CN112975592B - Polishing process of indium phosphide substrate - Google Patents
Polishing process of indium phosphide substrate Download PDFInfo
- Publication number
- CN112975592B CN112975592B CN202110331419.5A CN202110331419A CN112975592B CN 112975592 B CN112975592 B CN 112975592B CN 202110331419 A CN202110331419 A CN 202110331419A CN 112975592 B CN112975592 B CN 112975592B
- Authority
- CN
- China
- Prior art keywords
- polishing
- cathode
- anode
- indium phosphide
- disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
Abstract
The utility model provides a polishing technology of indium phosphide substrate, belongs to indium phosphide polishing technical field, the burnishing device based on indium phosphide realizes, burnishing device includes the electrolysis trough, with the help of positive pole elevating system location at the positive pole dish bracing piece that electrolysis trough bottom central point put, articulate at the positive pole dish of positive pole dish bracing piece upper end, with the help of the negative pole dish bracing piece of negative pole elevating system location in positive pole dish top, set up the negative pole dish at negative pole dish bracing piece lower extreme, set up the graphite electrode board on the positive pole dish with the help of coupling mechanism, set up the planetary gear set at graphite electrode board up end with the help of middle actuating mechanism, the positive pole rotation actuating mechanism who is connected with middle actuating mechanism, the negative pole rotation actuating mechanism who is connected with the negative pole dish bracing piece and with the help of the polishing DC power supply of wire respectively with the contact connection of positive pole dish bracing piece and negative pole dish bracing piece. By improving the structure and the process of the device and combining the advantages of electrochemical polishing and mechanical polishing technologies, the requirement of the polishing process of the indium phosphide on the environment is greatly reduced, and the polishing effect is ideal.
Description
Technical Field
The invention belongs to the technical field of indium phosphide polishing, and particularly relates to a polishing process of an indium phosphide substrate.
Background
The InP material is an important III-V group compound semiconductor material, has the characteristics of high electron mobility and high saturation drift rate, is a main base material for realizing millimeter wave circuits and terahertz electronic devices, has the characteristics of high frequency, low noise, high efficiency, radiation resistance and the like, is the first choice of frequency bands above 100GHz, has excellent performance in W-band and higher-frequency millimeter wave circuits, and is widely applied to the fields of optical fiber communication, mobile communication, medical imaging, terahertz communication and the like.
The polishing technology of InP is an important index for measuring the preparation level of InP, and the flatness and low roughness of a polishing interface are important for subsequent epitaxial growth. Generally, the polishing of the InP single crystal substrate mainly uses an electrochemical polishing technique or a mechanical polishing technique, but the polishing effect of the InP single crystal substrate and the polishing effect of the InP single crystal substrate are not stable, the polishing uniformity is not ideal, and particularly, the chemical composition of the polishing solution used in the electrochemical polishing technique is complex and has high environmental requirements. Therefore, how to realize the InP polishing technology with low cost and ideal polishing effect becomes a difficult problem to be solved urgently.
Disclosure of Invention
The invention aims to solve the technical problem of providing a polishing process of an indium phosphide substrate, which greatly reduces the requirement on the environment in the polishing process of the indium phosphide by improving the structure and the process of a device and combining the advantages of electrochemical polishing and mechanical polishing technologies and has ideal polishing effect.
The technical scheme adopted by the invention is as follows: a polishing process of an indium phosphide substrate is realized on the basis of a polishing device of indium phosphide, the polishing device comprises an electrolytic bath, an anode disc supporting rod positioned at the central position of the bottom of the electrolytic bath by virtue of an anode lifting mechanism, an anode disc hinged at the upper end of the anode disc supporting rod, a cathode disc supporting rod positioned above the anode disc by virtue of a cathode lifting mechanism, a cathode disc arranged at the lower end of the cathode disc supporting rod, polishing cloth positioned at the lower end face of the cathode disc by virtue of a cathode polishing cloth clamp, a graphite electrode plate arranged on the anode disc by virtue of a connecting mechanism, a planetary wheel set arranged at the upper end face of the graphite electrode plate by virtue of an intermediate driving mechanism, polishing cloth positioned between the graphite electrode plate and the planetary wheel by virtue of the anode polishing cloth clamp, an anode rotation driving mechanism connected with the intermediate driving mechanism, a cathode rotation driving mechanism connected with the cathode disc supporting rod, and a polishing direct current connected with the contacts of the anode disc supporting rod and the cathode disc supporting rod by virtue of leads respectively The cathode disc supporting rod is provided with a polishing liquid injection assembly;
the polishing process comprises the following steps:
firstly, an indium phosphide substrate is arranged in a substrate groove of a planetary gear;
secondly, the polishing cloth positioned on the lower end face of the cathode disc is contacted with the indium phosphide substrate by means of a cathode lifting mechanism, and the polishing pressure between the cathode disc and the graphite electrode plate is kept at 40-400 g/cm2Within the range;
injecting electrolyte into the electrolytic bath until the electrolyte submerges the cathode disc through the polishing solution injection assembly;
fourthly, the cathode disc and the graphite electrode plate rotate in opposite directions by means of the driving of the anode rotation driving mechanism and the cathode rotation driving mechanism, and meanwhile, polishing liquid is injected through the polishing liquid injection assembly; after the cathode disc and the graphite electrode plate rotate for 2-3min, starting the stirrer, connecting a polishing direct current power supply and opening a stop valve of an electrolyte discharge pipe;
after electrochemical mechanical polishing is started for 9-12min, the polishing direct current power supply, the anode rotation driving mechanism and the cathode rotation driving mechanism are turned off; separating the cathode disk and the graphite electrode plate by means of a cathode lifting mechanism; then, the indium phosphide substrate is positioned above the liquid level of the electrolyte by virtue of an anode lifting mechanism, and the indium phosphide substrate is taken out;
testing the roughness of one surface of the indium phosphide substrate facing the anode; when the required roughness can not be achieved, the indium phosphide substrate is put into the substrate groove as it is, and the steps II, IV and V are repeated; when the required roughness is achieved, the indium phosphide substrate is placed in the substrate groove after being inverted, and the steps II, IV and V are repeated;
seventhly, after the two sides of the indium phosphide substrate are polished, stopping injecting polishing liquid and electrolyte into the polishing liquid injection assembly, stopping the movement of the stirrer and exhausting the electrolyte;
and step eight, cleaning, drying and packaging the indium phosphide substrate meeting the polishing requirement.
Furthermore, the middle driving mechanism comprises a gear shaft arranged in the anode disc supporting rod, a gear which is connected with the gear shaft and is positioned at the central shaft position of the graphite electrode plate and an inner gear which is positioned at the upper end face of the graphite electrode plate by means of a fixing clamp, the planetary gear is meshed between the inner gear and the gear, and the lower end of the gear shaft is connected with the anode rotation driving mechanism.
Further, the polishing solution injection assembly comprises a polishing solution injection main pipe arranged in the cathode disc support rod and a polishing solution injection branch pipe group connected with the polishing solution injection main pipe and arranged in the cathode disc, wherein a slurry pipe and an electrolyte injection pipe are respectively arranged at the upper end of the polishing solution injection main pipe, and a feeding hole matched with an outlet of the polishing solution injection branch pipe is formed in the polishing cloth positioned on the lower end face of the cathode disc.
Furthermore, a substrate groove group and an air guide hole group are arranged in the planetary wheel.
Further, an electrolyte discharge pipe with a stop valve is arranged at the middle position of the side part of the electrolytic bath.
Furthermore, a stirrer is arranged at the bottom in the electrolytic cell.
Furthermore, the surface layers of the anode disc supporting rod and the cathode disc supporting rod are sequentially provided with a ceramic protective layer and an acid-proof paint layer from inside to outside.
Further, the anode lifting mechanism and the cathode lifting mechanism are connected with the electrolytic bath by virtue of connecting columns; the cathode lifting mechanism comprises a cathode guide post arranged on the side part of the electrolytic bath by virtue of a connecting post and a cathode support table arranged on the cathode guide post by virtue of cathode guide driving, and the cathode support table is connected with a cathode disc support rod; the anode lifting mechanism comprises an anode guide post arranged below the side part of the electrolytic cell by virtue of a base and a connecting post, and an anode supporting table arranged on the anode guide post by virtue of anode guide driving, wherein the anode supporting table is connected with the anode disc supporting rod.
The beneficial effects produced by adopting the invention are as follows: the roughness of the polished surface of the indium phosphide substrate can reach 0.3nm by adopting a mode of organically combining mechanical polishing and chemical polishing; the invention can change the selection range of the electrolyte and the polishing solution, can achieve the technical requirements and the polishing effect by adopting the low-cost electrolyte and the polishing solution, and greatly saves the production cost.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of the assembly of the pinion and intermediate drive;
FIG. 3 is a schematic view of a wandering star;
FIG. 4 is a schematic view of a polishing cloth positioned on the lower end face of the cathode disk;
in the drawings: 1 is a cathode disc, 1-1 is a polishing solution injection branch pipe, 2 is a gear, 3 is an electrolytic bath, 4 is a stirrer, 5 is an indium phosphide substrate, 6 is an electrolyte, 7 is an anode disc, 8 is an anode disc support rod, 8-1 is an anode disc rotating snap ring, 9 is a graphite electrode plate, 10 is a fixing bolt, 11 is an anode polishing cloth clamp, 12 is an electrolyte discharge pipe, 13 is polishing cloth, 13-1 is a feed hole, 13-2 is a gear hole, 14 is an internal gear, 14-1 is a fixing clamp, 15 is a lead, 16 is a cathode disc support rod, 16-1 is a polishing solution injection branch pipe, 16-2 is a slurry pipe, 16-3 is an electrolyte injection pipe, and 17 is a wandering star wheel; 17-1 is a substrate bath; 17-2 is a gas-guide hole; 18: a cathode polishing cloth clamp, 19 is a fixing rod, 20 is a polishing direct current power supply, 21 is a gear shaft, 21-1 is a key, 31 is a cathode guide column, and 31-1 is a base; 31-2 is a connecting column, 32 is a cathode guide drive, 32-1 is a cathode support table, 32-2 is a cathode rotation drive mechanism, 32-3 is a cathode disk snap ring arm, 32-4 is a fixed ring arm, 33 is an anode guide drive, 33-1 is an anode support table, 33-2 is an anode rotation drive mechanism, 33-3 is a gear shaft drive arm, 33-4 is an anode disk snap ring arm, 33-5 is a gear shaft drive, and 34 is an anode guide column.
Detailed Description
Referring to fig. 1, the polishing apparatus for indium phosphide of the present invention comprises an electrolytic bath 3, an anode disc support rod 8 positioned at the center of the bottom of the electrolytic bath 3 by means of an anode elevating mechanism, an anode disc 7 hinged to the upper end of the anode disc support rod 8, a cathode disc support rod 16 positioned above the anode disc 7 by means of a cathode elevating mechanism, a cathode disc 1 disposed at the lower end of the cathode disc support rod 16, a polishing cloth 13 positioned at the lower end face of the cathode disc 1 by means of a cathode polishing cloth clamp 18, a graphite electrode plate 9 disposed on the anode disc 7 by means of a connecting mechanism, a set of wandering pinions 17 disposed at the upper end face of the graphite electrode plate 9 by means of an intermediate driving mechanism, a polishing cloth 13 positioned between the graphite electrode plate 9 and the wandering pinions 17 by means of an anode polishing cloth clamp 11, an anode rotation driving mechanism connected to the intermediate driving mechanism, a cathode rotation driving mechanism connected to the cathode disc support rod 16, and a touch pad supporting rod 8 and a cathode disc support rod 16 by means of a lead wire, respectively A point-connected polishing direct current power supply 20, and the cathode disc support rod 16 is provided with a polishing liquid injection assembly. The attachment mechanism is a fixing bolt 10.
Referring to fig. 2, the intermediate driving mechanism includes a gear shaft 21 disposed in the anode disk support rod 8, a gear 2 connected to the gear shaft 21 and positioned at the central axis position of the graphite electrode plate 9, and an internal gear 14 positioned at the upper end surface of the graphite electrode plate 9 by means of a fixing jig 14-1, the planetary gear 17 is engaged between the internal gear 14 and the gear 2, and the lower end of the gear shaft 21 is connected to an anode rotation driving mechanism. The gear shaft 21 and the gear 2 are connected by a key 21-1.
Referring to fig. 3, the wandering star 17 is provided therein with a substrate groove 17-1 group and an air guide hole 17-2 group. An electrolyte discharge pipe 12 with a shut-off valve is provided at a position midway on the side of the electrolytic bath 3. A stirrer 4 is provided at the bottom of the electrolytic bath 3. And the surface layers of the anode disc supporting rod 8 and the cathode disc supporting rod 16 are sequentially provided with a ceramic protective layer and an acid-proof paint layer from inside to outside. The anode disc 7 is provided with a ceramic protective layer and an acid-proof paint layer on the surface layer contacting with the electrolyte. There is no ceramic protective layer and acid-proof paint layer between the anode disk 7 and the graphite electrode plate 9, and it is directly contacted with the graphite electrode plate 9. Graphite paper is placed between the anode disc 7 and the graphite electrode plate 9 and is tightly pressed through the fixing bolt 10, so that electrolyte is prevented from entering the contact surface of the anode disc and the graphite electrode plate, and a good conductive effect is achieved.
Referring to FIG. 1, the internal gear 14 is assembled to the fixing jig 14-1 and fixed to the bottom of the electrolytic bath 3. The graphite electrode plate 9 and the anode disk 7 are fixed together by a fixing bolt 10. The anode disc support rod 8 is internally fitted with a gear shaft 21. The anode disk 7 is fixed to the anode disk support rod 8, and the gear 2 is fitted to the gear shaft 21. Then the anode disk support rod 8 is fixed on the anode rotation driving mechanism through the anode disk rotation snap ring 8-1. The gear shaft 21 is then assembled to the gear shaft drive 33-5. Then, the polishing cloth 13 was fixed to the graphite electrode plate 9 by an anode polishing cloth holder 11. The planetary wheel 17 is placed on the anode polishing cloth 13 and engaged with the internal gear 14 and the gear 2.
Referring to the attached drawings 1 and 4, the polishing solution injection assembly comprises a main polishing solution injection pipe 16-1 arranged in a cathode disc support rod 16 and a group of branch polishing solution injection pipes 1-1 connected with the main polishing solution injection pipe 16-1 and arranged in a cathode disc 1, the upper end of the main polishing solution injection pipe 16-1 is respectively provided with a slurry pipe 16-2 and an electrolyte injection pipe 16-3, and a feed hole 13-1 matched with an outlet of the branch polishing solution injection pipe 1-1 is arranged on a polishing cloth 13 positioned on the lower end face of the cathode disc 1. The slurry pipe 16-2 and the electrolyte injection pipe 16-3 are assembled together by a fixing rod 19, then the fixing rod 19 is fixed into the polishing solution injection main pipe 16-1 by a rubber ring, and the cathode disk support rod 16 penetrates through the upper disk rotating snap ring 16-5 and is assembled on a cathode rotating drive mechanism for ensuring the stable rotation of the cathode polishing disk 1. The upper end of the fixing rod 19 is mounted to the fixing ring 16-4 for fixing the slurry pipe 16-2 and the electrolyte injection pipe 16-3. The fixed ring 16-4 is connected with the cathode support platform 32-1 through a fixed ring arm 32-4 and is used for ensuring that the slurry pipe 16-2 and the electrolyte injection pipe 16-3 are static and stably supply liquid in the rotating process of the cathode disc support rod 16. The cathode disk support rod 16 is assembled with the cathode polishing disk 1. The polishing liquid injection main pipe 16-1 inside the polishing liquid injection main pipe is matched with the polishing liquid injection branch pipe 1-1, and the cathode polishing cloth clamp 18 is used for fixing the polishing cloth 13 on the cathode polishing disk 1.
Referring to fig. 1, the anode lifting mechanism and the cathode lifting mechanism are connected with the electrolytic bath 3 by a connecting column 31-2; the cathode lifting mechanism comprises a cathode guide column 31 arranged at the side part of the electrolytic bath 3 by a connecting column 31-2, and a cathode support table 32-1 arranged on the cathode guide column 31 by a cathode guide drive 32, wherein the cathode support table 32-1 is connected with the cathode disc support rod 16; the anode lifting mechanism comprises an anode guide column 34 arranged below the side part of the electrolytic bath 3 by virtue of a base 31-1 and a connecting column 31-2, and an anode support table 33-1 arranged on the anode guide column 34 by virtue of an anode guide drive 33, wherein the anode support table 33-1 is connected with the anode disc support rod 8.
Referring to FIG. 1, the upper disk rotating collar 16-5 is connected to a cathode support platform 32-1 by a cathode disk collar arm 32-3. The cathode rotation driving mechanism is directly connected to the cathode support table 32-1. The cathode support table 32-1 is connected with the cathode guide driver 32 to realize the up-and-down movement of the whole cathode; the anode disk rotating snap ring 8-1 is connected with the anode supporting platform 33-1 through an anode disk snap ring arm 33-4. The cathode rotation driving mechanism is directly connected to the anode supporting base 33-1. The gear shaft drive 33-5 is connected to the anode support table 33-1 through the gear shaft drive arm 33-3. The anode support table 33-1 is connected to an anode guide drive 33 to effect up-and-down movement of the entire anode.
The action mechanism of the invention is as follows: in neutral or weakly acidic electrolyte such as sodium chloride, potassium chloride and the like, a graphite electrode plate 9 is used as a cathode and is arranged in an electrolytic tank 3, porous polishing cloth 13 is arranged on the graphite electrode plate 9 in electrochemical polishing, an anode is arranged in the electrolytic tank 3, and the indium phosphide substrate is electrochemically polished by the porous polishing cloth 13 and chlorine generated by electrolysis; in the process, alumina or silica slurry can be put into the electrolytic bath 3 to realize mechanical polishing of the indium phosphide substrate.
Sending the polishing slurry and electrolyte to the middle of a polishing disc together for polishing, wherein the polishing disc is used as an electrode in the polishing process, and an electrochemical reaction occurs: and (3) cathode reaction: 2H++2e→H2(g) (ii) a And (3) anode reaction: 2Cl--2e→Cl2(g) (ii) a The formed chlorine reacts with the indium phosphide substrate: cl2+ In-P → In-Cl + P-Cl, and simultaneously, due to the mechanical grinding action of the polishing slurry, the electrochemical and mechanical double polishing of the indium phosphide substrate is realized.
The polishing process of the invention comprises the following steps:
firstly, an indium phosphide substrate 5 is arranged in a substrate groove 17-1 of a planetary gear 17;
secondly, the polishing cloth 13 positioned on the lower end face of the cathode disc 1 is contacted with the indium phosphide substrate 5 by means of a cathode lifting mechanism, and the polishing pressure between the cathode disc 1 and the graphite electrode plate 9 is kept at 40-400 g/cm2Within the range;
injecting electrolyte into the electrolytic tank 3 through the polishing solution injection assembly until the electrolyte submerges the cathode disc 1;
fourthly, the cathode disc 1 and the graphite electrode plate 9 are driven to rotate in opposite directions by the anode rotation driving mechanism and the cathode rotation driving mechanism, and meanwhile, polishing liquid is injected through the polishing liquid injection assembly; after the cathode disc 1 and the graphite electrode plate 9 rotate for 2-3min, starting the stirrer 4, connecting the polishing direct current power supply 20 and opening a stop valve of the electrolyte discharge pipe 12;
after electrochemical mechanical polishing is started for 9-12min, the polishing direct current power supply 20, the anode rotation driving mechanism and the cathode rotation driving mechanism are closed to drive; separating the cathode disk 1 and the graphite electrode plate 9 by means of a cathode lifting mechanism; then, by means of an anode lifting mechanism, the indium phosphide substrate 5 is positioned above the liquid level of the electrolyte 6, and the indium phosphide substrate 5 is taken out;
step sixthly, testing the roughness of one surface of the indium phosphide substrate 5 facing the anode; when the required roughness can not be achieved, the indium phosphide substrate 5 is placed into the substrate groove 17-1 as it is, and the steps II, IV and V are repeated; when the required roughness is achieved, the indium phosphide substrate 5 is reversed and then placed in the substrate groove 17-1, and the steps II, IV and V are repeated;
seventhly, after the two surfaces of the indium phosphide substrate 5 are polished, stopping injecting polishing liquid and electrolyte into the polishing liquid injection assembly, stopping the movement of the stirrer 4, and discharging the electrolyte;
step eight, cleaning, drying and packaging the indium phosphide substrate 5 meeting the polishing requirement.
The specific polishing process of the invention is as follows: the indium phosphide substrate 5 was placed in the substrate tank 17-1. The electrolytic solution is injected into the electrolytic bath 3 until the cathode disk 1 can be submerged, and the cathode disk 1 is lowered until the polishing cloth 13 comes into contact with the indium phosphide substrate 5. The cathode support rod 16 and the anode support rod 8 make the cathode disk 1 and the anode polishing disk 7 rotate in opposite directions. And meanwhile, the polishing solution is injected into the polishing solution injection main pipe 16-1 through the slurry pipe 16-2 and the electrolyte injection pipe 16-3, is sent to the polishing cloth 13 through the polishing solution injection branch pipe 1-2, and enters the indium phosphide substrate 5 and the graphite electrode plate 9 through the feeding hole 13-1 on the polishing cloth 13, after the cathode disc 1 and the anode polishing disc 7 rotate for 2-3min, the direct-current power supply 20 is switched on to start electrochemical mechanical polishing, and simultaneously, the stirrer 4 is started and the electrolyte discharge pipe 12 is opened. In the polishing process, after a period of time, the polishing direct current power supply 20 is turned off, the rotation of the cathode disk 1 and the anode polishing disk 7 is stopped, and the cathode disk 1 and the anode polishing disk 7 are separated. And (3) lifting the cathode support rod 8 and the anode support rod 16 to enable the indium phosphide substrate 5 to be positioned above the liquid level of the electrolyte, taking out the indium phosphide substrate 5, and testing the polishing condition. After the side of the indium phosphide substrate 5 facing the anode side was polished to a desired roughness, the indium phosphide substrate 5 was inverted, and the above-described steps were repeated to start polishing the other side. After polishing, the slurry and the electrolyte are stopped from being injected into the slurry pipe 16-2 and the electrolyte injection pipe 16-3, and the electrolyte discharge pipe 12 is closed. The rotation of the cathode disk 1 and the anode polishing disk 7 is stopped. And lifting the cathode disc 1, stopping the movement of the stirrer 4, draining the electrolyte, taking out the indium phosphide substrate 5, cleaning, drying and packaging the indium phosphide substrate.
Claims (7)
1. A polishing process of an indium phosphide substrate is realized on the basis of a polishing device of indium phosphide, and is characterized in that the polishing device comprises an electrolytic bath (3), an anode disc support rod (8) positioned at the central position of the bottom of the electrolytic bath (3) by virtue of an anode lifting mechanism, an anode disc (7) hinged at the upper end of the anode disc support rod (8), a cathode disc support rod (16) positioned above the anode disc (7) by virtue of the cathode lifting mechanism, a cathode disc (1) arranged at the lower end of the cathode disc support rod (16), polishing cloth (13) positioned at the lower end face of the cathode disc (1) by virtue of a cathode polishing cloth clamp (18), a graphite electrode plate (9) arranged on the anode disc (7) by virtue of a connecting mechanism, a wandering star wheel (17) group arranged at the upper end face of the graphite electrode plate (9) by virtue of an intermediate driving mechanism, and the polishing cloth (13) positioned between the graphite electrode plate (9) and the wandering star wheel (17) by virtue of the anode polishing cloth clamp (11), An anode rotation driving mechanism connected with the middle driving mechanism, a cathode rotation driving mechanism connected with the cathode disc supporting rod (16), and a polishing direct current power supply (20) respectively connected with contacts of the anode disc supporting rod (8) and the cathode disc supporting rod (16) by virtue of wires, wherein the cathode disc supporting rod (16) is provided with a polishing solution injection assembly, and the bottom in the electrolytic bath (3) is provided with a stirrer (4);
the polishing process comprises the following steps:
firstly, an indium phosphide substrate (5) is arranged in a substrate groove (17-1) of a planetary gear (17);
secondly, the polishing cloth (13) positioned on the lower end face of the cathode disc (1) is contacted with the indium phosphide substrate (5) by means of a cathode lifting mechanism, and the polishing pressure between the cathode disc (1) and the graphite electrode plate (9) is kept between 40 and 400 g/cm2Within the range;
injecting electrolyte into the electrolytic tank (3) through the polishing solution injection assembly until the electrolyte submerges the cathode disc (1);
fourthly, the cathode disc (1) and the graphite electrode plate (9) rotate in opposite directions by means of the driving of the anode rotation driving mechanism and the cathode rotation driving mechanism, and meanwhile, polishing liquid is injected through the polishing liquid injection assembly; after the cathode disc (1) and the graphite electrode plate (9) rotate for 2-3min, starting the stirrer (4), connecting the polishing direct current power supply (20) and opening a stop valve of the electrolyte discharge pipe (12);
after electrochemical mechanical polishing is started for 9-12min, the polishing direct current power supply (20), the anode rotation driving mechanism and the cathode rotation driving mechanism are closed to drive; separating the cathode disc (1) and the graphite electrode plate (9) by means of a cathode lifting mechanism; then, by means of an anode lifting mechanism, the indium phosphide substrate (5) is positioned above the liquid level of the electrolyte (6), and the indium phosphide substrate (5) is taken out;
step sixthly, testing the roughness of one surface of the indium phosphide substrate (5) facing to the anode; when the required roughness can not be achieved, the indium phosphide substrate (5) is placed into the substrate groove (17-1) as it is, and the steps (II), (IV) and (V) are repeated; when the required roughness is achieved, the indium phosphide substrate (5) is reversed and then placed into a substrate groove (17-1), and the steps II, IV and V are repeated;
step seventhly, after the two surfaces of the indium phosphide substrate (5) are polished, stopping injecting the polishing solution into the assembly, injecting the polishing solution and the electrolyte, stopping the movement of the stirrer (4), and discharging the electrolyte;
and step eight, cleaning, drying and packaging the indium phosphide substrate (5) meeting the polishing requirement.
2. The process of polishing an indium phosphide substrate as set forth in claim 1, wherein: the middle driving mechanism comprises a gear shaft (21) arranged in the anode disc supporting rod (8), a gear (2) connected with the gear shaft (21) and positioned at the central axis position of the graphite electrode plate (9), and an inner gear (14) positioned at the upper end face of the graphite electrode plate (9) by means of a fixing clamp (14-1), the planetary gear (17) is meshed between the inner gear (14) and the gear (2), and the lower end of the gear shaft (21) is connected with an anode rotation driving mechanism.
3. The process of polishing an indium phosphide substrate as set forth in claim 1, wherein: the polishing solution injection assembly comprises a polishing solution injection main pipe (16-1) arranged in a cathode disc support rod (16) and a polishing solution injection branch pipe (1-1) group which is connected with the polishing solution injection main pipe (16-1) and arranged in the cathode disc (1), wherein the upper end of the polishing solution injection main pipe (16-1) is respectively provided with a slurry pipe (16-2) and an electrolyte injection pipe (16-3), and a feeding hole (13-1) matched with an outlet of the polishing solution injection branch pipe (1-1) is formed in polishing cloth (13) positioned on the lower end face of the cathode disc (1).
4. The process of polishing an indium phosphide substrate as set forth in claim 1, wherein: the wandering star wheel (17) is internally provided with a substrate groove (17-1) group and an air guide hole (17-2) group.
5. The process of polishing an indium phosphide substrate as set forth in claim 1, wherein: an electrolyte discharge pipe (12) with a stop valve is arranged at the middle position of the side part of the electrolytic tank (3).
6. The process of polishing an indium phosphide substrate as set forth in claim 1, wherein: and the surface layers of the anode disc supporting rod (8) and the cathode disc supporting rod (16) are sequentially provided with a ceramic protective layer and an acid-proof paint layer from inside to outside.
7. The process of polishing an indium phosphide substrate as set forth in claim 1, wherein: the anode lifting mechanism and the cathode lifting mechanism are connected with the electrolytic bath (3) by a connecting column (31-2); the cathode lifting mechanism comprises a cathode guide column (31) arranged at the side part of the electrolytic bath (3) by means of a connecting column (31-2), and a cathode support platform (32-1) arranged on the cathode guide column (31) by means of a cathode guide drive (32), wherein the cathode support platform (32-1) is connected with a cathode disc support rod (16); the anode lifting mechanism comprises an anode guide post (34) arranged below the side part of the electrolytic tank (3) by means of a base (31-1) and a connecting post (31-2), and an anode support platform (33-1) arranged on the anode guide post (34) by means of an anode guide drive (33), wherein the anode support platform (33-1) is connected with the anode disc support rod (8).
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110331419.5A CN112975592B (en) | 2021-03-29 | 2021-03-29 | Polishing process of indium phosphide substrate |
| PCT/CN2021/104413 WO2022205656A1 (en) | 2021-03-29 | 2021-07-05 | Polishing device and polishing process for indium phosphide substrate |
| US17/797,395 US20240035192A1 (en) | 2021-03-29 | 2021-07-05 | Polishing Device for Indium Phosphide Substrate, and Polishing Process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110331419.5A CN112975592B (en) | 2021-03-29 | 2021-03-29 | Polishing process of indium phosphide substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112975592A CN112975592A (en) | 2021-06-18 |
| CN112975592B true CN112975592B (en) | 2022-02-15 |
Family
ID=76337771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110331419.5A Active CN112975592B (en) | 2021-03-29 | 2021-03-29 | Polishing process of indium phosphide substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112975592B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022205656A1 (en) * | 2021-03-29 | 2022-10-06 | 中国电子科技集团公司第十三研究所 | Polishing device and polishing process for indium phosphide substrate |
| CN113774473A (en) * | 2021-10-26 | 2021-12-10 | 安徽亚兰密封件股份有限公司 | Novel electrochemical polishing device and method |
| CN113897662B (en) * | 2021-11-11 | 2022-11-25 | 浙江工业大学 | Movable device and method for electropolishing TC4 titanium alloy |
| TW202339883A (en) * | 2021-11-15 | 2023-10-16 | 亞毅精密股份有限公司 | System and method of thinning wafer substrate |
| CN114523407A (en) * | 2022-01-26 | 2022-05-24 | 苏州中砥半导体材料有限公司 | Indium phosphide single crystal preparation system and method |
| CN115383607B (en) * | 2022-09-21 | 2023-12-22 | 西北有色金属研究院 | Simple nondestructive polishing die for long and thin wire rod and application method of simple nondestructive polishing die |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200402342A (en) * | 2000-08-30 | 2004-02-16 | Micron Technology Inc | Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces |
| CN1966210A (en) * | 2005-11-15 | 2007-05-23 | 不二越机械工业株式会社 | Polishing apparatus and method of polishing work |
| CN101106082A (en) * | 2006-07-13 | 2008-01-16 | 硅电子股份公司 | Method for the simultaneous double-side grinding of a plurality of semiconductor wafers, and semiconductor wafer having outstanding flatness |
| JP2008196047A (en) * | 2006-09-04 | 2008-08-28 | Ebara Corp | Electrolytic liquid for electrolytic polishing and electrolytic polishing method |
| CN102172885A (en) * | 2011-01-31 | 2011-09-07 | 北京通美晶体技术有限公司 | Substrate polishing device and polished substrate thereof |
| JP2011192687A (en) * | 2010-03-12 | 2011-09-29 | Hitachi Metals Ltd | Processing apparatus for semiconductor substrate, method for manufacturing semiconductor substrate, and semiconductor substrate |
| CN102362014A (en) * | 2009-03-27 | 2012-02-22 | 阿西莫公司 | Device and method to conduct an electrochemical reaction on a surface of a semiconductor substrate |
| CN110072956A (en) * | 2016-12-22 | 2019-07-30 | 三井金属矿业株式会社 | Lapping liquid and grinding method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108608314B (en) * | 2018-06-08 | 2019-10-11 | 大连理工大学 | A kind of device and method for two-sided electrochemical mechanical polishing plane institution movement |
-
2021
- 2021-03-29 CN CN202110331419.5A patent/CN112975592B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200402342A (en) * | 2000-08-30 | 2004-02-16 | Micron Technology Inc | Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces |
| CN1966210A (en) * | 2005-11-15 | 2007-05-23 | 不二越机械工业株式会社 | Polishing apparatus and method of polishing work |
| CN101106082A (en) * | 2006-07-13 | 2008-01-16 | 硅电子股份公司 | Method for the simultaneous double-side grinding of a plurality of semiconductor wafers, and semiconductor wafer having outstanding flatness |
| JP2008196047A (en) * | 2006-09-04 | 2008-08-28 | Ebara Corp | Electrolytic liquid for electrolytic polishing and electrolytic polishing method |
| CN102362014A (en) * | 2009-03-27 | 2012-02-22 | 阿西莫公司 | Device and method to conduct an electrochemical reaction on a surface of a semiconductor substrate |
| JP2011192687A (en) * | 2010-03-12 | 2011-09-29 | Hitachi Metals Ltd | Processing apparatus for semiconductor substrate, method for manufacturing semiconductor substrate, and semiconductor substrate |
| CN102172885A (en) * | 2011-01-31 | 2011-09-07 | 北京通美晶体技术有限公司 | Substrate polishing device and polished substrate thereof |
| CN110072956A (en) * | 2016-12-22 | 2019-07-30 | 三井金属矿业株式会社 | Lapping liquid and grinding method |
Non-Patent Citations (1)
| Title |
|---|
| 磷化铟单晶片抛光工艺研究;王云彪等;《电子工艺技术》;20130918;第34卷(第05期);第303-306页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112975592A (en) | 2021-06-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112975592B (en) | Polishing process of indium phosphide substrate | |
| CN109338427B (en) | Electroplating pen device, intelligent electrochemical coating and 3D printing device and using method thereof | |
| KR100339107B1 (en) | Polarization apparatus and apparatus and method related thereto | |
| US6551484B2 (en) | Reverse voltage bias for electro-chemical plating system and method | |
| CN214723256U (en) | Polishing device for indium phosphide substrate | |
| CN104011269A (en) | Film formation device and film formation method for forming metal film | |
| CN112847114A (en) | Polishing device for indium phosphide substrate | |
| EP3206236B1 (en) | Method for horizontally electrochemically depositing metal | |
| CN214736195U (en) | Single-side polishing device for indium phosphide | |
| CN219547133U (en) | Continuous plate type transmission electroplating device | |
| WO2022205656A1 (en) | Polishing device and polishing process for indium phosphide substrate | |
| CN103014800A (en) | Method for preparing cerium-doped graphite-based lead dioxide catalytic electrode | |
| CN219586211U (en) | Laminated plate type electroplating device | |
| CN110257895B (en) | Electrolytic polishing method and device for semiconductor material | |
| CN112160010A (en) | Outer surface coating equipment suitable for neodymium iron boron magnet and use method thereof | |
| CN201180166Y (en) | Electrolytic polishing apparatus for semiconductor material | |
| US20050239292A1 (en) | Device for etching semicnductors with a large surface area | |
| CN106876520B (en) | Control the device of silicon nanowires trend | |
| CN105118888B (en) | Method for preparing cuprous-oxide photoelectric film through copper sulphate | |
| KR20220070893A (en) | Electroplating Radioisotope Apparatus for Manufacturing Betavoltaic Battery | |
| CN213896054U (en) | Cell body improvement mechanism of perpendicular continuous electroplating line | |
| CN106400048B (en) | A kind of electric Fenton cathode material and preparation method thereof based on lignin | |
| CN213417042U (en) | Impact nickel plating bath | |
| CN213417044U (en) | Electroplating apparatus | |
| CN111005048B (en) | Self-stirring device for micro-arc oxidation process equipment and control method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |