CN113113534A - Gating material, gating device and memory - Google Patents
Gating material, gating device and memory Download PDFInfo
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- CN113113534A CN113113534A CN202110296998.4A CN202110296998A CN113113534A CN 113113534 A CN113113534 A CN 113113534A CN 202110296998 A CN202110296998 A CN 202110296998A CN 113113534 A CN113113534 A CN 113113534A
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- 239000000463 material Substances 0.000 title claims abstract description 144
- 125000004429 atom Chemical group 0.000 claims abstract description 196
- 125000004434 sulfur atom Chemical group 0.000 claims abstract description 152
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 132
- 239000002019 doping agent Chemical group 0.000 claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 125000004437 phosphorous atom Chemical group 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 abstract description 27
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract description 15
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052711 selenium Inorganic materials 0.000 abstract description 14
- 229910052714 tellurium Inorganic materials 0.000 abstract description 14
- 150000001875 compounds Chemical class 0.000 description 49
- 239000000758 substrate Substances 0.000 description 28
- 229910052799 carbon Inorganic materials 0.000 description 13
- 150000001721 carbon Chemical group 0.000 description 12
- 238000000034 method Methods 0.000 description 12
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 11
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- 229910052710 silicon Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
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- 230000008569 process Effects 0.000 description 4
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- 230000008901 benefit Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
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- 229910004166 TaN Inorganic materials 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 2
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- 239000011669 selenium Substances 0.000 description 2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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Abstract
The embodiment of the application provides a gating material, a gating tube device and a memory, wherein the gating material comprises sulfur atoms and doping atoms which are combined with the sulfur atoms in a covalent bond mode. The sulfur atom is positioned in the third period of the periodic table, the selenium atom is positioned in the fourth period of the periodic table, the tellurium atom is positioned in the fifth period of the periodic table, and the sulfur atom has smaller atomic radius compared with the tellurium atom or the selenium atom, so that the sulfur atom can form stronger covalent bond with the doping atom, and the corresponding gating material containing the sulfur atom has better stability and larger on-state current.
Description
Technical Field
The present application relates to the field of electronic technologies, and in particular, to a gate material, a gate transistor device, and a memory.
Background
The memory is composed of a plurality of memory cells, each of which has a matrix structure and includes an OTS (Ovonic threshold switch) for preventing an erroneous operation and a leakage current, and an influence on a neighboring non-operating cell. The OTS has the performance of a gate tube, namely, under the condition that the applied voltage reaches the threshold voltage, the OTS can generate a large opening current Ion，IonFor driving the memory cell connected thereto; and in the case where the applied voltage reaches 1/2 threshold voltage, the OTS is in an off state, thereby disconnecting the memory cell connected thereto. Memory cells connected to a value can be driven or disconnected by applying different voltages to the OTS.
At present, most of the materials for preparing the OTS adopt a material containing Te atoms or a material containing Se atoms, but the material containing Te atoms or the material containing Se atoms has poor stability and small on-state current.
Disclosure of Invention
In order to solve the problems in the prior art, embodiments of the present application illustrate a gate material, a gate transistor device, and a memory.
In a first aspect, an embodiment of the present application provides a gating material, including: sulfur atoms and dopant atoms; the sulfur atoms are covalently bonded to the dopant atoms, the gating material generates an electrical current when a first voltage is applied to the gating material, and no electrical current is generated by the gating material when a second voltage is applied to the gating material, the first voltage being greater than the second voltage.
In this implementation, the gating material includes a sulfur atom and a dopant atom covalently bonded to the sulfur atom. As the sulfur atom is positioned in the third period of the periodic table, the selenium atom is positioned in the fourth period of the periodic table, the tellurium atom is positioned in the fifth period of the periodic table, and the sulfur atom has smaller atomic radius compared with the tellurium atom or the selenium atom, the sulfur atom can form stronger covalent bond with the doping atom, and the corresponding gating material containing the sulfur atom has better stability and larger on-state current.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the gating material has a chemical formula S1-XMXS is a sulfur atom, M is a doping atom, and X is the atomic proportion of atoms.
In this implementation, the gating material has better stability.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the doping atoms include group iii atoms.
In this implementation, the stability of the gate material is further improved, and the on-state current is further increased. Because the third main group atom has smaller positive charge on the atomic nucleus compared with the atoms arranged on the right side of the third main group atom in the same period, the attraction force of the atomic nucleus of the third main group atom to the electron outside the nuclear core is smaller, the superposition of the electron cloud between the atomic nucleus of the third main group atom and the atomic nucleus of the sulfur atom, the formation of the covalent bond between the third main group atom and the sulfur atom, the stability of the covalent compound formed by the third main group atom and the sulfur atom is enhanced, and the on-state current is increased; the stability of the corresponding gating material is further improved, and the on-state current is further increased.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the doping atom is a boron atom B or an aluminum atom Al.
In this implementation, the stability of the gate material is further improved, and the on-state current is further increased. Because the atomic radius of the boron atom or the atomic radius of the aluminum atom is close to the atomic radius of the sulfur atom, the coincidence degree of electron clouds between the atomic nucleus of the boron atom or the atomic nucleus of the aluminum atom and the atomic nucleus of the sulfur atom is larger, the covalent bond between the boron atom or the aluminum atom and the sulfur atom is enhanced, the stability of a covalent compound formed by the boron atom or the aluminum atom and the sulfur atom is enhanced, and the on-state current is increased; the stability of the corresponding gating material is further improved, and the on-state current is further increased.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the doping atoms include atoms of a fifth main group.
In this implementation, the stability of the gate material is further improved, and the on-state current is further increased. As the fifth main group atom has a smaller atomic radius compared with the elements arranged on the left side of the fifth main group atom in the same period, the electron cloud density between the nucleus of the fifth main group atom and the nucleus of the sulfur atom is higher, the covalent bond between the fifth main group atom and the sulfur atom is enhanced, the stability of the covalent compound formed by the fifth main group atom and the sulfur atom is enhanced, and the on-state current is increased; the stability of the corresponding gating material is further improved, and the on-state current is further increased.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the doping atom is a nitrogen atom N or a phosphorus atom P.
In this embodiment, the stability of the gate material is further improved, and the on-state current is further increased, because the atomic radius of the phosphorus atom and the atomic radius of the nitrogen atom are close to the atomic radius of the sulfur atom in the atoms included in the fifth main group, the coincidence degree of the electron cloud between the nucleus of the phosphorus atom or the nucleus of the nitrogen atom and the nucleus of the sulfur atom is large, the covalent bond between the phosphorus atom or the nitrogen atom and the sulfur atom is enhanced, the stability of the covalent compound formed by the phosphorus atom or the nitrogen atom and the sulfur atom is enhanced, the on-state current is increased, the stability of the corresponding gate material is further improved, and the on-state current is further increased.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the doping atoms include atoms of a fourth main group.
In this implementation, the stability of the gate material is further improved, and the on-state current is further increased. Because the nucleus of the atom of the fourth main group has smaller positive charge compared with the atom of the fifth main group in the same period, the attraction force of the nucleus of the atom of the fourth main group to the electron outside the nucleus is smaller, the electron cloud between the nucleus of the atom of the fourth main group and the nucleus of the sulfur atom is overlapped, the formation of the covalent bond between the atom of the fourth main group and the sulfur atom is realized, furthermore, the atom radius of the atom of the fourth main group is smaller compared with the atom of the third main group in the same period, the electron cloud density between the nucleus of the atom of the fourth main group and the nucleus of the sulfur atom is higher, the covalent bond between the atom of the fourth main group and the sulfur atom is enhanced, the stability of the covalent compound formed by the atom of the fourth main group and the sulfur atom is enhanced, and the on-state current is increased; the stability of the corresponding gating material is further improved, and the on-state current is further increased.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the doping atom is a carbon atom C or a silicon atom Si.
In this implementation, the stability of the gating material is further improved. Because, among the atoms included in the fourth main group, the atomic radius of a carbon atom and the atomic radius of a silicon atom are close to the atomic radius of a sulfur atom, the coincidence degree of electron clouds between the nucleus of a carbon atom or the nucleus of a silicon atom and the nucleus of a sulfur atom is large, the covalent bond between a carbon atom or a silicon atom and a sulfur atom is enhanced, the stability of a covalent compound formed by a carbon atom or a silicon atom and a sulfur atom is enhanced, and the on-state current is increased; the stability of the corresponding gating material is further improved, and the on-state current is further increased.
In a second aspect, an embodiment of the present application provides a gate tube device, including: the first electrode and the second electrode are connected through the gating material, when a first voltage is applied to the gating material through the first electrode, the material generates current to enable the first electrode and the second electrode to be conducted, when a second voltage is applied to the gating material through the first electrode, no current is generated by the material, and the first electrode and the second electrode are disconnected.
In this implementation, the gating device has better stability, which is benefited by the gating material of the gating device disclosed herein including a sulfur atom. The sulfur atom is positioned in the third period of the periodic table, the selenium atom is positioned in the fourth period of the periodic table, the tellurium atom is positioned in the fifth period of the periodic table, and the sulfur atom has smaller atomic radius compared with the tellurium atom and the selenium atom, so that the sulfur atom and the doping atom can form stronger covalent bonds, and correspondingly, the gating material has better stability and larger on-state current; the gate tube device adopting the gate material has better stability and larger on-state current.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the method further includes: a substrate disposed on a lower surface of the first electrode.
In this implementation, the gate device further includes a substrate, and the substrate plays a role in supporting and protecting the first electrode.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the method further includes: an insulating layer disposed between the first electrode and the second electrode; the insulating layer is provided with a through hole; the gating material penetrates through the through hole.
In this implementation, the gate device further includes an insulating layer disposed on an outer surface of the gate material to protect the gate material.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the method further includes: an insulating layer; the section of the gating material in the vertical direction is in a T shape, and the gating material comprises: the device comprises a first sub-component and a second sub-component, wherein the first sub-component is horizontally arranged, and the upper surface of the second sub-component is connected with the lower surface of the first sub-component;
an insulating layer is arranged on the upper surface of the first electrode; the insulating layer is provided with a through hole, and the second sub-component penetrates through the through hole and is connected with the first electrode; the first sub-assembly is disposed on the upper surface of the insulating layer, and the second electrode is disposed on the upper surface of the first sub-assembly.
In this implementation, the gate device further includes an insulating layer disposed on an outer surface of the second sub-assembly to protect the second sub-assembly, and further, the insulating layer is disposed between the first sub-assembly and the first electrode to support the first sub-assembly.
With reference to the first aspect, in a first possible implementation manner of the first aspect, the method further includes: a substrate and an insulating layer, the substrate having conductivity;
the insulating layer is arranged on the upper surface of the substrate; the upper surface of the insulating layer is provided with a gating material;
the first electrode is partially arranged on the upper surface of the insulating layer, and is partially arranged on the upper surface of the gating material;
the second electrode is partially arranged on the upper surface of the insulating layer, and partially arranged on the upper surface of the gating material.
In the implementation mode, the gate device adopts the insulating material to isolate the substrate from the gate material, the substrate from the first electrode and the substrate from the first electrode, so that the problem of electric leakage can not occur even in the application scene of the substrate adopting the conductive material.
In a third aspect, an embodiment of the present application provides a memory, including a gate device and a memory cell connected to the gate device.
In the implementation mode, the memory has better stability, which benefits from better stability of the gate tube device contained in the memory.
In a fourth aspect, an embodiment of the present application provides a computer, where the computer includes the memory provided in the embodiment of the present application and a processor connected to the memory.
In this implementation, the computer has better stability, which benefits from better stability of the memory included in the computer.
In a fifth aspect, an embodiment of the present application provides a method for preparing a gating material, where the gating material provided in the embodiment of the present application is prepared by any one of chemical plating, magnetron sputtering, chemical vapor deposition, pulsed laser, atomic layer deposition, or electron beam evaporation.
In the implementation mode, the prepared gating material has better stability, and comprises a sulfur atom and a doping atom which is combined with the sulfur atom in a covalent bond mode. The sulfur atom is located in the third period of the periodic table, the selenium atom is located in the fourth period of the periodic table, the tellurium atom is located in the fifth period of the periodic table, and the sulfur atom has smaller atomic radius compared with the tellurium atom or the selenium atom, so that the sulfur atom can form stronger covalent bond with the doping atom, and the corresponding gating material containing the sulfur atom has better stability
In a sixth aspect, an embodiment of the present application provides a method for manufacturing a gate device, including preparing a gate material, a first electrode, and a second electrode provided in the embodiment of the present application;
and integrating the prepared gating material, the first electrode and the second electrode into a gating device.
In the implementation mode, the prepared gate tube device has better stability, and the gate material of the gate tube device prepared by the implementation mode comprises sulfur atoms. The sulfur atom is located in the third period of the periodic table, the selenium atom is located in the fourth period of the periodic table, the tellurium atom is located in the fifth period of the periodic table, and the sulfur atom has smaller atomic radius compared with the tellurium atom and the selenium atom, so that the sulfur atom and the doping atom can form stronger covalent bonds.
Drawings
FIG. 1 is a U-I curve of a compound in which sulfur atoms and carbon atoms form covalent bonds as disclosed in a possible embodiment;
FIG. 2 is a schematic diagram of a gate device according to one possible embodiment;
FIG. 3 is a schematic structural view of another gating device made using the gating tube material described above;
FIG. 4 is a schematic diagram of a gating device according to one possible embodiment;
FIG. 5 is a schematic diagram of a gating device according to an embodiment of the disclosure;
FIG. 6 is a schematic diagram of a gating device according to an embodiment of the disclosure;
fig. 7 is a schematic structural diagram of a gating device disclosed in a possible embodiment.
Detailed Description
The embodiment of the application provides a material for manufacturing a gate tube (hereinafter referred to as a gate material), the gate tube material comprises sulfur atoms and doping atoms, and the sulfur atoms and the doping atoms are combined in a covalent bond mode.
In this application, the gating material may generate a current when a first voltage is applied thereto, and may generate no current when a second voltage is applied thereto, wherein the first voltage is greater than the second voltage.
In the present application, a dopant atom is an atom that can form a covalent bond with a sulfur atom.
After a large number of experiments, the applicant finds a rule that a covalent compound obtained by combining a sulfur atom and a doping atom in a covalent bond mode has gate tube performance, namely the electrical performance of the covalent compound formed by the sulfur atom and the doping atom has nonlinear characteristics. In particular, in the covalency of sulfur atoms with doping atomsWhen the applied voltage of the compound reaches the threshold voltage, the covalent compound formed by the sulfur atom and the doping atom generates a large opening current Ion(ii) a And in the case that the voltage applied to the covalent compound formed by the sulfur atom and the doping atom is less than or equal to 1/2 threshold voltage, the covalent compound formed by the sulfur atom and the doping atom is in an insulating state, namely, the covalent compound formed by the sulfur atom and the doping atom generates little or no current.
Referring now to FIG. 1, FIG. 1 is a U-I curve of a covalent compound of sulfur atoms and carbon atoms, and it can be seen from FIG. 1 that a positive voltage applied to the covalent compound of sulfur atoms and carbon atoms reaches a threshold voltage (V)1) Or applying a negative voltage less than the threshold voltage (-V)1) In the case of (2) a covalent bond between the sulfur atom and the carbon atom would give rise to a very large opening current Ion(ii) a And a positive voltage of 1/2 or less is applied to the covalent compound formed by sulfur atom and carbon atom1/2) or applying a negative voltage greater than or equal to a threshold voltage (-V)1In the case of/2), the sulfur atom is in an insulating state from the carbon atom to form a covalent compound.
The dopant atom in this application includes an atom that can form a covalent bond with a sulfur atom. The doping atoms need to satisfy the following two conditions: (1) electrons with opposite spin directions can be formed between the doping atoms and the sulfur atoms, and only the electrons with opposite spin directions can be paired into a bond; (2) when the atomic orbitals of the dopant atoms and the sulfur atoms overlap each other, and the atomic orbitals of the dopant atoms and the sulfur atoms overlap each other, the maximum overlap condition must be satisfied, that is, the atomic orbitals of the dopant atoms and the sulfur atoms are always bonded in the direction of the maximum overlap of the atomic orbitals as much as possible.
The covalent bond is one of chemical bonds, and two bonding atoms share their outer electrons, thereby constituting a relatively stable electromagnetic force. The nature of the covalent bond is that the atomic orbitals of the two atoms that form the bond overlap, with high probability, and the electrical interaction between the extra-nuclear electrons between the nuclei of the two atoms and the two nuclei occurs.
In the present application, the electron outside the nucleus of two atoms may be referred to as an electron cloud, and the electron shared by two atoms may be referred to as a shared electron pair.
As a possible example, a polar covalent bond may be formed between the sulfur atom and the dopant atom. When different kinds of atoms form covalent bonds, because the electron attractive ability of the atomic nucleus of the atom is different, the electron cloud is biased to the side with strong electron attractive ability, the side with strong electron attractive ability shows negativity, the side with weak electron attractive ability shows positivity, and thus the electron cloud deviated covalent bonds are called polar covalent bonds. For example, a sulfur atom and a lead atom may form a polar covalent bond, and in a covalent compound formed by a sulfur atom and a lead atom, an electron cloud between the nucleus of the sulfur atom and the nucleus of the lead atom is biased toward the sulfur atom side, and the sulfur atom and the lead atom form a polar covalent bond.
As a possible example, a dative bond may be formed between the sulfur atom and the dopant atom. A dative bond is a special covalent bond, with one atom being supplied separately from a common electron pair required for the formation of a covalent bond by two atoms. For example, a sulfur atom and a zinc atom may form a coordinate bond, and in a covalent compound formed by a sulfur atom and a zinc atom, an electron pair shared between the nucleus of the sulfur atom and the nucleus of the atom is provided by the zinc atom, and the sulfur atom and the zinc atom form a coordinate bond.
In the case of the same kind of covalent bond, the smaller the radius of the atom forming the covalent bond, the higher the electron cloud density between the nuclei of the two atoms, the stronger the covalent bond formed by the two atoms, the stronger the stability of the covalent compound formed by the corresponding two atoms, and the larger the on-state current.
In the periodic table, the atomic radii of the same main group elements increase in order from top to bottom.
The gating material provided by the embodiment of the application has the following beneficial effects: compared with the gating material containing tellurium atoms or selenium atoms generally, the gating material provided by the embodiment of the application has better stability and larger on-state current, and the gating material provided by the embodiment of the application has the advantage that the gating material comprises sulfur atoms. Specifically, the sulfur atom is located in the third period of the periodic table, the selenium atom is located in the fourth period of the periodic table, the tellurium atom is located in the fifth period of the periodic table, and the sulfur atom has a smaller atomic radius compared with the tellurium atom or the selenium atom, so that the sulfur atom can form a stronger covalent bond with the doping atom.
As one way of achieving this, the gating material has the chemical formula S1-XMXThe S is a sulfur atom, the M is a doping atom, the X is the atomic ratio of the atoms, the X is a decimal number which is more than zero and less than 1, and the X can be 0.5 for example. The atomic ratio is the ratio of the number of atoms in the compound to the number of atoms contained in the compound.
In one embodiment, the dopant atoms comprise atoms of the third main group.
Generally, the larger the positive charge of the atomic nucleus of the doping atom, the greater the attraction of the doping atom to the extra-nuclear electrons, the smaller the electron cloud overlap between the atomic nucleus of the doping atom and the atomic nucleus of the sulfur atom, the weaker the covalent bond between the doping atom and the sulfur atom, the poorer the stability of the covalent compound formed by the corresponding doping atom and the sulfur atom, and the smaller the on-state current. The smaller the positive charge of the atomic nucleus of the doping atom is, the smaller the attraction of the doping atom to the electron outside the nucleus is, the larger the electron cloud superposed part between the atomic nucleus of the doping atom and the atomic nucleus of the sulfur atom is, the stronger the formation of the covalent bond between the doping atom and the sulfur atom is, the stronger the stability of the covalent compound formed by the corresponding doping atom and the sulfur atom is, and the larger the on-state current is.
In the periodic table of elements, the positive charges of the atomic nuclei of the elements in the same period increase in sequence from left to right.
The dopant atom may comprise a third main group atom as a feasible example, taking into account the effect of the positive charge of the nucleus of the dopant atom on the stability of the covalent compound formed by the dopant atom and the sulphur atom. As compared with the atoms arranged on the right side of the third main group atom in the same period, the third main group atom has smaller positive charge on the atomic nucleus, the attraction force of the atomic nucleus of the third main group atom to the electron outside the atomic nucleus is smaller, the superposition of the electron cloud between the atomic nucleus of the third main group atom and the atomic nucleus of the sulfur atom, the formation of the covalent bond between the third main group atom and the sulfur atom, the stability of the covalent compound formed by the third main group atom and the sulfur atom is enhanced, the on-state current is increased, the stability of the corresponding gating material is further improved, and the on-state current is further increased.
The doping atom may be a boron atom (B) or the aluminum atom (Al).
In general, the closer the atomic radius of the dopant atom is to the atomic radius of the sulfur atom, the larger the electron cloud overlap between the nucleus of the dopant atom and the nucleus of the sulfur atom, the stronger the formation of a covalent bond between the dopant atom and the sulfur atom, the stronger the stability of the covalent compound formed by the corresponding dopant atom and the sulfur atom, and the larger the on-state current. The larger the difference between the atomic radius of the doping atom and the atomic radius of the sulfur atom is, the smaller the electron cloud overlapping part between the atomic nucleus of the doping atom and the atomic nucleus of the sulfur atom is, the weaker the covalent bond between the doping atom and the sulfur atom is, the worse the stability of the covalent compound formed by the corresponding doping atom and the sulfur atom is, and the smaller the on-state current is.
In the periodic table of elements, the atomic radii of the same-period elements increase from top to bottom, and decrease from left to right.
The dopant atoms may include boron atoms or aluminum atoms among the third main group elements as a feasible example in consideration of the influence of the nuclear size of the dopant atoms on the stability of the covalent compound formed by the dopant atoms and the sulfur atoms.
Because the atomic radius of the boron atom or the atomic radius of the aluminum atom is close to the atomic radius of the sulfur atom, the coincidence degree of electron clouds between the atomic nucleus of the boron atom or the atomic nucleus of the aluminum atom and the atomic nucleus of the sulfur atom is larger, the covalent bond between the boron atom or the aluminum atom and the sulfur atom is enhanced, the stability of a covalent compound formed by the boron atom or the aluminum atom and the sulfur atom is enhanced, and the on-state current is increased; the stability of the corresponding gating material is further improved, and the on-state current is further increased.
In another embodiment, the dopant atoms may include atoms of the fifth main group.
In general, in a system of a covalent compound formed by a sulfur atom and a doping atom, the smaller the atomic radius of the doping atom, the higher the electron cloud density between the nucleus of the doping atom and the nucleus of the sulfur atom, the stronger the formation of a covalent bond between the doping atom and the sulfur atom, the stronger the stability of the covalent compound formed by the corresponding doping atom and the sulfur atom, and the larger the on-state current. The larger the atomic radius of the doping atom, the lower the electron cloud density between the nucleus of the doping atom and the nucleus of the sulfur atom, and the weaker the covalent bond formed by the doping atom and the sulfur atom, and correspondingly, the poorer the stability of the covalent compound formed by the doping atom and the sulfur atom, the smaller the on-state current.
In the periodic table of elements, the atomic radii of the elements in the same period decrease sequentially from left to right.
The dopant atoms may include a fifth main group atom as a feasible example in consideration of the influence of the atomic radius size of the dopant atoms on the stability of the covalent compound formed by the dopant atoms and the sulfur atom.
As the fifth main group atom has a smaller atomic radius compared with the elements arranged on the left side of the fifth main group atom in the same period, the electron cloud density between the nucleus of the fifth main group atom and the nucleus of the sulfur atom is higher, the covalent bond between the fifth main group atom and the sulfur atom is enhanced, the stability of the covalent compound formed by the fifth main group atom and the sulfur atom is enhanced, and the on-state current is increased; the stability of the corresponding gating material is further improved, and the on-state current is further increased.
Optionally, the doping atom of the fifth main group atom is a nitrogen atom (N) or a phosphorus atom (P).
In general, the closer the atomic radius of the dopant atom is to the atomic radius of the sulfur atom, the more stable the covalent compound formed by the dopant atom and the sulfur atom is, and the larger the on-state current is. The larger the difference between the atomic radius of the doping atom and the atomic radius of the sulfur atom, the worse the stability of the covalent compound formed by the corresponding doping atom and the sulfur atom, and the smaller the on-state current.
In the periodic table of elements, the atomic radii of the same-period elements increase from top to bottom, and decrease from left to right.
The doping atom may include a phosphorus atom or a nitrogen atom of the fifth main group element as a feasible example in consideration of the influence of the size of the nucleus of the doping atom on the stability of the covalent compound formed by the doping atom and the sulfur atom.
Among the atoms included in the fifth main group, the atomic radius of a phosphorus atom and the atomic radius of a nitrogen atom are close to the atomic radius of a sulfur atom, the degree of coincidence of electron clouds between the nucleus of the phosphorus atom or the nucleus of the nitrogen atom and the nucleus of the sulfur atom is large, the covalent bond between the phosphorus atom or the nitrogen atom and the sulfur atom is enhanced, the stability of a covalent compound formed by the phosphorus atom or the nitrogen atom and the sulfur atom is enhanced, and the on-state current is increased; the stability of the corresponding gating material is further improved, and the on-state current is further increased.
In another embodiment, the dopant atoms comprise atoms of the fourth main group.
Generally, the greater the positive charge of the atomic nucleus of the doping atom, the less stable the covalent compound formed by the doping atom and the sulfur atom; the smaller the positive charge of the atomic nucleus of the doping atom, the more stable the covalent compound formed by the doping atom and the sulphur atom. The smaller the atomic radius of the doping atom is, the stronger the stability of the covalent compound formed by the doping atom and the sulfur atom is; the larger the atomic radius of the doping atom, the less stable the covalent compound formed by the doping atom and the sulfur atom.
The dopant atom may comprise a fourth main group atom as a feasible example, taking into account the positive charge of the atomic nucleus of the dopant atom and the influence of the size of the dopant atom on the stability of the covalent compound formed by the dopant atom and the sulphur atom.
Compared with a fifth main group atom in the same period, the atomic nucleus of the fourth main group atom has smaller positive charge, the smaller attraction of the atomic nucleus of the fourth main group atom to an electron outside the nucleus is, the superposition of an electron cloud between the atomic nucleus of the fourth main group atom and the atomic nucleus of a sulfur atom, and the formation of a covalent bond between the fourth main group atom and the sulfur atom; the stability of the corresponding gating material is further improved, and the on-state current is further increased.
Alternatively, the doping atom may include a carbon atom (C) or a silicon atom (Si).
In general, the closer the atomic radius of the dopant atom is to the atomic radius of the sulfur atom, the more stable the covalent compound formed by the dopant atom and the sulfur atom is. The larger the difference between the atomic radius of the doping atom and the atomic radius of the sulfur atom, the less stable the covalent compound formed by the corresponding doping atom and the sulfur atom is. In the periodic table, the atomic radii of the same-main-group elements increase in order from top to bottom, and the atomic radii of the same-period elements decrease in order.
The doping atoms may include carbon atoms or silicon atoms among the elements of the main group as a feasible example in consideration of the influence of the size of the nucleus of the doping atom on the stability of the covalent compound formed by the doping atom and the sulfur atom.
Because the atomic radius of the carbon atom and the atomic radius of the silicon atom are close to the atomic radius of the sulfur atom in the atoms contained in the fourth main group, the coincidence degree of the electron cloud between the nucleus of the carbon atom or the nucleus of the silicon atom and the nucleus of the sulfur atom is large, the covalent bond between the carbon atom or the silicon atom and the sulfur atom is enhanced, the stability of the covalent compound formed by the carbon atom or the silicon atom and the sulfur atom is enhanced, and the on-state current is increased; the stability of the corresponding gating material is further improved, and the on-state current is further increased.
Fig. 2 is a schematic diagram of a gating device constructed using the gating tube material described above. The gate tube device may include a first electrode 21, a gate material 22, and a second electrode 23. Wherein, the upper surface of the first electrode 21 is provided with a gate material 22, and the upper surface of the gate material 22 is provided with a second electrode 23; the first electrode 21, the gate material 22, and the second electrode 23 are arranged in parallel.
FIG. 3 is a schematic representation of another alternative gating device constructed using the gating material described above, in this embodiment the upper surface of the first electrode 21 is provided with the gating material 22 and the upper surface of the gating material 22 is provided with the second electrode 23; the first electrode 21 is arranged at an angle to the second electrode 23. The degree of the included angle between the first electrode 21 and the second electrode 23 is not limited in the application, and the degree of the included angle between the first electrode 21 and the second electrode 23 can be set according to requirements in the process of practical application.
As one implementation, the cross section of the gate material 22 in the vertical direction may be smaller than the cross section of the first electrode 21 or the second electrode 23 in the vertical direction, so as to achieve the purpose of saving the gate material.
The first electrode and the second electrode are connected by a gate material. Under the condition that the voltage applied to the gate tube device reaches the threshold voltage, the gate material can generate a large opening current IonSo that the first and second electrodes are in a connected state, IonDriving a storage unit connected with the second electrode to work; when the gate device is applied with a voltage of 1/2 threshold voltage, the gate material is in an insulated state, and the first electrode and the second electrode are disconnected, so that current cannot be applied to the memory cell.
It is noted that fig. 2 and 3 are only exemplary to show the possible structures of two gate devices, and do not limit the scope of the present embodiment.
Embodiments of the present application provide gating device devices having improved stability, which may be facilitated by the gating material of the gating device disclosed herein including sulfur atoms. The sulfur atom is located in the third period of the periodic table, the selenium atom is located in the fourth period of the periodic table, the tellurium atom is located in the fifth period of the periodic table, and the sulfur atom has smaller atomic radius compared with the tellurium atom and the selenium atom, so that the sulfur atom and the doping atom can form stronger covalent bonds.
As a possible embodiment, the material of the first electrode may include: w, Al, Cu, Ru, Ti, Ta, Co, Mo, Ir, Ni, Nb, TiN, TaN, TiW, IrO2One or more of them. It should be noted that, the present embodiment is only an exemplary material for providing several first electrodes, and does not limit the scope of the present embodiment, and all materials that can perform a conductive function may be used as the material of the first electrode in the practical application process.
As a possible embodiment, the material of the second electrode may include: w, Al, Cu, Ru, Ti, Ta, Co, Mo, Ir, Ni, Nb, TiN, TaN, TiW, IrO2One or more of them. It should be noted that, the present embodiment is only exemplary to show several materials of the second electrode, and not to limit the scope of the present embodiment, and all materials that can perform a conductive function may be used as the material of the second electrode in the practical application process.
In some embodiments, the gate tube device may further include a substrate disposed on a surface of the first electrode to support and protect the first electrode. The gate device provided in this embodiment is further described with reference to the specific drawings.
Fig. 4 is a schematic structural diagram of a gate device disclosed in a possible embodiment, and it can be seen that the gate device may include: a first electrode 41, a gate material 42, a second electrode 43, and a substrate 44. In the figure, a substrate 44 is provided on the lower surface of the first electrode 41, and functions to support the first electrode 41; the upper surface of the first electrode 41 is provided with a gate material 42, and the upper surface of the gate material 42 is provided with a second electrode 43. It should be noted that fig. 4 is only an exemplary illustration of a possible structure of the gate transistor device, and does not limit the scope of the present embodiment.
As a possible implementation, the material of the substrate may include: silicon, silicon oxide, sapphire, silicon carbide and gallium nitride. It should be noted that the present embodiment is only exemplary to show several kinds of materials of the substrate, and not to limit the scope of the present embodiment, and all materials that can play a role of supporting and protecting the first electrode can be used as the material of the substrate in the practical application process.
In some embodiments, the gate tube device may further include: an insulating layer. The gate device provided in this embodiment is further described with reference to the specific drawings.
Fig. 5 is a schematic structural diagram of a gate device disclosed in a possible embodiment, and it can be seen that the gate device may include: a first electrode 51, a gate material 52, a second electrode 53, a substrate 54, and an insulating layer 55. In the figure, a substrate 54 is provided on the lower surface of the first electrode 51, and functions to support the first electrode 51; the upper surface of the first electrode 51 is provided with an insulating layer 45, and the insulating layer 55 is provided with a through hole (not numbered in the figure); a gate material 52 is disposed in the through hole, and the lower surface of the gate material is connected to the first electrode 51. The upper surface of the insulating layer 55 is provided with a second electrode 53; the second electrode 53 covers the through hole and is connected to the second surface of the gate material 52 disposed inside the through hole.
The gate tube device shown in this embodiment further includes an insulating layer disposed on an outer surface of the gate material to protect the gate material.
Fig. 6 is a schematic structural diagram of a gate device disclosed in a possible embodiment, and it can be seen that the gate device may include: a first electrode 61, a gate material 62, a second electrode 63, a substrate 64, and an insulating layer 65. In the figure, a substrate 64 is provided on the lower surface of the first electrode 61, and functions to support the first electrode 61; an insulating layer 65 is arranged on the upper surface of the first electrode 61, and the insulating layer 65 is provided with a through hole (not numbered in the figure); the cross section of the gate material 62 in the vertical direction is "T" shaped, and the gate material 62 includes: a first sub-component 621 and a second sub-component 622, wherein the first sub-component 621 is horizontally arranged, the upper surface of the second sub-component 622 is connected with the lower surface of the first sub-component 621, and the second sub-component 622 penetrates through the through hole and is connected with the first electrode 61; the first sub-member 621 is disposed on the upper surface of the insulating layer 65, and the second electrode 63 is disposed on the upper surface of the first sub-member 621.
The gate tube device shown in this embodiment further includes an insulating layer disposed on an outer surface of the second sub-assembly to protect the second sub-assembly, and further, the insulating layer is disposed between the first sub-assembly and the first electrode to support the first sub-assembly.
In an application scenario where the substrate is made of a conductive material, if the first electrode is directly disposed on the upper surface of the substrate, a problem of electric leakage may be caused.
Fig. 7 is a schematic diagram of a gate device disclosed in a possible embodiment, and it can be seen that the gate device may include: a first electrode 71, a gate material 72, a second electrode 73, a substrate 74 and an insulating layer 75, in this embodiment, the substrate 74 is made of a conductive material. In the figure, the upper surface of the substrate 74 is provided with the insulating layer 75; the upper surface of the insulating layer 75 is provided with a gate material 72; the first electrode 71 is partially disposed on the upper surface of the insulating layer 75, and partially disposed on the upper surface of the gate material 72; the second electrode 73 is partially disposed on the upper surface of the insulating layer 75, and partially disposed on the upper surface of the gate material 72.
The gate tube device shown in this embodiment adopts an insulating material to isolate the substrate from the gate material, the substrate from the first electrode, and thus the problem of electric leakage does not occur even in an application scenario of the substrate adopting a conductive material.
It is noted that fig. 5, 6, and 7 are merely exemplary to illustrate the possible configurations of several strobe devices, and do not limit the scope of the present embodiment.
The present application further provides a method for preparing a gating material, and specifically, the gating material shown in this embodiment may be prepared by any one of chemical plating, magnetron sputtering, chemical vapor deposition, pulsed laser, atomic layer deposition, or electron beam evaporation.
The application also provides a preparation method of the gating device, which comprises the following steps:
preparing a first electrode, a gating tube material and a second electrode;
and integrating the prepared first electrode gating material and the second electrode into a gating device.
The first electrode can be prepared by chemical plating, magnetron sputtering, chemical vapor deposition, pulsed laser, atomic layer deposition or electron beam evaporation as a feasible real-time mode.
The gating material shown in the present embodiment can be prepared by chemical plating, magnetron sputtering, chemical vapor deposition, pulsed laser, atomic layer deposition or electron beam evaporation as a feasible real-time method.
The second electrode can be prepared by chemical plating, magnetron sputtering, chemical vapor deposition, pulsed laser, atomic layer deposition or electron beam evaporation as a feasible real-time mode.
The memory comprises a gating tube device and a memory unit connected with the gating tube device.
As a possible embodiment, the memory may include a phase change memory, a resistance change memory, a magnetic memory, a ferroelectric memory, and the like. It is noted that the present embodiment is only a possible form of the exemplary memory, and does not limit the scope of the present embodiment.
The application also provides a computer, which is provided with the memory and the processor connected with the memory.
The computer related to the embodiment of the present application may be a mobile phone, a tablet computer, a notebook computer, an ultra-mobile personal computer (UMPC), a handheld computer, a netbook, a Personal Digital Assistant (PDA), a wearable terminal, a vehicle-mounted device, a virtual reality device, and the like, which is not limited in any way in the embodiment of the present application.
It should be understood that a plurality of the embodiments of the present application refers to two or more. In addition, it should be understood that in the description provided in the embodiments of the present application, the terms "first", "second", and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or order. The same and similar parts in the various embodiments of the present specification may be referred to each other, and the above embodiments do not limit the scope of the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle provided by the embodiments of the present application should be included in the scope of protection provided by the embodiments of the present application.
Claims (10)
1. A gating material, wherein the gating material comprises sulfur atoms and dopant atoms; the sulfur atoms are covalently bonded to the dopant atoms, the gating material generates an electrical current when a first voltage is applied to the gating material, and no electrical current is generated when a second voltage is applied to the gating material, the first voltage being greater than the second voltage.
2. The gating material of claim 1, wherein the gating material has a chemical formula S1-XMXS is a sulfur atom, M is a doping atom, and X is the atomic proportion of atoms.
3. The gating material of claim 1, wherein said dopant atoms are atoms of the third main group.
4. The gating material of claim 3, wherein said dopant atoms are boron atoms B or aluminum atoms Al.
5. The gating material of claim 1, wherein said dopant atoms are group iv atoms.
6. The gating material of claim 5, wherein said dopant atoms are carbon atoms C or silicon atoms Si.
7. The gating material of claim 1, wherein said dopant atoms are fifth main group atoms.
8. The gating material of claim 7, wherein said dopant atoms are nitrogen atoms N or phosphorus atoms P.
9. A gate tube device, comprising: the gating material of any one of claims 1 to 8, a first electrode and a second electrode, said first electrode and said second electrode being connected through said gating material, said material generating an electrical current when a first voltage is applied to said gating material through said first electrode, causing said first electrode and said second electrode to conduct, said material generating no electrical current when a second voltage is applied to said gating material through said first electrode, said first electrode and said second electrode being disconnected.
10. A memory comprising a plurality of memory cells, each memory cell connected to the gate device of claim 9, wherein a first voltage is applied to the first electrode, wherein the material generates a current to cause the first electrode to conduct with the second electrode and thereby conduct with the memory cell, wherein a second voltage is applied to the gate material via the first electrode, wherein no current is generated by the material, and wherein the first electrode is disconnected from the second electrode and thereby disconnected from the memory cell.
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