CN113035790B - Welding base and power semiconductor module - Google Patents
Welding base and power semiconductor module Download PDFInfo
- Publication number
- CN113035790B CN113035790B CN201911347198.XA CN201911347198A CN113035790B CN 113035790 B CN113035790 B CN 113035790B CN 201911347198 A CN201911347198 A CN 201911347198A CN 113035790 B CN113035790 B CN 113035790B
- Authority
- CN
- China
- Prior art keywords
- welding base
- welding
- power semiconductor
- semiconductor module
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003466 welding Methods 0.000 title claims abstract description 136
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 229910000679 solder Inorganic materials 0.000 claims description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 26
- 229910052802 copper Inorganic materials 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 239000011135 tin Substances 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 description 18
- 230000009286 beneficial effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 8
- 230000002349 favourable effect Effects 0.000 description 5
- 241001391944 Commicarpus scandens Species 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Abstract
The application provides a welding base and a power semiconductor module, and relates to the technical field of power module manufacturing. The welding base comprises a tubular main body, wherein a first end and a second end of the main body are respectively provided with a first annular flange and a second annular flange which are perpendicular to the outer wall of the main body and extend outwards. The annular boss is arranged on the end face of the welding base, so that the welding joint surface area of the welding base and the copper-clad layer on the lining plate is increased, and the falling-off of the welding base is avoided. The power semiconductor module comprises the welding base.
Description
Technical Field
The present disclosure relates to power modules, and particularly to a welding base and a power semiconductor module.
Background
An insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, abbreviated as "IGBT") is a fully-controlled power semiconductor device, and an auxiliary signal pin can be connected to an IGBT power semiconductor module and a driving circuit board on the upper layer thereof to realize gate drive control or detection protection, so that the power semiconductor module is usually provided with the auxiliary signal pin. At present, the mounting manner of the integrated package is used in a large amount, and the auxiliary signal pin needs to be embedded into the side frame 10 of the power semiconductor module as shown in fig. 1, so that the copper-clad layer of the auxiliary control electrode of the power semiconductor module needs to extend to the side frame 10 and needs to be connected by using a bonding wire. The copper-clad layer occupies the effective utilization area of the lining plate, so that the power density of the power semiconductor module is difficult to maximally improve. Meanwhile, as the bonding wire has low vibration tolerance capability and is easy to break during vibration, the power semiconductor module cannot be suitable for high vibration environments such as an electric drive controller of a three-in-one or multiple-in-one vehicle.
In order to maximize the power density of the power semiconductor module and reduce the area of the copper clad layer, the welding base 20 is widely focused and used, and as shown in fig. 2, the welding base 20 has an i-shaped structure, and square auxiliary signal pins are in interference fit with the inner wall of the welding base 20, thereby connecting the auxiliary signal pins and the backing plate. However, since the end of the soldering base 20 has a planar structure, it is difficult for the solder to form a sufficient bonding surface with the solder during soldering, and thus the soldering effect is poor and the solder is liable to fall off.
Disclosure of Invention
To the above-mentioned problem among the prior art, this application has proposed a welding base and power semiconductor module. The annular boss is arranged on the end face of the welding base, so that the welding joint surface area of the welding base and the copper-clad layer on the lining plate is increased, and the falling-off of the welding base is avoided.
In a first aspect, the invention provides a welding base comprising a tubular body, the first and second ends of the body being provided with first and second annular flanges respectively extending outwardly perpendicular to the outer wall of the body, an annular boss being provided on a flange surface of at least one of the first and second annular flanges remote from the body. By utilizing the welding base, the welding joint surface area of the copper-clad layer on the welding base and the lining plate can be increased, the welding strength is improved, and the falling of the welding base is avoided.
In an embodiment of the first aspect, a connection between the inner wall of the main body and the annular boss is provided with a radius. Through this embodiment, be favorable to the solder to pile up upwards gradually along the surface of rounding to be favorable to the inboard of solder inflow annular boss, increase the welding base and the welding joint face area of welt upper copper coating, improved welding strength, be favorable to avoiding the whereabouts of welding base.
In one embodiment of the first aspect, the radius of the radius is between 0.1 and 0.5 millimeters. By the embodiment, a large enough accommodating space can be provided for the solder, so that the area of a welding joint surface of the welding base and the copper-clad layer on the lining plate is increased, and the welding strength is improved; the stability of the welding base can be maintained, and the welding base is beneficial to avoiding shaking or tilting after welding in the welding process.
In one embodiment of the first aspect, the weld base is made of copper or a copper alloy. By the embodiment, convenience is provided for selecting the solder.
In one embodiment of the first aspect, the inner wall of the body has a nickel plating; the flange surface has a silver, tin or gold plating. By the embodiment, the nickel plating layer can play a role of solder resist, and the solder is prevented from being accumulated to the inner wall of the main body from the round position; and the solder is easy to combine with silver, tin or gold plating layers, which is favorable for firmly fixing the welding base on the copper-clad layer through the flange surface.
In one embodiment of the first aspect, the height of the welding base is between 2.0 and 5.0 millimeters, the inner diameter of the body is between 0.6 and 1.0 millimeters, the outer diameter of the first annular flange or the outer diameter of the second annular flange is between 2.5 and 4.0 millimeters, the height of the annular boss is between 0.05 and 0.25 millimeters, the distance from the annular boss to the outer edge of the annular flange is between 0.05 and 1.50 millimeters, and the outer diameter of the annular boss is between 1.45 and 2.50 millimeters.
In a second aspect, the invention further provides a power semiconductor module, which comprises the welding base. By using the power semiconductor module, the annular boss is arranged on the end face of the welding base, so that the area of the welding joint surface of the welding base and the copper layer coated on the lining plate is increased, and the falling-off of the welding base is avoided; meanwhile, the auxiliary signal needle and the lining plate are prevented from being connected by the bonding wire, so that the power semiconductor module of the embodiment is beneficial to being suitable for high-vibration environments such as an electric drive controller of a three-in-one or multiple-in-one vehicle.
In one embodiment of the second aspect, the power semiconductor module includes a substrate, a backing plate, and a copper-clad layer stacked in order, and the soldering base is soldered to the copper-clad layer. With this embodiment, it is advantageous that the power semiconductor module is able to conduct auxiliary signals outwards.
In one embodiment of the second aspect, the power semiconductor module further comprises an auxiliary signal pin inserted in the hollow cavity of the main body, wherein the auxiliary signal pin has a circular cross-sectional shape and is in clearance fit with the hollow cavity; alternatively, the cross section of the auxiliary signal needle is square, and the auxiliary signal needle is in interference fit with the hollow cavity. With this embodiment, it is advantageous that the power semiconductor module is able to conduct auxiliary signals outwards.
In one embodiment of the second aspect, the power semiconductor module is an insulated gate bipolar transistor module. According to the embodiment, the IGBT module adopts the welding base, and the annular boss is arranged on the end face of the welding base, so that the area of the welding joint surface of the welding base and the copper-clad layer on the lining plate is increased, the falling of the welding base is avoided, the auxiliary signal needle can be better fixed, and the IGBT module can conduct auxiliary signals outwards; meanwhile, the bonding wire is prevented from being used for connecting the auxiliary signal needle and the lining plate, so that the IGBT module is beneficial to being suitable for high vibration environments such as an electric drive controller of a three-in-one or multiple-in-one vehicle.
Compared with the prior art, the welding base and the power semiconductor module have the following beneficial effects:
1. the annular boss is arranged on the end face of the welding base, so that the area of a welding joint surface of the welding base and the copper layer covered on the lining plate is increased, and the welding base is prevented from falling off;
2. the bonding wire is prevented from being used for connecting the auxiliary signal needle and the lining plate, so that the power semiconductor module is beneficial to being suitable for high vibration environments such as an electric drive controller of a three-in-one or multiple-in-one vehicle;
3. the auxiliary signal pin can be better fixed, and the power semiconductor module can conduct auxiliary signals outwards.
The above-described features may be combined in various suitable ways or replaced by equivalent features as long as the object of the present invention can be achieved.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings, in which:
FIG. 1 shows a schematic diagram of a prior art side frame;
FIG. 2 shows a schematic structural view of a prior art weld base;
FIG. 3 is a schematic perspective view showing a welding base according to an embodiment of the present invention;
FIG. 4 shows a schematic cross-sectional view of a weld base according to an embodiment of the invention;
FIG. 5 shows a schematic cross-sectional view of a welded base according to an embodiment of the present invention;
FIG. 6 shows a schematic illustration of the insertion of a weld base and an auxiliary signal pin according to an embodiment of the invention;
fig. 7 is a schematic view showing a partial structure of a power semiconductor module according to an embodiment of the present invention;
fig. 8 shows a schematic cross-sectional view of a power semiconductor module according to an embodiment of the invention.
Reference numerals:
10-side frames;
20-welding a base;
100-welding a base;
110-a body;
111-hollow cavity;
120-a first annular flange;
130-a second annular flange;
140-annular boss;
150-rounding;
400-solder;
500-pipe shells;
600-substrate;
700-lining board;
800-a copper-clad layer;
900-auxiliary signal pin.
In the drawings, like parts are designated with like reference numerals. The figures are not to scale.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
As shown in fig. 3 to 8, the present embodiment provides a welding base 100. As shown in fig. 3 and 4, the welding base 100 includes a tubular main body 110, a first end and a second end of the main body 110 are respectively provided with a first annular flange 120 and a second annular flange 130 extending outwardly perpendicular to an outer wall of the main body 110, and an annular boss 140 is provided on a flange surface of at least one of the first annular flange 120 and the second annular flange 130, which is remote from the main body 110.
The annular boss 140 increases the welding joint surface area of the welding base 100 and the copper layer 800 on the lining plate 700, improves the welding strength, and is beneficial to avoiding the falling of the welding base 100.
Since the annular boss 140 protrudes from the annular flange, an annular recess is formed at the outer side of the annular boss 140. In the soldering process, the liquid solder 400 may fill the annular recess, so as to increase the area of the joint surface between the solder 400 and the soldering base 100, improve soldering strength, and facilitate avoiding the detachment of the soldering base 100. After the soldering process is completed, as shown in fig. 5, the solder 400 is distributed in the annular recess outside the annular boss 140 and bonded to the outer side wall of the annular boss 140 and the bottom surface of the annular recess.
Because only one end of the welding base 100 needs to be welded with the copper layer 800 on the lining board 700, at least one of the first annular flange 120 and the second annular flange 130 needs to be provided with the annular boss 140, and the welding base 100 uses the annular flange provided with the annular boss 140 to be welded with the copper layer 800 on the lining board 700, so that the welding joint surface area of the welding base 100 and the copper layer 800 on the lining board 700 is increased, the welding strength is improved, and the falling of the welding base 100 is avoided.
When only one end of the welding base 100 is provided with the annular boss 140 and the end face of the other end is of a planar structure, the planar end face is easier to process, which is beneficial to reducing the production cost of the welding base 100. However, in the welding, it is necessary for a worker to select and identify the two end surfaces of the welding base 100, and to weld the copper layer 800 on the backing plate 700 using an annular flange having the annular boss 140.
When the annular bosses 140 are arranged at the two ends of the welding base 100, a worker can use any one end of the welding base 100 to be welded with the copper-clad layer 800 on the lining plate 700, and does not need to select and distinguish the two end faces of the welding base 100, so that the working efficiency is improved, and the situation that the end face of the planar structure is erroneously used to be welded with the copper-clad layer 800 on the lining plate 700 is avoided.
In this embodiment, the annular boss 140 is disposed on the end surface of the welding base 100, so that the area of the welding joint surface between the welding base 100 and the copper layer 800 on the lining board 700 is increased, the welding strength is improved, and the welding base 100 is advantageously prevented from falling off.
As shown in fig. 4, alternatively, a rounded portion 150 is provided at the junction of the inner wall of the main body 110 and the annular boss 140 of the present embodiment.
When the copper layer 800 is coated on the welding base 100 and the lining plate 700 in a welding connection manner, the arrangement of the rounding 150 is beneficial to gradually piling up the solder 400 along the surface of the rounding 150, so that the solder 400 can flow into the inner side of the annular boss 140, the welding joint surface area of the copper layer 800 coated on the welding base 100 and the lining plate 700 is increased, the welding strength is improved, and the falling-off of the welding base 100 can be avoided. After the soldering process is completed, as shown in fig. 5, the solder 400 is distributed inside the annular boss 140, and the surface of the radius 150 is covered with the solder 400.
The auxiliary signal pin 900 is inserted into the hollow cavity 111 of the main body 110 from the end of the welding base 100 far away from the copper-clad layer 800, and the end is provided with the round-down 150, so that the auxiliary signal pin 900 can be prevented from being scratched, and the auxiliary signal pin 900 can be guided to smoothly enter the hollow cavity 111 of the main body 110.
Alternatively, the radius of the radius 150 of the present embodiment is between 0.1 and 0.5 millimeters.
The radius of the radius 150 is too small to provide enough space for the solder 400, and is disadvantageous to increase the area of the welding joint surface between the welding base 100 and the copper-clad layer 800 on the backing plate 700, so that the welding strength is disadvantageous to increase, and the welding base 100 may be caused to fall off from the surface of the copper-clad layer 800 on the backing plate 700.
The radius of the radius 150 is too large, which may cause the end surface area of the annular boss 140 to be too small, which is not beneficial to maintaining the stability of the welding base 100 during the welding process, is not beneficial to the welding connection between the annular boss 140 and the copper-clad layer 800 on the liner 700, and may cause the welding base 100 to shake during the welding process or tilt after the welding is completed, which is not beneficial to the fixation of the welding base 100.
Thus, the radius of the chamfer is set between 0.1 and 0.5 mm: a large enough accommodating space can be provided for the solder 400, which is beneficial to increasing the welding joint surface area of the welding base 100 and the copper layer 800 on the lining plate 700 and improving the welding strength; stability of the welding base 100 can also be maintained, which is advantageous in preventing it from shaking during welding or tilting after welding.
Alternatively, the soldering base 100 of the present embodiment is made of copper or copper alloy. The welding base 100 is required to be fixed on the copper-clad layer 800, and the welding base 100 made of copper or copper alloy is welded with the copper-clad layer 800, so that the welding firmness is improved, and the welding flux 400 is only required to be matched with copper, so that the convenience is provided for selecting the welding flux 400.
Alternatively, the inner wall of the body 110 of the present embodiment has a nickel plating layer; the flange surface has a silver, tin or gold plating.
Since the solder 400 is not easy to combine with the nickel plating layer, the solder 400 can be prevented from being accumulated from the round 150 to the inner wall of the main body 110, and the solder 400 has a solder resisting effect, so that the solder 400 is limited to the round 150 and gathers at the round 150 to form a firm welding surface, thereby being beneficial to improving the welding strength and preventing the welding base 100 from falling off.
The flange surface has a silver, tin or gold plating layer, which facilitates the solder mount 100 being securely fastened to the copper-clad layer 800 because the solder 400 is easily bonded to the silver, tin or gold plating layer.
Optionally, the height of the welding base 100 of the present embodiment is between 2.0 and 5.0 mm, the inner diameter of the main body 110 is between 0.6 and 1.0 mm, the outer diameter of the first annular flange 120 or the outer diameter of the second annular flange 130 is between 2.5 and 4.0 mm, the height of the annular boss 140 is between 0.05 and 0.25 mm, the distance from the annular boss 140 to the outer edge of the annular flange is between 0.05 and 1.50 mm, and the outer diameter of the annular boss 140 is between 1.45 and 2.50 mm.
The height of the welding base 100 is mainly determined by the height of the auxiliary signal pin 900, so that the auxiliary signal pin 900 needs to be ensured not to shake. The inner diameter of the body 110 of the weld base 100 is primarily adapted to the cross-sectional dimensions of the auxiliary signal pin 900 and thus depends on the cross-sectional dimensions of the auxiliary signal pin 900. The outer diameter of the first annular flange 120 or the outer diameter of the second annular flange 130 is mainly dependent on the height of the welding base 100, and the greater the height of the welding base 100, the greater the outer diameter of the first annular flange 120 or the outer diameter of the second annular flange 130 in order to secure the stability of the welding base 100.
The height of the annular boss is too large, so that the solder 400 cannot be sufficiently combined with the bottom surface of the annular recess formed at the outer side of the annular boss 140, and the area of the combining surface between the solder 400 and the soldering base 100 is reduced, which is not beneficial to avoiding the falling-off of the soldering base 100. The annular boss 140 has a height too small to provide a large enough space for the solder 400, and is disadvantageous in increasing the area of the bonding surface between the bonding pad 100 and the copper layer 800 on the backing plate 700. Therefore, the height of the annular boss 140 is between 0.05 and 0.25 mm, so that the solder 400 and the bottom surface of the annular recess can be fully combined, and a large enough accommodating space can be provided for the solder 400, so that the area of the welding joint surface between the welding base 100 and the copper layer 800 on the lining plate 700 is increased, and the falling-off of the welding base 100 can be avoided.
The distance from the annular boss 140 to the outer edge of the annular flange is between 0.05 and 1.50 mm, the outer diameter of the annular boss 140 is between 1.45 and 2.50 mm, and the outer diameter of the annular flange is between 2.5 and 4.0 mm, which is advantageous in providing a sufficiently large accommodation space for the solder 400 located outside the annular boss 140.
As shown in fig. 7 and 8, the present embodiment also provides a power semiconductor module including the above-described soldering base 100.
Because the power semiconductor module adopts the welding base 100, the annular boss 140 is arranged on the end surface of the welding base 100, thereby increasing the welding joint surface area of the welding base 100 and the copper layer 800 on the lining plate 700, and being beneficial to avoiding the falling of the welding base 100.
The bonding wire has low vibration tolerance and is easy to break during vibration, so that the power semiconductor module adopting the bonding wire to connect the auxiliary signal pin 900 and the lining plate 700 cannot be suitable for high vibration environments such as an electric drive controller of a three-in-one or multiple-in-one vehicle. Since the welding base 100 is used to connect the auxiliary signal pin 900 and the lining board 700 in this embodiment, the use of bonding wires to connect the auxiliary signal pin 900 and the lining board 700 is avoided, so that the power semiconductor module of this embodiment is advantageously applicable to high vibration environments such as an electric drive controller of a three-in-one or multiple-in-one vehicle.
As shown in fig. 8, alternatively, the power semiconductor module of the present embodiment includes a substrate 600, a backing plate 700, and a copper clad layer 800 stacked in this order, and the soldering base 100 is soldered to the copper clad layer 800.
Wherein the substrate 600 may be, but is not limited to being, made of copper or aluminum silicon carbide (AlSiC). Alternatively, the backing plate 700 is a ceramic backing plate 700, which may be, but is not limited to, made of an insulating ceramic such as alumina, aluminum nitride, or silicon nitride. Alternatively, the die may be soldered to the backing plate 700, which may be an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, simply "IGBT") die.
The soldering base 100 is soldered with the copper-clad layer 800, thereby connecting the auxiliary signal pin 900 and the backing plate 700, so that the power semiconductor module can externally conduct auxiliary signals.
Since the welding base 100 can be arranged at any position of the copper-clad layer 800 on the lining plate 700 without being limited by the structure of the side frame, the welding base 100 can be installed in the middle of the parallel IGBT chips, thereby improving the parallel current sharing characteristics of the IGBT chips.
As shown in fig. 6 to 8, optionally, the power semiconductor module of the present embodiment further includes an auxiliary signal pin 900 inserted into the hollow cavity 111 of the main body 110, wherein the auxiliary signal pin 900 has a circular cross-sectional shape and is in clearance fit with the hollow cavity 111; alternatively, as shown in fig. 6, the auxiliary signal pin 900 has a square cross-sectional shape that is an interference fit with the hollow cavity 111.
When the auxiliary signal pin 900 is clearance-fitted with the hollow cavity 111, the auxiliary signal pin 900 and the soldering base 100 need to be soldered to each other, so that the power semiconductor module can conduct the auxiliary signal to the outside.
The auxiliary signal pin 900 may be, but is not limited to being, made of copper or copper alloy and has a surface plating of nickel, tin or gold. Wherein, the solder 400 is not easy to combine with the nickel plating layer, a solder resist area can be formed on the surface of the auxiliary signal pin 900, the surface plating layer of tin or gold is easy to combine with the solder 400, and an easy-to-solder area can be formed on the surface of the auxiliary signal pin 900.
As shown in fig. 8, the auxiliary signal pin 900 is higher than the package 500 of the power semiconductor module, so that the auxiliary signal pin 900 penetrates out of the package 500 to be connected with the driving circuit board on the upper layer of the power semiconductor module, thereby smoothly conducting the auxiliary signal outwards.
Optionally, the auxiliary signal pin 900 may be connected to the driving circuit board on the upper layer of the power semiconductor module by using a connection method such as press-fit or soldering.
Optionally, the power semiconductor module of the present embodiment is an insulated gate bipolar transistor module.
Because the IGBT module adopts the above welding base 100, the end surface of the welding base 100 is provided with the annular boss 140, thereby increasing the welding junction surface area of the welding base 100 and the copper layer 800 covered on the liner 700, being favorable to avoiding the falling of the welding base 100, and being capable of better fixing the auxiliary signal pin 900, and ensuring that the IGBT module can conduct auxiliary signals outwards.
The bonding wire has low vibration tolerance capability and is easy to break during vibration, so that the IGBT module adopting the bonding wire to connect the auxiliary signal needle 900 and the lining plate 700 cannot be suitable for high vibration environments such as an electric drive controller of a three-in-one or multiple-in-one vehicle. Because the welding base 100 is adopted to connect the auxiliary signal pin 900 and the lining plate 700 in the embodiment, the use of a bonding wire to connect the auxiliary signal pin 900 and the lining plate 700 is avoided, so that the IGBT module in the embodiment is beneficial to being suitable for high vibration environments such as an electric drive controller of a three-in-one or multiple-in-one vehicle.
In the description of the present invention, it should be understood that the terms "upper," "lower," "bottom," "top," "front," "rear," "inner," "outer," "left," "right," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate description of the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be configured and operated in a particular orientation, and thus should not be construed as limiting the present invention.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that the different dependent claims and the features described herein may be combined in ways other than as described in the original claims. It is also to be understood that features described in connection with separate embodiments may be used in other described embodiments.
Claims (9)
1. A welding base comprising a tubular main body, the first and second ends of the main body being provided with first and second annular flanges extending outwardly perpendicular to the outer wall of the main body, respectively, characterized in that at least one of the first and second annular flanges is provided with an annular boss on a flange surface remote from the main body;
the height of the welding base is between 2.0 and 5.0 millimeters, the inner diameter of the main body is between 0.6 and 1.0 millimeters, the outer diameter of the first annular flange or the outer diameter of the second annular flange is between 2.5 and 4.0 millimeters, the height of the annular boss is between 0.05 and 0.25 millimeters, the distance from the annular boss to the outer edge of the annular flange is between 0.05 and 1.50 millimeters, and the outer diameter of the annular boss is between 1.45 and 2.50 millimeters.
2. The welding base of claim 1, wherein a connection of an inner wall of the body and the annular boss is provided with a radius.
3. The weld base of claim 2, wherein the radius of the radius is between 0.1 and 0.5 millimeters.
4. The weld base of claim 1, wherein the weld base is made of copper or copper alloy.
5. The weld base of claim 1, wherein the inner wall of the body has a nickel plating; the flange surface has a silver, tin or gold plating.
6. A power semiconductor module comprising a solder mount according to any of claims 1-5.
7. The power semiconductor module of claim 6, comprising a substrate, a backing plate, and a copper-clad layer stacked in sequence, wherein the solder mount is solder-connected to the copper-clad layer.
8. The power semiconductor module of claim 6, further comprising an auxiliary signal pin inserted into the hollow cavity of the body, wherein,
the cross section of the auxiliary signal needle is circular, and the auxiliary signal needle is in clearance fit with the hollow cavity; or,
the cross section of the auxiliary signal needle is square, and the auxiliary signal needle is in interference fit with the hollow cavity.
9. The power semiconductor module according to claim 7 or 8, characterized in that the power semiconductor module is an insulated gate bipolar transistor module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911347198.XA CN113035790B (en) | 2019-12-24 | 2019-12-24 | Welding base and power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911347198.XA CN113035790B (en) | 2019-12-24 | 2019-12-24 | Welding base and power semiconductor module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113035790A CN113035790A (en) | 2021-06-25 |
| CN113035790B true CN113035790B (en) | 2024-04-02 |
Family
ID=76451737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911347198.XA Active CN113035790B (en) | 2019-12-24 | 2019-12-24 | Welding base and power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113035790B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09199659A (en) * | 1997-02-28 | 1997-07-31 | Ibiden Co Ltd | Conductor pin for semiconductor mounting board |
| CN101546741A (en) * | 2008-01-23 | 2009-09-30 | 英飞凌科技股份有限公司 | Contact element, power semiconductor module and circuit apparatus comprising the module |
| JP2012044208A (en) * | 2011-10-21 | 2012-03-01 | Mitsubishi Electric Corp | Power semiconductor module |
| CN105027279A (en) * | 2013-03-21 | 2015-11-04 | 富士电机株式会社 | Contact component and semiconductor module |
| JP2016219554A (en) * | 2015-05-18 | 2016-12-22 | 富士電機株式会社 | Semiconductor device, metal member and method of manufacturing semiconductor device |
| JP2017011221A (en) * | 2015-06-25 | 2017-01-12 | 富士電機株式会社 | Semiconductor device |
| CN106736085A (en) * | 2017-01-18 | 2017-05-31 | 无锡市正罡自动化设备有限公司 | Anti-sticking band welding winding apparatus and anti-sticking band welding feed-tape structure and series welding machine |
| CN108630618A (en) * | 2017-03-23 | 2018-10-09 | 富士电机株式会社 | Semiconductor device |
| CN109300872A (en) * | 2018-11-06 | 2019-02-01 | 杭州中好蔚莱电子有限公司 | A kind of power semiconductor contact element |
| CN209249454U (en) * | 2018-11-06 | 2019-08-13 | 杭州中好蔚莱电子有限公司 | A kind of power semiconductor contact element |
| CN209804600U (en) * | 2019-02-28 | 2019-12-17 | 株洲中车时代电气股份有限公司 | Welding base for power module |
-
2019
- 2019-12-24 CN CN201911347198.XA patent/CN113035790B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09199659A (en) * | 1997-02-28 | 1997-07-31 | Ibiden Co Ltd | Conductor pin for semiconductor mounting board |
| CN101546741A (en) * | 2008-01-23 | 2009-09-30 | 英飞凌科技股份有限公司 | Contact element, power semiconductor module and circuit apparatus comprising the module |
| JP2012044208A (en) * | 2011-10-21 | 2012-03-01 | Mitsubishi Electric Corp | Power semiconductor module |
| CN105027279A (en) * | 2013-03-21 | 2015-11-04 | 富士电机株式会社 | Contact component and semiconductor module |
| JP2016219554A (en) * | 2015-05-18 | 2016-12-22 | 富士電機株式会社 | Semiconductor device, metal member and method of manufacturing semiconductor device |
| JP2017011221A (en) * | 2015-06-25 | 2017-01-12 | 富士電機株式会社 | Semiconductor device |
| CN106736085A (en) * | 2017-01-18 | 2017-05-31 | 无锡市正罡自动化设备有限公司 | Anti-sticking band welding winding apparatus and anti-sticking band welding feed-tape structure and series welding machine |
| CN108630618A (en) * | 2017-03-23 | 2018-10-09 | 富士电机株式会社 | Semiconductor device |
| CN109300872A (en) * | 2018-11-06 | 2019-02-01 | 杭州中好蔚莱电子有限公司 | A kind of power semiconductor contact element |
| CN209249454U (en) * | 2018-11-06 | 2019-08-13 | 杭州中好蔚莱电子有限公司 | A kind of power semiconductor contact element |
| CN209804600U (en) * | 2019-02-28 | 2019-12-17 | 株洲中车时代电气股份有限公司 | Welding base for power module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113035790A (en) | 2021-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8860220B2 (en) | Semiconductor device and method for manufacturing the same | |
| JP2007184525A (en) | Electronic apparatus | |
| JP6850938B1 (en) | Semiconductor devices and lead frame materials | |
| JP2018046071A (en) | Electronic component | |
| KR20160001373U (en) | Clip structure for semiconductor package and semiconductor package including the same | |
| US9076782B2 (en) | Semiconductor device and method of manufacturing same | |
| JP2021145082A (en) | Semiconductor module and wire bonding method | |
| US9455208B2 (en) | Semiconductor device | |
| CN113035790B (en) | Welding base and power semiconductor module | |
| JP2002124548A (en) | Tape carrier and semiconductor device using the tape carrier | |
| KR101216896B1 (en) | Power module | |
| US20210265812A1 (en) | Semiconductor laser device | |
| CN209912864U (en) | Welding base and power semiconductor module using same | |
| JP2011023748A (en) | Electronic apparatus | |
| KR200484570Y1 (en) | Semiconductor package with clip structure | |
| JP3923063B2 (en) | Package for semiconductor device and manufacturing method thereof | |
| US5532517A (en) | Hybrid integrated circuit device with heat suppression means provided in the vicinity of solder bonding areas | |
| JP2018190882A (en) | Semiconductor device | |
| CN112768976A (en) | Lead terminal for power module | |
| JP2012114898A (en) | Crystal resonator and crystal oscillator | |
| JP6718540B2 (en) | Semiconductor device | |
| US20210351092A1 (en) | Semiconductor apparatus | |
| JP2012222128A (en) | Power module | |
| JP2004343146A (en) | Thermoelectric module | |
| JP2009158769A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |