CN108550537A - A kind of divergence type upper electrode of semiconductor dry ecthing equipment - Google Patents
A kind of divergence type upper electrode of semiconductor dry ecthing equipment Download PDFInfo
- Publication number
- CN108550537A CN108550537A CN201810477311.5A CN201810477311A CN108550537A CN 108550537 A CN108550537 A CN 108550537A CN 201810477311 A CN201810477311 A CN 201810477311A CN 108550537 A CN108550537 A CN 108550537A
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- China
- Prior art keywords
- holes
- hole
- ring
- upper electrode
- feed tray
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The invention discloses a kind of divergence type upper electrodes of semiconductor dry ecthing equipment, including horizontally disposed gas feed tray, gas feed tray coaxial sleeve is equipped with connection ring, gas feed tray wall coaxial is connected with No.1 spacing ring, the ring body of No.1 spacing ring offers several No.1 through-holes, connection ring inner wall is coaxially connected with No. two spacing rings, No. two spacing rings offer several No. two through-holes, No. two through-holes are corresponding with No.1 lead to the hole site, it is inserted with stifled bolt jointly in No.1 through-hole and No. two through-holes, stifled bolt upper end is connected with limited block, the lower end of stifled bolt offers No. three through-holes, the opening of No. three through-holes is equipped with limit protrusion, the both ends of No. three through-holes are equipped with movable block, spring is equipped in No. three through-holes, the one end of movable block far from spring is connected with jacking block.In the present invention, the gas feed tray in upper electrode is detachably connected with connection ring, and to facilitate the later stage to replace and repair, and installation and disassembly process are all extremely simple.
Description
Technical field
The present invention relates to dry ecthing equipment more particularly to a kind of divergence type upper electrodes of semiconductor dry ecthing equipment.
Background technology
In the electrode assemblies of dry ecthing equipment, when etch process carries out, process gas is noted by gas injection tube
Enter, and enters in the multiple gas jetting holes formed on upper electrode.
At this point, generating plasma according to the voltage on upper electrode, oxygen on the wafer is formd according to this plasma
Change the etching of film or metal film etc..
But previous electrode assemblies are integrated with top electrode gas feed tray and connection ring, so gas supplies
Entire upper electrode must be replaced when to disk or connection ring, one of them is impaired.
The especially gas feed tray of introducing technology gas compared with connection ring, not only short life and in different technology conditions
Under be more easy to be damaged.
In this case, the upper electrode of high price will be entirely replaced, will be made as long as previous gas feed tray is impaired
At the great wasting of resources.
Invention content
The purpose of the present invention is to provide a kind of divergence type upper electrodes of semiconductor dry ecthing equipment, to solve gas confession
The technical issues of to integral replacing upper electrode is needed after disk and the one of parts damages of connection ring.
The present invention using following technical scheme in order to solve the above technical problems, realized：
The present invention provides a kind of divergence type upper electrode of semiconductor dry ecthing equipment, including horizontally disposed gas feed tray,
Gas feed tray is uniformly provided with multiple gas jetting holes, and gas feed tray coaxial sleeve is equipped with connection ring, and connection ring offers multiple
Connecting hole, gas feed tray wall coaxial are connected with No.1 spacing ring, and the ring body of No.1 spacing ring offers several No.1 through-holes,
No.1 through-hole is longitudinally disposed, and connection ring inner wall is coaxially connected with No. two spacing rings, and No. two spacing rings are arranged under No.1 spacing ring
Side, No. two spacing rings offer several No. two through-holes, and No. two through-holes are corresponding with No.1 lead to the hole site, and No.1 through-hole and No. two are led to
Stifled bolt is inserted in hole jointly, stifled bolt upper end is connected with limited block, and the lower end of stifled bolt offers No. three through-holes, No. three through-hole levels
Setting, the opening of No. three through-holes are equipped with limit protrusion, and the both ends of No. three through-holes are equipped with movable block, and movable block passes through limit
Protrusion limit is equipped with spring in No. three through-holes in No. three through-holes, the both ends of spring are contacted with movable block respectively, and movable block is separate
One end of spring is connected with jacking block, and jacking block is arranged in the lower section of No. two through-holes.
Preferably, there are four No.1 through-hole and No. two through-holes are all provided with, No.1 through-hole and No. two through-holes are along place ring
Body even circumferential is arranged.
Preferably, No.1 spacing ring lower end is connected with several raised lines, raised line length direction and No.1 spacing ring diametric(al)
Unanimously, No. two spacing ring upper ends offer several grooves, and raised line is corresponding with groove location.
Preferably, raised line and groove are V-type.
Preferably, there are four raised line and groove are all provided with, raised line and groove are arranged along place ring body even circumferential.
Preferably, stifled bolt is arranged with washer, and washer is arranged between limited block and No.1 through-hole.
Preferably, the one end of jacking block far from No. two through-holes is smooth curved surface.
The present invention in use, first by No. two through-holes on the No.1 through-hole and No. two spacing rings on No.1 spacing ring
Alignment is inserted into stifled bolt, is inserted into during blocking up bolt, first presses the jacking block at No. three through-hole both ends, keeps jacking block logical into No. three
In hole, then stifled bolt is inserted into No.1 through-hole and No. two through-holes, after stifled bolt is fully inserted into, under the action of the spring,
Opening sliding of the movable block picture to No. three through-holes, to push jacking block, jacking block, that is, extended No. three through-holes, in limited block and
Under the clamping action of jacking block, No.1 spacing ring and No. two limits are fixed, if the later stage needs dismounting, only need to press
Jacking block, then extract stifled bolt.
The phase that the present invention passes through structure between No.1 spacing ring, No.1 through-hole, No. two spacing rings, No. two through-holes and stifled bolt
Mutually cooperation so that the gas feed tray in upper electrode is detached with connection ring, and stifled stud structure is special, need not employ it
His auxiliary tool can then be completed to fix, and avoid when being installed using bolt and nut, damage and install caused by upper electrode
Or it is cumbersome when dismounting.
Being uniformly arranged for No.1 through-hole and No. two through-holes, makes the present invention be more uniformly stressed, is conducive to upper electrode knot
The stabilization of structure.
During being directed at No.1 through-hole and No. two through-holes, it is only necessary to gas feed tray is rotated, to drive No.1 to limit
Position ring rotation, in rotation process, raised line can be inserted into groove, so that No.1 spacing ring is fixed with No. two spacing rings,
And then the automatic aligning of No.1 through-hole and No. two through-holes is completed, it is cumbersome when avoiding artificial alignment.
Raised line and groove, which are V-type, can then facilitate raised line to be inserted into groove so that alignment procedure is more convenient.
Washer, which is arranged, then can increase the degree of combining closely of No.1 spacing ring and No. two limits.
Jacking block is equipped with smooth curved surface and stifled bolt is then facilitated to be inserted into out of No.1 through-hole and No. two through-holes.
The beneficial effects of the invention are as follows：The present invention provides a kind of semiconductor dry ecthing equipment divergence type upper electrode,
Gas feed tray in upper electrode is to be detachably connected with connection ring, to facilitate the later stage to replace and repair, and install with
And disassembly process is all extremely simple.
Description of the drawings
Fig. 1 is the upward view of gas feed tray in the present invention.
Fig. 2 is the vertical view of connection ring in the present invention.
Fig. 3 is the side view of gas feed tray in the present invention.
Fig. 4 is the connection diagram of gas feed tray and connection ring in the present invention.
Fig. 5 is the enlarged drawing of part A in the present invention.
Reference numeral：1- gas feed trays, 2- gas jetting holes, 3- No.1 spacing rings, 4- No.1 through-holes, 5- raised lines, 6-
Connection ring, No. bis- spacing rings of 7-, No. bis- through-holes of 8-, 9- connecting holes, 10- grooves, 11- block up bolt, 12- limited blocks, and 13- tri- leads to
Hole, 14- limit protrusions, 15- movable blocks, 16- springs, 17- jacking blocks, 18- washers.
Specific implementation mode
In order to make the technical means, the creative features, the aims and the efficiencies achieved by the present invention be easy to understand, tie below
Specific embodiment is closed, the present invention is further explained, but following embodiments are only the preferred embodiment of the present invention, and not all.
Based on the implementation example in the implementation mode, those skilled in the art's obtained other realities without making creative work
Example is applied, protection scope of the present invention is belonged to.
As shown in Figs. 1-5, a kind of divergence type upper electrode of semiconductor dry ecthing equipment, including horizontally disposed gas supply
To disk 1, gas feed tray 1 is uniformly provided with multiple gas jetting holes 2, and 1 coaxial sleeve of gas feed tray is equipped with connection ring 6, connection ring 6
Multiple connecting holes 9 are offered, 1 wall coaxial of gas feed tray is connected with No.1 spacing ring 3, and the ring body of No.1 spacing ring 3 opens up
There are four No.1 through-holes 4, and No.1 through-hole 4 is longitudinally disposed, and 6 inner wall of connection ring is coaxially connected with No. two spacing rings 7, No. two spacing rings
7 are arranged below No.1 spacing ring 3, and No. two spacing rings 7 are opened up there are four No. two through-holes 8, No. two through-holes 8 and No.1 through-hole 4
Set corresponding, No.1 through-hole 4 and No. two through-holes 8 are arranged along place ring body even circumferential, No.1 through-hole 4 and No. two through-holes 8
It is inside inserted with stifled bolt 11 jointly, stifled 11 upper end of bolt is connected with limited block 12, and stifled bolt 11 is arranged with washer 18, and the setting of washer 18 is limiting
Between position block 12 and No.1 through-hole 4, the lower end of stifled bolt 11 offers No. three through-holes 13, and No. three through-holes 13 are horizontally disposed, and No. three logical
The opening in hole 13 is equipped with limit protrusion 14, and the both ends of No. three through-holes 13 are equipped with movable block 15, and movable block 15 passes through limit
14 limit of protrusion is equipped with spring 16, the both ends of spring 16 connect with movable block 15 respectively in No. three through-holes 13 in No. three through-holes 13
It touches, the one end of movable block 15 far from spring 16 is connected with jacking block 17, and jacking block 17 is arranged in the lower section of No. two through-holes 8, jacking block 17
One end far from No. two through-holes 8 is smooth curved surface；3 lower end of No.1 spacing ring is affixed, and there are four raised line 5,5 length directions of raised line
Consistent with 3 diametric(al) of No.1 spacing ring, No. two 7 upper ends of spacing ring are opened up there are four groove 10, raised line 5 and 10 position phase of groove
Corresponding, raised line 5 and groove 10 are V-type, and raised line 5 and groove 10 are arranged along place ring body even circumferential.
The present invention in use, first by No. two on the No.1 through-hole 4 and No. two spacing rings 7 on No.1 spacing ring 3
Through-hole 8 is aligned, and is inserted into stifled bolt 11, is inserted into during blocking up bolt 11, is first pressed the jacking block 17 at No. three 13 both ends of through-hole, make top
Block 17 enters in No. three through-holes 13, and then stifled bolt 11 is inserted into No.1 through-hole 4 and No. two through-holes 8, when stifled bolt 11 is complete
After insertion, under the action of the spring 16, movable block 15 is as the opening sliding to No. three through-holes 13, to push jacking block 17, top
Block 17 is extended No. three through-holes 13, under the clamping action of limited block 12 and jacking block 17, No.1 spacing ring 3 and No. two limits
Position 7 is fixed, only need to be by coping block 17 if the later stage needs dismounting, then extracts stifled bolt 11.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
For personnel it should be appreciated that the present invention is not limited to the above embodiments, described in the above embodiment and specification is only the present invention
Preference, be not intended to limit the present invention, without departing from the spirit and scope of the present invention, the present invention also has various
Changes and improvements, these changes and improvements all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by institute
Attached claims and its equivalent thereof.
Claims (7)
1. a kind of divergence type upper electrode of semiconductor dry ecthing equipment, including horizontally disposed gas feed tray（1）, the gas
Body feed tray（1）It is uniformly provided with multiple gas jetting holes（2）, the gas feed tray（1）Coaxial sleeve is equipped with connection ring（6）, institute
State connection ring（6）Offer multiple connecting holes（9）, which is characterized in that the gas feed tray（1）Wall coaxial is connected with No.1
Spacing ring（3）, the No.1 spacing ring（3）Ring body offer several No.1 through-holes（4）, the No.1 through-hole（4）Longitudinal direction is set
It sets, the connection ring（6）Inner wall is coaxially connected with No. two spacing rings（7）, No. two spacing rings（7）Setting is limited in the No.1
Position ring（3）Lower section, No. two spacing rings（7）Offer several No. two through-holes（8）, No. two through-holes（8）With the No.1
Through-hole（4）Position is corresponding, the No.1 through-hole（4）With No. two through-holes（8）It is inside inserted with stifled bolt jointly（11）, described stifled
Bolt（11）Upper end is connected with limited block（12）, the stifled bolt（11）Lower end offer No. three through-holes（13）, No. three through-holes
（13）It is horizontally disposed, No. three through-holes（13）Opening be equipped with limit protrusion（14）, No. three through-holes（13）Two
End is equipped with movable block（15）, the movable block（15）Pass through the limit protrusion（14）Limit is in No. three through-holes（13）
It is interior, No. three through-holes（13）It is interior to be equipped with spring（16）, the spring（16）Both ends respectively with the movable block（15）Contact,
The movable block（15）Far from the spring（16）One end be connected with jacking block（17）, the jacking block（17）It is arranged described two
Number through-hole（8）Lower section.
2. a kind of divergence type upper electrode of semiconductor dry ecthing equipment according to claim 1, which is characterized in that described
No.1 through-hole（4）And No. two through-holes（8）There are four being all provided with, the No.1 through-hole（4）And No. two through-holes（8）
It is arranged along place ring body even circumferential.
3. a kind of divergence type upper electrode of semiconductor dry ecthing equipment according to claim 1, which is characterized in that described
No.1 spacing ring（3）Lower end is connected with several raised lines（5）, the raised line（5）Length direction and the No.1 spacing ring（3）Diameter
Direction is consistent, No. two spacing rings（7）Upper end offers several grooves（10）, the raised line（5）With the groove（10）Phase
Matching.
4. a kind of divergence type upper electrode of semiconductor dry ecthing equipment according to claim 3, which is characterized in that described
Raised line（5）And the groove（10）It is V-type.
5. a kind of divergence type upper electrode of semiconductor dry ecthing equipment according to claim 4, which is characterized in that described
Raised line（5）And the groove（10）There are four being all provided with, the raised line（5）And the groove（10）Along place ring body circumference
It is uniformly arranged.
6. a kind of divergence type upper electrode of semiconductor dry ecthing equipment according to claim 1, which is characterized in that described
Stifled bolt（11）It is arranged with washer（18）, the washer（18）It is arranged in the limited block（12）With the No.1 through-hole（4）Between.
7. a kind of divergence type upper electrode of semiconductor dry ecthing equipment according to claim 1, which is characterized in that described
Jacking block（17）Far from No. two through-holes（8）One end be smooth curved surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810477311.5A CN108550537A (en) | 2018-05-18 | 2018-05-18 | A kind of divergence type upper electrode of semiconductor dry ecthing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810477311.5A CN108550537A (en) | 2018-05-18 | 2018-05-18 | A kind of divergence type upper electrode of semiconductor dry ecthing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108550537A true CN108550537A (en) | 2018-09-18 |
Family
ID=63495134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810477311.5A Withdrawn CN108550537A (en) | 2018-05-18 | 2018-05-18 | A kind of divergence type upper electrode of semiconductor dry ecthing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108550537A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078045A (en) * | 2021-03-25 | 2021-07-06 | 重庆臻宝实业有限公司 | Manufacturing method of ultra-large upper electrode for 14nm dry etching equipment |
-
2018
- 2018-05-18 CN CN201810477311.5A patent/CN108550537A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078045A (en) * | 2021-03-25 | 2021-07-06 | 重庆臻宝实业有限公司 | Manufacturing method of ultra-large upper electrode for 14nm dry etching equipment |
| CN113078045B (en) * | 2021-03-25 | 2022-06-21 | 重庆臻宝实业有限公司 | Manufacturing method of ultra-large upper electrode for 14nm dry etching equipment |
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| PB01 | Publication | ||
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180918 |
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| WW01 | Invention patent application withdrawn after publication |