CN113054051A - Detection device, preparation method thereof, photoelectric sensor and display device - Google Patents
Detection device, preparation method thereof, photoelectric sensor and display device Download PDFInfo
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- CN113054051A CN113054051A CN202110257175.0A CN202110257175A CN113054051A CN 113054051 A CN113054051 A CN 113054051A CN 202110257175 A CN202110257175 A CN 202110257175A CN 113054051 A CN113054051 A CN 113054051A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides a detection device and a preparation method thereof, a photoelectric sensor and a display device, and relates to the technical field of photoelectric detection, wherein the detection device comprises: a substrate; a thin film transistor disposed on the substrate, the thin film transistor including an active layer; a quantum dot layer disposed on a side of the thin film transistor remote from the substrate, the quantum dot layer being in contact with the active layer; the thin film transistor is configured to generate a current signal when the quantum dot layer receives light of a corresponding wavelength band. The detector of the invention has high sensitivity and is beneficial to realizing a larger detection spectrum range.
Description
Technical Field
The invention relates to the technical field of display, in particular to a detection device, a preparation method thereof, a photoelectric sensor and a display device.
Background
A photodetector is a sensor for detecting light, and has wide applications in various fields of military and national economy. For example, in the visible or near infrared band, it is mainly used for radiation measurement and detection, industrial automation, photometry, and the like; the infrared band is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing and the like.
However, the conventional photodetector has the problems of low sensitivity, limited detection spectral range and the like.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a detection device, a preparation method thereof, a photoelectric sensor and a display device.
In order to achieve the above object, the present invention provides a detection device, comprising:
a substrate;
a thin film transistor disposed on the substrate, the thin film transistor including an active layer;
a quantum dot layer disposed on a side of the thin film transistor remote from the substrate, the quantum dot layer being in contact with the active layer;
the thin film transistor is configured to generate a current signal when the quantum dot layer receives light of a corresponding wavelength band.
Optionally, the thin film transistor includes:
a gate electrode disposed on the substrate;
a gate insulating layer covering the gate electrode;
the source electrode and the drain electrode are arranged on one side, far away from the substrate, of the grid insulating layer;
the active layer comprises a source electrode connecting part, a drain electrode connecting part and a channel part located between the source electrode connecting part and the drain electrode connecting part, the source electrode connecting part is connected with the source electrode, the drain electrode connecting part is connected with the drain electrode, and the quantum dot layer is in contact with the channel part.
Optionally, the quantum dot layer has a thickness of
To
In the meantime.
Optionally, the material of the active layer comprises an amorphous oxide or a crystalline oxide.
The present invention also provides a photoelectric sensor, including: a judgment module and at least one detection device;
the judging module is connected with the detecting device and configured to determine the wave band of the light irradiated to the detecting device according to a current signal generated by the detecting device.
Optionally, the photoelectric sensor includes a plurality of the detecting devices, different detecting devices generate electric current signals under irradiation of light rays with different wave bands, and the magnitude of the electric current generated by different detecting devices is different.
Optionally, the plurality of detection devices comprises a plurality of first detection devices;
the grid electrode of the thin film transistor in the first detection device is connected with a first power supply end, the first pole of the thin film transistor in the first detection device is connected with a second power supply end, and the second pole of the thin film transistor in the first detection device is connected with the judgment module;
wherein a voltage of the first power source terminal is less than a turn-on voltage of the thin film transistor in the first detection device.
Optionally, the plurality of detection devices further includes at least one second detection device, a gate of a thin film transistor in the second detection device is connected to the first power supply terminal, a first pole of the thin film transistor in the second detection device is connected to the second power supply terminal, and a second pole of the thin film transistor in the second detection device is connected to the determination module; wherein a voltage of the first power source terminal is less than a turn-on voltage of a thin film transistor in the second detection device;
the photoelectric sensor further comprises a gating module, wherein the gating module is connected between the plurality of first detection devices and the judgment module, and the gating module is configured to respond to a control signal and control the plurality of first detection devices and the judgment module to be connected or disconnected.
The invention also provides a display device, which comprises the photoelectric sensor.
The invention also provides a preparation method of the detection device, which comprises the following steps:
forming a thin film transistor on a substrate, the thin film transistor including an active layer;
forming a quantum dot material layer on one side of the active layer far away from the substrate;
and carrying out laser annealing on the quantum dot material layer to form a quantum dot layer.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a detection device provided by an embodiment of the present invention;
FIG. 2 is a schematic diagram of a current signal generated by a detection device according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a photosensor according to an embodiment of the present invention;
fig. 4 is a second schematic diagram of a photoelectric sensor according to an embodiment of the present invention;
fig. 5 is a flowchart of a method for manufacturing a detection device according to an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
Unless otherwise defined, technical or scientific terms used in the embodiments of the present invention should have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. Likewise, the word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
An embodiment of the present invention provides a detection device, and fig. 1 is a schematic diagram of the detection device provided in the embodiment of the present invention, as shown in fig. 1, the detection device includes: a substrate 11, a thin film transistor T, and a quantum dot layer 13. Wherein, the thin film transistor T is arranged on the substrate 11, the thin film transistor T comprises an active layer 121, the quantum dot layer 13 is arranged on the side of the thin film transistor T far away from the substrate 11, and the quantum dot layer 13 is in contact with the active layer 121. The thin film transistor T is configured to generate a current signal when the quantum dot layer 13 receives light of a corresponding wavelength band.
In the embodiment of the present invention, the substrate 11 may be a flexible substrate or a rigid substrate, a material of the flexible substrate may include Polyimide (PI), and a material of the rigid substrate may include glass. The material of the quantum dot layer 13 may include selenide chalcogenides, such as lead selenide (PbSe), cadmium selenide (CdSe), zinc selenide (ZnSe), and the like, and alternatively, the material of the quantum dot layer 13 of the embodiment of the present invention employs cadmium selenide (CdSe). The band gap of the quantum dot layer 13 may be set to 0ev to 2.2 ev. The thin film transistor T may have a top gate structure or a bottom gate structure, and optionally, the thin film transistor T of the embodiment of the present invention may have a bottom gate structure.
In the embodiment of the present invention, the corresponding bands refer to: enabling the sensing device to generate a band of current signals. The respective wavelength bands may include one or more of an infrared wavelength band, a red wavelength band, a green wavelength band, a blue wavelength band, and an ultraviolet wavelength band, for example, when the respective wavelength bands include one wavelength band, the detecting device may generate a light emitting current upon receiving only light of the infrared wavelength band; when the corresponding wavelength band includes a plurality of wavelength bands, the detecting device may be capable of generating the current signal when receiving light of at least two of the above wavelength bands.
When light of a corresponding wavelength band is irradiated to the quantum dot layer 13, the quantum dot layer 13 absorbs photons to generate electron-hole pairs, electrons generated in the quantum dot layer 13 can be transferred to the active layer 121 of the thin film transistor T, so that the electron concentration of the active layer 121 is changed, and when the electron concentration of the active layer 121 reaches a certain level, the thin film transistor T can generate a current signal. When light beams of different wavelength bands are irradiated to the quantum dot layer 13, the number of electron-hole pairs generated by the quantum dot layer 13 is different, so that the variation degree of the electron concentration of the active layer 121 is different, and the magnitude of the current signal generated by the thin film transistor T is also different. Therefore, when the detection device is applied to the photoelectric sensor, the wave band of the light irradiated on the detection device can be determined by judging the magnitude of the current signal generated by the detection device.
By adopting the detection device of the embodiment of the invention, the quantum dot layer 13 with high sensitivity is matched with the active layer 121 to generate a current signal, so that the interface traps are few, and the sensitivity is high; in addition, the photoelectric sensor adopting the detection device of the embodiment of the invention can realize detection from an infrared light wave band to an ultraviolet light wave band, so that the detection device of the embodiment of the invention is beneficial to realizing a larger detection spectrum range.
As shown in fig. 1, the thin film transistor T further includes: a gate electrode 122, a gate insulating layer 123, a source electrode 124a, a drain electrode 124b, and an active layer 121. The gate 122 is disposed on the substrate 11, the gate insulating layer 123 covers the gate 122, and the source 124a, the drain 124b, and the active layer 121 are disposed on a side of the gate insulating layer 123 away from the substrate 11. The active layer 121 includes a source electrode connection portion connected to the source electrode 124a, a drain electrode connection portion connected to the drain electrode 124b, and a channel portion between the source and drain electrode connection portions, and the quantum dot layer 13 is in contact with the channel portion.
In an embodiment of the present invention, the material of the gate electrode 122 may include a metal, such as molybdenum (Mo), copper (Cu), aluminum (Al), and the like. The material of the gate insulating layer 123 may be a silicon oxide (SiO) material, a silicon nitride (SiON) material, or a silicon oxynitride (SiON), or a combination of the above three materials, or the like. The thickness of the gate insulating layer 123 may be set at
To
In some embodiments, the quantum dot layer 13 has a thickness of
To
Thereby reducing the thickness of the quantum dot layer 13 as much as possible without affecting the generation of effective electron-hole pairs in the quantum dot layer 13.
In some embodiments, the material of the active layer 121 includes an amorphous metal oxide or a crystalline metal oxide, and the metal oxide may include, for example, Indium Gallium Zinc Oxide (IGZO), Indium Zinc Oxide (IZO), Indium Gallium Zinc Y Oxide (IGZYO), and the like, and optionally, the material of the quantum dot layer 13 of the embodiment of the present invention adopts amorphous indium gallium zinc oxide (a-IGZO).
Fig. 2 is a schematic diagram of a current signal generated by a detection device according to an embodiment of the present invention, and as shown in fig. 2, the magnitude of the current signal generated by the detection device increases as the wavelength of light irradiated to the detection device decreases. Specifically, when the irradiation light is infrared light, the current signal generated by the detection device is minimum, and the size of the current signal is close to 10 pA; when the irradiation light is ultraviolet light, the current signal generated by the detection device is maximum, and the size of the current signal is close to 15 muA.
The embodiment of the present invention further provides a photoelectric sensor, fig. 3 is one of schematic diagrams of the photoelectric sensor provided in the embodiment of the present invention, and as shown in fig. 3, the photoelectric sensor includes: a judging module 2 and at least one detecting device 1 as described above. The judgment module 2 is connected to the detection device 1 and configured to determine a wavelength band of light irradiated to the detection device 1 according to a current signal generated by the detection device 1.
In an embodiment of the present invention, the photosensor may comprise one or more detection devices 1. As shown in fig. 2, when the photoelectric sensor includes one detection device 1, the wavelength band corresponding to the detection device 1 may include a plurality of wavelength bands, and when light of different wavelength bands is irradiated to the detection device 1, the magnitude of the current signal generated by the detection device 1 is different. For example, the wavelength bands corresponding to the detection device 1 may include five wavelength bands of an infrared band ir, a red light band r, a green light band g, a blue light band b, and an ultraviolet light band uv. When infrared light is irradiated to the detection device 1, the magnitude of a current signal generated by the detection device 1 is Iir; when the red light irradiates the detection device 1, the size of a current signal generated by the detection device 1 is Ir; when green light irradiates the detection device 1, the detection device 1 generates a current signal with the magnitude Ig; when blue light irradiates the detection device 1, the magnitude of a current signal generated by the detection device 1 is Ib; when the ultraviolet light is irradiated to the detection device 1, the detection device 1 generates a current signal having a magnitude of Iuv. The wave band of the light can be detected by detecting the magnitude of the current signal.
Fig. 4 is a second schematic diagram of the photoelectric sensor according to the embodiment of the present invention, as shown in fig. 4, when the photoelectric sensor includes a plurality of detecting devices 1, different detecting devices 1 generate electric current signals under the irradiation of light in different wavelength bands, and the electric currents generated by different detecting devices 1 are different in magnitude. For example, the photoelectric sensor may include five detection devices 1 that generate current signals under irradiation of light of five wavelength bands, i.e., an infrared band ir, a red band r, a green band g, a blue band b, and an ultraviolet band uv, respectively. When infrared light irradiates to the five detection devices, a first detection device 1 in the five detection devices generates a current signal, and the magnitude of the current signal is Iir; when the red light irradiates the five detection devices 1, a second detection device 1 in the five detection devices 1 generates a current signal, and the magnitude of the current signal is Ir; when green light is irradiated to the five detection devices 1, a third detection device 1 of the five detection devices 1 generates a current signal, and the magnitude of the current signal is Ig; when blue light irradiates the five detection devices 1, a fourth detection device 1 in the five detection devices 1 generates a current signal, and the magnitude of the current signal is Ib; when ultraviolet light is irradiated to the five detection devices 1, a current signal is generated by the fifth detection device 1 of the five detection devices 1, and the magnitude of the current signal is Iuv.
The judgment module 2 can determine the wave band of the light irradiated to the detection device 1 according to the magnitude of the detected current signal and a preset current signal-wave band mapping relationship. For example, when the magnitude of the current signal detected by the determining module 2 is Ig, the determining module 2 may determine that the wavelength band of the light irradiated to the detecting device 1 is a green wavelength band according to a preset current signal-wavelength band mapping relationship. The determination manner of the determination module 2 for other bands may be the same as that of the green band, and is not described herein again.
The photoelectric sensor provided by the embodiment of the invention has the advantages that the sensitivity of the adopted detection device is high, the detection can be realized from the infrared light wave band to the ultraviolet light wave band by using the detection device, and the detection spectral range is larger.
In some embodiments, when the photoelectric sensor includes a plurality of detection devices 1, the plurality of detection devices 1 may be connected in parallel, and the detection of the wavelength band of light may also be achieved by determining the sum of the currents output by the plurality of detection devices, for example, when red light and green light are irradiated to five detection devices 1, the second detection device 1 generates a current signal with a magnitude of Ir, the third detection device 1 generates a current signal with a magnitude of Ig, and at this time, the sum It of the current signals output by the five detection devices 1 is Ir + Ig, so that It may be determined that the irradiated light is red light and green light; when green light and blue light are irradiated to the five detection devices 1, the third detection device 1 generates a current signal having a magnitude Ig, the fourth detection device 1 generates a current signal having a magnitude Ib, and at this time, the sum It of the current signals output from the five detection devices 1 is Ig + Ib, whereby It can be determined that the irradiated light is green light and blue light.
In some embodiments, the plurality of sensing devices 1 includes a plurality of first sensing devices 1 a. The gate of the thin film transistor T in the first detection device 1a is connected to the first power source terminal VG, the first pole of the thin film transistor T in the first detection device 1a is connected to the second power source terminal VDD, and the second pole of the thin film transistor T in the first detection device 1a is connected to the determination module 2. The voltage of the first power source terminal VG is less than the turn-on voltage of the thin film transistor T. In the embodiment of the present invention, the first power source terminal VG can provide an initial voltage value to the gate of the thin film transistor T, and when the light of the corresponding wavelength band is irradiated to the first detection device 1a, the current concentration of the thin film transistor T in the first detection device 1a is turned on with a small change, and a current signal is generated, so that the thin film transistor T has a fast response speed.
In the embodiment of the present invention, one of the first pole and the second pole of the thin film transistor T is a source, and the other is a drain.
In some embodiments, the plurality of sensing devices 1 further includes at least one second sensing device 1b, a gate of the thin film transistor T in the second sensing device 1b is connected to the first power source terminal VG, a first pole of the thin film transistor T in the second sensing device 1b is connected to the second power source terminal VDD, and a second pole of the thin film transistor T in the second sensing device 1b is connected to the determining module 2. The voltage of the first power source terminal VG is smaller than the turn-on voltage of the thin film transistor T of the second detection device 1 b. The photoelectric sensor further comprises a gating module 3, the gating module 3 is connected between the plurality of first detection devices 1a and the judgment module 2, and the gating module 3 is configured to control the first detection devices 1a to be connected with or disconnected from the judgment module 2.
Specifically, the gating module 3 may include a gating transistor T', a first pole of which is connected to the second poles of the plurality of first detection devices 1a, a gate of which is connected to the control terminal a for providing the control signal, and a second pole of which is connected to the determination module 2.
In the embodiment of the present invention, the wavelength band of the light corresponding to the second detection device 1b may be an ultraviolet wavelength band. Because the current signal that detection device 1 produced when receiving ultraviolet irradiation is great, consequently, when judging whether have ultraviolet in the light, can break off a plurality of first detection device 1a with judging module 2 through gating module 3 to make judging module 2 can only receive the current signal of second detection device 1b, thereby prevent that the current signal that a plurality of detection device 1 produced is too big after the stack, influence judging module 2 and detect.
Of course, in some embodiments, the gate of the gating transistor T 'may be connected to the first power source terminal VG, so that the gating transistor T' may control the connection and disconnection of the plurality of first detecting devices 1a and the determining module 2 according to the voltage difference between the first power source terminal VG and the first electrode thereof; it is also possible to connect the gate of the thin film transistor T of the second detection device 1b to the first pole of the pass transistor T 'so that the voltage of the first pole of the pass transistor T' is taken as the gate voltage of the thin film transistor T of the second detection device 1 b.
An embodiment of the present invention further provides a display device, including the above-mentioned photosensor, where the display device can implement other various functions through the photosensor, for example: light sensing, biological information detection, human-computer interaction functions and the like. The photoelectric sensor can also be connected with at least one light-emitting unit through a control module, and the control module can be configured to control the driving current of the corresponding light-emitting unit according to the wave band of the light detected by the photoelectric sensor, so as to control the light-emitting unit to display. For example, the light detected by the photoelectric sensor is visible light, and the control module may control the corresponding light emitting unit to display a color corresponding to a wavelength band of the light detected by the photoelectric sensor.
An embodiment of the present invention further provides a method for manufacturing a detection device, and fig. 5 is a flowchart of the method for manufacturing the detection device according to the embodiment of the present invention, and as shown in fig. 5, the method includes:
and S1, forming a thin film transistor on the substrate, wherein the thin film transistor comprises an active layer.
And S2, forming a quantum dot material layer on the side of the active layer far away from the substrate.
And S3, carrying out laser annealing on the quantum dot material layer to form a quantum dot layer.
The preparation method provided by the embodiment of the invention is simple in preparation process, and the prepared detection device is less in interface traps, high in sensitivity and beneficial to realizing a larger detection spectrum range.
In some embodiments, step S1 includes:
s11, forming a gate metal material layer on the substrate by a sputtering or deposition process, and then forming a patterned gate electrode by a patterning process. The material of the gate electrode may include metal, such as molybdenum (Mo), copper (Cu), aluminum (Al), and the like.
S12, forming a gate insulating layer by chemical vapor deposition, wherein the gate insulating layer may be made of silicon oxide (SiO) material, silicon nitride (SiON) material or silicon oxynitride (SiON).
S13, forming an active material layer by a sputtering or deposition process, and then forming a patterned active layer by a patterning process, wherein the active layer comprises an amorphous metal oxide or a crystalline metal oxide, and the metal oxide may include, for example, Indium Gallium Zinc Oxide (IGZO), Indium Zinc Oxide (IZO), Indium Gallium Zinc Y Oxide (IGZYO), and the like.
In some embodiments, step S2 includes:
and S21, spin-coating a metal oxide electrolyte and a quantum dot material on the active layer to obtain the quantum dot material layer. Among them, the metal oxide electrolyte includes a sodium-aluminum oxide electrolyte, and the quantum dot material includes a selenide chalcogenide, such as lead selenide (PbSe), cadmium selenide (CdSe), zinc selenide (ZnSe), and the like.
In an embodiment of the present invention, the substrate may be a flexible substrate or a rigid substrate, a material of the flexible substrate may include Polyimide (PI), and a material of the rigid substrate may include glass. When the substrate is a flexible substrate, before step S1, the preparation method further includes:
s0, providing a rigid carrier, and forming a substrate on the rigid carrier.
After step S3, the preparation method further includes:
and S4, peeling the substrate from the rigid carrier through laser irradiation, wherein the material of the rigid carrier can be glass.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A detection device, comprising:
a substrate;
a thin film transistor disposed on the substrate, the thin film transistor including an active layer;
a quantum dot layer disposed on a side of the thin film transistor remote from the substrate, the quantum dot layer being in contact with the active layer;
the thin film transistor is configured to generate a current signal when the quantum dot layer receives light of a corresponding wavelength band.
2. The detection device according to claim 1, wherein the thin film transistor comprises:
a gate electrode disposed on the substrate;
a gate insulating layer covering the gate electrode;
the source electrode and the drain electrode are arranged on one side, far away from the substrate, of the grid insulating layer;
the active layer comprises a source electrode connecting part, a drain electrode connecting part and a channel part located between the source electrode connecting part and the drain electrode connecting part, the source electrode connecting part is connected with the source electrode, the drain electrode connecting part is connected with the drain electrode, and the quantum dot layer is in contact with the channel part.
3. A detection device according to claim 1 or 2, characterized in that the quantum dot layer has a thickness in the range of
To
In the meantime.
4. A detection device according to claim 1 or 2, wherein the material of the active layer comprises a non-metallic crystalline oxide or a crystalline metal oxide.
5. A photosensor, comprising: a determination module and at least one detection device according to any one of claims 1 to 4;
the judging module is connected with the detecting device and configured to determine the wave band of the light irradiated to the detecting device according to a current signal generated by the detecting device.
6. The photoelectric sensor according to claim 5, wherein the photoelectric sensor comprises a plurality of the detecting devices, different detecting devices generate electric current signals under the irradiation of light with different wave bands, and the electric currents generated by different detecting devices are different in magnitude.
7. The photosensor according to claim 6, wherein the plurality of detection devices comprises a plurality of first detection devices;
the grid electrode of the thin film transistor in the first detection device is connected with a first power supply end, the first pole of the thin film transistor in the first detection device is connected with a second power supply end, and the second pole of the thin film transistor in the first detection device is connected with the judgment module;
wherein a voltage of the first power source terminal is less than a turn-on voltage of the thin film transistor in the first detection device.
8. The photosensor according to claim 7, wherein the plurality of detection devices further includes at least one second detection device, a gate of a thin film transistor in the second detection device is connected to the first power supply terminal, a first pole of a thin film transistor in the second detection device is connected to the second power supply terminal, and a second pole of a thin film transistor in the second detection device is connected to the determination module; wherein a voltage of the first power source terminal is less than a turn-on voltage of a thin film transistor in the second detection device;
the photoelectric sensor further comprises a gating module, wherein the gating module is connected between the plurality of first detection devices and the judgment module, and the gating module is configured to respond to a control signal and control the plurality of first detection devices and the judgment module to be connected or disconnected.
9. A display device comprising a photosensor according to any one of claims 5 to 8.
10. A method for manufacturing a detection device, comprising:
forming a thin film transistor on a substrate, the thin film transistor including an active layer;
forming a quantum dot material layer on one side of the active layer far away from the substrate;
and carrying out laser annealing on the quantum dot material layer to form a quantum dot layer.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6906342B1 (en) * | 1999-05-13 | 2005-06-14 | Lg. Philips Lcd Co., Ltd. | Thin film transistor type optical detecting sensor |
| CN105095883A (en) * | 2015-08-28 | 2015-11-25 | 京东方科技集团股份有限公司 | Display panel and fingerprint recognition control method of display panel |
| CN106960896A (en) * | 2017-03-24 | 2017-07-18 | 深圳市华星光电技术有限公司 | A kind of preparation method of photomask board and graphene light-emitting display device |
| CN108493209A (en) * | 2018-05-24 | 2018-09-04 | 京东方科技集团股份有限公司 | A kind of production method of display base plate, display device and display base plate |
| CN109407902A (en) * | 2018-10-25 | 2019-03-01 | 业成科技（成都）有限公司 | Sensing device and a kind of method for sensing |
-
2021
- 2021-03-09 CN CN202110257175.0A patent/CN113054051A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6906342B1 (en) * | 1999-05-13 | 2005-06-14 | Lg. Philips Lcd Co., Ltd. | Thin film transistor type optical detecting sensor |
| CN105095883A (en) * | 2015-08-28 | 2015-11-25 | 京东方科技集团股份有限公司 | Display panel and fingerprint recognition control method of display panel |
| CN106960896A (en) * | 2017-03-24 | 2017-07-18 | 深圳市华星光电技术有限公司 | A kind of preparation method of photomask board and graphene light-emitting display device |
| CN108493209A (en) * | 2018-05-24 | 2018-09-04 | 京东方科技集团股份有限公司 | A kind of production method of display base plate, display device and display base plate |
| CN109407902A (en) * | 2018-10-25 | 2019-03-01 | 业成科技（成都）有限公司 | Sensing device and a kind of method for sensing |
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