CN113029218B - 基于硅基微环的游标效应光纤干涉传感器解调装置及方法 - Google Patents

基于硅基微环的游标效应光纤干涉传感器解调装置及方法 Download PDF

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CN113029218B
CN113029218B CN202110267612.7A CN202110267612A CN113029218B CN 113029218 B CN113029218 B CN 113029218B CN 202110267612 A CN202110267612 A CN 202110267612A CN 113029218 B CN113029218 B CN 113029218B
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王若晖
李敏轩
乔学光
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Northwest University
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Abstract

一种基于硅基微环的游标效应光纤干涉传感器解调装置及方法，宽带光源出射的激光通过光纤进入环形器，环形器与干涉型光纤传感器和光纤放大器的输入端通过光纤相连，光纤放大器的输出端通过光栅耦合器与硅光芯片相连，所述的硅光芯片为SOI基底上设置有结构相同的第一直波导和第二直波导，第一直波导和第二直波导之间设置有环形波导，环形波导与第一直波导和第二直波导之间留有间隙，环形波导上设置有加热电极。本发明采用硅光芯片对光纤干涉传感器解调，使解调装置微型化，光纤干涉传感器反射的光信号进入硅光芯片与硅光芯片的光谱进行叠加产生游标效应，提高了解调灵敏度，增大了测量范围。

Description

基于硅基微环的游标效应光纤干涉传感器解调装置及方法
技术领域
本发明属于光纤解调技术领域，具体涉及到基于硅基微环的游标效应光纤干涉传感器解调装置及方法。
背景技术
光纤传感器因其结构简单、体积小、重量轻、抗电磁干扰和高灵敏度等优点，广泛应用于温度、折射率、压力、应变等外界物理量的测量。其中光纤温度、应变传感器在过去的二十年中得到了广泛的研究，在航天航空、工业生产、安全监测等领域都具有广阔的应用前景。
常见的光纤温度、应变传感器一般基于光纤光栅或光纤干涉仪结构，其中基于光纤光栅结构的温度、应变传感器灵敏度通常较低，一般分别在pm/℃和 pm/με量级；而基于法布里-珀罗干涉仪、马赫-曾德尔干涉仪和光纤赛格纳克干涉仪等结构的度、应变传感器，其温度灵敏度可以达到亚nm/℃甚至nm/℃量级，而应变灵敏度通常在pm/με量级。近年来，某些特殊应用领域对光纤温度、应变传感器灵敏度提出了更高要求，研究人员开始将游标效应作为一种增敏手段进一步应用于光学检测中。
光纤游标效应具有多种实现方式。例如宽带光源1经过光纤法布里-珀罗腔标准具后的反射或者透射光谱就是一个梳状光谱，又比如布拉格光栅的反射光谱。梳状光谱的峰间距与光器件的参数有关，因此可以通过调节器件的参数(例如标准具的腔长)来调节谱峰间距，从而得到两个谱峰间距有细微差别的梳状光谱，然后将这两个器件一起使用就可以形成光学游标效应。假如其中一个器件随着环境变量(比如温度，压力，应变等)，其光谱在保持谱峰间距的情况下发生微小的平移，那么通过检测初始对齐的谱峰和当前对齐的谱峰，就可以将谱峰的微小位移进行放大读数，这样就能做到在保持较大的测量范围的同时提高测量的灵敏度。传统实现光纤游标效应的办法都是无源光纤器件，光谱不可调节。假如光谱漂移过了一整个匹配周期，则无法分辨，难以实现大范围物理参量的传感。因此虽然提高了测量精度，但是测量范围有限。另外，现有报道的游标效应解调手段都是应用光谱仪等大型设备，成本高昂，体积庞大，不适用于户外测试。
发明内容
本发明所要解决的技术问题在于克服现有光纤传感器解调装置的缺点，提供一种精度高、微型化、检测范围大的基于硅基微环的游标效应光纤干涉传感器解调装置。
解决上述技术问题所采用的技术方案是：一种基于硅基微环的游标效应光纤干涉传感器解调装置，宽带光源出射的激光通过光纤进入环形器，环形器与干涉型光纤传感器和光纤放大器的输入端通过光纤相连，光纤放大器的输出端通过光栅耦合器与硅光芯片相连，所述的硅光芯片为SOI基底上设置有结构相同的第一直波导和第二直波导，第一直波导和第二直波导之间设置有环形波导，环形波导与第一直波导和第二直波导之间留有间隙，环形波导上设置有加热电极。
作为一种优选的技术方案，所述的光纤放大器为掺铒光纤放大器。
作为一种优选的技术方案，所述的第一直波导的宽度为400～500nm、厚度为220nm，所述的环形波导的半径为3～40μm、厚度为220nm。
作为一种优选的技术方案，所述的环形波导与第一直波导和第二直波导之间的间隙宽度为100nm。
作为一种优选的技术方案，所述的干涉型光纤传感器为光纤马赫增德尔干涉仪或光纤塞格纳克干涉仪或光纤法布里珀罗干涉仪。
作为一种优选的技术方案，所述的加热电极的材质为钛钨合金、铝、金、铜中的一种。
作为一种优选的技术方案，光栅耦合器上还连接有光谱仪，硅光芯片上还连接有波形发生器。
本发明还提供一种基于硅基微环的游标效应光纤干涉传感器解调装置的解调方法：
干涉型光纤传感器反射出的光信号进入硅光芯片与硅光芯片的光谱叠加，产生游标效应将光信号的漂移量放大，光信号漂移过一个游标效应周期后，通过加热电极加热，使游标效应产生的光谱重新回到起始位置。
作为一种优选的技术方案，所述的硅光芯片光谱漂移量与加热电极所加电压的关系为：
Figure BDA0002972560200000031
式中Δλ为硅光芯片光谱漂移量，λ0为光信号原始波长，neff为硅的折射率，η为加热电极与环形波导热传递效率，U为加热电极电压，R为加热电极电阻值，ε为硅的热光系数。
本发明的有益效果如下：
本发明采用硅光芯片对光纤干涉传感器解调，使解调装置微型化，光纤干涉传感器反射的光信号进入硅光芯片与硅光芯片的光谱进行叠加产生游标效应，提高了解调灵敏度，硅光芯片的环形波导上设置加热电极，通过加热电极加热产生的热光效应实现光谱的调谐，增大了测量范围。
附图说明
图1是本发明的结构示意图。
图2是图1中硅光芯片7的结构示意图。
图3视图2的俯视图。
具体实施方式
下面结合附图和实施例对本发明进一步详细说明，但本发明不限于下述的实施方式。
实施例1
本实施例以对光纤法布里珀罗干涉仪3的解调为例对本发明进行说明。
在图1中，本实施例的基于硅基微环的游标效应光纤干涉传感器解调装置由宽带光源1、环形器2、光纤法布里珀罗干涉仪3、光栅耦合器4、光谱仪5、波形发生器6、硅光芯片7、掺铒光纤放大器8连接构成。宽带光源1出射的激光通过光纤进入环形器2，环形器2通过光纤与光纤法布里珀罗干涉仪3和光纤放大器的输入端相连，光纤放大器的输出端通过光栅耦合器4与硅光芯片7相连，硅光芯片7通过光栅耦合器4与光谱仪5相连，波形发生器6与硅光芯片7相连。
在图2、3中，本实施例的硅光芯片7由SOI基底7-1、第一直波导7-2、环形波导7-3、加热电极7-4、第二直波导7-5连接构成。
硅光芯片7为SOI基底7-1上安装有结构相同的第一直波导7-2和第二直波导 7-5，第一直波导7-2与光栅耦合器4相连，第一直波导7-2的宽度为450nm、厚度为220nm、长度与SOI基底7-1长度相等，第一直波导7-2和第二直波导7-5之间安装有环形波导7-3，环形波导7-3与第一直波导7-2和第二直波导7-5之间的间隙宽度为100nm，环形波导7-3的半径为15.25μm、厚度为220nm，环形波导 7-3上铺设有一层加热电极7-4，加热电极7-4的材质为钛钨合金，也可以是铝、金、铜中的一种，加热电极7-4与波形发生器6相连，波形发生器6用于对加热电极7-4加电压。
本实施例的基于硅基微环的游标效应光纤干涉传感器解调装置的解调方法为：
宽带光源1出射的激光通过环形器2进入光纤法布里珀罗干涉仪3，光纤法布里珀罗干涉仪3反射回的光信号经过环形器2进入光纤放大器，光信号通过光纤放大器对其进行放大处理后由光栅耦合器4进入硅光芯片7，与硅光芯片7的光谱叠加产生游标效应，将光信号的漂移量放大，光信号漂移过一个游标效应周期后，通过波形发生器6对加热电极7-4加电，利用热光效应实现光谱的调谐，使游标效应产生的光谱重新回到起始位置，硅光芯片7光谱漂移量与加热电极7-4 所加电压关系为：
Figure BDA0002972560200000051
式中Δλ为硅光芯片7光谱漂移量，λ0为光信号原始波长，λ0＝1500nm～1600nm，neff为硅的折射率，neff＝3.42，η为加热电极7-4与环形波导7-3热传递效率，η＝0.9， U为加热电极7-4电压，U＝1～4V，R为加热电极7-4的电阻值，R＝70～140Ω，ε为硅的热光系数，ε＝1.84×10-4K-1。
因此通过加热电极7-4所加电压可知硅光芯片7光谱漂移量，通过预先测试温度变化与游标效应光谱周期的关系，结合硅光芯片7的光谱漂移量即可实现大测量范围的解调，最终由光谱仪5对信号光进行显示。
本实施例的光纤法布里珀罗干涉仪3还可以是光纤马赫增德尔干涉仪或光纤塞格纳克干涉仪。

Claims (8)

1.一种基于硅基微环的游标效应光纤干涉传感器解调装置，其特征在于：宽带光源出射的激光通过光纤进入环形器，环形器与干涉型光纤传感器和光纤放大器的输入端通过光纤相连，光纤放大器的输出端通过光栅耦合器与硅光芯片相连，所述的硅光芯片为SOI基底上设置有结构相同的第一直波导和第二直波导，第一直波导和第二直波导之间设置有环形波导，环形波导与第一直波导和第二直波导之间留有间隙，环形波导上设置有加热电极；
该装置的解调方法为：干涉型光纤传感器反射出的光信号进入硅光芯片与硅光芯片的光谱叠加，产生游标效应将光信号的漂移量放大，光信号漂移过一个游标效应周期后，通过加热电极加热，使游标效应产生的光谱重新回到起始位置，通过加热电极所加电压可知硅光芯片光谱漂移量，通过预先测试温度变化与游标效应光谱周期的关系，结合硅光芯片的光谱漂移量即可实现解调。
2.根据权利要求1所述的基于硅基微环的游标效应光纤干涉传感器解调装置，其特征在于：所述的光纤放大器为掺铒光纤放大器。
3.根据权利要求1所述的基于硅基微环的游标效应光纤干涉传感器解调装置，其特征在于：所述的第一直波导的宽度为400～500nm、厚度为220nm，所述的环形波导的半径为3～40μm、厚度为220nm。
4.根据权利要求1所述的基于硅基微环的游标效应光纤干涉传感器解调装置，其特征在于：所述的环形波导与第一直波导和第二直波导之间的间隙宽度为100nm。
5.根据权利要求1所述的基于硅基微环的游标效应光纤干涉传感器解调装置，其特征在于：所述的干涉型光纤传感器为光纤马赫增德尔干涉仪或光纤塞格纳克干涉仪或光纤法布里珀罗干涉仪。
6.根据权利要求1所述的基于硅基微环的游标效应光纤干涉传感器解调装置，其特征在于：所述的加热电极的材质为钛钨合金、铝、金、铜中的一种。
7.根据权利要求1所述的基于硅基微环的游标效应光纤干涉传感器解调装置，其特征在于：光栅耦合器上还连接有光谱仪，硅光芯片上还连接有波形发生器。
8.根据权利要求1所述的基于硅基微环的游标效应光纤干涉传感器解调装置，其特征在于：所述的硅光芯片光谱漂移量与加热电极所加电压的关系为：
Figure DEST_PATH_IMAGE001
式中
Figure 951397DEST_PATH_IMAGE002
为硅光芯片光谱漂移量，
Figure DEST_PATH_IMAGE003
为光信号原始波长，
Figure 399696DEST_PATH_IMAGE004
为硅的折射率，
Figure DEST_PATH_IMAGE005
为加热电极与环形波导热传递效率，U为加热电极电压，R为加热电极电阻值，
Figure 710592DEST_PATH_IMAGE006
为硅的热光系数。
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