CN108231804A - A kind of photoelectric detection unit and its manufacturing method, photoelectric detection equipment - Google Patents
A kind of photoelectric detection unit and its manufacturing method, photoelectric detection equipment Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 117
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000010410 layer Substances 0.000 claims description 278
- 238000000034 method Methods 0.000 claims description 67
- 230000008569 process Effects 0.000 claims description 60
- 238000000059 patterning Methods 0.000 claims description 34
- 230000015572 biosynthetic process Effects 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 24
- 238000009413 insulation Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 230000009471 action Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 23
- 230000005622 photoelectricity Effects 0.000 description 10
- 239000010409 thin film Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The embodiment of the invention discloses a kind of photoelectric detection unit and its manufacturing method, photoelectric detection equipments.The photoelectric detection unit includes underlay substrate, and the film transistor device being set on underlay substrate, including active layer, grid, source electrode and drain electrode under the action of grid signal, is connected source electrode and drain electrode using active layer；The photoelectric detector being set on underlay substrate for inspiring photoelectric current in the case where photon acts on, generates electric signal, including the photoelectric conversion layer being located on underlay substrate, the electrode layer contacted with photoelectric conversion layer.Wherein, active layer is set with photoelectric conversion layer same layer；First electrode is electrically connected with source electrode, is used for transmission the electric signal of generation.The unit has the advantages of manufacture craft is simple, and structure is frivolous, and photoelectric conversion efficiency is high.
Description
Technical field
The present invention relates to photodetection field, more particularly to a kind of photoelectric detection unit and its manufacturing method, photodetection
Equipment.
Background technology
Photoelectric detection unit is a kind of device cell that radiation energy is converted to electric energy and exporting telecommunication number.The prior art
In, photoelectric detection unit has extensive use in military and national economy every field.It is main in visible ray or near infrared band
For radionetric survey and detection, industry automatic control, Photometric Measurement etc.；It is mainly used for missile guidance, infrared heat in infrared band
Imaging, infrared remote sensing etc..
Photoelectric detection unit commonly used in the prior art utilizes the realizations such as photo resistance, photodiode, photomultiplier
Photoelectric converting function.For photoelectric detection unit, requirement is always existed in terms of photoelectric conversion efficiency is improved.In the existing of routine
In technology, opto-electronic conversion is realized using photodiode device, since the photoelectric conversion layer of amorphous silicon diode requires non-crystalline silicon
Thickness is larger, and technique is relatively difficult to achieve, and in addition photodetection layer starts from after the completion of thin film transistor (TFT), and technique will certainly be right
Film transistor device impacts.Therefore, in the prior art, photoelectric detector manufacture difficulty is big, and complex process is also unfavorable
In the lightening of device, unit and equipment.
Invention content
The present invention provides a kind of photoelectric detection unit, including underlay substrate, the thin film transistor (TFT) being set on underlay substrate
Device and photoelectric detector.
Wherein, film transistor device includes：Active layer, grid, gate insulation layer, source electrode and drain electrode；
Photoelectric detector includes：Photoelectric conversion layer and electrode layer；Electrode layer is contacted with photoelectric conversion layer, and electrode layer includes
Mutually independent first electrode and second electrode；And active layer is set with photoelectric conversion layer same layer；First electrode and source electrode electricity
Connection.
Compared to the photoelectric detection unit of traditional structure, the light-receiving area of the photoelectric detector of the embodiment of the present invention is big,
It is simple in structure, while under the action of extra electric field, photoelectric conversion efficiency significantly improves.The photodetection list of the embodiment of the present invention
Meta structure is simple, small compared to the photoelectric detection unit segment difference of traditional structure, simple for process, and light-receiving area is big, opto-electronic conversion
It is efficient.
Wherein, first electrode is set as including multiple the first strip shaped electric poles being mutually parallel；Second electrode is set as including
Multiple the second strip shaped electric poles being mutually parallel；First strip shaped electric poles and the second strip shaped electric poles alternate intervals arrange.
Optionally, photoelectric conversion layer includes the first pattern that doping is formed, orthographic projection of first pattern on underlay substrate
It is least partially overlapped with the first strip shaped electric poles.
Optionally, photoelectric conversion layer further includes the second pattern that doping is formed, and the second pattern is on substrate substrate
Orthographic projection and the second strip shaped electric poles are least partially overlapped.
Optionally, the doping type of first pattern and the second pattern is different.
Optionally, photoelectric detection unit further includes the first protective layer, positioned at film transistor device and photoelectric detector
Far from underlay substrate side.
Optionally, film transistor device further includes light shield layer, and light shield layer is located at active layer far from grid side, light shield layer
Orthographic projection on underlay substrate, which includes, active layer the orthographic projection on underlay substrate.
Optionally, the ohmic contact regions that active layer includes active area and doping is formed.
Optionally, first electrode be transparent conductor and/or, second electrode is transparent conductor.
Optionally, photoelectric detection unit, which further includes, is set to photoelectric conversion layer close to the reflecting layer of substrate side.
Optionally, reflecting layer is made of metal material, and photoelectric detection unit, which further includes, is set to reflecting layer and opto-electronic conversion
The second protective layer between layer, the second protective layer are made of insulating materials.
Optionally, grid is located at active layer and is located at active layer close to underlay substrate one far from underlay substrate side or, grid
Side.
Optionally, electrode layer is set with source electrode and drain electrode same layer, alternatively, electrode layer is set with grid same layer.
The present invention also provides a kind of broadcasting and TV detecting devices, including above-mentioned photoelectric detection unit.
The present invention also provides a kind of manufacturing methods of photoelectric detection unit to include, and forms active layer and photoelectric conversion layer；
Form grid；Form gate insulation layer；Form first electrode and second electrode；Form source electrode and drain electrode；Wherein, formed active layer and
Photoelectric conversion layer includes, and active layer and photoelectric conversion layer are formed by a patterning processes.It is formed with by a graphics art
Active layer and photoelectric conversion layer simplify processing step, while are conducive to the lightening of photoelectric detection unit.
Optionally, active layer and photoelectric conversion layer is formed to further include, by the first doping process on photoelectric conversion layer shape
Into the first pattern.
Optionally, active layer and photoelectric conversion layer is formed to further include, by the second doping process on photoelectric conversion layer shape
Into the second pattern.
Optionally, it is different with the doping type of doping process used in the second pattern of formation to form the first pattern.
Optionally, the manufacturing method of photoelectric detection unit further includes, and forms patterning processes and the first doping of first electrode
The mask pattern that technique uses is identical；Form the mask pattern that the patterning processes of second electrode and the second doping process use
It is identical.
Optionally, the first doping process further includes, and ohmic contact regions are formed on active layer by the first doping process.
Optionally, the manufacturing method of photoelectric detection unit further includes, on film transistor device and photoelectric detector
It is rectangular into the first protective layer.
Optionally, the manufacturing method of photoelectric detection unit further includes, and reflecting layer is formed on underlay substrate.
Optionally, reflector material is metal；The manufacturing method of photoelectric detection unit further includes, and turns in reflecting layer and photoelectricity
It changes between layer and forms the second protective layer, the second protective layer is insulating materials.
Optionally, the manufacturing method of photoelectric detection unit further includes, and forms light shield layer far from grid side in active layer, hides
Orthographic projection of the photosphere on underlay substrate, which includes, active layer the orthographic projection on underlay substrate.
Optionally, it is active in formation to complete or, formed grid after active layer and photoelectric conversion layer is formed for formation grid
It is completed before layer and photoelectric conversion layer.
Optionally, first electrode and second electrode are formed and is completed simultaneously with drain electrode with forming source electrode.
Optionally, first electrode and second electrode is formed to complete simultaneously with forming grid.
The manufacturing method of photoelectric detection unit provided by the invention by changing the relationship between each step, simplifies
Manufacturing process produces performance more preferably photoelectric detection unit using relatively easy step.
Description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, will simply it be situated between to the attached drawing of embodiment below
It continues, it is therefore apparent that the accompanying drawings in the following description merely relates to some embodiments of the present invention rather than limitation of the present invention.
Fig. 1 a are the photoelectric detection unit of one embodiment of the invention；
Fig. 1 b are sectional view of the photoelectric detection unit of Fig. 1 a along A-A；
Fig. 2 is the photoelectric detection unit of another embodiment of the present invention；
Fig. 3 is the photoelectric detection unit of another embodiment of the present invention；
Fig. 4 is the photoelectric detection unit of another embodiment of the present invention；
Fig. 5 is the photoelectric detection unit of another embodiment of the present invention；
Fig. 6 is the photoelectric detection unit of another embodiment of the present invention；
Fig. 7 is the schematic diagram of the manufacturing method of one embodiment of the invention photoelectric detection unit；
Fig. 8 is the schematic diagram that one embodiment of the invention forms active layer and photoelectric conversion layer；
Fig. 9 is the schematic diagram of the manufacturing method of another embodiment of the present invention photoelectric detection unit；
Figure 10 is the schematic diagram of the manufacturing method of another embodiment of the present invention photoelectric detection unit；
Figure 11 is the schematic diagram of the manufacturing method of another embodiment of the present invention photoelectric detection unit；
Figure 12 is the schematic diagram of the manufacturing method of another embodiment of the present invention photoelectric detection unit；
Figure 13 is the photoelectric detection equipment of one embodiment of the invention.
Reference sign：1 underlay substrate, 20 film transistor devices, 30 photoelectric detectors, 21 active layers, 211 Europe
Nurse contact zone, 212 active areas, 22 grids, 220 grid lines, 23 source electrodes, 24 drain electrodes, 240 data lines, 25 gate insulation layers, 26 first absolutely
Edge layer, 27 light shield layers, 31 photoelectric conversion layers, 311 first patterns, 312 second patterns, 32 electrode layers, 321 first electrodes, 322
Two electrodes, 3,211 first strip shaped electric poles, 3,221 second strip shaped electric poles, 4 first protective layers, 5 reflecting layer, 6 second protective layers, S10
The patterning processes of formation active layer and photoelectric conversion layer, S11 formation active layers and photoelectric conversion layer, the first doping process of S12,
The second doping process of S13, S20 form grid, and S30 forms gate insulation layer, and S40 forms first electrode and second electrode, S50 are formed
Source electrode and drain electrode, S60 form the first protective layer, and S70 forms reflecting layer, and S80 forms the second protective layer.
Specific embodiment
Purpose, technical scheme and advantage to make the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention
Attached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair
Bright part of the embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, ordinary skill
Personnel's all other embodiments obtained under the premise of without creative work, shall fall within the protection scope of the present invention.
Unless otherwise defined, technical term or scientific terminology used herein should be in fields of the present invention and have
The ordinary meaning that the personage of general technical ability is understood." first ", " second " and the similar word used in the disclosure is not
It represents any sequence, quantity or importance, and is used only to distinguish different component parts.Equally, "one", " one " or
The similar word such as "the" does not indicate that quantity limits yet, but represents that there are at least one." comprising " or "comprising" etc. are similar
The element that word means to occur before the word either cover the element for appearing in the word presented hereinafter or object and its wait by object
Together, other elements or object are not excluded for." connection " either the similar word such as " connected " be not limited to physics or
The connection of machinery, but electrical connection can be included, it is either directly or indirect." on ", " under ", "left", "right"
Etc. be only used for represent relative position relation, when be described object absolute position change after, then the relative position relation may also
Correspondingly change.
In the present invention, two structures " same layer setting " both refer to being formed by same material layer, thus they
Belong to identical layer on layered relationship, further, what the two can be formed by same technique, it is particularly possible to by same patterning processes
It is formed.But the distance that " same layer setting " does not represent the structure to underlay substrate 1 is identical, also and in representing they and underlay substrate
Other stepped constructions between 1 are identical.
In the present invention, " patterning processes " essentially form the processing step with specific pattern structure, can include photoetching
A step or multistep for the processing steps such as glue coating, exposure, development, etching and photoresist lift off；Or imprint process, spray
Other this fields such as black printing technology can realize patterning, the technological means of patterning needed for formation.
Photoelectric detection unit according to an embodiment of the invention including underlay substrate 1, is set to thin on underlay substrate 1
Film transistor device 20 and photoelectric detector 30, wherein, film transistor device 20 is electrically connected with photoelectric detector 30；It is thin
Film transistor device 20 has active layer 21, grid 22, source electrode 23, drain electrode 24 and gate insulation layer 25；Gate insulation layer 25 is set to
Between grid 22 and active layer 21；The first insulating layer 26, source electrode 23 and drain electrode 24 and active layer 21 are provided with above grid 22
It is connected by gate insulation layer 25 with the via on the first insulating layer 26；Photoelectric detector 30, which has, to be set on underlay substrate 1
Photoelectric conversion layer 31.Photoelectric detector 30 also has electrode layer 32, and electrode layer 32 is in contact with photoelectric conversion layer 31.Electrode
Layer 32 includes first electrode 321 and second electrode 322, and two electrodes are mutual indepedent.Wherein, photoelectric conversion layer 31 and active layer 21 are same
Layer setting；Wherein, source electrode 23 and first electrode 321 are configured as being electrically connected.
Wherein, photoelectric detector 30 and 20 laid out in parallel in a photoelectric detection unit of thin film transistor (TFT) device, figure
1a is a kind of arrangement mode of one embodiment of the invention.The components such as active layer 21, gate insulation layer 25 are not shown in fig 1 a.
As shown in Figure 1a, first electrode 321 is set as comprising multiple first strip shaped electric poles 3211, multiple first strip shaped electric poles
3211 are arranged in parallel；Second electrode 322 is set as including multiple second strip shaped electric poles 3221, and multiple second strip shaped electric poles 3221 are flat
Row setting.Multiple first strip shaped electric poles 3211 of first electrode 321 and multiple second strip shaped electric poles, 3221 phases of second electrode 322
Mutually interval is arranged into stripping fork shape.
Optionally, first strip shaped electric poles 3211 and second strip shaped electric poles 3221 can be sequentially arranged at intervals,
Can be alternatively arranged with first strip shaped electric poles 3211 with multiple second strip shaped electric poles 3221, multiple first strip shaped electric poles 3211 with
One the second strip shaped electric poles 3221 is alternatively arranged, and multiple first strip shaped electric poles 3211 are arranged with multiple second strip shaped electric poles 3221 interval
Row.
Optionally, the first strip shaped electric poles 3211 and the second strip shaped electric poles 3221 are mutually parallel.
Optionally, which is approximately rectangle, the length of side be more than or equal to 50 microns, it is micro- less than or equal to 150
Rice；The spacing of first strip shaped electric poles 3211, second strip shaped electric poles 3221 adjacent thereto is more than or equal to 3 microns, less than or equal to 20
Micron；The width of first strip shaped electric poles 3211 and the second strip shaped electric poles 3221 is more than or equal to 5 microns, less than or equal to 20 microns.
Optionally, first electrode 321 and second electrode 322 are transparent conductive material, can further increase the utilization of luminous energy
Rate, so as to further improve photoelectric conversion efficiency；For example, first electrode 321 and second electrode 322 can be tin indium oxide.
Fig. 1 b are sectional views of Fig. 1 a along A-A directions.Be as shown in Figure 1 b a film transistor device 20 be top gate structure
Photoelectric conversion unit wherein grid 22 be located at active layer 21 far from 1 side of underlay substrate, electrode layer 32 is located at photoelectric conversion layer
31 far from 1 side of underlay substrate；Photoelectric conversion layer 31 is set with active layer 21 relative to 1 same layer of underlay substrate, meanwhile, source electrode
23rd, also same layer is set for drain electrode 24 and electrode layer 32.
In the operating condition, it 322 is provided with voltage difference between first electrode 321 and second electrode, forms electric field, work as photoelectricity
When conversion layer 31 receives illumination, carrier can be generated, and then connect first electrode 321 and second electrode 322.When grid 22 receives
Signal causes source electrode 23 to be electrically connected with drain electrode 24, can generate electricity between first electrode 321 and second electrode 322 under the action of electric field
Stream, electric signal are transmitted to drain electrode 24 by active layer 21.Pass through electric signal caused by detection and/or its variation, you can realize
Photodetection.Compared to the photoelectric detection unit of traditional structure, the light-receiving area of the photoelectric detector 30 of the embodiment of the present invention
Greatly, it is simple in structure, while under the action of extra electric field, photoelectric conversion efficiency significantly improves.The photoelectricity of the embodiment of the present invention is visited
It is simple to survey cellular construction, it is small compared to the photoelectric detection unit segment difference of traditional structure, it is simple for process, and light-receiving area is big, photoelectricity
High conversion efficiency.
Optionally, which can be that non-crystalline silicon, monocrystalline silicon, polysilicon or DOPOS doped polycrystalline silicon etc. have light
One or more combinations of the semi-conducting material of electrical effect can enough generate carrier, electric connection first by photon excitation
Electrode 321 and second electrode 322.Second electrode 322 can be configured as one voltage source of connection.
For example, photoelectric conversion layer 31 is polycrystalline silicon material.
Optionally, active layer 21 can form the ohmic contact regions 211 for being different from semiconductor region 212 by adulterating.It can
Increase Ohmic contact, reduce source electrode 23 and drain electrode 24 and the contact resistance of active layer 21, the driving voltage of grid can be reduced, subtracted
Few data-signal loss, reduces power consumption.
It should be noted that Figure of description is schematical, Fig. 1 a be not intended as limiting the first strip shaped electric poles 3211 with
The size of second strip shaped electric poles 3221, the foundation of quantity relativeness；Fig. 1 a do not limit film transistor device 20 and photoelectricity yet
Sensitive detection parts 30 are in the relative position and magnitude relationship in 1 direction of underlay substrate.In fact, technical staff can be arranged as required to
Film transistor device 20 and photoelectric detector 30 are set as shown in Figure 1a, can also change the grid line of control 22 current potential of grid
220 and it is used to export the direction of the data line 240 of electrical signal data with 24 phases of drain electrode, and to the position of film transistor device 20
It is adaptively adjusted；The size of film transistor device 20 can also be changed, to meet the requirement of the performance indicators such as aperture opening ratio.
Photoelectric detection unit according to another embodiment of the present invention, as shown in Fig. 2, the opto-electronic conversion of the photoelectric detection unit
Layer 31 further includes the first pattern 311, the orthographic projection of the first strip shaped electric poles 3211 and the first pattern 311 on 1 direction of underlay substrate
It is least partially overlapped.Wherein, which forms for the material of photoelectric conversion layer 31 through overdoping, in photoelectricity
Ohmic contact is formed between conversion layer 31 and first electrode 321, further improves photoelectric conversion efficiency.
Optionally, the first strip shaped electric poles can be completely covered in orthographic projection of first pattern 311 on 1 direction of underlay substrate
3211, it can also be completely superposed with the projection of first electrode 3211, to form sufficient Ohmic contact, reduce resistance, further
Improve photoelectric conversion efficiency.
Photoelectric detection unit according to another embodiment of the present invention, as shown in figure 3, the opto-electronic conversion of the photoelectric detection unit
Layer 31 further includes the second pattern 312, the orthographic projection of the second strip shaped electric poles 3221 and the second pattern 312 on 1 direction of underlay substrate
It is least partially overlapped.Wherein, which forms for the material of photoelectric conversion layer 31 through overdoping, in photoelectricity
Ohmic contact is formed between conversion layer 31 and second electrode 322, resistance is reduced, further improves photoelectric conversion efficiency.
Likewise, the second strip shaped electric poles can be completely covered in orthographic projection of second pattern 312 on 1 direction of underlay substrate
3221, it can be also completely superposed with the projection of the second strip shaped electric poles 3221, to form sufficient Ohmic contact, further improve photoelectricity
Transfer efficiency.
Optionally, the doping type of the first pattern 311 and the second pattern 312 may be the same or different.It for example, can
To be that the first pattern 311 is adulterated for p-type, the second pattern 312 is adulterated for N-shaped；Can also be that the first pattern 311 is adulterated for N-shaped, the
Two patterns 312 are adulterated for p-type；It can also be that the first pattern 311 and the second pattern 312 are p-type doping or N-shaped doping.
When the doping type difference of the first pattern 311 and the second pattern 312, the doping type of the two can select and the
The potential difference direction of one electrode 321 and second electrode 322 matches.For example, when second electrode 322 connects positivity voltage source,
Second pattern 312 is set as p-type doping, and the first pattern 311 is set as N-shaped pattern；Alternatively, when second electrode 322 connects negativity
During voltage source, the second pattern 312 is set as N-shaped doping, and the first pattern 311 is set as p-type pattern.So set, in the first electricity
PN junction can be formed between pole 321 and second electrode 322, under the collective effect of PN junction and electric field force, improves the carrier of generation
Efficiency of transmission, electric current efficiency of transmission can be further improved, so as to further improve photoelectric conversion efficiency.
Optionally, first electrode 321 and/or second electrode 322 are transparent conductive material, can further increase the profit of luminous energy
With rate, so as to further improve photoelectric conversion efficiency；For example, first electrode 321 and/or second electrode 322 can be indium oxide
Tin.
Optionally, according to another embodiment of the present invention, photoelectric detection unit further includes the first protective layer 4, positioned at film crystalline substance
Body tube device 20 and photoelectric detector 30 are far from 1 side of underlay substrate, for by film transistor device 20 and photodetection
Device 30 is isolated from the outside.First protective layer can select the insulating materials of high transparency, while playing a protective role,
The utilization rate of light is improved as possible.Optionally, according to another embodiment of the present invention, as shown in figure 4, photoelectric detection unit further includes instead
Penetrate layer 5；Reflecting layer 5 is set to photoelectric conversion layer 31 close to the side of underlay substrate 1, for the light through photoelectric conversion layer 31
It is reflected, the light for entering the photoelectric conversion unit is reused, increases the utilization rate of light, further improve opto-electronic conversion effect
Rate.
Optionally, reflecting layer 5 is metal material, and photoelectric detection unit further includes the second protective layer 6；Second protective layer 6 is set
It is placed between reflecting layer 5 and photoelectric conversion layer 31, is insulating materials, for completely cutting off being electrically connected for reflecting layer 5 and photoelectric conversion layer 31
It connects.Using material of the metal material as reflecting layer 5, the modes such as sputtering may be used and form reflecting layer 5, be further simplified work
Skill；Metal material reflectivity is larger simultaneously, can effectively improve the utilization rate of light.
Photoelectric detection unit according to another embodiment of the present invention, the film transistor device 20 of photoelectric detection unit is top
Grid structure, grid 22 are set to photoelectric conversion layer 31 close to 1 side of underlay substrate.Grid 22 is set with 32 same layer of electrode layer, i.e.,
It is formed by same material layer.The pattern comprising grid 22 with electrode layer 32 is formed using patterning processes after material layer is formed,
Technique can be further simplified.
Optionally, according to embodiments of the present invention, film transistor device 20 further includes light shield layer 27, on underlay substrate 1
Orthographic projection include and active layer 21 orthographic projection on underlay substrate 1.Light shield layer 27 is located at one of active layer 21 far from grid 22
Side.For example, light shield layer 27 is arranged on active layer 21 close to 1 side of underlay substrate, positioned at underlay substrate 1 close to active layer 21 1
Side.Certainly, those skilled in the art can also be as needed, and light shield layer 27 is arranged on underlay substrate 1 far from active layer 21 1
Side.Improve the reliability of photoelectric conversion unit.
Photoelectric detection unit according to another embodiment of the present invention, grid 22 are located at active layer 21 close to underlay substrate 1 one
Side.For example, as shown in figure 5, wherein, the film transistor device 20 of photoelectric detection unit is bottom grating structure.Grid 22, which is located at, to be had
Active layer 21 is close to 1 side of underlay substrate.Gate insulation layer 25, the gate insulation layer of film transistor device 20 are provided on grid 22
Active layer 21 is provided on 25, active layer 21 and 31 same layer of photoelectric conversion layer of photoelectric detector 30 are set；Thin film transistor (TFT)
Source electrode 23 and drain electrode 24 are provided on the active layer 21 of device 20, shape is arranged on 32 same layer of electrode layer of photoelectric detector 30
It is formed after into material layer using patterning processes comprising source electrode 23, drain electrode 24 and the pattern of electrode layer 32, work can be further simplified
Skill.Electrode layer 32 includes first electrode 321 and second electrode 322, and two electrodes are mutual indepedent.Meanwhile source electrode 23 and first electrode
321 are configured as being electrically connected.
Optionally, according to embodiments of the present invention, film transistor device 20 further includes light shield layer 27.Light shield layer 27, which is located at, to be had
Side of the active layer 21 far from grid 22, orthographic projection on underlay substrate 1, which includes, active layer 21 the positive throwing on underlay substrate 1
Shadow.For example, as shown in figure 5, light shield layer 27 is arranged on active layer remote 21 far from 1 side of underlay substrate, on the first protective layer 4
Side for blocking active layer 21, prevents the semi-conducting material of active layer 21 from receiving photon and generates carrier.
According to another embodiment of the present invention, grid 22 is located at active layer 21 close to 1 side of underlay substrate.For example, such as Fig. 6 institutes
Show, wherein, the film transistor device 20 of photoelectric detection unit is bottom grating structure.Wherein grid 21 and 32 same layer of electrode layer is set
It puts, forms the pattern comprising grid 22 with electrode layer 32 using patterning processes after material layer is formed, work can be further simplified
Skill.Wherein, electrode layer 32 is located at photoelectric conversion layer 31 close to 1 side of underlay substrate.Gate insulation layer 25 is located at 21 top of grid,
Active layer 21 is provided on gate insulation layer 25, active layer 21 is set with 31 same layer of photoelectric conversion layer on electrode layer 32.Optionally,
First protective layer 4 and/or the second protective layer 6 are transparent resin material.
Optionally, gate insulation layer 25 is transparent resin material.
Optionally, reflecting layer 5 is metallic reflector.
Optionally, the width of the first strip shaped electric poles 3211 and the second strip shaped electric poles 3221 be arranged to not less than 5 microns and
No more than 20 microns；The spacing of first strip shaped electric poles 3211 and the second strip shaped electric poles 3221 is arranged to not less than 3 microns and not
More than 10 microns.
Optionally, photoelectric detection unit according to embodiments of the present invention, can be with to realize insulation, buffering, the functions such as flat
Including the buffer layer between each function for being located at underlay substrate 1 and being formed thereon, such as in the specific embodiment of the invention
First insulating layer 26.
Photoelectric detection unit provided in an embodiment of the present invention, compared with the prior art, active layer 21 and photoelectric conversion layer 31
Same layer set, source electrode 23, drain electrode 24 with 32 same layer of electrode layer set, structure simplify, simplify manufacture craft, it is cost-effective and when
Between, be conducive to the lightening of photoelectric detection unit and the equipment including the photoelectric detection unit；Photosensitive area and aperture opening ratio increase,
Be conducive to improve photoelectric conversion efficiency.
It is it should be noted that above only for part top-gate type structure and the thin film transistor (TFT) of part bottom-gate type configuration
Specific embodiment, the protection domain of the embodiment of the present invention is not limited to this, and those skilled in the art can be in the present invention
It in the range of the technical field that embodiment discloses, readily occurs in or replaces and obtain other embodiment, without departing from essence of the invention
God and range, it should also be included within the scope of the present invention.
According to one embodiment of the invention, a kind of photoelectric detection equipment is additionally provided, as shown in figure 13, on one few
State any one photoelectric detection unit in each embodiment.For example, the photoelectric detection equipment can be, comprising array arrangement in
Multiple above-mentioned photoelectric detection units on photodetection substrate.By monitoring or detecting the electric signal of photoelectric detection unit, realize
The function of photodetection.
The present invention also provides the manufacturing methods of photoelectric detection unit.According to one embodiment of the invention, a kind of photoelectricity is provided
The preparation method of probe unit, as shown in fig. 7, comprises following key step：Active layer and photoelectric conversion layer S10 are formed, is formed
Grid S20 forms gate insulation layer S30, forms first electrode and second electrode S40, forms source electrode and drain electrode S50.Wherein, it is formed
Active layer and photoelectric conversion layer S10 are by being formed with a patterning processes S11；For example, can be to pass through same patterning processes
Photoelectric conversion layer 31 and active layer 21 are formed on same semiconductor material layer.
Wherein, form grid S20, form gate insulation layer S30, form first electrode and second electrode S40, formed source electrode and
The S50 that drains can utilize patterning processes to complete, for example, can be formed by patterning processes.
Wherein, it can be that semiconductor material layer is formed on underlay substrate 1 to form active layer and photoelectric conversion layer S10, then
The figure comprising photoelectric conversion layer 31 and active layer 21 is once formed by patterning processes；It forms grid S20 and forms gate insulation
Layer S30 can be that gate insulator layer material is formed between active layer 21 and grid 32, then exhausted comprising grid by patterning processes formation
The figure of edge layer 25, likewise, including the figure of grid 32 by patterning processes formation；Form first electrode and second electrode
S40 can be that the figure comprising first electrode 321 and second electrode 322 is formed by patterning processes；Form source electrode and drain electrode
S50 can be that the figure comprising source electrode 23 and drain electrode 24 is formed by patterning processes.Active layer is formed by a patterning processes
21 and photoelectric conversion layer 31, processing step is simplified, while be conducive to the lightening of photoelectric detection unit.
It should be noted that the step and label in the embodiment of the present invention are not offered as the limit to each step implementation sequence
It is fixed, and mark action is functioned only as, those skilled in the art can be according to this specification specific embodiment to the reality of a step
Sequence is applied to be adaptively adjusted.
According to another embodiment of the present invention, form active layer and photoelectric conversion layer S10 further include the first doping process S12,
First pattern 311 is formed by the first doping process S12；
According to another embodiment of the present invention, as shown in figure 8, formation active layer and photoelectric conversion layer S10 further include second and mix
General labourer skill S13 forms the second pattern 312 by the second doping process S13；
Wherein, the doping type of the first doping process S12 and the second doping process S13 can be different.
According to embodiments of the present invention, the patterning processes and the first doping process of first electrode 321 are formed wherein in step S40
The pattern of mask plate used in S12 is identical, makes formed 321 and first pattern 311 of first electrode on underlay substrate 1
Orthographic projection is overlapped；Likewise, in wherein step S40 formed second electrode 322 patterning processes and the second doping process S13 in institute
The pattern of mask plate is identical, makes orthographic projection of formed 322 and second pattern 312 of second electrode on underlay substrate 1
Overlapping.Processing step is simplified using identical mask pattern, progress one in different process step, saves production cost.
According to embodiments of the present invention, wherein the first doping process S12 also includes forming ohmic contact regions on active layer 21
211.The first pattern on the ohmic contact regions 211 and photoelectric conversion layer 31 on active layer 21 is formd by a doping process
311, simplify processing step.
According to the manufacturing method for the photoelectric detection unit that another embodiment of the present invention provides, further include to form the first protective layer
S60, reflecting layer S70 is formed.And when reflecting layer is metal material, manufacturing method further includes to form the second protective layer S80.
According to the manufacturing method for the photoelectric detection unit that another embodiment of the present invention provides, form grid S20 and form grid
Insulating layer S30 is completed after active layer and photoelectric conversion layer S10 is formed.The thin film transistor (TFT) device of the photoelectric detection unit formed
Part 20 is top gate structure.Wherein, formation first electrode and second electrode S40 can pass through same with formation source electrode and drain electrode S50
Patterning processes are completed, as shown in figure 9, the patterning processes can be patterning processes.Manufacturing method like this is formed as shown in Figure 4
Photoelectric detection unit.
Meanwhile formation first electrode and second electrode S40 can be completed with forming grid S20 by same patterning processes,
As shown in Figure 10.For example, forming grid 22, first electrode 321 and second electrode 322 using same patterning processes, simplifying work
While skill, the manufacture difficulty of electrode material layer can be reduced, reduces the segment difference of film forming, further improves the reliability of technique.
According to the manufacturing method for the photoelectric detection unit that another embodiment of the present invention provides, can also include forming light shield layer
S90, for example, including the figure of light shield layer 27 by patterning processes formation.Wherein, light shield layer 27 is located at active layer 21 far from grid
22 side of pole.
According to the manufacturing method for the photoelectric detection unit that another embodiment of the present invention provides, wherein, form grid S20 and shape
It is completed before active layer and photoelectric conversion layer S10 is formed into gate insulation layer S30, the film crystal of the photoelectric detection unit formed
Tube device 20 is bottom grating structure.Wherein, forming first electrode and second electrode S40 can pass through with forming source electrode and drain electrode S50
Same patterning processes are completed, and as shown in figure 11, the structure of the photoelectric detection unit formed is as shown in Figure 5.Form first electrode
It can be completed with second electrode S40 with forming grid S20 by same patterning processes, as shown in figure 12, the photoelectricity formed is visited
The structure for surveying unit is as shown in Figure 6.Wherein, first electrode 321 can be connected with source electrode 23 by via.
The manufacturing method of photoelectric detection unit provided by the invention by changing the relationship between each step, simplifies
Manufacturing process produces performance more preferably photoelectric detection unit using relatively easy step.
Embodiment described above, only exemplary embodiment of the invention, the protection domain of the embodiment of the present invention is not
This is confined to, any one skilled in the art can readily occur in the range of exposure of the embodiment of the present invention
Modification, variations and alternatives, should all cover within the protection domain of the embodiment of the present invention.
Claims (28)
1. a kind of photoelectric detection unit, which is characterized in that including：
Underlay substrate, the film transistor device and photoelectric detector being set on the underlay substrate；
Wherein, the film transistor device includes：Active layer, grid, gate insulation layer, source electrode and drain electrode；
The photoelectric detector includes：Photoelectric conversion layer and electrode layer；The electrode layer is contacted with the photoelectric conversion layer, institute
It states electrode layer and includes mutually independent first electrode and second electrode；And
The active layer is set with the photoelectric conversion layer same layer；The first electrode is electrically connected with the source electrode.
2. photoelectric detection unit according to claim 1, which is characterized in that the first electrode is set as including multiple phases
Mutually the first parallel strip shaped electric poles；The second electrode is set as including multiple the second strip shaped electric poles being mutually parallel；Described
One strip shaped electric poles are arranged with the second strip shaped electric poles alternate intervals.
3. photoelectric detection unit according to claim 2, which is characterized in that the photoelectric conversion layer includes what doping was formed
First pattern, orthographic projection of first pattern on underlay substrate and first strip shaped electric poles are least partially overlapped.
4. photoelectric detection unit according to claim 3, which is characterized in that the photoelectric conversion layer further includes doping and formed
The second pattern, orthographic projection of second pattern on substrate substrate and second strip shaped electric poles at least partly weight
It is folded.
5. photoelectric detection unit according to claim 4, which is characterized in that first pattern and second pattern
Doping type is different.
6. photoelectric detection unit according to claim 1, which is characterized in that the photoelectric detection unit further includes the first guarantor
Sheath, positioned at the film transistor device and the photoelectric detector far from the underlay substrate side.
7. photoelectric detection unit according to claim 1, which is characterized in that the film transistor device further includes shading
Layer, the light shield layer are located at the active layer far from the grid side, positive throwing of the light shield layer on the underlay substrate
Shadow, which includes, the active layer orthographic projection on the underlay substrate.
8. photoelectric detection unit according to claim 1, which is characterized in that the active layer includes active area and doping shape
Into ohmic contact regions.
9. photoelectric detection unit according to claim 1, which is characterized in that the first electrode for transparent conductor and/
Or, the second electrode is transparent conductor.
10. photoelectric detection unit according to claim 1, which is characterized in that the photoelectric detection unit further includes setting
In the photoelectric conversion layer close to the reflecting layer of the substrate side.
11. photoelectric detection unit according to claim 1, which is characterized in that the reflecting layer is made of metal material, institute
It states photoelectric detection unit and further includes the second protective layer being set between the reflecting layer and the photoelectric conversion layer, described second
Protective layer is made of insulating materials.
12. according to the photoelectric detection unit described in claim 1 to 11 any one, which is characterized in that grid has positioned at described
Active layer is located at the active layer close to the underlay substrate side far from the underlay substrate side or, the grid.
13. photoelectric detection unit according to claim 12, which is characterized in that the electrode layer and the source electrode and described
The same layer that drains setting.
14. photoelectric detection unit according to claim 12, which is characterized in that the electrode layer is set with the grid same layer
It puts.
15. a kind of photoelectric detection equipment, including the photoelectric detection unit as described in claim 1 to 14 any one.
A kind of 16. manufacturing method of photoelectric detection unit according to claim 1, which is characterized in that the photodetection
The manufacturing method of unit includes,
Form active layer and photoelectric conversion layer；Form grid；Form gate insulation layer；Form first electrode and second electrode；It is formed
Source electrode and drain electrode；
Wherein, the formation active layer and photoelectric conversion layer include, and the active layer and described is formed by a patterning processes
Photoelectric conversion layer.
17. the manufacturing method of photoelectric detection unit according to claim 16, which is characterized in that it is described formation active layer and
Photoelectric conversion layer further includes, and the first pattern is formed on the photoelectric conversion layer by the first doping process.
18. the manufacturing method of photoelectric detection unit according to claim 17, which is characterized in that it is described formation active layer and
Photoelectric conversion layer further includes, and the second pattern is formed on the photoelectric conversion layer by the second doping process.
19. the manufacturing method of photoelectric detection unit according to claim 18, which is characterized in that the first pattern of the formation
It is different with the doping type for forming doping process used in the second pattern.
20. the manufacturing method of photoelectric detection unit according to claim 19, which is characterized in that the photoelectric detection unit
Manufacturing method further include, the patterning processes for forming first electrode and the mask pattern that uses of first doping process
It is identical；The patterning processes for forming second electrode are identical with the mask pattern that second doping process uses.
21. the manufacturing method of photoelectric detection unit according to claim 17, which is characterized in that first doping process
It further includes, ohmic contact regions is formed by the first doping process on the active layer.
22. the manufacturing method of photoelectric detection unit according to claim 16, which is characterized in that the photoelectric detection unit
Manufacturing method further include, form the first protective layer above the film transistor device and the photoelectric detector.
23. the manufacturing method of photoelectric detection unit according to claim 16, which is characterized in that the photoelectric detection unit
Manufacturing method further include, form reflecting layer on the underlay substrate.
24. the manufacturing method of photoelectric detection unit according to claim 23, which is characterized in that the reflector material is
Metal；The manufacturing method of the photoelectric detection unit further includes, and is formed between the reflecting layer and the photoelectric conversion layer
Two protective layers, second protective layer are insulating materials.
25. the manufacturing method of photoelectric detection unit according to claim 16, which is characterized in that the photoelectric detection unit
Manufacturing method further include, the active layer far from the grid side formed light shield layer, the light shield layer is in the substrate
Orthographic projection on substrate, which includes, the active layer orthographic projection on the underlay substrate.
26. the manufacturing method of the photoelectric detection unit according to claim 16 to 25 any one, which is characterized in that described
Formation grid is completed after the formation active layer and photoelectric conversion layer or, the formation grid is in the formation active layer
It is completed with before photoelectric conversion layer.
27. photoelectric detection unit manufacturing method according to claim 26, which is characterized in that it is described formation first electrode and
Second electrode is completed simultaneously with the formation source electrode with drain electrode.
28. photoelectric detection unit manufacturing method according to claim 26, which is characterized in that it is described formation first electrode and
Second electrode is completed simultaneously with the formation grid.
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Application publication date: 20180629 |