CN113097741A - Optically transparent broadband electromagnetic absorption structure with adjustable wave-absorbing amplitude - Google Patents
Optically transparent broadband electromagnetic absorption structure with adjustable wave-absorbing amplitude Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
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- B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
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- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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- B32B9/06—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of paper or cardboard
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
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- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/02—Composition of the impregnated, bonded or embedded layer
- B32B2260/028—Paper layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/04—Impregnation, embedding, or binder material
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/412—Transparent
Abstract
The invention discloses an optically transparent broadband electromagnetic absorption structure with adjustable wave-absorbing amplitude, wherein a first medium substrate layer, a first graphene layer, a diaphragm layer, a second graphene layer and a second medium substrate layer form a sandwich structure, the first graphene layer and the second graphene layer have good adjustable surface resistance property and good light transmission property in a microwave frequency band, the first graphene layer and the second graphene layer realize the adjustment of the surface resistance from 2000 ohm/sq-200 ohm/sq by adding bias voltage, the wave-absorbing amplitude of the whole wave-absorbing structure is adjusted, the first indium tin oxide layer and the second indium tin oxide layer are respectively used as medium loss layers, the third indium tin oxide layer is used as a shielding reflection layer and meets the transmission theory of a transmission line together with the sandwich structure; the wave absorbing device has the advantages that wave absorbing amplitude regulation and control can be realized by regulating the resistance value of the graphene surface, the wave absorbing device has the characteristics of adjustable absorbing amplitude in a large range and wider relative bandwidth while having optical transparency, and the wave absorbing effect is good.
Description
Technical Field
The invention relates to a broadband electromagnetic absorption structure, in particular to an optically transparent broadband electromagnetic absorption structure with adjustable wave-absorbing amplitude.
Background
The electromagnetic stealth technology is widely applied to military equipment and electronic countermeasure, and has an important effect on improving the battlefield viability of airplanes, ships, warships and the like. The electromagnetic stealth technology aims to reduce the radar scattering characteristics of a target of a self party so as to realize low detectability of the target of the self party, and one of the main technical approaches is to use an electromagnetic absorption structure with an electromagnetic absorption function to absorb the energy of radar waves incident on the surface of equipment and reduce the radar scattering sectional area, so that the stealth of a radar frequency band is realized.
In recent years, with diversification of detection means and frequency spectrum of detection and electronic countermeasure systems, a multi-spectrum multifunctional electromagnetic stealth technology has become an urgent need for improving the electromagnetic stealth performance. One of the typical functional requirements is electromagnetic wave absorption for broadband absorption. In the traditional electromagnetic absorption structure with the stealth function, materials such as ferrite, metal micro powder and barium titanate are used as wave absorbers to absorb electromagnetic waves, but the absorption of the wave absorbers is usually the absorption of a fixed point frequency, and the frequency absorption point is related to the equivalent parasitic capacitance inductance generated by the electromagnetic absorption structure.
The existing electromagnetic absorption structure with Broadband wave-absorbing Frequency mainly realizes Multi-Frequency point selective absorption by using periodic unit structures with different sizes, so as to realize Broadband wave absorption, for example, a Broadband electromagnetic absorption structure disclosed in Multi-Frequency Broadband and Terahertz method adsorbent Based on Graphene of Qihui Zhou has Broadband wave-absorbing Frequency, but the Broadband electromagnetic absorption structure adopts opaque metal and electronic elements, cannot be applied to areas with optical transparency requirements, such as electromagnetic stealth of portholes and other application fields requiring optical transparency, cannot realize adjustment of wave-absorbing amplitude, and has single wave-absorbing condition and general wave-absorbing effect.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an optically transparent broadband electromagnetic absorption structure with adjustable wave-absorbing amplitude, which can realize wave-absorbing amplitude regulation and control only by regulating the resistance value of a graphene surface, has the wave-absorbing characteristics of adjustable absorption amplitude in a larger range and wider relative bandwidth while having optical transparency, and has good wave-absorbing effect.
The technical scheme adopted by the invention for solving the technical problems is as follows: an optically transparent broadband electromagnetic absorption structure with adjustable wave-absorbing amplitude comprises a first medium substrate layer, a first graphene layer, a diaphragm layer, a second graphene layer, a second medium substrate layer, a first indium tin oxide layer, a third medium substrate layer, a second indium tin oxide layer, a fourth medium substrate layer, a third indium tin oxide layer and a fifth medium substrate layer, wherein the first medium substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer, the second medium substrate layer, the first indium tin oxide layer, the third medium substrate layer, the second indium tin oxide layer, the fourth medium substrate layer, the third indium tin oxide layer and the fifth medium substrate layer are rectangular, and the first medium substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer, the fourth medium substrate layer, the third indium tin oxide layer and the fifth medium substrate layer are rectangular, The front end faces of the second dielectric substrate layer, the first indium tin oxide layer, the third dielectric substrate layer, the second indium tin oxide layer, the fourth dielectric substrate layer, the third indium tin oxide layer and the fifth dielectric substrate layer are positioned on the same plane, the rear end faces of the first dielectric substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer, the second dielectric substrate layer, the first indium tin oxide layer, the third dielectric substrate layer, the second indium tin oxide layer, the fourth dielectric substrate layer, the third indium tin oxide layer and the fifth dielectric substrate layer are positioned on the same plane, and the rear end faces of the first dielectric substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer, the second dielectric substrate layer, the second indium tin oxide layer and the fifth dielectric substrate layer are positioned on the same plane, The left end faces of the first indium tin oxide layer, the third medium substrate layer, the second indium tin oxide layer, the fourth medium substrate layer, the third indium tin oxide layer and the fifth medium substrate layer are positioned on the same plane, the right end faces of the first medium substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer, the second medium substrate layer, the first indium tin oxide layer, the third medium substrate layer, the second indium tin oxide layer, the fourth medium substrate layer, the third indium tin oxide layer and the fifth medium substrate layer are positioned on the same plane, the first medium substrate layer, the diaphragm layer, the second graphene layer and the second medium substrate layer are sequentially laminated together from top to bottom, and the two adjacent layers are connected with each other, the first ITO layer is positioned below the second dielectric substrate layer, a distance is reserved between the first ITO layer and the second dielectric substrate layer, a first gap is formed between the first ITO layer and the second dielectric substrate layer, the first gap is filled with air, the third dielectric substrate layer is positioned below the first ITO layer, the first ITO layer is attached to the upper surface of the third dielectric substrate layer, the second ITO layer is positioned below the third dielectric substrate layer, a distance is reserved between the second ITO layer and the third dielectric substrate layer, a second gap is reserved between the second ITO layer and the third dielectric substrate layer, and the second gap is filled with air, the fourth dielectric substrate layer is positioned below the second indium tin oxide layer, the second indium tin oxide layer is attached to the upper surface of the fourth dielectric substrate layer, the third indium tin oxide layer is positioned below the fourth dielectric substrate layer, a distance is reserved between the third indium tin oxide layer and the fourth dielectric substrate layer, a third gap is formed between the third indium tin oxide layer and the fourth dielectric substrate layer, the third gap is filled with air, the fifth dielectric substrate layer is positioned below the third indium tin oxide layer, the third indium tin oxide layer is attached to the upper surface of the fifth dielectric substrate layer, and when a bias voltage is applied between the first graphene layer and the second graphene layer, the resistance values of the first graphene layer and the second graphene layer are changed within the range of 200/sq-2000 Ω/sq, when the second graphene layer is grounded, if a voltage of 0v is applied to the first graphene layer, the surface resistance values of the first graphene layer and the second graphene layer are both 2000 Ω/sq, if a voltage of 5v is applied to the first graphene layer, the surface resistance values of the first graphene layer and the second graphene layer are both 200 Ω/sq, if a voltage of more than 0v and less than 5v is applied to the first graphene layer, the surface resistance values of the first graphene layer and the second graphene layer are both more than 200 Ω/sq and less than 2000 Ω/sq and are equal to each other, and the larger the bias voltage applied between the first graphene layer and the second graphene layer is, the smaller the surface resistance values of the first graphene layer and the second graphene layer are, the smaller the bias voltage applied between the first graphene layer and the second graphene layer is, the larger the surface resistance of the first graphene layer and the second graphene layer is, the first indium tin oxide layer is realized by indium tin oxide with the surface resistance of 500 omega/sq, the second indium tin oxide layer is realized by indium tin oxide with the surface resistance of 200 omega/sq, and the third indium tin oxide layer is realized by indium tin oxide with the surface resistance of 5 omega/sq. The distance between the second medium substrate layer and the first indium tin oxide layer is 1cm, the distance between the third medium substrate layer and the second indium tin oxide layer is 1cm, and the distance between the fourth medium substrate layer and the third indium tin oxide layer is 1 cm.
The first medium substrate layer, the second medium substrate layer, the third medium substrate layer, the fourth medium substrate layer and the fifth medium substrate layer are all made of PET materials with the thickness of 0.125mm and the dielectric constant of 2.8, the diaphragm layers are made of diaphragm paper soaked with ionic liquid, the thickness of the diaphragm layers is 0.01mm, and the ionic liquid is 1-butyl-3-methylimidazole hexafluorophosphate.
Compared with the prior art, the invention has the advantages that through the sandwich structure formed by the first medium substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer and the second medium substrate layer, when a bias voltage is applied between the first graphene layer and the second graphene layer, the surface resistance values of the first graphene layer and the second graphene layer are changed within the range of 200 omega/sq-2000 omega/sq, when the second graphene layer is grounded, if the first graphene layer is loaded with 0v voltage, the surface resistance values of the first graphene layer and the second graphene layer are both 2000 omega/sq, if the first graphene layer is loaded with 5v voltage, the surface resistance values of the first graphene layer and the second graphene layer are both 200 omega/sq, and if the first graphene layer is loaded with more than 0v and less than 5v voltage, the surface resistance values of the first graphene layer and the second graphene layer are both more than 200 omega/sq and less than 2000 omega/sq, and the two are equal, and the larger the bias voltage applied between the first graphene layer and the second graphene layer is, the smaller the surface resistance of the first graphene layer and the second graphene layer is, the smaller the bias voltage applied between the first graphene layer and the second graphene layer is, the larger the surface resistance of the first graphene layer and the second graphene layer is, the better adjustable surface resistance property and the better light transmission property of the first graphene layer and the second graphene layer are in a microwave frequency band, the adjustment of the surface resistance from 2000 omega/sq-200 omega/sq can be more easily and stably realized by adding the bias voltage, therefore, the equivalent input impedance of the whole structure can be adjusted on the premise of not influencing the transparency of the whole structure, thereby the wave-absorbing amplitude of the whole wave-absorbing structure can be adjusted by adjusting the impedance matching condition, and the first indium tin oxide layer, the sandwich structure, The first indium tin oxide layer, the second indium tin oxide layer and the third indium tin oxide layer have different surface resistances, wherein the first indium tin oxide layer with the surface resistance of 500 ohm/sq and the second indium tin oxide layer with the surface resistance of 200 ohm/sq are respectively used as dielectric loss layers, the distance between the second dielectric substrate layer and the first indium tin oxide layer is 1cm, the distance between the third dielectric substrate layer and the second indium tin oxide layer is 1cm, the distance between the fourth dielectric substrate layer and the third indium tin oxide layer is 1cm, therefore, the distance between the layers is 1cm, the third indium tin oxide layer with the surface resistance of 5 ohm/sq is used as a shielding reflection layer of electromagnetic waves, the electromagnetic waves are reflected back to the sandwich structure and the dielectric loss layers until the energy loss of the electromagnetic waves is exhausted, the whole structure of the invention is realized by adopting a multilayer structure, the absorption effect of the whole structure on electromagnetic waves is changed by adjusting the surface resistance values of a first graphene layer and a second graphene layer in the sandwich structure, and simultaneously, a first indium tin oxide layer and a second indium tin oxide layer with different surface resistance values are adopted as two dielectric loss layers to be matched with the sandwich structure, so that the whole structure meets the theory of an electromagnetic wave transmission line, has stable wave absorption effect, has the wave absorption relative bandwidth reaching 150 percent under the condition of highest amplitude wave absorption, simultaneously, because each layer in the whole structure is a conventional rectangular structure and has no special patterning, the whole structure can achieve the same excellent absorption effect on TE polarized waves and TM polarized waves, in addition, because the first indium tin oxide layer, the second indium tin oxide layer and the third indium tin oxide layer have the material property of optical transparency, a first gap is formed between the first indium tin oxide layer and the second dielectric substrate layer, a second gap is formed between the second indium tin oxide layer and the third medium substrate layer, a third gap is formed between the third indium tin oxide layer and the fourth medium substrate layer, and air is filled in the first gap, the second gap and the third gap to realize the optical transparency of the whole structure.
Drawings
FIG. 1 is a side view of a broadband electromagnetic absorption structure of the present invention having both optical transparency and tunable absorption amplitude;
fig. 2 is a graph showing the change of the reflectivity of the perpendicular incident electromagnetic wave with frequency when the first graphene layer and the second graphene layer have different surface resistances according to the broadband electromagnetic absorption structure with optical transparency and adjustable wave-absorbing amplitude of the present invention;
fig. 3 is a graph showing the variation of the absorption rate of the broadband electromagnetic absorption structure with optical transparency and adjustable wave-absorbing amplitude with respect to the frequency of the vertically incident electromagnetic wave when the first graphene layer and the second graphene layer have different surface resistances.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
Example (b): as shown in fig. 1, an optically transparent broadband electromagnetic absorption structure with adjustable wave-absorbing amplitude includes a first medium substrate layer 1, a first graphene layer 2, a diaphragm layer 3, a second graphene layer 4, a second medium substrate layer 5, a first ito layer 6, a third medium substrate layer 7, a second ito layer 8, a fourth medium substrate layer 9, a third ito layer 10 and a fifth medium substrate layer 11, where the first medium substrate layer 1, the first graphene layer 2, the diaphragm layer 3, the second graphene layer 4, the second medium substrate layer 5, the first ito layer 6, the third medium substrate layer 7, the second ito layer 8, the fourth medium substrate layer 9, the third ito layer 10 and the fifth medium substrate layer 11 are rectangular, and the first medium substrate layer 1, the first graphene layer 2, the diaphragm layer 3, the second graphene layer 4, the second medium substrate layer 5, the third medium substrate layer 9, the third ito layer 7, the second ito layer 10 and the fifth medium substrate layer 11 are rectangular, and the first medium substrate layer 1, the front end faces of the first indium tin oxide layer 6, the third medium substrate layer 7, the second indium tin oxide layer 8, the fourth medium substrate layer 9, the third indium tin oxide layer 10 and the fifth medium substrate layer 11 are positioned on the same plane, the rear end faces of the first medium substrate layer 1, the first graphene layer 2, the diaphragm layer 3, the second graphene layer 4, the second medium substrate layer 5, the first indium tin oxide layer 6, the third medium substrate layer 7, the second indium tin oxide layer 8, the fourth medium substrate layer 9, the third indium tin oxide layer 10 and the fifth medium substrate layer 11 are positioned on the same plane, the left end faces of the first medium substrate layer 1, the first graphene layer 2, the diaphragm layer 3, the second graphene layer 4, the second medium substrate layer 5, the first indium tin oxide layer 6, the third medium substrate layer 7, the second indium tin oxide layer 8, the fourth medium substrate layer 9, the third indium tin oxide layer 10 and the fifth medium substrate layer 11 are positioned on the same plane, the right end faces of the first medium substrate layer 1, the first graphene layer 2, the diaphragm layer 3, the second graphene layer 4, the second medium substrate layer 5, the first indium tin oxide layer 6, the third medium substrate layer 7, the second indium tin oxide layer 8, the fourth medium substrate layer 9, the third indium tin oxide layer 10 and the fifth medium substrate layer 11 are positioned on the same plane, the first medium substrate layer 1, the first graphene layer 2, the diaphragm layer 3, the second graphene layer 4 and the second medium substrate layer 5 are sequentially laminated together from top to bottom, adjacent two layers are connected with each other, the first indium tin oxide layer 6 is positioned below the second medium substrate layer 5, a distance is reserved between the first indium tin oxide layer 6 and the second medium substrate layer 5, a first gap is formed between the first indium tin oxide layer 6 and the second medium substrate layer 5, air is filled in the first gap, the third medium substrate layer 7 is positioned below the first indium tin oxide layer 6, the first indium tin oxide layer 6 is attached to the upper surface of the third dielectric substrate layer 7, the second indium tin oxide layer 8 is located below the third dielectric substrate layer 7, a distance is reserved between the second indium tin oxide layer 8 and the third dielectric substrate layer 7, a second gap is formed between the second indium tin oxide layer 8 and the third dielectric substrate layer 7, the second gap is filled with air, the fourth dielectric substrate layer 9 is located below the second indium tin oxide layer 8, the second indium tin oxide layer 8 is attached to the upper surface of the fourth dielectric substrate layer 9, the third indium tin oxide layer 10 is located below the fourth dielectric substrate layer 9, a distance is reserved between the third indium tin oxide layer 10 and the fourth dielectric substrate layer 9, a third gap is formed between the third indium tin oxide layer 10 and the fourth dielectric substrate layer 9, the third gap is filled with air, the fifth dielectric substrate layer 11 is located below the third indium tin oxide layer 10, the third indium tin oxide layer 10 is attached to the upper surface of the fifth dielectric substrate layer 11, when a bias voltage is applied between the first graphene layer 2 and the second graphene layer 4, the surface resistance values of the first graphene layer 2 and the second graphene layer 4 vary within a range of 200 Ω/sq to 2000 Ω/sq, when the second graphene layer 4 is grounded, if a voltage of 0v is applied to the first graphene layer 2, the surface resistance values of the first graphene layer 2 and the second graphene layer 4 are both 2000 Ω/sq, if a voltage of 5v is applied to the first graphene layer 2, the surface resistance values of the first graphene layer 2 and the second graphene layer 4 are both 200 Ω/sq, if a voltage of more than 0v and less than 5v is applied to the first graphene layer 2, the surface resistance values of the first graphene layer 2 and the second graphene layer 4 are both more than 200 Ω/sq and less than 2000 Ω/sq and are equal to each other, and the bias voltage applied between the first graphene layer 2 and the second graphene layer 4 is larger, the resistance of the surfaces of the first graphene layer 2 and the second graphene layer 4 is smaller, the bias voltage applied between the first graphene layer 2 and the second graphene layer 4 is smaller, the resistance of the surfaces of the first graphene layer 2 and the second graphene layer 4 is larger, the first indium tin oxide layer 6 is realized by indium tin oxide with the surface resistance of 500 omega/sq, the second indium tin oxide layer 8 is realized by indium tin oxide with the surface resistance of 200 omega/sq, and the third indium tin oxide layer 10 is realized by indium tin oxide with the surface resistance of 5 omega/sq. The distance between the second dielectric substrate layer 5 and the first indium tin oxide layer 6 is 1cm, the distance between the third dielectric substrate layer 7 and the second indium tin oxide layer 8 is 1cm, and the distance between the fourth dielectric substrate layer 9 and the third indium tin oxide layer 10 is 1 cm.
In this embodiment, the first medium substrate layer 1, the second medium substrate layer 5, the third medium substrate layer 7, the fourth medium substrate layer 9, and the fifth medium substrate layer 11 are all made of a PET material having a thickness of 0.125mm and a dielectric constant of 2.8, the diaphragm layer 3 is made of diaphragm paper impregnated with an ionic liquid, the thickness of the diaphragm layer 3 is 0.01mm, and the ionic liquid used is 1-butyl-3-methylimidazolium hexafluorophosphate.
The broadband electromagnetic absorption structure with optical transparency and adjustable wave-absorbing amplitude is simulated, wherein a graph of the change of the reflectivity of the vertical incident electromagnetic wave along with the frequency of the broadband electromagnetic absorption structure with optical transparency and adjustable wave-absorbing amplitude is shown in fig. 2 under the condition that the first graphene layer and the second graphene layer are different in surface resistance, and a graph of the change of the absorptivity of the vertical incident electromagnetic wave along with the frequency of the broadband electromagnetic absorption structure with optical transparency and adjustable wave-absorbing amplitude is shown in fig. 3 under the condition that the first graphene layer and the second graphene layer are different in surface resistance.
As can be seen from fig. 2 and fig. 3, when the surface resistance values of the first graphene layer and the second graphene layer of the electromagnetic absorption structure of the present invention are 200 Ω/sq-2000 Ω/sq, the larger the bias voltage applied between the first graphene layer and the second graphene layer is, the smaller the surface resistance values of the first graphene layer and the second graphene layer are, when the bias voltage is reduced, the surface resistance values of the first graphene layer and the second graphene layer are correspondingly increased, and the larger the loss of the electromagnetic wave amplitude is along with the continuous increase of the surface resistance values of the first graphene layer and the second graphene layer, so that the electromagnetic absorption amplitude of the electromagnetic absorption structure of the present invention can be adjusted from 60% to 99%, and the relative bandwidth of the broadband wave absorption of the present invention reaches 150%, and the wave-absorbing amplitude is adjustable in a large range.
Claims (2)
1. An optically transparent broadband electromagnetic absorption structure with adjustable wave-absorbing amplitude is characterized by comprising a first medium substrate layer, a first graphene layer, a diaphragm layer, a second graphene layer, a second medium substrate layer, a first indium tin oxide layer, a third medium substrate layer, a second indium tin oxide layer, a fourth medium substrate layer, a third indium tin oxide layer and a fifth medium substrate layer, wherein the first medium substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer, the second medium substrate layer, the first indium tin oxide layer, the third medium substrate layer, the second indium tin oxide layer, the fourth medium substrate layer, the third indium tin oxide layer and the fifth medium substrate layer are rectangular, and the first medium substrate layer, the first graphene layer, the diaphragm layer and the fifth medium substrate layer are rectangular, The front end faces of the second graphene layer, the second dielectric substrate layer, the first indium tin oxide layer, the third dielectric substrate layer, the second indium tin oxide layer, the fourth dielectric substrate layer, the third indium tin oxide layer and the fifth dielectric substrate layer are positioned on the same plane, the rear end faces of the first dielectric substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer, the second dielectric substrate layer, the first indium tin oxide layer, the third dielectric substrate layer, the second indium tin oxide layer, the fourth dielectric substrate layer, the third indium tin oxide layer and the fifth dielectric substrate layer are positioned on the same plane, and the rear end faces of the first dielectric substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer, the third indium tin oxide layer and the fifth dielectric substrate layer are positioned on the same plane, The left end faces of the second dielectric substrate layer, the first indium tin oxide layer, the third dielectric substrate layer, the second indium tin oxide layer, the fourth dielectric substrate layer, the third indium tin oxide layer and the fifth dielectric substrate layer are positioned on the same plane, the right end faces of the first dielectric substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer, the second dielectric substrate layer, the first indium tin oxide layer, the third dielectric substrate layer, the second indium tin oxide layer, the fourth dielectric substrate layer, the third indium tin oxide layer and the fifth dielectric substrate layer are positioned on the same plane, the first dielectric substrate layer, the first graphene layer, the diaphragm layer, the second graphene layer and the second dielectric substrate layer are sequentially laminated together from top to bottom, and the two adjacent layers are connected with each other, the first ITO layer is positioned below the second dielectric substrate layer, a distance is reserved between the first ITO layer and the second dielectric substrate layer, a first gap is formed between the first ITO layer and the second dielectric substrate layer, the first gap is filled with air, the third dielectric substrate layer is positioned below the first ITO layer, the first ITO layer is attached to the upper surface of the third dielectric substrate layer, the second ITO layer is positioned below the third dielectric substrate layer, a distance is reserved between the second ITO layer and the third dielectric substrate layer, a second gap is reserved between the second ITO layer and the third dielectric substrate layer, and the second gap is filled with air, the fourth dielectric substrate layer is positioned below the second indium tin oxide layer, the second indium tin oxide layer is attached to the upper surface of the fourth dielectric substrate layer, the third indium tin oxide layer is positioned below the fourth dielectric substrate layer, a distance is reserved between the third indium tin oxide layer and the fourth dielectric substrate layer, a third gap is formed between the third indium tin oxide layer and the fourth dielectric substrate layer, the third gap is filled with air, the fifth dielectric substrate layer is positioned below the third indium tin oxide layer, the third indium tin oxide layer is attached to the upper surface of the fifth dielectric substrate layer, and when a bias voltage is applied between the first graphene layer and the second graphene layer, the resistance values of the first graphene layer and the second graphene layer are changed within the range of 200/sq-2000 Ω/sq, when the second graphene layer is grounded, if a voltage of 0v is applied to the first graphene layer, the surface resistance values of the first graphene layer and the second graphene layer are both 2000 Ω/sq, if a voltage of 5v is applied to the first graphene layer, the surface resistance values of the first graphene layer and the second graphene layer are both 200 Ω/sq, if a voltage of more than 0v and less than 5v is applied to the first graphene layer, the surface resistance values of the first graphene layer and the second graphene layer are both more than 200 Ω/sq and less than 2000 Ω/sq and are equal to each other, and the larger the bias voltage applied between the first graphene layer and the second graphene layer is, the smaller the surface resistance values of the first graphene layer and the second graphene layer are, the smaller the bias voltage applied between the first graphene layer and the second graphene layer is, the larger the surface resistance of the first graphene layer and the second graphene layer is, the first indium tin oxide layer is realized by indium tin oxide with the surface resistance of 500 omega/sq, the second indium tin oxide layer is realized by indium tin oxide with the surface resistance of 200 omega/sq, and the third indium tin oxide layer is realized by indium tin oxide with the surface resistance of 5 omega/sq. The distance between the second medium substrate layer and the first indium tin oxide layer is 1cm, the distance between the third medium substrate layer and the second indium tin oxide layer is 1cm, and the distance between the fourth medium substrate layer and the third indium tin oxide layer is 1 cm.
2. The optically transparent broadband electromagnetic absorption structure with adjustable wave-absorbing amplitude as claimed in claim 1, wherein the first medium substrate layer, the second medium substrate layer, the third medium substrate layer, the fourth medium substrate layer and the fifth medium substrate layer are all made of PET material with a thickness of 0.125mm and a dielectric constant of 2.8, the diaphragm layer is made of diaphragm paper soaked with ionic liquid, the diaphragm layer is 0.01mm thick, and the ionic liquid is 1-butyl-3-methylimidazolium hexafluorophosphate.
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