CN112959526A - Composite film cutting method, composite film and electronic component - Google Patents
Composite film cutting method, composite film and electronic component Download PDFInfo
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- CN112959526A CN112959526A CN202110155076.1A CN202110155076A CN112959526A CN 112959526 A CN112959526 A CN 112959526A CN 202110155076 A CN202110155076 A CN 202110155076A CN 112959526 A CN112959526 A CN 112959526A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
- B28D5/0029—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rotating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
Abstract
The application provides a composite film cutting method, a composite film and an electronic component, and the method provided by the application comprises the following steps: determining the cleavage direction of the substrate wafer and the vertical direction perpendicular to the cleavage direction according to the cleavage structure of the substrate wafer; forming at least two first gaps parallel to the cleavage direction on the substrate wafer according to the expected size of the composite film; applying pressure to the initial composite film along the direction of the first notch to split the initial composite film to form a cleavage cut surface; the edge damage of the cleavage cutting surface of the thin film layer is less than or equal to 0.5 mu m; forming at least two second notches parallel to the vertical direction on the cleavage cutting surface according to the standard size; and cutting the split composite film along the direction of the second notch to form a second cut surface. The method provided by the application can obtain a smooth cut surface.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a composite film cutting method, a composite film and an electronic component.
Background
With the development of integration of microelectronic technology, the volume of semiconductor components is continuously reduced, and the precision requirement is continuously improved. In the manufacturing process of a semiconductor integrated circuit, a composite film, which is one of the components of a semiconductor device, is cut to prepare the composite film meeting the size requirement of the semiconductor integrated circuit.
In the prior art, a large-size composite film is cut mechanically, so that the composite film meeting the size requirement is obtained. However, the composite film obtained by cutting with a machine has high surface roughness of the cut surface, and the damage of the cut surface is generally uncontrollable, and generally, the damage of the cut surface is more than 3 μm. In order to eliminate the damage of the cut surface of the composite film, the cut composite film needs to be polished. Once the composite film is polished, the composite film is lost in volume, and the polished composite film does not meet the required size requirement.
Therefore, a method for cutting a composite film is needed to avoid the problem that the polished composite film does not meet the size requirement in the conventional composite film cutting method.
Disclosure of Invention
The application provides a composite film cutting method, a composite film and an electronic component, which can be used for solving the problem that the polished composite film does not meet the size requirement easily caused by the composite film cutting method in the prior art.
In a first aspect, the application provides a composite film cutting method, an initial composite film is cut into a composite film which accords with an expected size, the composite film sequentially comprises a film layer and a substrate layer from top to bottom, and the substrate layer is formed by a substrate wafer; the composite film and the initial composite film are structurally identical, the method comprising:
determining the cleavage direction of the substrate wafer and the vertical direction perpendicular to the cleavage direction according to the cleavage structure of the substrate wafer;
forming at least two first gaps parallel to the cleavage direction on the substrate wafer according to the expected size of the composite film; the distance between any two adjacent first gaps is the length of the composite film;
applying pressure to the initial composite film along the direction of the first notch to split the initial composite film to form a cleavage cut surface; the edge damage of a cleavage cutting surface of the thin film layer is less than or equal to 0.5 mu m;
forming at least two second notches parallel to the vertical direction on the cleavage cutting surface according to the standard size; the distance between any two adjacent second notches is the width of the composite film;
and cutting the split composite film along the direction of the second notch to form a second cut surface.
With reference to the first aspect, in an implementation manner of the first aspect, the forming a second cut surface further includes:
and polishing the second cutting surface.
With reference to the first aspect, in an implementation manner of the first aspect, applying pressure to the initial composite film along a direction of the first notch to split the initial composite film to form a cleaved cut surface includes:
and applying pressure to the initial composite film along the direction of the first notch by using a roller to split the initial composite film to form a cleavage cutting surface.
With reference to the first aspect, in an implementation manner of the first aspect, applying pressure to the initial composite film along a direction of the first notch to split the initial composite film to form a cleaved cut surface includes:
sucking any one of two sides of a first notch in the initial composite film by using a sucking disc, and pulling the other side of the first notch in the initial composite film along the first notch to split the initial composite film to form a cleavage cutting surface.
In a second aspect, the present application provides a composite film, the composite film is prepared by the method provided in the first aspect, and the composite film sequentially includes, from top to bottom: a thin film layer and a substrate layer;
the substrate layer comprises a cleavage cut face;
the thin film layer is of a single crystal structure;
the edge damage of the thin film layer is less than or equal to 0.5 mu m.
With reference to the second aspect, in an implementation manner of the second aspect, the material of the thin film layer is any one of lithium niobate, lithium tantalate, quartz, gallium arsenide, or lithium tetraborate; the substrate layer is made of any one of silicon, gallium nitride, gallium arsenide, indium phosphide, silicon carbide, diamond and gallium oxide.
With reference to the second aspect, in an implementable manner of the second aspect, an intermediate layer is further included between the substrate layer and the thin film layer; the intermediate layer is of a single-layer or multi-layer structure.
With reference to the second aspect, in an implementable manner of the second aspect, the thickness of the thin film layer is smaller than the thickness of the substrate layer.
In a third aspect, the present application provides an electronic component including the composite film provided in the second aspect.
In the embodiment, the wafer with the cleavage structure is used as the substrate, and the property of the cleavage structure is utilized to drive the thin film layer on the substrate layer to be cut, so as to form a smooth and flat splitting surface. The performance of the electronic component prepared by utilizing the characteristic is improved, and the problem that stress is generated inside the wafer by utilizing a traditional cutting method is avoided.
Drawings
Fig. 1 is a schematic flow chart of a composite film cutting method according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram illustrating a dicing of a substrate wafer according to an embodiment of the present disclosure;
FIG. 3 is a schematic side view of a composite film obtained by cutting according to the prior art according to an embodiment of the present disclosure;
FIG. 4 is a schematic side view of a composite film according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a composite film according to an embodiment of the present disclosure.
Detailed Description
To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.
Before describing the method provided by the examples of the present application, the initial composite and load film will be described.
With the development of microelectronic technology, the size requirement of semiconductor components is higher and higher. The initial composite film as a semi-finished product for manufacturing semiconductor components is typically a 3 inch, 4 inch, 6 inch, 8 inch or 12 inch round or quasi-round wafer.
The structure of the composite film is consistent with that of the initial composite film.
And cutting the initial composite film into the composite film in accordance with the expected size, wherein the composite film sequentially comprises a film layer and a substrate layer from top to bottom, and the substrate layer is formed by a substrate wafer. That is, the initial composite film and the composite film are the same. The shape and size of the initial composite film do not conform to the subsequent process size, and the initial composite film in a wafer shape needs to be processed into a composite film in a rectangular sheet shape conforming to the expected size.
It should be noted that the substrate layer and the thin film layer may include an intermediate layer therebetween, and the intermediate layer may be a single-layer or multi-layer structure. This is not limited by the present application.
The film layer is used as a functional layer, and the general material is any one of lithium niobate, lithium tantalate, quartz, gallium arsenide or lithium tetraborate. The thin film layer is low in material hardness, large in brittleness and strong in anisotropy, so that the conditions of brittle damage, subsurface damage and the like of lithium niobate or lithium tantalate are easily caused in the cutting and grinding processes adopted in the prior art, and the cut thin film layer needs to be polished and ground at least five times due to large and uncontrollable damage of the cut surface of the thin film layer after cutting, so that the operation flow and time are increased, and the thin film layer cannot reach the expected size.
The method provided by the application can effectively avoid the problems.
Fig. 1 is a schematic flow chart of a composite film cutting method according to an embodiment of the present disclosure.
Step S101, determining the cleavage direction of the substrate wafer and the vertical direction perpendicular to the cleavage direction according to the cleavage structure of the substrate wafer.
Specifically, the substrate wafer has a natural cleavage structure along a certain crystal direction due to the fact that the substrate wafer is composed of crystal grains, the substrate wafer is broken along the direction (cleavage direction) of the natural cleavage structure under the action of external force, and a cleavage plane is smooth and flat.
For any one substrate wafer, all the cleavage planes are parallel.
Step S102, forming at least two first gaps parallel to the cleavage direction on the substrate wafer according to the expected size of the composite film.
Specifically, the distance between the two first notches is the length of the composite film.
Assuming that the expected size of the composite film is 5mm x 8mm, 5mm is regarded as the length of the composite film, and thus first notches are formed in the substrate wafer in parallel with the cleaving direction, the positions of the first notches from the initial mark being 5mm, 10mm, 15mm, … …, 60mm, 65mm, 70mm, and so on, respectively.
Step S103, applying pressure to the initial composite film along the direction of the first notch to split the initial composite film to form a cleavage cut surface.
The edge damage of the cleavage cutting surface of the thin film layer is less than or equal to 0.5 μm.
Preferably, the edge damage of the cleaved cut surface is less than or equal to 0.3 μm.
In particular, the embodiments of the present application may apply pressure to the initial load membrane in a variety of ways.
The first feasible method is to apply pressure to the initial composite film along the direction of the first notch by using a roller, so that the initial composite film is split to form a cleavage cut surface.
The second feasible method is that any one of two sides of the first notch in the initial composite film is sucked by using a sucking disc, and the other side of the first notch in the initial composite film is pulled along the first notch, so that the initial composite film is split to form a cleavage cutting surface.
The third feasible method is that the pneumatic thrust is utilized to push any one of two sides of the first notch in the initial composite film, so that the initial composite film is split to form a cleavage cutting surface.
It should be noted that the cleavage plane is a structure of the substrate wafer itself, and when pressure is applied along the first notch direction, the surface of the substrate wafer is split into smooth surfaces along the cleavage direction because the first notch direction is the same as the cleavage direction.
And the intermediate layer and the thin film layer are prepared on the substrate wafer by a deposition method because the compactness of the material grown by deposition is low, and the thickness of the substrate layer is greater than or equal to 90 mu m and less than or equal to 150 mu m. And the thickness of the thin film layer is less than 5 μm. Therefore, the intermediate layer and the film layer are separated along with the cracking of the substrate wafer, so that the initial composite film forms a cleavage cut surface on the whole.
The edge damage of the cleaved cutting surface of the thin film layer is less than 0.5 mu m, and the process requirement of further processing is met, so that the cleaved cutting surface does not need to be polished and ground.
Fig. 2 is a schematic diagram illustrating a dicing of a substrate wafer according to an embodiment of the present invention.
As shown in fig. 2, 21 indicates the direction of the first notch, i.e. the direction of the cleavage plane. For any one wafer, the directions of the cleavage cut surfaces are parallel, and therefore, all the surfaces parallel to the cleavage cut surface 21 in fig. 2 are also the cleavage cut surfaces of the wafer.
And step S104, forming at least two second notches parallel to the vertical direction on the cleavage cutting surface according to the standard size.
The distance between any two adjacent second notches is the width of the composite film.
Assuming that the expected size of the composite film is 5mm x 8mm, 8mm is regarded as the width of the composite film, and thus first notches are formed in the substrate wafer in parallel with the cleaving direction, the positions of the first notches from the initial mark being 8mm, 16mm, 24mm, … …, 40mm, 48mm, 56mm, and the like, respectively.
And step S105, cutting the split composite film along the direction of the second notch to form a second cutting surface.
Specifically, pressure is applied along the direction of the second direction notch or pressure is applied to one side of the second direction notch, and the composite film is cracked along the direction of the second direction notch to form a second cutting surface.
As shown in fig. 2, the direction of the second notch is shown at 22, i.e. the second cut surface. As can be seen from fig. 2, the second cut plane is perpendicular to the cleavage cut plane, and the original composite film is cut in the shape and size of the composite film actually required in the actual production process.
Since the second cut surface is not formed using a cleavage structure, the surface of the second cut surface has a certain roughness, and the second cut surface needs to be polished. Specifically, the second cut surface needs to be ground and polished 1 to 3 times.
Fig. 3 is a schematic side view of a composite film obtained by cutting according to the prior art according to an embodiment of the present application. In fig. 3, 31 denotes a thin film layer, and 32 denotes a substrate layer. In the existing cutting technology, the edge damage of the thin film layer 31 is large, and multiple polishing is needed, so that the size of the thin film layer 31 is difficult to achieve the expected effect.
Fig. 4 is a schematic side view of a composite film according to an embodiment of the present disclosure. In fig. 4, 41 denotes a thin film layer, and 42 denotes a backing layer. By adopting the cutting technology provided by the embodiment of the application, the obtained edge damage of the thin film layer 41 is small, and polishing is not needed.
To further illustrate the methods provided herein, the following five examples are further set forth.
Example one
And preparing a lithium niobate thin film layer with the thickness of 1000nm on the silicon substrate layer with the thickness of 100 mu m in a mode of separating ion implantation and bonding.
A first notch is formed in the cleavage direction of the silicon substrate wafer by using a cleavage knife, then pressure is applied by rolling of a roller, the silicon substrate wafer can be naturally cleaved and cracked along the direction of the first notch, and meanwhile, a lithium niobate thin film layer above the substrate layer is driven to be cracked along the cracking direction of the silicon substrate layer, so that a smooth and flat cracking surface is formed. And then continuing to form a second cut surface.
Example two
On a silicon substrate layer with the thickness of 100 mu m, a 1000nm silicon dioxide layer is prepared by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, and a 1000nm lithium niobate thin film layer is prepared on the silicon dioxide layer in a mode of separating ion implantation and bonding.
A first notch is scribed in the cleavage direction of the silicon substrate wafer by using a cleavage knife, then pressure is applied by rolling of a roller, the silicon substrate wafer can be naturally cleaved and cracked along the direction of the first notch, and meanwhile, a silicon dioxide layer and a lithium niobate thin film layer above the substrate are driven to be cracked along the cracking direction of the silicon substrate layer, so that a smooth and flat cracking surface is formed. And then continuing to form a second cut surface.
EXAMPLE III
Depositing a 1000nm polysilicon layer on a silicon substrate layer with the thickness of 80 mu m at low temperature, preparing a 500nm silicon dioxide layer on the 300nm thick part of the polysilicon layer far away from the substrate layer by a thermal oxidation mode, and preparing a 1000nm lithium niobate thin film layer on the silicon dioxide layer by ion implantation and bonding separation modes.
A first notch is scribed in the cleavage direction of the silicon substrate wafer by using a cleavage knife, then one side of the two sides of the first notch is sucked by using a vacuum chuck to drive the cleavage face to crack, the silicon substrate layer is naturally cleaved and cracked along the direction of the first notch, and meanwhile, a polycrystalline silicon layer, a silicon dioxide layer and a lithium niobate thin film layer above the substrate layer are driven to crack along the cracking direction of the silicon substrate layer to form a smooth and flat cracking face. And then continuing to form a second cut surface.
Example four
And preparing a 2-micron lithium tantalite film layer on the gallium arsenide substrate layer with the thickness of 120 microns in a direct bonding and grinding and polishing mode.
A first notch is scribed in the cleavage direction of the gallium arsenide substrate wafer by using a cleavage knife, then one side of the two sides of the first notch is sucked by using a vacuum chuck to drive the cleavage surface to crack, the gallium arsenide substrate layer can be naturally cleaved and cracked along the direction of the first notch, and meanwhile, a lithium tantalate film layer above the substrate layer is driven to crack along the cracking direction of the gallium arsenide substrate layer, so that a smooth and flat cracking surface is formed. And then continuing to form a second cut surface.
EXAMPLE five
On an indium phosphide substrate layer with the thickness of 150 mu m, a silicon dioxide layer with the thickness of 2 mu nm is prepared by a magnetron sputtering method, and a lithium tantalate thin film layer with the thickness of 5 mu m is prepared on the silicon dioxide by a direct bonding and grinding and polishing mode.
Utilize the cleavage sword to draw first breach in the cleavage direction of indium phosphide substrate wafer, then utilize pneumatic thrust to promote one side of first breach both sides, the indium phosphide substrate layer can be along the fracture of first breach orientation natural cleavage, drives the silica layer and the lithium tantalate thin layer of substrate layer top simultaneously and follows the fracture of first breach orientation, forms smooth and flat fracture face. And then continuing to form a second cut surface.
In the embodiment, the wafer with the cleavage structure is used as the substrate, and the property of the cleavage structure is utilized to drive the thin film layer on the substrate layer to be cut, so as to form a smooth and flat splitting surface. The performance of the electronic component prepared by utilizing the characteristic is improved, and the problem that stress is generated inside the wafer by utilizing a traditional cutting method is avoided.
Fig. 5 is a schematic structural diagram of a composite film according to an embodiment of the present disclosure. The composite film includes a film layer 51, an intermediate layer 52, and a substrate layer 53. The composite film provided by the embodiment of the application is prepared by adopting the method.
The composite film sequentially comprises from top to bottom: a thin film layer 51, and a backing layer 53.
The substrate layer 53 is a wafer including a cleavage plane.
The edge damage of the thin film layer 51 is less than or equal to 0.5 μm.
Optionally, the material of the thin film layer 51 is any one of lithium niobate and lithium tantalate; the material of the substrate layer 53 is any one of silicon, gallium nitride, gallium arsenide, indium phosphide, silicon carbide, diamond, and gallium oxide.
Optionally, an intermediate layer 52 is further included between the substrate layer 53 and the thin film layer 51; the intermediate layer 52 is a single layer or a multi-layer structure.
Optionally, the thickness of the thin film layer 51 is less than the thickness of the substrate layer 53.
In the composite film provided by the embodiment, the wafer with the cleavage structure is used as the substrate, and the property of the cleavage structure is utilized to drive the film layer on the substrate layer to be cut, so that a smooth and flat splitting surface is formed. The performance of the electronic component prepared by utilizing the characteristic is improved, and the problem that stress is generated inside the wafer by utilizing a traditional cutting method is avoided.
The embodiment of the application provides an electronic component, and the electronic component adopts any one of the composite films.
In the composite film adopted by the electronic component, the wafer with the cleavage structure is used as the substrate, and the property of the cleavage structure is utilized to drive the thin film layer on the substrate layer to be cut so as to form a smooth and flat splitting surface. The performance of the electronic component prepared by utilizing the characteristic is improved, and the problem that stress is generated inside the wafer by utilizing a traditional cutting method is avoided.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (9)
1. A composite film cutting method comprises the steps that an initial composite film is cut into the composite film which accords with the expected size, the composite film sequentially comprises a film layer and a substrate layer from top to bottom, and the substrate layer is composed of a substrate wafer; the composite film and the initial composite film have the same structure; characterized in that the method comprises:
determining the cleavage direction of the substrate wafer and the vertical direction perpendicular to the cleavage direction according to the cleavage structure of the substrate wafer;
forming at least two first gaps parallel to the cleavage direction on the substrate wafer according to the expected size of the composite film; the distance between any two adjacent first gaps is the length of the composite film;
applying pressure to the initial composite film along the direction of the first notch to split the initial composite film to form a cleavage cut surface; the edge damage of a cleavage cutting surface of the thin film layer is less than or equal to 0.5 mu m;
forming at least two second notches parallel to the vertical direction on the cleavage cutting surface according to the standard size; the distance between any two adjacent second notches is the width of the composite film;
and cutting the split composite film along the direction of the second notch to form a second cut surface.
2. The composite film cutting method according to claim 1, wherein after forming the second cut surface, further comprising:
and polishing the second cutting surface.
3. The method for cutting a composite film according to claim 1, wherein applying pressure to the initial composite film along the direction of the first notch to split the initial composite film to form a cleaved cut surface comprises:
and applying pressure to the initial composite film along the direction of the first notch by using a roller to split the initial composite film to form a cleavage cutting surface.
4. The method for cutting a composite film according to claim 1, wherein applying pressure to the initial composite film along the direction of the first notch to split the initial composite film to form a cleaved cut surface comprises:
sucking any one of two sides of a first notch in the initial composite film by using a sucking disc, and pulling the other side of the first notch in the initial composite film along the first notch to split the initial composite film to form a cleavage cutting surface.
5. A composite film, wherein the composite film is prepared by any one of the methods of claims 1 to 4, and the composite film sequentially comprises, from top to bottom: a thin film layer and a substrate layer;
the substrate layer comprises a cleavage cut face;
the thin film layer is of a single crystal structure;
the edge damage of the thin film layer is less than or equal to 0.5 mu m.
6. The composite film according to claim 5, wherein the material of the film layer is any one of lithium niobate, lithium tantalate, quartz, gallium arsenide, or lithium tetraborate; the substrate layer is made of any one of silicon, gallium nitride, gallium arsenide, indium phosphide, silicon carbide, diamond and gallium oxide.
7. The composite film of claim 5, further comprising an intermediate layer between the substrate layer and the film layer; the intermediate layer is of a single-layer or multi-layer structure.
8. The composite film of claim 5, wherein the film layer has a thickness less than a thickness of the substrate layer.
9. An electronic component, comprising the composite film according to any one of claims 5 to 8.
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|---|---|---|---|---|
| JPH11224865A (en) * | 1997-12-03 | 1999-08-17 | Ngk Insulators Ltd | Cutting method by laser for oxide single-crystal substrate |
| CN1983555B (en) * | 2005-12-14 | 2010-05-19 | 丰田合成株式会社 | Method of making semiconductor element |
| CN108666212A (en) * | 2018-05-02 | 2018-10-16 | 南方科技大学 | A kind of LED chip production method |
| CN110091441A (en) * | 2019-04-29 | 2019-08-06 | 上海理工大学 | Lift semiconductor crystal wafer cleavage device |
| CN111477543A (en) * | 2020-04-23 | 2020-07-31 | 济南晶正电子科技有限公司 | Method for bonding substrate wafer and single crystal piezoelectric wafer and composite single crystal piezoelectric wafer substrate |
-
2021
- 2021-02-04 CN CN202110155076.1A patent/CN112959526A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11224865A (en) * | 1997-12-03 | 1999-08-17 | Ngk Insulators Ltd | Cutting method by laser for oxide single-crystal substrate |
| CN1983555B (en) * | 2005-12-14 | 2010-05-19 | 丰田合成株式会社 | Method of making semiconductor element |
| CN108666212A (en) * | 2018-05-02 | 2018-10-16 | 南方科技大学 | A kind of LED chip production method |
| CN110091441A (en) * | 2019-04-29 | 2019-08-06 | 上海理工大学 | Lift semiconductor crystal wafer cleavage device |
| CN111477543A (en) * | 2020-04-23 | 2020-07-31 | 济南晶正电子科技有限公司 | Method for bonding substrate wafer and single crystal piezoelectric wafer and composite single crystal piezoelectric wafer substrate |
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