CN113097105B - Dry etching device and method for second-class superlattice refrigerating infrared chip - Google Patents
Dry etching device and method for second-class superlattice refrigerating infrared chip Download PDFInfo
- Publication number
- CN113097105B CN113097105B CN202110319405.1A CN202110319405A CN113097105B CN 113097105 B CN113097105 B CN 113097105B CN 202110319405 A CN202110319405 A CN 202110319405A CN 113097105 B CN113097105 B CN 113097105B
- Authority
- CN
- China
- Prior art keywords
- etching
- chip
- sample table
- gas
- lifting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 36
- 238000007789 sealing Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 230000001502 supplementing effect Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 8
- 238000005057 refrigeration Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a dry etching device and an etching method for a second-class superlattice refrigerating infrared chip, wherein the etching device comprises a box body, the interior of the box body is divided into an upper chamber and a lower chamber by a baffle plate, the front surface of the box body is provided with a bin opening, a bin door is arranged at the bin opening, the middle part of the baffle plate is provided with an opening, a sample table is arranged in the lower chamber, a lifting table is arranged above the sample table, the lifting table is fixedly connected with the sample table, an etching area is formed between the sample table and the lifting table, a substrate is arranged in the etching area, the sample table is driven to lift by the lifting device, a voltage stabilizing tube, a first vacuum tube, a second vacuum tube and a gas filling tube are arranged on the box body, and the gas filling tube is connected with Cl 2 And BCl 3 And (3) gas. The dry etching device and the dry etching method for the second-class superlattice refrigeration infrared chip can effectively solve the problems that etching gas consumption is large, etching gas is easy to leak and the like in the chip etching process, and can effectively reduce the gas consumption cost in the chip etching process.
Description
Technical Field
The invention belongs to the technical field of chip manufacturing, and particularly relates to a dry etching device for a second-class superlattice refrigerating infrared chip.
Background
As the material of the infrared detector, the InAs/GaSb type superlattice has the advantages of easy wavelength adjustment, larger effective electron mass, lower Auger recombination rate, high response, strong sensitivity and the like. The manufacturing process of the second-class superlattice refrigerating infrared chip generally comprises the steps of glue homogenizing, pre-baking, exposure, development, post-baking, etching, photoresist removing and the like. The etching process mainly adopts ICP dry etching technology. The ICP dry etching technology is widely applied to the manufacturing process of semiconductor chips, and has the advantages of good anisotropism, easy control of etching morphology and etching depth and the like. However, this technique generally uses Cl 2 And BCl 3 Co-participate in reactive etching, and Cl 2 And BCl 3 Are all toxic gases, especially Cl 2 Belongs to highly toxic gas, and is very strict in control. Leakage of etching gas is easy to occur in the etching process, great potential safety hazards and management difficulty exist, and the etching gas consumption is large and the cost is high in each etching process.
Disclosure of Invention
In order to solve the technical problems, the invention adopts the following technical scheme: the dry etching device for the second-class superlattice refrigerating infrared chip comprises a box body, wherein the inner part of the box body is divided into an upper cavity and a lower cavity through a partition plate, the front surface of the box body is provided with a bin port communicated with the lower cavity, a bin door capable of sealing the bin port is arranged at the bin port, the middle part of the partition plate is provided with an opening, a sample table is arranged in the lower cavity, a lifting table is arranged above the sample table and fixedly connected with the sample table through a connecting plate, an etching area is formed between the sample table and the lifting table, a substrate is arranged in the etching area, the sample table is driven to lift by a lifting device, the lifting device drives the sample table to fall to the lowest point, the etching area is positioned in the lower cavity, the lifting table seals the opening, the lifting device drives the sample table to rise to the highest point, the etching area is positioned in the upper cavity, the sample table seals the opening, a pressure stabilizing tube, a first vacuum tube, a second vacuum tube and a gas adding tube are arranged on the box, the first vacuum tube are respectively communicated with the lower cavity, the second vacuum tube and the gas adding tube is respectively communicated with the upper cavity, and Cl is connected 2 And BCl 3 And (3) gas.
Preferably, in the above technical solution, a sealing ring is disposed inside the opening.
Preferably, the connecting plate is a porous connecting plate.
As the optimization of the technical scheme, the telescopic rod is arranged in the etching area and driven by the driving mechanism to stretch and retract, and the telescopic rod pushes the substrate out of the lower chamber from the bin opening.
As the optimization of the technical scheme, the two sides of the substrate are connected with the guide rods, the guide rods are arranged in the guide cylinders, and the guide cylinders are fixed on the sample table.
As the preferable mode of the technical scheme, the substrate is detachably provided with a sample plate, and the sample plate is provided with a groove matched with the chip in shape.
The method for etching the second-class superlattice refrigerating infrared chip by a single gas dry method comprises the following specific steps of using the etching device according to any one of claims 1-6:
the bin gate is opened, and a chip to be etched is placed on the substrate;
the bin gate is closed, and the first vacuum tube and the second vacuum tube respectively vacuumize the lower chamber and the upper chamber;
starting the lifting device, lifting the sample table to the highest point, and enabling the etching area to enter the upper cavity;
the gas adding pipe fills Cl into the upper chamber 2 And BCl 3 Gas, chip etching is carried out;
starting the lifting device, lowering the sample table to the lowest point, and returning the etching area to the lower chamber;
the first vacuum tube vacuumizes the lower chamber, and then the pressure stabilizing tube fills protective gas into the lower chamber so that the lower chamber is close to the external pressure;
and opening the bin gate, taking out the etched chip, and supplementing a new chip to be etched.
Preferably, in the above technical solution, the shielding gas is air or nitrogen.
The beneficial effects of the invention are as follows: the dry etching device and the dry etching method for the second-class superlattice refrigeration infrared chip can effectively solve the problems that etching gas consumption is large, etching gas is easy to leak and the like in the chip etching process, and can effectively reduce the gas consumption cost in the chip etching process.
Drawings
FIG. 1 is a schematic view of the structure of an etching region in a lower chamber;
FIG. 2 is a schematic view of the structure of the etching region in the upper chamber;
fig. 3 is a schematic view of the structure of the substrate when it extends out of the lower chamber from the opening.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
As shown in figures 1-3, the second-class superlattice refrigeration infrared chip dry etching device comprises a box body 1, the interior of the box body 1 is divided into an upper cavity 3 and a lower cavity 4 through a partition plate 2, the front surface of the box body 1 is provided with a bin opening 5 communicated with the lower cavity 4, a bin door capable of sealing the bin opening 5 is arranged at the bin opening 5, the middle part of the partition plate 2 is provided with an opening 6, a sample table 7 is arranged in the lower cavity 4, a lifting table 8 is arranged above the sample table 7, the lifting table 8 is fixedly connected with the sample table 7 through a connecting plate 9, an etching area 10 is formed between the sample table 7 and the lifting table 8, a substrate 11 is arranged in the etching area 10, the sample table 7 is driven to lift by a lifting device, when the lifting device drives the sample table 7 to descend to the lowest point, the etching area 10 is positioned in the lower cavity 4, the lifting table 8 seals the opening 6, the lifting device drives the sample table 7 to lift to the highest point, the etching area 10 is positioned in the upper cavity 3, the sample table 7 seals the opening 6, a pipe 12, a first vacuum pipe 13, a second vacuum pipe 14 and a gas pipe 15 are fixedly connected with the first vacuum pipe 12 and the first vacuum pipe 13 are respectively connected with the stable pipe 13The lower chamber 4 is communicated with the upper chamber 3 respectively by a second vacuum tube 14 and a gas adding tube 15, and the gas adding tube 15 is connected with Cl 2 And BCl 3 And (3) gas. Only a small amount of etching gas in the upper chamber 3 is taken away by the first vacuum tube 13 in the chip feeding and discharging process, so that the utilization rate of the etching gas is improved, leakage of the etching gas is reduced, the amount of the etching gas overflowing from the bin opening 5 is small, and the safety of operators is improved. The etching gas in the upper chamber 3 can be replaced periodically, so that the cost of the etching gas is reduced.
Further, a sealing ring is arranged on the inner side of the opening 6. The sealing ring maintains tightness with the sample stage 7 or the lifting stage 8.
Further, the connection plate 9 is a porous connection plate. The porous webs do not interfere with the entry of etching gas into the etching zone 10.
Further, a telescopic rod is installed in the etching area 10, the telescopic rod is driven by a driving mechanism to stretch and retract, and the telescopic rod pushes the substrate 11 out of the lower chamber 4 from the bin opening 5. The driving mechanism can be a motor, an electric push rod, an air cylinder and other traditional driving mechanisms.
Further, guide rods 16 are connected to both sides of the base plate 11, the guide rods 16 are installed in guide cylinders 17, and the guide cylinders 17 are fixed on the sample table 7. The cooperation of the guide bar 16 and the guide cylinder 17 makes the substrate 11 smoother during the movement.
Further, the substrate 11 is detachably provided with a sample plate, and the sample plate is provided with a groove matched with the chip in shape. The grooves prevent the chip from sliding on the substrate 11. The sample plate can be detachably arranged, and different sample plates can be replaced. Different sample plates are provided with grooves with different shapes, so that the chip is suitable for chips with different specifications.
The specific operation steps comprise:
the door is opened and the chip to be etched is placed on the substrate 11.
The bin gate is closed, and the first vacuum tube 13 and the second vacuum tube 14 respectively vacuumize the lower chamber 4 and the upper chamber 3;
starting the lifting device, lifting the sample table 7 to the highest point, and enabling the etching area 10 to enter the upper chamber 3;
the gas pipe 15 is filled with Cl into the upper chamber 3 2 、BCl 3 Gas, chip etching is carried out;
starting the lifting device, and lowering the sample table 7 to the lowest point, wherein the etching area 10 returns to the lower chamber 4;
the first vacuum tube 13 vacuumizes the lower chamber 4, and then the pressure stabilizing tube 12 fills protective gas into the lower chamber 4 to enable the lower chamber 4 to approach the external pressure;
and opening the bin gate, taking out the etched chip, and supplementing a new chip to be etched.
Further, the shielding gas is air or nitrogen.
It should be noted that technical features such as other auxiliary mechanisms for dry etching related to the present application should be considered as the prior art, and specific structures, working principles, and control modes and spatial arrangement related to the technical features may be selected conventionally in the art, and should not be considered as the point of the present application, which is not further specifically described in detail.
While the preferred embodiments of the present invention have been described in detail, it should be appreciated that numerous modifications and variations may be made in accordance with the principles of the present invention by those skilled in the art without undue burden, and thus, all technical solutions which may be obtained by logic analysis, reasoning or limited experimentation based on the principles of the present invention as defined by the claims are within the scope of protection as defined by the present invention.
Claims (8)
1. The dry etching device for the second-class superlattice refrigerating infrared chip is characterized by comprising a box body, wherein the inner part of the box body is divided into an upper cavity and a lower cavity through a partition plate, the front surface of the box body is provided with a bin opening communicated with the lower cavity, a bin door capable of sealing the bin opening is arranged at the bin opening, an opening is arranged in the middle part of the partition plate, a sample table is arranged in the lower cavity, a lifting table is arranged above the sample table, the lifting table is fixedly connected with the sample table through a connecting plate, an etching area is formed between the sample table and the lifting table, a substrate is arranged in the etching area, and the sample table is driven to lift by the lifting deviceThe lifting device drives the sample table to be positioned in the lower cavity and the lifting table seals the opening, the lifting device drives the sample table to be positioned in the upper cavity and the sample table seals the opening, the box body is provided with a pressure stabilizing tube, a first vacuum tube, a second vacuum tube and a gas adding tube, the pressure stabilizing tube and the first vacuum tube are respectively communicated with the lower cavity, the second vacuum tube and the gas adding tube are respectively communicated with the upper cavity, and the gas adding tube is connected with Cl 2 And BCl 3 And (3) gas.
2. The dry etching device for the second-class superlattice refrigerating infrared chip as claimed in claim 1, wherein a sealing ring is arranged on the inner side of the opening.
3. The second-class superlattice refrigerating infrared chip dry etching device according to claim 1, wherein the connecting plate is a porous connecting plate.
4. The dry etching device for the second-class superlattice refrigerating infrared chip according to claim 1, wherein a telescopic rod is arranged in the etching area, the telescopic rod is driven by a driving mechanism to stretch and retract, and the telescopic rod pushes the substrate out of the lower chamber from the bin opening.
5. The dry etching device for the second-class superlattice refrigerating infrared chip as claimed in claim 4, wherein guide rods are connected to two sides of the substrate, the guide rods are installed in guide cylinders, and the guide cylinders are fixed on the sample table.
6. The dry etching device for the second-class superlattice refrigerating infrared chip as claimed in claim 5, wherein the substrate is detachably provided with a sample plate, and the sample plate is provided with a groove matched with the chip in shape.
7. A dry etching method for a second-class superlattice refrigerating infrared chip, which is characterized by comprising the specific steps of using an etching device as claimed in any one of claims 1-6, wherein the etching method comprises the following steps:
the bin gate is opened, and a chip to be etched is placed on the substrate;
the bin gate is closed, and the first vacuum tube and the second vacuum tube respectively vacuumize the lower chamber and the upper chamber;
starting the lifting device, lifting the sample table to the highest point, and enabling the etching area to enter the upper cavity;
the gas adding pipe fills Cl into the upper chamber 2 And BCl 3 Gas, chip etching is carried out;
starting the lifting device, lowering the sample table to the lowest point, and returning the etching area to the lower chamber;
the first vacuum tube vacuumizes the lower chamber, and then the pressure stabilizing tube fills protective gas into the lower chamber so that the pressure of the lower chamber is equal to the external pressure;
and opening the bin gate, taking out the etched chip, and supplementing a new chip to be etched.
8. The method for dry etching a second-class superlattice refrigerating infrared chip as recited in claim 7, wherein said shielding gas is air or nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110319405.1A CN113097105B (en) | 2021-03-25 | 2021-03-25 | Dry etching device and method for second-class superlattice refrigerating infrared chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110319405.1A CN113097105B (en) | 2021-03-25 | 2021-03-25 | Dry etching device and method for second-class superlattice refrigerating infrared chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113097105A CN113097105A (en) | 2021-07-09 |
| CN113097105B true CN113097105B (en) | 2023-11-21 |
Family
ID=76669929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110319405.1A Active CN113097105B (en) | 2021-03-25 | 2021-03-25 | Dry etching device and method for second-class superlattice refrigerating infrared chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113097105B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1187204A (en) * | 1997-09-05 | 1999-03-30 | Texas Instr Japan Ltd | Clean room system for semiconductor wafer treatment device |
| CN101061253A (en) * | 2004-11-22 | 2007-10-24 | 应用材料股份有限公司 | Substrate processing apparatus using a batch processing chamber |
| CN105097607A (en) * | 2014-05-22 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and cleaning method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6989228B2 (en) * | 1989-02-27 | 2006-01-24 | Hitachi, Ltd | Method and apparatus for processing samples |
| JP4046474B2 (en) * | 2000-11-13 | 2008-02-13 | 株式会社荏原製作所 | Continuous processing trap device and method of operating the trap device |
| KR100431657B1 (en) * | 2001-09-25 | 2004-05-17 | 삼성전자주식회사 | Method and apparatus for processing a wafer, method and apparatus for etching a wafer |
| KR101025323B1 (en) * | 2004-01-13 | 2011-03-29 | 가부시키가이샤 아루박 | Etching apparatus and etching method |
-
2021
- 2021-03-25 CN CN202110319405.1A patent/CN113097105B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1187204A (en) * | 1997-09-05 | 1999-03-30 | Texas Instr Japan Ltd | Clean room system for semiconductor wafer treatment device |
| CN101061253A (en) * | 2004-11-22 | 2007-10-24 | 应用材料股份有限公司 | Substrate processing apparatus using a batch processing chamber |
| CN105097607A (en) * | 2014-05-22 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and cleaning method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113097105A (en) | 2021-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103682240A (en) | Battery manufacturing equipment, battery no-cavity vacuum liquid-drawing device and battery vacuum-pumping packaging method | |
| CN201344287Y (en) | Vacuum valve of continuous evacuation device | |
| KR100719806B1 (en) | Dry etcher | |
| CN208795436U (en) | Helium mass spectrum leak detection equipment for new energy vehicle controller component | |
| CN113097105B (en) | Dry etching device and method for second-class superlattice refrigerating infrared chip | |
| KR101123299B1 (en) | Vacuum isolation apparatus and manufacturing equipment for display device having the same | |
| CN215418482U (en) | Lithium battery vacuum exhaust device | |
| KR101384965B1 (en) | Gate valve using slope driving | |
| CN217324293U (en) | Multi-cavity microwave plasma chemical vapor deposition device | |
| CN205371133U (en) | Pile -up valve and use circuit breaker hydraulic actuating mechanism of this pile -up valve | |
| CN115750821A (en) | Semiconductor vacuum gate valve and sealing method thereof | |
| CN214666039U (en) | Tunnel furnace door with good sealing performance | |
| CN214960487U (en) | Vacuum cavity with multi-cavity structure | |
| CN211952244U (en) | Welding heat insulation gas cylinder interlayer vacuumizing device | |
| KR20220148661A (en) | Gate valve for semiconductor and flat panel display apparatus | |
| CN207800750U (en) | Vacuum-pumping and sealing mechanism based on priming device | |
| KR200380587Y1 (en) | Gate valve | |
| CN216951657U (en) | Improved sealing structure of exhaust table sealing nozzle | |
| CN216988413U (en) | Vacuum seal pneumatic means and vacuum encapsulating equipment | |
| CN205692900U (en) | A kind of sealing structure of negative-pressure vacuum device | |
| CN219934447U (en) | Quantum dot continuous drying device | |
| CN218842307U (en) | Key vacuum coating machine | |
| CN114412752B (en) | Segmented vacuum working apparatus and method of using the same | |
| CN215184445U (en) | Isobaric liquid injection mechanism | |
| KR100688968B1 (en) | Gate valve |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |