CN113097062A - Etching process method and device - Google Patents

Etching process method and device Download PDF

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CN113097062A
CN113097062A CN202110301034.4A CN202110301034A CN113097062A CN 113097062 A CN113097062 A CN 113097062A CN 202110301034 A CN202110301034 A CN 202110301034A CN 113097062 A CN113097062 A CN 113097062A
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etching
segmented
etching process
parameter information
parameter
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林源为
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

The embodiment of the application discloses an etching process method and device, which are used for solving the problems that the size of a top scallop is overlarge and smooth transition is difficult to realize among sectional etching processes in the conventional etching process. The method comprises the following steps: acquiring first etching parameter information corresponding to an etching process and sectional parameter information for performing sectional execution on the etching process; determining second etching parameter information corresponding to each segmented etching process according to the first etching parameter information and the segmented parameter information; each segmented etching process comprises a plurality of cyclically executed process steps; and executing the etching process in sections according to the second etching parameter information respectively corresponding to each sectional etching process. The technical scheme can reduce the size of the top scallop, and can enable smooth transition between every two adjacent segmented etching processes.

Description

Etching process method and device
Technical Field
The present disclosure relates to semiconductor technologies, and in particular, to an etching method and an apparatus.
Background
In the field of microelectronics, deep silicon etching is an important process in the device processing process. Because the silicon deep microstructure has a larger depth-to-width ratio and a higher verticality, the traditional wet etching is difficult to complete and needs to be obtained by a dry etching method. In order to obtain a deep, vertically angled silicon microstructure, a time-separated dry etching process, i.e., the "Bosch" process developed by robert Bosch corporation, is mainly used. The process uses plasma-induced fluorocarbon polymers to provide sidewall passivation protection and fluorine-based plasma chemistry to etch down silicon, wherein sidewall passivation protection (deposition step) and fluorine-based plasma chemistry (etch step) alternate. As the Bosch process adopts a mode of alternately performing deposition and etching, a scallop structure is inevitably formed, so that the side wall roughness is large. Generally, scallops on the top of deep silicon structures are the largest in size (the side walls are the roughest), and therefore, reducing the roughness of the top of deep silicon structures is an urgent issue to be addressed.
Since the size of the scallop is closely related to the single-step etching time, the longer the single-step etching time is, the larger the scallop size is. On the other hand, it is impossible to reduce the scallop size by unlimitedly reducing the single-step etching time (chamber gas switching takes time, and the effect of etching deep silicon is not taken at the time of gas switching but the mask on the wafer surface is consumed, resulting in a drop in the selectivity). Therefore, segmented etching is a viable solution. However, since the method of increasing the aspect ratio and the verticality in the plasma deep silicon etching mainly applies "increasing" (ramping) to the etching parameters, it is also an important challenge how to smooth or connect the "increasing" of each segment during the segmented etching.
Disclosure of Invention
The embodiment of the application aims to provide an etching process method and an etching process device, which are used for solving the problems that the size of a top scallop is overlarge and smooth transition is difficult to realize among sectional etching processes in the existing etching process.
In order to solve the above technical problem, the embodiment of the present application is implemented as follows:
in one aspect, an embodiment of the present application provides an etching process method, including:
acquiring first etching parameter information corresponding to the etching process and sectional parameter information for performing sectional execution on the etching process; the first etching parameter information comprises the total cycle number of the original process steps of the etching process, a single-step initial process parameter and a single-step final process parameter; the segmentation parameter information comprises the number of segments of the etching process and segmentation factors respectively corresponding to each segmentation etching process;
determining second etching parameter information corresponding to each segmented etching process according to the first etching parameter information and the segmented parameter information; each of the segmented etching processes comprises a plurality of cyclically executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each of the segmented etching processes, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process;
and executing the etching process in sections according to the second etching parameter information respectively corresponding to each sectional etching process.
On the other hand, an embodiment of the present application provides an etching process apparatus, including:
the acquisition module is used for acquiring first etching parameter information corresponding to the etching process and sectional parameter information for performing sectional execution on the etching process; the first etching parameter information comprises the total cycle number of the original process steps of the etching process, a single-step initial process parameter and a single-step final process parameter; the segmentation parameter information comprises the number of segments of the etching process and segmentation factors respectively corresponding to each segmentation etching process;
the determining module is used for determining second etching parameter information corresponding to each segmented etching process according to the first etching parameter information and the segmented parameter information; each of the segmented etching processes comprises a plurality of cyclically executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each of the segmented etching processes, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process;
and the execution module is used for executing the etching process in sections according to the second etching parameter information respectively corresponding to each section etching process.
In another aspect, an embodiment of the present application provides an etching process apparatus, which includes a processor and a memory electrically connected to the processor, where the memory stores a computer program, and the processor is configured to invoke and execute the computer program from the memory to implement the above etching process method.
In still another aspect, an embodiment of the present application provides a storage medium for storing a computer program, where the computer program is executable by a processor to implement the above etching process method.
By adopting the technical scheme of the embodiment of the application, the first etching parameter information corresponding to the etching process and the sectional parameter information for performing sectional execution on the etching process are obtained, the second etching parameter information corresponding to each sectional etching process is determined according to the first etching parameter information and the sectional parameter information, and the etching process is performed in sections according to the second etching parameter information corresponding to each sectional etching process. In the technical scheme, each segmented etching process comprises a plurality of circularly executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each segmented etching process, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process, so that the effect of smooth connection between each segmented etching process is realized, the smooth transition between any two adjacent segmented etching processes can be realized, and the etching effect is improved. In addition, the etching process can be executed in sections according to the second etching parameter information respectively corresponding to each section etching process, so that the effect of reducing the size of the top scallop can be realized by adjusting each second etching parameter information in a targeted manner.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without any creative effort.
FIG. 1 is a schematic flow chart diagram of a method of an etch process according to an embodiment of the present application;
FIG. 2 is a graphical illustration of the results of an etch process according to one embodiment of the present application;
FIG. 3 is a graphical illustration of the results of an etch process according to another embodiment of the present application;
FIG. 4 is a graphical illustration of the results of an etch process according to another embodiment of the present application;
FIG. 5 is a graphical illustration of the results of an etch process according to another embodiment of the present application;
FIG. 6 is a schematic flow chart diagram of a method of an etch process according to another embodiment of the present application;
FIG. 7 is a schematic diagram of an apparatus for an etch process according to an embodiment of the present application;
fig. 8 is a schematic diagram of a hardware structure of an etching process apparatus according to an embodiment of the present application.
Detailed Description
The embodiment of the application provides an etching process method and device, which are used for solving the problems that the size of a top scallop is overlarge and smooth transition is difficult to realize among sectional etching processes in the conventional etching process.
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 1 is a schematic flow chart of an etching process method according to an embodiment of the present application, as shown in fig. 1, the method including:
s102, acquiring first etching parameter information corresponding to the etching process and sectional parameter information for performing sectional execution on the etching process.
The first etching parameter information comprises the total cycle number of the original process steps of the etching process, a single-step initial process parameter and a single-step final process parameter, and the segmentation parameter information comprises the number of segments of the etching process and segmentation factors corresponding to each segment etching process.
In this embodiment, the first etching parameter information is an original process recipe corresponding to the etching process. The original process recipe comprises cyclically executed process steps, wherein the process steps comprise at least one deposition step and at least one etching step, and the plurality of deposition steps and the plurality of etching steps can be arranged according to a specific etching process. For example, in an etching process, the process steps may be deposition step-etching step in sequence. As another example, in an etching process, the process steps may be deposition steps followed by etching steps.
And S104, determining second etching parameter information corresponding to each segmented etching process according to the first etching parameter information and the segmented parameter information.
Each segmented etching process comprises a plurality of circularly executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each segmented etching process, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process.
And S106, executing the etching process in sections according to the second etching parameter information respectively corresponding to each sectional etching process.
In this embodiment, by obtaining first etching parameter information corresponding to an etching process and segment parameter information for performing segment execution on the etching process, second etching parameter information corresponding to each segment etching process is determined according to the first etching parameter information and the segment parameter information, and the etching process is performed in segments according to the second etching parameter information corresponding to each segment etching process. In the technical scheme, each segmented etching process comprises a plurality of circularly executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each segmented etching process, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process, so that the effect of smooth connection between each segmented etching process is realized, the smooth transition between any two adjacent segmented etching processes can be realized, and the etching effect is improved. In addition, the etching process can be executed in sections according to the second etching parameter information respectively corresponding to each section etching process, so that the effect of reducing the size of the top scallop can be realized by adjusting each second etching parameter information in a targeted manner.
In one embodiment, the single-step initial process parameter includes a single-step initial process time, the single-step final process parameter includes a single-step final process time, the single-step initial parameter includes a single-step initial time, the single-step final parameter includes a single-step final time, and the piecewise factor includes a piecewise scale.
The single-step starting time respectively corresponding to each segmented etching process can be the single-step starting time respectively corresponding to the deposition step and the etching step in each segmented etching process, and the single-step ending time respectively corresponding to each segmented etching process can be the single-step ending time respectively corresponding to the deposition step and the etching step in each segmented etching process.
Wherein the segmentation proportion can be a segmentation coefficient gammahI.e. the ratio between the number of cycles of each segmented etching process, the segmentation coefficient gammahSatisfy sigma-gammah totalAnd 1, namely, the sum of the segment coefficients respectively corresponding to the segment etching processes is equal to 1. For example, if the etching process is divided equally into two etching stages, γ is1＝γ2＝0.5。
Since "ramping" is applied to the etching parameters is an important method for improving the aspect ratio and the verticality in the plasma deep silicon etching, the biggest relationship with the scallop size is the single step deposition time and the single step etching time. Therefore, for the unsegmented etching process, the single-step deposition time can be set according to the current cycle number n and the total cycle number ntotalFrom a single-step start time tdep initialAverage increment to single step end time tdep finalThe incremental algorithm is tdep＝tdep initial+(tdep final-tdep initial)*n/ntotal(ii) a The single-step etching time is determined according to the current cycle number n and the total cycle number ntotalFrom a single-step start time tetch initialAverage increment to single step end time tetch finalThe incremental algorithm is tetch＝tetch initial+(tetch final-tetch initial)*n/ntotal. For the segmented etching process, the incremental increase of the single-step deposition (or etching) time can be set to satisfy the algorithm: t is thkl＝thkl initial+(thkl final-thkl initial)*n/ntotal hWherein h is used for distinguishing different segment etching processes (h ═ 1, 2, 3, …); k is used to distinguish between deposition step or etching step (k) dep or etch; l is used for distinguishing different deposition steps or etching steps in each segmented etching process (l is 1, 2, 3, …); n istotal hAnd (3) representing the cycle number corresponding to the h-th stage etching process, wherein n is the current cycle number executed in the h-th stage etching process.
In this embodiment, the following steps a1-a2 may be performed to determine second etching parameter information corresponding to each segmented etching process according to the first etching parameter information corresponding to the etching process and the segmented parameter information for performing segmented execution on the etching process:
and step A1, calculating the cycle times respectively corresponding to each segmented etching process according to the segmented proportion and the total cycle times respectively corresponding to each segmented etching process.
Step A2, calculating the single step start time and the single step end time respectively corresponding to each segmented etching process according to the single step start process time, the single step end process time and the segmented proportion respectively corresponding to each segmented etching process of the original process steps of the etching process.
In this embodiment, the cycle number, the single-step starting time and the single-step ending time respectively corresponding to each segmented etching process are obtained through calculation according to the first etching parameter information corresponding to the etching process and the segmented parameter information for performing segmented execution on the etching process, so that the accuracy of the obtained cycle number, single-step starting time and single-step ending time is ensured, and the effect of quickly and efficiently obtaining the second etching parameter information is achieved.
In one embodiment, the single-step start process parameter includes a single-step start process power, the single-step end process parameter includes a single-step end process power, the single-step start parameter includes a single-step start power, the single-step end parameter includes a single-step end power, and the piecewise factor includes a piecewise proportion.
The single-step initial power respectively corresponding to each segmented etching process may be a single-step initial power respectively corresponding to the etching-step lower electrode power in each segmented etching process, and the single-step final power respectively corresponding to each segmented etching process may be a single-step final power respectively corresponding to the etching-step lower electrode power in each segmented etching process. The power of the electrode under the etching step and parameters (other parameters respectively corresponding to each segmented etching process) except the single-step deposition time and the single-step etching time can also be increased in an increasing way. For example, for the unsegmented etching process, the lower electrode power of the etching step can be set according to the current cycle number n and the total cycle number ntotalFrom a single step starting power PinitialAverage incremental to single step final power PfinalThe increasing algorithm is P ═ Pinitial+(Pfinal-Pinitial)*n/ntotal. For the segmented etching process, the incremental increase of the electrode power in the etching step can be set to satisfy the algorithm: phij＝Phij initial+(Phij final-Phij initial)*n/ntotal hWherein h is used for distinguishing different segment etching processes (h ═ 1, 2, 3, …); in practical application, i may be a parameter other than single-step deposition time and single-step etching time, and may be characterized by the name of a specific parameter, or by a number such as 1, 2, 3, etc., and j is used to distinguish between deposition steps or etching steps (j ═ kl is used to distinguish between different deposition steps or etching steps in each segmented etching process); n istotal hAnd (3) representing the cycle number corresponding to the h-th stage etching process, wherein n is the current cycle number executed in the h-th stage etching process.
In this embodiment, when the second etching parameter information corresponding to each of the segmented etching processes is determined according to the first etching parameter information corresponding to the etching process and the segmented parameter information for performing segmented execution on the etching process, the single-step initial power and the single-step final power corresponding to each of the segmented etching processes can be calculated according to the single-step initial process power, the single-step final process power of the original process step of the etching process and the segmented proportion corresponding to each of the segmented etching processes.
In this embodiment, the single-step initial power and the single-step final power respectively corresponding to each segmented etching process are obtained by calculating the first etching parameter information corresponding to the etching process and the segmented parameter information for performing segmented execution on the etching process, so that the accuracy of the obtained single-step initial power and single-step final power is ensured, and the effect of quickly and efficiently obtaining the second etching parameter information is achieved.
In one embodiment, the segment parameter information further includes a start conversion coefficient and a final conversion coefficient respectively corresponding to each segment etching process. In any two adjacent segmented etching processes, the final conversion coefficient corresponding to the previous segmented etching process is the same as the initial conversion coefficient corresponding to the next segmented etching process. The step A1 can be specifically executed as the following steps B1-B3:
wherein, alpha can be usedhmRepresenting the conversion coefficient corresponding to each segmented etching process, h is used forDifferent segmented etching processes (h ═ 1, 2, 3, …), m ═ initial or final (α) are distinguishedh initialRepresenting the initial conversion coefficient alpha corresponding to the h-stage etching processh finalAnd characterizing a final conversion coefficient corresponding to the h-th section etching process). Alpha is alphahm>1 denotes increased, αhm<1 means smaller. When the single step starting time or the single step ending time is converted by a coefficient alphahmAfter the change, the total number of cycles of the original process step of the corresponding etching process should be multiplied by
Figure BDA0002986271190000071
(i.e. the
Figure BDA0002986271190000072
) So as to ensure that the total etching process time is not changed.
And step B1, calculating the first cycle times respectively corresponding to each segmented etching process according to the segmented proportion and the total cycle times respectively corresponding to each segmented etching process.
And step B2, converting the first cycle times according to the initial conversion coefficient and the final conversion coefficient respectively corresponding to each segmented etching process to obtain a first conversion result.
And step B3, calculating the cycle times corresponding to each segmented etching process according to the first calculation result.
In this embodiment, the first cycle number is converted by the initial conversion coefficient and the final conversion coefficient respectively corresponding to each segmented etching process, so that the cycle number respectively corresponding to each segmented etching process is obtained, the determined cycle number is accurate, and the accuracy of executing the etching process in a segmented manner is improved.
In one embodiment, the segment parameter information includes correction factors corresponding to the respective segment etching processes. Correction factor available betahmCharacterisation, since the extra time is required to switch between the deposition step and the etch step, during which the etch is carried out to a certain extent (weaker than the normal etch step), the single step start time or the single step end time is reduced by the conversion factor αhmChange, carveThe total number of cycles of the original process step of the etching process is multiplied by
Figure BDA0002986271190000081
Then, the total cycle number of the original process step of the etching process should be multiplied by a correction factor betahmTo ensure that the total etching depth is not changed.
After step B3 is executed, the cycle number corresponding to each segmented etching process may be corrected according to the correction factor corresponding to each segmented etching process, so as to obtain the corrected cycle number corresponding to each segmented etching process.
In this embodiment, the cycle number corresponding to each segmented etching process is corrected by the correction factor corresponding to each segmented etching process, so as to obtain the corrected cycle number corresponding to each segmented etching process, thereby improving the accuracy of the determined cycle number and the accuracy of the segmented etching process.
According to the embodiment, when the cycle times respectively corresponding to the segmented etching processes are calculated according to the segmented proportion respectively corresponding to the segmented etching processes and the total cycle times of the original process steps of the etching process, the cycle times corresponding to the h-th segment etching process meet the following requirements:
Figure BDA0002986271190000082
wherein n istotal 0Representing the total number of cycles of the original process step of the etching process.
In one embodiment, the product of the initial conversion coefficient and the final conversion coefficient corresponding to the segment etching process executed first in each segment etching process is less than 1. The step A2 can be specifically executed as the following steps C1-C3:
and step C1, calculating a first start time and a first end time respectively corresponding to each segmented etching process according to the single-step start process time, the single-step end process time and the segmented proportion respectively corresponding to each segmented etching process of the original process step of the etching process.
And step C2, respectively converting the first initial time and the first final time according to the initial conversion coefficient and the final conversion coefficient respectively corresponding to each segmented etching process to obtain a second conversion result.
And step C3, calculating the single step starting time and the single step ending time respectively corresponding to each segmented etching process according to the second calculation result.
In this embodiment, by setting the product of the initial conversion coefficient and the final conversion coefficient corresponding to the first-performed segmented etching process in each segmented etching process to be less than 1, the initial time and the final time corresponding to the first-performed segmented etching process are converted according to the initial conversion coefficient and the final conversion coefficient, so as to obtain the single-step initial time and the single-step final time corresponding to the first-performed segmented etching process, thereby achieving the effect of reducing the single-step process time when the etching process starts to be performed, and thus reducing the size of the top scallop of the etched structure and reducing the roughness of the top sidewall of the etched structure. In addition, the single-step process time is only reduced when the etching process is started, and the single-step process time is not reduced in the whole etching process, so that the top appearance of the etched structure can be ensured, and the selection ratio is not obviously reduced.
In one embodiment, the product of the starting reduction coefficient and the final reduction coefficient corresponding to the last segment etching process executed in each segment etching process is less than 1. In this embodiment, the specific implementation of the step a2 can refer to the steps C1-C3, which are not described herein again.
In this embodiment, by setting the product of the initial conversion coefficient and the final conversion coefficient corresponding to the last performed segmented etching process in each segmented etching process to be less than 1, the initial time and the final time corresponding to the last performed segmented etching process are converted according to the initial conversion coefficient and the final conversion coefficient, so as to obtain the single-step initial time and the single-step final time corresponding to the last performed segmented etching process, thereby achieving the effect of reducing the single-step process time in the last performed etching process, and thus reducing the bottom notch of the etched structure.
According to the above embodiment, for the first executionThe sectional etching process needs to reduce the size of the top scallop of the etched structure, so the single-step process time of the sectional etching process which is executed firstly needs to be reduced, and the reduction of the size of the top scallop is realized by reducing the single-step starting time in the sectional etching process which is executed firstly, which corresponds to alpha1initial<1, the final time of the first step in the segment etching process can be reduced or increased or unchanged, but alpha is required to satisfy1initial*α1final<1, to achieve the effect of reducing the size of the top scallop of the etched structure. Corresponding to the single step start time, t can be set1kl initial＝t0kl initial*α1initial(where 0 represents the original unsegmented etch process, and 0 has no progressive relationship with the segmented 1, 2, 3, etc.). Because smooth transition is needed between each subsection etching process, the single-step starting time corresponding to the next subsection etching process should be equal to the single-step ending time corresponding to the previous subsection etching process, that is: t is t(h+1)kl initial＝thkl final. The single-step final time corresponding to each segmented etching process needs to be based on the final conversion coefficient (alpha) in the segmented parameter informationh final) To determine, i.e.: t is thkl final＝t0kl initial+(t0kl final–t0kl initial)*Σγh*αh final. Wherein, Σ γhNot equal to 1, only sigma gammah total＝1。
According to the algorithms and recursion relations in the above embodiment, only the etching in several segments (the number of segments h of the etching process) needs to be determinedtotal) And the segment ratio (gamma) between the segment etching processesh) And determining an initial conversion factor (alpha) corresponding to the first segment etching process1initial) Final conversion factor (alpha) corresponding to each segment etching processh final) And correction factors beta respectively corresponding to each segmented etching processhm(for the structure with high depth-to-width ratio, the structure can be approximately equal to 1), the etching equipment can automatically execute each segmented etching process.Wherein the correction factor betahmThe specific value of (a) is related to the hardware configuration of the etching equipment and the specific process requirement, and can be determined only by performing experiments.
Specifically, when the method is implemented by software, aiming at the current cycle number n in the h-section etching process, the single-step process time meets the following requirements:
Figure BDA0002986271190000101
wherein t is1kl initial＝t0kl initial*α1initial，thkl final＝t0kl initial+(t0kl final–t0kl initial)*Σγh*αh final，t(h+1)kl initial＝thkl final。
Due to PhijIs not influenced by factors such as the conversion coefficient after segmentation (therefore, P1kl initial＝P0kl initial) However, the number of segments of the etching process and the segment proportion corresponding to each segment etching process are related, and also for the purpose of smooth transition, the single-step starting power corresponding to the next segment etching process should be equal to the single-step ending power corresponding to the previous segment etching process, that is: p(h+1)kl initial＝Phkl finalAnd the single-step final power corresponding to each segmented etching process should satisfy: phkl final＝Phkl initial+(P0ij final–P0ij initial)*γh. Specifically, when the method is implemented by software, aiming at the current cycle number n in the h-section etching process, the single-step process power is as follows:
Figure BDA0002986271190000102
wherein n istotal 0Representing the total number of cycles of the original process step of the etching process.
In one embodiment, when the etching process is executed in a segmented manner according to the second etching parameter information corresponding to each segmented etching process, the segmented etching process can be executed according to the second etching parameter information corresponding to the segmented etching process to be executed currently, and whether the cycle times corresponding to the segmented etching process are all executed or not is judged; if so, executing the next subsection etching process of the subsection etching process; if not, continuing to execute the process steps in the segmented etching process.
In the embodiment, whether the segmented etching process is completed or not can be accurately determined by judging whether the cycle times corresponding to the segmented etching process to be executed at present are all executed or not, so that the content of the next step of execution is determined, and the accuracy of the segmented etching process is improved.
In one embodiment, the sum of the segment ratios respectively corresponding to the segment etching processes is 1. After second etching parameter information corresponding to each segmented etching process is determined according to first etching parameter information corresponding to the etching process and segmented parameter information for performing segmented execution on the etching process, segmentation can be performed again on each segmented etching process to obtain a plurality of subsections.
And the sum of the section proportions corresponding to the plurality of subsections in each section etching process is 1. For the etching process after multiple segmentation, the sum of the proportions of all the segments in the etching process meets the following requirements: sigma (gamma)h*γhh’) 1, wherein γhFor the corresponding segment proportion, gamma, of each segment etching processhh’The segment proportion corresponding to each subsection in each segmented etching process.
Determining second etching parameter information corresponding to each segmented etching process according to first etching parameter information corresponding to the etching process and segmented parameter information for performing segmented execution on the etching process, determining third etching parameter information corresponding to each subsection when performing the etching process in a segmented manner according to the second etching parameter information corresponding to each segmented etching process, and performing each segmented etching process in a segmented manner according to the third etching parameter information corresponding to each subsection.
The determining manner of the third etching parameter information may refer to the determining manner of the second etching parameter information in the above embodiments, and details are not repeated here.
In the embodiment, the etching parameter information for executing the etching process in a segmented manner can be correspondingly determined according to the first etching parameter information corresponding to the etching process and the change of the segmented parameter information for executing the etching process in a segmented manner, so that the automation effect of the etching process is improved.
In addition, the scheme can be verified by using specific first etching parameter information (an original process formula corresponding to the etching process) and second etching parameter information determined according to the first etching parameter information corresponding to the etching process and the segmentation parameter information, and etching results obtained by the respectively executed etching processes.
For example, the first etching parameter information is shown in table 1, and the total cycle number corresponding to the etching process is 275.
TABLE 1 first etch parameter information
Figure BDA0002986271190000111
Wherein, the lower electrode power represents the increment of the lower electrode power from the single-step initial process power to the single-step final process power, and the single-step time represents the increment of the single-step process time from the single-step initial process time to the single-step final process time.
Wherein, the deposition step 1-1 represents the 1 st deposition step of the 1 st cycle, the etching step 1-1 represents the 1 st etching step of the 1 st cycle, and so on, when the segmented etching process is performed, the deposition step and the etching step of different segments (or different cycles in the segments) can be represented. The etching process is performed on the semiconductor element by using the etching parameter information, and the obtained etching result is shown in fig. 2. Wherein, fig. 2 (a) is an enlarged view of the top scallop dimension, (b) is the top profile, (c) the top mask remains, (d) the middle profile, (e) the global profile, (f) the bottom profile. The scallops and transverse folds are evident from fig. 2 (a).
In the present example, the parameters α, β, γ and htotalRespectively taking values: alpha is alpha1initial＝0.5，α1final＝1，α2final＝1，β1＝β2＝1，γ1＝0.27，γ2＝0.73，htotalThe calculated second etching parameter information is shown in table 2:
TABLE 2 second etch parameter information
Figure BDA0002986271190000121
Wherein, the lower electrode power represents the increment of the lower electrode power from the single-step starting power to the single-step ending power, and the single-step time represents the increment of the single-step process time from the single-step starting time to the single-step ending time.
Wherein, the cycle number corresponding to the process step of the deposition step 1-1 and the etching step 1-1 is 100, and the cycle number corresponding to the process step of the deposition step 2-1 and the etching step 2-1 is 200. The etching process is performed on the semiconductor element in sections by using the etching parameter information, and the obtained etching result is shown in fig. 3. Wherein, fig. 3 (a) is the overall morphology, (b) is the top morphology, (c) the top scallop size. It can be seen that the top scallop size decreases from about 100nm (nanometers) in fig. 2 to about 30nm in fig. 3.
In one embodiment, the present solution can be used to reduce the bottom gap in addition to the top scallop size. The bottom gap is formed by the fact that an etching stop layer is arranged at the bottom, charges are accumulated on the stop layer, when excessive etching occurs, charged plasma components are reflected to the side wall by the charges on the stop layer to form a gap, the scheme for solving the problem in the prior art is that pulses are added to lower electrode power, the percentage of the time of pulse opening to the total time is called duty ratio, the charges on the stop layer are released when the pulses are closed, therefore, the gap problem is avoided, and the smaller the duty ratio, the better the effect is. However, the application of the duty ratio cannot completely eliminate the notch, and particularly, in a structure with a high depth-to-width ratio and a small absolute size, charges are difficult to diffuse, and the notch problem can be further avoided by the segmented etching on the basis of the application of the duty ratio. Similar to reducing the single step process time of the first performed segment etch process when reducing the size of the top scallop, it is desirable to reduce the single step process time of the last performed segment etch process when reducing the undercut. In the following description of an embodiment, the first etching parameter information is shown in table 3, and the total cycle number is 450.
TABLE 3 first etch parameter information
Figure BDA0002986271190000131
Wherein the C4F8 flow indicates the C4F8 flow is increasing from the single step start process flow to the single step end process flow and the single step time indicates the time for the single step process is increasing from the single step start process time to the single step end process time. The etching process is performed on the semiconductor element by using the etching parameter information, and the obtained etching result is shown in fig. 4. Wherein, in fig. 4, (a) is the global profile, (b) is the top profile, (c) is the top right profile, and (d) is the bottom profile.
In this embodiment, when the etching process reaches 90% of the total cycle time of the process recipe shown in table 3, the recipe with shorter time of single step process is used instead, that is, the parameters α, β, γ and h of this schemetotalRespectively taking values: alpha is alpha1initial＝1，α1final＝1，α2final＝0.5，β1＝β2＝1，γ1＝0.9，γ2＝0.1，htotalThe calculated second etching parameter information is shown in table 4:
TABLE 4 second etch parameter information
Figure BDA0002986271190000141
Wherein the C4F8 flow rate indicates the C4F8 flow rate was increased from the single step start flow rate to the single step end flow rate, and the single step time indicates the single step process time was increased from the single step start time to the single step end time. The cycle number corresponding to the process step in which the deposition step 1-1, the etching step 1-1 and the etching step 1-2 are located is 405, and the cycle number corresponding to the process step in which the deposition step 2-1, the etching step 2-1 and the etching step 2-2 are located is 60. The etching process is performed on the semiconductor element in sections by using the etching parameter information, and the obtained etching result is shown in fig. 5. Wherein, in fig. 5, (a) is the global profile, (b) is the top profile, (c) is the top right profile, and (d) is the bottom profile. The size of the undercut is seen to decrease from about 300nm in FIG. 4 to about 70nm in FIG. 5.
Fig. 6 is a schematic flow chart of a method of an etch process according to another embodiment of the present application, as shown in fig. 6, the method comprising:
s601, acquiring first etching parameter information corresponding to the etching process and sectional parameter information for performing sectional execution on the etching process. The first etching parameter information comprises the total cycle number of the original process steps of the etching process, a single-step initial process parameter and a single-step final process parameter. The segmentation parameter information comprises the number of segments of the etching process, the segmentation proportion corresponding to each segment etching process, a correction factor, an initial conversion coefficient and a final conversion coefficient.
And the product of the initial conversion coefficient and the final conversion coefficient corresponding to the segmented etching process executed firstly in each segmented etching process is less than 1. And the product of the initial conversion coefficient and the final conversion coefficient corresponding to the segmented etching process executed last in each segmented etching process is less than 1.
S602, calculating the first cycle times respectively corresponding to each segmented etching process according to the segmented proportion and the total cycle times respectively corresponding to each segmented etching process.
S603, converting the first cycle number according to the initial conversion coefficient and the final conversion coefficient respectively corresponding to each segmented etching process to obtain a first conversion result, and calculating the cycle number respectively corresponding to each segmented etching process according to the first conversion result.
S604, correcting the cycle times respectively corresponding to each segmented etching process according to the correction factors respectively corresponding to each segmented etching process to obtain the corrected cycle times respectively corresponding to each segmented etching process.
And S605, calculating the single-step initial parameter and the single-step final parameter respectively corresponding to each segmented etching process according to the single-step initial process parameter, the single-step final process parameter and the segmented proportion respectively corresponding to each segmented etching process.
In any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process.
In this embodiment, the single-step initial process parameter may include a single-step initial process time, the single-step final process parameter may include a single-step final process time, the single-step initial parameter may include a single-step initial time, and the single-step final parameter may include a single-step final time. S605 may be specifically executed as: firstly, calculating first starting time and first ending time respectively corresponding to each segmented etching process according to single-step starting process time, single-step ending process time and segmented proportion respectively corresponding to each segmented etching process; secondly, respectively converting the first initial time and the first final time according to the initial conversion coefficient and the final conversion coefficient respectively corresponding to each segmented etching process to obtain a second conversion result; and finally, calculating the single step starting time and the single step ending time respectively corresponding to each segmented etching process according to the second calculation result.
In this embodiment, the execution order of S605 is not limited. For example, in addition to the execution sequence of executing S602 to S604 first and then executing S605 in this embodiment, S605 and then S602 to S604 may be executed first, or S602 to S604 and S605 may be executed simultaneously.
And S606, respectively determining second etching parameter information corresponding to each segmented etching process according to the single-step initial parameter, the single-step final parameter and the corrected cycle number corresponding to each segmented etching process.
And S607, executing the sectional etching process according to second etching parameter information corresponding to the sectional etching process to be executed currently, wherein the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and the corrected cycle number corresponding to the sectional etching process.
S608, judging whether the corrected cycle times corresponding to the segmented etching process to be executed at present are completely executed; if yes, executing S609; if not, go to S610.
And S609, executing the next subsection etching process of the subsection etching process.
S610, continuing to execute the process steps in the segmented etching process.
The specific implementation of the above S601-S610 is described in detail in the above embodiments, and is not described herein again.
In this embodiment, by obtaining first etching parameter information corresponding to an etching process and segment parameter information for performing segment execution on the etching process, second etching parameter information corresponding to each segment etching process is determined according to the first etching parameter information and the segment parameter information, and the etching process is performed in segments according to the second etching parameter information corresponding to each segment etching process. In the technical scheme, each segmented etching process comprises a plurality of circularly executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each segmented etching process, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process, so that the effect of smooth connection between each segmented etching process is realized, the smooth transition between any two adjacent segmented etching processes can be realized, and the etching effect is improved. In addition, the etching process can be executed in sections according to the second etching parameter information respectively corresponding to each section etching process, so that the effect of reducing the size of the top scallop can be realized by adjusting each second etching parameter information in a targeted manner.
In summary, particular embodiments of the present subject matter have been described. Other embodiments are within the scope of the following claims. In some cases, the actions recited in the claims can be performed in a different order and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing may be advantageous.
Based on the same idea, the etching process method provided by the embodiment of the present application further provides an etching process device.
Fig. 7 is a schematic structural diagram of an etching process apparatus according to an embodiment of the present application, and as shown in fig. 7, the etching process apparatus includes:
an obtaining module 710, configured to obtain first etching parameter information corresponding to an etching process, and segment parameter information for performing segment execution on the etching process; the first etching parameter information comprises the total cycle number of the original process steps of the etching process, a single-step initial process parameter and a single-step final process parameter; the segmentation parameter information comprises the number of segments of the etching process and segmentation factors respectively corresponding to each segmentation etching process;
a determining module 720, configured to determine, according to the first etching parameter information and the segment parameter information, second etching parameter information corresponding to each segment etching process; each segmented etching process comprises a plurality of circularly executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each segmented etching process, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process;
and the executing module 730 is configured to execute the etching process in segments according to the second etching parameter information respectively corresponding to each segment etching process.
In one embodiment, the single-step initial process parameter comprises a single-step initial process time and the single-step final process parameter comprises a single-step final process time; the single-step starting parameter comprises a single-step starting time, and the single-step ending parameter comprises a single-step ending time; the segmentation factor comprises a segmentation scale;
the determining module 720 includes:
the first calculating unit is used for calculating the cycle times respectively corresponding to each segmented etching process according to the segmented proportion and the total cycle times respectively corresponding to each segmented etching process;
and the second calculating unit is used for calculating the single-step starting time and the single-step ending time respectively corresponding to each segmented etching process according to the single-step starting process time, the single-step ending process time and the segmented proportion respectively corresponding to each segmented etching process.
In one embodiment, the single-step initial process parameter further comprises a single-step initial process power, and the single-step final process parameter further comprises a single-step final process power; the single-step starting parameter further comprises a single-step starting power, and the single-step ending parameter further comprises a single-step ending power; the segmentation factor comprises a segmentation scale;
the determining module 720 includes:
and the third calculating unit is used for calculating the single-step initial power and the single-step final power respectively corresponding to each segmented etching process according to the single-step initial process power, the single-step final process power and the segmented proportion respectively corresponding to each segmented etching process.
In one embodiment, the segment parameter information further includes a start conversion coefficient and a final conversion coefficient respectively corresponding to each segment etching process; in any two adjacent segmented etching processes, the final conversion coefficient corresponding to the previous segmented etching process is the same as the initial conversion coefficient corresponding to the next segmented etching process;
the first computing unit is specifically configured to:
calculating the first cycle times respectively corresponding to each segmented etching process according to the segmented proportion and the total cycle times respectively corresponding to each segmented etching process;
converting the first cycle number according to the initial conversion coefficient and the final conversion coefficient respectively corresponding to each segmented etching process to obtain a first conversion result;
and calculating the cycle times respectively corresponding to each segmented etching process according to the first calculation result.
In one embodiment, the product of the initial conversion coefficient and the final conversion coefficient corresponding to the segmented etching process executed first in each segmented etching process is less than 1;
the second computing unit is specifically configured to:
calculating first starting time and first ending time respectively corresponding to each segmented etching process according to the single-step starting process time, the single-step ending process time and the segmented proportion respectively corresponding to each segmented etching process;
respectively converting the first initial time and the first final time according to the initial conversion coefficient and the final conversion coefficient respectively corresponding to each segmented etching process to obtain a second conversion result;
and calculating the single step starting time and the single step ending time respectively corresponding to each segmented etching process according to the second calculation result.
In one embodiment, the segment parameter information further includes correction factors corresponding to each segment etching process;
the first computing unit is further configured to:
and correcting the cycle times respectively corresponding to each segmented etching process according to the correction factor respectively corresponding to each segmented etching process to obtain the corrected cycle times respectively corresponding to each segmented etching process.
In one embodiment, the execution module 730 includes:
the first execution unit is used for executing the segmented etching process according to second etching parameter information corresponding to the segmented etching process to be executed currently;
the judging unit is used for judging whether the cycle times corresponding to the segmented etching process are completely executed or not;
the second execution unit is used for executing the next subsection etching process of the subsection etching process if the first execution unit is used for executing the next subsection etching process of the subsection etching process;
and the third execution unit is used for continuing to execute the process steps in the segmented etching process if the step number is not the same as the step number.
In one embodiment, the sum of the segment proportions respectively corresponding to each segment etching process is 1;
the etching process device also comprises:
the segmentation module is used for segmenting again aiming at each segmentation etching process to obtain a plurality of subsections; the sum of the subsection proportions corresponding to a plurality of subsections in each subsection etching process is 1;
the determining module 720 and the executing module 730 include:
the determining and executing unit is used for determining the third etching parameter information corresponding to each sub-section; and executing each segmented etching process in a segmented manner according to the third etching parameter information respectively corresponding to each subsection.
In one embodiment, the product of the starting reduction coefficient and the final reduction coefficient corresponding to the last segment etching process executed in each segment etching process is less than 1.
In this embodiment, by obtaining first etching parameter information corresponding to an etching process and segment parameter information for performing segment execution on the etching process, second etching parameter information corresponding to each segment etching process is determined according to the first etching parameter information and the segment parameter information, and the etching process is performed in segments according to the second etching parameter information corresponding to each segment etching process. In the device, each segmented etching process comprises a plurality of circularly executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each segmented etching process, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the initial parameter of the first process step of the next segmented etching process, so that the effect of smooth connection between each segmented etching process is realized, the smooth transition between any two adjacent segmented etching processes can be realized, and the etching effect is improved. In addition, the etching process can be executed in sections according to the second etching parameter information respectively corresponding to each section etching process, so that the effect of reducing the size of the top scallop can be realized by adjusting each second etching parameter information in a targeted manner.
It should be understood by those skilled in the art that the etching apparatus in fig. 7 can be used to implement the etching method described above, and the detailed description thereof should be similar to the above method, and therefore, in order to avoid complexity, no further description is provided herein.
Based on the same idea, an etching process apparatus is further provided in the embodiments of the present application, as shown in fig. 8. The etching process equipment may have a large difference due to different configurations or performances, and may include one or more processors 801 and a memory 802, and the memory 802 may store one or more stored applications or data. Wherein the memory 802 may be a transient storage or a persistent storage. The application program stored in memory 802 may include one or more modules (not shown), each of which may include a series of computer-executable instructions for an etch process tool. Still further, the processor 801 may be configured to communicate with the memory 802 to execute a series of computer-executable instructions in the memory 802 on the etch process equipment. The etch process apparatus may also include one or more power supplies 803, one or more wired or wireless network interfaces 804, one or more input/output interfaces 805, one or more keyboards 806.
In particular, in this embodiment, the etching process apparatus includes a memory and one or more programs, wherein the one or more programs are stored in the memory, and the one or more programs may include one or more modules, and each module may include a series of computer-executable instructions for the etching process apparatus, and the one or more programs configured to be executed by the one or more processors include computer-executable instructions for:
acquiring first etching parameter information corresponding to an etching process and sectional parameter information for performing sectional execution on the etching process; the first etching parameter information comprises the total cycle number of the original process steps of the etching process, a single-step initial process parameter and a single-step final process parameter; the segmentation parameter information comprises the number of segments of the etching process and segmentation factors respectively corresponding to each segmentation etching process;
determining second etching parameter information corresponding to each segmented etching process according to the first etching parameter information and the segmented parameter information; each segmented etching process comprises a plurality of circularly executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each segmented etching process, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process;
and executing the etching process in sections according to the second etching parameter information respectively corresponding to each sectional etching process.
In this embodiment, by obtaining first etching parameter information corresponding to an etching process and segment parameter information for performing segment execution on the etching process, second etching parameter information corresponding to each segment etching process is determined according to the first etching parameter information and the segment parameter information, and the etching process is performed in segments according to the second etching parameter information corresponding to each segment etching process. In the equipment, each segmented etching process comprises a plurality of circularly executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each segmented etching process, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the initial parameter of the first process step of the next segmented etching process, so that the effect of smooth connection between each segmented etching process is realized, the smooth transition between any two adjacent segmented etching processes can be realized, and the etching effect is improved. In addition, the etching process can be executed in sections according to the second etching parameter information respectively corresponding to each section etching process, so that the effect of reducing the size of the top scallop can be realized by adjusting each second etching parameter information in a targeted manner.
The embodiment of the present application further provides a storage medium, where the storage medium stores one or more computer programs, where the one or more computer programs include instructions, and when the instructions are executed by etching process equipment including multiple application programs, the instructions can enable the etching process equipment to execute each process of the above etching process method embodiment, and can achieve the same technical effect, and in order to avoid repetition, details are not repeated here.
The systems, devices, modules or units illustrated in the above embodiments may be implemented by a computer chip or an entity, or by a product with certain functions. One typical implementation device is a computer. In particular, the computer may be, for example, a personal computer, a laptop computer, a cellular telephone, a camera phone, a smartphone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.
For convenience of description, the above devices are described as being divided into various units by function, and are described separately. Of course, the functionality of the units may be implemented in one or more software and/or hardware when implementing the present application.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
In a typical configuration, a computing device includes one or more processors (CPUs), input/output interfaces, network interfaces, and memory.
The memory may include forms of volatile memory in a computer readable medium, Random Access Memory (RAM) and/or non-volatile memory, such as Read Only Memory (ROM) or flash memory (flash RAM). Memory is an example of a computer-readable medium.
Computer-readable media, including both non-transitory and non-transitory, removable and non-removable media, may implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), Read Only Memory (ROM), Electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), Digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information that can be accessed by a computing device. As defined herein, a computer readable medium does not include a transitory computer readable medium such as a modulated data signal and a carrier wave.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The application may be described in the general context of computer-executable instructions, such as program modules, being executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform particular tasks or implement particular abstract data types. The application may also be practiced in distributed computing environments where tasks are performed by remote processing devices that are linked through a communications network. In a distributed computing environment, program modules may be located in both local and remote computer storage media including memory storage devices.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims (10)

1. An etching process method is characterized by comprising the following steps:
acquiring first etching parameter information corresponding to the etching process and sectional parameter information for performing sectional execution on the etching process; the first etching parameter information comprises the total cycle number of the original process steps of the etching process, a single-step initial process parameter and a single-step final process parameter; the segmentation parameter information comprises the number of segments of the etching process and segmentation factors respectively corresponding to each segmentation etching process;
determining second etching parameter information corresponding to each segmented etching process according to the first etching parameter information and the segmented parameter information; each of the segmented etching processes comprises a plurality of cyclically executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each of the segmented etching processes, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process;
and executing the etching process in sections according to the second etching parameter information respectively corresponding to each sectional etching process.
2. The method of claim 1, wherein the single-step initial process parameter comprises a single-step initial process time and the single-step final process parameter comprises a single-step final process time; the single step start parameter comprises a single step start time, and the single step end parameter comprises a single step end time; the segmentation factor comprises a segmentation scale;
the determining, according to the first etching parameter information and the segment parameter information, second etching parameter information corresponding to each segment etching process includes:
calculating the cycle times respectively corresponding to the segmented etching processes according to the segmented proportion and the total cycle times respectively corresponding to the segmented etching processes;
and calculating the single-step starting time and the single-step ending time respectively corresponding to each segmented etching process according to the single-step starting process time, the single-step ending process time and the segmented proportion respectively corresponding to each segmented etching process.
3. The method of claim 1, wherein the single-step initial process parameter further comprises a single-step initial process power, and the single-step final process parameter further comprises a single-step final process power; the single step start parameter further comprises a single step start power, and the single step end parameter further comprises a single step end power; the segmentation factor comprises the segmentation scale;
the determining, according to the first etching parameter information and the segment parameter information, second etching parameter information corresponding to each segment etching process includes:
and calculating the single-step initial power and the single-step final power respectively corresponding to each segmented etching process according to the single-step initial process power, the single-step final process power and the segmented proportion respectively corresponding to each segmented etching process.
4. The method according to claim 2 or 3, wherein the segment parameter information further comprises a start conversion coefficient and a final conversion coefficient respectively corresponding to each segment etching process; in any two adjacent segmented etching processes, the final conversion coefficient corresponding to the previous segmented etching process is the same as the initial conversion coefficient corresponding to the next segmented etching process;
calculating the cycle times respectively corresponding to the segmented etching processes according to the segmented proportion and the total cycle times respectively corresponding to the segmented etching processes, wherein the calculating comprises the following steps:
calculating the first cycle times respectively corresponding to the segmented etching processes according to the segmented proportion and the total cycle times respectively corresponding to the segmented etching processes;
converting the first cycle number according to the initial conversion coefficient and the final conversion coefficient respectively corresponding to each segmented etching process to obtain a first conversion result;
and calculating the cycle times respectively corresponding to the segmented etching processes according to the first calculation result.
5. The method of claim 4, wherein a product of the initial conversion coefficient and the final conversion coefficient corresponding to a segment etching process performed first in each of the segment etching processes is less than 1;
the step of calculating the single-step starting time and the single-step ending time respectively corresponding to each segmented etching process according to the single-step starting process time, the single-step ending process time and the segmented proportion respectively corresponding to each segmented etching process comprises the following steps:
calculating a first starting time and a first ending time respectively corresponding to each segmented etching process according to the single-step starting process time, the single-step ending process time and the segmented proportion respectively corresponding to each segmented etching process;
respectively converting the first starting time and the first ending time according to the starting conversion coefficient and the ending conversion coefficient respectively corresponding to each segmented etching process to obtain a second conversion result;
and calculating the single step starting time and the single step ending time respectively corresponding to each segmented etching process according to the second calculation result.
6. The method of claim 4, wherein the segment parameter information further includes correction factors corresponding to the respective segment etching processes;
after the cycle number respectively corresponding to each segmented etching process is calculated according to the first calculation result, the method further comprises the following steps:
and correcting the cycle times respectively corresponding to each segmented etching process according to the correction factor respectively corresponding to each segmented etching process to obtain the corrected cycle times respectively corresponding to each segmented etching process.
7. The method according to claim 6, wherein the step of executing the etching process in a segmented manner according to the second etching parameter information respectively corresponding to each segmented etching process comprises:
executing the segmented etching process according to the second etching parameter information corresponding to the segmented etching process to be executed currently;
judging whether the cycle times corresponding to the segmented etching process are completely executed;
if so, executing the next subsection etching process of the subsection etching process;
if not, the process steps in the segmented etching process are continuously executed.
8. The method of claim 2, wherein the sum of the segment ratios respectively corresponding to each of the segment etching processes is 1;
after determining second etching parameter information corresponding to each of the segmented etching processes according to the first etching parameter information and the segmented parameter information, the method further includes:
segmenting again aiming at each segmented etching process to obtain a plurality of subsections; the sum of the subsection proportions corresponding to the subsections in each subsection etching process is 1;
determining second etching parameter information corresponding to each segmented etching process according to the first etching parameter information and the segmented parameter information; according to the second etching parameter information respectively corresponding to each segmented etching process, the method for executing the etching process in segments comprises the following steps:
determining third etching parameter information corresponding to each sub-section; and executing each segmented etching process in a segmented manner according to the third etching parameter information corresponding to each subsection.
9. The method of claim 5, wherein a product of the starting reduced coefficient and the final reduced coefficient corresponding to a last performed segmented etching process of the segmented etching processes is less than 1.
10. An etching process apparatus, comprising:
the acquisition module is used for acquiring first etching parameter information corresponding to the etching process and sectional parameter information for performing sectional execution on the etching process; the first etching parameter information comprises the total cycle number of the original process steps of the etching process, a single-step initial process parameter and a single-step final process parameter; the segmentation parameter information comprises the number of segments of the etching process and segmentation factors respectively corresponding to each segmentation etching process;
the determining module is used for determining second etching parameter information corresponding to each segmented etching process according to the first etching parameter information and the segmented parameter information; each of the segmented etching processes comprises a plurality of cyclically executed process steps, the second etching parameter information comprises a single-step initial parameter, a single-step final parameter and a cycle number which are respectively corresponding to each of the segmented etching processes, and in any two adjacent segmented etching processes, the single-step final parameter of the last process step of the previous segmented etching process is the same as the single-step initial parameter of the first process step of the next segmented etching process;
and the execution module is used for executing the etching process in sections according to the second etching parameter information respectively corresponding to each section etching process.
CN202110301034.4A 2021-03-22 2021-03-22 Etching process method and device Pending CN113097062A (en)

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