CN113035971A - Array film layer, manufacturing method of array film layer and electronic equipment - Google Patents
Array film layer, manufacturing method of array film layer and electronic equipment Download PDFInfo
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- CN113035971A CN113035971A CN202110231905.XA CN202110231905A CN113035971A CN 113035971 A CN113035971 A CN 113035971A CN 202110231905 A CN202110231905 A CN 202110231905A CN 113035971 A CN113035971 A CN 113035971A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 104
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000000903 blocking effect Effects 0.000 claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims description 52
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 238000002310 reflectometry Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 442
- 239000010408 film Substances 0.000 description 101
- 238000010586 diagram Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 230000009977 dual effect Effects 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 238000013041 optical simulation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Abstract
The application provides an array film layer, a manufacturing method of the array film layer and electronic equipment, and relates to the technical field of electronic devices. In this application, the array rete includes the light reflection layer that is located on the support rete and is located the semiconductor layer that the light reflection layer is kept away from one side of the support rete, and the semiconductor layer is based on photosensitive material preparation formation for form the transistor array. The light reflecting layer is for blocking the target light transmitted from a side of the light reflecting layer away from the semiconductor layer toward the semiconductor layer from entering the semiconductor layer. Based on the method, the electrical performance of the existing transistor device can be improved.
Description
Technical Field
The application relates to the technical field of electronic devices, in particular to an array film layer, a manufacturing method of the array film layer and electronic equipment.
Background
Electronic devices (e.g., display devices, etc.) typically include an array of transistors formed based on transistors, and thus, the electrical performance of the transistors directly affects the electrical performance of the electronic device. Based on this, in order to enable the electronic device to provide better functions to the user, a transistor having better electrical performance in the transistor array is required. However, the inventors have found that the electrical performance of the transistors in the conventional transistor array still needs to be improved.
Disclosure of Invention
In view of the above, an object of the present invention is to provide an array film, a method for manufacturing the array film and an electronic device, so as to improve the electrical performance of the conventional transistor device.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions:
an array film layer comprising:
a light reflecting layer on the support film layer;
the semiconductor layer is positioned on one side, away from the support film layer, of the light reflection layer, and is made of photosensitive materials and used for forming a transistor array;
wherein the light reflecting layer is used for preventing target light transmitted to the semiconductor layer from one side of the light reflecting layer far away from the semiconductor layer from entering the semiconductor layer.
In a preferred option of the embodiment of the present application, in the array film layer, the light reflecting layer includes:
at least one first reflecting structure layer, wherein the at least one first reflecting structure layer is positioned on one side of the semiconductor layer close to the supporting film layer;
at least one second reflecting structure layer, wherein the at least one second reflecting structure layer is positioned on one side of the semiconductor layer close to the supporting film layer;
and the refractive index of the first reflecting structure layer is different from that of the second reflecting structure layer, so that a distributed Bragg reflector structure is formed.
In an embodiment of the present invention, in the array film, the first reflective structure layer and the second reflective structure layer are respectively formed based on different materials, and the materials for forming the first reflective structure layer and the second reflective structure layer include at least one of the following materials:
silicon, an oxide of silicon, a nitride of silicon, an oxide of titanium, a nitride of titanium, an oxide of tungsten, a nitride of tungsten, an oxide of molybdenum, a nitride of molybdenum, an oxide of aluminum, a nitride of aluminum, an oxide of tantalum, and a nitride of tantalum.
In a preferred option of the embodiment of the present application, in the array film layer, the method further includes:
the grid metal layer is positioned on one side, far away from the light reflection layer, of the semiconductor layer, and the grid metal layer and the semiconductor layer are used for forming the transistor array.
In a preferred option of the embodiment of the present application, in the array film layer, the method further includes:
a buffer layer on one side of the semiconductor layer;
at least one laminated structure, wherein the at least one laminated structure is positioned on one side of the buffer layer away from the semiconductor layer;
each layer of the laminated structure comprises a blocking layer and a flexible layer, the flexible layer is located on one side, far away from the buffer layer, of the blocking layer, the flexible layer, which is the farthest away from the semiconductor layer, in all the flexible layers is the first flexible layer, and the light reflection layer is located between any two layers of the laminated structures between the semiconductor layer and the first flexible layer.
On the basis, an embodiment of the present application further provides a manufacturing method of an array film layer, which is used for manufacturing and forming the array film layer, and the manufacturing method includes:
manufacturing and forming a light reflecting layer on the supporting film layer;
manufacturing and forming a semiconductor layer on one side, far away from the support film layer, of the light reflection layer, wherein the semiconductor layer is manufactured and formed on the basis of a photosensitive material and is used for forming a transistor array;
wherein the light reflecting layer is used for preventing target light transmitted to the semiconductor layer from one side of the light reflecting layer far away from the semiconductor layer from entering the semiconductor layer.
In a preferred option of the embodiment of the present invention, in the method for manufacturing an array film, the step of manufacturing a light reflecting layer on a support film includes:
determining reflection structure information of a light reflection layer to be fabricated based on the optical information of the target light;
and manufacturing and forming a light reflection layer on the support film layer based on the reflection structure information.
In a preferred option of the embodiment of the present application, in the method for manufacturing an array film, the array film is applied to an electronic device including an optical sensor, the optical sensor is configured to collect an optical signal passing through the array film, and the step of determining the reflective structure information of the light reflective layer to be manufactured based on the optical information of the target light includes:
determining Bragg reflection wavelength information based on the waveband information of the target light and the waveband information of the optical signal, wherein the Bragg reflection wavelength information belongs to the waveband information of the target light and does not belong to the waveband information of the optical signal, and the light reflection layer is of a distributed Bragg reflector structure;
determining reflection structure information of the light reflection layer based on the Bragg reflection wavelength information.
In a preferable selection of the embodiment of the present application, in the method for manufacturing an array film, the step of determining the reflection structure information of the light reflection layer based on the bragg reflection wavelength information includes:
determining thickness information and refractive index information of each reflective structure layer included in the distributed Bragg reflector structure based on the Bragg reflection wavelength information, wherein the distributed Bragg reflector structure comprises at least one double reflective structure layer, each double reflective structure layer comprises at least one first reflective structure layer and at least one second reflective structure layer, and the refractive index information of the first reflective structure layer is different from the refractive index information of the second reflective structure layer;
and determining a target layer number based on the thickness information of each reflecting structure layer, the predetermined thickness information and the predetermined reflectivity information of the light reflecting layer, wherein the target layer number is the layer number of a first reflecting structure layer and a second reflecting structure layer included in the distributed Bragg reflector structure, and the reflecting structure information comprises the target layer number, the thickness information and the refractive index information of each reflecting structure layer.
On the basis, an embodiment of the present application further provides an electronic device, including:
the array film layer;
the electroluminescent device layer is positioned on one side of the semiconductor layer, which is far away from the light reflection layer, and emits light based on the driving of the array film layer;
the optical sensor is positioned on one side of the array film layer, which is far away from the electroluminescent device layer, and is used for collecting optical signals which sequentially penetrate through the electroluminescent device layer and the array film layer.
According to the array film layer, the manufacturing method of the array film layer and the electronic device, the light reflection layer is arranged on one side of the semiconductor layer formed on the basis of the photosensitive material, so that target light transmitted to the semiconductor layer from one side, far away from the semiconductor layer, of the light reflection layer can be prevented from entering the semiconductor layer. Therefore, due to the existence of the light reflecting layer, the target light can be prevented from entering the semiconductor layer, so that less target light can enter the semiconductor layer, the problem that the electrical property is poor under the radiation of more target light because the semiconductor layer is manufactured and formed on the basis of photosensitive materials is solved, the electrical property of the conventional transistor device is improved, and the transistor device has high practical value.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a schematic structural diagram of a conventional electronic device.
Fig. 2 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Fig. 3 is a schematic structural diagram of an array film layer according to an embodiment of the present disclosure.
Fig. 4 is a second schematic structural diagram of an array film layer according to an embodiment of the present disclosure.
Fig. 5 is a schematic structural diagram of a transistor with a top-gate structure according to an embodiment of the present disclosure.
Fig. 6 is a schematic structural diagram of a transistor with a bottom-gate structure according to an embodiment of the present disclosure.
Fig. 7 is a schematic structural diagram of an array film layer without a double reflective structure layer according to an embodiment of the present disclosure.
Fig. 8 is a schematic structural diagram of an array film layer having a dual reflective structure layer according to an embodiment of the present disclosure.
Fig. 9 is a schematic structural diagram of an array film layer having two dual reflective structure layers according to an embodiment of the present disclosure.
Fig. 10 is a simulation comparison diagram of absorption rate based on the film layer structures shown in fig. 7-9 according to an embodiment of the present application.
Fig. 11 is a simulation comparison diagram for reflectivity based on the film layer structures shown in fig. 7 to 9 according to an embodiment of the present application.
Fig. 12 is a simulation comparison diagram of transmittance based on the film layer structures shown in fig. 7 to 9 according to an embodiment of the present application.
Icon: 10-an electronic device; 100-array film layer; 110-a light reflecting layer; 111-a first reflective structure layer; 113-a second reflective structure layer; 130-a semiconductor layer; 141-a gate metal layer; 142-a source metal layer; 143-a drain metal layer; 144-a gate insulating layer; 150-a support membrane layer; 200-an electroluminescent device layer; 300-optical sensor.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
As shown in fig. 1, a conventional electronic device is shown that may include an array film layer, an electroluminescent device layer, and an optical sensor. Wherein the array film layer is located between the electroluminescent device layer and the optical sensor.
Based on this, in one aspect, the electron light emitting device layer may emit light based on driving of a transistor device (e.g., a thin film transistor TFT) included in the array film layer. On the other hand, the optical sensor can collect optical signals sequentially passing through the electroluminescent device layer and the array film layer, so that corresponding functions such as fingerprint identification and the like are realized. In order to enable the optical sensor to collect the optical signal, a through hole corresponding to the optical sensor is generally formed in other structural layers between the optical sensor and the array film layer, for example, the structural layers for heat dissipation, heat conduction, and the like, so as to form a transmission channel of the optical signal.
However, through long-term research by the inventors of the present application, it is found that, due to the existence of the through hole, during the manufacturing of the array film layer, target light, such as para-light or ambient light, transmitted from the side of the through hole away from the array film layer to the direction close to the array film layer can be transmitted to the semiconductor layer in the array film layer through the through hole. In this way, since the semiconductor layer is formed based on a photosensitive material, electrical performance may be deteriorated under irradiation of target light, so that device performance of a transistor formed based on the semiconductor layer may be reduced, and device performance of the electronic device may be reduced.
It should be noted that, based on the creative work of the inventors of the present application, it could be found that the reason why the device performance of the electronic device is degraded is that a large amount of the para-light, the ambient light, or the like radiates the semiconductor layer in the electronic device, so that the electrical performance of the semiconductor layer is degraded.
Based on this, in order to overcome the above technical problem, the inventors of the present application provide an electronic device 10 in conjunction with fig. 2. The electronic device 10 may include, among other things, an array film layer 100, an electroluminescent device layer 200, and an optical sensor 300.
In detail, the array film layer 100 includes a light reflecting layer 110 and a semiconductor layer 130, and the light reflecting layer 110 is located on one side of the semiconductor layer 130. The electroluminescent device layer 200 is located on a side of the semiconductor layer 130 away from the light reflecting layer 110, and emits light based on driving of the array film layer 100, for example, light emitting display can be performed. The optical sensor 300 is located on a side of the array film layer 100 far from the electroluminescent device layer 200, and is configured to collect optical signals sequentially passing through the electroluminescent device layer 200 and the array film layer 100, for example, optical signals reflected by a fingerprint of a user of the electronic device 10, and after sequentially passing through the electroluminescent device layer 200 and the array film layer 100, the optical signals are collected by the optical sensor 300, so as to implement fingerprint identification.
Referring to fig. 3, an array film 100 is provided in the present embodiment, which can be applied to the electronic device 10. The array film layer 100 may include a light reflecting layer 110 and a semiconductor layer 130.
In detail, the light reflecting layer 110 may be on the support film layer 150. The semiconductor layer 130 may be located on a side of the light reflecting layer 110 away from the supporting film layer 150, and the semiconductor layer 130 is formed based on a photosensitive material for forming a transistor array. The light reflecting layer 110 is used to block the target light transmitted from the side of the light reflecting layer 110 away from the semiconductor layer 130 to the side of the light reflecting layer 110 close to the semiconductor layer 130 from entering the semiconductor layer 130.
Based on the above arrangement, due to the existence of the light reflecting layer 110, the target light can be prevented from entering the semiconductor layer 130, so that the problem that the electrical property is deteriorated under the radiation of the target light because the semiconductor layer 130 is formed based on the photosensitive material is solved, and the problem that the electrical property is poor in the existing transistor device is solved.
In the first aspect, it should be noted that, for the light reflecting layer 110, a specific structure of the light reflecting layer 110 is not limited, and may be selected according to practical application requirements.
For example, in an alternative example, in conjunction with fig. 4, the light reflecting layer 110 may include at least one first reflective structure layer 111 and at least one second reflective structure layer 113.
In detail, the at least one first reflective structure layer 111 is located on one side of the semiconductor layer 130 close to the support film layer 150. The at least one second reflective structure layer 113 is located on one side of the semiconductor layer 130 close to the support film layer 150. The refractive index of the first reflective structure layer 111 is different from that of the second reflective structure layer 113, so that a Distributed Bragg Reflector (DBR) structure may be formed.
The distributed bragg reflector may refer to a structure formed by alternately stacking film layer structures with different refractive indexes.
Optionally, the number relationship between the first reflective structure layer 111 and the second reflective structure layer 113 is not limited, and may be selected according to the actual application requirement.
For example, in an alternative example, the number of the first reflective structure layer 111 and the second reflective structure layer 113 is different, such as the difference between the number of the first reflective structure layer 111 and the number of the second reflective structure layer 113 is 1. Thus, after being alternately arranged, the first reflective structure layer 111, the second reflective structure layer 113, and the first reflective structure layer 111 may be formed.
For another example, in another alternative example, in order to form the dbr having a high light reflection effect, the first reflective structure layer 111 and the second reflective structure layer 113 are the same in number. Thus, after being alternately arranged, the first reflective structure layer 111, the second reflective structure layer 113, the first reflective structure layer 111, and the second reflective structure layer 113 may be formed.
That is, in the above example, the light reflection layer 110 may include at least one double reflection structure layer, and each of the double reflection structure layers may include the first reflection structure layer 111 and the second reflection structure layer 113. The at least one dual reflective structure layer may be located on the same side of the semiconductor layer 130, such as on a side of the semiconductor layer 130 close to the supporting film 150.
Alternatively, the specific number of the double reflective structure layers is not limited, and may be, for example, 1, 2, 3, 4, etc. When the dual reflective structure layer is multiple, a stacked structure in which the first reflective structure layer 111 and the second reflective structure layer 113 are alternately arranged may be sequentially stacked, for example, in the stacked structure, the odd number layers may be the first reflective structure layer 111, and the even number layers may be the second reflective structure layer 113, or in the stacked structure, the odd number layers may be the second reflective structure layer 113, and the even number layers may be the first reflective structure layer 111.
Optionally, the specific material of the double reflective structure layer is not limited, for example, the material for making the double reflective structure layer may include at least one of the following materials:
silicon (Si), silicon oxide, silicon nitride, titanium (Ti) oxide, titanium nitride, tungsten (W) oxide, tungsten nitride, molybdenum (Mo) oxide, molybdenum nitride, aluminum (Al) oxide, aluminum nitride, tantalum (Ta) oxide, tantalum nitride, and the like.
It is understood that, on the basis of the above example, in order to make the first reflective structure layer 111 and the second reflective structure layer 113 included in the double reflective structure layer have different refractive indexes, the first reflective structure layer 111 and the second reflective structure layer 113 may have different parameters.
For example, in an alternative example, the first reflective structure layer 111 and the second reflective structure layer 113 may be made of different materials to form different refractive indexes.
For another example, in another alternative example, the first reflective structure layer 111 and the second reflective structure layer 113 may be made of the same material, but may have different structures to form different refractive indexes.
On the basis of the above example, it should be noted that, for the light reflecting layer 110, the reflection wavelength band of the light reflecting layer 110 can be determined by combining the wavelength band of the target light and the wavelength band of the optical signal that the optical sensor 300 needs to collect, so that the light reflecting layer 110 can sufficiently reflect the target light and can effectively transmit the optical signal, and the optical sensor 300 can efficiently collect the optical signal while ensuring the electrical performance of the semiconductor layer 130.
In the second aspect, it is noted that, for the semiconductor layer 130, a specific configuration of the semiconductor layer 130 is not limited, and may be selected according to a practical application requirement.
For example, in an alternative example, the semiconductor layer 130 may be a polysilicon (p-Si) material layer, such as Low Temperature Polysilicon (LTPS), wherein the polysilicon material has a narrow band gap and high photosensitivity and is easily affected by light radiation.
For another example, in another alternative example, the semiconductor layer 130 may be an Amorphous-Silicon (a-Si) material layer or an oxide semiconductor material layer.
It is understood that, in some specific application examples, the semiconductor layer 130 may also be referred to as a channel layer, an active layer, or the like.
In the third aspect, it should be noted that, for the support film layer 150, the support film layer 150 may be used as a part of the array film layer 100, or may be used as another structural layer besides the array film layer 100, and is not limited herein.
On the basis of the above example, it should be further noted that, for the array film layer 100, in order to form the transistor array, the array film layer 100 may further include a metal layer and an insulating layer.
Optionally, the forming positions of the metal layer and the insulating layer are not limited, and may be selected according to the type of transistors included in the transistor array to be formed.
For example, in an alternative example, in conjunction with fig. 5, the transistor may be a bottom gate structure, and the metal layers include a gate metal layer 141, a source metal layer 142, and a drain metal layer 143, and the insulating layer may include a gate insulating layer 144. The gate metal layer 141 may be located on a side of the semiconductor layer 130 close to the light reflecting layer 110.
In this example, since the gate metal layer 141 is located on a side of the semiconductor layer 130 close to the light reflecting layer 110, that is, when the target light is transmitted to the semiconductor layer 130, at least a part of the target light reaches the gate metal layer 141, so that the gate metal layer 141 can cooperate with the light reflecting layer 110 to reflect the target light, thereby achieving a reliable obstruction to the transmission of the target light.
For another example, in another alternative example, in conjunction with fig. 6, the transistor may be a top gate structure, and the metal layers include a gate metal layer 141, a source metal layer 142, and a drain metal layer 143, and the insulating layer may include a gate insulating layer 144. The gate metal layer 141 may be located on a side of the semiconductor layer 130 away from the light reflecting layer 110.
In this example, since the gate metal layer 141 is located on a side of the semiconductor layer 130 away from the light reflecting layer 110, that is, the target light does not pass through the gate metal layer 141 when being transmitted to the semiconductor layer 130, so that more target light can be transmitted to the semiconductor layer 130, the light reflecting layer 110 can effectively block the transmission of the target light.
Based on the above example, it should be further noted that, for the array film layer 100, on the side of the semiconductor layer 130 away from the light reflection layer 110, the array film layer 100 may further include other functional layers.
For example, in an alternative example, the array film layer 100 may further include an organic Planarization (PLN) layer, an Anode (Anode) layer, a Pixel Definition (PDL) layer, an isolation pillar (SPC), and the like, which are sequentially stacked, and the corresponding specific structures thereof are not particularly limited herein.
Based on the above example, it should be further noted that, for the array film layer 100, on the side of the semiconductor layer 130 close to the light reflecting layer 110, the array film layer 100 may further include other functional layers.
For example, in an alternative example, the array film layer 100 may further include a buffer layer and at least one stacked layer structure. The buffer layer may be located on a side of the semiconductor layer 130, and the at least one stacked structure may be located on a side of the buffer layer away from the semiconductor layer 130.
In detail, each of the laminated structures may include a barrier layer and a flexible layer. The flexible layer is located on one side of the barrier layer away from the buffer layer, the flexible layer farthest from the semiconductor layer 130 in all the flexible layers is a first flexible layer, and the light reflection layer is located between any two layers of the layered structure between the semiconductor layer 130 and the first flexible layer. With such an arrangement, the light reflecting layer 110 can have a better blocking effect on the target light, so as to fully ensure better electrical performance of the formed transistor.
For example, in a specific application example, a first flexible layer, a light reflective layer 110, a first barrier layer, a second flexible layer, a second barrier layer, and a buffer layer may be sequentially included on the support film layer 150. In the above example, the semiconductor layer 130 is formed on a surface of the buffer layer away from the second barrier layer, corresponding to the top gate structure.
The embodiment of the present application further provides a manufacturing method of the array film 100, which can be used for manufacturing and forming the array film 100. The manufacturing method can comprise the following steps:
manufacturing a light reflecting layer 110 on the supporting film layer 150; a semiconductor layer 130 is formed on the side of the light reflecting layer 110 away from the supporting film layer 150.
The light reflecting layer 110 is used for preventing target light transmitted from a side of the light reflecting layer 110 away from the semiconductor layer 130 to the semiconductor layer 130 from entering the semiconductor layer 130, and the semiconductor layer 130 is made of a photosensitive material and used for forming a transistor array.
In the first aspect, as for the step of forming the light reflecting layer 110, it should be noted that the specific implementation process of the step is not limited, and can be selected according to the requirements of practical applications.
For example, in an alternative example, in order to perform effective transmission blocking on the target light, the light reflection layer 110 may be formed based on the following steps:
first, the reflection structure information of the light reflection layer 110 to be fabricated may be determined based on the optical information of the target light; next, the light reflecting layer 110 formed on the supporting film layer 150 may be fabricated based on the reflective structure information.
That is, optical information of the target light may be determined first, and then, in order to be able to effectively block the transmission of the target light, reflection structure information of the light reflection layer 110 may be determined based on the optical information. Finally, the light reflection layer 110 may be formed based on the reflection structure information.
Optionally, in the above example, when determining the reflection structure information, a specific application scenario of the array film layer 100 to be fabricated may be further combined.
For example, in an alternative example, the optical reflection layer 110 is a distributed bragg reflector structure, and the array film 100 is applied to an electronic device 10 including an optical sensor 300, wherein the optical sensor 300 is used for collecting an optical signal passing through the array film 100, such as fingerprint identification based on reflected light of a fingerprint.
Based on this, the reflection structure information may be determined based on the following steps:
first, bragg reflected wavelength information may be determined based on the band information of the target light and the band information of the optical signal; next, the reflection structure information of the light reflection layer 110 may be determined based on the bragg reflection wavelength information.
That is, the wavelength band information of the target light and the wavelength band information of the optical signal may be determined first, and then the bragg reflected wavelength information of the distributed bragg mirror structure may be determined based on the two wavelength band information. Finally, the reflection structure information of the light reflection layer 110 may be determined based on the bragg reflection wavelength information.
Wherein the bragg reflected wavelength information belongs to band information of the target light and does not belong to band information of the optical signal. In this way, it is ensured that the optical reflection structure formed based on the bragg reflected wavelength information can effectively transmit the optical signal and effectively block the target light, that is, the optical sensor 300 can effectively acquire the optical signal and also block the target light from being transmitted to the semiconductor layer 130.
It is to be understood that, in the above example, a specific manner of determining the reflection structure information based on the bragg reflected wavelength information is not limited.
For example, in an alternative example, the distributed bragg reflector structure includes at least one first reflective structure layer 111 and at least one second reflective structure layer 113, and refractive index information of the first reflective structure layer 111 is different from refractive index information of the second reflective structure layer 113. Based on this, the reflection structure information may be determined based on the bragg reflected wavelength information by:
first, thickness information and refractive index information of each reflective structure layer included in the distributed bragg reflector structure may be determined based on the bragg reflected wavelength information; next, a target number of layers may be determined based on thickness information of each reflective structure layer, thickness information of the light reflective layer 110 and reflectivity information determined in advance.
The target layer number is the number of layers of a first reflective structure layer and a second reflective structure layer included in the distributed bragg reflector structure, and the reflective structure information includes the target layer number, thickness information and refractive index information of each reflective structure layer.
In the second aspect, for the step of forming the semiconductor layer 130, the specific implementation process is not limited in detail herein, and for example, the selection may be made in combination with each related functional layer included in the array film layer 100 in the foregoing example, as explained in combination with the array film layer 100 in the foregoing example.
On the basis of the above examples, in order to comparatively explain the effects of fabricating the formed light reflection layer 110, the embodiments of the present application also provide a set of optical simulation comparative examples.
In the above optical simulation comparison example, a first flexible layer (PI 1 layer shown in fig. 7), a first barrier layer (BL 1 layer shown in fig. 7), a second flexible layer (PI 2 layer shown in fig. 7), a second barrier layer (BL 2 layer shown in fig. 7), and a buffer layer (Bu layer shown in fig. 7) are sequentially formed on the supporting film layer 150. The material of the support film layer 150 is Polyimide (PET), the material of the first flexible layer and the second flexible layer is Polyimide (PI), and the material of the first barrier layer and the second barrier layer are silicon oxide (SiO)x) And amorphous silicon (a-Si).
Referring to fig. 7, in a first example, the array film layer 100 does not include the light reflecting layer 110. Referring to fig. 8, in a second example, the array film layer 100 includes a double reflective structure layer between the first flexible layer and the first barrier layer. In a third example, in conjunction with fig. 9, the array film layer 100 includes two dual reflective structure layers between the first flexible layer and the first barrier layer. Also, in the second and third examples, each of the dual reflective structure layers includes the first reflective structure layer 111 of silicon oxide having a thickness of 90-110nm, and the second reflective structure layer 113 of silicon nitride having a thickness of 50-70 nm. Thus, a distributed Bragg reflector structure with a Bragg reflection wavelength of 460nm can be formed.
Based on the array film layer 100 corresponding to the above three examples, optical simulation can be performed to determine:
the absorption rates of the array film layer 100 having the double reflective structure layer and the array film layer 100 not having the double reflective structure layer are substantially the same in the visible light band, as shown in fig. 10;
in the wavelength band of 420-580nm, the reflectivity of the array film 100 with two dual-reflective structure layers is significantly improved, the average reflectivity is about 43.02%, which is higher than the reflectivity of the array film 100 with one dual-reflective structure layer (the average reflectivity is about 30.45%), which is higher than the reflectivity of the array film 100 without the dual-reflective structure layer (the average reflectivity is about 13.59%), as shown in fig. 11;
in the visible light band, the transmittance and the reflectance have opposite trend, for example, the transmittance of the array film 100 with two double reflective structure layers is the lowest in the blue light band, as shown in fig. 12.
In summary, according to the array film layer, the manufacturing method of the array film layer, and the electronic device provided by the present application, the light reflection layer 110 is disposed on one side of the semiconductor layer 130 formed based on the photosensitive material, so that the target light transmitted from the side of the light reflection layer 110 away from the semiconductor layer 130 to the semiconductor layer 130 can be prevented from entering the semiconductor layer 130. Therefore, the light reflecting layer 110 can prevent the target light from entering the semiconductor layer 130, so as to improve the problem that the electrical property of the semiconductor layer 130 is deteriorated under the radiation of the target light due to the formation of the semiconductor layer based on the photosensitive material, and further improve the electrical property of the conventional transistor device, thereby having higher practical value.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. An array film, comprising:
a light reflecting layer on the support film layer;
the semiconductor layer is positioned on one side, away from the support film layer, of the light reflection layer, and is made of photosensitive materials and used for forming a transistor array;
wherein the light reflecting layer is used for preventing target light transmitted to the semiconductor layer from one side of the light reflecting layer far away from the semiconductor layer from entering the semiconductor layer.
2. The array film layer of claim 1, wherein the light reflecting layer comprises:
at least one first reflecting structure layer, wherein the at least one first reflecting structure layer is positioned on one side of the semiconductor layer close to the supporting film layer;
at least one second reflecting structure layer, wherein the at least one second reflecting structure layer is positioned on one side of the semiconductor layer close to the supporting film layer;
and the refractive index of the first reflecting structure layer is different from that of the second reflecting structure layer, so that a distributed Bragg reflector structure is formed.
3. The array film layer of claim 2, wherein the first reflective structure layer and the second reflective structure layer are made of different materials, and the materials for making the first reflective structure layer and the second reflective structure layer comprise at least one of the following materials:
silicon, an oxide of silicon, a nitride of silicon, an oxide of titanium, a nitride of titanium, an oxide of tungsten, a nitride of tungsten, an oxide of molybdenum, a nitride of molybdenum, an oxide of aluminum, a nitride of aluminum, an oxide of tantalum, and a nitride of tantalum.
4. The array film layer of any one of claims 1-3, further comprising:
the grid metal layer is positioned on one side, far away from the light reflection layer, of the semiconductor layer, and the grid metal layer and the semiconductor layer are used for forming the transistor array.
5. The array film layer of any one of claims 1-3, further comprising:
a buffer layer on one side of the semiconductor layer;
at least one laminated structure, wherein the at least one laminated structure is positioned on one side of the buffer layer away from the semiconductor layer;
each layer of the laminated structure comprises a blocking layer and a flexible layer, the flexible layer is located on one side, far away from the buffer layer, of the blocking layer, the flexible layer, which is the farthest away from the semiconductor layer, in all the flexible layers is a first flexible layer, and the light reflection layer is located between any two layers of laminated structures between the semiconductor layer and the first flexible layer.
6. A method for manufacturing an array film, the method being used for manufacturing and forming the array film of any one of claims 1-5, the manufacturing method comprising:
manufacturing and forming a light reflecting layer on the supporting film layer;
manufacturing and forming a semiconductor layer on one side, far away from the support film layer, of the light reflection layer, wherein the semiconductor layer is manufactured and formed on the basis of a photosensitive material and is used for forming a transistor array;
wherein the light reflecting layer is used for preventing target light transmitted to the semiconductor layer from one side of the light reflecting layer far away from the semiconductor layer from entering the semiconductor layer.
7. The method for forming an array film according to claim 6, wherein the step of forming the light reflecting layer on the supporting film comprises:
determining reflection structure information of a light reflection layer to be fabricated based on the optical information of the target light;
and manufacturing and forming a light reflection layer on the support film layer based on the reflection structure information.
8. The method for manufacturing an array film layer according to claim 7, wherein the array film layer is applied to an electronic device including an optical sensor for collecting an optical signal passing through the array film layer, and the step of determining the reflective structure information of the optical reflection layer to be manufactured based on the optical information of the target light includes:
determining Bragg reflection wavelength information based on the waveband information of the target light and the waveband information of the optical signal, wherein the Bragg reflection wavelength information belongs to the waveband information of the target light and does not belong to the waveband information of the optical signal, and the light reflection layer is of a distributed Bragg reflector structure;
determining reflection structure information of the light reflection layer based on the Bragg reflection wavelength information.
9. The method for manufacturing an array film according to claim 8, wherein the step of determining the reflection structure information of the light reflection layer based on the bragg reflection wavelength information comprises:
determining thickness information and refractive index information of each reflective structure layer included in the distributed Bragg reflector structure based on the Bragg reflection wavelength information, wherein the distributed Bragg reflector structure comprises at least one first reflective structure layer and at least one second reflective structure layer, and the refractive index information of the first reflective structure layer is different from the refractive index information of the second reflective structure layer;
and determining a target layer number based on the thickness information of each reflecting structure layer, the predetermined thickness information and the predetermined reflectivity information of the light reflecting layer, wherein the target layer number is the layer number of a first reflecting structure layer and a second reflecting structure layer included in the distributed Bragg reflector structure, and the reflecting structure information comprises the target layer number, the thickness information and the refractive index information of each reflecting structure layer.
10. An electronic device, comprising:
the array film layer of any one of claims 1-5;
the electroluminescent device layer is positioned on one side of the semiconductor layer, which is far away from the light reflection layer, and emits light based on the driving of the array film layer;
the optical sensor is positioned on one side of the array film layer, which is far away from the electroluminescent device layer, and is used for collecting optical signals which sequentially penetrate through the electroluminescent device layer and the array film layer.
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