CN113078207A - AlN/GaN heterojunction on polycrystalline diamond substrate and preparation method - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 76
- 239000010432 diamond Substances 0.000 title claims abstract description 69
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 230000017525 heat dissipation Effects 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000006911 nucleation Effects 0.000 claims abstract description 4
- 238000010899 nucleation Methods 0.000 claims abstract description 4
- 230000002708 enhancing effect Effects 0.000 claims abstract description 3
- 238000001035 drying Methods 0.000 claims description 19
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 7
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The invention discloses an AlN/GaN heterojunction on a polycrystalline diamond substrate and a preparation method thereof, and mainly solves the problems of complex process, poor heat dissipation capability and high cost of the conventional GaN-based microwave power device. It includes from bottom to top: a substrate (1), a GaN epitaxial layer (4), and an AlN epitaxial layer (5). The substrate is made of polycrystalline diamond material and is used for enhancing the heat dissipation capacity of the heterojunction and improving the working performance of the device under high power; an h-BN layer (2) and a magnetron sputtering AlN layer (3) are additionally arranged between the substrate (1) and the GaN epitaxial layer (4) and are used for providing nucleation sites for the epitaxial growth of GaN and improving the crystal quality of the epitaxial layer. The invention improves the heat dissipation capability of the AlN/GaN heterojunction, reduces the production cost, and improves the service life and the stability of the device, thereby laying a foundation for the device to work under high power and being used for manufacturing high-frequency and high-power microwave power devices.
Description
Technical Field
The invention belongs to the technical field of micro-electronics, and particularly relates to an AlN/GaN heterojunction on a polycrystalline diamond substrate, which can be applied to the preparation of high-frequency and high-power GaN-based microwave power devices.
Technical Field
In recent years, the design and process of GaN-based microwave power devices are continuously improved, and the theoretical output power of the devices is higher and higher, the frequency is higher and higher, and the volume is smaller and smaller. However, under the conditions of miniaturization and power increase, the reliability and stability of GaN-based microwave power devices are seriously challenged, and the main reason is that the heat accumulation effect of the active region of the chip of the GaN-based microwave power device is rapidly increased along with the increase of the power density, so that various performance indexes of the GaN-based microwave power device are rapidly deteriorated, and the advantage of high power of the GaN-based microwave power device is not fully exerted. Therefore, the heat dissipation problem becomes one of the main problems that restrict the further development and wide application of GaN-based power devices. The traditional GaN-based power device mainly grows on substrate materials such as Si, sapphire, SiC and the like, the thermal conductivity of the materials is low, and heat generated by the device cannot be dissipated in time, so that the junction temperature of the device is increased, the output power density is reduced, and the stability of the device is reduced. The thermal conductivities of Si, SiC and diamond are respectively 150, 390 and 1200-2000 W.m-1·K-1Diamond is the substrate material with the highest thermal conductivity in nature at present, and is expected to achieve nearly perfect heat dissipation in a "high heat" device, so that extensive attention and research is paid. As a substrate material, diamond may be deposited in the GaN channel in the size of hundreds of nanometers, enabling efficient heat dissipation during operation of the transistor deviceAnd a GaN-based power device having a greater power density can be manufactured at the same size.
In recent years, many researches on the bonding of diamond and GaN have been carried out, mainly including a low-temperature bonding technology, a substrate transfer technology of directly growing diamond on the back surface of a GaN epitaxial layer, a single-crystal diamond epitaxial GaN technology and a high-thermal-conductivity diamond passivation layer heat dissipation technology. The low-temperature bonding technology has the advantages of low preparation temperature and controllable heat-conducting property of the diamond substrate, but the large-size diamond substrate has poor high-precision processing and interface bonding strength. The diamond directly grown on the back of the GaN epitaxial layer has good interface bonding strength, but involves technical difficulties such as high temperature, large wafer stress, high interface thermal resistance and the like. The single crystal diamond epitaxial GaN technology and the high thermal conductivity diamond passivation layer heat dissipation technology are respectively limited by the small size, high cost and incompatible processes of the single crystal diamond.
In summary, the prior art has the problems of complex process flow, poor interface bonding strength, high interface thermal resistance, incompatible process, high cost and the like, so that the development and large-scale application of the GaN-based microwave power device with high heat dissipation capacity are limited.
Disclosure of Invention
The invention aims to provide an AlN/GaN heterojunction on a polycrystalline diamond substrate and a preparation method thereof aiming at the defects of the prior art, so as to enhance the heat dissipation capability of the heterojunction and reduce the cost, thereby improving the working performance of a device under high power.
In order to achieve the purpose, the technical scheme of the invention is as follows:
1. an AlN/GaN heterostructure on a polycrystalline diamond substrate, comprising from bottom to top: substrate, GaN epitaxial layer and AlN epitaxial layer, its characterized in that:
the substrate is made of polycrystalline diamond material and is used for enhancing the heat dissipation capacity of the heterojunction and improving the working performance of the device under high power;
a magnetron sputtering AlN layer and an h-BN layer are sequentially arranged between the GaN epitaxial layer and the substrate and are used for providing nucleation sites for the epitaxial growth of GaN and improving the crystal quality of the GaN epitaxial layer.
Furthermore, the thickness of the h-BN layer (2) is 50-150nm, and the thickness of the magnetron sputtering AlN layer (3) is 20-50 nm.
Furthermore, the thickness of the GaN epitaxial layer (4) is 200-300nm, and the thickness of the AlN epitaxial layer (5) is 150-200 nm.
2. A method for preparing an AlN/GaN heterojunction on a polycrystalline diamond substrate, comprising the steps of:
1) cleaning and drying the substrate:
1a) putting the diamond substrate into a container containing acetone solution, and putting the container into an ultrasonic cleaning tank for cleaning for 30-35 min;
1b) taking out the cleaned diamond substrate and putting the diamond substrate into a drying box to be dried at the temperature of 65-70 ℃;
1c) putting the dried diamond substrate into a dilute hydrochloric acid solution to be soaked for 45-50 s;
1d) taking out the soaked diamond substrate, putting the diamond substrate into a drying box, and drying again at the temperature of 120-130 ℃;
2) manufacturing an h-BN layer:
transferring the h-BN film with the thickness of 50-150nm to a diamond substrate, putting the diamond substrate into a drying box, and baking the diamond substrate for 1-1.5 hours at the temperature of 120-170 ℃ to finish the preparation of the h-BN layer;
3) manufacturing a magnetron sputtering AlN layer:
taking out the dried sample, placing the sample on a magnetron sputtering platform, and growing AlN with the thickness of 20-50nm on the surface of the h-BN layer by adopting a standard magnetron sputtering process to finish the preparation of the magnetron sputtering AlN layer;
4) manufacturing an AlN/GaN heterojunction:
4a) placing the sample subjected to the AlN magnetron sputtering in a MOCVD equipment cavity, and growing a GaN epitaxial layer with the thickness of 200 and 300nm by adopting an MOCVD process;
4b) and growing an AlN epitaxial layer with the thickness of 150-200nm on the GaN epitaxial layer by adopting an MOCVD process to finish the manufacture of the AlN/GaN heterojunction.
Compared with the prior art, the invention has the following advantages:
1. according to the invention, diamond is used as a substrate material, so that the interface thermal resistance between the substrate and the GaN is reduced, the heat dissipation capability of the device is enhanced, and the service life of the device is prolonged.
2. Compared with an expensive single crystal diamond substrate, the polycrystalline diamond substrate adopted by the invention greatly reduces the production cost.
3. The invention solves the problem of difficult combination between the diamond substrate and the GaN due to the introduction of the h-BN layer and the magnetron sputtering AlN layer, improves the crystal quality of the epitaxial layer and enhances the reliability of the device.
Drawings
FIG. 1 is a view of the structure of an AlN/GaN heterojunction on a polycrystalline diamond substrate of the present invention;
FIG. 2 is a schematic flow diagram of the present invention for fabricating an AlN/GaN heterojunction on a polycrystalline diamond substrate.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
Referring to fig. 1, the AlN/GaN heterojunction of the present invention includes: a substrate 1, a GaN epitaxial layer 4 and an AlN epitaxial layer 5. The substrate 1 adopts polycrystalline diamond material to enhance the heat dissipation capability of the heterojunction and improve the working performance of the device under high power; an h-BN layer 2 and a magnetron sputtering AlN layer 3 are arranged between the substrate 1 and the GaN epitaxial layer 4 and are used for providing nucleation sites for the epitaxial growth of GaN and improving the crystal quality of the GaN epitaxial layer, the magnetron sputtering AlN layer 3 is positioned on the h-BN layer 2, the thickness of the h-BN layer 2 is 50-150nm, and the thickness of the magnetron sputtering AlN layer 3 is 20-50 nm; the thickness of the GaN epitaxial layer 4 is 200-300nm, and the GaN epitaxial layer 4 is positioned on the magnetron sputtering AlN layer 3; the AlN epitaxial layer 5 has a thickness of 150-200nm and is located on the GaN epitaxial layer 4.
Referring to fig. 2, three examples of making AlN/GaN heterojunctions on polycrystalline diamond substrates are presented.
Example 1 an AlN/GaN heterojunction was prepared on a polycrystalline diamond substrate with an h-BN layer thickness of 50nm, a magnetron sputtered AlN layer thickness of 30nm, a GaN epitaxial layer thickness of 200nm, and an AlN epitaxial layer thickness of 150 nm.
Step one, cleaning and drying the substrate, as shown in fig. 2 (a).
1a) Putting the polycrystalline diamond substrate into a container containing an acetone solution, and putting the container into an ultrasonic cleaning tank for cleaning for 30 min;
1b) taking out the cleaned diamond substrate and putting the diamond substrate into a drying box to be dried at the temperature of 65 ℃;
1c) soaking the dried diamond substrate in a dilute hydrochloric acid solution for 45 s;
1d) and taking out the soaked diamond substrate, putting the diamond substrate into a drying box, and drying again at the temperature of 120 ℃.
And step two, manufacturing an h-BN layer as shown in figure 2 (b).
And transferring the h-BN film with the thickness of 50nm onto a polycrystalline diamond substrate, putting the polycrystalline diamond substrate into a drying box, and baking the polycrystalline diamond substrate at the temperature of 150 ℃ for 1 hour to finish the preparation of the h-BN layer.
And step three, manufacturing a magnetron sputtering AlN layer as shown in the figure 2 (c).
And taking out the dried sample, placing the sample on a magnetron sputtering platform, setting the reaction temperature to be 370 ℃, the reaction pressure to be 2.0Pa, the sputtering power to be 300W, and growing an AlN layer of 30nm on the h-BN layer by adopting a magnetron sputtering process by taking aluminum nitride as a target and nitrogen as sputtering gas to finish the preparation of the magnetron sputtering AlN layer.
Step four, manufacturing an AlN/GaN heterojunction:
4a) placing the sample subjected to the AlN magnetron sputtering in a cavity of MOCVD equipment, setting the temperature of a reaction chamber to be 1000 ℃, the pressure of the reaction chamber to be 20Torr, simultaneously introducing two gases of ammonia gas with the flow of 2500sccm and a gallium source with the flow of 50sccm into the reaction chamber, and growing a GaN epitaxial layer with the thickness of 200nm as shown in figure 2 (d);
4b) the temperature of the reaction chamber was set at 900 ℃ and the pressure of the reaction chamber was set at 100Torr, and two gases, ammonia gas at a flow rate of 5000sccm and aluminum source at a flow rate of 80sccm, were simultaneously introduced into the reaction chamber to grow an AlN epitaxial layer having a thickness of 150nm, thereby completing the production of an AlN/GaN heterojunction, as shown in FIG. 2 (e).
Example 2 an AlN/GaN heterojunction was prepared on a polycrystalline diamond substrate with an h-BN layer thickness of 100nm, a magnetron sputtered AlN layer thickness of 40nm, a GaN epitaxial layer thickness of 250nm, and an AlN epitaxial layer thickness of 170 nm.
Step 1, cleaning and drying the substrate, as shown in fig. 2 (a).
The specific implementation of this step is the same as the first step of example 1;
and 2, manufacturing an h-BN layer as shown in a figure 2 (b).
And transferring the h-BN film with the thickness of 100nm onto a polycrystalline diamond substrate, putting the polycrystalline diamond substrate into a drying box, and baking the polycrystalline diamond substrate at the temperature of 170 ℃ for 1.2 hours to finish the preparation of the h-BN layer.
And 3, manufacturing a magnetron sputtering AlN layer as shown in a figure 2 (c).
And taking out the dried sample and placing the sample on a magnetron sputtering platform, wherein the reaction temperature is 380 ℃, the reaction pressure is 2.0Pa, and the sputtering power is 400W. And growing an AlN layer of 40nm on the h-BN layer by using the aluminum nitride as a target and nitrogen as sputtering gas through a magnetron sputtering process to finish the preparation of the magnetron sputtering AlN layer.
And 4, manufacturing an AlN/GaN heterojunction:
4.1) placing the sample subjected to the AlN magnetron sputtering in a cavity of MOCVD equipment, setting the temperature of a reaction chamber to be 1050 ℃, setting the pressure of the reaction chamber to be 25Torr, simultaneously introducing two gases, namely ammonia gas with the flow of 2600sccm and a gallium source with the flow of 70sccm into the reaction chamber, and growing a GaN epitaxial layer with the thickness of 250nm, as shown in figure 2 (d);
4.2) setting the reaction chamber temperature at 1060 ℃, the reaction chamber pressure at 100Torr, simultaneously introducing two gases, ammonia gas with the flow rate of 5000sccm and aluminum source with the flow rate of 85sccm into the reaction chamber, and growing an AlN epitaxial layer with the thickness of 170nm to complete the manufacture of the AlN/GaN heterojunction, as shown in FIG. 2 (e).
Example 3 an AlN/GaN heterojunction was prepared on a polycrystalline diamond substrate with an h-BN layer thickness of 150nm, a magnetron sputtered AlN layer thickness of 50nm, a GaN epitaxial layer thickness of 300nm, and an AlN epitaxial layer thickness of 200 nm.
And step A, cleaning and drying the substrate.
The specific implementation of this step is the same as the first step of example 1.
And step B, manufacturing an h-BN layer as shown in the figure 2 (B).
And transferring the h-BN film with the thickness of 150nm onto a polycrystalline diamond substrate, putting the polycrystalline diamond substrate into a drying box, and baking the polycrystalline diamond substrate at the temperature of 200 ℃ for 1.5 hours to finish the preparation of the h-BN layer.
And step C, manufacturing a magnetron sputtering AlN layer as shown in the figure 2 (C).
And taking out the dried sample and placing the sample on a magnetron sputtering platform, wherein the reaction temperature is set to be 400 ℃, the reaction pressure is set to be 2.0Pa, and the sputtering power is set to be 350W. And growing a 50nm AlN layer on the h-BN layer by using the aluminum nitride as a target and nitrogen as sputtering gas through a magnetron sputtering process to finish the preparation of the magnetron sputtering AlN layer.
And D, manufacturing the AlN/GaN heterojunction.
D1) Placing the sample subjected to the AlN magnetron sputtering in a cavity of MOCVD equipment, setting the temperature of a reaction chamber to be 1050 ℃, the pressure of the reaction chamber to be 30Torr, simultaneously introducing two gases of ammonia gas with the flow of 2500sccm and a gallium source with the flow of 90sccm into the reaction chamber, and growing a GaN epitaxial layer with the thickness of 300nm as shown in figure 2 (d);
D2) setting the temperature of the reaction chamber at 1100 deg.C and the pressure of the reaction chamber at 100Torr, introducing two gases, ammonia gas with a flow rate of 5000sccm and aluminum source with a flow rate of 100sccm, into the reaction chamber at the same time, and growing an AlN epitaxial layer with a thickness of 200nm to complete the production of an AlN/GaN heterojunction, as shown in FIG. 2 (e).
The foregoing description is only three specific examples of the present invention and should not be construed as limiting the invention in any way, and it will be apparent to those skilled in the art that various modifications and variations in form and detail can be made without departing from the principle and structure of the invention, but these modifications and variations will still fall within the scope of the appended claims.
Claims (7)
1. An AlN/GaN heterojunction on a polycrystalline diamond substrate comprising, from bottom to top: substrate (1), GaN epitaxial layer (4) and AlN epitaxial layer (5), characterized in that:
the substrate (1) is made of polycrystalline diamond materials and is used for enhancing the heat dissipation capacity of the heterojunction and improving the working performance of the device under high power;
a magnetron sputtering AlN layer (3) and an h-BN layer (2) are sequentially arranged between the GaN epitaxial layer (4) and the substrate (1) and are used for providing nucleation sites for the epitaxial growth of GaN and improving the crystal quality of the GaN epitaxial layer.
2. A heterojunction as claimed in claim 1, wherein:
the thickness of the h-BN layer (2) is 50-150nm,
the thickness of the magnetron sputtering AlN layer (3) is 20-50 nm.
3. A heterojunction as claimed in claim 1, wherein:
the thickness of the GaN epitaxial layer (4) is 200-300nm,
the AlN epitaxial layer (5) has a thickness of 150-200 nm.
4. A method for preparing an AlN/GaN heterojunction on a polycrystalline diamond substrate, comprising the steps of:
1) cleaning and drying the substrate:
1a) putting the diamond substrate into a container containing acetone solution, and putting the container into an ultrasonic cleaning tank for cleaning for 30-35 min;
1b) taking out the cleaned diamond substrate and putting the diamond substrate into a drying box to be dried at the temperature of 65-70 ℃;
1c) putting the dried diamond substrate into a dilute hydrochloric acid solution to be soaked for 45-50 s;
1d) taking out the soaked diamond substrate, putting the diamond substrate into a drying box, and drying again at the temperature of 120-130 ℃;
2) manufacturing an h-BN layer:
transferring the h-BN film with the thickness of 50-150nm to a diamond substrate, putting the diamond substrate into a drying box, and baking the diamond substrate for 1-1.5 hours at the temperature of 120-170 ℃ to finish the preparation of the h-BN layer;
3) manufacturing a magnetron sputtering AlN layer:
taking out the dried sample, placing the sample on a magnetron sputtering platform, and growing AlN with the thickness of 20-50nm on the surface of the h-BN layer by adopting a standard magnetron sputtering process to finish the preparation of the magnetron sputtering AlN layer;
4) manufacturing an AlN/GaN heterojunction:
4a) placing the sample subjected to the AlN magnetron sputtering in a MOCVD equipment cavity, and growing a GaN epitaxial layer with the thickness of 200 and 300nm by adopting an MOCVD process;
4b) and growing an AlN epitaxial layer with the thickness of 150-200nm on the GaN epitaxial layer by adopting an MOCVD process to finish the manufacture of the AlN/GaN heterojunction.
5. The method of claim 4, wherein: 3) the standard magnetron sputtering process adopted in the method is used for growing the AlN layer, and the process conditions are as follows:
the reaction temperature is 350-400 ℃,
the reaction pressure was 2.0Pa,
the sputtering power is 300-500W,
the target material is aluminum nitride, and the sputtering gas is nitrogen.
6. The method of claim 4, wherein: 4a) the method adopts MOCVD growth process to grow the GaN epitaxial layer with the thickness of 200-300nm, and the process conditions are as follows:
the temperature of the reaction chamber is 1000-1080 ℃,
the pressure in the reaction chamber is kept at 20-50Torr,
and introducing 2500-3000sccm ammonia gas into the reaction chamber at the same time, wherein the flow rate of the gallium source is 50-100 sccm.
7. The method of claim 4, wherein: 4b) in the method, an AlN epitaxial layer with the thickness of 150-200nm is grown on a GaN epitaxial layer by adopting an MOCVD process, and the process conditions are as follows:
the temperature of the reaction chamber is 1000-1100 ℃,
the pressure in the reaction chamber is kept at 20-60Torr,
and simultaneously introducing ammonia gas with the flow rate of 5000sccm and an aluminum source with the flow rate of 80-100sccm into the reaction chamber.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20060243982A1 (en) * | 2005-04-27 | 2006-11-02 | Kinik Company | Diamond substrate and method for fabricating the same |
| CN105861987A (en) * | 2016-05-19 | 2016-08-17 | 西安电子科技大学 | Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride |
| CN110690105A (en) * | 2019-10-22 | 2020-01-14 | 西安电子科技大学 | Method for growing gallium nitride on diamond substrate based on hexagonal boron nitride and aluminum nitride |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20060243982A1 (en) * | 2005-04-27 | 2006-11-02 | Kinik Company | Diamond substrate and method for fabricating the same |
| CN105861987A (en) * | 2016-05-19 | 2016-08-17 | 西安电子科技大学 | Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride |
| CN110690105A (en) * | 2019-10-22 | 2020-01-14 | 西安电子科技大学 | Method for growing gallium nitride on diamond substrate based on hexagonal boron nitride and aluminum nitride |
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