CN113076713B - S parameter extraction method and system of radio frequency microwave probe, storage medium and terminal - Google Patents

S parameter extraction method and system of radio frequency microwave probe, storage medium and terminal Download PDF

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CN113076713B
CN113076713B CN202110628906.8A CN202110628906A CN113076713B CN 113076713 B CN113076713 B CN 113076713B CN 202110628906 A CN202110628906 A CN 202110628906A CN 113076713 B CN113076713 B CN 113076713B
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parameter
simulation
radio frequency
microwave probe
value
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CN113076713A (en
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丁旭
王立平
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Zhejiang Chengchang Technology Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
    • G01R35/02—Testing or calibrating of apparatus covered by the other groups of this subclass of auxiliary devices, e.g. of instrument transformers according to prescribed transformation ratio, phase angle, or wattage rating

Abstract

The invention provides a method and a system for extracting S parameter of a radio frequency microwave probe, a storage medium and a terminal, comprising the following steps: obtaining simulated values of open-circuit, short-circuit and load-matched reflection coefficients and straight-through transmission coefficients of the on-chip calibration piece obtained by three-dimensional electromagnetic field simulation; acquiring measured values of open-circuit, short-circuit and load-matched reflection coefficients and straight-through transmission coefficients of the on-chip calibration piece obtained by calibrating double-port S parameters; calculating an error value between the simulated value and the measured value; if the error value is larger than the preset threshold value, acquiring a simulation value acquired after the simulation parameter is reset until the error value is not larger than the preset threshold value; fitting the simulation value to obtain circuit model parameters of the on-chip calibration piece; and acquiring the S parameter of the radio frequency microwave probe based on the circuit model parameter and the OSL algorithm. The method and the system for extracting the S parameter of the radio frequency microwave probe, the storage medium and the terminal can realize the accurate extraction of the S parameter, and effectively improve the on-chip test precision of the radio frequency microwave.

Description

S parameter extraction method and system of radio frequency microwave probe, storage medium and terminal
Technical Field
The invention relates to the technical field of radio frequency microwave probes, in particular to a method and a system for extracting S parameters of a radio frequency microwave probe, a storage medium and a terminal.
Background
When the radio frequency microwave probe is used as a radio frequency microwave chip on-chip test, the performance of the most direct transition connecting device for connecting the tested device and the test system directly influences the whole test result. The accuracy of the radio frequency microwave probe circuit model and the behavior model parameter plays a crucial role in the quality of the test result. Therefore, it is necessary to develop a method capable of accurately obtaining the S-parameters of the rf microwave probe circuit model and the two-port behavior model, and also necessary to develop a method capable of accurately verifying the accuracy of the S-parameters, which is helpful for S-parameter optimization and design iteration.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a method and a system for extracting S-parameters of a radio frequency microwave probe, a storage medium, and a terminal, which are capable of implementing accurate extraction of S-parameters based on a three-dimensional electromagnetic simulation and self-calibration algorithm, and are fast and convenient, thereby effectively improving the accuracy of on-chip testing of radio frequency microwaves.
In order to achieve the above and other related objects, the present invention provides an S-parameter extraction method for a radio frequency microwave probe, comprising the steps of: acquiring a simulation value of open-circuit, short-circuit and load-matched reflection coefficients and straight-through transmission coefficients of an on-chip calibration piece, which are obtained by performing three-dimensional electromagnetic field simulation on a three-dimensional electromagnetic field simulation system based on a radio frequency microwave probe and a pre-set parameter and a simulation parameter of the on-chip calibration piece; acquiring measured values of open-circuit, short-circuit and load-matched reflection coefficients and straight-through transmission coefficients of the on-chip calibration piece, which are obtained by calibrating a double-port S parameter by a test system based on the simulation parameter; calculating an error value between the simulated value and the measured value; if the error value is greater than a preset threshold value, acquiring a simulation value acquired after resetting the pre-parameter and the simulation parameter until the error value between the acquired simulation value and the measured value is not greater than the preset threshold value; fitting the obtained simulation value to obtain circuit model parameters of the on-chip calibration piece; and acquiring the S parameter of the radio frequency microwave probe based on the circuit model parameter and an OSL algorithm.
In an embodiment of the present invention, the pre-parameters include three-dimensional sizes and relative positions of the rf microwave probe and the on-wafer calibration piece, and a material of the on-wafer calibration piece; the simulation parameters include a simulation frequency range and a simulation port.
In an embodiment of the present invention, the S parameter of the rf microwave probe obtained based on the circuit model parameter and the OSL algorithm is:
Figure DEST_PATH_IMAGE001
wherein E is00、E01、E10、E11Representing an error term in a signal flow graph of an OSL algorithm, S corresponding to an S parameter of the RF microwave probe11、S12、S21、S22，ΓO、ΓS、ΓLRespectively representing the reflection coefficients of the on-chip calibration member for open circuit, short circuit and load matching, gammaMO、ΓMS、ΓMLRespectively indicates that the radio frequency microwave probes are respectively contacted with the coaxial end surfaces when being calibratedThe open, short and load of the sheet calibration piece match the measured reflectance.
In an embodiment of the present invention, the circuit model parameters
Figure DEST_PATH_IMAGE002
Wherein
Figure DEST_PATH_IMAGE003
Represents the insertion loss value in decibels;
Figure DEST_PATH_IMAGE004
representing a characteristic impedance;
Figure DEST_PATH_IMAGE005
，lwhich represents the length of the transmission line,cwhich is indicative of the speed of light in the vacuum,
Figure DEST_PATH_IMAGE006
represents a relative dielectric constant;
Figure DEST_PATH_IMAGE007
representing the frequency in units of GHZ;
Figure DEST_PATH_IMAGE008
，
Figure DEST_PATH_IMAGE009
，
Figure DEST_PATH_IMAGE010
and
Figure DEST_PATH_IMAGE011
respectively representing the frequency-dependent functions of the inductance and the capacitance fitted by a third-order polynomial, C0、C1、C2、C3、L0、L1、L2And L3Are fitting coefficients.
The invention provides an S parameter extraction system of a radio frequency microwave probe, which comprises a simulation value acquisition module, a measured value acquisition module, a calculation module, a fitting module and an S parameter acquisition module;
the simulation value acquisition module is used for acquiring simulation values of open-circuit, short-circuit and load-matched reflection coefficients and straight-through transmission coefficients of the on-chip calibration piece, which are obtained by performing three-dimensional electromagnetic field simulation on the basis of a radio frequency microwave probe and the pre-set parameters and simulation parameters of the on-chip calibration piece by the three-dimensional electromagnetic field simulation system;
the measured value acquisition module is used for acquiring measured values of the reflection coefficients and the through transmission coefficients of the on-chip calibration piece, which are obtained by the test system through double-port S parameter calibration based on the simulation parameters, wherein the reflection coefficients are matched with open circuits, short circuits and loads;
the calculating module is used for calculating an error value of the simulated value and the measured value; if the error value is greater than a preset threshold value, acquiring a simulation value acquired after resetting the pre-parameter and the simulation parameter until the error value between the acquired simulation value and the measured value is not greater than the preset threshold value;
the fitting module is used for fitting the obtained simulation value to obtain circuit model parameters of the on-chip calibration piece;
the S parameter acquisition module is used for acquiring the S parameter of the radio frequency microwave probe based on the circuit model parameter and an OSL algorithm.
The present invention provides a storage medium having stored thereon a computer program which, when executed by a processor, implements the above-described S-parameter extraction method for a radio frequency microwave probe.
The invention provides an S parameter extraction terminal of a radio frequency microwave probe, which comprises: a processor and a memory;
the memory is used for storing a computer program;
the processor is used for executing the computer program stored in the memory so as to enable the S parameter extraction terminal of the radio frequency microwave probe to execute the S parameter extraction method of the radio frequency microwave probe.
The invention provides an S parameter extraction system of a radio frequency microwave probe, which comprises an S parameter extraction terminal of the radio frequency microwave probe, a three-dimensional electromagnetic field simulation system and a test system;
the three-dimensional electromagnetic field simulation system is used for performing three-dimensional electromagnetic field simulation based on the radio frequency microwave probe and the pre-set parameters and simulation parameters of the on-chip calibration piece, acquiring simulation values of the open-circuit, short-circuit and load-matched reflection coefficients and the straight-through transmission coefficients of the on-chip calibration piece, and sending the simulation values to the S parameter extraction terminal of the radio frequency microwave probe;
the test system is used for calibrating the double-port S parameters based on the simulation parameters, acquiring measured values of reflection coefficients and through transmission coefficients of open circuit, short circuit and load matching of the on-chip calibration piece, and sending the measured values to the S parameter extraction terminal of the radio frequency microwave probe.
In an embodiment of the present invention, the three-dimensional electromagnetic field simulation system performs three-dimensional electromagnetic field simulation by using a finite element method or a moment method.
In an embodiment of the invention, the test system adopts a self-calibration algorithm to carry out double-port S parameter calibration; the self-calibration algorithm adopts an LRRM algorithm or an MTRL algorithm.
As described above, the S parameter extraction method and system, the storage medium, and the terminal of the rf microwave probe according to the present invention have the following advantageous effects:
(1) combining a three-dimensional electromagnetic simulation and self-calibration algorithm, iterating simulation and actual measurement results, describing complex physical parameters such as three-dimensional sizes, materials and relative positions of the radio frequency microwave probe and the calibration piece by using a simple circuit model, and obtaining a key behavior model S parameter;
(2) the method is rapid, convenient and fast, and has strong operability;
(3) the on-chip test precision of the radio frequency microwave is effectively improved.
Drawings
FIG. 1 is a flowchart illustrating an S parameter extraction method of an RF microwave probe according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a three-dimensional electromagnetic field simulation system according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an RF microwave probe circuit model according to an embodiment of the present invention;
FIG. 4 is a signal flow diagram illustrating an embodiment of the OSL algorithm-based S parameter extraction method of the present invention;
FIG. 5 is a schematic structural diagram of an S-parameter extraction system of an RF microwave probe according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of an S parameter extraction terminal of the rf microwave probe according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of an S-parameter extraction system of an rf microwave probe according to another embodiment of the present invention.
Description of the element reference numerals
51-a simulation value acquisition module; 52-actual measurement value acquisition module; 53-a calculation module; 54-a fitting module; 55-parameter acquisition module; 61-a processor; 62-a memory; 71-an S parameter extraction terminal of the radio frequency microwave probe; 72-a three-dimensional electromagnetic field simulation system; 73-test system.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The method and the system for extracting the S parameter of the radio frequency microwave probe, the storage medium and the terminal accurately extract the S parameter of the radio frequency microwave probe by adopting the three-dimensional electromagnetic simulation and self-calibration algorithm, are simple and convenient, and effectively improve the on-chip test precision of the radio frequency microwave, thereby providing support for the development of the industry.
As shown in fig. 1, in an embodiment, the method for extracting S-parameters of an rf microwave probe of the present invention includes the following steps:
and step S1, obtaining a simulated value of the reflection coefficient and the straight-through transmission coefficient of the on-chip calibration piece, which is obtained by performing three-dimensional electromagnetic field simulation on the three-dimensional electromagnetic field simulation system based on the radio frequency microwave probe and the pre-set parameters and simulation parameters of the on-chip calibration piece.
Specifically, the main factors affecting the S-parameter of the rf microwave probe include:
(1) the three-dimensional sizes of the radio frequency microwave probe and the on-wafer calibration piece are set;
(2) a backing material on the sheet alignment member;
(3) and the radio frequency microwave probe is opposite to the on-chip calibration chip.
The pre-set parameters and simulation parameters of the on-chip calibration piece of the radio frequency microwave probe are set in the three-dimensional electromagnetic field simulation system shown in figure 2. Wherein the pre-set parameters comprise the three-dimensional size and relative position of the radio frequency microwave probe and the on-chip calibration piece, and the material of the on-chip calibration piece; the simulation parameters include a simulation frequency range and a simulation port.
And the three-dimensional electromagnetic field simulation system carries out three-dimensional electromagnetic field simulation according to the prepositive parameters and the simulation parameters to obtain simulation values of Open circuit (Open), Short circuit (Short), Load matching (Load) reflection coefficients and straight-through (Thru) transmission coefficients, and sends the simulation values to an S parameter extraction terminal of the radio frequency microwave probe. Preferably, the three-dimensional electromagnetic field simulation system performs three-dimensional electromagnetic field simulation by using a Finite Element Method (FEM) or a moment Method (moment).
And step S2, acquiring measured values of the reflection coefficients and the through transmission coefficients of the on-chip calibration piece, which are obtained by the test system through double-port S parameter calibration based on the simulation parameters, wherein the measured values are matched with the open circuit, the short circuit and the load.
Specifically, a test system using the simulation parameters is constructed. The test system carries out double-port S parameter calibration by adopting a self-calibration algorithm to obtain measured values of reflection coefficients and direct transmission coefficients matched with open circuits, short circuits and loads, and sends the measured values to an S parameter extraction terminal of the radio frequency microwave probe. Preferably, the self-calibration algorithm adopts an LRRM (Line selected-open selected-short Match) algorithm or an MTRL (multiline Thru selection load) algorithm.
Step S3, calculating an error value between the simulated value and the measured value; if the error value is greater than a preset threshold value, acquiring a simulation value acquired after resetting the pre-parameter and the simulation parameter until the error value between the acquired simulation value and the measured value is not greater than the preset threshold value.
Specifically, the S parameter extraction terminal of the radio frequency microwave probe performs error calculation on the simulation value and the measured value, and if the obtained error value is greater than a preset threshold value, it indicates that the current setup of the pre-parameter and the simulation parameter does not meet the requirements, and needs to be reset, and then obtains the simulation value obtained after the pre-parameter and the simulation parameter are reset. And performing iterative processing until the error value of the simulated value and the measured value is not greater than the preset threshold value, which indicates that the current pre-parameter and the current simulation parameter meet the requirements. Therefore, the simulation values of the reflection coefficients of the corresponding open circuit, short circuit and load matching and the transmission coefficients of the through circuit are the optimal simulation values.
And step S4, fitting the obtained simulated value to obtain the circuit model parameters of the on-chip calibration piece.
Specifically, the optimal simulation value is fitted according to the rf microwave probe circuit model shown in fig. 3, so as to obtain the circuit model parameters of the on-chip calibration component.
In an embodiment of the present invention, the circuit model parameters
Figure DEST_PATH_IMAGE012
Wherein
Figure DEST_PATH_IMAGE013
Represents the insertion loss value in decibels;
Figure 990444DEST_PATH_IMAGE004
represents a characteristic impedance, typically 50 Ω;
Figure DEST_PATH_IMAGE014
，lwhich represents the length of the transmission line,cindicating the speed of vacuum light, i.e. 299792458m/s,
Figure DEST_PATH_IMAGE015
represents a relative dielectric constant;
Figure DEST_PATH_IMAGE016
representing the frequency in units of GHZ;
Figure DEST_PATH_IMAGE017
，
Figure DEST_PATH_IMAGE018
，
Figure DEST_PATH_IMAGE019
and
Figure DEST_PATH_IMAGE020
respectively representing the frequency-dependent functions of the inductance and the capacitance fitted by a third-order polynomial, C0、C1、C2、C3、L0、L1、L2And L3Are fitting coefficients.
And S5, acquiring S parameters of the radio frequency microwave probe based on the circuit model parameters and an Open-Short-Load (OSL) algorithm.
Specifically, according to the circuit model parameters, calculating the S parameters of the rf microwave probe based on the signal flow diagram of the OSL algorithm shown in fig. 4
Figure DEST_PATH_IMAGE021
Wherein E in the signal flow diagram00、 E01、E10、E11Representing error terms in a signal flow diagram corresponding to said RF microwave probeS of the S parameter of the needle11、S12、S21、S22，ΓO、ΓS、ΓLRespectively representing the reflection coefficients of the on-chip calibration member for open circuit, short circuit and load matching, gammaMO、ΓMS、ΓMLRespectively representing the reflection coefficients of open circuit, short circuit and load matching measurement of the RF microwave probe respectively contacting the sheet calibration piece when the coaxial end face is calibrated.
As shown in fig. 5, in an embodiment of the present invention, the S-parameter extraction system of the rf microwave probe includes a simulated value acquisition module 51, an actual measurement value acquisition module 52, a calculation module 53, a fitting module 54, and an S-parameter acquisition module 55.
The simulation value obtaining module 51 is configured to obtain a simulation value of the open-circuit, short-circuit, load-matching reflection coefficient and straight-through transmission coefficient of the on-chip calibration piece, which are obtained by performing three-dimensional electromagnetic field simulation on the basis of the radio frequency microwave probe and the pre-set parameters and simulation parameters of the on-chip calibration piece by the three-dimensional electromagnetic field simulation system.
The measured value obtaining module 52 is configured to obtain measured values of the reflection coefficients and the through transmission coefficients of the on-chip calibration component, which are obtained by calibrating the dual-port S parameters of the test system based on the simulation parameters, and are matched with the open circuit, the short circuit and the load;
the calculating module 53 is connected to the simulated value acquiring module 51 and the measured value acquiring module 52, and is configured to calculate an error value between the simulated value and the measured value; if the error value is greater than a preset threshold value, acquiring a simulation value acquired after resetting the pre-parameter and the simulation parameter until the error value between the acquired simulation value and the measured value is not greater than the preset threshold value;
the fitting module 54 is connected to the calculating module 53, and is configured to fit the obtained simulated value to obtain a circuit model parameter of the on-chip calibration component;
the S parameter obtaining module 55 is connected to the fitting module 54, and is configured to obtain an S parameter of the rf microwave probe based on the circuit model parameter and the OSL algorithm.
The structures and principles of the simulated value obtaining module 51, the measured value obtaining module 52, the calculating module 53, the fitting module 54, and the S parameter obtaining module 55 correspond to the steps in the S parameter extracting method of the rf microwave probe one to one, and therefore, the description thereof is omitted.
It should be noted that the division of the modules of the above apparatus is only a logical division, and the actual implementation may be wholly or partially integrated into one physical entity, or may be physically separated. And these modules can be realized in the form of software called by processing element; or may be implemented entirely in hardware; and part of the modules can be realized in the form of calling software by the processing element, and part of the modules can be realized in the form of hardware. For example, the x module may be a processing element that is set up separately, or may be implemented by being integrated in a chip of the apparatus, or may be stored in a memory of the apparatus in the form of program code, and the function of the x module may be called and executed by a processing element of the apparatus. Other modules are implemented similarly. In addition, all or part of the modules can be integrated together or can be independently realized. The processing element described herein may be an integrated circuit having signal processing capabilities. In implementation, each step of the above method or each module above may be implemented by an integrated logic circuit of hardware in a processor element or an instruction in the form of software.
For example, the above modules may be one or more integrated circuits configured to implement the above methods, such as: one or more Application Specific Integrated Circuits (ASICs), or one or more microprocessors (DSPs), or one or more Field Programmable Gate Arrays (FPGAs), among others. For another example, when one of the above modules is implemented in the form of a Processing element scheduler code, the Processing element may be a general-purpose processor, such as a Central Processing Unit (CPU) or other processor capable of calling program code. For another example, these modules may be integrated together and implemented in the form of a system-on-a-chip (SOC).
The storage medium of the present invention stores thereon a computer program, which when executed by a processor implements the above-described S-parameter extraction method for a radio frequency microwave probe. The storage medium includes: various media that can store program codes, such as ROM, RAM, magnetic disk, U-disk, memory card, or optical disk.
As shown in fig. 6, in an embodiment, the S parameter extracting terminal of the rf microwave probe of the present invention includes: a processor 61 and a memory 62.
The memory 62 is used for storing computer programs.
The memory 62 includes: various media that can store program codes, such as ROM, RAM, magnetic disk, U-disk, memory card, or optical disk.
The processor 61 is connected to the memory 62 and configured to execute the computer program stored in the memory 62, so that the S parameter extraction terminal of the rf microwave probe executes the S parameter extraction method of the rf microwave probe.
Preferably, the Processor 61 may be a general-purpose Processor, including a Central Processing Unit (CPU), a Network Processor (NP), and the like; the Integrated Circuit may also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic device, or discrete hardware components.
As shown in fig. 7, in an embodiment, the S-parameter extraction system of the rf microwave probe of the present invention includes the S-parameter extraction terminal 71 of the rf microwave probe, the three-dimensional electromagnetic field simulation system 72, and the test system 73.
The three-dimensional electromagnetic field simulation system 72 is connected with the S parameter extraction terminal 71 of the radio frequency microwave probe, and is used for performing three-dimensional electromagnetic field simulation based on the radio frequency microwave probe and the pre-parameters and simulation parameters of the on-chip calibration piece, acquiring simulation values of the open circuit, short circuit, load matching reflection coefficients and straight-through transmission coefficients of the on-chip calibration piece, and sending the simulation values to the S parameter extraction terminal 71 of the radio frequency microwave probe. Preferably, the three-dimensional electromagnetic field simulation system performs three-dimensional electromagnetic field simulation by using a finite element method or a moment method.
The test system 73 is connected to the S parameter extraction terminal 71 of the rf microwave probe, and is configured to perform dual-port S parameter calibration based on the simulation parameters, obtain measured values of reflection coefficients and through transmission coefficients of open circuit, short circuit, and load matching of the on-chip calibration component, and send the measured values to the S parameter extraction terminal 71 of the rf microwave probe. Preferably, the test system performs a two-port S parameter calibration using a self-calibration algorithm. The self-calibration algorithm adopts an LRRM algorithm or an MTRL algorithm.
In summary, the method and system for extracting S-parameters of a radio frequency microwave probe, the storage medium and the terminal of the present invention combine the three-dimensional electromagnetic simulation and self-calibration algorithm to iterate the simulation and actual measurement results, so as to describe the complex physical parameters of the radio frequency microwave probe and the calibration piece, such as three-dimensional size, material, and relative position, with a simple circuit model and obtain the S-parameters of the key behavior model; the method is rapid, convenient and fast, and has strong operability; the on-chip test precision of the radio frequency microwave is effectively improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (9)

1. The S parameter extraction method of the radio frequency microwave probe is characterized by comprising the following steps:
acquiring a simulation value of open-circuit, short-circuit and load-matched reflection coefficients and straight-through transmission coefficients of an on-chip calibration piece, which are obtained by performing three-dimensional electromagnetic field simulation on a three-dimensional electromagnetic field simulation system based on a radio frequency microwave probe and a pre-set parameter and a simulation parameter of the on-chip calibration piece;
acquiring measured values of open-circuit, short-circuit and load-matched reflection coefficients and straight-through transmission coefficients of the on-chip calibration piece, which are obtained by calibrating a double-port S parameter by a test system based on the simulation parameter;
calculating an error value between the simulated value and the measured value; if the error value is greater than a preset threshold value, acquiring a simulation value acquired after resetting the pre-parameter and the simulation parameter until the error value between the acquired simulation value and the measured value is not greater than the preset threshold value;
fitting the obtained simulation value to obtain circuit model parameters of the on-chip calibration piece;
acquiring an S parameter of the radio frequency microwave probe based on the circuit model parameter and an Open-Short-Load algorithm;
the S parameter of the radio frequency microwave probe obtained based on the circuit model parameter and the Open-Short-Load algorithm is
Figure FDA0003202228840000011
Wherein E is00、E01、E10、E11Representing an error item in a signal flow diagram of an Open-Short-Load algorithm, corresponding to S of an S parameter of the radio frequency microwave probe11、S12、S21、S22，ΓO、ΓS、ΓLRespectively representing the reflection coefficients of the on-chip calibration member for open circuit, short circuit and load matching, gammaMO、ΓMS、ΓMLRespectively representing the reflection coefficients of open circuit, short circuit and load matching measurement of the RF microwave probe respectively contacting the sheet calibration member when calibrated to the coaxial end face, wherein E00Representing the forward directional term, E01Indicates the reverse error, E10Denotes the forward error, E11Representing a forward source match, S11Representing input port reflection coefficient, S21Denotes the forward transmission coefficient, S12Representing the reverse transmission coefficient, S22Representing the output port reflection coefficient.
2. The method for extracting S-parameters of a radio frequency microwave probe according to claim 1, characterized in that: the pre-parameters comprise the three-dimensional sizes and relative positions of the radio frequency microwave probe and the on-chip calibration piece and the material of the on-chip calibration piece; the simulation parameters include a simulation frequency range and a simulation port.
3. The method for extracting S-parameters of a radio frequency microwave probe according to claim 1, characterized in that: the circuit model parameters
Figure FDA0003202228840000012
Wherein
Figure FDA0003202228840000013
C(f)＝C0+C1f+C2f2+C3f3，L(f)＝L0+L1f+L2f2+L3f3，f|GHzRepresenting frequency in GHz, dBLossRepresenting the value of insertion loss, Z, in decibels0Representing characteristic impedance, C (f) and L (f) respectively representing the relation functions of inductance and capacitance along with frequency fitted by a third-order polynomial, C0、C1、C2、C3、L0、L1、L2And L3For the fitting coefficients, l represents the transmission line length, c represents the vacuum speed of light, εrRepresents a relative dielectric constant.
4. The S parameter extraction system of the radio frequency microwave probe is characterized by comprising a simulated value acquisition module, a measured value acquisition module, a calculation module, a fitting module and an S parameter acquisition module;
the simulation value acquisition module is used for acquiring simulation values of open-circuit, short-circuit and load-matched reflection coefficients and straight-through transmission coefficients of the on-chip calibration piece, which are obtained by performing three-dimensional electromagnetic field simulation on the basis of a radio frequency microwave probe and the pre-set parameters and simulation parameters of the on-chip calibration piece by the three-dimensional electromagnetic field simulation system;
the measured value acquisition module is used for acquiring measured values of the reflection coefficients and the through transmission coefficients of the on-chip calibration piece, which are obtained by the test system through double-port S parameter calibration based on the simulation parameters, wherein the reflection coefficients are matched with open circuits, short circuits and loads;
the calculating module is used for calculating an error value of the simulated value and the measured value; if the error value is greater than a preset threshold value, acquiring a simulation value acquired after resetting the pre-parameter and the simulation parameter until the error value between the acquired simulation value and the measured value is not greater than the preset threshold value;
the fitting module is used for fitting the obtained simulation value to obtain circuit model parameters of the on-chip calibration piece;
the S parameter acquisition module is used for acquiring S parameters of the radio frequency microwave probe based on the circuit model parameters and an Open-Short-Load algorithm;
the S parameter of the radio frequency microwave probe obtained based on the circuit model parameter and the Open-Short-Load algorithm is
Figure FDA0003202228840000021
Wherein E is00、E01、E10、E11Representing an error item in a signal flow diagram of an Open-Short-Load algorithm, corresponding to S of an S parameter of the radio frequency microwave probe11、S12、S21、S22，ΓO、ΓS、ΓLRespectively representing the reflection coefficients of the on-chip calibration member for open circuit, short circuit and load matching, gammaMO、ΓMS、ΓMLRespectively representing the reflection coefficients of open circuit, short circuit and load matching measurement of the RF microwave probe respectively contacting the sheet calibration member when calibrated to the coaxial end face, wherein E00Representing the forward directional term, E01Indicates the reverse error, E10Denotes the forward error, E11Representing a forward source match, S11Representing input port reflection coefficient, S21Denotes the forward transmission coefficient, S12Representing the reverse transmission coefficient, S22Representing the output port reflection coefficient.
5. A storage medium having stored thereon a computer program, characterized in that the program, when being executed by a processor, implements the S-parameter extraction method of a radio frequency microwave probe according to any one of claims 1 to 3.
6. An S parameter extraction terminal of a radio frequency microwave probe is characterized by comprising: a processor and a memory;
the memory is used for storing a computer program;
the processor is configured to execute the computer program stored in the memory to enable the S-parameter extraction terminal of the rf microwave probe to execute the S-parameter extraction method of the rf microwave probe according to any one of claims 1 to 3.
7. The S parameter extraction system of the radio frequency microwave probe is characterized in that: an S parameter extraction terminal, a three-dimensional electromagnetic field simulation system and a test system comprising the radio frequency microwave probe of claim 6;
the three-dimensional electromagnetic field simulation system is used for performing three-dimensional electromagnetic field simulation based on the radio frequency microwave probe and the pre-set parameters and simulation parameters of the on-chip calibration piece, acquiring simulation values of the open-circuit, short-circuit and load-matched reflection coefficients and the straight-through transmission coefficients of the on-chip calibration piece, and sending the simulation values to the S parameter extraction terminal of the radio frequency microwave probe;
the test system is used for calibrating the double-port S parameters based on the simulation parameters, acquiring measured values of reflection coefficients and through transmission coefficients of open circuit, short circuit and load matching of the on-chip calibration piece, and sending the measured values to the S parameter extraction terminal of the radio frequency microwave probe.
8. The system for extracting S-parameters of a radio frequency microwave probe according to claim 7, wherein: the three-dimensional electromagnetic field simulation system adopts a finite element method or a moment method to carry out three-dimensional electromagnetic field simulation.
9. The system for extracting S-parameters of a radio frequency microwave probe according to claim 7, wherein: the test system adopts a self-calibration algorithm to calibrate the double-port S parameter; the self-calibration algorithm adopts a Line Reflected-open Reflected-short Match algorithm or a Multiline thread Reflection Load algorithm.
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