CN113078045B - Manufacturing method of ultra-large upper electrode for 14nm dry etching equipment - Google Patents
Manufacturing method of ultra-large upper electrode for 14nm dry etching equipment Download PDFInfo
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- CN113078045B CN113078045B CN202110321477.XA CN202110321477A CN113078045B CN 113078045 B CN113078045 B CN 113078045B CN 202110321477 A CN202110321477 A CN 202110321477A CN 113078045 B CN113078045 B CN 113078045B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The invention discloses a manufacturing method of an ultra-large upper electrode for 14nm dry etching equipment, wherein the upper electrode is provided with an upper surface and a lower surface which are oppositely arranged, and the upper surface comprises a circular concave surface, an annular first inclined surface, an annular step, an annular second inclined surface, an annular top surface and an annular third inclined surface which are sequentially connected from inside to outside and are concentric; the circular concave surface is provided with a plurality of first vent holes which are uniformly distributed on a plurality of circumferences taking the center of the circular concave surface as the center of a circle; a plurality of second ventilation holes are uniformly distributed in a specific area of the annular top surface; the manufacturing method comprises the steps of cutting, flat grinding, primary contour machining, punching, hole milling, etching, grinding, upper surface contour machining, primary polishing, lower surface contour machining, secondary polishing and the like. The invention overcomes the technical difficulty and designs a set of production process capable of producing the ultra-large upper electrode for the 14nm dry etching equipment which meets the industrial requirements.
Description
Technical Field
The invention relates to the technical field of upper electrodes, in particular to a manufacturing method of an ultra-large upper electrode for 14nm dry etching equipment.
Background
In semiconductor dry etching equipment, an upper electrode is used in various equipment, materials such as silicon, carbon, quartz and the like are generally used, and the main function of the equipment is to control the range and uniformity of plasma so that the etching rates of the middle and the edge of a silicon wafer are the same. The upper electrode is generally internally provided with a plurality of vent holes which are uniformly distributed on a plurality of circumferences taking the center of the upper electrode as the circle center, the vent holes are uniformly distributed on one diameter of the upper electrode, gas enters from the gas inlet pipe and is redistributed and guided through the vent holes of the upper electrode, the gas forms plasma in the high vacuum process cavity by adding a radio frequency power supply, and the plasma etches a silicon wafer adsorbed on the lower electrode to form a required pattern.
At present, the demand of an upper electrode of 14nm dry etching equipment for semiconductor dry etching is increased day by day in China, the upper electrode belongs to an ultra-large electrode, the diameter of the upper electrode reaches 400-450mm, the production process difficulty of the upper electrode is greatly improved compared with the upper electrode of a common etching machine, and the manufacturing technology of the ultra-large upper electrode for the 14nm dry etching equipment is blank in China at present. Therefore, it is necessary to research and develop a process for manufacturing an ultra-large upper electrode for a 14nm dry etching apparatus.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides the manufacturing method of the ultra-large upper electrode for the 14nm dry etching equipment, which can produce the ultra-large upper electrode for the 14nm dry etching equipment meeting the industrial requirements and fills the industrial blank.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a manufacturing method of an ultra-large upper electrode for 14nm dry etching equipment, wherein the upper electrode is integrally disc-shaped and is provided with an upper surface and a lower surface which are oppositely arranged, the upper surface comprises a circular concave surface, an annular first inclined surface, an annular step, an annular second inclined surface, an annular top surface and an annular third inclined surface which are sequentially connected from inside to outside and are concentric, the included angle between the circular concave surface and the annular first inclined surface and the included angle between the annular step and the annular second inclined surface are obtuse angles, and the included angle between the annular top surface and the annular third inclined surface is a reflex angle;
the circular concave surface is provided with a plurality of first vent holes, and the first vent holes are uniformly distributed on a plurality of circumferences taking the center of the circular concave surface as the center of a circle; a plurality of second ventilation holes are uniformly distributed in a specific area of the annular top surface;
the manufacturing method comprises the following steps:
s1, cutting: cutting the silicon rod into silicon wafers with preset thickness by using a cutting machine;
s2, flat grinding: carrying out flat grinding treatment on two opposite surfaces of the silicon wafer cut in the step S1 by using a flat grinding machine, and adjusting the flatness of the two surfaces;
s3, primary contour machining: processing the periphery of the silicon wafer subjected to the flat grinding in the step S2 by using a numerical control processing center to form a disc-shaped silicon wafer with the diameter being the preset diameter;
s4, punching: with the center of the disc-shaped silicon wafer machined in the step S3 as a reference, punching a first preset number of first vent holes in a preset first area of the disc-shaped silicon wafer by using a punching machine, and punching a second preset number of second vent holes in a preset second area of the disc-shaped silicon wafer, wherein the first vent holes punched in the step are blind holes, and the second vent holes are through holes;
s5, hole milling: carrying out hole milling treatment on the first vent hole of the disc-shaped silicon wafer punched in the step S4 by using a numerical control machining center, and further machining the first vent hole into a through hole;
s6, etching: etching the hole walls of the first vent hole and the second vent hole of the disc-shaped silicon wafer milled in the step S5 respectively to enable the aperture of the first vent hole and the aperture of the second vent hole and the surface state of the inner wall of the hole to meet the design requirements;
s7, grinding: grinding the two opposite circular surfaces of the disc-shaped silicon wafer etched in the step S6 by using a grinder, and adjusting the parallelism and the planeness of the two circular surfaces of the disc-shaped silicon wafer;
s8, machining the upper surface profile: machining the disc-shaped silicon wafer subjected to flat grinding in the step S7 by using a numerical control machining center, machining a circular concave surface, a circular first inclined surface, a circular step, a circular second inclined surface, a circular top surface and a circular third inclined surface which are concentric with the center of the disc-shaped silicon wafer on one circular surface of the disc-shaped silicon wafer according to a design drawing, and reserving allowance required for grinding and polishing;
s9, primary polishing: grinding the circular concave surface, the annular first inclined surface, the annular step, the annular second inclined surface and the annular third inclined surface of the disc-shaped silicon wafer processed in the step S8 by using a numerical control processing center, and then polishing the ground parts in the step to a mirror surface;
s10, machining the lower surface profile: machining the disc-shaped silicon wafer processed in the step S9 by using a numerical control center, and processing a corresponding shape on the other circular surface of the disc-shaped silicon wafer according to a design drawing;
s11, secondary polishing: and polishing the annular top surface and the other circular surface of the disc-shaped silicon wafer processed in the step S10 to a mirror surface by using a polishing machine to obtain the upper electrode, wherein one circular surface of the disc-shaped silicon wafer is the upper surface of the upper electrode, and the other circular surface of the disc-shaped silicon wafer is the lower surface of the upper electrode.
Preferably, a quartz grinding disc is adopted in the grinding process of step S9, and the grinding sand on the grinding disc is 2000# grinding sand.
Preferably, the polishing process in step S9 is performed by using a polishing solution, the rotation direction and rotation speed of the turntable are 8r/min in forward rotation and 20r/min in reverse rotation, and the concentration of the polishing solution is 1: 10.
Preferably, the numerical control machining center is a vertical machining center.
Preferably, the number of the first vent holes of the upper electrode is 849, the aperture is 0.65mm, the number of the second vent holes is 37, and the aperture is 0.68 mm.
Preferably, the drill used for drilling in step S4 is a PCD drill of 0.6mm diameter.
Preferably, the maximum thickness between the upper surface and the lower surface of the upper electrode is 12.4mm, and the preset thickness of the silicon wafer cut in step S1 is 13.5 mm.
Preferably, the cutter in step S1 is a single wire diamond wire cutter.
The invention has the beneficial effects that:
the manufacturing method of the ultra-large upper electrode for the 14nm dry etching equipment provided by the invention is used for researching and developing the process technology of the ultra-large upper electrode, overcomes the technical difficulty, designs a set of production process capable of producing the ultra-large upper electrode for the 14nm dry etching equipment meeting the industrial requirements, and fills the industrial blank.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the detailed description of the invention or the technical solutions in the prior art, the drawings that are needed in the detailed description of the invention or the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale.
FIG. 1 is a schematic diagram of the structure of the upper surface of a very large upper electrode in one embodiment of the present invention;
FIG. 2 is a sectional view A-A of FIG. 1;
FIG. 3 is a schematic view of the bottom surface of the oversized upper electrode in an embodiment of the invention;
fig. 4 is a process flow diagram of a method for fabricating an ultra-large top electrode for a 14nm dry etching apparatus in accordance with an embodiment of the present invention.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and therefore are only used as examples, and the protection scope of the present invention is not limited thereby.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the invention pertains.
In the description of the present application, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, but are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the invention.
Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate a number of the indicated technical features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
As shown in fig. 1-4, the present embodiment provides a manufacturing method of an ultra-large upper electrode for 14nm dry etching equipment, as shown in fig. 1-3, the upper electrode is integrally disc-shaped, and has an upper surface 1 and a lower surface 2 which are oppositely arranged, the upper surface 1 includes a circular concave surface 11, an annular first inclined surface 12, an annular step 13, an annular second inclined surface 14, an annular top surface 15, and an annular third inclined surface 16 which are sequentially connected from inside to outside and are concentric, an included angle between the circular concave surface 11 and the annular first inclined surface 12, and an included angle between the annular step 13 and the annular second inclined surface 14 are obtuse angles, an included angle between the annular top surface 15 and the annular third inclined surface 16 is a reflex angle, and the lower surface 2 is provided with a limiting step 3 and a circle of non-penetrating threaded mounting hole 4;
the circular concave surface 11 is provided with a plurality of first vent holes 5, and the first vent holes 5 are uniformly distributed on a plurality of circumferences with the center of the circular concave surface 11 as the center of a circle; a plurality of second ventilation holes 6 are uniformly distributed in a specific area of the annular top surface 15;
as shown in fig. 4, the manufacturing method includes the following steps:
s1, cutting: cutting the silicon rod into silicon wafers with preset thickness by using a cutting machine;
specifically, in the present embodiment, the maximum thickness between the upper surface 1 and the lower surface 2 of the upper electrode is 12.4mm, the preset thickness of the silicon wafer cut in this step is 13.5mm, and a grinding and polishing margin is reserved.
Specifically, in the present embodiment, the cutting machine of the present step is a single-wire diamond wire cutting machine.
S2, flat grinding: carrying out flat grinding treatment on two opposite surfaces of the silicon wafer cut in the step S1 by using a flat grinding machine, and adjusting the flatness of the two surfaces;
s3, machining the primary shape: processing the periphery of the silicon wafer subjected to the flat grinding in the step S2 by using a numerical control processing center to form a disc-shaped silicon wafer with the diameter being the preset diameter;
s4, punching: with the center of the disc-shaped silicon wafer machined in the step S3 as a reference, punching a first preset number of first vent holes 5 in a preset first area of the disc-shaped silicon wafer by using a punching machine, and punching a second preset number of second vent holes 6 in a preset second area of the disc-shaped silicon wafer by using the punching machine, wherein the punched first vent holes 5 are blind holes, and the second vent holes 6 are through holes;
specifically, in this embodiment, the number of the first ventilation holes 5 of the upper electrode is 849, and the aperture is 0.65mm, and the number of the second ventilation holes 6 is 37, and the aperture is 0.68 mm. The drill bit used for punching is a PCD drill bit with the diameter of 0.6 mm.
S5, hole milling: milling the first vent hole 5 of the disc-shaped silicon wafer punched in the step S4 by using a numerical control machining center, and further machining the first vent hole 5 into a through hole;
s6, etching: etching the hole walls of the first vent hole 5 and the second vent hole 6 of the disc-shaped silicon wafer milled in the step S5 respectively to enable the hole diameters of the first vent hole 5 and the second vent hole 6 and the surface states of the inner walls of the holes to meet the design requirements;
specifically, the first ventilation holes 5 and the second ventilation holes 6 are all etched to 0.65mm, then all the first ventilation holes 5 are sealed by a special adhesive tape, and all the second ventilation holes 6 at the periphery of the first ventilation holes are etched to 0.68 mm.
S7, grinding: grinding the two opposite circular surfaces of the disc-shaped silicon wafer etched in the step S6 by using a grinder, and adjusting the parallelism and the planeness of the two circular surfaces of the disc-shaped silicon wafer;
s8, contour machining of the upper surface 1: machining the disc-shaped silicon wafer subjected to flat grinding in the step S7 by using a numerical control machining center, machining a circular concave surface 11, an annular first inclined surface 12, an annular step 13, an annular second inclined surface 14, an annular top surface 15 and an annular third inclined surface 16 which are concentric with the center of the disc-shaped silicon wafer on one circular surface of the disc-shaped silicon wafer according to a design drawing, and reserving allowance required for grinding and polishing;
s9, primary polishing: grinding the circular concave surface 11, the annular first inclined surface 12, the annular step 13, the annular second inclined surface 14 and the annular third inclined surface 16 of the disc-shaped silicon wafer processed in the step S8 by using a numerical control processing center, and then polishing the ground parts in the step to a mirror surface;
specifically, in this embodiment, a quartz grinding disc is used in the grinding process in this step, and the grinding sand on the grinding disc is 2000# grinding sand; polishing by using polishing solution in the polishing process, wherein the rotation direction and the rotation speed of the rotary table are 8r/min in forward rotation and 20r/min in reverse rotation, and the concentration of the polishing solution is 1: 10. The polishing related parameters are determined by a qualitative and quantitative analysis method through repeated measurement until the product can be polished to be flawless in a mirror surface, the surface of the disc-shaped silicon wafer is scratched due to unmatched rotating speeds, and the surface of the disc-shaped silicon wafer is scratched or the surface of the disc-shaped silicon wafer is crystallized due to unmatched concentrations of polishing solutions.
S10, contour machining of the lower surface 2: machining the disc-shaped silicon wafer processed in the step S9 by using a numerical control center, and processing a corresponding shape on the other circular surface of the disc-shaped silicon wafer according to a design drawing;
s11, secondary polishing: and polishing the annular top surface 15 and the other circular surface of the disc-shaped silicon wafer processed in the step S10 to a mirror surface by using a polishing machine to obtain the upper electrode, wherein one circular surface of the disc-shaped silicon wafer is the upper surface 1 of the upper electrode, and the other circular surface of the disc-shaped silicon wafer is the lower surface 2 of the upper electrode.
Specifically, in this embodiment, the numerical control machining center is a vertical machining center.
The manufacturing method of the ultra-large upper electrode for the 14nm dry etching equipment provided by the invention is used for researching and developing the process technology of the ultra-large upper electrode, overcomes the technical difficulty, designs a set of production process capable of producing the ultra-large upper electrode for the 14nm dry etching equipment meeting the industrial requirements, and fills the industrial blank.
In the description of the present invention, numerous specific details are set forth. However, it is understood that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention, and they should be construed as being included in the following claims and description.
Claims (8)
1. The manufacturing method of the ultra-large upper electrode for the 14nm dry etching equipment is characterized in that the upper electrode is integrally disc-shaped and provided with an upper surface and a lower surface which are oppositely arranged, the upper surface comprises a circular concave surface, an annular first inclined surface, an annular step, an annular second inclined surface, an annular top surface and an annular third inclined surface which are sequentially connected from inside to outside and are concentric, an included angle between the circular concave surface and the annular first inclined surface and an included angle between the annular step and the annular second inclined surface are obtuse angles, and an included angle between the annular top surface and the annular third inclined surface is a reflex angle;
the circular concave surface is provided with a plurality of first vent holes, and the first vent holes are uniformly distributed on a plurality of circumferences taking the center of the circular concave surface as the center of a circle; a plurality of second ventilation holes are uniformly distributed in a specific area of the annular top surface;
the manufacturing method comprises the following steps:
s1, cutting: cutting the silicon rod into silicon wafers with preset thickness by using a cutting machine;
s2, flat grinding: carrying out flat grinding treatment on two opposite surfaces of the silicon wafer cut in the step S1 by using a flat grinding machine, and adjusting the flatness of the two surfaces;
s3, primary contour machining: processing the periphery of the silicon wafer subjected to the flat grinding in the step S2 by using a numerical control processing center to form a disc-shaped silicon wafer with the diameter being the preset diameter;
s4, punching: with the center of the disc-shaped silicon wafer machined in the step S3 as a reference, punching a first preset number of first vent holes in a preset first area of the disc-shaped silicon wafer by using a punching machine, and punching a second preset number of second vent holes in a preset second area of the disc-shaped silicon wafer by using the punching machine, wherein the punched first vent holes in the step are blind holes, and the second vent holes are through holes;
s5, hole milling: milling the first vent hole of the disc-shaped silicon wafer punched in the step S4 by using a numerical control machining center, and further machining the first vent hole into a through hole;
s6, etching: respectively etching the hole walls of the first vent hole and the second vent hole of the disc-shaped silicon wafer subjected to hole milling in the step S5 to enable the hole diameters of the first vent hole and the second vent hole and the surface states of the inner walls of the holes to meet design requirements;
s7, grinding: grinding the two opposite circular surfaces of the disc-shaped silicon wafer etched in the step S6 by using a grinder, and adjusting the parallelism and the planeness of the two circular surfaces of the disc-shaped silicon wafer;
s8, machining the upper surface profile: machining the disc-shaped silicon wafer subjected to flat grinding in the step S7 by using a numerical control machining center, machining a circular concave surface, a circular first inclined surface, a circular step, a circular second inclined surface, a circular top surface and a circular third inclined surface which are concentric with the center of the disc-shaped silicon wafer on one circular surface of the disc-shaped silicon wafer according to a design drawing, and reserving allowance required for grinding and polishing;
s9, primary polishing: grinding the circular concave surface, the annular first inclined surface, the annular step, the annular second inclined surface and the annular third inclined surface of the disc-shaped silicon wafer processed in the step S8 by using a numerical control processing center, and then polishing the ground parts in the step to a mirror surface;
s10, machining the lower surface profile: machining the disc-shaped silicon wafer processed in the step S9 by using a numerical control center, and processing a corresponding shape on the other circular surface of the disc-shaped silicon wafer according to a design drawing;
s11, secondary polishing: and polishing the annular top surface and the other circular surface of the disc-shaped silicon wafer processed in the step S10 to a mirror surface by using a polishing machine to obtain the upper electrode, wherein one circular surface of the disc-shaped silicon wafer is the upper surface of the upper electrode, and the other circular surface of the disc-shaped silicon wafer is the lower surface of the upper electrode.
2. The method for manufacturing an ultra-large upper electrode for a 14nm dry etching apparatus as claimed in claim 1, wherein a quartz grinding plate is used in the grinding process of step S9, and the grinding sand on the grinding plate is 2000# grinding sand.
3. The method for manufacturing an ultra-large upper electrode for a 14nm dry etching device according to claim 1, wherein polishing liquid is used for polishing in the step S9, the rotation direction and the rotation speed of the turntable are 8r/min in forward rotation and 20r/min in reverse rotation, and the concentration of the polishing liquid is 1: 10.
4. The method for manufacturing an ultra-large upper electrode for a 14nm dry etching apparatus according to claim 1, wherein the numerical control machining center is a vertical machining center.
5. The method for manufacturing an ultra-large upper electrode for a 14nm dry etching apparatus according to any one of claims 1 to 4, wherein the number of the first ventilation holes of the upper electrode is 849, the aperture of the first ventilation holes is 0.65mm, the number of the second ventilation holes of the upper electrode is 37, and the aperture of the second ventilation holes of the upper electrode is 0.68 mm.
6. The method for manufacturing an ultra-large upper electrode for a 14nm dry etching apparatus according to claim 5, wherein the drill used for drilling in step S4 is a PCD drill with a diameter of 0.6 mm.
7. The method of claim 1, wherein the maximum thickness between the upper surface and the lower surface of the upper electrode is 12.4mm, and the predetermined thickness of the silicon wafer cut in step S1 is 13.5 mm.
8. The method for manufacturing an ultra-large upper electrode for a 14nm dry etching apparatus according to claim 1, wherein the cutting machine in the step S1 is a single-wire diamond wire cutting machine.
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