CN113036385A - Three-path filtering power divider with high selectivity - Google Patents
Three-path filtering power divider with high selectivity Download PDFInfo
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- CN113036385A CN113036385A CN202110223134.XA CN202110223134A CN113036385A CN 113036385 A CN113036385 A CN 113036385A CN 202110223134 A CN202110223134 A CN 202110223134A CN 113036385 A CN113036385 A CN 113036385A
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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Abstract
The invention relates to a three-way filtering power divider with high selectivity, which comprises a bottom metal ground layer, a middle medium substrate and an upper medium substrate which are sequentially overlapped from bottom to top, wherein metallized through holes penetrate through the middle medium substrate and the upper medium substrate and are connected with each other; a circular area is etched in the center of the bottom metal ground, the upper end of the SMA head penetrates through the circular area to be connected with the center of the middle-layer dielectric substrate, and the upper surface of the upper-layer dielectric substrate is printed with a resonator unit. The bottom metal ground, the middle medium substrate and the upper medium substrate are coaxial and are regular hexagons with the same size and the same phase. The resonator unit is in a regular hexagon shape, the center of the resonator unit is a first resonator in an equilateral triangle shape, and the periphery of the resonator unit is a second resonator, a third resonator and a fourth resonator in an isosceles triangle shape. The three-path filtering power divider has the filtering function, the output signals at the output ends have smaller phase and amplitude difference, the isolation degree is high, the out-of-band rejection performance is strong, and the selectivity is good.
Description
Technical Field
The invention relates to a three-path filtering power divider with high selectivity, and belongs to the technical field of intelligent electronics.
Background
With the continuous evolution and application of wireless communication systems, the demand for low cost, low loss and miniaturized passive microwave components is increasing. To accommodate this trend, one effective solution is to integrate multiple functions into one device. Therefore, it has been a hot topic in the academic and industrial fields to integrate the power distribution and frequency selection functions into one circuit to form the filtering power divider.
The most common design method of the filter power divider at present is based on microstrip circuit construction, such as document 1 (g.x. Shen, w.q. Che, q. Xue and w.j. Feng, "Novel design of miniature filtered power divider using dual-composite right-/left-handed detectors," IEEE trans. micro. thermal techn., vol. 66, No. 12, pp. 5260-. In addition, some filtering power splitters designed based on Dielectric resonators (Dielectric resonators) and Substrate integrated waveguides (Substrate integrated waveguides) have been proposed in recent years, such as document 2 (w. Yu and j. x, "multi-in-phase/anti-phase power splitting network with Substrate modulated waveguide on Dielectric resonators," IEEE trans. micro. Theory, vol. 66, No. 11, 854773-. The filtering power divider disclosed in the above documents mostly focuses on designing two or even number of power dividers. As is well known, a three-way wilkinson power divider requires a resistance cross-over implementation, which makes the circuit more complex to fabricate, especially in planar circuits.
To overcome this problem, some asymmetric three-way filter power dividers are designed, such as document 4 (c.m. Zhu and j. Zhang, "Design of high-selectivity asymmetry three-way equivalent frequency filtering power divider," IEEE Access, vol. 7, pp. 55329-55335, May 2019), however, the asymmetric structure results in a large phase and amplitude difference of the output signals at each output terminal. Therefore, it is of great significance to develop a three-way filtering power divider with filtering function and smaller phase and amplitude difference of output signals at each output end.
Disclosure of Invention
The invention aims to overcome the problems in the prior art and provide a three-path filtering power divider with high selectivity, which has a filtering function, and output signals at output ends have smaller phase and amplitude difference, high isolation, strong out-of-band rejection performance and good selectivity.
The invention relates to a three-way filtering power divider with high selectivity, which comprises a bottom metal ground 3, a middle medium substrate 2 and an upper medium substrate 1 which are sequentially overlapped from bottom to top, wherein metallized through holes penetrate through the middle medium substrate 2 and the upper medium substrate 1 and are connected with each other; a circular area 31 is etched in the center of the bottom metal ground 3, the upper end of an SMA head 32 penetrates through the circular area to be connected with the center of the middle-layer dielectric substrate, and a resonator unit is printed on the upper surface of the upper-layer dielectric substrate.
Furthermore, the bottom metal ground 3, the middle dielectric substrate 2 and the upper dielectric substrate 1 are coaxial and are regular hexagons with the same size and the same phase.
Further, the resonator unit is in a regular hexagon shape and comprises a first resonator 4, a second resonator 5, a third resonator 6 and a fourth resonator 7, the first resonator 4 is located at the center of the resonator unit and is in an equilateral triangle shape, and three edges of the first resonator 4 are respectively parallel to the outer edge of the upper-layer dielectric substrate 1; the second resonator 5, the third resonator 6 and the fourth resonator 7 are respectively in the shape of an isosceles triangle with the same size, the bottom edges of the second resonator 5, the third resonator 6 and the fourth resonator 7 respectively correspond to three edges of the first resonator 4, and the waists of the second resonator 5, the third resonator 6 and the fourth resonator 7 form six edges of the resonator unit.
Furthermore, a tri-lobe microstrip transmission line is printed at the center of the upper surface of the middle-layer dielectric substrate 2, the tri-lobe microstrip transmission line is in a regular triangle star shape, and three branch lines of the tri-lobe microstrip transmission line respectively point to the midpoint of the side line of the middle-layer dielectric substrate 2 vertically; a transmission line central metallized through hole 24 is formed in the center of the three-blade type microstrip transmission line; the upper end of the SMA head 32 passes through the transmission line central metallized via 24 to be connected with the central point of the trefoil microstrip transmission line.
Furthermore, branch line end metalized via holes 23 are respectively arranged at three branch line ends of the tri-lobe microstrip transmission line, a first resonator metalized via hole a14, a first resonator metalized via hole B15 and a first resonator metalized via hole C16 are distributed in the central area of the first resonator 4 in a regular triangle shape, and projections of the first resonator metalized via hole a14, the first resonator metalized via hole B15, the first resonator metalized via hole C16 and the branch line end metalized via hole 23 are mutually overlapped and correspondingly connected, so that the three branch line ends of the tri-lobe microstrip transmission line are connected with the first resonator 4.
Further, a first resonator metalized through hole 17 and a second resonator metalized through hole 18 are symmetrically arranged in a region of the second resonator 5 close to the bottom edge, and the first resonator metalized through hole 17 and the second resonator metalized through hole 18 are axially symmetrically distributed by taking a vertical bisector of the bottom edge of the second resonator 5 as a center; a third resonator metalized through hole I19 and a third resonator metalized through hole II 20 are symmetrically arranged in the area, close to the bottom edge, of the third resonator 6, and the third resonator metalized through hole I19 and the third resonator metalized through hole II 20 are axially symmetrically distributed by taking the vertical bisector of the bottom edge of the third resonator 6 as the center; a first metallized through hole 21 of the fourth resonator and a second metallized through hole 22 of the fourth resonator are symmetrically arranged in the area, close to the bottom edge, of the fourth resonator 7, and the first metallized through hole 21 of the fourth resonator and the second metallized through hole 22 of the fourth resonator are axially symmetrically distributed by taking a perpendicular bisector of the bottom edge of the fourth resonator 7 as the center; the first metalized through hole 17 of the second resonator, the second metalized through hole 18 of the second resonator, the first metalized through hole 19 of the third resonator, the second metalized through hole 20 of the third resonator, the first metalized through hole 21 of the fourth resonator and the second metalized through hole 22 of the fourth resonator form a hexagon, the middle medium substrate metalized through hole A25, the middle medium substrate metalized through hole B26, the middle medium substrate metalized through hole C27, the middle medium substrate metalized through hole D28, the middle medium substrate metalized through hole E29 and the middle medium substrate metalized through hole F30 which are distributed in a hexagon are arranged on the middle medium substrate 2, the first metalized through hole 17 of the second resonator, the second metalized through hole 18 of the second resonator, the first metalized through hole 19 of the third resonator, the second metalized through hole 20 of the third resonator, the first metalized through hole 21 of the fourth resonator and the second metalized through hole 22 of the second resonator form a medium substrate metalized through hole A25, a medium substrate metalized through hole A25 of the hexagon middle medium substrate, Orthographic projections of the middle-layer dielectric substrate metalized via hole B26, the middle-layer dielectric substrate metalized via hole C27, the middle-layer dielectric substrate metalized via hole D28, the middle-layer dielectric substrate metalized via hole E29 and the middle-layer dielectric substrate metalized via hole F30 are mutually overlapped and correspondingly connected.
Further, a first output branch 8, a second output branch 9 and a third output branch 10 which are centrosymmetrically and radially distributed are printed on the upper surface of the upper-layer dielectric substrate 1, the top coupling branch of the first output branch 8 is located on the outer side of the vertex of the second resonator 5, the top coupling branch of the second output branch 9 is located on the outer side of the vertex of the third resonator 6, and the top coupling branch of the third output branch 10 is located on the outer side of the vertex of the fourth resonator 7; each top coupling branch is parallel to the waist edges of the second resonator 5, the third resonator 6 and the fourth resonator 7 respectively.
Furthermore, waist branches are respectively and symmetrically connected to two sides of the first output branch 8, the second output branch 9 and the third output branch 10, each waist branch is located outside the top coupling branch and is also respectively parallel to the waist edges of the second resonator 5, the third resonator 6 and the fourth resonator 7, the waist branch of the first output branch 8 is connected with the waist branch of the second output branch 9 through a first isolation resistor 11, the waist branch of the second output branch 9 is connected with the waist branch of the third output branch 10 through a second isolation resistor 12, and the waist branch of the third output branch 10 is connected with the waist branch of the first output branch 8 through a third isolation resistor 13; the electrical length of the top coupling branch is one half of the waist branch.
Furthermore, the relative dielectric constant of the upper dielectric substrate 1 and the middle dielectric substrate 2 is 10.2, and the thickness is 0.625 mm.
Further, the side length a of the first resonator 4= 50mm, and the widths w of the first output branch 8, the second output branch 9, and the third output branch 103Length l of =1.30mm3=11.68mm, length of top coupling branch l1=11.56mm, width w1=0.3mm, length of waist branch l2=29.09mm, width w2=0.50 mm; the three branch lines of the three-leaf microstrip transmission line have length l4=7.8mm, width w4=1.00 mm; the aperture d of each upper dielectric substrate metalized through hole1= aperture of metallized through hole of medium substrate in each middle layer3=0.6mm, aperture d of the transmission line central metallized via 242=1.20mm, diameter d of the circular area4=2 mm; the spacing g1=0.3mm between adjacent edges of the first resonator 4 and the second, third and fourth resonators 5, 6 and 7, the spacing g2=0.13mm between adjacent edges of the coupling stub and the second, third and fourth resonators 5, 6 and 7, the spacing g3=1.31mm between the node of the top coupling stub and the node of the waist stub; the distance l between the transmission line central metallized via 24 and the middle-layer dielectric substrate metallized via B265=20.04mm, the distance l between the middle dielectric substrate metalized via a25 and the middle dielectric substrate metalized via B266=20mm, the distance l between the middle dielectric substrate metalized via B26 and the middle dielectric substrate metalized via C277=22.04mm, the distance between the middle dielectric substrate metalized via C27 and the middle dielectric substrate metalized via D28 =20mm, the distance between the middle dielectric substrate metalized via D28 and the middle dielectric substrate metalized via E29 =22.04mm, the distance between the middle dielectric substrate metalized via E29 and the middle dielectric substrate metalized via F30 =20mm, and the distance between the middle dielectric substrate metalized via F30 and the middle dielectric substrate metalized via a25 =22.04 mm.
The invention has the beneficial effects that: 1. the filtering power divider separates a common-mode signal from a differential-mode signal through a three-blade type microstrip transmission line: the signal transmits three equal-amplitude and same-phase signals to the equilateral triangle patch resonator, namely the first resonator through the three-leaf microstrip transmission line, and the first resonator can only excite the common-mode signal of the equilateral triangle patch resonator, so that the separation of the common-mode signal and the differential-mode signal is realized.
2. This ware is divided to filtering merit passes through a plurality of metal via holes, has restrained the higher mode of wave filter, has expanded the stop band bandwidth that the ware was divided to filtering merit: according to the invention, the plurality of metalized through holes are arranged at the junction of the zero potential point of the working mode and the high potential point of the higher mode, so that the suppression of the higher mode of the filtering power divider is realized; meanwhile, the metalized via hole plays a role of a parallel inductor in the whole circuit, and an extra transmission zero point is generated at the edge of the passband, so that the passband selectivity is further improved; compared with the electric field of a microstrip line structure, the edge electric field distribution of the patch resonators is relatively uniform, and the electric field distribution of the output three patch resonators can be more uniform by introducing the metalized via holes, so that each output signal has smaller phase and amplitude difference.
3. The equilateral triangle structure after cutting along the electric field magnetic wall in the equilateral triangle first resonator further reduces the size of the circuit: the invention reduces the volume of the second-order patch resonator, namely the second resonator, the third resonator and the fourth resonator by cutting the patch resonator; for a complete equilateral triangle patch resonator, since the three sides are magnetic walls, i.e., open-circuit surfaces, cutting the equilateral triangle patch resonator along the virtual magnetic wall of the TM11 mode of operation can reduce the physical size of 1/3 without changing the operating frequency of the patch resonator.
4. The invention realizes the second-order filtering function by coupling the signal to three isosceles triangle resonators, namely a second resonator, a third resonator and a fourth resonator from one equilateral triangle patch resonator, namely a first resonator, and realizes high isolation between ports by introducing a resistor between every two output ends of the three-way filtering power divider.
Drawings
FIG. 1 is a schematic diagram of a three-way filtering power divider with high selectivity according to the present invention;
FIG. 2 is a front view of the three-way filtering power divider of the present invention;
FIG. 3 is a schematic size diagram of an upper dielectric substrate of the three-way filter power divider of the present invention;
FIG. 4 is a schematic diagram showing the dimensions of a middle dielectric substrate of the three-way filter power divider according to the present invention;
FIG. 5 is a schematic diagram of the dimensions of the bottom metal of the three-way filtering power divider of the present invention;
FIG. 6 is a simulation diagram of S-parameter testing in an embodiment of the present invention;
FIG. 7 is a diagram of isolation testing and simulation according to an embodiment of the present invention;
FIG. 8 is a diagram of amplitude and phase difference testing and simulation according to an embodiment of the present invention;
in the figure: 1 upper dielectric substrate, 2 middle dielectric substrate, 3 bottom metal ground, 4 first resonator, 5 second resonator, 6 third resonator, 7 fourth resonator, 8 first output branch, 9 second output branch, 10 third output branch, 11 first isolation resistor, 12 second isolation resistor, 13 third isolation resistor, 14 metalized via A, 15 first resonator metalized via B, 16 first resonator metalized via C, 17 second resonator metalized via A, 18 second resonator metalized via II, 19 third resonator metalized via A, 20 third resonator metalized via II, 21 fourth resonator metalized via I, 22 fourth resonator metalized via II, 23 branch line end metalized via, 24 transmission line center metalized via, 25 middle dielectric substrate metalized via A, 26 dielectric substrate metalized via B, 2 third resonator metalized via A, 15 third resonator metalized via B, and fourth resonator metalized via B, 27 middle layer dielectric substrate metalized via C, 28 middle layer dielectric substrate metalized via D, 29 middle layer dielectric substrate metalized via E, 30 middle layer dielectric substrate metalized via F, 31 circular area, 32 SMA head.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.
As shown in fig. 1 and 2, the three-way filtering power divider with high selectivity of the present invention comprises a bottom metal ground 3, a middle dielectric substrate 2 and an upper dielectric substrate 1, which are stacked in sequence from bottom to top, wherein the middle dielectric substrate 2 and the upper dielectric substrate 1 are both penetrated with metalized through holes and connected with each other; a circular area 31 is etched in the center of the bottom metal ground 3, the upper end of the SMA head 32 penetrates through the circular area to be connected with the center of the middle dielectric substrate, and the upper surface of the upper dielectric substrate is printed with a resonator unit.
The bottom metal ground 3, the middle dielectric substrate 2 and the upper dielectric substrate 1 are coaxial and are regular hexagons with the same size and the same phase.
The resonator unit is in a regular hexagon shape and comprises a first resonator 4, a second resonator 5, a third resonator 6 and a fourth resonator 7, the first resonator 4 is positioned in the center of the resonator unit and is in an equilateral triangle shape, and three edges of the first resonator 4 are respectively parallel to the outer edge of the upper-layer dielectric substrate 1; the second resonator 5, the third resonator 6 and the fourth resonator 7 are respectively in the shape of an isosceles triangle with the same size, the bottom sides of the second resonator 5, the third resonator 6 and the fourth resonator 7 respectively correspond to three sides of the first resonator 4, and the waists of the second resonator 5, the third resonator 6 and the fourth resonator 7 form six sides of the resonator unit.
A trefoil microstrip transmission line is printed at the center of the upper surface of the middle-layer dielectric substrate 2 and is in a regular triangular star shape, and three branch lines of the trefoil microstrip transmission line respectively point to the midpoint of the side line of the middle-layer dielectric substrate 2 vertically; a transmission line central metallized through hole 24 is arranged at the center of the three-blade type microstrip transmission line; the upper end of the SMA head 32 is connected to the centre point of the tri-lobed microstrip transmission line through the transmission line central metallised via 24.
Branch line end metalized through holes 23 are respectively formed in three branch line ends of the three-leaf type microstrip transmission line, a first resonator metalized through hole A14, a first resonator metalized through hole B15 and a first resonator metalized through hole C16 are distributed in the central area of the first resonator 4 in an equilateral triangle shape, projections of the first resonator metalized through hole A14, the first resonator metalized through hole B15, the first resonator metalized through hole C16 and the branch line end metalized through holes 23 are overlapped and correspondingly connected, and the three branch line ends of the three-leaf type microstrip transmission line are connected with the first resonator 4.
A first resonator metalized through hole 17 and a second resonator metalized through hole 18 are symmetrically arranged in the area, close to the bottom edge, of the second resonator 5, and the first resonator metalized through hole 17 and the second resonator metalized through hole 18 are axially symmetrically distributed by taking the vertical bisector of the bottom edge of the second resonator 5 as the center;
a third resonator metalized through hole I19 and a third resonator metalized through hole II 20 are symmetrically arranged in the area, close to the bottom edge, of the third resonator 6, and the third resonator metalized through hole I19 and the third resonator metalized through hole II 20 are axially symmetrically distributed by taking the vertical bisector of the bottom edge of the third resonator 6 as the center;
a first metallized through hole 21 and a second metallized through hole 22 of the fourth resonator are symmetrically arranged in the area, close to the bottom edge, of the fourth resonator 7, and the first metallized through hole 21 and the second metallized through hole 22 of the fourth resonator are axially symmetrically distributed by taking the vertical bisector of the bottom edge of the fourth resonator 7 as the center;
the first metalized through hole 17 of the second resonator, the second metalized through hole 18 of the second resonator, the first metalized through hole 19 of the third resonator, the second metalized through hole 20 of the third resonator, the first metalized through hole 21 of the fourth resonator and the second metalized through hole 22 of the fourth resonator form a hexagon, the middle medium substrate metalized through hole A25, the middle medium substrate metalized through hole B26, the middle medium substrate metalized through hole C27, the middle medium substrate metalized through hole D28, the middle medium substrate metalized through hole E29 and the middle medium substrate metalized through hole F30 which are distributed in a hexagon are arranged on the middle medium substrate 2, the first metalized through hole 17 of the second resonator, the second metalized through hole 18 of the second resonator, the first metalized through hole 19 of the third resonator, the second metalized through hole 20 of the third resonator, the first metalized through hole 21 of the fourth resonator and the second metalized through hole 22 of the second resonator form a hexagon and the middle medium substrate metalized through hole A25, the middle medium substrate metalized through hole A25 of the middle medium substrate, orthographic projections of the middle-layer dielectric substrate metalized via hole B26, the middle-layer dielectric substrate metalized via hole C27, the middle-layer dielectric substrate metalized via hole D28, the middle-layer dielectric substrate metalized via hole E29 and the middle-layer dielectric substrate metalized via hole F30 are mutually overlapped and correspondingly connected.
The upper surface of the upper-layer dielectric substrate 1 is further printed with a first output branch 8, a second output branch 9 and a third output branch 10 which are distributed in a centrosymmetric radial manner, the top coupling branch of the first output branch 8 is positioned on the outer side of the vertex of the second resonator 5, the top coupling branch of the second output branch 9 is positioned on the outer side of the vertex of the third resonator 6, and the top coupling branch of the third output branch 10 is positioned on the outer side of the vertex of the fourth resonator 7; each top coupling branch is parallel to the waist of the second resonator 5, the third resonator 6 and the fourth resonator 7, respectively.
Waist branches are respectively and symmetrically connected to two sides of the first output branch 8, the second output branch 9 and the third output branch 10, each waist branch is located on the outer side of the top coupling branch and is also respectively parallel to the waist edges of the second resonator 5, the third resonator 6 and the fourth resonator 7, the waist branch of the first output branch 8 is connected with the waist branch of the second output branch 9 through a first isolation resistor 11, the waist branch of the second output branch 9 is connected with the waist branch of the third output branch 10 through a second isolation resistor 12, and the waist branch of the third output branch 10 is connected with the waist branch of the first output branch 8 through a third isolation resistor 13; the electrical length of the top coupling stub is one-half of the waist stub.
The relative dielectric constant of the upper dielectric substrate 1 and the middle dielectric substrate 2 is 10.2, and the thickness is 0.625 mm.
As shown in fig. 3 to 5, the side length a =50mm of the first resonator 4, the width w3=1.30mm, the length l3=11.68mm of the first, second and third output branches 8, 9 and 10, the length l1=11.56mm, the width w1=0.3mm of the top coupling branch, the length l2=29.09mm of the waist branch, and the width w2=0.50 mm; the three branch line lengths l4=7.8mm and the width w4=1.00mm of the trefoil microstrip transmission line.
The aperture d1 of each upper dielectric substrate metalized via =0.6mm, the aperture d2 of the transmission line center metalized via 24 =1.20mm, and the diameter d4 of the circular area =2 mm.
The distance g1=0.3mm between the adjacent edges of the first resonator 4 and the second resonator 5, the third resonator 6, and the fourth resonator 7, the distance g2=0.13mm between the coupling stub and the adjacent edges of the second resonator 5, the third resonator 6, and the fourth resonator 7, and the distance g3=1.31mm between the node of the top coupling stub and the node of the waist stub;
the pitch between the transmission line center metalized via 24 and the middle dielectric substrate metalized via B26, i 5=20.04mm, the pitch between the middle dielectric substrate metalized via a25 and the middle dielectric substrate metalized via B26, i 6=20mm, the pitch between the middle dielectric substrate metalized via B26 and the middle dielectric substrate metalized via C27, i 7=22.04mm, the pitch between the middle dielectric substrate metalized via C27 and the middle dielectric substrate metalized via D28, the pitch between the middle dielectric substrate metalized via D28 and the middle dielectric substrate metalized via E29 =22.04mm, the pitch between the middle dielectric substrate metalized via E29 and the middle dielectric substrate metalized via F30 =20mm, and the pitch between the middle dielectric substrate metalized via F30 and the middle dielectric substrate metalized via a25 =22.04 mm.
The present embodiment performs modeling simulation in electromagnetic simulation software hfss.18.
As shown in fig. 6, the center frequency of the filter power divider is 2.2GHz, the relative bandwidth is 4.7%, the minimum in-band insertion loss is-1.05 dB, and the return loss in the pass band is less than-15 dB. In addition, two transmission zeros are respectively generated at two sides of the passband, and the harmonic suppression reaches below-25 dB up to the range of 6.38GHz, so that the power division filter in the embodiment has high selectivity.
As shown in fig. 7, the isolation between the two output ports is around-20 dB.
As shown in fig. 8, the amplitude difference between the ports is less than 0.2dB, and the phase difference is less than 0.25 °, so that the power division filter in this embodiment realizes a good power average distribution function.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (10)
1. A three-way filter power divider with high selectivity, characterized by: the metal ground structure comprises a bottom metal ground (3), a middle medium substrate (2) and an upper medium substrate (1) which are sequentially stacked from bottom to top, wherein metallized through holes penetrate through the middle medium substrate (2) and the upper medium substrate (1) and are connected with each other; a circular area (31) is etched in the center of the bottom metal ground (3), the upper end of the SMA head (32) penetrates through the circular area to be connected with the center of the middle-layer dielectric substrate, and the upper surface of the upper-layer dielectric substrate is printed with a resonator unit.
2. The three-way filter power divider with high selectivity of claim 1, wherein: the bottom metal ground (3), the middle dielectric substrate (2) and the upper dielectric substrate (1) are coaxial and are regular hexagons with the same size and the same phase.
3. The three-way filter power divider with high selectivity of claim 2, wherein: the resonator unit is in a regular hexagon shape and comprises a first resonator (4), a second resonator (5), a third resonator (6) and a fourth resonator (7), the first resonator (4) is located in the center of the resonator unit and is in an equilateral triangle shape, and three edges of the first resonator (4) are parallel to the outer edge of the upper-layer dielectric substrate (1) respectively; the second resonator (5), the third resonator (6) and the fourth resonator (7) are isosceles triangles with the same shape and size, the bottom edges of the second resonator (5), the third resonator (6) and the fourth resonator (7) correspond to three edges of the first resonator (4) respectively, and the waists of the second resonator (5), the third resonator (6) and the fourth resonator (7) form six edges of the resonator unit.
4. The three-way filter power divider with high selectivity of claim 3, wherein: a trefoil microstrip transmission line is printed at the center of the upper surface of the middle-layer dielectric substrate (2), the trefoil microstrip transmission line is in a regular triangular star shape, and three branch lines of the trefoil microstrip transmission line respectively point to the midpoint of a side line of the middle-layer dielectric substrate (2) vertically; a transmission line central metallized through hole (24) is formed in the center of the three-blade type microstrip transmission line; the upper end of the SMA head (32) penetrates through a transmission line central metallized through hole (24) to be connected with the central point of the three-blade type microstrip transmission line.
5. The three-way filter power divider with high selectivity of claim 3, wherein: branch line end metalized through holes (23) are respectively formed in three branch line ends of the three-leaf type microstrip transmission line, a first resonator metalized through hole A (14), a first resonator metalized through hole B (15) and a first resonator metalized through hole C (16) are distributed in the central area of the first resonator (4) in a regular triangle shape, projections of the first resonator metalized through hole A (14), the first resonator metalized through hole B (15), the first resonator metalized through hole C (16) and the branch line end metalized through hole (23) are mutually overlapped and correspondingly connected, and the three branch line ends of the three-leaf type microstrip transmission line are connected with the first resonator (4).
6. The three-way filter power divider with high selectivity of claim 3, wherein: a first metallized resonator via hole (17) and a second metallized resonator via hole (18) are symmetrically arranged in the area, close to the bottom edge, of the second resonator (5), and the first metallized resonator via hole (17) and the second metallized resonator via hole (18) are axially symmetrically distributed by taking the vertical bisector of the bottom edge of the second resonator (5) as the center;
a third resonator metalized through hole I (19) and a third resonator metalized through hole II (20) are symmetrically arranged in the area, close to the bottom edge, of the third resonator (6), and the third resonator metalized through hole I (19) and the third resonator metalized through hole II (20) are axially symmetrically distributed by taking the vertical bisector of the bottom edge of the third resonator (6) as the center;
a first metallized through hole (21) of the fourth resonator and a second metallized through hole (22) of the fourth resonator are symmetrically arranged in the area, close to the bottom edge, of the fourth resonator (7), and the first metallized through hole (21) of the fourth resonator and the second metallized through hole (22) of the fourth resonator are axially symmetrically distributed by taking a vertical bisector of the bottom edge of the fourth resonator (7) as the center;
the first metalized through hole (17) of the second resonator, the second metalized through hole (18) of the second resonator, the first metalized through hole (19) of the third resonator, the second metalized through hole (20) of the third resonator, the first metalized through hole (21) of the fourth resonator and the second metalized through hole (22) of the fourth resonator form a hexagon, a middle-layer dielectric substrate metalized through hole A (25), a middle-layer dielectric substrate metalized through hole B (26), a middle-layer dielectric substrate metalized through hole C (27), a middle-layer dielectric substrate metalized through hole D (28), a middle-layer dielectric substrate metalized through hole E (29) and a middle-layer dielectric substrate metalized through hole F (30) which are distributed in a hexagon shape are arranged on the middle-layer dielectric substrate (2), and the first metalized through hole (17) of the second resonator, the second metalized through hole (18) of the second resonator, the first metalized through hole (19) of the third resonator, Orthographic projections of a second metalized through hole (20) of the third resonator, a first metalized through hole (21) of the fourth resonator and a second metalized through hole (22) of the fourth resonator, a middle medium substrate metalized through hole A (25) of the middle medium substrate, a middle medium substrate metalized through hole B (26), a middle medium substrate metalized through hole C (27), a middle medium substrate metalized through hole D (28), a middle medium substrate metalized through hole E (29) and a middle medium substrate metalized through hole F (30) are mutually overlapped and correspondingly connected.
7. The three-way filter power divider with high selectivity of claim 2, wherein: the upper surface of the upper-layer dielectric substrate (1) is further printed with a first output branch (8), a second output branch (9) and a third output branch (10) which are distributed in a centrosymmetric radial manner, the top coupling branch of the first output branch (8) is positioned on the outer side of the vertex of the second resonator (5), the top coupling branch of the second output branch (9) is positioned on the outer side of the vertex of the third resonator (6), and the top coupling branch of the third output branch (10) is positioned on the outer side of the vertex of the fourth resonator (7); and each top coupling branch is parallel to the waist edges of the second resonator (5), the third resonator (6) and the fourth resonator (7) respectively.
8. The three-way filter power divider with high selectivity of claim 7, wherein: waist branches are respectively and symmetrically connected to two sides of the first output branch (8), the second output branch (9) and the third output branch (10), each waist branch is located on the outer side of the top coupling branch and is also parallel to the waist edges of the second resonator (5), the third resonator (6) and the fourth resonator (7), the waist branch of the first output branch (8) is connected with the waist branch of the second output branch (9) through a first isolation resistor (11), the waist branch of the second output branch (9) is connected with the waist branch of the third output branch (10) through a second isolation resistor (12), and the waist branch of the third output branch (10) is connected with the waist branch of the first output branch (8) through a third isolation resistor (13); the electrical length of the top coupling branch is one half of the waist branch.
9. The three-way filter power divider with high selectivity of claim 8, wherein: the relative dielectric constant of the upper dielectric substrate (1) and the middle dielectric substrate (2) is 10.2, and the thickness is 0.625 mm.
10. The three-way filter power divider with high selectivity of claim 3, wherein: the side length a =50mm of the first resonator (4), the width w3=1.30mm, the length l3=11.68mm of the first, second and third output branches (8, 9, 10), the length l1=11.56mm, the width w1=0.3mm of the top coupling branch, the length l2=29.09mm of the waist branch, the width w2=0.50 mm; the three branch line lengths l4=7.8mm and the width w4=1.00mm of the trefoil microstrip transmission line;
the aperture d1 of each upper dielectric substrate metalized via = d3=0.6mm of each middle dielectric substrate metalized via, the aperture d2=1.20mm of the transmission line center metalized via (24), and the diameter d4=2mm of the circular area;
the spacing g1=0.3mm between adjacent edges of the first resonator (4) and the second (5), third (6) and fourth (7) resonators, the spacing g2=0.13mm between adjacent edges of the coupling stub and the second (5), third (6) and fourth (7) resonators, the spacing g3=1.31mm between the node of the top coupling stub and the node of the waist stub;
the distance l5=20.04mm between the transmission line central metalized via (24) and the middle dielectric substrate metalized via B (26), the distance l6=20mm between the middle dielectric substrate metalized via a (25) and the middle dielectric substrate metalized via B (26), the distance l7=22.04mm between the middle dielectric substrate metalized via B (26) and the middle dielectric substrate metalized via C (27), the distance =20mm between the middle dielectric substrate metalized via C (27) and the middle dielectric substrate metalized via D (28), the distance =22.04mm between the middle dielectric substrate metalized via D (28) and the middle dielectric substrate metalized via E (29), the distance =20mm between the middle dielectric substrate metalized via E (29) and the middle dielectric substrate metalized via F (30), and the distance =20mm between the middle dielectric substrate metalized via F (30) and the middle dielectric substrate metalized via a (25) The spacing =22.04 mm.
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Denomination of invention: A highly selective three channel filtering power divider Effective date of registration: 20230705 Granted publication date: 20211123 Pledgee: Bank of China Limited by Share Ltd. Nanjing Jiangning branch Pledgor: NANJING WEIHAO TECHNOLOGY CO.,LTD. Registration number: Y2023980047359 |