CN113073311B - Device and method for preparing tantalum nitride film by precursor coating laser - Google Patents

Device and method for preparing tantalum nitride film by precursor coating laser Download PDF

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CN113073311B
CN113073311B CN202110362659.1A CN202110362659A CN113073311B CN 113073311 B CN113073311 B CN 113073311B CN 202110362659 A CN202110362659 A CN 202110362659A CN 113073311 B CN113073311 B CN 113073311B
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tantalum nitride
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laser
pen
nitride film
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CN113073311A (en
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蔡志隆
刘崇志
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Beijing Libaosheng Technology Co ltd
Top Flight Technology Co ltd
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Beijing Libaosheng Technology Co ltd
Top Flight Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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  • Other Surface Treatments For Metallic Materials (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to a device and a method for preparing a tantalum nitride film by precursor coating laser. According to the invention, the laser lens module irradiates the surface of the base material to raise the surface temperature, the liquid coating is atomized by the high-pressure carrier gas in the spray pen and is premixed into the reaction precursor, and the reaction precursor is sprayed from the discharge hole to the heated surface of the base material to react to form tantalum nitride. The method of the invention can increase the ratio of tantalum to nitrogen in the tantalum nitride film by alternatively supplying the liquid coating to react, thereby obtaining the tantalum nitride film with excellent quality. The invention can work under the atmosphere, has low requirement on environment and high film forming quality; overcomes the dependence of the prior art on film forming equipment and harsh environment, ensures that the tantalum nitride film forming process is changed into a simple spraying process, greatly reduces the equipment cost and is convenient to operate and implement.

Description

Device and method for preparing tantalum nitride film by precursor coating laser
Technical Field
The invention relates to the technical field of preparation of tantalum nitride films, in particular to a device and a method for preparing a tantalum nitride film by precursor coating laser.
Background
The tantalum nitride film has high hardness and good chemical and thermal stability. Tantalum is more plastic and corrosion resistant than molybdenum and tungsten in corrosion resistant media, and therefore is widely used in the mechanical industry, especially in some fields with higher requirements on materials, and tantalum nitride coating technology is utilized to improve the application period and the use limit of the materials. In recent years, tantalum nitride materials are also widely used in the field of electronic manufacturing, and tantalum nitride has good chemical and thermal stability, and has a good barrier protection effect on a coating material, so that tantalum nitride materials are widely used in the manufacturing of semiconductor integrated circuits and devices of microwaves. Meanwhile, the high wear resistance, corrosion resistance and strong chemical and thermal stability are also applied to a large number of semiconductor processing equipment. With the development of semiconductor manufacturing processes, the requirements for equipment materials are higher, so that a large number of coating processes are applied in the field, and one of the coating processes is tantalum nitride.
In the aspect of preparation of the tantalum nitride film, a magnetron sputtering method, a physical deposition method, a chemical deposition method and a muddy light discharge method proposed by recent researches are mainly adopted. Different requirements are imposed on the quality of tantalum nitride films in different fields of application. In the manufacture of semiconductor integrated circuits, there are relatively high requirements on some electrical characteristics of tantalum nitride films, so that in such applications, chemical deposition, physical deposition, and atomic layer deposition are mainly used to prepare high-purity and high-quality tantalum nitride crystal films. The deposition method can well control the uniformity and crystalline structure of the film thickness, but the industrialized deposition equipment is unfavorable for equipment part coating with large size and complex appearance.
In the application of the device parts, the purity, the crystalline state and the uniformity of the tantalum nitride film are lower than those in the manufacturing application of a semiconductor integrated circuit, and the integrity of the whole coating of the tantalum nitride film and the convenience in processing are more important. When plating tantalum nitride films on large-scale equipment workpieces, methods such as magnetron sputtering and muddy light discharge are mostly adopted, and high-purity tantalum is generally used as an electrode, and free tantalum ions react with nitrogen atoms to form tantalum nitride. The method also needs to specially design corresponding coating equipment, and has certain requirements on the environmental conditions and the reaction temperature of the coating. In the case of coating parts with small batches, large sizes and complex shapes, the equipment cost becomes high.
Disclosure of Invention
Aiming at the problems existing in the prior art, the invention aims to provide a device for preparing a tantalum nitride film by precursor coating laser, which can finish the preparation of the tantalum nitride film without depending on high-cost equipment and severe environmental conditions, and has good quality and convenient operation.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the device for preparing the tantalum nitride film by coating laser on the precursor comprises a base, a spray pen and a laser lens module, wherein the spray pen and the laser lens module are arranged on the base;
the spray pen comprises a pen tube, a needle head arranged at the front end of the pen tube, a pen cap covering the needle head and screwed with the pen tube, and a feed inlet arranged at the rear end of the pen tube; the pen cap is provided with a discharge hole matched with the needle, and the distance between the needle and the discharge hole can be adjusted by rotating the pen cap;
the feed inlet comprises an air inlet pipe and liquid inlet pipes which are arranged on the air inlet pipe and are communicated with each other;
the laser lens module comprises a tubular shell, a first convex lens arranged in the shell, a round cap screwed at the front end of the shell, a second convex lens clamped on the round cap and an optical fiber waveguide arranged at the rear end of the shell; the distance between the first convex mirror and the second convex mirror can be adjusted by rotating the round cap; the fiber waveguide is used for introducing a laser beam.
Preferably, the device further comprises two flow regulating valves respectively connected with the air inlet pipe and the liquid inlet pipe.
Preferably, the base is provided with a lens module clamp, and the lens module clamp is rotatably arranged on the base.
Preferably, the base comprises a grab handle and a supporting plate, the grab handle is fixed at the bottom of the supporting plate, and the spray pen and the laser lens module are arranged on the supporting plate.
The invention also discloses a method for preparing the tantalum nitride film by using the precursor coating laser, which is realized by adopting the device for preparing the tantalum nitride film by using the precursor coating laser, and comprises the following steps:
s1: fixing the base material, and then enabling the spray pen to be perpendicular to the tangent plane of the base material at a fixed distance; the angle of the laser lens module is adjusted, so that the vertical lines at the centers of the spray pen and the laser lens module intersect on the surface of the base material, the surface area of laser beam imaging is ensured to be larger than the final coating landing area, and the laser beam imaging completely surrounds the coating landing point;
s2: closing a liquid inlet pipe to stop the supply of liquid coating, opening an air inlet pipe to pass high-pressure carrier gas, and finally crossing the high-pressure carrier gas and a laser beam on the surface of the base material, maintaining the tangent plane of the surface of the base material at the same height with a spray pen, and carrying out three-dimensional comprehensive scanning at equal speed along the surface of a required coating film;
s3: opening a liquid inlet pipe to supply liquid paint, opening an air inlet pipe to be communicated with high-pressure carrier gas, atomizing the liquid paint by the high-pressure carrier gas and mixing the liquid paint into a reaction precursor in a pen pipe, and spraying and landing the reaction precursor and converging the reaction precursor with a laser beam on the surface of a base material; the laser beam energy is increased, the scanning speed is reduced, the scanning path of the S2 is repeated, the spray pen and the tangent plane of the surface of the base material are maintained at the same height, and the three-dimensional comprehensive scanning is carried out along the surface of the film to be coated at the same speed; the surface of the base material is irradiated by the stimulated light beam to raise the temperature, and the reaction precursor is absorbed by the surface of the base material and reacts to form tantalum nitride;
wherein, the steps S2 and S3 are repeated for a plurality of times in turn;
the liquid coating is diethyl amine tantalum or liquid organic amine tantalum; the high-pressure carrier gas is nitrogen/ammonia/hydrogen mixed gas, nitrogen/nitric oxide/hydrogen mixed gas or nitrogen/nitrous oxide/hydrogen mixed gas.
Preferably, steps S2 and S3 are repeated 2-5 times in sequence.
Preferably, the method further comprises a step S4 of closing the liquid inlet pipe to stop the supply of the liquid coating, opening the air inlet pipe to allow the high-pressure carrier gas to flow, increasing the energy of the laser beam and reducing the scanning rate, repeating the scanning path of the step S2, maintaining the spraying pen and the surface section of the base material at the same height, and performing three-dimensional comprehensive scanning along the surface of the base material at a constant speed; and the tantalum nitride film attached to the surface of the base material is annealed.
After the scheme is adopted, the laser lens module irradiates the surface of the base material to raise the surface temperature, the high-pressure carrier gas is used for atomizing the liquid coating in the spray pen and mixing the liquid coating into the reaction precursor in advance, and the reaction precursor is sprayed from the discharge hole to the heated surface of the base material to react to form tantalum nitride. Because the reaction occurs in the atmospheric environment, oxygen molecules in the atmosphere can react with hydrogen molecules in carrier gas at first, and meanwhile, less tantalum oxide is generated, the implementation method of the invention takes part in the reaction by alternately supplying the liquid coating, and when the liquid coating is lack of taking part in the reaction, the oxide on the surface of the material is reduced by utilizing the reducibility of reaction gas hydrogen and the like, so that the ratio of tantalum to nitrogen in the tantalum nitride film is increased, and the tantalum nitride film with excellent quality is obtained. The invention can work under the atmosphere, has low requirement on environment and high film forming quality; overcomes the dependence of the existing tantalum nitride film forming process on film forming equipment and harsh environment, so that the tantalum nitride film forming process becomes a simple spraying process, greatly reduces the equipment cost and is convenient to operate and implement.
Drawings
FIG. 1 is a schematic diagram of the present invention.
Fig. 2 is a schematic view of a spray pen.
Fig. 3 is a schematic diagram of a laser lens module.
Fig. 4 is a schematic view of the working state of the present invention.
Description of the reference numerals:
base 10, pallet 11, grab handle 12, pen holder 13, lens module holder 14;
the pen comprises a spray pen 20, a pen tube 21, a needle head 22, a pen cap 23, an air inlet pipe 24, a liquid inlet pipe 25 and a discharge hole 26;
the laser lens module 30, the shell 31, the round cap 32, the first convex mirror 33, the second convex mirror 34 and the optical fiber waveguide 35;
a base material 40.
Detailed Description
As shown in fig. 1, the invention discloses a device for preparing a tantalum nitride film by precursor coating laser, which comprises a base 10, a spray pen 20 and a laser lens module 30, wherein the base 10 comprises a metal supporting plate 11, and a grab handle 12 is arranged at the bottom of the supporting plate 11 and is used for holding by a hand or a mechanical arm. A spray pen clamp 13 and a lens module clamp 14 are arranged above the supporting plate 11, and the spray pen 20 and the laser lens module 30 are respectively clamped and fixed by the two clamps, wherein the lens module clamp 14 can rotate on the supporting plate 11 to adjust the included angle between the spray pen 20 and the laser lens module 30.
As shown in fig. 2, the pen 20 includes a barrel 21, a needle 22 provided at the front end of the barrel 21 and protruding, a cap 23 covering the needle 22 and screwed with the barrel 21, and a feed port provided at the rear end of the barrel 21. The pen cap 23 is provided with a discharge hole 26 matched with the needle 22, and the distance between the needle 22 and the discharge hole 26 can be adjusted by rotating the pen cap 23 so as to control the discharge amount and the spreading angle of the discharge hole 26.
The feed inlet includes intake pipe 24 and sets up on intake pipe 24 and the feed liquor pipe 25 that switches on each other, and intake pipe 24 is used for introducing high-pressure carrier gas, and feed liquor pipe 25 is then used for introducing liquid coating. A flow regulating valve can be respectively connected and arranged at the end parts of the air inlet pipe 24 and the liquid inlet pipe 25 for controlling flow and pressure. When the high-pressure carrier gas passes through the air inlet pipe 24, liquid paint is brought into the liquid inlet pipe 25 and atomized, the atomized paint and the carrier gas form a reaction precursor, and the reaction precursor can be sprayed on the surface of the base material at a certain diffusion angle through the discharge hole.
As shown in fig. 3, the laser lens module 30 includes a tubular housing 31, a first convex mirror 33 disposed in the housing 31 and at a middle position, a cap 32 screwed to a front end of the housing 31, a second convex mirror 34 clamped on the cap 32, and an optical fiber waveguide 35 disposed at a rear end of the housing 31. The laser beam is introduced into the laser head module through the optical fiber, and the distance between the first convex mirror 33 and the second convex mirror 34 can be adjusted by rotating the circular cap 32, so that the angle of laser beam diffusion can be adjusted.
The invention also discloses a method for preparing the tantalum nitride film by the precursor coating laser, which is realized by adopting the device for preparing the tantalum nitride film by the precursor coating laser, wherein the liquid coating used in the method is tantalum diethylamine or liquid organic amine, and the high-pressure carrier gas is nitrogen/ammonia/hydrogen mixed gas, nitrogen/nitric oxide/hydrogen mixed gas or nitrogen/nitrous oxide/hydrogen mixed gas.
The method comprises the following steps:
s1: fixing the base material 40 and then making the spray pen 20 perpendicular to the cut surface of the base material 40 at a fixed distance; the angle of the laser lens module 30 is adjusted so that the perpendicular lines at the center of the stylus 20 and the laser lens module 30 intersect the surface of the base material 40 and ensure that the laser beam imaging surface area is greater than the final coating landing area, and the laser beam imaging completely surrounds the coating landing site.
S2: closing the liquid inlet pipe to stop the supply of the liquid coating, opening the air inlet pipe to pass high-pressure carrier gas, and finally crossing the high-pressure carrier gas and the laser beam on the surface of the base material 40, maintaining the tangential plane on the surface of the base material 40 at the same height with the spray pen 20, and carrying out three-dimensional full scanning at equal speed along the surface of the required coating film, as shown in fig. 4.
S3: opening a liquid inlet pipe to supply liquid paint, opening an air inlet pipe to be communicated with high-pressure carrier gas, atomizing the liquid paint by the high-pressure carrier gas and mixing the liquid paint into a reaction precursor in a pen pipe, and spraying and landing the reaction precursor and converging the reaction precursor with a laser beam on the surface of a base material 40; increasing the laser beam energy and reducing the scanning speed, repeating the scanning path of S2, maintaining the spray pen 20 and the tangent plane of the surface of the base material 40 at the same height, and carrying out three-dimensional comprehensive scanning along the surface of the required film coating at the same speed; the surface of the base material 40 is irradiated with the laser beam to raise the temperature, and the reactive precursor is absorbed by the surface of the base material 40 and reacts to form tantalum nitride in a nitrogen-rich atmosphere.
Steps S2 and S3 are repeated 2-5 times in sequence.
S4: closing a liquid inlet pipe to stop the supply of liquid coating, opening an air inlet pipe to be filled with high-pressure carrier gas, increasing the energy of laser beams, reducing the scanning speed, repeating the scanning path of S2, maintaining the surface sections of the spray pen 20 and the base material 40 at the same height, and performing three-dimensional comprehensive scanning at the same speed along the surface of the base material 40; so that the tantalum nitride film attached to the surface of the base material 40 is annealed.
The key point of the invention is that the laser lens module 30 irradiates the surface of the base material 40 to raise the surface temperature, the spray pen 20 atomizes the liquid coating through the high-pressure carrier gas and mixes the liquid coating into the reaction precursor in advance, and the reaction precursor is sprayed from the discharge hole to the heated surface of the base material 40 to react to form tantalum nitride. Because the reaction occurs in the atmospheric environment, oxygen molecules in the atmosphere can react with hydrogen molecules in carrier gas at first, and meanwhile, less tantalum oxide is generated, the implementation method of the invention takes part in the reaction by alternately supplying the liquid coating, and when the liquid coating is lack of taking part in the reaction, the oxide on the surface of the material is reduced by utilizing the reducibility of reaction gas hydrogen and the like, so that the ratio of tantalum to nitrogen in the tantalum nitride film is increased, and the tantalum nitride film with excellent quality is obtained.
The invention increases the total light energy absorption amount of the film by increasing the laser beam energy and reducing the scanning speed, so that the tantalum nitride film can reach the annealing temperature. The tantalum nitride is annealed in the nitrogen ion environment, so that the crystalline state and quality of the tantalum nitride can be effectively improved. Meanwhile, the annealing method only carries out local annealing on the tantalum nitride film coated on the surface, and the annealing deformation of the material is not caused.
All the steps of the invention are completed at room temperature, which can greatly reduce the thermal budget of production. The mechanical arm driven by the three-dimensional space can be adopted to replace manual operation, so that the quality and stability of the tantalum nitride film are further improved.
The invention improves the convenience of the tantalum nitride coating, can control the nitriding capacity and the nitriding layer performance, and has more uniform and complete coating effect on strengthening the processing of parts with large size and complex appearance. The invention can work under the atmosphere, has low requirements on the environment, low equipment cost and low thermal budget of production, overcomes the dependence of the existing tantalum nitride film forming process on film forming equipment and harsh environment, and ensures that the tantalum nitride film forming process becomes a simple spraying process. The whole cost of the coating has absolute advantage when coating large-size and small-batch parts.
The foregoing embodiments of the present invention are not intended to limit the technical scope of the present invention, and therefore, any minor modifications, equivalent variations and modifications made to the above embodiments according to the technical principles of the present invention still fall within the scope of the technical proposal of the present invention.

Claims (5)

1. The device for preparing the tantalum nitride film by precursor coating laser is characterized in that: the device comprises a base, a spray pen and a laser lens module, wherein the spray pen and the laser lens module are arranged on the base;
the spray pen comprises a pen tube, a needle head arranged at the front end of the pen tube, a pen cap covering the needle head and screwed with the pen tube, and a feed inlet arranged at the rear end of the pen tube; the pen cap is provided with a discharge hole matched with the needle, and the distance between the needle and the discharge hole can be adjusted by rotating the pen cap;
the feed inlet comprises an air inlet pipe and liquid inlet pipes which are arranged on the air inlet pipe and are communicated with each other;
the laser lens module comprises a tubular shell, a first convex lens arranged in the shell, a round cap screwed at the front end of the shell, a second convex lens clamped on the round cap and an optical fiber waveguide arranged at the rear end of the shell; the distance between the first convex mirror and the second convex mirror can be adjusted by rotating the round cap; the optical fiber waveguide is used for introducing laser beams;
the device also comprises two flow regulating valves which are respectively connected with the air inlet pipe and the liquid inlet pipe; the base is provided with a lens module clamp, and the lens module clamp is rotatably arranged on the base.
2. The precursor-coated laser apparatus for preparing a tantalum nitride film according to claim 1, wherein: the base comprises a grab handle and a supporting plate, wherein the grab handle is fixed at the bottom of the supporting plate, and the spray pen and the laser lens module are arranged on the supporting plate.
3. A method for preparing a tantalum nitride film by using the precursor coating laser, which is characterized in that the method for preparing the tantalum nitride film by using the precursor coating laser according to any one of claims 1-2 comprises the following steps:
s1: fixing the base material, and then enabling the spray pen to be perpendicular to the tangent plane of the base material at a fixed distance; the angle of the laser lens module is adjusted, so that the vertical lines at the centers of the spray pen and the laser lens module intersect on the surface of the base material, the surface area of laser beam imaging is ensured to be larger than the final coating landing area, and the laser beam imaging completely surrounds the coating landing point;
s2: closing a liquid inlet pipe to stop the supply of liquid coating, opening an air inlet pipe to pass high-pressure carrier gas, and finally crossing the high-pressure carrier gas and a laser beam on the surface of the base material, maintaining the tangent plane of the surface of the base material at the same height with a spray pen, and carrying out three-dimensional comprehensive scanning at equal speed along the surface of a required coating film;
s3: opening a liquid inlet pipe to supply liquid paint, opening an air inlet pipe to be communicated with high-pressure carrier gas, atomizing the liquid paint by the high-pressure carrier gas and mixing the liquid paint into a reaction precursor in a pen pipe, and spraying and landing the reaction precursor and converging the reaction precursor with a laser beam on the surface of a base material; the laser beam energy is increased, the scanning speed is reduced, the scanning path of the S2 is repeated, the spray pen and the tangent plane of the surface of the base material are maintained at the same height, and the three-dimensional comprehensive scanning is carried out along the surface of the film to be coated at the same speed; the surface of the base material is irradiated by the stimulated light beam to raise the temperature, and the reaction precursor is absorbed by the surface of the base material and reacts to form tantalum nitride;
wherein, the steps S2 and S3 are repeated for a plurality of times in turn;
the liquid coating is liquid organic amine tantalum; the high-pressure carrier gas is nitrogen/ammonia/hydrogen mixed gas, nitrogen/nitric oxide/hydrogen mixed gas or nitrogen/nitrous oxide/hydrogen mixed gas.
4. A method for preparing a tantalum nitride film by precursor coating laser according to claim 3, wherein: the steps S2 and S3 are repeated for 2 to 5 times in sequence.
5. A method for preparing a tantalum nitride film by precursor coating laser according to claim 3, wherein: s4, closing a liquid inlet pipe to stop the supply of liquid paint, opening an air inlet pipe to introduce high-pressure carrier gas, improving the laser beam energy and reducing the scanning rate, repeating the scanning path of S2, maintaining the spraying pen and the surface section of the base material at the same height, and performing three-dimensional comprehensive scanning along the surface of the base material at a constant speed; and the tantalum nitride film attached to the surface of the base material is annealed.
CN202110362659.1A 2021-04-02 2021-04-02 Device and method for preparing tantalum nitride film by precursor coating laser Active CN113073311B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JP2011060796A (en) * 2009-09-07 2011-03-24 Hitachi Zosen Corp Thin film depositing method and apparatus therefor
JP2011088799A (en) * 2009-10-26 2011-05-06 Mitsubishi Electric Corp Method of manufacturing semiconductor device and laser machining device
CN105803422A (en) * 2016-05-27 2016-07-27 洛阳理工学院 SiC film preparation device and method for preparing SiC film at low vacuum degree
CN105925961A (en) * 2016-05-12 2016-09-07 武汉理工大学 Laser chemical vapor deposition device for rapidly preparing multibasic oxide thin film
CN216663231U (en) * 2021-04-02 2022-06-03 泰杋科技股份有限公司 Device for preparing tantalum nitride film by coating laser on precursor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1395462A (en) * 2002-06-06 2003-02-05 华中科技大学 Electric circuit board production and its repairing method
JP2011060796A (en) * 2009-09-07 2011-03-24 Hitachi Zosen Corp Thin film depositing method and apparatus therefor
JP2011088799A (en) * 2009-10-26 2011-05-06 Mitsubishi Electric Corp Method of manufacturing semiconductor device and laser machining device
CN105925961A (en) * 2016-05-12 2016-09-07 武汉理工大学 Laser chemical vapor deposition device for rapidly preparing multibasic oxide thin film
CN105803422A (en) * 2016-05-27 2016-07-27 洛阳理工学院 SiC film preparation device and method for preparing SiC film at low vacuum degree
CN216663231U (en) * 2021-04-02 2022-06-03 泰杋科技股份有限公司 Device for preparing tantalum nitride film by coating laser on precursor

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