CN113078616A - Rear-stage direct-current power supply circuit - Google Patents
Rear-stage direct-current power supply circuit Download PDFInfo
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- CN113078616A CN113078616A CN202110361299.3A CN202110361299A CN113078616A CN 113078616 A CN113078616 A CN 113078616A CN 202110361299 A CN202110361299 A CN 202110361299A CN 113078616 A CN113078616 A CN 113078616A
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- 230000005669 field effect Effects 0.000 claims abstract description 59
- 238000001514 detection method Methods 0.000 claims abstract description 26
- 238000011084 recovery Methods 0.000 claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims description 29
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
- H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
- H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
- H02H3/207—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage also responsive to under-voltage
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The invention relates to the field of power supply protection, in particular to a rear-stage direct-current power supply circuit, which comprises a PTC (positive temperature coefficient) self-recovery fuse, an MOS (metal oxide semiconductor) field effect transistor, a load and a voltage detection module, wherein the PTC self-recovery fuse is connected with the load; the source electrode of the MOS field effect transistor is connected with the anode of the power supply through the PTC self-recovery fuse; the grid of the MOS field effect transistor is connected with the negative electrode of the power supply; one end of the voltage detection module is connected with the drain electrode of the MOS field effect transistor, and the other end of the voltage detection module is connected with the source electrode of the MOS field effect transistor; when the rear-stage direct-current power supply circuit disclosed by the invention is used, the design can respectively start the starting voltage detection function, the over-voltage and under-voltage protection detection function and the over-voltage and under-voltage protection detection function according to the reasons caused by faults, and respectively cut off a rear-stage output load voltage loop, so that the problems of the quality of a front-stage switch power supply or an adapter per se, or the faults of unnecessary rear-stage system component damage or self burning of the power supply caused by manual use of the power supply which is not standard, improper operation and the like are avoided.
Description
Technical Field
The invention relates to the field of power supply protection, in particular to a rear-stage direct-current power supply circuit.
Background
In various electronic products, a power supply is a power source of each product, and is the most basic and important, and any fault occurring on the power supply may cause the output voltage or output current of the power supply to lose control, resulting in abnormal operation and unstable operation of the whole electronic product.
Therefore, it is necessary to provide a post-stage dc power supply circuit that solves the above-mentioned problems.
Disclosure of Invention
The invention provides a rear-stage direct-current power supply circuit which effectively protects a rear-stage direct-current power supply system of the whole electronic product and provides a powerful guarantee for the reliable and stable operation of the whole system, aiming at overcoming at least one defect (deficiency) in the prior art.
In order to solve the technical problems, the technical scheme of the invention is as follows: a post-stage direct-current power supply circuit comprises a PTC self-recovery fuse, an MOS field effect transistor and a load, and further comprises a voltage detection module;
the source electrode of the MOS field effect transistor is connected to the anode of the power supply through a PTC self-recovery fuse;
the grid electrode of the MOS field effect transistor is connected with the negative electrode of the power supply;
one end of the voltage detection module is connected with a drain electrode of the MOS field effect transistor, and the other end of the voltage detection module is connected with a source electrode of the MOS field effect transistor;
the load is arranged on a source electrode of the MOS field effect transistor;
further, the voltage detection module comprises a first comparator, a second comparator, a diode D5, a resistor R6, a first potentiometer RP1, a second potentiometer RP2, a third potentiometer RP3 and a triode Q2;
the first pin of the first comparator and the seventh pin of the second comparator are respectively connected to the base of the triode Q2;
the diode D5 and the resistor R6 are connected in series and then are respectively connected with the second pin of the first comparator and the sixth pin of the second comparator;
the third pin of the first comparator is connected with a first potentiometer RP1, and the fifth pin of the second comparator is connected with a second potentiometer RP 2;
and the collector electrode of the triode Q2 is respectively connected with the drain electrode and the source electrode of the MOS field effect transistor, and the emitter electrode is connected with the third potentiometer RP 3.
Furthermore, the device also comprises a resistor R5, a resistor R8, a diode D6 and a diode D7;
a first pin of the first comparator is connected with the base electrode of a triode Q2 after passing through a resistor R5 and a diode D7 in sequence;
and the seventh pin of the second comparator is connected with the base of the triode Q2 after passing through the diode D6 and the resistor R8 in sequence.
Furthermore, a capacitor C6 is disposed between the first pin of the first comparator and the resistor R5.
Furthermore, the MOS field effect transistor further comprises a filter capacitor C2 and a filter capacitor C8 which are connected in parallel, and the load is connected with the drain electrode of the MOS field effect transistor through the filter capacitor C2 and the filter capacitor C8 which are connected in parallel.
The MOS field effect transistor further comprises a resistor R1 and a capacitor C1 which are mutually connected in series, and the source electrode of the MOS field effect transistor is connected to the drain electrode of the MOS field effect transistor after sequentially passing through the resistor R1 and the capacitor C1.
Furthermore, the LED lamp and the resistor R4 which are connected in series are further included, and the source electrode of the MOS field effect transistor is connected to the grid electrode of the MOS field effect transistor after passing through the resistor R4 and the LED lamp in sequence.
Furthermore, the power supply further comprises a resistor R3, and the grid of the MOS field effect transistor is connected with the negative electrode of the power supply through a resistor R3.
Furthermore, the MOS field effect transistor is a P _ MOS field effect transistor.
Compared with the prior art, the technical scheme of the invention has the beneficial effects that:
when the rear-stage direct-current power supply circuit disclosed by the invention is used, if the voltage output is unstable due to the quality problem of a switching power supply or an adapter, the design can start the voltage detection function and cut off the rear-stage output load voltage loop, and when the power supply is artificially used and is not standard, such as an ultrahigh voltage or low voltage power supply is inserted into a product, the design starts the overvoltage and undervoltage protection detection function and cuts off the rear-stage output load voltage loop; when the manual operation is improper, such as positive and negative reverse connection of a power supply, short circuit and the like, the design starts the reverse connection prevention short circuit detection function and cuts off a rear-stage output load voltage loop; the problems of unnecessary damage of elements of a rear-stage system or burnout of the power supply and the like caused by the quality problem of a front-stage switch power supply or the adapter, or the manual use of the power supply which is not standard and improper in operation are avoided.
Drawings
Fig. 1 is a block diagram of the circuit of the present invention.
Fig. 2 is a complete circuit diagram of the present invention.
Fig. 3 is a power supply circuit diagram of the overcurrent overload and reverse plugging prevention detection system of the invention.
FIG. 4 is a circuit diagram of the turn-on voltage, over-voltage, under-voltage detection of the present invention.
In the figure, 1 is a PTC self-recovery fuse, 2 is a MOS field effect transistor, 3 is a load, 4 is a first comparator, and 5 is a second comparator.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the patent; for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted" and "connected" are to be interpreted broadly, e.g., as being either fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, so to speak, as communicating between the two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art. The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
As shown in fig. 1, a post-stage dc power supply circuit includes a PTC self-recovery fuse 1, a MOS field effect transistor 2, a load 3, and a voltage detection module; the source electrode of the MOS field effect transistor is connected with the anode of the power supply through the PTC self-recovery fuse; the grid of the MOS field effect transistor is connected with the negative electrode of the power supply; one end of the voltage detection module is connected with the drain electrode of the MOS field effect transistor, and the other end of the voltage detection module is connected with the source electrode of the MOS field effect transistor; the load is arranged on the source electrode of the MOS field effect transistor;
as shown in fig. 2-4, the voltage detection module includes a first comparator 4, a second comparator 5, a diode D5, a resistor R6, a first potentiometer RP1, a second potentiometer RP2, a third potentiometer RP3, and a transistor Q2; the first pin of the first comparator and the seventh pin of the second comparator are respectively connected to the base of the triode Q2; the diode D5 and the resistor R6 are connected in series and then are respectively connected with the second pin of the first comparator and the sixth pin of the second comparator; the third pin of the first comparator is connected with the first potentiometer RP1, and the fifth pin of the second comparator is connected with the second potentiometer RP 2; the collector of the triode Q2 is respectively connected with the drain and the source of the MOS field effect transistor, and the emitter is connected with the third potentiometer RP 3.
In the invention, the device also comprises a resistor R5, a resistor R8, a diode D6 and a diode D7; a first pin of the first comparator is connected with the base electrode of the triode Q2 after passing through the resistor R5 and the diode D7 in sequence; the seventh pin of the second comparator is connected with the base of the triode Q2 after passing through a diode D6 and a resistor R8 in sequence, wherein a capacitor C6 is arranged between the first pin of the first comparator and the resistor R5, in addition, the MOS field effect transistor further comprises a filter capacitor C2 and a filter capacitor C8 which are mutually connected in parallel, a load is connected with the drain of the MOS field effect transistor after passing through the filter capacitor C2 and the filter capacitor C8 which are connected in parallel, in addition, the MOS field effect transistor further comprises a resistor R1 and a capacitor C1 which are mutually connected in series, and the source of the MOS field effect transistor is connected with the drain of the MOS field effect transistor after passing through the resistor R1 and the capacitor C1 in.
The LED lamp and the resistor R4 which are connected in series are further included, the source electrode of the MOS field effect transistor is connected to the grid electrode of the MOS field effect transistor after passing through the resistor R4 and the LED lamp in sequence, in addition, the resistor R3 is further included, the grid electrode of the MOS field effect transistor is connected with the negative electrode of a power supply through the resistor R3, and in the invention, the MOS field effect transistor is a P _ MOS field effect transistor.
Examples
When overcurrent overload protection is needed, a PTC self-recovery fuse is adopted for overcurrent overload, device type selection is carried out on parameters of the fuse according to system power supply current and voltage, when the rear-stage load current is too large or the large current exceeds the maximum current limiting parameter of the fuse due to improper short circuit of a user, the temperature of the fuse rises, the resistance value immediately becomes infinite, the input voltage of a rear-stage power supply is immediately cut off, and the large current is prevented from burning out related components of a rear-stage loop.
When the power interface needs to be subjected to reverse insertion prevention detection: the circuit does not simply solve the power line reverse connection phenomenon from an interface foolproof structure, but adopts a P _ MOS field effect tube U1 through the characteristics of positive and negative electrodes, thereby fundamentally avoiding the serious result caused by the reverse connection of the positive and negative electrodes of the power line, when the positive and negative electrodes of the power line are normally connected with an interface terminal, the positive electrode of the power supply flows to the S electrode, namely a source electrode, of the P _ MOS field effect tube U1 through F1, while the negative electrode of the power supply, namely a ground end, is connected to the G electrode, namely a grid electrode, of the P _ MOS field effect tube U1 through a resistor R3, and as the P _ MOS field effect tube U1 is a P _ MOS field effect tube, the low level is conducted, and; when the positive electrode and the negative electrode of a power supply are reversely connected with the interface terminal, the S electrode of the P _ MOS field effect transistor U1 is connected with the negative electrode of the power supply through the fuse, the G electrode is connected with the positive electrode of the power supply through the R3, and the U1 is the P _ MOS field effect transistor, so that the high level is cut off, and a power supply loop of the power supply is cut off.
The P _ MOS field effect transistor U1 has the device type selection requirement that high-power and low-Rds resistance parameter devices are selected according to the system power supply condition, wherein the resistor R1 and the capacitor C1 are counter electromotive force discharge circuits generated by frequent switching of the field effect transistor and can play a role of protecting the field effect transistor, the resistor R4 and the LED are power indicator lamps and play a role of power indication, and the filter capacitor C8 and the filter capacitor C2 are rear-stage power output filter capacitors and can play a role of filtering.
When the power supply starting voltage needs to be detected, the circuit adopts a hysteresis comparator consisting of two comparators to detect whether the voltage of the front-stage power supply accords with the power supply range of the system power supply or not so as to start the output voltage of the rear-stage power supply and drive the load, by setting the turn-on voltage value at RP2, the reference voltage of the comparator is stabilized by a resistor R6 and a diode D5, when the previous stage input power voltage > the turn-on voltage, pin 1 of the first comparator U3A, outputs a high level, the capacitor C6 is charged, the high level is added to the base of the transistor Q2 through the resistor R5 and the diode D7, meanwhile, pin 7 of the second comparator U3B outputs a high level, which is applied to the base stage of the transistor Q2 through the diode D6 and the resistor R8, the transistor Q2 is turned on to pull the load output enable signal OUT _ EN low, the U1 fet is turned on at a low level, and the rear stage power supply voltage is normally turned on to drive the load.
When the power supply undervoltage detection is required: the circuit adopts a hysteresis comparator consisting of two comparators to detect whether the voltage of a front-stage power supply accords with the power supply range of a system power supply or not to start the output voltage of a rear-stage power supply and drive a load, an under-voltage protection value is set through RP1, the reference voltage of the comparator is formed by stabilizing through a resistor R6 and a diode D5, when the voltage of the front-stage input power supply is smaller than the under-voltage protection value, a pin 1 of a first comparator U3A outputs a low level, the low level is added to a base level of a triode Q2 through a resistor R5 and a diode D7, meanwhile, a pin 7 of a second comparator U3B outputs a low level, the low level is added to the base level of a triode Q2 through a diode D6, a resistor R8 is stopped at a low level of the triode Q2, a load output enable signal OUT _ EN is pulled up to a high level through R2, a U1 field effect transistor is stopped at a high level.
The hysteresis working principle of the power supply is analyzed as follows: the circuit adopts a hysteresis comparator consisting of 2 comparators to detect whether the voltage of a front-stage power supply is in a range of the set voltage of the hysteresis comparator, namely when the undervoltage < the rear-stage input voltage < the starting voltage, the hysteresis comparator can trigger the output voltage of the rear-stage power supply and drive a load. Under-voltage protection value and turn-on voltage value are set by RP1 and RP2, reference voltage of the comparators is stabilized by a resistor R6 and a diode D5, when voltage at the beginning of power-up of a front-stage power supply is greater than turn-on voltage, pin 1 of a first comparator U3A outputs high level, a capacitor C6 is charged, the high level is added to a base stage of a triode Q2 through a resistor R5 and a diode D7, meanwhile pin 7 of U3 outputs high level, the high level is added to the base stage of a triode Q2 through D6 and R8, a triode Q2 is conducted to pull down a load output enable signal OUT _ EN, a U1 field effect tube is conducted at low level, a rear-stage power supply voltage is normally conducted to drive a load, during the period, due to unstable external power supply, a rear-stage input voltage becomes low, namely, the under-voltage is less than the turn-on voltage, pin 7 of a second comparator U3 outputs B at low level, and a diode D6 plays a role of isolating level, the level of the base level of the triode Q2 is prevented from being pulled down, the 1 st pin of the first comparator U3A outputs high level, the large capacitor of the capacitor C6 is charged, the high level of the diode D4 is transmitted to the base level of the triode Q3 through the resistor R5, the load voltage output enable signal OUT _ EN is pulled down, the U1 is conducted to supply power to the load, and the hysteresis working principle of the circuit is realized.
Wherein, to the analysis of the overvoltage voltage detection theory of operation of power: the circuit adopts a voltage stabilizing diode and a triode to detect whether the input voltage of the front stage is too high or not so as to cut off the output voltage power supply loop of the rear stage power supply. The front-stage input voltage is divided by a potentiometer, then the voltage is stabilized by a diode, the triode is triggered to be conducted, the base-stage conduction voltage of the triode Q2 is pulled down, the triode Q2 is cut off, the load voltage output enable signal OUT _ EN is changed to be high, U1 is cut off, a rear-stage power supply output voltage power supply loop is cut off, and an overvoltage value is set by PR3 and the diode D1 according to the application requirements of the system, so that calculation and device type selection are carried OUT.
In the drawings, the positional relationship is described for illustrative purposes only and is not to be construed as limiting the present patent; it should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (9)
1. A back-stage direct-current power supply circuit comprises a PTC self-recovery fuse, an MOS field effect transistor and a load, and is characterized by also comprising a voltage detection module;
the source electrode of the MOS field effect transistor is connected to the anode of the power supply through a PTC self-recovery fuse;
the grid electrode of the MOS field effect transistor is connected with the negative electrode of the power supply;
one end of the voltage detection module is connected with a drain electrode of the MOS field effect transistor, and the other end of the voltage detection module is connected with a source electrode of the MOS field effect transistor;
the load is arranged on the source electrode of the MOS field effect transistor.
2. The rear-stage DC power supply circuit of claim 1, wherein the voltage detection module comprises a first comparator, a second comparator, a diode D5, a resistor R6, a first potentiometer RP1, a second potentiometer RP2, a third potentiometer RP3 and a triode Q2;
the first pin of the first comparator and the seventh pin of the second comparator are respectively connected to the base of the triode Q2;
the diode D5 and the resistor R6 are connected in series and then are respectively connected with the second pin of the first comparator and the sixth pin of the second comparator;
the third pin of the first comparator is connected with a first potentiometer RP1, and the fifth pin of the second comparator is connected with a second potentiometer RP 2;
and the collector electrode of the triode Q2 is respectively connected with the drain electrode and the source electrode of the MOS field effect transistor, and the emitter electrode is connected with the third potentiometer RP 3.
3. The rear-stage direct-current power supply circuit according to claim 2, further comprising a resistor R5, a resistor R8, a diode D6, and a diode D7;
a first pin of the first comparator is connected with the base electrode of a triode Q2 after passing through a resistor R5 and a diode D7 in sequence;
and the seventh pin of the second comparator is connected with the base of the triode Q2 after passing through the diode D6 and the resistor R8 in sequence.
4. The post-stage DC power supply circuit of claim 3, wherein a capacitor C6 is disposed between the first pin of the first comparator and the resistor R5.
5. The post-stage DC power supply circuit of claim 1, further comprising a filter capacitor C2 and a filter capacitor C8 connected in parallel, wherein the load is connected to the drain of the MOS FET through the filter capacitor C2 and the filter capacitor C8 connected in parallel.
6. The post-stage DC power supply circuit of claim 1, further comprising a resistor R1 and a capacitor C1 connected in series, wherein the source of the MOS FET is connected to the drain of the MOS FET sequentially through the resistor R1 and the capacitor C1.
7. The post-stage DC power supply circuit of claim 1, further comprising an LED lamp and a resistor R4 connected in series, wherein the source of the MOS FET is connected to the gate of the MOS FET sequentially through the resistor R4 and the LED lamp.
8. The post-stage DC power supply circuit of claim 1, further comprising a resistor R3, wherein the gate of the MOS FET is connected to the negative terminal of the power supply through a resistor R3.
9. The post-stage dc power supply circuit according to any one of claims 1 to 8, wherein the MOS fet is a P _ MOS fet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110361299.3A CN113078616A (en) | 2021-04-02 | 2021-04-02 | Rear-stage direct-current power supply circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110361299.3A CN113078616A (en) | 2021-04-02 | 2021-04-02 | Rear-stage direct-current power supply circuit |
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| CN113078616A true CN113078616A (en) | 2021-07-06 |
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| CN202110361299.3A Pending CN113078616A (en) | 2021-04-02 | 2021-04-02 | Rear-stage direct-current power supply circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114123110A (en) * | 2021-10-25 | 2022-03-01 | 广东汇芯半导体有限公司 | Semiconductor circuit having a plurality of transistors |
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| US6331764B1 (en) * | 1998-01-31 | 2001-12-18 | Motorola, Inc. | Supplemental battery overcharge protection device |
| CN105305797A (en) * | 2015-10-15 | 2016-02-03 | 中国兵器工业集团第二一四研究所苏州研发中心 | Overvoltage and undervoltage protection circuit for output of DC/DC power supply |
| CN206211500U (en) * | 2016-10-31 | 2017-05-31 | 江苏科华智能控制设备有限公司 | A kind of power protection design of hardware and software of anti-output short-circuit |
| CN206379715U (en) * | 2016-12-26 | 2017-08-04 | 杭州之山智控技术有限公司 | The anti-reverse improvement circuit of DC supply input |
| JP2018033207A (en) * | 2016-08-23 | 2018-03-01 | 株式会社村田製作所 | DC voltage supply circuit |
| CN207530518U (en) * | 2017-12-18 | 2018-06-22 | 太仓市同维电子有限公司 | Over-pressed short-circuit protection circuit |
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2021
- 2021-04-02 CN CN202110361299.3A patent/CN113078616A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331764B1 (en) * | 1998-01-31 | 2001-12-18 | Motorola, Inc. | Supplemental battery overcharge protection device |
| CN105305797A (en) * | 2015-10-15 | 2016-02-03 | 中国兵器工业集团第二一四研究所苏州研发中心 | Overvoltage and undervoltage protection circuit for output of DC/DC power supply |
| JP2018033207A (en) * | 2016-08-23 | 2018-03-01 | 株式会社村田製作所 | DC voltage supply circuit |
| CN206211500U (en) * | 2016-10-31 | 2017-05-31 | 江苏科华智能控制设备有限公司 | A kind of power protection design of hardware and software of anti-output short-circuit |
| CN206379715U (en) * | 2016-12-26 | 2017-08-04 | 杭州之山智控技术有限公司 | The anti-reverse improvement circuit of DC supply input |
| CN207530518U (en) * | 2017-12-18 | 2018-06-22 | 太仓市同维电子有限公司 | Over-pressed short-circuit protection circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114123110A (en) * | 2021-10-25 | 2022-03-01 | 广东汇芯半导体有限公司 | Semiconductor circuit having a plurality of transistors |
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