CN113125007B - Sinusoidal gated detector avalanche signal processing system and processing method - Google Patents

Sinusoidal gated detector avalanche signal processing system and processing method Download PDF

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CN113125007B
CN113125007B CN201911412764.0A CN201911412764A CN113125007B CN 113125007 B CN113125007 B CN 113125007B CN 201911412764 A CN201911412764 A CN 201911412764A CN 113125007 B CN113125007 B CN 113125007B
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signal processing
avalanche signal
sine
avalanche
processing system
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CN113125007A (en
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王泉
蒋连军
唐世彪
蒋伟
骆皓月
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Quantumctek Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/4413Type
    • G01J2001/442Single-photon detection or photon counting
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/444Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/4446Type of detector
    • G01J2001/446Photodiode
    • G01J2001/4466Avalanche
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a sine gate-controlled detector avalanche signal processing system and a processing method, wherein the system is used for processing output signals of a single photon avalanche diode in a sine gate-controlled detector and comprises a sine gate-controlled detector avalanche signal processing circuit, a band rejection filter of the sine gate-controlled detector avalanche signal processing circuit is cascaded by adopting a multi-stage microstrip filter, the multi-stage microstrip filter is directly printed on a redistribution layer substrate, and other devices of the sine gate-controlled detector avalanche signal processing circuit are packaged on the redistribution layer substrate. The invention has the advantages that: the microstrip line band-stop filter is designed through the band-stop filter, the microstrip line band-stop filter is directly arranged in the redistribution layer substrate, and other circuit device parts are interconnected on the substrate, so that the size is reduced, the problems of size, cost, stability and consistency caused by the use of numerous passive devices are avoided, and the system performance is improved.

Description

Sinusoidal gated detector avalanche signal processing system and processing method
Technical Field
The invention relates to the field of single photon detection and quantum secure communication, in particular to a system and a method for processing avalanche signals of a sine gate control detector.
Background
The quantum secure communication realizes the transmission of quantum states by transmitting single photons or entangled photons, thereby completing the quantum secure communication. At present, a Quantum communication technology based on single-photon implementation generally refers to a Quantum Key Distribution (QKD) technology, and in principle, any eavesdropping on the QKD process is inevitably discovered. Thus, the key generated by the QKD process has theoretically unconditional security. Among such important technical implementation processes, the single photon detection technology is one of the indispensable important technologies. The Single Photon detection technology is widely applied to the fields of quantum key distribution, optical fiber communication, optical fiber sensing, laser radar, fluorescence imaging and the like, and a Single Photon Avalanche Diode (SPAD) is one of the most commonly used Single Photon detectors at present, and can be divided into a Free Running Mode and a Gated Mode from the working Mode.
The most significant advantage of the free-running Mode SPAD is that photon detection can be performed without knowing the photon arrival time, and because the photon arrival time is unknown, the SPAD is always in Geiger Mode (Geiger Mode) so that incident photons can be detected at any time. However, the biggest problem is that SPAD is always in geiger mode, resulting in greatly shortened service life, and excessive dark count and low saturation count rate during operation.
In order to overcome the above disadvantages, a gating mode is generally used in practical use. This mode also requires the SPAD to operate in geiger mode, but differs in that it causes the SPAD to be periodically in geiger mode. By synchronizing the arrival time of the photons, the SPAD bias voltage is increased when the photons arrive, and the avalanche process is quenched before the next photon arrives after the avalanche occurs, so that the continuous detection of the SPAD on the single photon signals is ensured, the saturation counting rate is increased, and the dark counting probability is reduced. The control signal of the gating mode has various forms, wherein, the sine gating mode has simple circuit, high speed and high frequency, and uses sine wave as the input of the gate signal, so that the noise fundamental frequency component in the output signal of the detector is also the sine noise signal with the same frequency, and the like, and is widely used. Chinese patent publication No. CN 103411691A, entitled frequency-adjustable gigahertz sine-gated near-infrared single photon detector, whose basic process of processing avalanche signals of sine-gated detector is shown in fig. 1, after SPAD generates avalanche, the output signal passes through the action of low-pass filter, in which the included sine noise signal with the same frequency as the gate signal is greatly suppressed, and the weaker avalanche signal has wider frequency spectrum, so the low-pass filter attenuates it less; and then amplified by a high-speed broadband amplifier, screened by a threshold discriminator and output as a pulse signal matched with a rear-end counter circuit. However, the biggest disadvantage of this method is that a low-pass filter is used to perform noise suppression immediately after the signal is output, so that high-frequency components in the avalanche signal are also suppressed, the signal amplitude is reduced, and the time jitter is increased.
Compared with this solution, a better solution is to use a band-stop filter, and the basic principle is shown in the following documents: advances in InGaAs/InP Signal-photon detector systems for quaternary communications, light: science & applications (2015) 4, e286; doi:10.1038/lsa.2015.59; public online 8May 2015, a working principle diagram is shown in FIG. 2, a waveform is shown in FIG. 3, a sinusoidal gating signal is input from (1), an SPAD entering into a Geiger mode generates an avalanche pulse signal after photons enter, the waveform is shown in (2) in FIG. 3, and includes a higher harmonic of the frequency of an original gate signal, so that a signal output at (2) in FIG. 2 is an avalanche signal obtained by superimposing a differential signal of a sinusoidal noise signal with a high frequency, wherein (3) in FIG. 2 is an avalanche signal obtained by filtering and amplifying an original signal, and (4) is a pulse signal obtained by screening the avalanche signal by a discriminator. The band-stop filter components are connected after (2) in fig. 2, the center frequency of the band-stop filter components is integral multiple of the frequency of the gate signal, differential signals of the gate signal can be effectively filtered, and only avalanche signals are left finally. Before threshold discrimination, the avalanche signal is re-passed into a low pass filter to further reduce the noise level and smooth the amplified avalanche signal.
However, the avalanche signal processing circuit in the manner of fig. 2 is built by using a plurality of discrete devices, which results in a large volume, and especially, a filter therein is usually in a form of cascade connection of multiple filters in order to achieve a high frequency gain roll-off speed; peripheral devices need to be added on a PCB to realize the required high-speed broadband amplifier, certain circuit parasitic effect exists, and the size problem is more obvious in occasions needing a plurality of channels, so that the cost of the circuit is increased, and the integration of a system is not facilitated; meanwhile, because the number of devices required by the filter is large, the problems of consistency and stability are obvious, and the maintenance time when the circuit breaks down is increased; in addition, due to the high frequency of the gating signal, a special shielding cavity needs to be designed for the whole circuit board card to reduce electromagnetic interference.
Disclosure of Invention
The invention aims to solve the technical problem of reducing the volume of an avalanche signal processing circuit so as to reduce the cost and improve the stability and consistency of the avalanche signal processing circuit.
The invention solves the technical problems through the following technical means: the avalanche signal processing system of the sine gate-controlled detector is used for processing output signals of a single photon avalanche diode in the sine gate-controlled detector and comprises an avalanche signal processing circuit of the sine gate-controlled detector, a band rejection filter of the avalanche signal processing circuit of the sine gate-controlled detector is cascaded by adopting a plurality of stages of microstrip line filters, the plurality of stages of microstrip line filters are directly printed on a redistribution layer substrate, and other devices of the avalanche signal processing circuit of the sine gate-controlled detector are packaged on the redistribution layer substrate.
The band elimination filter adopts the design of the microstrip line band elimination filter, the microstrip line band elimination filter is directly arranged in a redistribution layer (RDL) substrate, and other devices of the avalanche signal processing circuit of the sine gate-controlled detector are interconnected on the substrate, so that the size is reduced, the size problem, the cost problem, the stability problem and the consistency problem caused by the use of a plurality of passive devices are avoided, and the performance of the avalanche signal processing system of the sine gate-controlled detector is improved.
The sinusoidal gating detector avalanche signal processing circuit comprises a first band-stop filter, a first low-pass filter, a first high-speed broadband amplifier, a gain matching circuit, a second high-speed broadband amplifier, a second low-pass filter, a second band-stop filter and a threshold discriminator which are connected in sequence, wherein the input end of the first band-stop filter is used as the input end of an avalanche signal, the first band-stop filter and the second band-stop filter are cascaded by adopting a multi-stage microstrip filter, and the first low-pass filter, the first high-speed broadband amplifier, the gain matching circuit, the second high-speed broadband amplifier, the second low-pass filter and the threshold discriminator are packaged on the redistribution layer substrate.
As an optimized technical scheme, the sine-gated detector comprises a first resistor, a second resistor, a third resistor, a first capacitor, a second capacitor and a single photon avalanche diode, wherein one end of the first resistor is connected with one end of the first capacitor, the other end of the first resistor is grounded, one end of the second resistor is connected with a power supply, the other end of the second resistor is connected with a cathode of the single photon avalanche diode, an anode of the single photon avalanche diode is connected with one end of the third resistor, the other end of the third resistor is grounded, the other end of the first capacitor is connected to a connecting line of the second resistor and the single photon avalanche diode, and one end of the first capacitor is used as a sine-gated signal input end to input a sine-gated signal; one end of the second capacitor is connected to a connecting wire of the photon avalanche diode and the third resistor, and the other end of the second capacitor is used as an output end of the avalanche signal.
As an optimized technical scheme, the redistribution layer substrate is made of ceramic.
As an optimized technical scheme, the gain matching circuit is a 50-ohm pi-type attenuator circuit which is packaged in a micro mode.
As an optimized technical scheme, other devices of the sinusoidal gating detector avalanche signal processing circuit are packaged on the redistribution layer substrate through a system-in-package technology.
As an optimized technical scheme, a plurality of bonding pads are arranged below the redistribution layer substrate.
As an optimized technical scheme, the sine-gated detector avalanche signal processing system further comprises a packaging shell plated with a shielding material, and the sine-gated detector avalanche signal processing circuit and the redistribution layer substrate are packaged in the packaging shell.
As an optimized technical scheme, the shielding material is metal.
As an optimized technical scheme, the metal shielding material is any one of copper foil, aluminum foil or PUE-2R type liquid energy wave-absorbing coating.
As an optimized technical scheme, the sine-gated detector avalanche signal processing system further comprises a counter, and the output end of the sine-gated detector avalanche signal processing circuit is connected with the counter.
The invention also provides a method for processing the avalanche signal by adopting the avalanche signal processing system of the sine gating detector in any scheme, the avalanche signal processing system of the sine gating detector inputs a signal mixed with the avalanche signal and sine noise, and the avalanche signal meeting the amplitude requirement is generated after the processing of the avalanche signal processing circuit of the sine gating detector.
The invention has the advantages that:
(1) The band-stop filter in the module is designed by adopting a microstrip line band-stop filter, the microstrip line band-stop filter is directly arranged in a redistribution layer (RDL) substrate, and parts such as a high-speed broadband amplifier, a gain matching circuit, a low-pass filter and the like are interconnected on the substrate, so that the size is reduced, the problems of size, cost, stability and consistency caused by the use of numerous passive devices are avoided, and the performance of an avalanche signal processing system of the sine gate control detector is improved.
(2) The encapsulation of the avalanche signal processing system of the sine gated detector is realized by using the SiP technology, the modularization of the avalanche signal processing circuit is realized, the size is very small, the distribution parameter characteristics of the circuit are greatly reduced, and the system integration is facilitated; when a fault occurs, the module is directly replaced, so that the fault positioning time is saved, and the system function is quickly recovered.
(3) By encapsulating the avalanche signal processing circuit in the encapsulation shell plated with the metal shielding material, the avalanche signal processing circuit is prevented from influencing other circuits during working, and electromagnetic interference is reduced.
(4) The band-stop filter is realized by adopting a method of cascading multistage microstrip line filters, the filter is directly printed on a redistribution layer substrate made of ceramic, and the ceramic substrate has the dielectric constant more than one time of that of an FR4 material, so that the multistage band-stop filter has the advantages of large dielectric constant, excellent temperature stability, good heat dissipation effect, excellent frequency gain characteristic consistency and further improved system stability and consistency.
Drawings
FIG. 1 is a schematic circuit diagram of a sinusoidal gated detector avalanche signal processing circuit provided in the prior art;
FIG. 2 is a circuit schematic diagram of another sinusoidal gated detector avalanche signal processing circuit provided in the prior art;
figure 3 is a waveform diagram of an alternative sinusoidal gated detector avalanche signal processing circuit provided in the prior art;
fig. 4 is a schematic circuit diagram of an avalanche signal processing circuit of a sine-gated detector according to an embodiment of the present invention;
figure 5 is a circuit schematic of a system using sinusoidal gated detector avalanche signal processing circuitry according to an embodiment of the present invention;
figure 6 is a circuit schematic of another system using sinusoidal gated detector avalanche signal processing circuitry according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 4, a sinusoidal gated detector avalanche signal processing system is used to process the output signal of a single photon avalanche diode in a sinusoidal gated detector.
The sine gate control detector comprises a first resistor R1, a second resistor R2, a third resistor R3, a first capacitor C1, a second capacitor C2 and a single photon avalanche diode SPAD, wherein one end of the first resistor R1 is connected with one end of the first capacitor C1, the other end of the first resistor R1 is grounded, and one end of the second resistor R2 is connected with a power supply V Bias The other end of the second resistor R2 is connected with the cathode of a single photon avalanche diode SPAD, and the anode of the single photon avalanche diode SPAD is connected with the cathode of the single photon avalanche diode SPADOne end of a third resistor R3 and the other end of the third resistor R3 are grounded, the other end of the first capacitor C1 is connected to a connecting line of the second resistor R2 and the single-photon avalanche diode SPAD, and one end of the first capacitor C1 is used as a sine gate control signal input end to input a sine gate control signal; one end of the second capacitor C2 is connected to a connection line between the photon avalanche diode SPAD and the third resistor R3, and the other end of the second capacitor C2 serves as an output end of the avalanche signal.
The avalanche signal processing system comprises an avalanche signal processing circuit, the avalanche signal processing circuit comprises a first band-stop filter F1, a first low-pass filter F2, a first high-speed broadband amplifier A1, a gain matching circuit AT, a second high-speed broadband amplifier A2, a second low-pass filter F3, a second band-stop filter F4 and a threshold discriminator D1 which are connected in sequence, and the input end of the first band-stop filter F1 is used as the input end of an avalanche signal.
The first band-stop filter F1 and the second band-stop filter F4 are cascaded by adopting a multistage microstrip filter, and the multistage microstrip filter is directly printed on the redistribution layer substrate 1. For the selection of the redistribution layer substrate 1, in the embodiment of the present invention, preferably, the redistribution layer substrate 1 is made of ceramic, and the ceramic substrate has the disadvantages of low toughness, fragility, and the like, and is not suitable for large-area use, but has excellent electrical insulation performance, high thermal conductivity, excellent soldering performance, and high adhesion strength.
As shown in fig. 5, a first low-pass filter F2, a first high-speed broadband amplifier A1, a gain matching circuit AT, a second high-speed broadband amplifier A2, a second low-pass filter F3, and a threshold discriminator D1 are interconnected on the redistribution layer substrate 1 by a System in a Package (SiP) technology, so as to form a sine-gated detector avalanche signal processing System.
The working process and principle of the embodiment 1 of the invention are as follows: the avalanche signal firstly enters a first band-stop filter F1, the first band-stop filter F1 carries out first suppression on fundamental frequency and a frequency doubling component of a sinusoidal noise signal in the avalanche signal, energy components of the avalanche signal can be reserved to the greatest extent, high-frequency components in the avalanche signal are prevented from being suppressed, and meanwhile, the introduction of circuit noise and the requirement on a rear-stage amplifier can be balanced by adopting the operation of suppressing the noise signal for multiple times. Since the sinusoidal noise signal contains the harmonic components of the gating signal frequency, after the first band-stop filter F1 attenuates the fundamental frequency component and the frequency-doubled component, the noise signal is further attenuated using the first low-pass filter F2 having a bandwidth of 3dB slightly greater than the gating signal frequency, and the first low-pass filter F2 attenuates the avalanche signal of the detector relatively less in view of its wider spectral components.
At this time, in the signals subjected to the filtering processing twice, the amplitude of the avalanche signal is already equivalent to that of the sinusoidal noise signal, but the continuous filtering attenuation can cause excessive attenuation of the two types of signals, and extra circuit noise can be introduced, so that in order to reduce the parasitic parameters of the circuit, the first high-speed broadband amplifier A1 is adopted to amplify the signals. In order to realize the application of the module facing different occasions, a gain matching circuit AT is arranged, the output signal of the first high-speed broadband amplifier A1 is attenuated by the gain matching circuit AT and then output to a second high-speed broadband amplifier A2 for further amplification, AT the moment, the signal still contains a small amount of sinusoidal noise signals with the same frequency as the gating signal, the signal passes through a second low-pass filter F3 and then passes through a second band-stop filter F4, the amplitude of the avalanche signal in the signal is very obvious, and the avalanche signal meeting the amplitude requirement is obtained.
The band elimination filter in the module is designed by adopting a microstrip line band elimination filter, the microstrip line band elimination filter is directly arranged in the redistribution layer substrate 1, and parts such as a high-speed broadband amplifier, a gain matching circuit, a low-pass filter and the like are interconnected on the redistribution layer substrate 1, so that the modularization of an avalanche signal processing circuit is realized, the volume is reduced, the volume problem, the cost problem, the stability problem and the consistency problem caused by the use of numerous passive devices are avoided, and the performance of the module is improved; the filter is directly printed on the redistribution layer substrate 1 made of ceramic, and the dielectric constant of the ceramic substrate is more than one time of that of an FR4 material, so that the ceramic substrate is large in dielectric constant, excellent in temperature stability and good in heat dissipation effect, the multistage band-stop filter with excellent frequency gain characteristic consistency is realized, and the stability and consistency of a system are further improved.
Example 2
The difference between embodiment 2 of the present invention and embodiment 1 is that: a plurality of bonding pads (not shown) are disposed under the redistribution layer substrate 1.
The avalanche signal processing system of the sine-gated detector further comprises a packaging shell (not shown) coated with a shielding material, and the avalanche signal processing module and the redistribution layer substrate 1 are packaged in the packaging shell. Preferably, the shielding material is a metal.
In a specific implementation manner of embodiment 2 of the present invention, the metal shielding material is any one of a copper foil, an aluminum foil, or a PUE-2R type liquid energy wave absorbing coating.
The working process and principle of the embodiment 2 of the invention are as follows:
the avalanche signal processing system forms a standard quasi-chip module by providing pads under the redistribution layer substrate 1. By encapsulating the avalanche signal processing system in the encapsulation shell plated with the metal shielding material, the avalanche signal processing circuit is prevented from influencing other circuits during working, and electromagnetic interference is reduced.
Example 3
The difference between embodiment 3 of the present invention and embodiment 1 is that: the gain matching circuit AT is a 50 ohm pi-type attenuator circuit which is packaged in a micro mode, the occupied area of devices can be further reduced, and system integration is facilitated.
Example 4
As shown in fig. 6, the sine-gated detector avalanche signal processing system further includes a counter S1, and an output terminal of a threshold discriminator D1 in the sine-gated detector avalanche signal processing circuit is connected to the counter S1. The avalanche signal is screened by a threshold discriminator D1 and then a digital pulse signal which is adapted to a rear-end counter S1 is output.
The above examples are only intended to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. A sine gate control detector avalanche signal processing system is used for processing output signals of a single photon avalanche diode in a sine gate control detector and comprises a sine gate control detector avalanche signal processing circuit, and is characterized in that a band rejection filter of the sine gate control detector avalanche signal processing circuit is cascaded by adopting a multi-stage microstrip line filter, the multi-stage microstrip line filter is directly printed on a redistribution layer substrate, and other devices of the sine gate control detector avalanche signal processing circuit are packaged on the redistribution layer substrate; the sine gate-controlled detector avalanche signal processing circuit comprises a first band-stop filter, a first low-pass filter, a first high-speed broadband amplifier, a gain matching circuit, a second high-speed broadband amplifier, a second low-pass filter, a second band-stop filter and a threshold discriminator which are connected in sequence, wherein the input end of the first band-stop filter is used as the input end of an avalanche signal, the first band-stop filter and the second band-stop filter are cascaded by adopting multi-stage microstrip line filters, and the first low-pass filter, the first high-speed broadband amplifier, the gain matching circuit, the second high-speed broadband amplifier, the second low-pass filter and the threshold discriminator are packaged on the redistribution layer substrate.
2. The sinusoidal-gated detector avalanche signal processing system of claim 1, wherein the redistribution layer substrate is ceramic.
3. The sine-gated detector avalanche signal processing system according to claim 1, wherein the gain matching circuit is a miniature packaged 50 ohm pi attenuator circuit.
4. The sine-gated detector avalanche signal processing system according to claim 1, wherein other components of the sine-gated detector avalanche signal processing circuit are packaged on the redistribution layer substrate by a system-in-package technique.
5. The sinusoidal gated detector avalanche signal processing system according to claim 1, wherein several pads are provided under the redistribution layer substrate.
6. The sinusoidal-gated detector avalanche signal processing system according to claim 1, further comprising a package enclosure plated with a shielding material, said sinusoidal-gated detector avalanche signal processing circuitry and redistribution layer substrate being enclosed within said package enclosure.
7. The sinusoidal-gated detector avalanche signal processing system according to claim 6, wherein the shielding material is metal.
8. The sinusoidal gated detector avalanche signal processing system according to claim 7 wherein the metallic shielding material is any one of copper foil, aluminum foil or PUE-2R type liquid energy absorbing paint.
9. The sine-gated detector avalanche signal processing system of claim 1, further comprising a counter, an output of said sine-gated detector avalanche signal processing circuit being connected to said counter.
10. The method for processing avalanche signals by using the sine-gated detector avalanche signal processing system according to any one of claims 1 to 9, wherein the sine-gated detector avalanche signal processing system inputs a signal mixed with avalanche signal and sine noise, and the avalanche signal is processed by the sine-gated detector avalanche signal processing circuit to generate avalanche signals meeting the amplitude requirement.
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