CN113054066B - Display panel and display device - Google Patents
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- CN113054066B CN113054066B CN202110269914.8A CN202110269914A CN113054066B CN 113054066 B CN113054066 B CN 113054066B CN 202110269914 A CN202110269914 A CN 202110269914A CN 113054066 B CN113054066 B CN 113054066B
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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Abstract
The invention discloses a display panel and a display device, comprising: a first light emitting chip and a second light emitting chip; the first light emitting chip includes: the first light-emitting part emits red light, the second light-emitting part emits blue light, and the second light-emitting chip emits green light; the first light-emitting chip emits red light and blue light simultaneously, so that the red light-emitting chip in the prior art is replaced, the problem of low light-emitting efficiency of the red light-emitting chip can be avoided, and the power consumption of the display panel is effectively reduced.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a display device.
Background
The Light-Emitting Diode (LED) display technology refers to image display implemented by using an LED as a Light-Emitting device. The LED has the self-luminous characteristic, so that a backlight module is not required to be arranged, the display device is simplified, and the thickness of the display device is reduced. The LED also has the advantages of all solid state, long service life, high brightness, low power consumption, small size and the like, thereby having better development prospect.
The micro light emitting diode refers to a light emitting diode micro and matrixing technology, and a high-density micro-sized light emitting diode array is integrated on a chip, so that the size of the light emitting chip is reduced to a micrometer level. The micro light emitting diode can be applied to a small-sized display device while having the same advantages of the LED display technology.
However, since the red led is limited by the epitaxial material, the lattice vibration is severe, and the surface has a large recombination rate, so that the non-radiative recombination is increased, and the efficiency of the red chip is low, which cannot meet the display requirement.
Disclosure of Invention
The embodiment of the invention provides a display panel and a display device, which can effectively reduce the power consumption of the display panel.
In a first aspect, an embodiment of the present invention provides a display panel, including: a first light emitting chip and a second light emitting chip; wherein,
the first light-emitting chip comprises a first light-emitting part and a second light-emitting part, the first light-emitting part emits red light, and the second light-emitting part emits blue light; the second light emitting chip emits green light.
In some embodiments of the present invention, the first light emitting chip further comprises:
and the first light shielding part is positioned between the first light emitting part and the second light emitting part and is connected with the first light emitting part and the second light emitting part.
In some embodiments of the present invention, a width of the first light exiting portion in a first direction is equal to a width of the second light exiting portion in the first direction; the width of the first light shielding part in a first direction is smaller than that of the first light emergent part in the first direction; the first direction is perpendicular to a connecting line of center points of the first light emitting part and the second light emitting part.
In some embodiments of the present invention, the first light emitting chip comprises:
a blue light emitting diode chip;
the color conversion layer is positioned on the light emitting side of the blue light emitting diode chip; the color conversion layer is arranged in the first light emergent part; the color conversion layer is used for emitting red light under the excitation of blue light;
the light shielding layer is positioned on the light emitting side of the blue light emitting diode chip; the light shielding layer is arranged in the first light shielding part.
In some embodiments of the present invention, the first light emitting chip comprises:
a substrate;
a buffer layer on one side of the substrate;
the first semiconductor layer is positioned on one side, away from the substrate, of the buffer layer; the orthographic projection of the first semiconductor layer on the substrate is superposed with the orthographic projection of the first light-emitting part, the second light-emitting part and the first light-shielding part on the substrate;
the second semiconductor layer is positioned on one side of the first semiconductor layer body layer, which is far away from the buffer layer; the orthographic projection of the second semiconductor layer on the substrate is superposed with the orthographic projection of the first light-emitting part and the second light-emitting part on the substrate;
the first electrode is positioned on one side, away from the buffer layer, of the first semiconductor layer; the orthographic projection of the first electrode on the substrate is positioned in the orthographic projection of the first light shading part on the substrate, and the orthographic projection of the first electrode on the substrate and the orthographic projection of the first light emergent part and the orthographic projection of the second light emergent part on the substrate do not overlap; and
the second electrode is positioned on one side, away from the first semiconductor layer, of the second semiconductor layer; the orthographic projection of the second electrode on the substrate is superposed with the orthographic projection of the first light-emitting part and the second light-emitting part on the substrate;
the color conversion layer is positioned on one side, away from the buffer layer, of the substrate, and the orthographic projection of the color conversion layer on the substrate is superposed with the orthographic projection of the first light emergent part on the substrate;
the light shielding layer is located on one side, away from the buffer layer, of the substrate, and the orthographic projection of the light shielding layer on the substrate coincides with the orthographic projection of the first light shielding portion on the substrate.
In some embodiments of the present invention, the first light emitting chip further comprises:
a multi-quantum well layer between the first semiconductor layer and the second semiconductor layer; and the orthographic projection of the multi-quantum well layer on the substrate is superposed with the orthographic projection of the first light-emitting part and the second light-emitting part on the substrate.
In some embodiments of the invention, the color conversion layer is a quantum dot layer.
In some embodiments of the present invention, the second light emitting chip includes a third light emitting portion, a fourth light emitting portion, and a second light shielding portion located between the third light emitting portion and the fourth light emitting portion, and the third light emitting portion and the fourth light emitting portion emit green light.
In some embodiments of the present invention, the first light emitting chip and the second light emitting chip are each less than 500 μm in size.
In a second aspect, an embodiment of the invention provides a display device, including any one of the display panels described above.
The invention provides a display panel and a display device, comprising a plurality of pixel units, wherein each pixel unit comprises: a first light emitting chip and a second light emitting chip; the first light emitting chip includes: the first light-emitting part emits red light, the second light-emitting part emits blue light, and the second light-emitting chip emits green light; the first light-emitting chip emits red light and blue light simultaneously, so that the red light-emitting chip in the prior art is replaced, the problem of low light-emitting efficiency of the red light-emitting chip can be avoided, and the power consumption of the display panel is effectively reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a diagram showing the test results of the luminous efficiency of three-color LEDs of different models;
FIG. 2 is a diagram showing the test results of the luminous efficiency of a red LED chip varying with temperature;
FIG. 3 is a partial top view of a display panel according to an embodiment of the present invention;
fig. 4 is a schematic top view of a pixel unit according to an embodiment of the invention;
fig. 5 is a schematic cross-sectional structure diagram of a first light emitting chip according to an embodiment of the present invention;
fig. 6 is a schematic partial cross-sectional structure diagram of a display panel according to an embodiment of the present invention;
fig. 7 is a second partial top view of the display panel according to the embodiment of the invention.
The LED array substrate comprises 200-an array substrate, 10-a first light emitting chip, 20-a second light emitting chip, 101-a first light emitting layer, 102-a second light emitting layer, 103-a first light shading layer, 201-a third light emitting layer, 202-a fourth light emitting layer, 203-a second light shading layer, 11-a blue light emitting diode chip, 12-a color conversion layer, 13-a light shading layer, 111-a substrate, 112-a buffer layer, 113-a first semiconductor layer, 114-a multi-quantum well layer, 115-a second semiconductor layer, 116-a first electrode, 117-a second electrode, a p-pixel unit, e 1-a first connecting electrode and e 2-a second connecting electrode.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, the present invention is further described with reference to the accompanying drawings and examples. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their repetitive description will be omitted. The words indicating positions and directions in the present invention are illustrated by way of example in the accompanying drawings, but may be changed as required and are within the scope of the present invention. The drawings of the present invention are for illustrative purposes only and do not represent true scale.
The Light-Emitting Diode (LED) display technology refers to image display implemented by using an LED as a Light-Emitting device. The LED has self-luminous characteristic, so that a backlight module is not required to be arranged, the display device is simplified, and the thickness of the display device is reduced. The LED also has the advantages of all solid state, long service life, high brightness, low power consumption, small size and the like, thereby having better development prospect.
The present LED display panel usually uses red, green, and blue LEDs for image display, and in the embodiment of the present invention, the luminance of the display panel is 2000nit, the packaging transmittance is 60%, and the light energy ratio of the red LEDs, the green LEDs, and the blue LEDs is 3:6:1, the pixel aperture ratio is 2% as a reference, the luminous efficiency of three-color light emitting diodes with different models and specifications is tested, and the test result is shown in fig. 1 and the following table:
wherein R in the above table represents a red light emitting diode, G represents a green light emitting diode, and B represents a blue light emitting diode. The abscissa of fig. 1 is current density and the ordinate is luminous efficiency; in fig. 1, curve 1 represents the current density and luminous efficiency relationship curve of the green led, curve 2 represents the current density and luminous efficiency relationship curve of the blue led, and curve 3 represents the current density and luminous efficiency relationship curve of the red led.
As can be seen from fig. 1 and the above table, the light emitting efficiency of the red light emitting diode is lower than that of the green light emitting diode and the blue light emitting diode. The current density required for driving the red light emitting diode is larger and is 5 times or more of that of the green light emitting diode or the blue light emitting diode, so that the power consumption of the red light emitting diode is increased, because the red light emitting diode is limited by the epitaxial wafer material, the lattice vibration is severe, the surface has a larger recombination rate, the non-radiative recombination is increased, the emission efficiency of the red light emitting diode is lower, and the power consumption of the display panel is increased.
On the other hand, the embodiment of the present invention further performs a test study on the luminous efficiency of the red light emitting diode at different temperatures, and the results are shown in fig. 2 and the following table:
the abscissa of fig. 2 is temperature and the ordinate is luminous efficiency; wherein, the dotted line represents the curve of the luminous efficiency of the red light emitting diode changing with the temperature, and the solid line represents the curve of the luminous efficiency of the blue light emitting diode changing with the temperature.
As can be seen from fig. 2, the blue led has insignificant variation of light emitting efficiency with temperature, good stability, and high light emitting efficiency. The luminous efficiency of the red light emitting diode decreases sharply with the increase of the temperature. As shown in the above table, when the temperature reaches 38 ℃, the luminous efficiency of the red light emitting diode decreases by 28%, and when the temperature reaches 50 ℃, the luminous efficiency of the red light emitting diode decreases by about 40%.
However, the temperature of the conventional display panel reaches about 50 ℃ during normal display, so that the luminous efficiency of the red light emitting diode is seriously reduced, normal display cannot be realized, and the display image quality is seriously influenced. Further, when a white screen is displayed, the white balance is also abnormal due to the abnormality of red, and it is necessary to increase the drive current of the red light emitting diode to compensate for the luminance of red, thereby increasing the power consumption of the display panel.
In view of this, in order to improve the stability of the red led and reduce the power consumption of the display panel, the embodiment of the invention provides a light emitting chip to replace the red led chip, so as to improve the light emitting efficiency of the light emitting chip and reduce the power consumption of the display panel.
Fig. 3 is a partial top view of a display panel according to an embodiment of the invention.
Referring to fig. 3, the display panel includes: the pixel units p are arranged in an array. Wherein each pixel cell p comprises: a first light emitting chip 10 and a second light emitting chip 20.
Fig. 4 is a schematic top view of a pixel unit according to an embodiment of the invention.
Referring to fig. 4, the first light emitting chip 10 includes: a first light emitting portion 101 and a second light emitting portion 102. The first light emitting part 101 emits red light, the second light emitting part 102 emits blue light, and the second light emitting chip emits green light.
The embodiment of the invention adopts the first light-emitting chip to emit the red light and the blue light simultaneously, thereby replacing the red light-emitting chip in the prior art, avoiding the problem of low light-emitting efficiency of the red light-emitting chip and effectively reducing the power consumption of the display panel.
Fig. 5 is a schematic cross-sectional structure diagram of a first light emitting chip according to an embodiment of the present invention.
Specifically, referring to fig. 5, the first light emitting chip includes: a blue light emitting diode chip 11 and a color conversion layer 12. The color conversion layer 12 is located on the light emitting side of the blue led chip 11, and the color conversion layer 12 is disposed in the first light emitting portion 101; the color conversion layer 12 is for emitting red light under excitation of blue light.
In the embodiment of the present invention, a blue light emitting diode chip 11 is adopted to emit blue light, and a first light emitting portion 101 and a second light emitting portion 102 are disposed on the blue light emitting diode chip 11, wherein a color conversion layer 12 is disposed in the first light emitting portion 101, the blue light emitted from the blue light emitting diode chip 11 excites the color conversion layer 12 and then emits red light, and the second light emitting portion 102 directly transmits the blue light, thereby two colors of light can be emitted on one light emitting chip.
Because the blue led chip 11 has good stability and high light emitting efficiency, the blue led chip is provided with the first light emitting portion and the second light emitting portion to replace the red led and the blue led, so that many defects of the red led can be avoided, and the power consumption of the display panel can be reduced.
In specific implementation, the color conversion layer 12 may be a quantum dot layer, the quantum dot layer has red quantum dots wrapped by a thin film, and the red quantum dots wrapped by the thin film can effectively isolate water and oxygen, thereby ensuring the stability of the quantum dots. The red quantum dots emit red light under excitation of blue light emitted from the blue light emitting diode chip 11. In addition, the color conversion layer 12 may also be a fluorescent layer including a fluorescent material stimulated to emit red light, the fluorescent material emitting red light under excitation of blue light emitted from the blue light emitting diode chip 11, and the color conversion layer 12 may also be another color conversion layer, which is not limited herein.
The embodiment of the invention compares the relevant parameters of a red light-emitting diode chip, a green light-emitting diode chip, a blue light-emitting diode chip, a red light-emitting chip adopting a quantum dot layer for color conversion and a green light-emitting chip adopting the quantum dot layer for color conversion, and the comparison result is shown in the following table:
as shown in the above table, compared with the scheme that the red led chip, the green led chip, and the blue led chip are used, after the red led chip is replaced with the red led chip that performs color conversion by using the quantum dot layer, the color coordinate is increased from 0.690 to 0.704, the color gamut under various standards is improved, and the light emitting efficiency is improved from 17.3 to 21.8. However, after the green led chip is replaced with a green led chip that performs color conversion by using a quantum dot layer, the color coordinate is reduced from 0.749 to 0.676, the color gamut under various standards is reduced, and the luminous efficiency is reduced from 266.0 to 50.2.
Therefore, the scheme of the red light-emitting chip which adopts the blue light-emitting diode, the green light-emitting diode and the quantum dot layer for color conversion can effectively improve the light-emitting efficiency and simultaneously can improve the color gamut.
In view of the above, the embodiment of the invention uses the first light emitting chip emitting red light and blue light simultaneously and the second light emitting chip emitting green light in one pixel unit for image display.
Further, as shown in fig. 4, the first light emitting chip 10 further includes a first light shielding portion 103, and the first light shielding portion 103 is located between the first light emitting portion 101 and the second light emitting portion 102 and connects the first light emitting portion 101 and the second light emitting portion 102. The first light-shielding portion 103 functions to prevent light from exiting between the first light-exiting portion 101 and the second light-exiting portion 102, thereby causing crosstalk between lights of two colors. The first light-shielding portion 103 is provided between the first light-emitting portion 101 and the second light-emitting portion 102, and the first light-emitting portion 101 can emit only red light and the second light-emitting portion 102 can emit only blue light, thereby improving the display effect.
Specifically, the first light-emitting portion 101 and the second light-emitting portion 102 provided in the embodiment of the present invention have the same structural size, and as shown in fig. 4, the width of the first light-emitting portion 101 in the first direction y is equal to the width of the second light-emitting portion 102 in the first direction y, and the width of the first light-shielding portion 103 in the first direction y is smaller than the width of the first light-emitting portion 101 in the first direction y; the first direction y is perpendicular to a connection line ii between center points of the first light emitting portion 101 and the second light emitting portion 102.
Specifically, referring to fig. 5, the blue light emitting diode chip 11 includes: a substrate 111, a buffer layer 112, a first semiconductor layer 113, a multi-quantum well layer 114, a second semiconductor layer 115, a first electrode 116, and a second electrode 117.
The size and dimensions of the substrate 111 are adapted to the size and dimensions of the blue led chip 11, and in the implementation of the present invention, the substrate 111 is a sapphire substrate.
The buffer layer 112 is located on one side of the substrate 111, and has a shape and size consistent with those of the substrate 111, and in the implementation of the present invention, the buffer layer 112 is made of gallium nitride.
The first semiconductor layer 113 is located on a side of the buffer layer 112 away from the substrate 111, an orthogonal projection of the first semiconductor layer 113 on the substrate 111 coincides with an orthogonal projection of the first light emitting portion 101, the second light emitting portion 102, and the first light shielding portion 103 on the substrate 111 in fig. 4.
The mqw layer 114 is located on a side of the first semiconductor layer 113 away from the buffer layer 112, and an orthogonal projection of the mqw layer 114 on the substrate 111 coincides with an orthogonal projection of the first light emitting portion 101 and the second light emitting portion 102 on the substrate 111 in fig. 4. The multiple quantum well layer 114 can optimize the device structure of the light emitting diode, which is beneficial to improving the light emitting efficiency.
And a second semiconductor layer 115 on a side of the mqw layer 114 away from the first semiconductor layer 113, wherein an orthogonal projection of the second semiconductor layer 115 coincides with an orthogonal projection of the first light-emitting portion 101 and the second light-emitting portion 102 on the substrate 111 in fig. 4. In the implementation of the present invention, the material used for the first semiconductor layer 113 is P-type gallium nitride.
The first electrode 116 is located on a side of the first semiconductor layer 113 away from the buffer layer 112, an orthogonal projection of the first electrode 116 on the substrate 111 is located within an orthogonal projection of the first light shielding portion 103 on the substrate 111, and the orthogonal projection of the first electrode 116 on the substrate 111 and orthogonal projections of the first light emitting portion 101 and the second light emitting portion 102 on the substrate 111 do not overlap with each other.
The second electrode 117 is located on the side of the second half layer 115 facing away from the mqw layer 114, and an orthogonal projection of the second electrode 117 on the substrate 111 coincides with an orthogonal projection of the first light-emitting portion 101 and the second light-emitting portion 102 on the substrate 111 in fig. 4.
The color conversion layer 12 is located on a side of the substrate 111 away from the buffer layer 112, the color conversion layer 12 is disposed in the first light emitting portion 101 in fig. 4, and an orthographic projection of the color conversion layer 12 on the substrate 111 coincides with an orthographic projection of the first light emitting portion 101 on the substrate 111. The color conversion layer 12 is for emitting red light under excitation of blue light.
The first light emitting chip provided by the embodiment of the invention further comprises: and a light-shielding layer 13.
The light-shielding layer 13 is located on the side of the substrate 111 away from the buffer layer 112, and the light-shielding layer 13 is disposed inside the first light-shielding portion 103, and an orthogonal projection of the light-shielding layer 13 on the substrate 111 coincides with an orthogonal projection of the first light-shielding portion 103 on the substrate 111 in fig. 4.
The light shielding layer 13 functions to prevent light from being emitted between the first light emitting portion 101 and the second light emitting portion 102, and to prevent crosstalk between the first light emitting portion 101 and the second light emitting portion 102.
In the present embodiment, the material used for the light-shielding layer 13 is black resin.
Fig. 6 is a schematic partial cross-sectional structure diagram of a display panel according to an embodiment of the present invention.
As shown in fig. 6, in the specific implementation process, the first light emitting chip 10 is die-bonded on the array substrate 200, and the first light emitting chip 10 includes a first electrode 116 and two second electrodes 117. Accordingly, the array substrate 200 includes one first connection electrode e1 and two second connection electrodes e2 for one first light emitting chip 10, the first electrode 116 of the first light emitting chip 10 is welded to the first connection electrode e1 of the array substrate 200, and the two second electrodes 117 of the first light emitting chip 10 are welded to the two second connection electrodes e2 of the array substrate, respectively. By applying different electrical signals to the two second connecting electrodes e2 and applying a set electrical signal to the first connecting electrode e1, the brightness difference between the red light and the blue light emitted from the first light-emitting chip 10 can be controlled, that is, the brightness of the red light and the blue light emitted from the first light-emitting chip structure provided by the embodiment of the invention can be controlled respectively.
In the embodiment of the present invention, as shown in fig. 4, the second light emitting chip 20 may directly adopt a green light emitting diode chip, and the specific structure thereof may be the same as that of the green light emitting diode chip in the prior art. Thus, only one light-emitting chip in the pixel unit needs to be structurally improved.
In another practical manner, as shown in fig. 7, the second light emitting chip 20 provided by the embodiment of the present invention includes: a third light emitting portion 201, a fourth light emitting portion 202, and a second light shielding portion 203 located between the third light emitting portion 201 and the fourth light emitting portion 202, wherein the third light emitting portion 201 and the fourth light emitting portion 202 each emit green light.
The second light emitting chip 20 in fig. 7 may still adopt a green light emitting diode chip, but the structure thereof needs to be improved, and the specific structure may refer to the structure of the first light emitting chip shown in fig. 5, and only the corresponding film layer material needs to be replaced by the material required by the green light emitting diode chip.
When the green light emitting diode chip has the structure shown in fig. 7, the third light emitting part 201 and the fourth light emitting part 202 emit green light directly without providing a film layer for converting another color, and a second light shielding part 203 is provided between the third light emitting part 201 and the fourth light emitting part 202 so that the second light emitting chip 20 corresponds to the first light emitting chip 10.
Therefore, one pixel unit can be regarded as comprising four sub-pixels, wherein two green sub-pixels are included, and the display brightness of the whole display panel is improved by increasing the light emitting area of the green light due to the fact that the display brightness of the green light is relatively high.
In the embodiment of the present invention, the power of the display panel using the first light emitting chip 10 and the second light emitting chip 20 is tested, and the test results are shown in the following table:
as can be seen from the above table, compared with the scheme that the red led chip, the green led chip, and the blue led chip are used, after the red led chip is replaced with the red led chip that performs color conversion by using the quantum dot layer, when the display panel displays the maximum gray scale, the maximum power is reduced from 50.0W to 39.6W, which results in that the maximum power is reduced from 55.4W to 39.6W if the brightness attenuation factor of the red led chip is taken into consideration without considering the brightness attenuation of the red led chip.
The first light emitting chip 10 and the second light emitting chip 20 provided by the embodiment of the invention are both micro light emitting diode chips, the micro light emitting diode chips are different from common light emitting diode chips, and the size of the micro light emitting diode chips is very small, and in the embodiment of the invention, the size of the micro light emitting diode is below 500 μm.
It should be noted that the current display panel is difficult to achieve high ppi due to the limitation of the die transfer technology. In the display panel provided by the embodiment of the invention, only two light-emitting chips are needed in one pixel unit to realize color image display, and compared with the scheme in the prior art that three-color light-emitting chips are needed to perform color image display, the use number of the light-emitting chips can be reduced, so that the size pressure of multiple die bonding can be reduced, and the possibility is provided for high ppi.
For example, the minimum size of the electrodes of the light emitting chips is 40 × 60 μm, the distance between the chips during die bonding transfer is 75 μm, and the error caused by die bonding is 5 μm. If the minimum width of the pixel unit is (40 +75+ 5) × 3=360 μm when the three-color light emitting chip is used, and if the first and second light emitting chips provided by the embodiments of the present invention are used, the minimum width of the pixel unit is (40 +75+ 5) × 2=240 μm, that is, the minimum width of the pixel unit can be reduced by 1/3, more pixel units can be disposed in a limited space, thereby improving the display ppi.
Based on the same inventive concept, an embodiment of the present invention further provides a display device, including the display panel provided in any of the embodiments. Since the principle of solving the problem of the display device is similar to that of the display panel, the implementation of the display device can be referred to the implementation of the display panel, and repeated descriptions are omitted.
The display panel and the display device provided by the embodiment of the invention comprise a plurality of pixel units, wherein each pixel unit comprises: a first light emitting chip and a second light emitting chip; the first light emitting chip includes: the first light-emitting part emits red light, the second light-emitting part emits blue light, and the second light-emitting chip emits green light; the first light-emitting chip emits red light and blue light simultaneously, so that the red light-emitting chip in the prior art is replaced, the problem of low light-emitting efficiency of the red light-emitting chip can be avoided, and the power consumption of the display panel is effectively reduced.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A display panel, comprising: a first light emitting chip and a second light emitting chip; wherein,
the first light emitting chip comprises a first light emitting part and a second light emitting part, the first light emitting part emits red light, and the second light emitting part emits blue light; the second light emitting chip emits green light.
2. The display panel of claim 1, wherein the first light emitting chip further comprises:
and a first light shielding part positioned between the first light emitting part and the second light emitting part, wherein the first light shielding part is connected with the first light emitting part and the second light emitting part.
3. The display panel according to claim 2, wherein a width of the first light emission portion in a first direction is equal to a width of the second light emission portion in the first direction; the width of the first light shielding part in a first direction is smaller than that of the first light emergent part in the first direction; the first direction is perpendicular to a connecting line of center points of the first light emitting part and the second light emitting part.
4. The display panel according to claim 3, wherein the first light emitting chip comprises:
a blue light emitting diode chip;
the color conversion layer is positioned on the light emitting side of the blue light emitting diode chip; the color conversion layer is arranged in the first light emergent part; the color conversion layer is used for emitting red light under excitation of blue light;
the light shielding layer is positioned on the light emitting side of the blue light emitting diode chip; the light shielding layer is arranged in the first light shielding part.
5. The display panel according to claim 4, wherein the first light emitting chip comprises:
a substrate;
a buffer layer on one side of the substrate;
the first semiconductor layer is positioned on one side, away from the substrate, of the buffer layer; an orthographic projection of the first semiconductor layer on the substrate is superposed with an orthographic projection of the first light emergent portion, the second light emergent portion and the first light shielding portion on the substrate;
the second semiconductor layer is positioned on one side of the first semiconductor layer body layer, which is far away from the buffer layer; the orthographic projection of the second semiconductor layer on the substrate is superposed with the orthographic projection of the first light-emitting part and the second light-emitting part on the substrate;
the first electrode is positioned on one side, away from the buffer layer, of the first semiconductor layer; the orthographic projection of the first electrode on the substrate is positioned in the orthographic projection of the first light shading part on the substrate, and the orthographic projection of the first electrode on the substrate and the orthographic projection of the first light emergent part and the orthographic projection of the second light emergent part on the substrate are not overlapped with each other; and
the second electrode is positioned on one side, away from the first semiconductor layer, of the second semiconductor layer; the orthographic projection of the second electrode on the substrate is superposed with the orthographic projection of the first light-emitting part and the second light-emitting part on the substrate;
the color conversion layer is positioned on one side, away from the buffer layer, of the substrate, and the orthographic projection of the color conversion layer on the substrate is overlapped with the orthographic projection of the first light emergent part on the substrate;
the light shielding layer is located on one side, away from the buffer layer, of the substrate, and the orthographic projection of the light shielding layer on the substrate is overlapped with the orthographic projection of the first light shielding portion on the substrate.
6. The display panel of claim 5, wherein the first light emitting chip further comprises:
a multi-quantum well layer between the first semiconductor layer and the second semiconductor layer; and the orthographic projection of the multi-quantum well layer on the substrate is superposed with the orthographic projection of the first light emergent part and the second light emergent part on the substrate.
7. A display panel as claimed in any one of claims 4 to 6 characterized in that the color conversion layer is a quantum dot layer or a phosphor conversion layer.
8. The display panel according to any one of claims 1 to 6, wherein the second light emitting chip includes a third light emitting portion, a fourth light emitting portion, and a second light shielding portion located between the third light emitting portion and the fourth light emitting portion, and each of the third light emitting portion and the fourth light emitting portion emits green light.
9. The display panel according to claim 5 or 6, wherein the first light emitting chip and the second light emitting chip each have a size of less than 500 μm.
10. A display device characterized by comprising the display panel according to any one of claims 1 to 9.
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| CN101026210A (en) * | 2006-02-24 | 2007-08-29 | 方础光电科技股份有限公司 | Semiconductor chip package structure and its package method |
| CN110720144A (en) * | 2017-09-29 | 2020-01-21 | 首尔半导体株式会社 | Light emitting element and display device having the same |
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| CN101026210A (en) * | 2006-02-24 | 2007-08-29 | 方础光电科技股份有限公司 | Semiconductor chip package structure and its package method |
| CN110720144A (en) * | 2017-09-29 | 2020-01-21 | 首尔半导体株式会社 | Light emitting element and display device having the same |
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