voltage module is including measuring the electric potential ware is surveyed to IGBT/SiC device return circuit voltage data, the temperature module is including measuring the temperature sensor of GBT/SiC device temperature data, the frequency modulation module includes the frequency modulator.
The invention has the advantages that:
the IGBT/SiC power device working state can be monitored in real time through the IGBT/SiC device loss automatic detection device, the safety and reliability of the operation of an application system are improved, the working maintenance cost of the system is greatly reduced, and personal accidents and property loss caused by the faults of the application system are avoided; the safety of a hardware circuit can be effectively protected, and the failure rate of equipment is reduced.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Detailed Description
In order to make up for the above deficiencies, the invention provides an automatic loss detection device and a detection method for an IGBT/SiC device, so as to solve the problems in the background art.
An IGBT/SiC device loss automatic detection device comprises an IGBT/SiC device control circuit module, a driving module, an IGBT/SiC device, a wireless module and a cloud processing module, wherein the IGBT/SiC device control circuit module, the driving module and the IGBT/SiC device control circuit module sequentially transmit data, the wireless module and the cloud processing module mutually transmit data, the driving module is a driving circuit, and the cloud processing module is a cloud platform service processor; still include IGBT/SiC device respectively to IGBT/SiC device control circuit module transmission data's return circuit current module, return circuit voltage module, temperature module and frequency modulation module, the return circuit current module is including measuring the survey electric current ware of IGBT/SiC device return circuit current data, return circuit voltage module is including measuring the electric potential ware is surveyed to IGBT/SiC device return circuit voltage data, the temperature module is including measuring the temperature sensor of GBT/SiC device temperature data, the frequency modulation module includes the frequency modulator.
The power supply system supplies power to the IGBT/SiC device control circuit module, the driving module, the IGBT/SiC device, the wireless module and the cloud processing module.
The wireless module adopts a Wifi or GRPS mode.
The cloud platform processor utilizes data transmitted by the wireless module to establish a cloud platform-based IGBT/SiC device full-period loss model through big data analysis, the GBT/SiC device control circuit module is a GBT/SiC device control circuit processor, the IGBT/SiC device control circuit module transmits signals to the driving module, and the driving module drives the IGBT/SiC device.
The invention also provides a detection method of the IGBT/SiC device loss automatic detection device,
1) the IGBT/SiC device transmits data of the on-power consumption of the on-voltage, the off-power consumption of the off-power supply, the voltage between the collector and the emitter and the current of the collector in a real-time state to the IGBT/SiC device control circuit module through the loop current module and the loop voltage module respectively; the IGBT/SiC device transmits real-time IGBT/SiC working frequency and IGBT/SiC duty ratio data to the IGBT/SiC device control circuit module through the frequency modulation module, and the IGBT/SiC device control circuit module obtains switching loss and on-state loss through the obtained data;
2) the GBT/SiC device transmits real-time temperature data to the IGBT/SiC device control circuit module through a temperature module;
3) the IGBT/SiC device control circuit module transmits real-time switching loss and on-state loss data to the cloud processing module through the wireless module, the IGBT/SiC device control circuit module transmits real-time temperature data to the cloud processing module through the wireless module, the cloud processing module establishes an IGBT/SiC device full-period loss model through big data analysis and the obtained switching loss, on-state loss data and temperature data, the IGBT/SiC device loss and temperature rise are automatically detected, a turn-off signal is sent to the IGBT/SiC device control circuit module through the wireless module when the IGBT/SiC device is detected to be abnormal, and the IGBT/SiC device control circuit module turns off the driving circuit to turn off the IGBT/SiC device.
The IGBT/SiC device full-period loss model comprises a loss early warning model and a temperature rise early warning model, and the IGBT/SiC device abnormity comprises IGBT/SiC device loss state abnormity and IGBT/SiC device temperature rise abnormity.
The loss early warning model of the IGBT/SiC device full-period loss model is trained through a BP neural network, the loss state of the IGBT/SiC device is predicted in real time, and when the loss state exceeds a normal value, a driving circuit is turned off in time to protect the IGBT/SiC device; and the switching loss and the on-state loss are used as model input, the working state of the IGBT/SiC device is used as output, once the loss exceeds a normal value, the output working state is a fault state, and otherwise, the output working state is a normal state.
And after the temperature data transmitted to the cloud processing module exceeds a set early warning value, the cloud processing module sends a turn-off signal to the IGBT/SiC device control circuit module through the wireless module, and the IGBT/SiC device control circuit module turns off the drive circuit to turn off the IGBT/SiC device.
The big data analysis includes data mining.
The switching loss is Pswitch ═ (Eon + Eoff) · fswitch; wherein Eon is the turn-on power consumption of the turn-on voltage; eoff is the turn-off power consumption of the power supply; fswitch is the working frequency;
the on-state loss is Pcond (Vce Ic duty); vce is the voltage between the collector and the emitter; ic is collector current; duty is the duty cycle.
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
Example 1:
an IGBT/SiC device loss automatic detection device comprises an IGBT/SiC device control circuit module, a driving module, an IGBT/SiC device, a wireless module and a cloud processing module, wherein the IGBT/SiC device control circuit module, the driving module and the IGBT/SiC device control circuit module sequentially transmit data, the wireless module and the cloud processing module mutually transmit data, the driving module is a driving circuit, and the cloud processing module is a cloud platform service processor; still include IGBT/SiC device respectively to IGBT/SiC device control circuit module transmission data's return circuit current module, return circuit voltage module, temperature module and frequency modulation module, the return circuit current module is including measuring the survey electric current ware of IGBT/SiC device return circuit current data, return circuit voltage module is including measuring the electric potential ware is surveyed to IGBT/SiC device return circuit voltage data, the temperature module is including measuring the temperature sensor of GBT/SiC device temperature data, the frequency modulation module includes the frequency modulator.
The power supply system supplies power to the IGBT/SiC device control circuit module, the driving module, the IGBT/SiC device, the wireless module and the cloud processing module.
The wireless module adopts a Wifi or GRPS mode.
The cloud platform processor utilizes data transmitted by the wireless module to establish a cloud platform-based IGBT/SiC device full-period loss model through big data analysis, the GBT/SiC device control circuit module is a GBT/SiC device control circuit processor, the IGBT/SiC device control circuit module transmits signals to the driving module, and the driving module drives the IGBT/SiC device.
Example 2:
1) the IGBT/SiC device transmits data of the on-power consumption of the on-voltage, the off-power consumption of the off-power supply, the voltage between the collector and the emitter and the current of the collector in a real-time state to the IGBT/SiC device control circuit module through the loop current module and the loop voltage module respectively; the IGBT/SiC device transmits real-time IGBT/SiC working frequency and IGBT/SiC duty ratio data to the IGBT/SiC device control circuit module through the frequency modulation module, and the IGBT/SiC device control circuit module obtains switching loss and on-state loss through the obtained data;
2) the GBT/SiC device transmits real-time temperature data to the IGBT/SiC device control circuit module through a temperature module;
3) the IGBT/SiC device control circuit module transmits real-time switching loss and on-state loss data to the cloud processing module through the wireless module, the IGBT/SiC device control circuit module transmits real-time temperature data to the cloud processing module through the wireless module, the cloud processing module establishes an IGBT/SiC device full-period loss model through big data analysis and the obtained switching loss, on-state loss data and temperature data, the IGBT/SiC device loss and temperature rise are automatically detected, a turn-off signal is sent to the IGBT/SiC device control circuit module through the wireless module when the IGBT/SiC device is detected to be abnormal, and the IGBT/SiC device control circuit module turns off the driving circuit to turn off the IGBT/SiC device.
The IGBT/SiC device full-period loss model comprises a loss early warning model and a temperature rise early warning model, and the IGBT/SiC device abnormity comprises IGBT/SiC device loss state abnormity and IGBT/SiC device temperature rise abnormity.
The loss early warning model of the IGBT/SiC device full-period loss model is trained through a BP neural network, the loss state of the IGBT/SiC device in the future is predicted in real time by sampling data at different time in an actual circuit, the loss state of the IGBT/SiC device is predicted in real time, and when the loss state exceeds a normal value, the driving circuit is turned off in time to protect the IGBT/SiC device; and the switching loss and the on-state loss are used as model input, the working state of the IGBT/SiC device is used as output, once the loss exceeds a normal value, the output working state is a fault state, and otherwise, the output working state is a normal state.
The temperature rise early warning model of the IGBT/SiC device full-period loss model is trained through a BP neural network, the future 1-2 second temperature data is predicted in real time through sampling data at different time in an actual circuit, when the predicted temperature data exceeds a set early warning value, the cloud processing module sends a turn-off signal to the IGBT/SiC device control circuit module through the wireless module, and the IGBT/SiC device control circuit module turns off the driving circuit to turn off the IGBT/SiC device.
The big data analysis includes data mining.
The switching loss is Pswitch ═ (Eon + Eoff) · fswitch; wherein Eon is the turn-on power consumption of the turn-on voltage; eoff is the turn-off power consumption of the power supply; fswitch is the working frequency;
the on-state loss is Pcond (Vce Ic duty); vce is the voltage between the collector and the emitter; ic is collector current; duty is the duty cycle.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (9)

1. The utility model provides a IGBT/SiC device loss automatic checkout device which characterized in that: the intelligent integrated circuit comprises an IGBT/SiC device control circuit module, a driving module, an IGBT/SiC device, a wireless module and a cloud processing module, wherein the IGBT/SiC device control circuit module, the driving module and the IGBT/SiC device control circuit module sequentially transmit data, the wireless module and the cloud processing module mutually transmit data, the driving module is a driving circuit, and the cloud processing module is a cloud platform service processor; still include IGBT/SiC device respectively to IGBT/SiC device control circuit module transmission data's return circuit current module, return circuit voltage module, temperature module and frequency modulation module, the return circuit current module is including measuring the survey electric current ware of IGBT/SiC device return circuit current data, return circuit voltage module is including measuring the electric potential ware is surveyed to IGBT/SiC device return circuit voltage data, the temperature module is including measuring the temperature sensor of GBT/SiC device temperature data, the frequency modulation module includes the frequency modulator.
2. The automatic loss detection device for the IGBT/SiC device according to claim 1, wherein: the power supply system supplies power to the IGBT/SiC device control circuit module, the driving module, the IGBT/SiC device, the wireless module and the cloud processing module.
3. The automatic loss detection device for the IGBT/SiC device according to claim 1, wherein: the wireless module adopts a Wifi or GRPS mode.
4. The automatic loss detection device for the IGBT/SiC device according to claim 1, wherein: the cloud platform processor utilizes data transmitted by the wireless module to establish a cloud platform-based IGBT/SiC device full-period loss model through big data analysis, the GBT/SiC device control circuit module is a GBT/SiC device control circuit processor, the IGBT/SiC device control circuit module transmits signals to the driving module, and the driving module drives the IGBT/SiC device.
5. A detection method of the IGBT/SiC device loss automatic detection device as claimed in claims 1 to 5, characterized in that:
1) the IGBT/SiC device transmits data of the on-power consumption of the on-voltage, the off-power consumption of the off-power supply, the voltage between the collector and the emitter and the current of the collector in a real-time state to the IGBT/SiC device control circuit module through the loop current module and the loop voltage module respectively; the IGBT/SiC device transmits real-time IGBT/SiC working frequency and IGBT/SiC duty ratio data to the IGBT/SiC device control circuit module through the frequency modulation module, and the IGBT/SiC device control circuit module obtains switching loss and on-state loss through the obtained data;
2) the GBT/SiC device transmits real-time temperature data to the IGBT/SiC device control circuit module through a temperature module;
3) the IGBT/SiC device control circuit module transmits real-time switching loss and on-state loss data to the cloud processing module through the wireless module, the IGBT/SiC device control circuit module transmits real-time temperature data to the cloud processing module through the wireless module, the cloud processing module establishes an IGBT/SiC device full-period loss model through big data analysis and the obtained switching loss, on-state loss data and temperature data, the IGBT/SiC device loss and temperature rise are automatically detected, a turn-off signal is sent to the IGBT/SiC device control circuit module through the wireless module when the IGBT/SiC device is detected to be abnormal, and the IGBT/SiC device control circuit module turns off the driving circuit to turn off the IGBT/SiC device.
6. The method for detecting the IGBT/SiC device loss automatic detection device according to claim 5, characterized in that: the IGBT/SiC device full-period loss model comprises a loss early warning model and a temperature rise early warning model, and the IGBT/SiC device abnormity comprises IGBT/SiC device loss state abnormity and IGBT/SiC device temperature rise abnormity.
7. The method for detecting the IGBT/SiC device loss automatic detection device according to claim 6, characterized in that: the loss early warning model of the IGBT/SiC device full-period loss model is trained through a BP neural network, the loss state of the IGBT/SiC device is predicted in real time, and when the loss state exceeds a normal value, a driving circuit is turned off in time to protect the IGBT/SiC device; and the switching loss and the on-state loss are used as model input, the working state of the IGBT/SiC device is used as output, once the loss exceeds a normal value, the output working state is a fault state, and otherwise, the output working state is a normal state.
8. The method for detecting the IGBT/SiC device loss automatic detection device according to claim 6, characterized in that: after the temperature rise early warning model exceeds a set early warning value, the cloud processing module sends a turn-off signal to the IGBT/SiC device control circuit module through the wireless module, and the IGBT/SiC device control circuit module turns off the driving circuit to turn off the IGBT/SiC device.
9. The method for detecting the IGBT/SiC device loss automatic detection device according to claim 5, characterized in that: the big data analysis includes data mining.
CN202110269813.0A 2021-03-12 2021-03-12 Automatic loss detection device and detection method for IGBT/SiC device Pending CN113125923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110269813.0A CN113125923A (en) 2021-03-12 2021-03-12 Automatic loss detection device and detection method for IGBT/SiC device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110269813.0A CN113125923A (en) 2021-03-12 2021-03-12 Automatic loss detection device and detection method for IGBT/SiC device

Publications (1)

Publication Number Publication Date
CN113125923A true CN113125923A (en) 2021-07-16

Family

ID=76773045

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110269813.0A Pending CN113125923A (en) 2021-03-12 2021-03-12 Automatic loss detection device and detection method for IGBT/SiC device

Country Status (1)

Country Link
CN (1) CN113125923A (en)

Similar Documents

Publication Publication Date Title
CN103227506B (en) Triggering and monitoring unit of converter valve thyristor
CN106443358B (en) Overhead power distribution network traveling wave positioning system based on signal injection device
CN111781482B (en) Method and device for detecting health state of bonding wire of high-power SIC MOSFET module
CN103105572B (en) Device for testing IGBT module
CN2924549Y (en) Lighting cable power-off stealing detection device
CN105206085A (en) Traffic lamp intelligent fault monitoring and repairing system based on internet of things
CN201741288U (en) Traffic signal lamp detector
CN103267922A (en) Intelligent cable short circuit grounding and temperature fault indicator
CN105720560A (en) Converter three-grade signal protection circuit
CN204241594U (en) A kind of real-time monitoring system for substation transformer operating condition
CN105004434A (en) Wireless temperature acquisition device with reversal connection protection function
CN215263832U (en) Automatic loss detection device for IGBT/SiC device
CN110611298A (en) IPM protection system for flywheel energy storage device
CN113125923A (en) Automatic loss detection device and detection method for IGBT/SiC device
CN204155435U (en) A kind of wireless temperature acquisition system
CN202153249U (en) Overhead line fault indicator
CN203455090U (en) Temperature detection system for high-voltage bus
US6185116B1 (en) HVDC power transmission system with cooling and switching device temperature detection
CN104834255A (en) Large-power rectification cabinet water-cooled bus real-time monitoring system
CN205353270U (en) Intelligent cable fault indicator
CN205581252U (en) Power system fault indicator
CN113125924A (en) IGBT/SiC device fault on-line automatic monitoring system
US11239838B2 (en) Driving device and method of power device
CN210515618U (en) Cable branch box operating condition detection alarm indicator for power distribution network
CN215263833U (en) IGBT/SiC device fault on-line automatic monitoring system

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination