CN112991268A - Rapid screening method for target defects on wafer, device and system thereof, storage medium and electronic equipment - Google Patents
Rapid screening method for target defects on wafer, device and system thereof, storage medium and electronic equipment Download PDFInfo
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Abstract
The invention relates to a method for rapidly screening target defects on a wafer, which comprises the following steps: acquiring screening parameters such as uniqueness weight, severity weight, universality weight and custom constant of each defect to be screened in all target areas; determining a respective screening reference value of each defect to be screened according to the screening parameters; and automatically screening the target defects according to the screening reference value and a preset screening rule. According to the invention, the screening parameters of each defect to be screened in multiple aspects are obtained, the screening reference value is determined according to the screening parameters in multiple aspects, and the target defect is automatically screened according to the screening reference value, so that the problem that large-batch rapid screening cannot be realized by manual screening in the prior art is solved, the labor intensity of workers is reduced, and the reliability and the accuracy of a screening result are ensured to a certain extent. Correspondingly, the invention also discloses a rapid screening device and system, a storage medium and electronic equipment.
Description
Technical Field
The present invention relates to defect detection in semiconductor technologies, and in particular, to a method and an apparatus for rapidly screening target defects on a wafer, a computer-readable storage medium, and an electronic device.
Background
In the manufacturing process of semiconductor integrated circuits, defect detection has become an important means for improving yield. At present, defect scanning in the industry generally adopts a total count (total count), an incremental count (add count) and a repeat count (repeat count), and a rough classification (rough bin) classified by self-classification software of a machine (automatic classification based on pixel size, shape and size and the like) to control defects, and such conventional defects as the random appearance of defect positions on a wafer can be subjected to specification setting through such conventional methods to realize defect detection of a system.
However, through research, it is found that the area with a high chip failure rate on the wafer is because the defect of the area has some defects specific to the area in addition to the defects of other areas, that is, when a certain area on the wafer has some specific defects that other areas do not have, the chip failure rate of the area is higher than the chip failure rate of other areas. For example, referring to fig. 1, since defects (i.e., a defect occurring in both the inner ring region and the outer ring region, or both the inner ring region, the middle ring region and the outer ring region, or all the inner ring region, the middle ring region and the outer ring region, referred to as common defects) and other defects (referred to as specific target defects) that do not occur in the middle ring region or the outer ring region occur in the inner ring region of the wafer, the failure rate of chips in the inner ring region of the wafer is highest compared to the middle ring region and the outer ring region.
Based on this, in order to be able to screen out such a specific target defect, in the case that the number to be screened is relatively small, i.e. the number of wafer samples is small, and the defect categories on the wafer are small, the target defect can be found by simple manual screening. However, in the case that the number of the to-be-screened objects is large, that is, the number of the wafer samples is very large, and the defect types on the wafer are very many, the efficiency of the manual screening is very low, and the accuracy of the screening is also very low. Therefore, how to rapidly screen out target defects specific to a target area from a large number of defects on a wafer, so as to provide a strong reference for failure analysis of a chip, is a problem that needs to be solved at present.
Disclosure of Invention
In order to partially solve the problems, the invention provides a method for rapidly screening target defects, a device, a system, a storage medium and an electronic device thereof.
In a first aspect of the present invention, a method for rapidly screening a target defect on a wafer is provided, which includes the steps of: obtaining screening parameters of each defect to be screened in a target area of all sample wafers to be screened; wherein the screening parameters include: an uniqueness weight, a severity weight, a universality weight, and a custom constant; determining a respective screening reference value of each defect to be screened according to the screening parameters; and automatically screening the target defects from the various defects to be screened according to the screening reference value and a preset screening rule.
In an exemplary embodiment of the present invention, the step of automatically screening the target defect from the plurality of types of defects to be screened specifically includes: and comparing each screening reference value with a preset reference threshold value, and judging the defect to be screened corresponding to the screening reference value which is greater than or equal to the preset reference threshold value as a target defect.
In another exemplary embodiment of the present invention, the step of automatically screening the target defect from the plurality of types of defects to be screened specifically includes: sorting the screening parameters of the defects to be screened according to the sequence from big to small; and comparing the two sorted adjacent screening reference values, and if the difference between the two screening reference values is greater than or equal to a preset difference threshold, judging the defects to be screened corresponding to the larger screening reference value in the two screening reference values and the defects to be screened corresponding to each screening reference value sorted in front of the larger screening reference value as target defects.
In an exemplary embodiment of the present invention, the step of obtaining the unique weight of the defect to be screened specifically includes: acquiring the quantity of each defect to be screened in the target area of all sample wafers to be screened; acquiring the number of each defect to be screened in a reference area of all sample wafers to be screened; and determining the respective unique weight of each defect to be screened according to the respective number of each defect to be screened in the target area and the respective number of each defect to be screened in the reference area.
In an exemplary embodiment of the present invention, the step of obtaining the severity weight of the defect to be screened specifically includes: acquiring the total number of all defects to be screened in the target area of all sample wafers to be screened; and determining the severity weight of each defect to be screened according to the respective number of each defect to be screened in the target area and the sum of the number of all defects to be screened.
In an exemplary embodiment of the present invention, the step of obtaining the universal weight specifically includes: obtaining the chip sum corresponding to each defect to be screened; acquiring the number of failure chips corresponding to each defect to be screened; and determining the respective universality weight of each defect to be screened according to the number of the failed chips corresponding to each defect to be screened and the sum of the chips.
In a second aspect of the present invention, there is provided a rapid screening device for target defects on a wafer, comprising: the data acquisition module is used for acquiring the screening parameters of each defect to be screened in the target area on all the sample wafers to be screened; wherein the screening parameters include: an uniqueness weight, a severity weight, a universality weight, and a custom constant; the data processing module is used for determining a respective screening reference value of each defect to be screened according to the screening parameters acquired by the data acquisition module; and the defect screening module is used for automatically screening the target defects from various defects to be screened according to the screening reference value of each defect to be screened determined by the data processing module and a preset screening rule.
In an exemplary embodiment of the present invention, the defect screening module is specifically configured to compare each of the screening reference values with a preset reference threshold, and determine the defect to be screened, corresponding to the screening reference value greater than or equal to the preset reference threshold, as a target defect.
In an exemplary embodiment of the present invention, the defect screening module specifically includes: the sorting unit is used for sorting the screening reference values of the defects to be screened according to the descending order; and the screening unit is used for comparing the two screening reference values which are adjacent in the sequence, and when the difference value between the two screening reference values is smaller than or equal to a preset difference value threshold value, determining the defects to be screened which correspond to each screening reference value in front of the larger screening reference value in the two screening reference values as target defects.
In an exemplary embodiment of the present invention, the data obtaining module specifically includes: the first data acquisition unit is used for acquiring the number of each type of defects to be screened in the target area of all sample wafers to be screened; the second data acquisition unit is used for acquiring the number of each type of defect to be screened in the reference area of all sample wafers to be screened; a first data processing unit for determining an unique weight for each defect to be screened according to the respective number of each defect to be screened in the target area acquired by the first data acquisition unit and the respective number of each defect to be screened in the reference area acquired by the second data acquisition unit.
In an exemplary embodiment of the present invention, the data obtaining module further includes: the third data acquisition unit is used for acquiring the sum of the number of all defects to be screened in the target areas of all sample wafers to be screened; and the second data processing unit is used for determining the severity weight of each defect to be screened according to the respective number of each defect to be screened in the target area acquired by the first data acquisition unit and the sum of the numbers of all defects to be screened acquired by the third data acquisition module.
In an exemplary embodiment of the present invention, the data obtaining module further includes: the fourth data acquisition unit is used for acquiring the chip sum corresponding to each defect to be screened; the fifth data acquisition unit is used for acquiring the number of the failure chips corresponding to each defect to be screened; and the third data processing unit is configured to determine a universal weight of each defect to be screened according to the number of failed chips corresponding to each defect to be screened acquired by the fifth data acquisition unit and a total number of chips corresponding to each defect to be screened acquired by the fourth data acquisition unit.
In a third aspect of the present invention, a system for rapid screening of target defects on a wafer is provided, which includes: the defect scanning device is used for scanning all sample wafers to be screened in batches to obtain the attribute characteristics of each defect on each sample wafer to be screened; any of the above rapid screening devices in data communication with the defect scanning device.
A fourth aspect of the present invention is to provide an electronic device, comprising at least one processor, at least one memory, a communication interface and a bus; the processor, the memory and the communication interface complete mutual communication through the bus; the memory is used for storing a program for executing any one of the methods; the processor is configured to execute programs stored in the memory.
A fifth aspect of the present invention provides a computer-readable storage medium, storing a computer program, which, when executed by a processor, controls an apparatus in which the storage medium is located to perform any of the above method steps.
The effective effect is as follows:
according to the method and the device, the screening parameters such as the uniqueness weight, the severity weight, the universality weight and the custom constant of each defect to be screened in the target area are obtained, the screening reference value of each defect to be screened is determined according to the screening parameters, and finally the target defect is automatically screened from the various defects to be screened in the target area according to the screening reference value, so that the problem that manual screening cannot be adopted in the prior art to realize large-batch quick screening is solved, the labor intensity of workers is reduced, and the reliability and the accuracy of the screening result are guaranteed to a certain extent.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. Throughout the drawings, like elements or portions are generally identified by like reference numerals. In the drawings, elements or portions are not necessarily drawn to scale. It is apparent that the drawings in the following description are of some embodiments of the invention and that other drawings may be derived by those skilled in the art without inventive exercise from these drawings:
FIG. 1 is a flow chart of a method for rapid screening of target defects on a wafer in accordance with an exemplary embodiment of the present invention;
FIG. 2 is a flowchart of a method for rapid screening of target defects on a wafer according to yet another exemplary embodiment of the present invention;
FIG. 3 is a schematic illustration of a portion of a defect distribution in a target area and a reference area on a sample wafer to be screened in an exemplary embodiment;
FIG. 4 is a schematic structural view of a rapid screening device according to an exemplary embodiment of the present invention;
fig. 5 is a schematic structural diagram of an electronic device according to an exemplary embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Herein, suffixes such as "module", "part", or "unit" used to denote elements are used only for facilitating the description of the present invention, and have no specific meaning in itself. Thus, "module", "component" or "unit" may be used mixedly.
The term is defined as:
"target region": generally, the wafer may be divided into a plurality of regions according to different dividing rules, and the failure rate of the chip in one or some of the divided regions is the highest, so that these regions are the target regions herein, and the other regions are the reference regions. For example, the wafer may be divided into an inner circle region, a middle circle region and an outer circle region according to preset different radii or diameters, and a chip failure rate on the inner circle region is highest in the wafers of the current lot, so that the inner circle region is identified/set as a target region, and the middle circle region and the outer circle region are identified/set as reference regions.
"target defect": the target defect in this context refers to a defect that is unique among the above-mentioned target defects, i.e. a defect of this kind only appears in the target area and not in any reference area. For example, a defect A, B, C appears in the inner circle region, a defect B, D appears in the middle circle region, and a defect A, B, E appears in the outer circle region on the wafer, wherein the third defect, namely the defect C, appears only in the inner circle region, but does not appear in the inner circle region or the outer circle region, so that the defect C specific to the target region is the target defect to be screened.
"Defect to be screened": generally, a target area of a wafer has a plurality of defects, that is, other types of defects besides the target defect, and the other types of defects also appear in a reference area of the wafer, so that before the target defect is not screened, various defects in the target area are collectively referred to as defects to be screened, that is, a part of the defects to be screened are specific to the target area, do not appear in the reference area, or rarely appear in the reference area, and another part of the defects are likely to appear in the target area or the reference area. For example, referring to fig. 3, in addition to the characteristic defect C, there are a defect a and a defect B in the inner circle region of a wafer, and the defect a also appears in the outer circle region, and the defect B also appears in the middle circle region and the outer circle region, so that the defects A, B, C are collectively referred to as defects to be screened. Of course, defects to be screened that occur in both the target area and the reference area may also be referred to as common defects.
Example one
Referring to fig. 1, a flowchart of a method for rapidly screening a target defect on a wafer according to an exemplary embodiment of the present invention is shown. Specifically, the rapid screening method of the present exemplary embodiment includes the steps of:
s101, obtaining screening parameters of each defect to be screened in a target area of all sample wafers to be screened.
In some embodiments, each of a plurality of sample wafers to be screened in a current batch is divided into an inner ring area, a middle ring area and an outer ring area in advance, and tests show that the failure rate of chips in the inner ring area in the batch is high, so that the inner ring area of each sample wafer to be screened is used as a target area to quickly screen a defect, namely a target defect, specific to the target area from a plurality of defects, namely defects to be screened, in the inner ring area.
Of course, in other embodiments, if it is found through experiments that the chip failure rate of the middle ring region in the batch is high, the middle ring region is divided into the target region and marked, and accordingly, the inner ring region and the outer ring region are automatically divided into the reference region and marked. Similarly, the outer circle region may be divided into a target region, and the middle circle region and the inner circle region may be divided into reference regions. Of course, it is understood that the specific division rule may be modified or expanded according to actual needs.
In some embodiments, the screening parameters include: unique weight, severity weight, universal weight and custom constant for each defect to be screened within the target area.
Wherein the uniqueness weight is used for measuring whether the current type of defect to be screened is specific to the target area or more appears in the target area and less appears in the reference area. In some embodiments, the unique weight may be expressed as a ratio of the total number of a certain type of defect to be screened in the target area of all sample wafers to be screened to the total number of the certain type of defect to be screened in the reference area of all sample wafers to be screened (i.e., the ratio of the number of the certain type of defect to be screened in the target area to the number of the certain type of defect to be screened in the reference area). Correspondingly, the larger the ratio, i.e. the greater the uniqueness weight, the greater the probability that the defect to be screened will appear in the target area than the reference area, reflecting from the side that the type of defect may be specific to the target area. Of course, if such a defect to be screened does not appear in the reference area, the ratio is infinite.
Accordingly, in some embodiments, the step of obtaining the uniqueness weight in step S101 specifically includes the steps of:
and S1011, acquiring the respective quantity of each defect to be screened in the target area of all the sample wafers to be screened.
In some embodiments, a defect scanning device such as a Scanning Electron Microscope (SEM) or a Transmission Electron Microscope (TEM) is used to perform batch scanning in advance, so as to obtain parameters such as the type, position (or coordinate), size, and the like of all defects on each sample wafer to be screened. Accordingly, the region to which each defect belongs may be determined according to the position or coordinate of the defect (specifically, the position or coordinate of the defect may be compared with the radius/diameter of the preset divided region), and then the number of each defect to be screened in the target region of all the sample wafers to be screened is counted.
For example, referring to fig. 3, the number and the position or the coordinates of each defect A, B, C, D, E in a sample wafer to be screened are obtained by pre-scanning, wherein a first defect a currently appears in the inner ring region and the outer ring region, a second defect B currently appears in the inner ring region, the middle ring region and the outer ring region simultaneously, a third defect C appears in the inner ring region only, a fourth defect D appears in the middle ring region only, and a fifth defect E appears in the outer ring region only, and the respective numbers of the three defects A, B, C to be screened in the target region of the sample wafer to be screened are obtained. Since the types and the number of defects to be screened in the target area of each sample wafer to be screened are different, for example, three defects in the target area of the second sample wafer to be screened are: F. g, D, and the four defects in the reference area are: A. c, F, H, respectively; then the defects to be screened in the target areas of the two sample wafers to be screened are: A. b, C, F, G, D, and the number of each defect to be screened. Therefore, the same method can be adopted to obtain the respective number of each defect to be screened in the inner circle region (i.e. the target region) of each other sample wafer to be screened by statistics, and finally obtain the respective number of each defect to be screened A, B, C, F, G, D · · · · · · · · in the inner circle region (i.e. the target region) of all sample wafers to be screened by comprehensive statistics: na, Nb, Nc, Nf, Ng, Nd.
And S1012, acquiring the respective number of each defect to be screened in the reference area of all the sample wafers to be screened.
In some embodiments, as described above, the area of each defect on each sample wafer may be determined according to the position or coordinate of each defect on each wafer, and the defect to be screened appearing in the target area may also appear in the reference area, and naturally the respective number of each defect to be screened in the reference area of all the sample wafers to be screened may also be obtained.
For example, for three types of defects to be screened A, B, C in a target area in a sample wafer to be screened currently, a first type of defect to be screened a and a second type of defect to be screened B appear in a reference area of the sample wafer to be screened currently, and of course, the two types of defects to be screened may also appear in reference areas of other sample wafers to be screened; similarly, although the third defect C to be screened does not appear in the reference area of the sample wafer to be screened currently, it may also appear in the reference areas of other sample wafers to be screened, so the number of the three defects A, B, C to be screened appearing in the inner circle area (i.e. the target area) or/and the outer circle area (i.e. the number of the defects appearing in the reference area) of all the sample wafers to be screened currently is counted respectively. Of course, if a defect to be screened does not appear in any reference area of the sample wafer to be screened, the corresponding statistical number is 0. Correspondingly, after the number of each defect to be screened in the reference area of each sample wafer to be screened is obtained, the sum of the numbers of the various defects to be screened appearing in the reference area of all the sample wafers to be screened can be obtained, that is, the number of each defect to be screened A, B, C, F, G, D · · · in the reference area of all the sample wafers to be screened is obtained: na ', Nb', Nc ', Nf', Ng ', Nd'.
And S1013, determining the uniqueness weight of each defect to be screened according to the number of each defect to be screened in the target area in the step S1011 and the number of each defect to be screened in the reference area acquired in the step S1012.
In some embodiments, as mentioned above, the unique weight can be expressed as a ratio of the total number of each defect to be screened in the target area of all the sample wafers to be screened to the total number of each defect to be screened in the reference area of all the sample wafers to be screened, and then the unique weight of each defect to be screened A, B, C, F, G, D in the target area of all the sample wafers to be screened of the lot is: Na/Na ', Nb/Nb', Nc/Nc ', Nf/Nf', Ng/Ng ', Nd/Nd'.
Wherein the severity weight is used to measure the severity of the occurrence of the defect to be screened in the target area. In some embodiments, the severity weight refers to the frequency of occurrence of the defect to be screened within the target area, and in particular, may be expressed as a ratio of the number of such defects to be screened within the target area to the sum of the number of all defects to be screened within the target area. Of course, the greater the frequency of transmission, the greater the severity weight.
Accordingly, in some embodiments, the step of obtaining the severity weight in step S101 specifically includes the steps of:
and S1014, acquiring the sum of the number of all defects to be screened in the target area of all sample wafers to be screened.
In some embodiments, the respective numbers Na, Nb, Nc, Nf, Ng, Nd · of each defect to be screened in the target region of all the sample wafers to be screened are already obtained in step S1011, and accordingly, the sum of the numbers of each defect to be screened is added, so as to obtain the sum N of the numbers of the defects to be screened in the target region of all the sample wafers to be screened, which is Na + Nb + Nc + Nf + Ng + Nd + ·.
And S1015, determining the severity weight of each defect to be screened in the target area according to the sum of the number of each defect to be screened in the target area of all the sample wafers to be screened and the number of all the defects to be screened in the target area.
In some embodiments, the number of each defect to be screened in the target area, Na, Nb, Nc, Nf, Ng, Nd ·, has already been obtained in step S1011 above, and the sum N of the numbers of all defects to be screened is obtained in step S1014, so that the ratio of the number of each defect to be screened to the sum of the numbers of all defects to be screened can be obtained, i.e. the severity weight of each defect to be screened is: Na/N, Nb/N, Nc/N, Nf/N, Ng/N, Nd/N.
The universal weight is used for measuring the universality of the defects to be screened appearing in the sample wafer screened at this time. In some embodiments, the universal weight may be specifically expressed as a ratio of the total number of failed dies with the type of screened defect to the total number of dies with the type of screened defect (i.e., the sum of the number of failed dies with the type of screened defect and the number of non-failed dies). Accordingly, in some embodiments, the step of obtaining the universal weight in step S101 specifically includes the steps of:
and S1016, acquiring the sum of chips corresponding to each defect to be screened.
In some embodiments, since each wafer has a plurality of chips, after scanning all sample wafers to be screened, parameters such as respective positions or coordinates, numbers, belonging areas and the like of all chips on all sample wafers to be screened can be obtained and can be stored in a database; meanwhile, the type, position or coordinate, belonging area and the like of each defect on each sample wafer are stored in the database, so that the belonging area of each defect can be determined according to the position or coordinate of each defect, and accordingly each defect to be screened is determined, and correspondingly, the chip corresponding to each defect to be screened can also be determined according to the position or coordinate of each defect to be screened and the position or coordinate of each chip, and accordingly, the total sum Ma, Mb, Mc, Mf, Mg, Md, corresponding to each defect to be screened is obtained.
S1017, acquiring the number of the failure chips corresponding to each defect to be screened.
In some embodiments, the failed chips are identified in the database in advance, so that the number of failed chips ma, mb, mc, mf, mg, md corresponding to each defect to be screened is further obtained on the basis of obtaining the chip sum corresponding to each defect to be screened.
And S1018, determining the universal weight of each defect to be screened according to the number of the failed chips and the total number of the chips corresponding to each defect to be screened.
In some embodiments, the ratio of the number of failed chips in the step S1017 to the total number of chips corresponding to each defect to be screened in the step S1016 is a universal weight, that is: Ma/Ma, Mb/Mb, Mc/Mc, Md/Md, Mf/Mf, Mg/Mg.
The custom constant is an empirical constant (for example, a defect weight value obtained by a research experiment aiming at the influence of various defects on chip failure in the industry), and can be set or adjusted in advance according to actual needs.
Of course, the sequence between the steps S1011-S1018 can be changed according to the actual requirement.
S103, determining a screening reference value of each defect to be screened according to the screening parameters.
In some embodiments, four screening parameters are determined for each defect to be screened according to the above step S101: the uniqueness weight alpha, the severity weight beta, the universality weight gamma and the custom constant delta construct a mathematical model to determine the respective screening reference value of each defect to be screened in the target area. Specifically, the mathematical model is: f ═ α ×. β ×. γ ×. δ, it follows that the respective screening reference value for each defect to be screened is the product of the respective four screening parameters for each defect to be screened, for example:
screening reference value of first defect A
Screening reference value of second defect B
Screening reference value for the third defect C
The fast screening method of the exemplary embodiment sets a screening reference value for each defect to be screened, and determines each screening reference value by four screening parameters, that is, measures each defect to be screened from four aspects, thereby ensuring the reliability and accuracy of the screening result.
And S105, automatically screening the target defects from the various defects to be screened according to the respective screening reference value of each defect to be screened and a preset screening rule.
In some embodiments, the preset screening rules include: screening each defect to be screened with the screening reference value larger than a preset reference threshold value, and judging the defect to be screened as a target defect. Specifically, the step S105 includes: comparing the screening reference value of each defect to be screened obtained in step S103 with a preset reference threshold value, and determining the defect to be screened corresponding to the screening reference value greater than or equal to the preset reference threshold value as a target defect. For example, the screening reference value of each defect to be screened A, B, C, D, F, G · of the sample wafer to be screened of the current lot is finally obtained as shown in table one below.
Showing the respective screening reference value of each defect to be screened in the current batch
| To be screened for defect species | Screening reference value F |
| A | 19287 |
| B | 12213 |
| C | 5603 |
| D | 31 |
| F | 1 |
| G | 0.1 |
| ··· | ··· |
The preset reference threshold is set to 5000, then the screening reference value of each defect to be screened in the table above is compared with the preset reference threshold, and the defect to be screened A, B, C is automatically screened as the target defect.
In some embodiments, the preset reference threshold is an empirical value that is set in advance according to a research experiment on the influence of various defects on the failure rate of the chip.
In other embodiments, the preset screening rules include: and screening all the defects to be screened corresponding to the plurality of screening reference values with the reference values ranked in the front from the target defect list to obtain the target defect. Specifically, the step S105 includes: sorting the screening reference values of each defect to be screened in descending order, and determining the defects to be screened corresponding to the screening reference values sorted in the front (specifically, a sorting screening threshold may be preset, such as the front 5 or the front 10) as target defects. For example, the three defects to be screened A, B, C ranked first three in the above table are automatically determined to be target defects.
In other embodiments, the preset screening rules include: and judging various defects to be screened with relatively large screening reference values as target defects. Specifically, the step S105 specifically includes: the plurality of screening reference values obtained in step S103 are sorted in descending order, two adjacent screening reference values before and after sorting are compared, and if the difference between the two screening reference values is smaller than a preset difference threshold (which may be set as required, for example, greater than 10000 or greater than 5000, or greater than 7000), the defects to be screened corresponding to the screening reference values in front of the larger screening reference value in the two screening reference values are determined as target defects. For example, the screening reference value of the first order is compared with the screening reference value of the second order in sequence from large to small, the screening reference value of the second order is compared with the screening reference value of the third order, the screening reference value of the third order is compared with the screening reference value of the fourth order, and so on until two to-be-screened reference values with a difference value smaller than or equal to a preset difference threshold value appear for the first time, and then the to-be-screened defects corresponding to the screening reference values in front of the larger screening reference value in the two to-be-screened reference values are determined as target defects. For example, the first defect a to be screened in the above-mentioned order is compared with the second defect B to be screened to obtain a difference 7074, which is greater than the preset difference threshold 5000, the second defect B to be screened in the above-mentioned order is continuously compared with the third defect C to be screened to obtain a difference 6610, which is greater than the preset difference threshold 5000, the third defect C to be screened in the above-mentioned order is continuously compared with the fourth defect D to be screened to obtain a difference 5572, which is greater than the preset difference threshold 5000, the fourth defect D to be screened in the above-mentioned order is continuously compared with the fifth defect F to be screened to obtain a difference 30, which is less than the preset difference threshold 5000, so that the defect a to be screened before the fourth defect D to be screened is continuously screened, B. And C, automatically judging as the target defect.
Of course, based on the same principle, sorting is performed in the order from small to large, then comparison is performed from the last two bits until two to-be-screened reference values with a difference value smaller than or equal to a preset difference threshold are found, and then the to-be-screened defects corresponding to the screening reference values arranged in front of the to-be-screened reference values are determined as target defects according to the larger screening reference value boundary of the two to-be-screened reference values.
Example two
Referring to fig. 4, a functional module of the rapid screening apparatus for target defects on a wafer according to an exemplary embodiment of the present invention is schematically illustrated. Specifically, the rapid screening device of the present exemplary embodiment includes:
the data acquisition module 41 is configured to acquire screening parameters of each defect to be screened in a target area of all sample wafers to be screened;
the data processing module 42 is configured to determine, according to each screening parameter acquired by the data acquisition module, a respective screening reference value of each defect to be screened in the target area of all sample wafers to be screened;
and a defect screening module 43, configured to screen a target defect from various defects to be screened according to each screening reference value obtained by the data processing module and a preset screening rule.
In some embodiments, the screening parameters described above include: uniqueness weight, severity weight, universality weight, and custom constants.
Wherein the uniqueness weight is used for measuring whether the current type of defect to be screened is specific to the target area or more appears in the target area and less appears in the reference area. In some embodiments, the unique weight may be expressed as a ratio of the total number of a certain type of defect to be screened in the target area of all sample wafers to be screened to the total number of the certain type of defect to be screened in the reference area of all sample wafers to be screened (i.e., the ratio of the number of the certain type of defect to be screened in the target area to the number of the certain type of defect to be screened in the reference area). Correspondingly, the larger the ratio, i.e. the greater the uniqueness weight, the greater the probability that the defect to be screened will appear in the target area than the reference area, reflecting from the side that the type of defect may be specific to the target area. Of course, if such a defect to be screened does not appear in the reference area, the ratio is infinite.
Accordingly, the data obtaining module 41 specifically includes:
the first data acquisition unit is used for acquiring the number of each type of defect to be screened in a target area on all sample wafers to be screened; specifically, defect scanning equipment such as an SEM and the like is adopted in advance to perform batch scanning on sample wafers to be screened, so that parameters such as types, positions (or coordinates), sizes and the like of all defects on each sample wafer to be screened are obtained, an area to which each defect belongs can be determined according to the position or the coordinate of each defect (specifically, the position or the coordinate of the defect can be compared with the radius/diameter of a preset divided area), and then the number of each defect to be screened in a target area of all sample wafers to be screened is counted;
the second data acquisition unit is used for acquiring the number of each type of defect to be screened in the reference area on all sample wafers to be screened; specifically, the area to which each defect on each sample wafer belongs can be determined according to the position or the coordinate of each defect on each wafer, and the defect to be screened appearing in the target area may also appear in the reference area, and naturally, the respective number of each defect to be screened in the reference area of all the sample wafers to be screened can also be obtained;
the first data processing unit is used for determining the respective uniqueness weight of each defect to be screened according to the respective number of each defect to be screened in all the target areas acquired by the first data acquisition unit and the respective number of each defect to be screened in all the reference areas acquired by the second data acquisition unit; specifically, the unique weight may be expressed as a ratio of the total number of each defect to be screened in the target area of all sample wafers to be screened to the total number of each defect to be screened in the reference area of all sample wafers to be screened.
Wherein the severity weight is used to measure the severity of the occurrence of the defect to be screened in the target area. In some embodiments, the severity weight refers to the frequency of occurrence of the defect to be screened within the target area, and in particular, may be expressed as a ratio of the number of such defects to be screened within the target area to the sum of the number of all defects to be screened within the target area. Of course, the greater the frequency of transmission, the greater the severity weight.
Accordingly, in some embodiments, the data acquisition module 41 further comprises:
the third data acquisition unit is used for acquiring the sum of the number of all defects to be screened in the target area on all sample wafers to be screened; specifically, as described above, the respective number of each defect to be screened in the target area of all the sample wafers to be screened is already obtained, and accordingly, the sum of the number of each defect to be screened is added, so as to obtain the sum of the number of all the defects to be screened in the target area of all the sample wafers to be screened;
the second data processing unit is used for determining the severity weight of each defect to be screened in the target area according to the sum of the number of each defect to be screened in the target area acquired by the first data acquisition unit and the number of each defect to be screened in the target area acquired by the third data acquisition unit; specifically, as previously described, the number of each defect to be screened in the target area, and the sum N of the numbers of all defects to be screened, have been obtained, and thus, the ratio of the number of each defect to be screened to the sum of the numbers of all defects to be screened can be obtained.
The universal weight is used for measuring the universality of the defects to be screened appearing in the sample wafer screened at this time. In some embodiments, the universal weight may be specifically expressed as a ratio of the total number of failed dies with the type of screened defect to the total number of dies with the type of screened defect (i.e., the sum of the number of failed dies with the type of screened defect and the number of non-failed dies).
Accordingly, in some embodiments, the data acquisition module 41 further comprises:
the fourth data acquisition unit is used for acquiring the chip sum corresponding to each defect to be screened in the target area; specifically, since each wafer has a plurality of chips, after scanning all sample wafers to be screened, parameters such as respective positions or coordinates, serial numbers, and affiliated areas of all chips on all sample wafers to be screened can be obtained, and can be stored in a database (the database can be disposed in the defect scanning device or the rapid screening device); meanwhile, the type, position or coordinate, the affiliated area and the like of each defect on each sample wafer are stored in the database, so that the affiliated area of each defect can be determined according to the position or coordinate of each defect, and accordingly each defect to be screened in the target area is determined, correspondingly, the chip corresponding to each defect to be screened can also be determined according to the position or coordinate of each defect to be screened and the position or coordinate of each chip, and accordingly the sum of all chips corresponding to each defect to be screened is obtained;
the fifth data acquisition unit is used for acquiring the number of failure chips corresponding to each defect to be screened in the target area; specifically, the failed chips can be identified in the database in advance, so that the number of the failed chips corresponding to each defect to be screened is further obtained on the basis of obtaining the sum of the chips corresponding to each defect to be screened;
the third data processing unit is used for determining the universal weight of each defect to be screened according to the chip sum corresponding to each defect to be screened acquired by the fourth data acquisition unit and the number of the failed chips corresponding to each defect to be screened acquired by the fifth data acquisition unit; specifically, the ratio of the number of failed chips to the total number of chips is the universal weight.
In some embodiments, the defect screening module is specifically configured to compare the screening reference value corresponding to each defect to be screened, obtained by the data processing module, with a preset reference threshold, and determine the defect to be screened, corresponding to the screening reference value greater than or equal to the preset reference threshold, as the target defect.
In other embodiments, the defect screening module specifically includes:
the sorting unit is used for sorting the screening reference values corresponding to each defect to be screened, which are obtained by the data processing module, according to the sequence from big to small;
and the screening unit is used for comparing the two adjacent screening reference values before and after the sorting, and if the difference value between the two screening reference values is greater than or less than a preset difference value threshold value, determining the defects to be screened corresponding to the screening reference value in the two screening reference values which are sorted in the front and the defects to be screened corresponding to the screening reference values which are arranged in front of the screening reference value as target defects.
Of course, in other embodiments, the screening unit may also be specifically configured to screen out from the target defects, the defects to be screened corresponding to several screening reference values that are ranked in the top (for example, the top five or the top four, which may be specifically adjusted according to actual conditions) and all of the defects to be screened are determined as target defects.
EXAMPLE III
In a third aspect of the present invention, a system for rapid screening of target defects on a wafer is provided, which includes: the system comprises a defect scanning device for scanning all sample wafers to be screened in batches and a rapid screening device in data communication with the defect scanning device. The defect scanning device can adopt various existing acquisition equipment such as SEM; the rapid screening device in the second embodiment can be adopted as the rapid screening device.
In a fourth aspect of the invention, an electronic device is provided, comprising a memory 502, a processor 501 and a computer program stored on the memory 502 and executable on the processor 501, wherein the processor 501 executes the program to implement the steps of the method as described above. For convenience of explanation, only the parts related to the embodiments of the present specification are shown, and specific technical details are not disclosed, so that reference is made to the method parts of the embodiments of the present specification. The electronic device may be any electronic device including various electronic devices, a PC computer, a network cloud server, and even a mobile phone, a tablet computer, a PDA (Personal Digital Assistant), a POS (Point of Sales), a vehicle-mounted computer, a desktop computer, and the like.
Specifically, the electronic device shown in fig. 5 in connection with the solution provided by the embodiments of the present description constitutes a block diagram, and the bus 500 may include any number of interconnected buses and bridges that link together various circuits including one or more processors represented by the processor 501 and a memory represented by the memory 502. The bus 500 may also link together various other circuits such as peripherals, voltage regulators, power management circuits, and the like, which are well known in the art, and therefore, will not be described any further herein. A communication interface 503 provides an interface between the bus 500 and the receiver and/or transmitter 504, and the receiver and/or transmitter 504 may be a separate independent receiver or transmitter or may be the same element, such as a transceiver, providing a means for communicating with various other apparatus over a transmission medium. The processor 501 is responsible for managing the bus 500 and general processing, and the memory 502 may be used for storing data used by the processor 501 in performing operations.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solution of the present invention essentially or contributing to the prior art can be embodied in the form of a software product, which is stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) and includes several instructions for enabling a computer terminal (which may be a mobile phone, a computer, a server, or a network device) to execute the above method of the embodiment of the present disclosure.
The computer readable storage medium may include a propagated data signal with readable program code embodied therein, for example, in baseband or as part of a carrier wave. Such a propagated data signal may take many forms, including, but not limited to, electro-magnetic, optical, or any suitable combination thereof. A readable storage medium may also be any readable medium that is not a readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. Program code embodied on a readable storage medium may be transmitted using any appropriate medium, including but not limited to wireless, wireline, optical fiber cable, RF, etc., or any suitable combination of the foregoing.
Program code for carrying out operations for the present disclosure may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, C + + or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computing device, partly on the user's device, as a stand-alone software package, partly on the user's computing device and partly on a remote computing device, or entirely on the remote computing device or server. In the case of a remote computing device, the remote computing device may be connected to the user computing device through any kind of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or may be connected to an external computing device (e.g., through the internet using an internet service provider).
The computer readable medium carries one or more programs which, when executed by a device, cause the computer readable medium to perform the functions of: obtaining screening parameters of each defect to be screened in a target area of all sample wafers to be screened; wherein the screening parameters include: an uniqueness weight, a severity weight, a universality weight, and a custom constant; determining a respective screening reference value of each defect to be screened according to the screening parameters; and automatically screening the target defects from the various defects to be screened according to the screening reference value and a preset screening rule.
Those skilled in the art will appreciate that the modules described above may be distributed in the apparatus according to the description of the embodiments, or may be modified accordingly in one or more apparatuses unique from the embodiments. The modules of the above embodiments may be combined into one module, or further split into multiple sub-modules.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A method for rapid screening of target defects on a wafer, comprising the steps of: obtaining screening parameters of each defect to be screened in a target area of all sample wafers to be screened; wherein the screening parameters include: an uniqueness weight, a severity weight, a universality weight, and a custom constant;
determining a respective screening reference value of each defect to be screened according to the screening parameters; and automatically screening the target defects from the various defects to be screened according to the screening reference value and a preset screening rule.
2. The method according to claim 1, wherein the step of automatically screening the target defect from the plurality of defects to be screened specifically comprises:
and comparing each screening reference value with a preset reference threshold value, and judging the defect to be screened corresponding to the screening reference value which is greater than or equal to the preset reference threshold value as a target defect.
3. The method according to claim 1, wherein the step of automatically screening the target defect from the plurality of defects to be screened specifically comprises:
sorting the screening parameters of the defects to be screened according to the sequence from big to small;
and comparing the two sorted adjacent screening reference values, and if the difference between the two screening reference values is greater than or equal to a preset difference threshold, judging the defects to be screened corresponding to the larger screening reference value in the two screening reference values and the defects to be screened corresponding to each screening reference value sorted in front of the larger screening reference value as target defects.
4. The method according to any one of claims 1 to 3, characterized in that the step of obtaining the uniqueness weight of the defect to be screened comprises in particular:
acquiring the quantity of each defect to be screened in the target area of all sample wafers to be screened;
acquiring the number of each defect to be screened in a reference area of all sample wafers to be screened;
and determining the respective unique weight of each defect to be screened according to the respective number of each defect to be screened in the target area and the respective number of each defect to be screened in the reference area.
5. The method according to claim 4, characterized in that the step of obtaining the severity weight of the defect to be screened comprises in particular:
acquiring the total number of all defects to be screened in the target area of all sample wafers to be screened;
and determining the severity weight of each defect to be screened according to the respective number of each defect to be screened in the target area and the sum of the number of all defects to be screened.
6. The method of claim 4, wherein the step of obtaining the universal weight comprises:
obtaining the chip sum corresponding to each defect to be screened;
acquiring the number of failure chips corresponding to each defect to be screened;
and determining the respective universality weight of each defect to be screened according to the number of the failed chips corresponding to each defect to be screened and the sum of the chips.
7. A rapid screening device for target defects on a wafer, comprising:
the data acquisition module is used for acquiring the screening parameters of each defect to be screened in the target area on all the sample wafers to be screened; wherein the screening parameters include: an uniqueness weight, a severity weight, a universality weight, and a custom constant;
the data processing module is used for determining a respective screening reference value of each defect to be screened according to the screening parameters acquired by the data acquisition module;
and the defect screening module is used for automatically screening the target defects from various defects to be screened according to the screening reference value of each defect to be screened determined by the data processing module and a preset screening rule.
8. A system for rapid screening of target defects on a wafer, comprising:
the defect scanning device is used for scanning all sample wafers to be screened in batches to obtain the attribute characteristics of each defect on each sample wafer to be screened;
the rapid screening device of claim 7, in data communication with the defect scanning device.
9. An electronic device comprising at least one processor, at least one memory, a communication interface, and a bus; the processor, the memory and the communication interface complete mutual communication through the bus;
the memory is used for storing a program for executing the method of any one of claims 1 to 6; the processor is configured to execute programs stored in the memory.
10. A computer-readable storage medium, in which a computer program is stored, which, when being executed by a processor, controls an apparatus of the storage medium to carry out the steps of the method according to any one of claims 1 to 6.
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