CN113071011A - Rod lifting method for reducing scratches on surface of silicon wafer - Google Patents
Rod lifting method for reducing scratches on surface of silicon wafer Download PDFInfo
- Publication number
- CN113071011A CN113071011A CN202110170727.4A CN202110170727A CN113071011A CN 113071011 A CN113071011 A CN 113071011A CN 202110170727 A CN202110170727 A CN 202110170727A CN 113071011 A CN113071011 A CN 113071011A
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- CN
- China
- Prior art keywords
- silicon wafer
- wire
- rod lifting
- lifting
- cutting
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 35
- 239000010703 silicon Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 25
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 32
- 239000010432 diamond Substances 0.000 claims abstract description 32
- 238000005520 cutting process Methods 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 claims description 13
- 239000000945 filler Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 abstract description 13
- 239000010959 steel Substances 0.000 abstract description 13
- 239000002173 cutting fluid Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 230000002411 adverse Effects 0.000 abstract 1
- 239000000498 cooling water Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a bar lifting method for reducing scratches on the surface of a silicon wafer, wherein the cut silicon wafer is gradually lifted to the position above a wire mesh by the upward operation of a longitudinal feeding system of a slicing machine, the wire mesh of diamond wires is kept in a speed range of 0.02M/S-0.1M/S for slow wiring in the whole bar lifting process, the bar lifting speed is set to be 10 mm/min-20 mm/min from the initial position of the bar lifting after cutting to the initial position of 20mm, and the bar lifting speed is set to be 40-60mm/min from the 20mm bar lifting position to the off-line of the silicon wafer lifting. The invention ensures that the diamond wire can be completely wetted by the cutting fluid under the slow-walking line member in the rod lifting process, and prevents the longitudinal drawing mark caused by the increase of the friction force of the steel wire in the middle of the silicon wafer in the rod lifting process; the wire-lifting rod is arranged to enable the wire roller to stably pull away the steel wire, and the wire breakage caused by the fact that pure longitudinal friction force between the silicon wafer and the steel wire pulls the steel wire in the direct rod-lifting process is avoided. Avoid the adverse effect on the quality and the cost.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon slice slicing, in particular to a rod lifting method for reducing scratches on the surface of a silicon slice.
Background
The single crystal slice uses diamond wire cutting, need lift off the crystal bar to gauze upper portion after the cutting finishes, prior art directly lifts the bar and directly lifts the diamond granule on the bar operation diamond wire on the one hand and produces vertical mar easily on the silicon chip surface, secondly lifts the bar in-process and produces great frictional force and easily leads to the copper wire to break, extravagant copper wire cost.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provides a rod lifting method for reducing scratches on the surface of a silicon wafer.
In order to achieve the purpose, the invention adopts the following technical scheme:
a rod lifting method for reducing scratches on the surface of a silicon wafer comprises the following steps:
the method comprises the following steps: the single crystal bar is connected with a slicing machine longitudinal feeding system through a plastic plate and a filler strip connecting plate, the crystal bar is arranged above a wire net during cutting, the slicing machine longitudinal feeding system moves downwards at a feeding speed set by a program, two slicing machine guide wheel main rollers are driven by an equipment motor to rotate, so that diamond wires between the two slicing machine guide wheel main rollers are driven to run in a forward and reverse direction, the cutting process from the crystal bar to a silicon wafer is completed through the diamond wires under the condition that cutting liquid is wetted, and after the whole cutting process is completed, the silicon wafer formed by cutting is completely arranged below the diamond wires.
Step two: and the cut silicon wafer is lifted upwards by a longitudinal feeding system of the slicing machine to gradually separate the cut silicon wafer above the wire mesh, the wire mesh of the diamond wire is kept in a speed range of 0.02M/S-0.1M/S to be slowly wired in the whole rod lifting process, the longitudinal rod lifting speed is set to be 10 mm/min-20 mm/min from the initial position of the rod lifting after cutting to the initial position of 20mm, and the longitudinal rod lifting speed is set to be 40-60mm/min from the position of the rod lifting 20mm to the position of the silicon wafer off-line mesh.
The invention has the following advantages:
1. the diamond wire can be completely wetted by the cutting fluid under the slow-walking line component in the rod lifting process, and the longitudinal drawing mark caused by the increase of too dry friction force of the steel wire in the middle of the silicon wafer in the rod lifting process is prevented.
2. The wire-lifting rod is arranged to enable the wire roller to stably pull away the steel wire, and the wire breakage caused by the fact that pure friction force between the silicon wafer and the steel wire pulls the steel wire in the direct rod-lifting process is avoided.
3. The one-way routing rod lifting is beneficial to wetting and bringing the steel wire into the silicon wafer, and plays a role in lubricating in the rod lifting process.
4. The wire moving speed is controlled within 0.1M/S, the linear speed is slow, so that the steel wire can not generate similar cutting effect due to the over-high linear speed to avoid the generation of transverse scratches.
Drawings
FIG. 1 is a schematic view of a wire bow of a diamond wire during rod lifting in the prior art;
FIG. 2 is a schematic view of a wire bow of a diamond wire as the rod is raised according to the present invention;
in the figure: 1. the slicing machine comprises a slicing machine guide wheel main roller, 2, a silicon wafer, 3, a plastic plate, a filler strip connecting plate, 4, a slicing machine longitudinal feeding system, 5, a cooling water cutting liquid guide plate, 6, a diamond wire and 7, and the rod lifting direction.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Cutting process: the single crystal bar is connected with a slicing machine longitudinal feeding system 4 through a plastic plate and a filler strip connecting plate 3, the crystal bar is arranged above a wire net during cutting, the slicing machine longitudinal feeding system 4 moves downwards according to a program set feeding speed, two slicing machine guide wheel main rollers 1 are driven by an equipment motor to rotate, so that diamond wires 6 between the two slicing machine guide wheel main rollers 1 are driven to run in a forward and reverse direction, the cutting process from a silicon ingot to a silicon wafer 2 is completed through the diamond wires 6 under the cutting liquid wetting condition, and after the whole cutting process is completed, the silicon wafer 2 formed by cutting is completely arranged below the wire net.
Rod lifting flow: the process that the cut silicon wafer 2 is moved upwards by the longitudinal feeding system 4 of the slicing machine and the silicon wafer 2 is gradually lifted above the diamond wire 6 is called a rod lifting process. Because the diamond wires 6 need to be reused, the direct rod lifting by cutting the wire mesh is not generally possible under the condition of higher cost. The initial position of the rod is lifted to a position 20mm above the diamond wire 6, the diamond wire 6 needs to pass through a plastic plate and a crystal bar chamfer, the plastic plate is easy to deviate in the cutting process of the softer diamond wire 6 to form a clamping wire, so that the clamping wire needs to be lifted at a slow speed, the clamping wire is processed in the process of slowly lifting the rod, after the lifting exceeds 20mm, the clamping wire is not easy to generate in a corresponding seam, the rod lifting speed is properly accelerated, and the lifting speed is not more than 60mm by considering the friction force between the steel wire and a silicon wafer. (excessive friction can cause the silicon chip to directly fall off from the adhesive layer of the adhesive plastic plate to form fragments, thus causing scrapping).
The 5 positions of cooling water cutting fluid guide plate aim at the juncture position of crystal bar and diamond wire 6, guarantee that diamond wire is fully moist.
The one-way wire-walking lifting rod drives the diamond wire 6 to walk in one direction through the two slicer guide wheel main rollers 1, and gradually lifts the crystal rod away from a wire net through verifying and stipulating the optimal wire speed and table speed setting.
In principle, the slower the speed is, the better the speed is, but in the case of a diamond wire 6, the slicer guide wheel main roller 1 is influenced by the tension of the diamond wire 6, when the speed is lower than 0.02M/S, the bearing is blocked, the surface scratches of the silicon wafer 2 are caused, different types of equipment have different bearing performances, the lowest linear speed of the equipment (the speed when the bearing is not blocked) is higher than 0.1M/S, and the probability of the scratches of the raised bars is obviously increased.
In fig. 1, in the original rod lifting process, the friction force is large, so that the wire bow of the diamond wire 6 is large, the diamond wire 6 is excessively drawn, and the cooling water cutting fluid cannot be brought into the interior of the diamond wire, so that longitudinal scratches are easily caused.
In the one-way wire-moving rod-lifting process shown in fig. 2, the wire roller rotates to drive the steel wire to provide a pulling force to resist the friction force between the steel wire and the silicon wafer, the wire bow is small, and meanwhile, cooling water cutting fluid is easily brought in to play a role in lubrication.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (1)
1. A rod lifting method for reducing scratches on the surface of a silicon wafer is characterized by comprising the following steps:
the method comprises the following steps: the single crystal bar is connected with a slicing machine longitudinal feeding system (4) through a plastic plate and a filler strip connecting plate (3), the crystal bar is arranged above a wire mesh during cutting, the slicing machine longitudinal feeding system (4) moves downwards at a feeding speed set according to a program, two slicing machine guide wheel main rollers (1) are driven by an equipment motor to rotate, so that diamond wires (6) between the two slicing machine guide wheel main rollers (1) are driven to run in a forward and reverse direction, the cutting process from the crystal bar to the silicon wafer (2) is completed through the diamond wires (6) under the condition that cutting liquid is wetted, and the silicon wafer (2) formed by cutting is completely arranged below the diamond wires (6) after the whole cutting process is completed;
step two: and the cut silicon wafer is lifted upwards by a longitudinal feeding system of the slicing machine to gradually separate the cut silicon wafer above the wire mesh, the wire mesh of the diamond wire is kept in a speed range of 0.02M/S-0.1M/S to be slowly wired in the whole rod lifting process, the longitudinal rod lifting speed is set to be 10 mm/min-20 mm/min from the initial position of the rod lifting after cutting to the initial position of 20mm, and the longitudinal rod lifting speed is set to be 40-60mm/min from the position of the rod lifting 20mm to the position of the silicon wafer off-line mesh.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110170727.4A CN113071011A (en) | 2021-02-08 | 2021-02-08 | Rod lifting method for reducing scratches on surface of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110170727.4A CN113071011A (en) | 2021-02-08 | 2021-02-08 | Rod lifting method for reducing scratches on surface of silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113071011A true CN113071011A (en) | 2021-07-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110170727.4A Pending CN113071011A (en) | 2021-02-08 | 2021-02-08 | Rod lifting method for reducing scratches on surface of silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113071011A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113752402A (en) * | 2021-09-16 | 2021-12-07 | 广东金湾高景太阳能科技有限公司 | Method for solving scratch bright line of large-size silicon wafer lifting material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101217132B1 (en) * | 2012-07-19 | 2012-12-31 | 이화다이아몬드공업 주식회사 | Apparatus and method for slicing silicon ingot |
| CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
| CN109304819A (en) * | 2018-11-27 | 2019-02-05 | 扬州荣德新能源科技有限公司 | A kind of crystalline silicon blocks high efficiency cutting method |
| CN109664425A (en) * | 2019-02-01 | 2019-04-23 | 江苏吉星新材料有限公司 | A kind of lower machine method after sapphire substrate sheet slice |
| CN112078038A (en) * | 2020-07-30 | 2020-12-15 | 长治高测新材料科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
-
2021
- 2021-02-08 CN CN202110170727.4A patent/CN113071011A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101217132B1 (en) * | 2012-07-19 | 2012-12-31 | 이화다이아몬드공업 주식회사 | Apparatus and method for slicing silicon ingot |
| CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
| CN109304819A (en) * | 2018-11-27 | 2019-02-05 | 扬州荣德新能源科技有限公司 | A kind of crystalline silicon blocks high efficiency cutting method |
| CN109664425A (en) * | 2019-02-01 | 2019-04-23 | 江苏吉星新材料有限公司 | A kind of lower machine method after sapphire substrate sheet slice |
| CN112078038A (en) * | 2020-07-30 | 2020-12-15 | 长治高测新材料科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113752402A (en) * | 2021-09-16 | 2021-12-07 | 广东金湾高景太阳能科技有限公司 | Method for solving scratch bright line of large-size silicon wafer lifting material |
| CN113752402B (en) * | 2021-09-16 | 2022-07-12 | 广东金湾高景太阳能科技有限公司 | Method for solving scratch bright line of large-size silicon wafer lifting material |
| WO2023040739A1 (en) * | 2021-09-16 | 2023-03-23 | 广东金湾高景太阳能科技有限公司 | Method for solving scratches and bright lines in large-size silicon wafers when material lifting |
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| CB02 | Change of applicant information | ||
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Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Applicant after: BAOTOU MEIKE SILICON ENERGY Co.,Ltd. Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant before: Jiangsu Meike Solar Energy Technology Co.,Ltd. Applicant before: BAOTOU MEIKE SILICON ENERGY Co.,Ltd. |
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20210706 |