CN113121224B - Preparation method of annular high-density tantalum pentoxide coating material - Google Patents
Preparation method of annular high-density tantalum pentoxide coating material Download PDFInfo
- Publication number
- CN113121224B CN113121224B CN202110408174.1A CN202110408174A CN113121224B CN 113121224 B CN113121224 B CN 113121224B CN 202110408174 A CN202110408174 A CN 202110408174A CN 113121224 B CN113121224 B CN 113121224B
- Authority
- CN
- China
- Prior art keywords
- tantalum pentoxide
- coating material
- annular
- density
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention provides a preparation method of a ring-shaped high-density tantalum pentoxide coating material, which mainly comprises the following steps: (1) putting tantalum pentoxide powder raw materials into a ring-shaped die, and forming into a ring-shaped blank by adopting isostatic cool pressing; (2) machining the obtained annular blank into an annular tantalum oxide intermediate product; (3) transferring the annular tantalum oxide intermediate product into a high-temperature furnace for sintering densification to obtain a white annular high-density tantalum pentoxide coating material; (4) and carrying out high-temperature treatment on the white annular high-density tantalum pentoxide coating material under a vacuum condition to obtain a gray or black annular high-density tantalum pentoxide coating material. The tantalum pentoxide coating material prepared by the preparation method has simple preparation process, and the obtained tantalum pentoxide coating material has relative density of more than 90 percent (theoretical density is 8.8 g/cm) 3 Calculation), and, the coating process is stable, avoids appearing the gassing volume in the coating process big and splash scheduling problem.
Description
Technical Field
The invention belongs to the technical field of functional materials, and particularly relates to a preparation method of a ring-shaped high-density tantalum pentoxide coating material.
Background
Tantalum pentoxide (Ta) 2 O 5 ) Has a melting point of 1800 ℃ and excellent optical properties, and has a high refractive index for both visible light and near infrared spectra. The tantalum pentoxide coating material can be prepared into Ta with high refractive index by using a physical vapor deposition method 2 O 5 Film, Ta obtained 2 O 5 Spectral transmission of thin filmsIn the range of 0.35-7 microns, with a refractive index n of 2.05(550 nm). Moreover, the physical and chemical properties of the film layer are stable, and the film layer can be mixed with SiO 2 And the materials with high refractive index such as an antireflection film, a reflecting film, an optical filter and the like are prepared by matching.
With the popularization and application of the 5G technology, the data transmission amount is increasing continuously, and further improvement of the data transmission amount in the optical fiber is required. Wavelength Division Multiplexing (WDM) is one of the techniques for increasing the amount of data transmission, and the optical filter used therein generally uses Ta 2 O 5 With SiO 2 The method is realized by alternate plating on a substrate, wherein, CWDM needs to plate dozens of layers, DWDM needs to plate hundreds of layers, and the requirement on the film layer is very strict. Thus, Ta is conventionally prepared 2 O 5 The material loading of the acupuncture point crucible used in the film is too small to meet the requirement of coating materials for coating hundreds of films under the condition of film coating.
And, in a conventional manner, Ta 2 O 5 The film material is prepared by reacting Ta 2 O 5 The powder is formed, granulated, sintered and screened to prepare a granular coating material with a certain specification, namely the existing Ta 2 O 5 The particle diameter of the granular film material is generally 1-3mm, the relative density is generally less than 85 percent (the theoretical density is 8.8 g/cm) 3 Calculation). However, with Ta 2 O 5 When the particle film material is coated, in order to eliminate residual gas in the material, form a flat surface and improve the stability of the coating process, the particle coating material needs to be pre-melted before formal coating. Because the electron beam heating premelting is local heating, the material can not be completely melted at one time, and the premelting needs to be carried out in a small quantity of times and slow feeding modes, so that a large amount of time is needed for premelting the material, which usually needs more than 6 hours, and the utilization rate and the production efficiency of equipment are greatly reduced.
Disclosure of Invention
For solving the problem of Ta in the prior art 2 O 5 When the particles are used as coating materials, the problems of low production equipment efficiency and the like caused by repeated feeding, repeated premelting and longer premelting time are solved, and the invention provides a ring-shaped high-density tantalum pentoxide coating materialA method of preparation, the method comprising the steps of:
step 1: loading tantalum pentoxide powder raw materials into a ring-shaped die, and forming into a ring-shaped blank by adopting isostatic cool pressing;
step 2: machining the blank obtained in the step 1 into an annular tantalum oxide intermediate product;
and step 3: transferring the annular tantalum oxide intermediate product obtained in the step (2) into a high-temperature furnace for sintering densification to obtain a white annular high-density tantalum pentoxide coating material;
and 4, step 4: and (4) carrying out high-temperature treatment on the white annular high-density tantalum pentoxide coating material obtained in the step (3) under a vacuum condition to obtain a gray or black annular high-density tantalum pentoxide coating material.
Preferably, in the step 1, the powder particle size D50 of the tantalum pentoxide raw material is less than 10 μm, and the purity is greater than 99.9%.
Preferably, in the step 2, the pressure of the cold isostatic pressing is 50-220 Mpa.
Preferably, in the step 2, the preferred pressure for the cold isostatic pressing is 100 to 200 MPa.
Preferably, in the step 2, the blank body is machined by turning or grinding.
Preferably, in the step 3, the high-temperature furnace is any one of a muffle furnace, a silicon-carbon furnace and a silicon-molybdenum furnace; the sintering densification temperature is 1200-1700 ℃, and the sintering densification time is 2-10 h.
Preferably, in the step 3, the preferred temperature for the sintering densification is 1400-1600 ℃, and the preferred time for the sintering densification is 4-8 h.
Preferably, in the step 4, the vacuum condition is that the vacuum degree is less than 1000Pa, the temperature of the high-temperature treatment is 1200-1800 ℃, and the time of the high-temperature treatment is 2-20 h.
Preferably, in the step 4, the preferred temperature of the high-temperature treatment is 1400-1600 ℃, and the preferred time of the high-temperature treatment is 8-15 h.
Compared with the prior art, the invention has the following advantages:
(1) according to the invention, the annular die is designed and used, so that the annular coating material can be directly obtained, the waste of the material in the middle part caused by cutting in a large target material is not needed, and the material utilization rate is improved.
(2) The invention leads Ta to be formed by cold isostatic pressing 2 O 5 The contact mode between the powder is changed from point contact to surface contact, thereby reducing the diffusion resistance during sintering and being beneficial to high-temperature sintering densification of the material.
(3) The invention controls the sintering densification process to ensure that the growth speed of air holes is higher than the growth speed of crystal grains, thereby removing closed air holes in the material and obtaining the annular tantalum pentoxide coating material with high density and low closed air holes, wherein the relative density of the annular tantalum pentoxide coating material is higher than 90 percent (the theoretical density is 8.8 g/cm) 3 Calculated), the closed porosity is less than 2%, thereby realizing coating under the condition that the coating material is not completely pre-melted. In addition, the problems of large air discharge amount, splashing and the like can not occur in the film coating process.
Drawings
FIG. 1 is a flow chart of a method for preparing a ring-shaped high-density tantalum pentoxide coating material according to an embodiment of the invention;
FIG. 2 shows a ring-shaped high-density tantalum pentoxide coating material provided by an embodiment of the invention;
FIG. 3 shows the result of XRD analysis of the ring-type high-density tantalum pentoxide coating material provided by the embodiment of the invention.
Detailed Description
The following examples are provided to further understand the present invention, not to limit the scope of the present invention, but to provide the best mode, not to limit the content and the protection scope of the present invention, and any product similar or similar to the present invention, which is obtained by combining the present invention with other prior art features, falls within the protection scope of the present invention.
The specific experimental procedures or conditions are not indicated in the examples and can be performed according to the procedures or conditions of the conventional experimental procedures described in the prior art in this field. The reagents and other instruments used are not indicated by manufacturers, and are all conventional reagent products which can be obtained commercially.
For solving the problem of Ta prepared by using the traditional technology 2 O 5 The problem that the efficiency of production equipment is low and the like caused by repeated feeding, repeated premelting and longer premelting time when the granular coating material is used for coating is solved, and the technical concept for preparing the annular high-density tantalum pentoxide coating material provided by the embodiment of the invention is as follows: the tantalum pentoxide powder with high purity and high activity is used as a raw material, and through cold isostatic pressing, the contact area between the powder is increased, and the diffusion resistance during sintering is reduced, so that sintering densification is facilitated. The machining size is designed by controlling the sintering shrinkage, and after the annular blank is obtained by machining, the growth speed of pores is higher than the growth speed of crystal grains by controlling a high-temperature sintering process, so that closed pores in the material are eliminated, and the annular tantalum pentoxide coating material with high density and low closed pores is obtained. Thereby preparing Ta compared with the prior art 2 O 5 The granular coating material has a series of advantages (for example, compared with the prior art which adopts the tantalum pentoxide granular coating material to coat the film, the annular Ta provided by the invention 2 O 5 When the coating material is used for coating, repeated feeding and premelting are avoided, and Ta-like materials can not appear 2 O 5 The problems of large air discharge amount, splashing and the like caused by incomplete premelting of the particle coating material; meanwhile, the tantalum pentoxide coating material prepared by the method has high material density and low closed porosity, and the relative density of the tantalum pentoxide coating material is more than 90 percent (the theoretical density is 8.8 g/cm) 3 Calculated), closed porosity less than 2%). Based on the technical concept, the specific content of the embodiment of the invention is as follows:
the embodiment of the invention provides a preparation method of a ring-shaped high-density tantalum pentoxide coating material, which comprises the following steps as shown in figure 1:
step 1 (S11): putting tantalum pentoxide powder raw materials into a ring-shaped die, and forming into a ring-shaped blank by adopting isostatic cool pressing;
step 2 (S12): machining the blank obtained in the step 1 into a ring-shaped tantalum oxide intermediate product;
step 3 (S13): transferring the annular tantalum oxide intermediate product obtained in the step (2) into a high-temperature furnace for sintering densification to obtain a white annular high-density tantalum pentoxide coating material;
step 4 (S14): and (4) carrying out high-temperature treatment on the white annular high-density tantalum pentoxide coating material obtained in the step (3) under a vacuum condition to obtain a gray or black annular high-density tantalum pentoxide coating material.
Preferably, in step 1, the powder particle size D50 of the tantalum pentoxide raw material is less than 10 μm, and the purity is more than 99.9%.
In specific implementation, the tantalum pentoxide with the powder granularity of D50 less than 10 mu m and the purity of more than 99.9 percent is selected as the raw material, so that the coating material with high density and high purity can be obtained through the subsequent preparation process.
Preferably, in step 2, the pressure of the cold isostatic pressing is 50-220 Mpa.
In specific implementation, the tantalum pentoxide powder raw material is subjected to cold isostatic pressing to form Ta 2 O 5 The contact mode among the powders is changed from point contact to surface contact, thereby reducing the diffusion resistance during sintering and being beneficial to the subsequent high-temperature sintering densification of the materials.
Preferably, in the step 2, the preferred pressure for cold isostatic pressing is 100 to 200 MPa.
Preferably, in step 2, the blank machining mode is turning or grinding.
Preferably, in step 3, the high-temperature furnace is any one of a muffle furnace, a silicon-carbon furnace and a silicon-molybdenum furnace; the sintering densification temperature is 1200-1700 ℃, and the sintering densification time is 2-10 h.
When the method is specifically implemented, the growth speed of pores in the green body is higher than the growth speed of crystal grains by setting the high temperature of 1200-1700 ℃, so that closed pores in the green body material are eliminated, and the green body is sintered and densified.
Preferably, in step 3, the preferred temperature for sintering densification is 1400-1600 ℃, and the preferred time for sintering densification is 4-8 h.
Preferably, in step 4, the vacuum condition is that the vacuum degree is less than 1000Pa, the temperature of the high-temperature treatment is 1200-1800 ℃, and the time of the high-temperature treatment is 2-20 h.
Preferably, in step 4, the preferred temperature of the high temperature treatment is 1400-1600 ℃, and the preferred time of the high temperature treatment is 8-15 h.
In order to make the technical personnel in the field understand the invention better, the preparation method of the ring-shaped high-density tantalum pentoxide coating material provided by the invention is illustrated by specific examples.
Example 1:
by using Ta 2 O 5 The powder is taken as a raw material, is filled into a die with the inner diameter of 180mm and the outer diameter of 300mm, is machined into an annular blank with the inner diameter of 190mm, the outer diameter of 270mm and the thickness of 25mm after being formed by cold isostatic pressing at 150MPa, and is sintered in a silicon-molybdenum furnace at 1500 ℃ for 6 hours; then the temperature is kept for 15 hours at 1600 ℃ of vacuum treatment temperature, and the vacuum degree is less than 1000 Pa. The obtained dark gray annular tantalum pentoxide coating material is shown in figure 2; XRD analysis results are shown in figure 3; the purity analysis results are shown in table 1. The density (GB/T21650.1-2008) of the annular tantalum pentoxide coating material prepared in the example was measured by an American Mack AutoPore IV 9500 mercury porosimeter, and the result was 8.34g/cm 3 (ii) a The electron beam evaporation coating is carried out by adopting a ZZS-900 vacuum coating machine, the speed and the vacuum degree in the coating process are stable, and no material spraying phenomenon exists in the coating process.
As shown in FIG. 2, the ring-shaped high-density tantalum pentoxide coating material prepared in this example is in a dark gray ring shape. FIG. 3 shows the results of XRD analysis of tantalum pentoxide crystals obtained in examples of the present invention.
TABLE 1 shows the result of analyzing the purity of the ring-type high-density tantalum pentoxide coating material prepared in example 1
The test basis of the purity test is as follows:
Al，Cr，Cu，Fe，Mg，Mn，Nb，Ni，Pb，Sb，Si，Ti，V，Zn：ICP-MS(QB-YQ-76-2019)。
Ca：ICP-MS。
example 2:
by using Ta 2 O 5 The powder is taken as a raw material, is filled into a die with the inner diameter of 100mm and the outer diameter of 200mm, is machined into an annular blank with the inner diameter of 110mm, the outer diameter of 180mm and the thickness of 25mm after being formed by isostatic cool pressing at 100MPa, and is sintered in a silicon-carbon furnace at 1400 ℃ for 4 hours; then the temperature is kept for 8 hours at the vacuum treatment temperature of 1500 ℃, and the vacuum degree is less than 1000 Pa. Obtaining the gray tantalum pentoxide annular coating material.
In embodiment 2 of the present invention, XRD analysis results, purity analysis results, and density test results of the obtained tantalum pentoxide annular coating material and the tantalum pentoxide annular coating material were the same as those of example 1, and are not repeated.
Example 3:
by using Ta 2 O 5 The powder is taken as a raw material, is put into a die with the inner diameter of 250mm and the outer diameter of 400mm, is machined into an annular blank with the inner diameter of 260mm, the outer diameter of 350mm and the thickness of 30mm after being formed by cold isostatic pressing at 200MPa, and is sintered in a silicon-carbon furnace at 1600 ℃ for heat preservation for 8 hours; then the temperature is kept for 20 hours at the vacuum treatment temperature of 1700 ℃, and the vacuum degree is less than 1000 Pa. Obtaining the black annular tantalum pentoxide annular coating material.
In embodiment 3 of the present invention, XRD analysis results, purity analysis results, and density test results of the obtained tantalum pentoxide annular coating material and the tantalum pentoxide annular coating material are the same as those of example 1, and are not repeated.
It should be noted that the steps and methods in the embodiments of the present application are not limited to the corresponding embodiments, and the details of the operations and the cautions of the embodiments are all corresponding to each other.
The applicant states that the present invention is illustrated by the detailed process flow of the present invention through the above examples, but the present invention is not limited to the above detailed process flow, that is, it does not mean that the present invention must rely on the above detailed process flow to be implemented. It should be understood by those skilled in the art that any simple modifications, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
For simplicity of explanation, the method embodiments are shown as a series of acts or combinations, but those skilled in the art will appreciate that the present invention is not limited by the order of acts, as some steps may, in accordance with the present invention, occur in other orders and/or concurrently. Further, those skilled in the art will appreciate that the embodiments described in the specification are preferred embodiments and that the acts and elements referred to are not necessarily required to practice the invention.
The above detailed description is provided for the preparation method of the low-temperature tantalum pentoxide coating material provided by the invention, and the principle and the implementation mode of the invention are explained by applying specific examples, and the description of the above examples is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (4)
1. A preparation method of a ring-shaped high-density tantalum pentoxide coating material is characterized by comprising the following steps:
step 1: putting tantalum pentoxide powder raw materials into a ring-shaped die, and forming into a ring-shaped blank by adopting isostatic cool pressing;
step 2: machining the blank obtained in the step 1 into a ring-shaped tantalum oxide intermediate product;
and step 3: transferring the annular tantalum oxide intermediate product obtained in the step (2) into a high-temperature furnace for sintering densification to obtain a white annular high-density tantalum pentoxide coating material, wherein the sintering densification temperature is 1500 ℃, and the sintering densification time is 6 h;
and 4, step 4: carrying out high-temperature treatment on the white annular high-density tantalum pentoxide coating material obtained in the step (3) under a vacuum condition to obtain a gray or black annular high-density tantalum pentoxide coating material;
wherein the powder particle size D50 of the tantalum pentoxide raw material is less than 10 μm;
the pressure of the cold isostatic pressing is 150 MPa;
the inner diameter of the annular mold is 180mm, and the outer diameter of the annular mold is 300 mm;
the high-temperature treatment temperature is 1600 ℃, and the high-temperature treatment time is 15 h;
the density of the annular high-density tantalum pentoxide coating material is 8.34g/cm 3 The closed porosity is less than 2%.
2. The method of claim 1, wherein the tantalum pentoxide starting material is greater than 99.9% pure in step 1.
3. The preparation method according to claim 1, wherein in the step 2, the green body is machined by turning or grinding.
4. The production method according to claim 1, wherein in the step 3, the high-temperature furnace is any one of a muffle furnace, a silicon-carbon furnace and a silicon-molybdenum furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110408174.1A CN113121224B (en) | 2021-04-15 | 2021-04-15 | Preparation method of annular high-density tantalum pentoxide coating material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110408174.1A CN113121224B (en) | 2021-04-15 | 2021-04-15 | Preparation method of annular high-density tantalum pentoxide coating material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113121224A CN113121224A (en) | 2021-07-16 |
| CN113121224B true CN113121224B (en) | 2022-09-06 |
Family
ID=76776887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110408174.1A Active CN113121224B (en) | 2021-04-15 | 2021-04-15 | Preparation method of annular high-density tantalum pentoxide coating material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113121224B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1952204A (en) * | 2005-10-20 | 2007-04-25 | 北京有色金属研究总院 | Preprocessed optical coating materials and preprocessed method thereof |
| CN105132871A (en) * | 2015-09-18 | 2015-12-09 | 河北汉光重工有限责任公司 | Plating method for laser high-reflective film |
| CN105986316A (en) * | 2015-01-27 | 2016-10-05 | 常州瞻驰光电科技有限公司 | Tantalum oxide polycrystal film-coated material and growth method of same |
| CN106904967A (en) * | 2017-02-21 | 2017-06-30 | 成都超纯应用材料有限责任公司 | A kind of high density tantalum pentoxide film preparation method for material |
| CN112110725A (en) * | 2020-09-01 | 2020-12-22 | 有研资源环境技术研究院(北京)有限公司 | High-density annular oxide coating material and preparation method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989673A (en) * | 1997-06-30 | 1999-11-23 | Sony Corporation | Caromium-tantalum oxides (Cr-TaOx), sputtering targets and thin film seedlayer/sublayers for thin film magnetic recording media |
| DE102014110435B4 (en) * | 2014-07-24 | 2018-04-05 | Sindlhauser Materials Gmbh | Tantalum oxide material, its production process and use |
| CN104831245A (en) * | 2015-05-29 | 2015-08-12 | 西北有色金属研究院 | Hot isostatic pressing production method of tubular molybdenum alloy sputtering target |
| CN107061170A (en) * | 2017-02-21 | 2017-08-18 | 湘潭大学 | On-bladed wind-driven generator |
| CN108002815B (en) * | 2017-11-29 | 2021-02-02 | 株洲冶炼集团股份有限公司 | Preparation method of tubular ITO target material |
| CN108623298A (en) * | 2018-07-04 | 2018-10-09 | 郑州大学 | A kind of degreasing sintered integral preparation method of high density tin indium oxide tubular target |
-
2021
- 2021-04-15 CN CN202110408174.1A patent/CN113121224B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1952204A (en) * | 2005-10-20 | 2007-04-25 | 北京有色金属研究总院 | Preprocessed optical coating materials and preprocessed method thereof |
| CN105986316A (en) * | 2015-01-27 | 2016-10-05 | 常州瞻驰光电科技有限公司 | Tantalum oxide polycrystal film-coated material and growth method of same |
| CN105132871A (en) * | 2015-09-18 | 2015-12-09 | 河北汉光重工有限责任公司 | Plating method for laser high-reflective film |
| CN106904967A (en) * | 2017-02-21 | 2017-06-30 | 成都超纯应用材料有限责任公司 | A kind of high density tantalum pentoxide film preparation method for material |
| CN112110725A (en) * | 2020-09-01 | 2020-12-22 | 有研资源环境技术研究院(北京)有限公司 | High-density annular oxide coating material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113121224A (en) | 2021-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113213915B (en) | Preparation method of low-temperature trititanium pentoxide crystal coating material | |
| JP2012031508A (en) | Cu-Ga ALLOY TARGET MATERIAL AND METHOD FOR MANUFACTURING THE SAME | |
| US20120009374A1 (en) | Hybrid Silicon Wafer and Method of Producing the Same | |
| US20110284364A1 (en) | Aluminum Doped Zinc Oxide Sputtering Targets | |
| CN112723863A (en) | Manufacturing method of advanced-generation TFT-grade fine-grain ITO target | |
| JP5969493B2 (en) | Sputtering target and manufacturing method thereof | |
| CN108623287A (en) | A kind of short flow process of indium gallium zinc sintered body | |
| CN113121224B (en) | Preparation method of annular high-density tantalum pentoxide coating material | |
| TW201202168A (en) | Zinc oxide sintered tablet and manufacturing method thereof | |
| JP2012201948A (en) | Cu-Ga ALLOY SPUTTERING TARGET | |
| CN106587940A (en) | High-purity compact magnesium oxide target material and preparation method thereof | |
| CN112624741B (en) | Method for preparing high-purity magnesia ceramic setter plate green body through tape casting | |
| CN104487618B (en) | Crucible for producing oxide ceramic monocrystalline | |
| CN114990499A (en) | Preparation method of molybdenum alloy target | |
| JP2023512126A (en) | Manufacturing method of vanadium tungsten alloy target material | |
| JP4383062B2 (en) | Method for producing porous silicon carbide sintered body | |
| CN115974552A (en) | Preparation method of conductive lithium tantalate target for magnetron sputtering | |
| JP2012211382A (en) | METHOD OF MANUFACTURING Cu-Ga ALLOY SPUTTERING TARGET AND THE Cu-Ga ALLOY SPUTTERING TARGET | |
| CN105603374A (en) | Method for preparing Si3N4 film on polycrystalline silicon ingot cast crucible | |
| CN108002389B (en) | The method and silicon powder of zinc bismuth alloy coated Si magnesium granules preparation foam-like silicon powder | |
| CN110845229B (en) | LaBiO3Film, LaBiO3Ceramic target material and preparation method thereof | |
| TW201443250A (en) | Cu-Ga alloy sputtering target, cast object for the sputtering target, and manufacturing method thereof | |
| CN108017057B (en) | The method and silicon powder of tin-indium alloy coated Si magnesium granules preparation foam-like silicon powder | |
| JP2017193478A (en) | Oxide sintered body and sputtering target, and methods for producing same | |
| TWI720111B (en) | Method of producing cu-ga alloy sputtering target and cu-ga alloy sputtering target |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |