CN113055328B - BPSK modulation circuit based on low-power backscattering amplification label and method thereof - Google Patents
BPSK modulation circuit based on low-power backscattering amplification label and method thereof Download PDFInfo
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- CN113055328B CN113055328B CN202110170408.3A CN202110170408A CN113055328B CN 113055328 B CN113055328 B CN 113055328B CN 202110170408 A CN202110170408 A CN 202110170408A CN 113055328 B CN113055328 B CN 113055328B
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- H04L27/00—Modulated-carrier systems
- H04L27/18—Phase-modulated carrier systems, i.e. using phase-shift keying
- H04L27/20—Modulator circuits; Transmitter circuits
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Abstract
The invention discloses a BPSK modulation circuit based on a low-power consumption backscattering amplification label and a method thereof, wherein the circuit comprises an antenna, the low-power consumption backscattering amplification label and a bias voltage switching module, wherein the antenna is used for receiving an incident excitation signal; the bias voltage switching module is used for providing different bias voltages; the low-power consumption backscattering amplification label is respectively connected with the antenna and the bias voltage switching module and is used for amplifying the incident excitation signal according to different bias voltages and outputting a scattering signal; the antenna is also used for sending the scattering signal. According to the invention, the bias voltage switching module switches and supplies power to the low-power-consumption backscattering amplification label, and the impedance presented by the low-power-consumption backscattering amplification label under different bias voltages is different, so that the phase information of the scattering coefficient of the low-power-consumption backscattering amplification label is changed to realize BPSK modulation, and the circuit is simple to realize.
Description
Technical Field
The invention belongs to the technical field of wireless communication, and particularly relates to a BPSK modulation circuit based on a low-power backscattering amplification label and a method thereof.
Background
In passive RFID systems, where the antenna induces a current through an incoming radio frequency signal, it provides sufficient power to drive the integrated circuit on the tag and respond, using a technique known as backscatter modulation. Therefore, the antenna must be designed to be able to collect power from the incoming signal and send out the backscattered signal.
In the present RFID, generally, a gain-free backscatter tag and a simple LC circuit are used to perform phase modulation of a backscatter signal, which is the simplest and practical method, and the requirements of low power consumption and low complexity are well satisfied, but the operability of the circuit and instability of the phase modulation and the transmission distance are also problems to be faced. The multi-stage phase modulation is realized by using the control circuit capable of phase shifting, and the stability of signals and the order of the modulation can be effectively improved.
However, the power consumption of the conventional phase shift control circuit is increased greatly, and the complexity of the circuit is further improved. In the development of a large-scale internet of things, the power consumption and complexity of a backscattering tag with gain and a complex phase modulation circuit only affect the landing of an actual product, and the active or semi-active backscattering tag with gain can cause that the energy consumption only rises and does not fall.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a BPSK modulation circuit based on a low power consumption backscattering amplification tag.
One embodiment of the present invention provides a BPSK modulation circuit based on a low power consumption backscattering amplification tag, including:
comprises an antenna, a low-power consumption backscattering amplification label and a bias voltage switching module, wherein,
the antenna is used for receiving an incident excitation signal;
the bias voltage switching module is used for providing different bias voltages;
the low-power consumption backscattering amplification label is respectively connected with the antenna and the bias voltage switching module and is used for amplifying the incident excitation signal according to different bias voltages and outputting a scattering signal;
the antenna is also used for sending the scattering signal.
In one embodiment of the invention, the low power consumption backscatter amplification tag comprises a capacitor C1, a capacitor C2, an inductor L, a tunnel diode D, wherein,
one end of the capacitor C1 is connected to the antenna, the other end of the capacitor C1 is connected to one end of the inductor L and the anode of the tunnel diode D, the other end of the inductor L is connected to one end of the capacitor C2 and the bias voltage switching module, and the other end of the capacitor C2 and the cathode of the tunnel diode D are both grounded.
In one embodiment of the present invention, the tunnel diode D is a GI307A tunnel diode.
In an embodiment of the present invention, the bias voltage switching module is implemented by a single chip microcomputer including a DAC module.
In one embodiment of the invention, the bias voltage V i The scattering coefficient of the lower low-power backscattering amplification label is expressed as follows:
wherein Z is Li Representing a bias voltage V i Lower load impedance, Z, as seen from the antenna port to the low power backscatter amplifier tag A Representing the antenna impedance, R Li Representing the bias voltage V i Real part of tag load impedance, R, is amplified by low power consumption backscattering A Representing the real part of the antenna impedance,
representing the conjugate impedance of the antenna.
One embodiment of the present invention provides a BPSK modulation method based on a low-power backscattering amplification tag, including:
the bias voltage switching module provides a plurality of bias voltages;
measuring the scattering coefficients of the low-power-consumption backscattering amplifying tags under the bias voltages, wherein the incident excitation signals received by the antenna are amplified by the low-power-consumption backscattering amplifying tags to obtain the low-power-consumption backscattering amplifying tags;
determining a first bias voltage and a second bias voltage according to the scattering coefficients of the low-power-consumption backscattering amplification labels;
and switching power supply to the low-power-consumption backscattering amplification label according to the first bias voltage and the second bias voltage to output a scattering signal, and transmitting the scattering signal by an antenna to realize BPSK modulation.
In one embodiment of the invention, the determining the first bias voltage and the second bias voltage according to the scattering coefficients of the plurality of low-power backscatter amplification tags comprises:
calculating a first scattering gain and a first scattering coefficient phase value according to the scattering coefficients of the low-power backscattering amplification labels;
calculating a second scattering gain and a second scattering coefficient phase value according to the scattering coefficients of the low-power backscattering amplification labels;
determining the first bias voltage and the second bias voltage in response to the first scattering gain and the second scattering gain being equal and the first scattering coefficient phase value and the second scattering coefficient phase value being 180 ° out of phase.
In one embodiment of the present invention, the first scattering gain and the first scattering coefficient phase value are calculated according to the scattering coefficients of the plurality of low power consumption backscattering amplification labels, and are expressed as:
wherein, gamma is 1 Representing the bias voltage V 1 Scattering coefficient, Z, of the tag is amplified by low power consumption backscattering L1 Representing the bias voltage V 1 Lower load impedance viewed from the antenna port to the low power backscatter amplification tag, | Γ 1 I denotes the first scattering gain, θ 1 Representing the first scattering coefficient phase value.
In an embodiment of the present invention, the second scattering gain and the second scattering coefficient phase value are calculated according to the scattering coefficients of the plurality of low power consumption backscatter amplification tags, and are expressed as:
wherein, gamma is 2 Representing the bias voltage V 2 Scattering coefficient, Z, of the tag is amplified by low power consumption backscattering L2 Representing a bias voltage V 2 Lower load impedance viewed from the antenna port to the low power backscatter amplification tag, | Γ 2 I denotes the second scattering gain, θ 2 Representing the second scattering coefficient phase value.
In one embodiment of the invention, the bias voltage V j The scattered signal transmitted by the lower antenna is represented as:
S bj (t)＝S(t)*Γ j ,j＝0,1；
wherein S is bj (t) represents a bias voltage V j The scattered signal transmitted by the lower antenna, S (t) representing the incident excitation signal received by the antenna, Γ j Representing a bias voltage V j And the scattering coefficient of the label is amplified through backscattering with low power consumption.
Compared with the prior art, the invention has the beneficial effects that:
according to the BPSK modulation circuit based on the low-power-consumption backscattering amplification tag, the bias voltage switching module switches the low-power-consumption backscattering amplification tag to supply power, and the different impedances presented by the low-power-consumption backscattering amplification tag under different bias voltages are utilized, so that the phase information of the scattering coefficient of the low-power-consumption backscattering amplification tag is changed to realize BPSK modulation, and the circuit is simple to realize.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a BPSK modulation circuit based on a low-power backscattering amplification tag according to an embodiment of the present invention;
fig. 2 is a schematic circuit structure diagram of a low-power backscattering amplification tag in a BPSK modulation circuit based on the low-power backscattering amplification tag according to the embodiment of the present invention;
fig. 3 is a schematic view of a current-voltage characteristic curve of a tunnel diode GI307A in a low-power backscatter amplification tag according to an embodiment of the invention;
fig. 4 is a schematic flowchart of a BPSK modulation method based on a low-power backscattering amplification tag according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of phase information of a scattering coefficient of a low-power backscattering amplification tag provided by an embodiment of the invention under a bias voltage of 90 mv;
FIG. 6 is a schematic diagram of phase information of a scattering coefficient of a low-power backscattering amplification tag with a bias voltage of 100mv according to an embodiment of the present invention;
fig. 7 is a schematic diagram illustrating scattering gain variation of a low-power backscattering amplification tag under different bias voltages according to an embodiment of the present invention;
fig. 8 is a schematic view of a scattering gain of a low-power backscattering amplification tag finally measured by a BPSK modulation method based on the low-power backscattering amplification tag according to the embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of a BPSK modulation circuit based on a low-power backscattering amplification tag according to an embodiment of the present invention. The embodiment provides a BPSK modulation circuit based on a low-power backscattering amplification tag, which comprises an antenna, the low-power backscattering amplification tag and a bias voltage switching module.
Specifically, this embodiment BPSK modulation circuit includes that low-power consumption backscattering enlargies label, bias voltage switches module and antenna, specifically: the bias voltage switching module is used for providing different bias voltages to control the different bias voltages to supply power to the low-power-consumption backscattering amplification label; the low-power consumption backscattering amplification label is used for amplifying and scattering an incident excitation signal with lower power consumption, the specific bias voltage switching module enables the low-power consumption backscattering amplification label to present different impedances under different bias voltages, phase information of a scattering coefficient of the low-power consumption backscattering amplification label is changed, so that the phase information of the incident excitation signal is changed, and then the low-power consumption backscattering amplification label performs phase modulation and backscattering on the incident excitation signal; the antenna is used for receiving an incident excitation signal and sending out a scattering signal modulated by the low-power-consumption backscattering amplification label.
Preferably, the bias voltage switching module is implemented by a single chip microcomputer including a DAC module.
Referring to fig. 2, fig. 2 is a schematic circuit structure diagram of a low power consumption backscatter amplification tag in a BPSK modulation circuit based on the low power consumption backscatter amplification tag according to an embodiment of the present invention, where the low power consumption backscatter amplification tag includes a capacitor C1, a capacitor C2, an inductor L, and a tunnel diode D, where one end of the capacitor C1 is connected to an antenna, the other end of the capacitor C1 is connected to one end of the inductor L and an anode of the tunnel diode D, the other end of the inductor L is connected to one end of the capacitor C2 and a bias voltage switching module, and the other end of the capacitor C2 and a cathode of the tunnel diode D are both grounded. The tunnel diode D in this embodiment may be a GI307A tunnel diode.
Specifically, in the low power consumption backscatter amplification tag of this embodiment, the inductor L is used to isolate the incident excitation signal from the dc bias and prevent the voltage surge caused by the dc bias, the capacitor C2 is used to stabilize the dc bias voltage and prevent the incident excitation signal from affecting the dc bias, the tunnel diode D is used to amplify and reflect the incident excitation signal by using its quantum tunneling effect, and the capacitor C1 is used to change the operating frequency range of the low power consumption backscatter amplification tag according to the value of the capacitor C1, that is, to perform the function of frequency selection.
Further, the low-power consumption backscatter amplification tag of the embodiment is realized based on the tunneling effect of the tunnel diode, and different from the conventional tag, the low-power consumption backscatter amplification tag using the tunnel diode D can amplify an incident excitation signal with extremely low power consumption and then scatter the incident excitation signal. The tunnel diode D is characterized in that under a certain bias voltage, the tunnel diode D exhibits a negative resistance characteristic, that is, a characteristic that a current decreases as the voltage increases. Referring to fig. 3, fig. 3 is a schematic view of a current-voltage characteristic curve of a tunnel diode GI307A in the low power consumption backscatter amplification tag according to the embodiment of the present invention, in which a certain bias voltage is applied to the tunnel diode GI307A to make the tunnel diode GI307 present a negative impedance, and the length of an inductor L, a capacitor C1, and a microstrip line, which is a medium for transmitting radio frequency signals, is adjusted by an impedance matching network to change a frequency value amplified by the low power consumption backscatter amplification tag according to actual needs. Tunnel diode shown by fig. 3The voltammogram of the tube GI307A shows that the bias voltage required for the low power consumption backscatter amplification tag is about 100mV, and the required current is less than 1mA, so that the power consumption of the low power consumption backscatter amplification tag can be reduced to the μ w level. And based on the negative impedance provided by the tunnel diode D, the absolute value of the reflection coefficient of the low-power-consumption backscatter amplification tag can be larger than 1, so that the scattering gain of the low-power-consumption backscatter amplification tag is larger than 1. In particular, the tunnel diode D impedance Z can be configured by configuring the load impedance L And an antenna impedance Z A Complete match, i.e. Z A ＝-Z L . Then, the present embodiment is at the bias voltage V i The scattering coefficient calculation of the low-power backscattering amplification label is expressed as follows:
wherein Z is Li Representing the bias voltage V i Lower load impedance, Z, as seen from the antenna port to the low power backscatter amplifier tag A Representing the antenna impedance, R Li Representing a bias voltage V i Low power consumption backscatter amplification tag load impedance real part, R A Representing the real part of the antenna impedance,
representing the conjugate impedance of the antenna. Therefore, when the tag antenna impedance Z Li When it is negative impedance, the bias voltage V of this embodiment i The scattering gain of the lower low power backscatter amplification tag is expressed as:
this embodiment passes through the tunnel diode D impedance Z L And an antenna impedance Z A The matching network selects the proper real part R of the antenna impedance A To obtain any scattering gain. When R is A ＝R Li When the dispersion gain becomes infinite, the device oscillates.
In summary, in the BPSK modulation circuit based on the low-power-consumption backscatter amplification tag provided in this embodiment, the bias voltage switching module switches and supplies power to the low-power-consumption backscatter amplification tag, and the impedance presented by the low-power-consumption backscatter amplification tag under different bias voltages is different, so that phase information of a scattering coefficient of the low-power-consumption backscatter amplification tag is changed to implement BPSK modulation, a modulation rate can reach 100Kbps, a scattering gain can reach about 40db, a scattered signal can be amplified under the advantage of maintaining low power consumption at a tag end, and a communication distance of backscatter can be effectively increased.
Example two
On the basis of the first embodiment, please refer to fig. 4, and fig. 4 is a flowchart illustrating a BPSK modulation method based on a low-power backscattering amplification tag according to an embodiment of the present invention. The embodiment provides a BPSK modulation method based on a low-power backscattering amplification tag, which is implemented based on the BPSK modulation circuit based on the low-power backscattering amplification tag in the first embodiment, and specifically includes the following steps:
Specifically, the bias voltage switching module of this embodiment outputs a plurality of different bias voltages through the DAC module of the single chip microcomputer, so as to supply power to the low-power-consumption backscatter amplification tag under different bias voltages.
And 2, measuring the scattering coefficients of the low-power-consumption backscattering amplification labels obtained by amplifying the incident excitation signals received by the antenna by the low-power-consumption backscattering amplification labels under a plurality of bias voltages.
Specifically, in this embodiment, after the bias voltage switching module provides different bias voltages for the low-power-consumption backscatter amplification tag, the low-power-consumption backscatter amplification tag amplifies the incident excitation signal under different bias voltages and outputs different scattering coefficients, and specifically, the scattering coefficients of the low-power-consumption backscatter amplification tags are obtained through formula (1).
And 3, determining a first bias voltage and a second bias voltage according to the scattering coefficients of the low-power-consumption backscattering amplification labels.
Specifically, in this embodiment, the scattering coefficients of a plurality of low-power-consumption backscatter amplification tags are obtained through formula (1), and a scattering coefficient that meets a preset condition is selected from the scattering coefficients of the low-power-consumption backscatter amplification tags, so that BPSK modulation is implemented. The embodiment that the selecting the scattering coefficient meeting the preset condition to determine the first bias voltage and the second bias voltage according to the scattering coefficients of the plurality of low-power-consumption backscattering amplification labels specifically includes:
and 3.1, calculating a first scattering gain and a first scattering coefficient phase value according to the scattering coefficients of the low-power backscattering amplification labels.
Specifically, in the present embodiment, the first scattering gain and the first scattering coefficient phase value are calculated according to the scattering coefficients of the low-power backscatter amplification tags, and are expressed as:
wherein, gamma is 1 Representing the bias voltage V 1 Scattering coefficient, Z, of the tag is amplified by low power consumption backscattering L1 Representing the bias voltage V 1 Lower load impedance viewed from the antenna port to the low power backscatter amplification tag, | Γ 1 I denotes the first scattering gain, θ 1 Representing the first scattering coefficient phase value.
And 3.2, calculating a second scattering gain and a second scattering coefficient phase value according to the scattering coefficients of the low-power backscattering amplification labels.
Specifically, in this embodiment, the second scattering gain and the second scattering coefficient phase value are calculated according to the scattering coefficients of the low-power backscatter amplification tags, and are expressed as:
wherein, gamma is 2 Representing the bias voltage V 2 Scattering coefficient, Z, of the tag is amplified by low power consumption backscattering L2 Representing the bias voltage V 2 Lower load impedance viewed from antenna port to low power backscatter amplification tag, | Γ 2 I denotes the second scattering gain, θ 2 Representing the second scattering coefficient phase value.
And 3.3, responding to the condition that the first scattering gain and the second scattering gain are equal and the phase difference between the phase value of the first scattering coefficient and the phase value of the second scattering coefficient is 180 degrees, and determining a first bias voltage and a second bias voltage.
Specifically, in this embodiment, the bias voltages V selected in step 3.1 and step 3.2 are respectively 1 And a bias voltage V 2 In the following, it is required to satisfy that the first scattering gain and the second scattering gain are equal, and the phase difference between the phase value of the first scattering coefficient and the phase value of the second scattering coefficient is 180 °, that is, the first scattering gain | Γ 1 | and a second scattering gain | Γ 2 | satisfy | Γ | 1 |＝|Γ 2 L (or approximately equal), and a first scattering coefficient phase value θ 1 And a second scattering coefficient phase value theta 2 Satisfies | theta 1 -θ 2 180 ° so that the phase of the scattered signal is shifted by 180 ° at different bias voltages, thereby realizing BPSK modulation.
And 4, switching power supply to the low-power-consumption backscattering amplification label to output a scattering signal according to the first bias voltage and the second bias voltage, and transmitting the scattering signal by an antenna to realize BPSK modulation.
Specifically, in this embodiment, a set of required bias voltages, that is, a first bias voltage and a second bias voltage, is determined by measuring phase values of scattering gain and reflection coefficient of the low-power-consumption backscatter amplification tag under different bias voltages, then the low-power-consumption backscatter amplification tag is switched and powered by the bias voltage switching module and outputs a scattering signal, and the antenna transmits the scattering signal j The scattered signal transmitted by the lower antenna is represented as:
S bj (t)＝S(t)*Γ j ,j＝0,1 (5)
wherein S is bj (t) represents a bias voltage V j The scattered signal transmitted by the lower antenna, S (t) representing the incident excitation signal received by the antenna, Γ j Representing the bias voltage V j And the scattering coefficient of the label is amplified through backscattering with low power consumption.
It should be noted that, in this embodiment, BPSK modulation may be implemented not only by switching one set of bias voltages to the low-power-consumption backscatter amplification tag to supply power, but also by switching multiple sets of bias voltages to the low-power-consumption backscatter amplification tag to supply power to implement QPSK modulation or 16QAM modulation.
Referring to fig. 5, fig. 6, fig. 7, and fig. 8, fig. 5 is a schematic diagram of phase information of a scattering coefficient of a low-power backscattering amplification tag at a bias voltage of 90mv according to an embodiment of the present invention, fig. 6 is a schematic diagram of phase information of a scattering coefficient of a low-power backscattering amplification tag at a bias voltage of 100mv according to an embodiment of the present invention, fig. 7 is a schematic diagram of variation of scattering gain of a low-power backscattering amplification tag at different bias voltages according to an embodiment of the present invention, and fig. 8 is a schematic diagram of finally measured scattering gain of a low-power backscattering amplification tag based on a BPSK modulation method of a low-power backscattering amplification tag according to an embodiment of the present invention. As can be seen from fig. 5 and 6, the bias voltage is switched to supply power to the low-power-consumption backscatter amplification tag, when the bias voltage is 90mv, the phase of the scattering coefficient of the low-power-consumption backscatter amplification tag is-152 °, when the bias voltage is 100mv, the phase of the scattering coefficient of the low-power-consumption backscatter amplification tag is 26 °, and the phase difference between the two is approximately 180 °. The bias voltage is 90mv and the bias voltage is 100mv, so that the amplitude of the scattering coefficient of the low-power-consumption backscattering amplification label is basically unchanged, and the phase value of the scattering coefficient is 180 degrees different; it can be seen from fig. 7 that a set of bias voltage values can be found under different bias voltages, so that the gains of the low-power backscatter amplification tags are approximately the same; as can be seen from fig. 8, at an input power of-50 dbm of the incident excitation signal, there is a gain of 46.6dB at a frequency of 440MHz, so that BPSK modulation at a modulation rate of 100Kbps can be achieved.
The BPSK modulation method based on the low-power backscattering amplification tag provided in this embodiment may be implemented in the BPSK modulation circuit embodiment based on the low-power backscattering amplification tag in the first embodiment, and an implementation principle and a technical effect of the BPSK modulation method based on the low-power backscattering amplification tag are similar to each other, and are not described herein again.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (8)
1. A BPSK modulation circuit based on a low-power consumption backscattering amplification label is characterized by comprising an antenna, a low-power consumption backscattering amplification label and a bias voltage switching module, wherein,
the antenna is used for receiving an incident excitation signal;
the bias voltage switching module is used for providing different bias voltages;
the low-power consumption backscattering amplification label is respectively connected with the antenna and the bias voltage switching module and is used for amplifying the incident excitation signal according to different bias voltages and outputting a scattering signal;
the antenna is also used for sending the scattering signal;
the bias voltage comprises 90mV and 100 mV;
bias voltage V i The scattering coefficient of the lower low-power backscattering amplification label is expressed as:
wherein Z is Li Representing the bias voltage V i Lower load impedance, Z, as seen from the antenna port to the low power backscatter amplifier tag A Indicating antenna resistanceAnti, R Li Representing the bias voltage V i Real part of tag load impedance, R, is amplified by low power consumption backscattering A Representing the real part of the antenna impedance,
representing the conjugate impedance of the antenna;
the low-power backscattering amplifying tag comprises a capacitor C1, a capacitor C2, an inductor L and a tunnel diode D, wherein,
one end of the capacitor C1 is connected to the antenna, the other end of the capacitor C1 is connected to one end of the inductor L and the anode of the tunnel diode D, the other end of the inductor L is connected to one end of the capacitor C2 and the bias voltage switching module, and the other end of the capacitor C2 and the cathode of the tunnel diode D are both grounded.
2. The BPSK modulation circuit based on low power backscattering amplification tag of claim 1, wherein the tunnel diode D is a GI307A tunnel diode.
3. The BPSK modulation circuit based on the low-power backscattering amplification tag according to claim 1, wherein the bias voltage switching module is implemented by a single chip microcomputer including a DAC module.
4. A BPSK modulation method based on a low-power backscattering amplification label is characterized by comprising the following steps:
the bias voltage switching module provides a plurality of bias voltages;
measuring the scattering coefficients of the low-power-consumption backscattering amplification labels obtained by amplifying the incident excitation signals received by the antenna by the low-power-consumption backscattering amplification labels under the bias voltages;
determining a first bias voltage and a second bias voltage according to the scattering coefficients of the low-power-consumption backscattering amplification labels;
switching power supply to the low-power backscattering amplification label according to the first bias voltage and the second bias voltage to output a scattering signal, and transmitting the scattering signal by an antenna to realize BPSK modulation;
the bias voltages comprise 90mV and 100 mV;
bias voltage V i The scattering coefficient of the lower low-power backscattering amplification label is expressed as:
wherein Z is Li Representing the bias voltage V i Lower load impedance, Z, as seen from the antenna port to the low power backscatter amplifier tag A Denotes the antenna impedance, R Li Representing the bias voltage V i Real part of tag load impedance, R, is amplified by low power consumption backscattering A Representing the real part of the impedance of the antenna,
representing the conjugate impedance of the antenna;
the low-power backscattering amplifying tag comprises a capacitor C1, a capacitor C2, an inductor L and a tunnel diode D, wherein,
one end of the capacitor C1 is connected to the antenna, the other end of the capacitor C1 is connected to one end of the inductor L and the anode of the tunnel diode D, the other end of the inductor L is connected to one end of the capacitor C2 and the bias voltage switching module, and the other end of the capacitor C2 and the cathode of the tunnel diode D are both grounded.
5. The BPSK modulation method based on the low-power backscattering amplification labels according to claim 4, wherein determining the first bias voltage and the second bias voltage according to the scattering coefficients of the plurality of low-power backscattering amplification labels comprises:
calculating a first scattering gain and a first scattering coefficient phase value according to the scattering coefficients of the low-power backscattering amplification labels;
calculating a second scattering gain and a second scattering coefficient phase value according to the scattering coefficients of the low-power backscattering amplification labels;
determining the first bias voltage and the second bias voltage in response to the first scattering gain and the second scattering gain being equal and the first scattering coefficient phase value and the second scattering coefficient phase value being 180 ° out of phase.
6. The BPSK modulation method based on low-power backscattering amplification labels as recited in claim 5, wherein the calculation of the first scattering gain and the first scattering coefficient phase value from the scattering coefficients of the plurality of low-power backscattering amplification labels is expressed as:
wherein, gamma is 1 Representing the bias voltage V 1 Scattering coefficient, Z, of the tag is amplified by low power consumption backscattering L1 Representing the bias voltage V 1 Lower load impedance viewed from the antenna port to the low power backscatter amplification tag, | Γ 1 I denotes the first scattering gain, θ 1 Representing the first scattering coefficient phase value.
7. The BPSK modulation method based on low-power backscattering amplification labels according to claim 6, wherein calculating a second scattering gain and a second scattering coefficient phase value from the scattering coefficients of the plurality of low-power backscattering amplification labels is represented as:
wherein, gamma is 2 Representing the bias voltage V 2 Low power consumption backscatter amplification tag scattering coefficient, Z L2 Representing a bias voltage V 2 When viewed from an antenna port to a low-power backscattering amplification labelLoad impedance, | Γ | 2 I denotes the second scattering gain, θ 2 Representing the second scattering coefficient phase value.
8. The BPSK modulation method based on low-power backscattering amplification labels as claimed in claim 7, wherein the bias voltage V is j The scattered signal transmitted by the lower antenna is represented as:
S bj (t)＝S(t)*Γ j ,j＝0,1；
wherein S is bj (t) represents a bias voltage V j The scattered signal transmitted by the lower antenna, S (t) representing the incident excitation signal received by the antenna, Γ j Representing a bias voltage V j And the scattering coefficient of the label is amplified through backscattering with low power consumption.
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