CN113105235A - Vo2陶瓷、高响应度的红外弱光探测器及其调控方法 - Google Patents

Vo2陶瓷、高响应度的红外弱光探测器及其调控方法 Download PDF

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CN113105235A
CN113105235A CN202110354810.7A CN202110354810A CN113105235A CN 113105235 A CN113105235 A CN 113105235A CN 202110354810 A CN202110354810 A CN 202110354810A CN 113105235 A CN113105235 A CN 113105235A
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杨晓磊
徐时清
朱宁宁
白功勋
谢杭清
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Abstract

本发明公开了一种VO2陶瓷、高响应度的红外弱光探测器及其调控方法。光敏半导体材料VO2陶瓷，采用微米级粒径的VO2粉剂，在保护气氛中400℃烧结制备获得。所述的VO2陶瓷作为光敏半导体，采用金属银制作阴阳电极；探测10mW的980nm红外光时，实现安培级的高光电流，实现不低于10A/W级的高响应度。驱动电压小于临界值时响应度较低；驱动电压高于临界值时，信号光照射下探测器由高阻态变为低阻态，电流大幅增大，获得高响应度；通过减小驱动电压至临界值之下，使探测器从低阻态恢复至高阻态；所述临界值由实验确定。本发明在进行红外探测时可实现高响应度，可在红外弱光探测、低亮度图像采集等方面获得应用。

Description

VO2陶瓷、高响应度的红外弱光探测器及其调控方法
技术领域
本发明涉及红外传感器领域，包括一种实现高响应度红外弱光探测的光电探测器的组成材料，及一种实现高响应度红外弱光探测的电压调控方法。
背景技术
红外传感器与红外成像技术已获得广泛应用，通过红外成像能完成很多可见光难以或无法实施的应用需求。
目前商业化的红外探测器材料很大比例基于铟、镓、砷、锑、汞、镉、碲、铅、硫、硒等元素组成的化合物半导体，例如砷化镓（GaAs）、锑化铟（InSb）、硫化铅（PbS）、硒化铅（PbSe）、铟镓砷（InGaAs）、碲镉汞（HgCdTe）等，存在毒性大、成本高等不足。目前在红外光波长1000nm左右，铟镓砷（InGaAs）图像传感器的感光度比较高，但是成本高昂，而具有成本优势的互补金属氧化物半导体（COMS）图像传感器采集的低亮度图像比较暗。因而，有必要提高金属氧化物半导体的红外探测性能，采用氧化钒（VOx）、三氧化二钛（Ti2O3）等半导体在红外弱光探测等更多红外传感应用情景中取代铟镓砷、碲镉汞等半导体。
氧化钒（VOx）辐射热计已在8～14μm的远红外传感上被广泛应用，但是在波长小于8μm的中短波红外波段的响应度低，仍不具有竞争能力。
发明内容
为了克服现有技术的不足，本发明的目的是提供VO2陶瓷、高响应度的红外弱光探测器及其调控方法，解决钒氧化物光探测器在中短波红外波段的响应度不高以及实现超低功率红外弱光探测的问题。
为了达到上述目的，本发明提出的技术方案如下：
一种光敏半导体材料VO2陶瓷，采用微米级粒径的VO2粉剂，在保护气氛中400℃烧结制备获得。
所述的VO2陶瓷，制备方法如下：
1）将市售VO2粉剂研磨至微米级粒径，然后加入VO2质量六分之一的甲胺碘（MAI），通过研磨混合均匀；
2）将步骤1）中制备的混合粉末以7MPa的压强压片；
3）将步骤2）中的VO2片放入通氩气的管式炉中，以6.7℃/min的速率升温至400℃，在400℃烧结5小时，然后以不大于3.4℃/min的速率降温至室温，获得VO2陶瓷片。
一种高响应度的VO2陶瓷红外弱光探测器，
采用所述的VO2陶瓷作为光敏半导体，采用金属银制作阴阳电极；
探测10mW的980nm红外光时，实现安培级的高光电流，实现不低于10A/W级的高响应度。
所述的高响应度的VO2陶瓷红外弱光探测器的电压调控方法，
驱动电压小于临界值时响应度较低；
驱动电压高于临界值时，信号光照射下探测器由高阻态变为低阻态，电流大幅增大，获得高响应度；
通过减小驱动电压至临界值之下，使探测器从低阻态恢复至高阻态；
所述临界值由实验确定。
本发明的有益效果是：
该VO2陶瓷光电探测器虽然在驱动电压小于临界值时响应度较低，但是当驱动电压大于临界值时可获得高响应度，从而实现高响应度的弱光探测。
附图说明
图1是实施例1中VO2陶瓷的X射线衍射（XRD）谱图；
图2是实施例1中VO2陶瓷的扫描电子显微镜（SEM）照片，(a)、(b)部分的放大倍数参见照片内的标尺，(c) 部分是实施例1中VO2陶瓷的X射线能量色散谱（EDS）分析图。
图3是实施例2中的高响应度的VO2陶瓷红外弱光探测器的电压调控方法示意图。
具体实施方式
下面对本发明的具体实施例以及附图进行详细说明，其中的实施例以及说明仅用于解释本发明，并不构成对本发明的不当限定。
实施例1 光敏半导体材料VO2陶瓷的制备与表征
对光敏半导体材料VO2陶瓷的一种具体制备步骤描述如下：
（1）将市售VO2粉剂研磨至微米级粒径，然后加入约为VO2质量六分之一的甲胺碘（MAI），通过研磨混合均匀；
（2）将步骤（1）中制备的混合粉末以约7MPa的压强压片；
（3）将步骤（2）中的VO2片放入通氩气的管式炉中，以约6.7℃/min的速率升温至400℃，在400℃烧结5小时，然后以不大于3.4℃/min的速率降温至室温，获得VO2陶瓷片。
如图1所示，对实施例1得到的VO2陶瓷片进行XRD测量，结果表明该VO2陶瓷的主要结构是VO2晶体。
如图2(a)、(b)所示，对实施例1得到的VO2陶瓷片进行SEM测量，结果表明该VO2陶瓷实施例的组成微晶的粒径为微米级；如图2(c)所示，对该VO2陶瓷实施例进行EDS测量，结果表明该VO2陶瓷实施例的组成元素主要为钒（V）与氧（O），含量分别为33.4%与66.5%左右，而黏结剂MAI只有微量残留。
实施例2 高响应度的VO2陶瓷红外弱光探测器的电压调控方法演示
采用实施例1所述的VO2陶瓷片作为光敏半导体，采用金属银制作阴阳电极，获得具有高响应度的VO2陶瓷红外弱光探测器。
如图3所示，对所述的高响应度的VO2陶瓷红外弱光探测器采用如下电压调控步骤，发现驱动电压临界值在10～15V之间。因为仪表的最大电流量程为100mA，所以图3中光电流被钳位于100mA则表示光电流大于100mA。如图3所示，当驱动电压为1V和10V时，该探测器对0.2W的980nm信号光的响应度最大约为17.5mA/W；当驱动电压为15V和21V时，该探测器对0.2W的980nm信号光的响应度大于450mA/W；当驱动电压为15V时，该探测器对10mW的980nm信号光的响应度大于9400mA/W。结果表明，采用本发明公开的电压调控方法，在探测980nm红外光时可实现大于9400mA/W的响应度，并且通过减小驱动电压至临界值之下，可使光电探测器从低阻态恢复至高阻态，从而完成探测周期。

Claims (4)

1.一种光敏半导体材料VO2陶瓷，其特征在于：采用微米级粒径的VO2粉剂，在保护气氛中400℃烧结制备获得。
2.根据权利要求1所述的VO2陶瓷，其特征在于：制备方法如下：
1）将市售VO2粉剂研磨至微米级粒径，然后加入VO2质量六分之一的甲胺碘（MAI），通过研磨混合均匀；
2）将步骤1）中制备的混合粉末以7MPa的压强压片；
3）将步骤2）中的VO2片放入通氩气的管式炉中，以6.7℃/min的速率升温至400℃，在400℃烧结5小时，然后以不大于3.4℃/min的速率降温至室温，获得VO2陶瓷片。
3.一种高响应度的VO2陶瓷红外弱光探测器，其特征在于：
采用根据权利要求1所述的VO2陶瓷作为光敏半导体，采用金属银制作阴阳电极；
探测10mW的980nm红外光时，实现安培级的高光电流，实现不低于10A/W级的高响应度。
4.根据权利要求3所述的高响应度的VO2陶瓷红外弱光探测器的电压调控方法，其特征在于：
驱动电压小于临界值时响应度较低；
驱动电压高于临界值时，信号光照射下探测器由高阻态变为低阻态，电流大幅增大，获得高响应度；
通过减小驱动电压至临界值之下，使探测器从低阻态恢复至高阻态；
所述临界值由实验确定。
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