CN113078180B - Display panel and display device - Google Patents

Display panel and display device Download PDF

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Publication number
CN113078180B
CN113078180B CN202110628623.3A CN202110628623A CN113078180B CN 113078180 B CN113078180 B CN 113078180B CN 202110628623 A CN202110628623 A CN 202110628623A CN 113078180 B CN113078180 B CN 113078180B
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layer
light
reflective
emitting device
light emitting
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CN113078180A (en
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胡道兵
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Suzhou China Star Optoelectronics Technology Co Ltd
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Suzhou China Star Optoelectronics Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/856Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention provides a display panel and a display device; the display panel reduces the color mixing effect between adjacent heterochromatic light-emitting devices by arranging the light shielding layer in the interval area of the light-emitting devices, adds the reflecting layer between the light shielding layer and the light-emitting devices, avoids the light-emitting devices from directly emitting to the light shielding layer to generate scattering through the reflection action, further reduces the color mixing effect between the heterochromatic light-emitting devices, avoids the large-angle light rays emitted by the light-emitting devices from being absorbed by the light shielding layer, improves the light-emitting efficiency of the light rays emitted by the light-emitting devices, improves the reflection efficiency of the reflecting layer by arranging the reflecting layer on the reflecting surface of the light-emitting devices in the light-emitting direction, ensures that the wavelength of the reflection peak of each reflecting layer corresponds to the light-emitting wavelength of each light-emitting device by enabling the reflecting layer to be composed of at least three reflecting sublayers with the refractive indexes which are sequentially stacked and alternate with each other, and optimizing the display effect.

Description

Display panel and display device
Technical Field
The application relates to the technical field of display, in particular to a display panel and a display device.
Background
With the increasing demand of high-level display market for image quality, the improvement of display image quality becomes a new demand for high-level display. Currently, the Organic Light-Emitting Diode (OLED) display technology commonly used for high-level display is limited by the problems of compensation circuit, oxide semiconductor backplane technology and driving design, and further development is needed. The Micro-light emitting diode (Micro-LED) display technology is a brand new display technology, has greater advantages in brightness and power consumption than the OLED display technology and the double-layer liquid crystal display technology, and has become a popular development direction in the current display field.
However, the Micro-LED display technology still has many problems to be solved, and firstly, based on the requirement of high-level display, the size of the Micro-LED chip needs to be smaller, and the distance between the Micro-LED chips also needs to be smaller, so that light mixing occurs between the adjacent red, green and blue LED chips, and the display effect is poor.
Disclosure of Invention
The invention provides a display panel and a display device, which can solve the problem of poor display quality caused by light mixing of adjacent pixels and low light emitting efficiency of a light emitting device.
To solve the above problem, in a first aspect, the present invention provides a display panel comprising:
a substrate;
the light-emitting device layer is arranged on the substrate and comprises a plurality of light-emitting devices which are spaced from each other and arranged in an array;
the light shielding layer is arranged on the substrate and correspondingly arranged in the interval areas of the plurality of light-emitting devices; and
a reflective layer disposed between the light-shielding layer and the light-emitting device;
the reflective layer comprises at least three reflective sublayers which are sequentially stacked along the direction far away from the side wall of the light shielding layer, the refractive indexes of the at least three reflective sublayers are alternately distributed, the reflective layer is positioned on the surface of the side wall of the light shielding layer, the light emitting device comprises a first light emitting device, a second light emitting device and a third light emitting device, the reflective layer comprises a first reflective layer, a second reflective layer and a third reflective layer, the first reflective layer is arranged on the side wall of the light shielding layer opposite to the first light emitting device, the wavelength of the reflectivity peak of the first reflective layer corresponds to the light emitting wavelength of the first light emitting device, the second reflective layer is arranged on the side wall of the light shielding layer opposite to the second light emitting device, and the wavelength of the reflectivity peak of the second reflective layer corresponds to the light emitting wavelength of the second light emitting device, the third reflecting layer is arranged on the side wall of the shading layer opposite to the third light-emitting device, and the wavelength of the reflectivity peak of the third reflecting layer corresponds to the light-emitting wavelength of the third light-emitting device.
In the display panel provided in the embodiment of the present invention, the reflective sub-layer is a transparent film layer, and the reflective layer is formed by alternately stacking amorphous silicon layers and silicon oxide layers, or by alternately stacking silicon oxide layers and silicon nitride layers.
In the display panel provided in the embodiment of the present invention, the reflective layer includes a first amorphous silicon film layer, a silicon oxide film layer and a second amorphous silicon film layer, the thickness of the first amorphous silicon film layer is 23nm, the thickness of the silicon oxide film layer is 117nm, and the thickness of the second amorphous silicon film layer is 19 nm.
In the display panel provided in the embodiment of the present invention, in at least three reflective sublayers, a refractive index of the reflective sublayer of the bottom layer is greater than a refractive index of the light shielding layer and a refractive index of the reflective sublayer of the sub-bottom layer, or a refractive index of the reflective sublayer of the bottom layer is smaller than a refractive index of the light shielding layer and a refractive index of the reflective sublayer of the sub-bottom layer.
In the display panel provided in the embodiment of the present invention, the refractive index of the reflective sub-layer of the bottom layer ranges from 1.7 to 2.0, and the refractive index of the reflective sub-layer of the sub-bottom layer ranges from 1.4 to 1.7.
In the display panel provided in the embodiment of the present invention, an included angle formed between the sidewall of the light-shielding layer and the surface of the substrate on which the light-emitting device layer is disposed is greater than or equal to 45 degrees and less than or equal to 70 degrees.
In the display panel provided in the embodiment of the present invention, the reflective layer is a metal layer, and a height of the reflective layer is smaller than a height of the light emitting device layer.
In the display panel provided in the embodiment of the present invention, the reflective layer and the adjacent light emitting device are spaced from each other.
In an embodiment of the invention, a material of the light-shielding layer includes a black ink material.
In a second aspect, the present invention provides a display device, which includes a backlight module and the display panel, where the backlight module is connected to the display panel and is configured to provide a backlight source for the display panel.
Has the advantages that: the invention provides a display panel and a display device, wherein the display panel comprises a substrate, a light-emitting device layer, a shading layer and a reflecting layer, wherein the light-emitting device layer is arranged on the substrate and comprises a plurality of light-emitting devices which are arranged at intervals in an array manner; the shading layer is arranged on the substrate and correspondingly arranged in the interval areas of the plurality of light-emitting devices; the reflecting layer is arranged between the shading layer and the light-emitting device, wherein the reflecting layer comprises at least three reflecting sublayers which are sequentially stacked along the direction far away from the side wall of the shading layer, the refractive indexes of the at least three reflecting sublayers are alternately distributed, the reflecting layer is positioned on the surface of the side wall of the shading layer, the light-emitting device comprises a first light-emitting device, a second light-emitting device and a third light-emitting device, the reflecting layer comprises a first reflecting layer, a second reflecting layer and a third reflecting layer, the first reflecting layer is arranged on the side wall of the shading layer opposite to the first light-emitting device, the wavelength of the reflectivity peak of the first reflecting layer corresponds to the light-emitting wavelength of the first light-emitting device, the second reflecting layer is arranged on the side wall of the shading layer opposite to the second light-emitting device, the wavelength of the reflectivity peak of the second reflecting layer corresponds to the light-emitting wavelength of the second light-emitting device, and the third reflecting layer is arranged on the side wall of the shading layer opposite to the third light-emitting device, the wavelength at the peak of the reflectivity of the third reflective layer corresponds to the light emitting wavelength of the third light emitting device. In the display panel, firstly, a light shielding layer is arranged in an interval area of the light emitting device to reduce the color mixing effect between the adjacent different color light emitting devices, secondly, a reflection layer is additionally arranged between the light shielding layer and the light emitting device, on one hand, the light emitting device is prevented from directly emitting to the light shielding layer to generate scattering through reflection action, the color mixing effect between the different color light emitting devices is further reduced, on the other hand, the light rays with large angles emitted by the light emitting device are also prevented from being absorbed by the light shielding layer, so that the light emitting efficiency of the light rays emitted by the light emitting device is improved, the display brightness is improved, the power consumption of the display panel is reduced, in addition, the reflection layer is arranged on the reflection surface of the light emitting direction of the light emitting device to improve the reflection efficiency of the reflection layer, and the reflection layer is composed of at least three reflection sublayers with the refractive indexes which are sequentially stacked and alternate with each other, the wavelength of the reflectivity peak of the first reflecting layer corresponds to the light emitting wavelength of the first light emitting device, the wavelength of the reflectivity peak of the second reflecting layer corresponds to the light emitting wavelength of the second light emitting device, the third reflecting layer is arranged on the side wall of the shading layer opposite to the third light emitting device, the wavelength of the reflectivity peak of the third reflecting layer corresponds to the light emitting wavelength of the third light emitting device, the wavelength of the reflectivity peak of each reflecting layer corresponds to the light emitting wavelength of each light emitting device, light emitted by the corresponding light emitting device can be selectively reflected, and the display effect is optimized.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a reflective layer (r) in a display panel according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a reflective layer in a display panel according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a reflective layer (c) in a display panel according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating a reflectivity test result of a reflective layer (i) in a display panel according to an embodiment of the present invention;
FIG. 6 is a diagram illustrating a reflectivity test result of a reflective layer of a display panel according to an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating a reflectivity test result of a reflective layer (c) in a display panel according to an embodiment of the present invention;
fig. 8 is a schematic cross-sectional structure diagram of another display panel according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
An embodiment of the present invention provides a display panel, which will be described in detail below with reference to a cross-sectional structure of the display panel shown in fig. 1.
Specifically, the display panel includes a substrate 110, a light emitting device layer 120, a light shielding layer 130, and a reflective layer 140.
Wherein the light emitting device layer 120 is disposed on the substrate 110 and includes a plurality of light emitting devices 121 (only 3 are exemplarily shown) spaced from each other and arranged in an array; the light shielding layer 130 is disposed on the substrate 110 and corresponds to the spacing regions of the light emitting devices 121; the reflective layer 140 is disposed between the light-shielding layer 130 and the light-emitting device 121.
In the display panel provided in this embodiment, the light-shielding layer 130 is disposed at an interval region between the light-emitting devices 121 to reduce a color mixing effect between the adjacent different-color light-emitting devices 121, and then the reflective layer 140 is additionally disposed between the light-shielding layer 130 and the light-emitting devices 121, so that the light-emitting devices 121 are prevented from being directly emitted to the light-shielding layer 130 to be scattered by a reflection effect, and the color mixing effect between the different-color light-emitting devices 121 is further reduced, and on the other hand, large-angle light emitted by the light-emitting devices 121 is prevented from being absorbed by the light-shielding layer 130, so that the light-emitting efficiency of light emitted by the light-emitting devices 121 is improved, the display brightness is improved, and the power consumption.
Further, the substrate 110 is generally an array substrate, that is, includes a plurality of thin film transistors arranged in an array on a substrate, each thin film transistor is electrically connected to a light emitting device on an upper layer, and is configured to independently control a working state of each light emitting device, so as to display a required picture, the thin film transistor includes a gate, an active layer, a source drain electrode, and a corresponding insulating layer, further, according to an actual process requirement, the active layer may be made of different semiconductor materials, so as to form different types of array substrates, and for example, the array substrate may be selected from an amorphous silicon type array substrate, an oxide semiconductor type array substrate, a low temperature polysilicon type array substrate, or a low temperature polysilicon-oxide semiconductor type array substrate.
The light emitting device layer 120 includes red, green and blue light emitting devices or red, green, blue and white light emitting devices, and is arranged in a certain manner, wherein the light emitting device 121 may be selected from light emitting devices commonly used in the art, and exemplarily, the light emitting device 121 is an OLED light emitting device, a Micro LED light emitting device, a quantum dot light emitting device, or the like.
Specifically, when the light emitting device 121 is an OLED light emitting device, in an actual manufacturing process, the light emitting device 121 generally includes, from bottom to top, an anode layer formed by a physical vapor deposition process and a patterning process, and a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer, and a cathode layer formed by an evaporation process.
When the light emitting device 121 is a Micro LED light emitting device, the light emitting device 121 is a Micro LED chip transferred and bound to the array substrate by a bulk transfer technique.
When the light emitting device 121 is a quantum dot light emitting device, the structure thereof is similar to that of the aforementioned OLED light emitting device, except that the organic light emitting layer in the OLED light emitting device is replaced with a corresponding quantum dot light emitting layer.
The light-shielding layer 130 is usually made of black organic material, such as black ink material commonly used in the art, and can be formed at a corresponding position on the substrate 110 by coating and exposing or ink-jet printing.
In some embodiments, with reference to fig. 1, the reflective layer 140 may be disposed on a sidewall of the light-shielding layer 130 opposite to the light-emitting device 121, so that the reflective layer 140 forms a reflective surface opposite to the light-emitting direction of the light-emitting device 121, thereby improving the reflective efficiency of the reflective layer 140.
Further, the angle between the side wall of the light shielding layer 130 and the surface of the substrate 110 on which the light emitting device layer 120 is disposed may be adjusted, so as to adjust the angle of the reflective surface of the reflective layer 140, specifically, an included angle θ formed between the side wall of the light shielding layer 130 and the surface of the substrate 110 on which the light emitting device layer 120 is disposed is set within a certain range, on one hand, when the included angle θ is too large, that is, the side wall of the light shielding layer 130 is too steep, the reflective layer 140 on the upper layer is deposited on the side wall of the light shielding layer 130, the phenomenon of the upper layer being thin at the top and the lower layer is likely to occur, so that the uniformity of the film thickness of the reflective layer 140 is poor, and the reflective performance of the reflective layer is affected, therefore, the included angle θ is required to be less than or equal to 70 degrees; on the other hand, when the included angle θ is too small, that is, the sidewall of the light shielding layer 130 is too gentle, the light emitted from the light emitting device 121 cannot be reflected, so that light mixing is caused, and therefore, the included angle θ needs to be greater than or equal to 45 degrees.
In some embodiments, the reflective layer 140 may be a metal layer, and is typically made of a metal material with high reflectivity, such as silver or aluminum, which is commonly used in the art.
However, when silver or aluminum is used as the reflective layer 140 in the above embodiments, although a high reflectivity can be obtained, some disadvantages may be caused in an actual manufacturing process. In particular, when silver is used as the reflective layer 140, since the price of silver is expensive, the manufacturing cost of the display panel is greatly increased; when aluminum is used as the reflective layer 140, hillock-shaped protrusions are generated due to the aluminum film layer being susceptible to the extrusion stress, resulting in poor film quality.
Therefore, in order to avoid the above drawbacks, in some embodiments, the reflective layer 140 is formed by at least three reflective sub-layers with mutually alternate refractive indexes, which are sequentially stacked along a direction away from the sidewall of the light-shielding layer 130, and the reflective sub-layers are transparent film layers, that is, the reflective sub-layers are formed by alternately stacking a high refractive index transparent reflective sub-layer and a low refractive index transparent reflective sub-layer, so as to form a distributed bragg reflective film.
Here, specific refractive index of the high refractive index transparent reflective sublayer and the low refractive index transparent reflective sublayer are not particularly limited, and the larger the refractive index difference between the two layers is, the more advantageous to construct a reflective layer with higher reflectivity is, in an optional common film layer in the art, the refractive index of the high refractive index transparent reflective sublayer may be set to 1.7-2.0, and the refractive index of the low refractive index transparent reflective sublayer may be set to 1.4-1.7.
Further, the reflective sub-layer is selected from transparent film layers commonly used in the art, for example, the reflective sub-layer can be selected from a silicon oxide film layer, a silicon nitride film layer, an amorphous silicon film layer, and the like, and the desired reflective layer is formed by combining the reflective sub-layers in a matching relationship of refractive indexes of the reflective sub-layers.
Specifically, the reflective layer may be formed by alternately stacking amorphous silicon film layers and silicon oxide film layers, or by overlapping silicon oxide film layers and silicon nitride film layers.
The reflecting layer formed by alternately stacking the transparent reflecting sublayers with high refractive index and the transparent reflecting sublayers with low refractive index is generally formed by chemical vapor deposition and yellow light etching patterning processes, the process is mature, the cost is low, and the formed film has stable property and is not easy to cause defects, so that the method is suitable for large-scale industrial production.
Three specific structures of the reflective layer are exemplarily given as follows, and further explanation is made:
a reflective layer (i): the amorphous silicon film layer is 23 nm/the silicon oxide film layer is 117 nm/the amorphous silicon film layer is 19nm, and the specific structure is shown in figure 2;
a reflective layer (II): the specific structure of the silicon oxide film layer is 74 nm/silicon nitride film layer 60 nm/silicon oxide film layer 74 nm/silicon nitride film layer 60nm/, which is shown in figure 3;
reflecting layer (c): the specific structure of the silicon oxide film layer 74 nm/the silicon nitride film layer 60 nm/the silicon oxide film layer 74 nm/the silicon nitride film layer 60nm is shown in fig. 4.
The three reflective layers are respectively formed on the glass substrate, and the reflectivity is tested in an atmospheric environment by means of optical Simulation (Simulation) and experimental measurement (Experiment), wherein the test result of the reflective layer (i) refers to fig. 5, the test result of the reflective layer (ii) refers to fig. 6, and the test result of the reflective layer (iii) refers to fig. 7.
From the test results, the peak reflectivity values of the three reflective layers can reach more than 70%, so as to meet the requirement of light reflection of the light-emitting device.
In some embodiments, since the reflectivity peak value of the distributed bragg reflector and the wavelength corresponding to the reflectivity peak value depend on the refractive index and the thickness of the high-refractive-index film layer and the low-refractive-index film layer, respectively, a film layer with a suitable refractive index may be selected and a certain thickness may be set to obtain a reflector with a desired reflectivity at the corresponding wavelength.
Specifically, referring to the schematic cross-sectional structure of another display panel shown in fig. 8, the light emitting device 121 includes a first light emitting device 1211, a second light emitting device 1212, and a third light emitting device 1213, the reflective layer 140 includes a first reflective layer 141, a second reflective layer 142, and a third reflective layer 143, wherein the first reflective layer 141 is disposed on a sidewall of the light shielding layer 130 opposite to the first light emitting device 1211, a wavelength of a reflectivity peak of the first reflective layer 141 corresponds to an emission wavelength of the first light emitting device 1211, the second reflective layer 142 is disposed on a sidewall of the light shielding layer 130 opposite to the second light emitting device 1212, a wavelength of a reflectivity peak of the second reflective layer 142 corresponds to an emission wavelength of the second light emitting device 1212, and the third reflective layer 143 is disposed on a sidewall of the light shielding layer 130 opposite to the third light emitting device 1213, the wavelength at the peak of the reflectance of the third reflective layer 143 corresponds to the light emission wavelength of the third light emitting device 1213.
The first light emitting device 1211, the second light emitting device 1212, and the third light emitting device 1213 may be a red light emitting device, a green light emitting device, and a blue light emitting device, respectively, and the wavelength range of the red light is about 625-700nm, the wavelength range of the green light is about 520-560nm, and the wavelength range of the blue light is about 450-520nm, so that the wavelengths corresponding to the reflectivity peaks of the first reflective layer 141, the second reflective layer 142, and the third reflective layer 143 may be adjusted to the wavelengths of the light emitted by the corresponding light emitting devices through the film structure, so as to selectively reflect the light emitted by the corresponding light emitting devices, thereby optimizing the display effect.
Furthermore, the light emitting luminances of the light emitting devices of different light colors are also inevitably different, and the reflectivity peaks of the first reflective layer 141, the second reflective layer 142 and the third reflective layer 143 may also be designed to have a desired size through the film structure, that is, the reflectivity peak of the reflective layer corresponding to the light emitting device with low light emitting luminance is high, and the reflectivity peak of the reflective layer corresponding to the light emitting device with high light emitting luminance is low, so as to balance the actual display luminance of the light emitting device of each light color, and further optimize the display effect.
In some embodiments, in at least three of the reflective sublayers, the refractive index of the bottom reflective sublayer is greater than the refractive index of the light shielding layer 130 and the refractive index of the sub-bottom reflective sublayer, or the refractive index of the bottom reflective sublayer is less than the refractive index of the light shielding layer 130 and the refractive index of the sub-bottom reflective sublayer, so that the light shielding layer 130, the bottom reflective sublayer and the sub-bottom reflective sublayer also form a structure with alternating high and low refractive indexes, that is, the light shielding layer 130 is used as a new reflective sublayer of the lower layer of the reflective layer, and the reflectivity of the reflective layer is further improved on the premise that the thickness of the reflective layer is not increased.
It can be understood that, in this embodiment, the bottom reflective sublayer is a high refractive index reflective sublayer or a low refractive index reflective sublayer, and depending on the magnitude relationship between the refractive indexes of the high refractive index film layer and the low refractive index film layer selected from the light shielding layer and the reflective layer, the light shielding layer 130/the bottom reflective sublayer/the bottom sub-bottom reflective sublayer may satisfy the refractive index magnitude alternation.
In addition, it should be explained that, in this embodiment, the reflective sub-layer of the bottom layer refers to the bottom layer close to the side wall direction of the light-shielding layer, that is, a reflective sub-layer farthest from the corresponding light-emitting device, and correspondingly, the reflective sub-layer of the top layer is a fixed layer away from the side wall direction of the light-shielding layer, that is, a reflective sub-layer closest to the corresponding light-emitting device.
In some embodiments, the refractive index of the reflective sub-layer of the top layer is greater than the refractive index of the reflective sub-layer of the second top layer, i.e., by providing a high refractive index reflective sub-layer on the top layer, the reflectivity of the reflective layer is further improved.
In some embodiments, please refer to fig. 1, the height of the reflective layer 140 is smaller than the height of the light emitting device layer 120, and this design considers that the higher the height of the reflective layer 140 is, the more the light emitted by the light emitting device 121 is reflected and emitted, so as to reduce the light emitting angle of the light emitting device 121, thereby aggravating the color shift phenomenon of the display panel at a large angle, and therefore, in consideration that the light emitted by the light emitting device reflected by the reflective layer inevitably causes a certain degree of color shift while improving the light emitting efficiency, the height of the reflective layer 140 is designed to be smaller than the height of the light emitting device layer 120 for balancing the advantages and disadvantages.
In some embodiments, referring to fig. 1, the reflective layer 140 and the adjacent light emitting device 121 are spaced apart from each other, where, in an actual manufacturing process, the light emitting device 121 inevitably deviates to a certain extent due to the limitation of process precision, and then, a spacing region is disposed between the reflective layer 140 and the adjacent light emitting device 121, so that the reflective layer 140 and the adjacent light emitting device 121 are prevented from interfering with each other due to process deviation, thereby causing poor display.
It should be noted that, in the above display panel embodiment, only the above structure is described, and it is understood that, in addition to the above structure, the display panel according to the embodiment of the present invention may further include any other necessary structure as needed, and the specific structure is not limited herein.
In another embodiment of the present invention, a display device is further provided, where the display device includes a backlight module and the display panel provided in the above embodiment, and the backlight module is connected to the display panel and is configured to provide a backlight source for the display panel.
Specifically, the display device may be installed in various electronic products having a display function, for example, the electronic products may be a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, an electronic book reader, and the like.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed descriptions of other embodiments, and are not described herein again.
The display panel and the display device provided by the embodiment of the present invention are described in detail above, and the principle and the embodiment of the present invention are explained herein by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims (10)

1. A display panel, comprising:
a substrate;
the light-emitting device layer is arranged on the substrate and comprises a plurality of light-emitting devices which are spaced from each other and arranged in an array;
the light shielding layer is arranged on the substrate and correspondingly arranged in the interval areas of the plurality of light-emitting devices; and
a reflective layer disposed between the light-shielding layer and the light-emitting device;
the reflective layer comprises at least three reflective sublayers which are sequentially stacked along the direction far away from the side wall of the light shielding layer, the refractive indexes of the at least three reflective sublayers are alternately distributed, the reflective layer is positioned on the surface of the side wall of the light shielding layer, the light emitting device comprises a first light emitting device, a second light emitting device and a third light emitting device, the reflective layer comprises a first reflective layer, a second reflective layer and a third reflective layer, the first reflective layer is arranged on the side wall of the light shielding layer opposite to the first light emitting device, the wavelength of the reflectivity peak of the first reflective layer corresponds to the light emitting wavelength of the first light emitting device, the second reflective layer is arranged on the side wall of the light shielding layer opposite to the second light emitting device, and the wavelength of the reflectivity peak of the second reflective layer corresponds to the light emitting wavelength of the second light emitting device, the third reflecting layer is arranged on the side wall of the shading layer opposite to the third light-emitting device, and the wavelength of the reflectivity peak of the third reflecting layer corresponds to the light-emitting wavelength of the third light-emitting device.
2. The display panel of claim 1, wherein the reflective sub-layer is a transparent film layer, and the reflective layer is formed by alternately stacking amorphous silicon layers and silicon oxide layers, or alternately stacking silicon oxide layers and silicon nitride layers.
3. The display panel according to claim 2, wherein the reflective layer comprises a first amorphous silicon film layer, a silicon oxide film layer, and a second amorphous silicon film layer, the first amorphous silicon film layer has a thickness of 23nm, the silicon oxide film layer has a thickness of 117nm, and the second amorphous silicon film layer has a thickness of 19 nm.
4. The display panel according to claim 1, wherein, of the at least three reflective sublayers, a refractive index of the reflective sublayer of the bottom layer is greater than a refractive index of the light-shielding layer and a refractive index of the reflective sublayer of the sub-bottom layer, or a refractive index of the reflective sublayer of the bottom layer is less than a refractive index of the light-shielding layer and a refractive index of the reflective sublayer of the sub-bottom layer.
5. The display panel of claim 4, wherein the reflective sub-layer of the sub-layer has a refractive index in a range of 1.7 to 2.0, and the reflective sub-layer of the sub-layer has a refractive index in a range of 1.4 to 1.7.
6. The display panel according to claim 1, wherein an included angle formed between a side wall of the light shielding layer and a surface of the substrate on which the light emitting device layer is disposed is greater than or equal to 45 degrees and less than or equal to 70 degrees.
7. The display panel of claim 1, wherein a height of the reflective layer is less than a height of the light emitting device layer.
8. The display panel of claim 1, wherein the reflective layer is spaced apart from adjacent ones of the light emitting devices.
9. The display panel according to claim 1, wherein a material of the light shielding layer includes a black ink material.
10. A display device, comprising a backlight module and the display panel as claimed in any one of claims 1 to 9, wherein the backlight module is connected to the display panel for providing a backlight source for the display panel.
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CN113571663B (en) * 2021-07-22 2023-07-28 京东方科技集团股份有限公司 Display panel, preparation method thereof and display device
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CN114156306B (en) * 2021-11-30 2023-07-25 深圳市华星光电半导体显示技术有限公司 Display panel manufacturing method, display panel and display device
CN114141809B (en) * 2021-11-30 2023-07-25 深圳市华星光电半导体显示技术有限公司 Preparation method of display panel and display panel
CN114488603A (en) * 2022-02-21 2022-05-13 深圳市华星光电半导体显示技术有限公司 Quantum dot color film substrate, preparation method thereof and display panel

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111710690A (en) * 2020-06-04 2020-09-25 深圳市华星光电半导体显示技术有限公司 LED display based on quantum dots and preparation method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103915482B (en) * 2014-03-27 2017-03-01 京东方科技集团股份有限公司 A kind of organic EL display panel, its manufacture method and display device
TWI596748B (en) * 2016-08-15 2017-08-21 財團法人工業技術研究院 Display device
CN107731873B (en) * 2017-10-12 2020-01-31 深圳市华星光电半导体显示技术有限公司 Color film substrate and manufacturing method thereof and OLED display device
CN108428722B (en) * 2018-03-20 2020-08-04 京东方科技集团股份有限公司 Organic light-emitting display panel and manufacturing method thereof
CN109244220A (en) * 2018-08-30 2019-01-18 上海九山电子科技有限公司 A kind of LED luminescent panel and preparation method thereof, LED display
CN112185990A (en) * 2020-10-23 2021-01-05 江苏第三代半导体研究院有限公司 Naked eye 3D display unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111710690A (en) * 2020-06-04 2020-09-25 深圳市华星光电半导体显示技术有限公司 LED display based on quantum dots and preparation method thereof

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